US20110291304A1 - Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method - Google Patents
Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method Download PDFInfo
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- US20110291304A1 US20110291304A1 US13/206,408 US201113206408A US2011291304A1 US 20110291304 A1 US20110291304 A1 US 20110291304A1 US 201113206408 A US201113206408 A US 201113206408A US 2011291304 A1 US2011291304 A1 US 2011291304A1
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- 238000004377 microelectronic Methods 0.000 title claims abstract description 22
- 238000000034 method Methods 0.000 title abstract description 27
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 239000003351 stiffener Substances 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 239000000463 material Substances 0.000 claims description 18
- 230000004907 flux Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 2
- 238000010168 coupling process Methods 0.000 abstract description 2
- 238000005859 coupling reaction Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 6
- 238000007639 printing Methods 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/563—Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73253—Bump and layer connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Definitions
- the present invention relates to methods of fabricating microelectronic packages, and especially to methods of fabricating microelectronic packages having thin or no-core substrates.
- package substrates that may be characterized as thin core substrates (that is, substrates having a core with a thickness less than or equal to 400 microns and larger than zero), or no-core substrates (that is, substrates without cores).
- FIGS. 1 a and 1 b are a schematic, perspective views, respectively, of a top and a bottom of an embodiment of an integrated heat spreader (“IHS”) panel including a plurality of IC dies mounted thereon;
- IHS integrated heat spreader
- FIG. 2 a is a schematic, perspective view of the IHS panel of FIGS. 1 a and 1 b in the process of being mounted to a substrate panel;
- FIG. 2 b is a schematic, perspective view of the active surface of substrate panel of FIG. 2 a;
- FIG. 3 is a schematic, perspective view of a first combination including the IHS panel and the substrate panel of FIG. 2 after mounting;
- FIG. 4 is a schematic, perspective view of the first combination of FIG. 3 being supplied with underfill material according to an embodiment to yield a second combination including the IHS panel mounted to the substrate panel, and further including underfill material therebetween;
- FIG. 5 is a schematic, perspective view of the second combination being singulated according to an embodiment
- FIG. 6 a is a schematic, perspective view of a microelectronic package formed according to the fabrication stages shown in FIGS. 1 a - 1 b and 5 ;
- FIG. 6 b is a schematic, a side cross-sectional view through the package of FIG. 6 a ;
- FIG. 7 is a schematic view of an embodiment of a system incorporating a microelectronic package as shown in FIGS. 6 a and 6 b.
- first element disposed on, above, or below a second element may be directly in contact with the second element or it may include one or more intervening elements.
- first element disposed next to or adjacent a second element may be directly in contact with the second element or it may include one or more intervening elements.
- FIGS. 1 a , 1 b , 2 a , 2 b , 3 - 5 , 6 a , 6 b and 7 represent stages in the making of a microelectronic package according to an embodiment
- FIGS. 6 a and 6 b represent a package made according to the method embodiments shown in FIGS. 1 a , 1 b , 2 a , 2 b , and 3 - 5 .
- the figures will be discussed in further detail below.
- a method embodiment includes bonding and thermally coupling a plurality of IC dies 102 to an IHS (integrated heat spreader) panel 104 to yield a die-carrying IHS panel 103 .
- the IHS panel may include a copper slug, or may include any other material adapted to be used as a heat spreader material, as would be within the knowledge of a skilled person.
- the IHS panel 104 may, as shown in the embodiment of FIG. 1 b , be pre-notched to define streets 105 therein, the streets contributing to define individual IHS components 106 therebetween ( FIG. 1 b ).
- Each of the dies 102 may be bonded and thermally coupled to a corresponding one of the IHS components 106 of panel 104 to yield a die-carrying IHS panel 108 as shown.
- the dies 102 may for example be bonded (that is, mechanically fixed to) and thermally coupled (that is, coupled for enhanced thermal conductivity) to the respective ones of the IHS components 106 using a thermal interface material (TIM), as would be within the knowledge of the skilled person.
- the IHS panel 104 of the shown embodiments defines ports 110 extending through a thickness thereof, that is, extending from a die-carrying surface 112 of IHS panel 104 all the way to the opposite, backside surface 114 of IHS panel 104 .
- a method embodiment includes mounting the die-carrying IHS panel 103 onto a substrate panel 116 including a plurality of package substrates 118 .
- the package substrates 118 may include any type of package substrate within the knowledge of a skilled person, such as, for example, one of a BGA substrate, a LGA substrate and a PGA substrate.
- the package substrates 118 include at least one of thin substrates and no-core substrates. Boundaries between the individual package substrates 118 are shown by way of broken lines 120 in FIGS.
- the substrate panel 116 may not necessarily have streets pre-notched therein, it nevertheless includes a plurality of individual package substrates 118 .
- Each of the package substrates 118 of the substrate panel 116 may be defined as encompassing a number of electrical connection pads thereon, such as, for example, surface finish pads 121 of FIG. 2 b , adapted to be mechanically and electrically bonded to a corresponding one of the IC dies 102 on the die-carrying IHS panel 103 , as would be recognized by a skilled person.
- the die-carrying IHS panel 103 may, according to an embodiment, be for example, flip chip mounted onto the substrate panel 116 using a solder reflow process in a well known manner.
- a difference here with a prior art reflow process would be that a plurality of dies 102 would be reflowed and thus mounted onto a panel of corresponding package substrates 118 instead of each die being individually reflowed to an individual package substrate.
- Using a reflow process may include any one of well known techniques, such as, for example, techniques involving use of a thermal compression bonder.
- solder such as, for example, solder paste or solder balls, may be provided onto each of the plurality of package substrates 118 of the substrate panel 116 prior to mounting the die-carrying IHS panel onto the substrate panel 116 .
- the solder may be provided for example by way of printing or by way of ball placement mechanisms, or in any other way as would be recognized by one skilled in the art.
- mounting each of the plurality of dies 102 to a corresponding one of the plurality of package substrates 118 yields a combination 122 including the die-carrying IHS panel mounted 103 to the substrate panel 116 .
- a no-clean flux may be used in a well known manner, or a fluxless process may be used in a well known manner before the die-carrying IHS panel is mounted onto the substrate.
- an embodiment may include a microelectronic package exhibiting no flux residue between the die and the package substrate.
- a method embodiment includes providing an underfill material 124 in a space between the IHS panel 104 and the substrate panel 116 of the combination 122 .
- the IHS panel defines a port, such as ports 110 , extending through a thickness thereof to provide access to the space between the IHS panel and the substrate panel
- the underfill material may be provided through the ports 110 , such as by way of underfill dispensers 126 inserted into corresponding ones of the ports 110 . Capillary action may then draw the underfill material throughout the space between the IHS panel and the substrate panel.
- embodiments are within the scope of embodiments, such as, for example, providing underfill material using resin transfer molding, or any other well known technique.
- Embodiments are further not limited to the use of ports, or to use of only two ports on each panel. Rather, embodiments include within their scope a provision of underfill material in the space between the IHS panel and the substrate panel in any well known manner, and/or through one or more ports, according to application needs. Provision of the underfill material may involve curing the same, as would be recognized by the skilled person.
- a method embodiment includes singulating the combination 122 to yield a plurality of microelectronic packages 128 therefrom.
- the combination 122 further includes the underfill material 124 dispensed in the stage shown in FIG. 4 .
- Singulating may include any one of well known methods for singulating a panel, such as, for example, as shown in FIG. 5 , singulating using a saw 132 . Other methods of singulating are within the purview of embodiments. Where the IHS panel is pre-notched as shown in FIGS.
- singulation may take place along the streets 105 in a well known manner.
- Singulation according to embodiments yields a plurality of microelectronic packages.
- each of the microelectronic packages 100 obtained as explained above in relation to FIGS. 1 a , 1 b , 2 a , 2 b and 3 - 5 may include: an IHS component 130 of the IHS panel 104 , one of the plurality IC dies 102 ( FIG. 6 b ), and one of the plurality of package substrates 118 , said IHS component 130 and said one of the plurality of IC dies 102 being mounted to said one of the plurality of package substrates 118 to form said each of the packages.
- the package 100 also includes the underfill material 124 encompassing the die.
- the IHS component 130 of each package 100 is a flat component without any projections extending toward the package substrate.
- the IHS component 130 of package 100 of FIGS. 1 a , 1 b , 2 a , 2 b , 3 - 5 and 6 a - 6 b is not in the form of a cap including a flat top surface and walls extending to the package substrate to form an IHS cap on the die.
- the IHS component 130 is bonded and thermally coupled to the die with a TIM 134 ( FIG. 6 b ) such that the die 102 is between the IHS component 130 and the package substrate 118 .
- the IHS component 130 and the underfill material 120 are in turn coextensive in their width W and in their length L (FIG. 6 a ) with respect to the package substrate 118 by virtue of having been singulated therewith as shown in FIG. 5 .
- embodiments provide a method of making a microelectronic package using thin or no-core substrates in a cost-effective and reliable manner.
- Method embodiments contemplate the use of an IHS panel stiffener to which the dies may be initially assembled before the die-carrying IHS panel is then mounted onto a substrate panel. The combination is only thereafter singulated to yield individual microelectronic packages.
- embodiments envisage the utilization of two or more dies attached to a heat spreader as a stiffener at the very start of the package assembly process, and the singulation of the combination only at the end of the process line.
- embodiments enable the elimination of a stiffener or additional complex die or substrate carrier handling media to keep the substrate panel flat.
- Embodiments further advantageously enable improved and more expedient solder paste printing onto the package substrate and/or the die as a result of an automatic registration of a plurality of package substrates of the substrate panel and/or of a plurality of dies of the die-carrying IHS panel with paste printing material.
- the use of a substrate panel means that all individual package substrates are aligned with the paste printing equipment, leading to improved precision from pad location to pad location on each individual package substrates.
- the above advantage enables the use of smaller components since the screen for screen printing may be more accurately located on a substrate panel, in this way avoiding unit to unit tolerances within the carrier.
- the ability of reduce packing costs for future generation microelectronic packages is a primary focus of the art. Substrates currently represent about 75% of the package cost.
- Embodiments enable a low cost assembly solution for thin or no-core substrates, which solution is important for meeting projected cost targets.
- the novel method of attaching two or more dice to a IHS panel or heat slug enables reflowing the C4 joints of the dies to the package substrate using reflow and underfilling for a plurality of dies in one mold shot.
- the ability to advantageously increase the number of dice assembled and underfilled in one processing stage has a significant ability to reduce processing costs.
- the electronic assembly 1000 may include a microelectronic package, such as package 100 of FIGS. 6 a and 6 b . Assembly 1000 may further include a microprocessor. In an alternate embodiment, the electronic assembly 1000 may include an application specific IC (ASIC). Integrated circuits found in chipsets (e.g., graphics, sound, and control chipsets) may also be packaged in accordance with embodiments of this invention.
- ASIC application specific IC
- the system 900 may also include a main memory 1002 , a graphics processor 1004 , a mass storage device 1006 , and/or an input/output module 1008 coupled to each other by way of a bus 1010 , as shown.
- the memory 1002 include but are not limited to static random access memory (SRAM) and dynamic random access memory (DRAM).
- SRAM static random access memory
- DRAM dynamic random access memory
- the mass storage device 1006 include but are not limited to a hard disk drive, a compact disk drive (CD), a digital versatile disk drive (DVD), and so forth.
- Examples of the input/output module 1008 include but are not limited to a keyboard, cursor control arrangements, a display, a network interface, and so forth.
- bus 1010 examples include but are not limited to a peripheral control interface (PCI) bus, and Industry Standard Architecture (ISA) bus, and so forth.
- the system 90 may be a wireless mobile phone, a personal digital assistant, a pocket PC, a tablet PC, a notebook PC, a desktop computer, a set-top box, a media-center PC, a DVD player, and a server.
- PCI peripheral control interface
- ISA Industry Standard Architecture
- the system 90 may be a wireless mobile phone, a personal digital assistant, a pocket PC, a tablet PC, a notebook PC, a desktop computer, a set-top box, a media-center PC, a DVD player, and a server.
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
A method of making a microelectronic package, and a microelectronic package made according to the method. The method includes: bonding and thermally coupling a plurality of IC dies to an IHS panel to yield a die-carrying IHS panel; mounting the die-carrying IHS panel onto a substrate panel including a plurality of package substrates to yield a combination including the die-carrying IHS panel mounted to the substrate panel; and singulating the combination to yield a plurality of microelectronic packages, each of the packages including: an IHS component of the IHS panel, one of the plurality IC dies bonded and thermally coupled to said IHS component, and one of the plurality of package substrates, said IHS component and said one of the plurality of IC dies being mounted to said one of the plurality of package substrates to form said each of the packages.
Description
- This is a Divisional application of Ser. No. 11/864,279 filed Sep. 28, 2007, which is presently pending.
- The present invention relates to methods of fabricating microelectronic packages, and especially to methods of fabricating microelectronic packages having thin or no-core substrates.
- As microelectronic components shrink in size, a trend has emerged to provide package substrates that may be characterized as thin core substrates (that is, substrates having a core with a thickness less than or equal to 400 microns and larger than zero), or no-core substrates (that is, substrates without cores).
- Disadvantageously, with a thin or no-core substrate, however, errors may occur during the package manufacturing process, such as, for example, during flip chip bonding where substrate flatness and rigidity are required. To address the above issue, the prior art sometimes provides substrates that may have a thickness of at least several tens of microns or more. However, the above measure disadvantageously detracts from further package size minimization.
- The prior art fails to provide method or structures that address the above disadvantages.
-
FIGS. 1 a and 1 b are a schematic, perspective views, respectively, of a top and a bottom of an embodiment of an integrated heat spreader (“IHS”) panel including a plurality of IC dies mounted thereon; -
FIG. 2 a is a schematic, perspective view of the IHS panel ofFIGS. 1 a and 1 b in the process of being mounted to a substrate panel; -
FIG. 2 b is a schematic, perspective view of the active surface of substrate panel ofFIG. 2 a; -
FIG. 3 is a schematic, perspective view of a first combination including the IHS panel and the substrate panel ofFIG. 2 after mounting; -
FIG. 4 is a schematic, perspective view of the first combination ofFIG. 3 being supplied with underfill material according to an embodiment to yield a second combination including the IHS panel mounted to the substrate panel, and further including underfill material therebetween; -
FIG. 5 is a schematic, perspective view of the second combination being singulated according to an embodiment; -
FIG. 6 a is a schematic, perspective view of a microelectronic package formed according to the fabrication stages shown inFIGS. 1 a-1 b and 5; -
FIG. 6 b is a schematic, a side cross-sectional view through the package ofFIG. 6 a; and -
FIG. 7 is a schematic view of an embodiment of a system incorporating a microelectronic package as shown inFIGS. 6 a and 6 b. - For simplicity and clarity of illustration, elements in the drawings have not necessarily been drawn to scale. For example, the dimensions of some of the elements may be exaggerated relative to other elements for clarity. Where considered appropriate, reference numerals have been repeated among the drawings to indicate corresponding or analogous elements.
- In the following detailed description, a method of making a microelectronic package, and a microelectronic package made according to the method are disclosed. Reference is made to the accompanying drawings within which are shown, by way of illustration, specific embodiments by which the present invention may be practiced. It is to be understood that other embodiments may exist and that other structural changes may be made without departing from the scope and spirit of the present invention.
- The terms on, above, below, and adjacent as used herein refer to the position of one element relative to other elements. As such, a first element disposed on, above, or below a second element may be directly in contact with the second element or it may include one or more intervening elements. In addition, a first element disposed next to or adjacent a second element may be directly in contact with the second element or it may include one or more intervening elements.
- Aspects of this and other embodiments will be discussed herein with respect to
FIGS. 1 a, 1 b, 2 a, 2 b, 3-5, 6 a, 6 b and 7 below. The figures, however, should not be taken to be limiting, as it is intended for the purpose of explanation and understanding.FIGS. 1 a, 1 b, 2 a, 2 b and 3-5 represent stages in the making of a microelectronic package according to an embodiment, whileFIGS. 6 a and 6 b represent a package made according to the method embodiments shown inFIGS. 1 a, 1 b, 2 a, 2 b, and 3-5. The figures will be discussed in further detail below. - Referring first to
FIGS. 1 a and 1 b by way of example, a method embodiment includes bonding and thermally coupling a plurality of IC dies 102 to an IHS (integrated heat spreader)panel 104 to yield a die-carryingIHS panel 103. According to embodiments, the IHS panel may include a copper slug, or may include any other material adapted to be used as a heat spreader material, as would be within the knowledge of a skilled person. The IHSpanel 104 may, as shown in the embodiment ofFIG. 1 b, be pre-notched to define streets 105 therein, the streets contributing to defineindividual IHS components 106 therebetween (FIG. 1 b). Each of thedies 102 may be bonded and thermally coupled to a corresponding one of theIHS components 106 ofpanel 104 to yield a die-carrying IHS panel 108 as shown. Thedies 102 may for example be bonded (that is, mechanically fixed to) and thermally coupled (that is, coupled for enhanced thermal conductivity) to the respective ones of theIHS components 106 using a thermal interface material (TIM), as would be within the knowledge of the skilled person. TheIHS panel 104 of the shown embodiments definesports 110 extending through a thickness thereof, that is, extending from a die-carryingsurface 112 ofIHS panel 104 all the way to the opposite,backside surface 114 ofIHS panel 104. - Referring next to
FIGS. 2 a, 2 b and 3 by way of example, a method embodiment includes mounting the die-carryingIHS panel 103 onto asubstrate panel 116 including a plurality ofpackage substrates 118. Thepackage substrates 118 may include any type of package substrate within the knowledge of a skilled person, such as, for example, one of a BGA substrate, a LGA substrate and a PGA substrate. According to one embodiment, thepackage substrates 118 include at least one of thin substrates and no-core substrates. Boundaries between theindividual package substrates 118 are shown by way ofbroken lines 120 inFIGS. 2 a and 2 b to suggest that, although thesubstrate panel 116 may not necessarily have streets pre-notched therein, it nevertheless includes a plurality ofindividual package substrates 118. Each of thepackage substrates 118 of thesubstrate panel 116 may be defined as encompassing a number of electrical connection pads thereon, such as, for example,surface finish pads 121 ofFIG. 2 b, adapted to be mechanically and electrically bonded to a corresponding one of the IC dies 102 on the die-carryingIHS panel 103, as would be recognized by a skilled person. The die-carryingIHS panel 103 may, according to an embodiment, be for example, flip chip mounted onto thesubstrate panel 116 using a solder reflow process in a well known manner. A difference here with a prior art reflow process would be that a plurality ofdies 102 would be reflowed and thus mounted onto a panel ofcorresponding package substrates 118 instead of each die being individually reflowed to an individual package substrate. Using a reflow process may include any one of well known techniques, such as, for example, techniques involving use of a thermal compression bonder. In order to effect reflow, solder, such as, for example, solder paste or solder balls, may be provided onto each of the plurality ofpackage substrates 118 of thesubstrate panel 116 prior to mounting the die-carrying IHS panel onto thesubstrate panel 116. The solder may be provided for example by way of printing or by way of ball placement mechanisms, or in any other way as would be recognized by one skilled in the art. As seen inFIG. 3 by way of example, according to a method embodiment, mounting each of the plurality ofdies 102 to a corresponding one of the plurality ofpackage substrates 118 yields acombination 122 including the die-carrying IHS panel mounted 103 to thesubstrate panel 116. Preferably, according to embodiments, for mounting the die-carrying IHS panel onto the substrate, either a no-clean flux may be used in a well known manner, or a fluxless process may be used in a well known manner before the die-carrying IHS panel is mounted onto the substrate. A reason for the above is that, given the panel structure of the die-carrying IHS panel and of the substrate panel, it would be preferable not to have to clean the individual substrates on the panel prior to mounting the dies thereon, as doing so may prove structurally difficult. As a result, an embodiment may include a microelectronic package exhibiting no flux residue between the die and the package substrate. - Referring now to
FIG. 4 by way of example, a method embodiment includes providing anunderfill material 124 in a space between theIHS panel 104 and thesubstrate panel 116 of thecombination 122. Where, as in the case of the shown embodiment, the IHS panel defines a port, such asports 110, extending through a thickness thereof to provide access to the space between the IHS panel and the substrate panel, the underfill material may be provided through theports 110, such as by way ofunderfill dispensers 126 inserted into corresponding ones of theports 110. Capillary action may then draw the underfill material throughout the space between the IHS panel and the substrate panel. Other manners of providing underfill material between the IHS panel and the substrate panel are within the scope of embodiments, such as, for example, providing underfill material using resin transfer molding, or any other well known technique. Embodiments are further not limited to the use of ports, or to use of only two ports on each panel. Rather, embodiments include within their scope a provision of underfill material in the space between the IHS panel and the substrate panel in any well known manner, and/or through one or more ports, according to application needs. Provision of the underfill material may involve curing the same, as would be recognized by the skilled person. - Referring next to
FIG. 5 by way of example, a method embodiment includes singulating thecombination 122 to yield a plurality of microelectronic packages 128 therefrom. In the embodiment ofFIG. 5 , thecombination 122 further includes theunderfill material 124 dispensed in the stage shown inFIG. 4 . Singulating may include any one of well known methods for singulating a panel, such as, for example, as shown inFIG. 5 , singulating using asaw 132. Other methods of singulating are within the purview of embodiments. Where the IHS panel is pre-notched as shown inFIGS. 1 a, 1 b, 2 a, 2 b and 3-5 to define streets 105 therein, singulation may take place along the streets 105 in a well known manner. Singulation according to embodiments yields a plurality of microelectronic packages. - Referring next to
FIGS. 6 a and 6 b, each of themicroelectronic packages 100 obtained as explained above in relation toFIGS. 1 a, 1 b, 2 a, 2 b and 3-5 may include: anIHS component 130 of theIHS panel 104, one of the plurality IC dies 102 (FIG. 6 b), and one of the plurality ofpackage substrates 118, saidIHS component 130 and said one of the plurality of IC dies 102 being mounted to said one of the plurality ofpackage substrates 118 to form said each of the packages. In the shown embodiment ofFIGS. 6 a and 6 b, thepackage 100 also includes theunderfill material 124 encompassing the die. In some embodiments, as shown for example in the embodiments depicted inFIGS. 1 a, 1 b, 2 a, 2 b, 3-5 and 6 a-6 b, theIHS component 130 of eachpackage 100 is a flat component without any projections extending toward the package substrate. In other words, theIHS component 130 ofpackage 100 ofFIGS. 1 a, 1 b, 2 a, 2 b, 3-5 and 6 a-6 b is not in the form of a cap including a flat top surface and walls extending to the package substrate to form an IHS cap on the die. Referring more particularly to the embodiment of thepackage 100 ofFIGS. 6 a and 6 b, theIHS component 130 is bonded and thermally coupled to the die with a TIM 134 (FIG. 6 b) such that thedie 102 is between theIHS component 130 and thepackage substrate 118. TheIHS component 130 and theunderfill material 120 are in turn coextensive in their width W and in their length L (FIG. 6 a) with respect to thepackage substrate 118 by virtue of having been singulated therewith as shown inFIG. 5 . - Advantageously, embodiments provide a method of making a microelectronic package using thin or no-core substrates in a cost-effective and reliable manner. Method embodiments contemplate the use of an IHS panel stiffener to which the dies may be initially assembled before the die-carrying IHS panel is then mounted onto a substrate panel. The combination is only thereafter singulated to yield individual microelectronic packages. Thus, embodiments envisage the utilization of two or more dies attached to a heat spreader as a stiffener at the very start of the package assembly process, and the singulation of the combination only at the end of the process line. Advantageously, embodiments enable the elimination of a stiffener or additional complex die or substrate carrier handling media to keep the substrate panel flat. Embodiments further advantageously enable improved and more expedient solder paste printing onto the package substrate and/or the die as a result of an automatic registration of a plurality of package substrates of the substrate panel and/or of a plurality of dies of the die-carrying IHS panel with paste printing material. The use of a substrate panel means that all individual package substrates are aligned with the paste printing equipment, leading to improved precision from pad location to pad location on each individual package substrates. The above advantage enables the use of smaller components since the screen for screen printing may be more accurately located on a substrate panel, in this way avoiding unit to unit tolerances within the carrier. The ability of reduce packing costs for future generation microelectronic packages is a primary focus of the art. Substrates currently represent about 75% of the package cost. Embodiments enable a low cost assembly solution for thin or no-core substrates, which solution is important for meeting projected cost targets. The novel method of attaching two or more dice to a IHS panel or heat slug enables reflowing the C4 joints of the dies to the package substrate using reflow and underfilling for a plurality of dies in one mold shot. The ability to advantageously increase the number of dice assembled and underfilled in one processing stage has a significant ability to reduce processing costs.
- Referring to
FIG. 7 , there is illustrated one of manypossible systems 900 in which embodiments of the present invention may be used. In one embodiment, theelectronic assembly 1000 may include a microelectronic package, such aspackage 100 ofFIGS. 6 a and 6 b.Assembly 1000 may further include a microprocessor. In an alternate embodiment, theelectronic assembly 1000 may include an application specific IC (ASIC). Integrated circuits found in chipsets (e.g., graphics, sound, and control chipsets) may also be packaged in accordance with embodiments of this invention. - For the embodiment depicted by
FIG. 7 , thesystem 900 may also include amain memory 1002, agraphics processor 1004, amass storage device 1006, and/or an input/output module 1008 coupled to each other by way of abus 1010, as shown. Examples of thememory 1002 include but are not limited to static random access memory (SRAM) and dynamic random access memory (DRAM). Examples of themass storage device 1006 include but are not limited to a hard disk drive, a compact disk drive (CD), a digital versatile disk drive (DVD), and so forth. Examples of the input/output module 1008 include but are not limited to a keyboard, cursor control arrangements, a display, a network interface, and so forth. Examples of thebus 1010 include but are not limited to a peripheral control interface (PCI) bus, and Industry Standard Architecture (ISA) bus, and so forth. In various embodiments, the system 90 may be a wireless mobile phone, a personal digital assistant, a pocket PC, a tablet PC, a notebook PC, a desktop computer, a set-top box, a media-center PC, a DVD player, and a server. - The various embodiments described above have been presented by way of example and not by way of limitation. Having thus described in detail embodiments of the present invention, it is understood that the invention defined by the appended claims is not to be limited by particular details set forth in the above description, as many variations thereof are possible without departing from the spirit or scope thereof.
Claims (4)
1. A microelectronic package comprising:
a package substrate;
an IC die mounted to the substrate;
an IHS bonded and thermally coupled to the die such that the die is between the substrate and the IHS, the IHS being coextensive in its width and in its length with respect to the package substrate.
2. The package of claim 1 , further including an underfill material disposed between the package substrate and the IHS, the underfill material being coextensive in its width and in its length with respect to the IHS and to the package substrate.
3. The package of claim 1 , wherein the package does not include any residual flux between the IHS and the package substrate.
4. The package of claim 1 , the IHS is a flat component without any projections extending toward the package substrate.
Priority Applications (1)
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US13/206,408 US20110291304A1 (en) | 2007-09-28 | 2011-08-09 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
Applications Claiming Priority (2)
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US11/864,279 US8067256B2 (en) | 2007-09-28 | 2007-09-28 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
US13/206,408 US20110291304A1 (en) | 2007-09-28 | 2011-08-09 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
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US11/864,279 Division US8067256B2 (en) | 2007-09-28 | 2007-09-28 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
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US20110291304A1 true US20110291304A1 (en) | 2011-12-01 |
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US11/864,279 Expired - Fee Related US8067256B2 (en) | 2007-09-28 | 2007-09-28 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
US13/206,408 Abandoned US20110291304A1 (en) | 2007-09-28 | 2011-08-09 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
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US11/864,279 Expired - Fee Related US8067256B2 (en) | 2007-09-28 | 2007-09-28 | Method of making microelectronic package using integrated heat spreader stiffener panel and microelectronic package formed according to the method |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007022338B4 (en) * | 2007-07-26 | 2013-12-05 | Semikron Elektronik Gmbh & Co. Kg | Manufacturing method for a power semiconductor device with metal contact layer |
US8390112B2 (en) | 2008-09-30 | 2013-03-05 | Intel Corporation | Underfill process and materials for singulated heat spreader stiffener for thin core panel processing |
JP2014179495A (en) * | 2013-03-15 | 2014-09-25 | Disco Abrasive Syst Ltd | Method for processing wafer |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688716A (en) * | 1994-07-07 | 1997-11-18 | Tessera, Inc. | Fan-out semiconductor chip assembly |
US20040042179A1 (en) * | 2002-08-27 | 2004-03-04 | Murphy Patrick Kevin | PCB heatsink |
US20050151554A1 (en) * | 2004-01-13 | 2005-07-14 | Cookson Electronics, Inc. | Cooling devices and methods of using them |
US20060091530A1 (en) * | 2004-03-11 | 2006-05-04 | Advanced Semiconductor Engineering, Inc. | Multi-package module with heat spreader |
US20070069370A1 (en) * | 2005-09-28 | 2007-03-29 | Nec Electronics Corporation | Semiconductor device |
US20070109749A1 (en) * | 2005-04-28 | 2007-05-17 | Stats Chippac Ltd. | Wafer scale heat slug system |
US20070131737A1 (en) * | 2005-12-08 | 2007-06-14 | Intel Corporation | Solder deposition and thermal processing of thin-die thermal interface material |
US20070228109A1 (en) * | 2004-05-04 | 2007-10-04 | Smith Ronald W | Electronic Package Formed Using Low-Temperature Active Solder Including Indium, Bismuth, and/or Cadmium |
US20070273019A1 (en) * | 2006-04-17 | 2007-11-29 | Siliconware Precision Industries Co., Ltd. | Semiconductor package, chip carrier structure thereof, and method for fabricating the chip carrier |
US20080061451A1 (en) * | 2006-09-11 | 2008-03-13 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and fabrication method thereof |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6232152B1 (en) * | 1994-05-19 | 2001-05-15 | Tessera, Inc. | Method of manufacturing a plurality of semiconductor packages and the resulting semiconductor package structures |
US6131795A (en) * | 1997-11-10 | 2000-10-17 | Matsushita Electric Industrial Co., Ltd. | Thermal compression bonding method of electronic part with solder bump |
JP3514101B2 (en) * | 1998-01-28 | 2004-03-31 | セイコーエプソン株式会社 | Semiconductor device, method of manufacturing the same, and electronic equipment |
US6266197B1 (en) * | 1999-12-08 | 2001-07-24 | Amkor Technology, Inc. | Molded window array for image sensor packages |
JP3467454B2 (en) * | 2000-06-05 | 2003-11-17 | Necエレクトロニクス株式会社 | Method for manufacturing semiconductor device |
US7015072B2 (en) * | 2001-07-11 | 2006-03-21 | Asat Limited | Method of manufacturing an enhanced thermal dissipation integrated circuit package |
US6734552B2 (en) * | 2001-07-11 | 2004-05-11 | Asat Limited | Enhanced thermal dissipation integrated circuit package |
US6458626B1 (en) * | 2001-08-03 | 2002-10-01 | Siliconware Precision Industries Co., Ltd. | Fabricating method for semiconductor package |
US6979894B1 (en) * | 2001-09-27 | 2005-12-27 | Marvell International Ltd. | Integrated chip package having intermediate substrate |
JP3888439B2 (en) * | 2002-02-25 | 2007-03-07 | セイコーエプソン株式会社 | Manufacturing method of semiconductor device |
JP2003249607A (en) * | 2002-02-26 | 2003-09-05 | Seiko Epson Corp | Semiconductor device and its manufacturing method, circuit board, and electronic equipment |
US7776720B2 (en) * | 2002-04-19 | 2010-08-17 | Electro Scientific Industries, Inc. | Program-controlled dicing of a substrate using a pulsed laser |
US6848610B2 (en) | 2003-03-25 | 2005-02-01 | Intel Corporation | Approaches for fluxless soldering |
US7179720B2 (en) * | 2003-12-04 | 2007-02-20 | Intel Corporation | Pre-fabrication scribing |
US20050161806A1 (en) * | 2004-01-22 | 2005-07-28 | Divakar Mysore P. | Area array packages with overmolded pin-fin heat sinks |
US7074653B2 (en) * | 2004-08-23 | 2006-07-11 | Texas Instruments Incorporated | Heatsink apparatus and thermally-conductive intermediate material for dissipating heat in semiconductor packages |
TWI246760B (en) * | 2004-12-22 | 2006-01-01 | Siliconware Precision Industries Co Ltd | Heat dissipating semiconductor package and fabrication method thereof |
TWI255536B (en) * | 2005-02-02 | 2006-05-21 | Siliconware Precision Industries Co Ltd | Chip-stacked semiconductor package and fabrication method thereof |
TW200636954A (en) * | 2005-04-15 | 2006-10-16 | Siliconware Precision Industries Co Ltd | Thermally enhanced semiconductor package and fabrication method thereof |
JP4845447B2 (en) * | 2005-07-29 | 2011-12-28 | トヨタ自動車株式会社 | Soldering apparatus and method for manufacturing soldered apparatus |
JP2008130706A (en) * | 2006-11-20 | 2008-06-05 | Sony Corp | Method of manufacturing semiconductor device |
DE102007007142B4 (en) * | 2007-02-09 | 2008-11-13 | Infineon Technologies Ag | Benefits, semiconductor device and method for their production |
US7759777B2 (en) * | 2007-04-16 | 2010-07-20 | Infineon Technologies Ag | Semiconductor module |
US8643172B2 (en) * | 2007-06-08 | 2014-02-04 | Freescale Semiconductor, Inc. | Heat spreader for center gate molding |
US7998791B2 (en) * | 2008-02-01 | 2011-08-16 | National Semiconductor Corporation | Panel level methods and systems for packaging integrated circuits with integrated heat sinks |
JP4539773B2 (en) * | 2008-03-07 | 2010-09-08 | 株式会社デンソー | Semiconductor device and manufacturing method thereof |
US8227908B2 (en) * | 2008-07-07 | 2012-07-24 | Infineon Technologies Ag | Electronic device having contact elements with a specified cross section and manufacturing thereof |
US9142480B2 (en) * | 2008-08-15 | 2015-09-22 | Intel Corporation | Microelectronic package with high temperature thermal interface material |
US20100052156A1 (en) * | 2008-08-27 | 2010-03-04 | Advanced Semiconductor Engineering, Inc. | Chip scale package structure and fabrication method thereof |
US8390112B2 (en) * | 2008-09-30 | 2013-03-05 | Intel Corporation | Underfill process and materials for singulated heat spreader stiffener for thin core panel processing |
-
2007
- 2007-09-28 US US11/864,279 patent/US8067256B2/en not_active Expired - Fee Related
-
2011
- 2011-08-09 US US13/206,408 patent/US20110291304A1/en not_active Abandoned
Patent Citations (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5688716A (en) * | 1994-07-07 | 1997-11-18 | Tessera, Inc. | Fan-out semiconductor chip assembly |
US20040042179A1 (en) * | 2002-08-27 | 2004-03-04 | Murphy Patrick Kevin | PCB heatsink |
US20050151554A1 (en) * | 2004-01-13 | 2005-07-14 | Cookson Electronics, Inc. | Cooling devices and methods of using them |
US20060091530A1 (en) * | 2004-03-11 | 2006-05-04 | Advanced Semiconductor Engineering, Inc. | Multi-package module with heat spreader |
US20070228109A1 (en) * | 2004-05-04 | 2007-10-04 | Smith Ronald W | Electronic Package Formed Using Low-Temperature Active Solder Including Indium, Bismuth, and/or Cadmium |
US20070109749A1 (en) * | 2005-04-28 | 2007-05-17 | Stats Chippac Ltd. | Wafer scale heat slug system |
US7975377B2 (en) * | 2005-04-28 | 2011-07-12 | Stats Chippac Ltd. | Wafer scale heat slug system |
US7649253B2 (en) * | 2005-09-28 | 2010-01-19 | Nec Electronics Corporation | Semiconductor device |
US20070069370A1 (en) * | 2005-09-28 | 2007-03-29 | Nec Electronics Corporation | Semiconductor device |
US20070131737A1 (en) * | 2005-12-08 | 2007-06-14 | Intel Corporation | Solder deposition and thermal processing of thin-die thermal interface material |
US8733620B2 (en) * | 2005-12-08 | 2014-05-27 | Intel Corporation | Solder deposition and thermal processing of thin-die thermal interface material |
US20070273019A1 (en) * | 2006-04-17 | 2007-11-29 | Siliconware Precision Industries Co., Ltd. | Semiconductor package, chip carrier structure thereof, and method for fabricating the chip carrier |
US20080061451A1 (en) * | 2006-09-11 | 2008-03-13 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and fabrication method thereof |
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US20090085195A1 (en) | 2009-04-02 |
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