+

US20080296672A1 - Transistor device and method for manufacturing the same - Google Patents

Transistor device and method for manufacturing the same Download PDF

Info

Publication number
US20080296672A1
US20080296672A1 US12/192,224 US19222408A US2008296672A1 US 20080296672 A1 US20080296672 A1 US 20080296672A1 US 19222408 A US19222408 A US 19222408A US 2008296672 A1 US2008296672 A1 US 2008296672A1
Authority
US
United States
Prior art keywords
gate
recess
insulation layer
semiconductor substrate
based oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US12/192,224
Inventor
Jeong-Ho Park
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/616,804 external-priority patent/US7497749B2/en
Application filed by Individual filed Critical Individual
Priority to US12/192,224 priority Critical patent/US20080296672A1/en
Publication of US20080296672A1 publication Critical patent/US20080296672A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28052—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a silicide layer formed by the silicidation reaction of silicon with a metal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0225—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate using an initial gate mask complementary to the prospective gate location, e.g. using dummy source and drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
    • H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
    • H10D30/0229—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET forming drain regions and lightly-doped drain [LDD] simultaneously, e.g. using implantation through a T-shaped mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/015—Manufacture or treatment removing at least parts of gate spacers, e.g. disposable spacers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/025—Manufacture or treatment forming recessed gates, e.g. by using local oxidation
    • H10D64/027—Manufacture or treatment forming recessed gates, e.g. by using local oxidation by etching at gate locations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes

Definitions

  • a structure of a gate may soar relatively high over a silicon substrate. This may create problems in defining the length of the gate when the devices are scaled down. Also, when lightly doped drain ion implants and source and drain ion implants are formed, masking steps are required. Thus the cost for fabricating the devices is increased.
  • Embodiments relate to semiconductor device, and more particularly, to a method for fabricating a transistor that may overcome a short channel effect(SCE).
  • SCE short channel effect
  • embodiments are directed to a transistor device and a method for manufacturing the same that substantially obviates one or more problems due to limitations and disadvantages of the related art.
  • Embodiments relate to a transistor device and a method for manufacturing the same, which effectively may reduce size of a semiconductor device.
  • Embodiments relate to a method for fabricating a transistor by forming a first insulation layer and a second insulation layer over a semiconductor substrate; selectively etching the first and second insulation layers and semiconductor substrate to form a recess; depositing a gate insulation layer and a gate conductor layer; planarizing the gate insulation layer and the gate conductor layer to form a gate structure filling the recess; removing the second insulation layer; forming a spacer over a side wall of the gate; implanting ions into the semiconductor substrate near the spacer to form source and drain regions; wet etching the second insulation layer and the gate insulation layer to expose an upper side wall of the gate and upper portions of the source and drain regions; and forming a salicide layer on the exposed surface of the gate and over the source and drain regions.
  • the planarizing may be carried out by chemical mechanical polishing (CMP) of the gate conductor using the second insulation layer as a polishing stop layer.
  • CMP chemical mechanical polishing
  • the LDD and the source and drain ion implantation profile may be formed by ion implantation using a mask once in the source and drain regions.
  • the gate conductor may include polysilicon, and the gate insulation layer may include nitride-based oxide, hafnium-based oxide, tantalum-based oxide, or titanium-based oxide.
  • the recess may be etched to a depth of 500 ⁇ to 2000 ⁇ .
  • the wet etching of the second insulation layer leaves a portion of the second insulation layer which is over the source and drain regions, adjacent the gate insulation layer and below the spacer.
  • the spacer entirely covers and extends beyond the top surface of the second insulation layer.
  • Embodiments relate to a transistor device including a recess in a surface of semiconductor substrate; a gate insulation layer formed over an inner side of the recess; a gate conductor filling the recess in which the gate insulation layer is formed; and source and drain regions located over the substrate adjacent the recess.
  • An upper portion of the gate conductor projects above the surface of the semiconductor substrate.
  • a spacer may be formed over the side wall of a gate insulation portion that is projected above the surface of semiconductor substrate.
  • a salicide layer may be formed over a upper portion of the gate and over the source and drain regions.
  • Embodiments relate to a transistor device and a method for manufacturing the same, which effectively may reduce size of a semiconductor device.
  • FIGS. 1 through 7 are sectional views illustrating a transistor device and a method for fabricating the same according to embodiments.
  • first insulation layer 3 and a second insulation layer 5 are deposited over a semiconductor substrate 1 .
  • a first photoresist mask layer 100 is formed over the insulating layers for etching the first insulation layer 3 and the second insulation layer 5 .
  • First insulation layer 3 may be composed of silicon oxide while the second insulation layer 5 may be composed of silicon nitride.
  • the first and the second insulation layer 3 and 5 are selectively etched using mask 100 to create patterns 3 ′ and 5 ′, which collectively constitute etching mask 6 .
  • a dry etching process using mask 6 forms recess 2 in the semiconductor substrate 1 .
  • the recess 2 may be etched to a depth of approximately 500 ⁇ to 2000 ⁇ .
  • a gate insulation layer 7 and a gate conductor layer are deposited.
  • a gate 9 and the gate insulation layer 7 are planarized using a chemical mechanical polishing (CMP) method using the pattern of the second insulation layer 5 ′ as a stop layer. Therefore, gate 9 , which fills recess 2 , is approximately 500 ⁇ to 2000 ⁇ thick.
  • the gate 9 may include polysilicon and the gate insulation layer may include a nitride-based oxide, hafnium-based oxide, tantalum-based oxide, or titanium-based oxide.
  • the pattern of the insulation layer 5 ′ has been completely removed using, for example, a wet etching method using phosphoric acid solution.
  • spacer 11 is formed by using, for example, a front etching method.
  • the spacer 11 may also be formed by an isotropic etching method.
  • LDD and high density source and drain regions 13 ′ are formed by implanting ions.
  • the ion implantation process is performed once at the LDD and source and drain regions 13 ′ to form a profile of the LDD and source/drain regions 13 ′.
  • the ion implant profile after annealing is shown.
  • a gate insulation layer 7 ′ and a second pattern 3 ′′ of the first insulation layer are formed by wet etching.
  • the second pattern 3 ′′ of the first insulation layer forms a recessed filler over the gate insulation layer 7 ′ between the spacer 11 and LDD region.
  • Gate insulation 7 ′ is recessed from the top plane of the gate and spacers 11 , to expose an upper side wall of the gate 9 .
  • a salicide process is performed on gate 9 , and source and drain regions 13 to form salicide layer 15 .
  • the salicide layer 15 is formed by heat treatment between 700 to 1000 ° C., after depositing one of, for example, cobalt, nickel, and Ti over the whole surface.
  • embodiments relate to a method for fabricating a semiconductor transistor.
  • a new scheme facilitating a scaling down of the size of the transistors, is proposed.
  • the gate resistance may be reduced without increasing the area used on the surface of the substrate.
  • Lateral diffusion of the ion implant source may be more easily controlled to reduce the short channel effect. It is therefore possible to implement a shallow well ion implantation process at a smaller device scale, with smaller transistor features.

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

A transistor device includes a recess in a surface of semiconductor substrate, a gate insulation layer formed over an inner side of the recess, a gate conductor filling the recess in which the gate insulation layer is formed, and source and drain regions located over the substrate adjacent the recess. Among the advantages: the gate structure lowers overall gate resistance and reduces the short channel effect.

Description

  • The present application claims priority under 35 U.S.C. 119 and 35 U.S.C. 365 to Korean Patent Application No. 10-2005-0133428 (filed on Dec. 29, 2005), which is hereby incorporated by reference in its entirety.
    • BACKGROUND
  • When a transistor of a semiconductor device is formed, a structure of a gate may soar relatively high over a silicon substrate. This may create problems in defining the length of the gate when the devices are scaled down. Also, when lightly doped drain ion implants and source and drain ion implants are formed, masking steps are required. Thus the cost for fabricating the devices is increased.
  • Therefore, there has been a need to create a transistor device having a new gate structure.
    • SUMMARY
  • Embodiments relate to semiconductor device, and more particularly, to a method for fabricating a transistor that may overcome a short channel effect(SCE).
  • Accordingly, embodiments are directed to a transistor device and a method for manufacturing the same that substantially obviates one or more problems due to limitations and disadvantages of the related art.
  • Embodiments relate to a transistor device and a method for manufacturing the same, which effectively may reduce size of a semiconductor device.
  • Additional advantages, objects, and features of the embodiments will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the embodiments. The objectives and other advantages of the embodiments may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
  • Embodiments relate to a method for fabricating a transistor by forming a first insulation layer and a second insulation layer over a semiconductor substrate; selectively etching the first and second insulation layers and semiconductor substrate to form a recess; depositing a gate insulation layer and a gate conductor layer; planarizing the gate insulation layer and the gate conductor layer to form a gate structure filling the recess; removing the second insulation layer; forming a spacer over a side wall of the gate; implanting ions into the semiconductor substrate near the spacer to form source and drain regions; wet etching the second insulation layer and the gate insulation layer to expose an upper side wall of the gate and upper portions of the source and drain regions; and forming a salicide layer on the exposed surface of the gate and over the source and drain regions.
  • The planarizing may be carried out by chemical mechanical polishing (CMP) of the gate conductor using the second insulation layer as a polishing stop layer.
  • The LDD and the source and drain ion implantation profile may be formed by ion implantation using a mask once in the source and drain regions. The gate conductor may include polysilicon, and the gate insulation layer may include nitride-based oxide, hafnium-based oxide, tantalum-based oxide, or titanium-based oxide.
  • The recess may be etched to a depth of 500 Å to 2000 Å.
  • The wet etching of the second insulation layer leaves a portion of the second insulation layer which is over the source and drain regions, adjacent the gate insulation layer and below the spacer. The spacer entirely covers and extends beyond the top surface of the second insulation layer.
  • Embodiments relate to a transistor device including a recess in a surface of semiconductor substrate; a gate insulation layer formed over an inner side of the recess; a gate conductor filling the recess in which the gate insulation layer is formed; and source and drain regions located over the substrate adjacent the recess. An upper portion of the gate conductor projects above the surface of the semiconductor substrate. A spacer may be formed over the side wall of a gate insulation portion that is projected above the surface of semiconductor substrate. A salicide layer may be formed over a upper portion of the gate and over the source and drain regions.
  • Embodiments relate to a transistor device and a method for manufacturing the same, which effectively may reduce size of a semiconductor device.
  • It is to be understood that both the foregoing general description and the following detailed description of the embodiments are exemplary and explanatory and are intended to provide further explanation of the claimed subject matter.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIGS. 1 through 7 are sectional views illustrating a transistor device and a method for fabricating the same according to embodiments.
    •  DETAILED DESCRIPTION
  • With reference to FIG. 1, a first insulation layer 3 and a second insulation layer 5 are deposited over a semiconductor substrate 1. A first photoresist mask layer 100 is formed over the insulating layers for etching the first insulation layer 3 and the second insulation layer 5. First insulation layer 3 may be composed of silicon oxide while the second insulation layer 5 may be composed of silicon nitride.
  • In FIG. 2, the first and the second insulation layer 3 and 5 are selectively etched using mask 100 to create patterns 3′ and 5′, which collectively constitute etching mask 6. A dry etching process using mask 6 forms recess 2 in the semiconductor substrate 1. The recess 2 may be etched to a depth of approximately 500 Å to 2000 Å.
  • In FIG. 3, a gate insulation layer 7 and a gate conductor layer are deposited. A gate 9 and the gate insulation layer 7 are planarized using a chemical mechanical polishing (CMP) method using the pattern of the second insulation layer 5′ as a stop layer. Therefore, gate 9, which fills recess 2, is approximately 500 Å to 2000 Å thick. The gate 9 may include polysilicon and the gate insulation layer may include a nitride-based oxide, hafnium-based oxide, tantalum-based oxide, or titanium-based oxide.
  • In FIG. 4, the pattern of the insulation layer 5′ has been completely removed using, for example, a wet etching method using phosphoric acid solution.
  • With reference to FIG. 5, after depositing a layer for the spacer 11 over the side wall of the gate 7, spacer 11 is formed by using, for example, a front etching method. The spacer 11 may also be formed by an isotropic etching method. And then LDD and high density source and drain regions 13′ are formed by implanting ions. The ion implantation process is performed once at the LDD and source and drain regions 13′ to form a profile of the LDD and source/drain regions 13′. The ion implant profile after annealing is shown.
  • In FIG. 6, a gate insulation layer 7′ and a second pattern 3″ of the first insulation layer are formed by wet etching. The second pattern 3″ of the first insulation layer forms a recessed filler over the gate insulation layer 7′ between the spacer 11 and LDD region. Gate insulation 7′ is recessed from the top plane of the gate and spacers 11, to expose an upper side wall of the gate 9.
  • In FIG. 7, a salicide process is performed on gate 9, and source and drain regions 13 to form salicide layer 15. The salicide layer 15 is formed by heat treatment between 700 to 1000 ° C., after depositing one of, for example, cobalt, nickel, and Ti over the whole surface.
  • As described, embodiments relate to a method for fabricating a semiconductor transistor. A new scheme, facilitating a scaling down of the size of the transistors, is proposed. The gate resistance may be reduced without increasing the area used on the surface of the substrate. Lateral diffusion of the ion implant source may be more easily controlled to reduce the short channel effect. It is therefore possible to implement a shallow well ion implantation process at a smaller device scale, with smaller transistor features.
  • It will be obvious and apparent to those skilled in the art that various modifications and variations can be made in the embodiments disclosed. Thus, it is intended that the disclosed embodiments cover the obvious and apparent modifications and variations, provided that they are within the scope of the appended claims and their equivalents.

Claims (21)

1-8. (canceled)
9. A transistor device comprising:
a semiconductor substrate having a recess;
a gate insulation layer covering the bottom and sides of the recess;
a gate conductor filling the recess and projected over the semiconductor substrate;
a spacer over the upper sidewall of the gate;
source and drain regions formed over the semiconductor substrate near the spacer; and
a salicide layer formed over the gate, and the source and drain regions.
10. A transistor device comprising:
a recess in a surface of semiconductor substrate;
a gate insulation layer formed over an inner side of the recess;
a gate conductor filling the recess in which the gate insulation layer is formed; and
source and drain regions located over the substrate adjacent the recess.
11. A transistor device according to claim 10, wherein an upper portion of the gate conductor projects above the surface of the semiconductor substrate.
12. A transistor device according to claim 11, wherein a spacer is formed over the side wall of a gate insulation portion that is projected above the surface of semiconductor substrate.
13. A transistor device according to claim 10, wherein a salicide layer is formed over a upper portion of the gate and over the source and drain regions.
14. A transistor device according to claim 10, wherein the gate region is made of polysilicon.
15. A method according to claim 10, wherein the gate insulation layer includes one selected from the group consisting of nitride-based oxide, hafnium-based oxide, tantalum-based oxide, and titanium-based oxide.
16. An apparatus comprising:
a semiconductor substrate having a recess formed therein;
a gate formed in and protruding from the recess;
insulating layer patterns formed over sidewalls of the gate such that an uppermost surface of the gate projects above the uppermost surface of the insulating layer patterns;
spacers formed over the sidewalls of the gate such that an uppermost surface of the spacers projects above the uppermost surface of the gate; and
a salicide layer formed on the uppermost surface and also the uppermost sidewalls of the gate.
17. The apparatus of claim 16, wherein the insulating layer patterns are composed of an oxide material.
18. The apparatus of claim 17, wherein the oxide material comprises silicon oxide.
19. The apparatus of claim 16, wherein the recess has a depth of approximately 500 Å to 2000 Å.
20. The apparatus of claim 16, wherein the gate is composed of polysilicon.
21. The apparatus of claim 16, further comprising a gate insulation layer formed in the recess and under the gate.
22. The apparatus of claim 21, wherein the gate insulation layer is recessed from the uppermost surface of the gate to expose the upper sidewalls of the gate.
23. The apparatus of claim 21, wherein the gate insulation layer is composed of one selected from the group consisting of nitride-based oxide, hafnium-based oxide, tantalum-based oxide, and titanium-based oxide.
24. The apparatus of claim 16, further comprising lightly doped drain and source and drain regions formed in the semiconductor substrate adjacent to the recess.
25. The apparatus of claim 24, further comprising second salicide layers formed on the lightly doped drain and source and drain regions.
26. The apparatus of claim 25, wherein the second salicide layers are composed of one of cobalt, nickel and titanium.
27. The apparatus of claim 16, wherein a portion of the salicide layers are formed on the gate insulating layer.
28. The apparatus of claim 16, wherein the salicide layers are composed of one of cobalt, nickel and titanium.
US12/192,224 2005-12-29 2008-08-15 Transistor device and method for manufacturing the same Abandoned US20080296672A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/192,224 US20080296672A1 (en) 2005-12-29 2008-08-15 Transistor device and method for manufacturing the same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020050133428A KR100721245B1 (en) 2005-12-29 2005-12-29 Transistor element and formation method
KR10-2005-0133428 2005-12-29
US11/616,804 US7497749B2 (en) 2006-04-14 2006-12-27 Outboard motor engine
US12/192,224 US20080296672A1 (en) 2005-12-29 2008-08-15 Transistor device and method for manufacturing the same

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
US11/616,804 Continuation US7497749B2 (en) 2005-12-29 2006-12-27 Outboard motor engine

Publications (1)

Publication Number Publication Date
US20080296672A1 true US20080296672A1 (en) 2008-12-04

Family

ID=38214332

Family Applications (2)

Application Number Title Priority Date Filing Date
US11/615,804 Active 2026-12-26 US7427546B2 (en) 2005-12-29 2006-12-22 Transistor device and method for manufacturing the same
US12/192,224 Abandoned US20080296672A1 (en) 2005-12-29 2008-08-15 Transistor device and method for manufacturing the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
US11/615,804 Active 2026-12-26 US7427546B2 (en) 2005-12-29 2006-12-22 Transistor device and method for manufacturing the same

Country Status (3)

Country Link
US (2) US7427546B2 (en)
KR (1) KR100721245B1 (en)
CN (1) CN1992184A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284223A1 (en) * 2005-06-17 2006-12-21 Dongbu Electronics Co., Ltd. CMOS image sensor and manufacturing method thereof

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8338887B2 (en) * 2005-07-06 2012-12-25 Infineon Technologies Ag Buried gate transistor
KR100824532B1 (en) * 2006-12-11 2008-04-22 동부일렉트로닉스 주식회사 Semiconductor device and manufacturing method thereof
KR101010115B1 (en) * 2008-05-02 2011-01-24 주식회사 하이닉스반도체 Semiconductor element and method of forming the same
KR101010946B1 (en) * 2008-07-04 2011-01-25 주식회사 하이닉스반도체 Semiconductor device and manufacturing method thereof
CN101640218B (en) * 2009-06-09 2012-08-08 上海宏力半导体制造有限公司 Metallic oxide semiconductor field effect transistor and manufacturing method thereof
CN103378150B (en) * 2012-04-23 2016-04-20 中芯国际集成电路制造(上海)有限公司 Semiconductor device and manufacture method thereof
CN103681290B (en) * 2012-09-26 2016-08-03 中芯国际集成电路制造(上海)有限公司 The forming method of silicide

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020008291A1 (en) * 1997-02-04 2002-01-24 Satoshi Shimizu Mis transistor and method of fabricating the same
US6531380B2 (en) * 2000-06-05 2003-03-11 Chartered Semiconductor Manufacturing Ltd. Method of fabricating T-shaped recessed polysilicon gate transistors
US20030052333A1 (en) * 1999-12-28 2003-03-20 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
US20050136580A1 (en) * 2003-12-22 2005-06-23 Luigi Colombo Hydrogen free formation of gate electrodes
US20050275042A1 (en) * 2004-06-10 2005-12-15 Samsung Electronics Co., Ltd. Semiconductor device including a field effect transistor and method of forming thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6093947A (en) * 1998-08-19 2000-07-25 International Business Machines Corporation Recessed-gate MOSFET with out-diffused source/drain extension
US6303448B1 (en) * 1998-11-05 2001-10-16 Taiwan Semiconductor Manufacturing Company Method for fabricating raised source/drain structures
KR20010080432A (en) * 1998-11-12 2001-08-22 피터 엔. 데트킨 Field effect transistor structure with abrupt source/drain junctions
US6498062B2 (en) * 2001-04-27 2002-12-24 Micron Technology, Inc. DRAM access transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020008291A1 (en) * 1997-02-04 2002-01-24 Satoshi Shimizu Mis transistor and method of fabricating the same
US20030052333A1 (en) * 1999-12-28 2003-03-20 Intel Corporation Field effect transistor structure with self-aligned raised source/drain extensions
US6531380B2 (en) * 2000-06-05 2003-03-11 Chartered Semiconductor Manufacturing Ltd. Method of fabricating T-shaped recessed polysilicon gate transistors
US20050136580A1 (en) * 2003-12-22 2005-06-23 Luigi Colombo Hydrogen free formation of gate electrodes
US20050275042A1 (en) * 2004-06-10 2005-12-15 Samsung Electronics Co., Ltd. Semiconductor device including a field effect transistor and method of forming thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060284223A1 (en) * 2005-06-17 2006-12-21 Dongbu Electronics Co., Ltd. CMOS image sensor and manufacturing method thereof

Also Published As

Publication number Publication date
US20070152284A1 (en) 2007-07-05
US7427546B2 (en) 2008-09-23
CN1992184A (en) 2007-07-04
KR100721245B1 (en) 2007-05-22

Similar Documents

Publication Publication Date Title
US6531380B2 (en) Method of fabricating T-shaped recessed polysilicon gate transistors
US7427546B2 (en) Transistor device and method for manufacturing the same
US7488660B2 (en) Extended raised source/drain structure for enhanced contact area and method for forming extended raised source/drain structure
US7777273B2 (en) MOSFET having recessed channel
CN100431152C (en) Highly integrated semiconductor device and manufacturing method thereof
US7754593B2 (en) Semiconductor device and manufacturing method therefor
US7316945B2 (en) Method of fabricating a fin field effect transistor in a semiconductor device
US8258054B2 (en) Method for fabricating semiconductor device
US20060286757A1 (en) Semiconductor product and method for forming a semiconductor product
US7851329B2 (en) Semiconductor device having EDMOS transistor and method for manufacturing the same
US6395606B1 (en) MOSFET with metal in gate for reduced gate resistance
US20090261429A1 (en) Transistor and method for manufacturing thereof
US20090020801A1 (en) Two-bit flash memory cell structure and method of making the same
US7557012B2 (en) Method for forming surface strap
KR100442780B1 (en) Method of manufacturing short-channel transistor in semiconductor device
US7098098B2 (en) Methods for transistors formation using selective gate implantation
JP3813577B2 (en) Manufacturing method of short channel transistor of semiconductor device
KR100788362B1 (en) MOSFET device and method of forming the same
US7095086B2 (en) Semiconductor devices and methods of manufacturing the same
US7145192B2 (en) MOS transistor and method of manufacturing the same
US20100127338A1 (en) Semiconductor device and method for manufacturing the same
KR20070017787A (en) Recessed Channel Array Transistors and Manufacturing Method Thereof
KR100546846B1 (en) Gate electrode formation method of semiconductor device
KR100965214B1 (en) Transistor Formation Method
KR100591151B1 (en) Semiconductor element and manufacturing method thereof

Legal Events

Date Code Title Description
STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载