US20080187613A1 - Method of manufacturing wafer-level chip-size package and molding apparatus used in the method - Google Patents
Method of manufacturing wafer-level chip-size package and molding apparatus used in the method Download PDFInfo
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- US20080187613A1 US20080187613A1 US12/078,638 US7863808A US2008187613A1 US 20080187613 A1 US20080187613 A1 US 20080187613A1 US 7863808 A US7863808 A US 7863808A US 2008187613 A1 US2008187613 A1 US 2008187613A1
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- wafer
- mold
- encapsulant
- lower mold
- molding apparatus
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07 e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
- B29C43/36—Moulds for making articles of definite length, i.e. discrete articles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C43/00—Compression moulding, i.e. applying external pressure to flow the moulding material; Apparatus therefor
- B29C43/32—Component parts, details or accessories; Auxiliary operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
Definitions
- the present invention relates to a method of manufacturing a semiconductor package, and a molding apparatus used in the method, and more particularly, to a method of manufacturing a wafer-level chip-size package, and a molding apparatus used in the method.
- wafer-level chip-size packages In keeping with the trend toward miniaturization in the development of electronic devices, i.e., the trend toward making ever smaller and ever thinner packages, wafer-level chip-size packages. Such packages, which are about the same size as the incorporated semiconductor chips and which are substantially complete before being separated from the wafer, have been the subject of increasing interest.
- a rewiring process and an encapsulating process are performed while the chips remain in a wafer state, after which the individual chip packages are separated from the wafer using a dicing process.
- a thin wafer is used for making a wafer-level chip-size package, the wafer tends to have insufficient strength and is more susceptible to deformation such as bending and/or warping. Both the likelihood and seriousness of such wafer warping formation tends to increase as the diameter of the wafer increases. Similar problems are associated with larger semiconductor chip geometries which may experience or be susceptible to chip warping. Both wafer warping and/or chip warping are detrimental to the fabrication process and tend to decrease the overall process yield and may degrade the quality and reliability of the wafer-level chip-size packages that are produced.
- conventional wafer-level chip-size packages are susceptible to wafer warping because only the front surface of the wafer is molded using an encapsulant. Further, when a wafer is molded only on its front surface, the edges of chips of the wafer may be more susceptible to cracking or chipping during the subsequent dicing processing and associated handling. Moreover, conventional wafer-level chip-size packages having and encapsulant layer provided only on the front surface tend to be more susceptible to semiconductor chip cracking resulting from impacts associated with the handling during subsequent wafer level testing, board mounting processes and package test processes.
- the present invention provides exemplary methods of manufacturing a wafer-level chip-size package that may exhibit increased resistance to wafer warping and semiconductor chip edge cracking.
- the present invention also provides an exemplary molding apparatus that can be used for manufacturing a wafer-level chip-size package.
- An exemplary embodiment of a manufacturing method provides a method of manufacturing a wafer-level chip-size package including preparing a wafer having a lower surface and a plurality of semiconductor chips on an upper surface, the semiconductor chips including conductive bumps on their upper surface; molding the upper and lower surfaces of the wafer at the same time using an encapsulant; exposing upper surfaces of the conductive bumps by removing an upper portion of the encapsulant; forming terminals on the exposed surfaces of the conductive bumps; and separating the wafer into individual wafer-level chip-size packages.
- the wafer including the plurality of semiconductor chips and having conductive bumps on its upper surface may be formed after preparing a wafer comprising a plurality of semiconductor chips having input/output pads, by forming the conductive bumps on the input/output pads of the semiconductor chips.
- the molding of the upper and lower surfaces of the wafer using an encapsulant may be performed using either an injection molding method or a compression molding method.
- the injection molding method may include: tightly contacting a releasing film to a lower mold and an upper mold of a molding apparatus; loading the wafer having the plurality of conductive bumps between the lower mold and the upper mold; injecting the encapsulant between the lower mold and the upper mold; heating the upper and/or lower molds while closed to cure, at least partially, the injected encapsulant or cooling an encapsulant melt to solidify the encapsulant; and separating the wafer from the upper and lower molds using the releasing film.
- the wafer molded using the encapsulant may be subjected to a post-molding heat treatment after being separated from the upper and lower molds.
- the encapsulant utilized in the injection molding method may be a liquid encapsulant or a solid encapsulant.
- the compression molding method may include: contacting a releasing film tightly to the lower mold and the upper mold of the molding apparatus; placing encapsulant sheets on the tightly contacted releasing film; placing the wafer between the encapsulant sheets; thermally compressing the encapsulant sheets onto the upper and lower surfaces of the wafer by pressing the upper and lower molds together; curing the upper and lower molds together with the encapsulant; and separating the wafer from the upper and lower molds using the releasing film.
- the encapsulant sheets that may be used in the compression molding method may include one or more materials such as polyimide, epoxy and silicon.
- an exemplary molding apparatus useful for manufacturing wafer-level chip-size packages.
- the exemplary molding apparatus includes: a lower mold support where a lower mold is located; a mold moving control unit, located under the lower mold, that moves the lower mold and the lower mold support; an upper mold support that supports an upper mold that faces the lower mold; an encapsulant injection unit that injects an encapsulant between the lower mold and the upper mold; and a temperature control unit that controls the temperature of the lower mold.
- An exemplary mold moving control unit may include: a supporting unit that supports the lower mold; and a hydraulic pump that moves the lower mold and the lower mold support upward.
- An exemplary encapsulant injection unit may include: an encapsulant injection controller that controls an injection speed and quantity of the encapsulant; an air tube connected to the encapsulant injection controller; an encapsulant source connected to the air tube; and an injection needle that injects the encapsulant between the lower mold and the upper mold.
- An exemplary temperature control unit may include: a heat controller that controls a temperature of the lower mold; and a heat pipe that connects the heat controller to the lower mold.
- the lower and upper surfaces of a wafer are molded at the same time using an encapsulant, warping of even thin and large wafers can be reduced or eliminated, and occurrence of cracking at the edges of semiconductor chips resulting from impacts during subsequent handling can also be reduced or prevented.
- FIGS. 1 through 5 are cross-sectional views illustrating certain steps in and intermediate structures produced by an exemplary embodiment of a method of manufacturing a wafer-level chip-size package according to the present invention
- FIG. 6 is a schematic diagram of an exemplary molding apparatus used for manufacturing a wafer-level chip-size package according to the present invention.
- FIGS. 7A through 7C show a molding process of an encapsulant depicted in FIG. 2 , performed by the molding apparatus depicted in FIG. 6 ;
- FIGS. 8A through 8C show another molding process of an encapsulant depicted in FIG. 2 , performed by the molding apparatus depicted in FIG. 6 .
- FIGS. 1-5 are cross-sectional views of an exemplary method of manufacturing a wafer-level chip-size package according to an embodiment of the present invention.
- a wafer 11 comprising a plurality of semiconductor chips (not shown) and a plurality of conductive bumps 13 on its upper surface, may be prepared by any conventional and/or proprietary methods.
- a plurality of semiconductor chips, each having a plurality of input/output pads will be formed on the upper surface of the semiconductor wafer 11 .
- a corresponding plurality of conductive bumps are formed on the input/output pads.
- each conductive bump 13 will be in direct electrical connection with at least one input/output pad of a semiconductor chip.
- the height of the conductive bumps 13 may be varied within a broad range, but a nominal height of approximately 100 ⁇ m is typically adequate.
- both the upper and lower surfaces of the wafer 11 having the conductive bumps 13 are then molded using an encapsulant 15 .
- the molding of the upper surface of the wafer 1 , having the conductive bumps, is performed substantially simultaneously with the molding of the lower surfaces of the wafer 11 , rather than sequentially. Because the upper and lower surfaces of the wafer 11 are molded with encapsulant at the same time, both surfaces are subjected to substantially equivalent thermal stresses and mechanical forces. This general balancing of the stresses and forces applied to the opposite sides of the wafer 11 will tend to reduce the likelihood of wafer warping, even in applications in which the wafer is thin and/or wide.
- the substantially simultaneous molding of the upper and lower surfaces of the wafer 11 may be performed using an injection molding method, a compression molding method or a combination thereof.
- an upper portion of the encapsulant layer 15 formed on the upper surface of the wafer 11 may then be removed, typically by grinding or polishing, to expose upper surfaces of the conductive bumps 13 .
- a plurality of terminals 17 may be formed on the exposed surfaces of the conductive bumps 13 .
- the terminals 17 may be formed by depositing solder balls or solder paste on the upper surfaces of the conductive bumps 13 and then reflowing the solder to complete formation of the terminals.
- the individual semiconductor chips may be subjected to functional and/or parametric testing to identify known good die and/or classify the relative performance of the semiconductor chips.
- the wafer 11 may then be diced to separate the encapsulated wafer into individual semiconductor packages 25 that each contain one or more of the semiconductor chips that had been formed on the wafer 11 .
- the wafer 11 having the terminals 17 may be attached to an adhesive tape 21 or mounted on a vacuum chuck or some other holding device (not shown), which is supported by a wafer frame 19 or other structure.
- the supported wafer 11 may then be cut or diced along cutting lines 23 provided between adjacent individual semiconductor chips to separate the wafer into individual semiconductor packages 25 , that may, as illustrated in FIG. 5 , be mounted on a board 27 or other mounting substrate for operation in an electronic device, assembly or subassembly.
- FIG. 6 is a schematic diagram of an exemplary embodiment of a molding apparatus used for manufacturing a wafer-level chip-size package according to the present invention.
- the molding apparatus shown in FIG. 6 may be used for both injection molding and compression molding.
- a liquid state or solid state encapsulant may be used, and for compression molding, an encapsulant sheet is used.
- the molding apparatus comprises a lower mold support 103 on which a lower mold 101 is located, and a mold moving control unit 105 connected to the lower mold 101 for moving the lower mold 101 and the lower mold support 103 upward.
- the exemplary mold moving control unit 105 includes a supporting unit 105 a for supporting the lower mold 101 and moving the lower mold 101 and the lower mold support 103 upward, and a pump set 105 b or other means suitable for applying a vacuum at the surfaces of the lower mold 101 and an upper mold 107 .
- actuating assemblies may be utilized for moving the supporting unit 105 a and its supported lower mold 101 relative to the upper mold 107 , including one or more hydraulic, pneumatic, electric and magnetic elements.
- the exemplary molding apparatus also comprises an upper mold support 109 for supporting the upper mold 107 , which faces the lower mold support 103 supporting the lower mold 101 .
- the exemplary molding apparatus further includes an encapsulant injection unit, 111 , 113 , 115 , and 117 , for injecting the encapsulant into the opening formed between the upper mold 107 and the lower mold 101 .
- An exemplary encapsulant injection unit includes: an encapsulant injection controller 111 for controlling the injection speed and quantity of the encapsulant, an air tube 113 connected to the encapsulant injection controller 111 , an encapsulant source unit 115 connected to the air tube 113 , and an injection needle 117 connected to the encapsulant source 115 for injecting the encapsulant between the upper mold 107 and the lower mold 101 .
- the encapsulant source unit 115 is designed to use a liquid encapsulant, but when a solid encapsulant such as EMC is used, a heating device (not shown) can be provided on the encapsulant source unit 115 .
- the injection needle 117 enters the opening through the upper mold 107
- other embodiments may provide one or more injection needle(s) 117 inserted through the lower mold, or may include a plurality of injection needles communicating with the opening through both the upper mold and the lower mold.
- the exemplary molding apparatus as illustrated in FIG. 6 comprises a temperature control unit, 119 , 121 , for controlling the temperature of the lower mold 101 .
- An exemplary temperature control unit will include both a temperature controller 119 for controlling the temperature of the lower mold 101 , and a heat pipe 121 or power supply (not shown) controlled by the temperature controller 119 for heating the lower mold 101 as necessary.
- FIGS. 7A-C illustrate an exemplary embodiment of an encapsulant molding process for producing a structure generally corresponding to FIG. 2 , using an exemplary molding apparatus as generally depicted in FIG. 6 . More specifically, FIGS. 7A-C show an encapsulant molding process according to an exemplary embodiment of an injection molding method according to the present invention.
- a tape roller 123 or other supply means is provided adjacent the upper mold 107 and the lower mold 101 for supplying a releasing film 125 to the molds.
- a releasing film 125 is then arranged across the opposing faces of the upper mold 107 and the lower mold 101 and a wafer 11 having conductive bumps 13 is positioned between the releasing films provided on the upper and lower molds 107 , 101 .
- FIG. 7A As depicted in FIG.
- the releasing films 125 may be arranged to contact the upper mold 107 and lower mold 101 very closely, by suction created at vacuum holes 126 using the pump set 105 b or other vacuum source, by “sealing” peripheral portions of the releasing films and increasing the pressure between the films to tend to force them against the respective mold faces or by any other suitable means.
- an encapsulant i.e., a liquid resin
- injection needle 117 is injected through injection needle 117 into the space formed between the upper mold 107 and the lower mold 101 that contains the wafer 11 .
- the lower mold 101 and/or the upper mold 107 may be heated in order to cure the encapsulant 15 .
- the upper mold 107 and the lower mold 101 are separated and the encapsulated wafer 11 removed from the mold.
- the encapsulated wafer 11 and the encapsulant 15 may then be subjected to additional post-molding processing such as heat treatment to finish curing the encapsulant or otherwise complete the molding process.
- the encapsulant utilized is a normally solid composition
- the encapsulant may be heated to form a melt or a flowable semi-solid that may then be injected through injection needle 117 into the space formed between the upper mold 107 and the lower mold 101 that contains the wafer 11 .
- the lower mold 101 and/or the upper mold 107 may be cooled in order to solidify the injected encapsulant 15 .
- FIGS. 8A-C show another exemplary embodiment of an encapsulant molding process for producing structure generally corresponding to FIG. 2 , using molding apparatus generally corresponding to FIG. 6 . More specifically, FIGS. 8A-C show an encapsulant molding process using a compression molding method.
- a tape roller 123 or other dispensing means may be provided adjacent each of the upper mold 107 and the lower mold 101 from which a releasing film 125 may be applied to the opposing faces of the molds.
- the releasing films 125 may be made to contact or conform very closely to the opposing surfaces the upper mold 107 and lower mold 101 very closely by, for example, applying a vacuum to the releasing films through vacuum holes 126 using the pump set 105 b or other vacuum source.
- Encapsulant sheets 127 may then be applied to selected portions of the releasing films 125 after which a wafer 11 may be arranged between the encapsulant sheets.
- an encapsulant sheet 127 may be provided on the upper and/or lower surfaces of the wafer 11 before the wafer is placed between the molds.
- the encapsulant sheets 127 may include one or more materials selected from the group consisting of polyimide, epoxy and silicon. Then, as illustrated in FIG. 8B , the molds 101 , 107 are forced together and typically heated so that encapsulant sheets 127 will be thermally compressed onto the upper and lower surfaces of the wafer 11 . The heating and pressure within the mold may be sufficient to cure the encapsulant sheets 127 or additional post-molding processing may be necessary to complete the encapsulation process. Once bonded to the surfaces of the wafer 11 , the encapsulant sheets 127 become encapsulant layers 15 .
- the upper mold 107 and the lower mold 101 may be separated and the encapsulated wafer 11 removed from the mold.
- the encapsulated wafer 11 may be subjected to some post-molding processes, such as additional heat treatment, to complete the molding process.
- the molding apparatus used for manufacturing a wafer-level chip-size according to the present invention can mold a wafer using either injection molding, compression molding or a combination of injection and compression molding. Therefore, the molding apparatus according to the present invention can use a liquid encapsulant, a solid encapsulant, or encapsulant sheets.
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Abstract
Provided are a method of manufacturing wafer-level chip-size packages and a molding apparatus suitable for practicing the method whereby a semiconductor wafer having a plurality of semiconductor chips formed thereon may be encapsulated. The semiconductor wafer, typically with a plurality of conductive bumps extending from the semiconductor chips, will be placed in a cavity formed between upper and lower molds. Injection molding of an encapsulant composition or compression molding of encapsulant sheets may then be used to apply encapsulating layers to the upper and lower surfaces of the semiconductor wafer in a substantially simultaneous manner, thereby reducing the likelihood of warping and mechanical damage to the semiconductor wafer. The wafer-level chip-size packages can then be separated from the encapsulated semiconductor wafer.
Description
- This application claims priority from Korean Patent Application No. 03-59832, which was filed on 28 Aug. 2003 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
- 1. Field of the Invention
- The present invention relates to a method of manufacturing a semiconductor package, and a molding apparatus used in the method, and more particularly, to a method of manufacturing a wafer-level chip-size package, and a molding apparatus used in the method.
- 2. Description of the Related Art
- In keeping with the trend toward miniaturization in the development of electronic devices, i.e., the trend toward making ever smaller and ever thinner packages, wafer-level chip-size packages. Such packages, which are about the same size as the incorporated semiconductor chips and which are substantially complete before being separated from the wafer, have been the subject of increasing interest. During the manufacture of a wafer-level chip-size package, typically both a rewiring process and an encapsulating process are performed while the chips remain in a wafer state, after which the individual chip packages are separated from the wafer using a dicing process.
- If a thin wafer is used for making a wafer-level chip-size package, the wafer tends to have insufficient strength and is more susceptible to deformation such as bending and/or warping. Both the likelihood and seriousness of such wafer warping formation tends to increase as the diameter of the wafer increases. Similar problems are associated with larger semiconductor chip geometries which may experience or be susceptible to chip warping. Both wafer warping and/or chip warping are detrimental to the fabrication process and tend to decrease the overall process yield and may degrade the quality and reliability of the wafer-level chip-size packages that are produced.
- In particular, conventional wafer-level chip-size packages are susceptible to wafer warping because only the front surface of the wafer is molded using an encapsulant. Further, when a wafer is molded only on its front surface, the edges of chips of the wafer may be more susceptible to cracking or chipping during the subsequent dicing processing and associated handling. Moreover, conventional wafer-level chip-size packages having and encapsulant layer provided only on the front surface tend to be more susceptible to semiconductor chip cracking resulting from impacts associated with the handling during subsequent wafer level testing, board mounting processes and package test processes.
- The present invention provides exemplary methods of manufacturing a wafer-level chip-size package that may exhibit increased resistance to wafer warping and semiconductor chip edge cracking.
- The present invention also provides an exemplary molding apparatus that can be used for manufacturing a wafer-level chip-size package.
- An exemplary embodiment of a manufacturing method according to the present invention provides a method of manufacturing a wafer-level chip-size package including preparing a wafer having a lower surface and a plurality of semiconductor chips on an upper surface, the semiconductor chips including conductive bumps on their upper surface; molding the upper and lower surfaces of the wafer at the same time using an encapsulant; exposing upper surfaces of the conductive bumps by removing an upper portion of the encapsulant; forming terminals on the exposed surfaces of the conductive bumps; and separating the wafer into individual wafer-level chip-size packages.
- The wafer including the plurality of semiconductor chips and having conductive bumps on its upper surface may be formed after preparing a wafer comprising a plurality of semiconductor chips having input/output pads, by forming the conductive bumps on the input/output pads of the semiconductor chips. The molding of the upper and lower surfaces of the wafer using an encapsulant may be performed using either an injection molding method or a compression molding method.
- If an injection molding method is used to mold the upper and lower surfaces of the wafer, the injection molding method may include: tightly contacting a releasing film to a lower mold and an upper mold of a molding apparatus; loading the wafer having the plurality of conductive bumps between the lower mold and the upper mold; injecting the encapsulant between the lower mold and the upper mold; heating the upper and/or lower molds while closed to cure, at least partially, the injected encapsulant or cooling an encapsulant melt to solidify the encapsulant; and separating the wafer from the upper and lower molds using the releasing film. The wafer molded using the encapsulant may be subjected to a post-molding heat treatment after being separated from the upper and lower molds. The encapsulant utilized in the injection molding method may be a liquid encapsulant or a solid encapsulant.
- If a compression molding method is used to mold the upper and lower surfaces of the wafer, the compression molding method may include: contacting a releasing film tightly to the lower mold and the upper mold of the molding apparatus; placing encapsulant sheets on the tightly contacted releasing film; placing the wafer between the encapsulant sheets; thermally compressing the encapsulant sheets onto the upper and lower surfaces of the wafer by pressing the upper and lower molds together; curing the upper and lower molds together with the encapsulant; and separating the wafer from the upper and lower molds using the releasing film. The encapsulant sheets that may be used in the compression molding method may include one or more materials such as polyimide, epoxy and silicon.
- In accordance with another aspect of the present invention, there is provided an exemplary molding apparatus useful for manufacturing wafer-level chip-size packages. The exemplary molding apparatus includes: a lower mold support where a lower mold is located; a mold moving control unit, located under the lower mold, that moves the lower mold and the lower mold support; an upper mold support that supports an upper mold that faces the lower mold; an encapsulant injection unit that injects an encapsulant between the lower mold and the upper mold; and a temperature control unit that controls the temperature of the lower mold.
- An exemplary mold moving control unit may include: a supporting unit that supports the lower mold; and a hydraulic pump that moves the lower mold and the lower mold support upward. An exemplary encapsulant injection unit may include: an encapsulant injection controller that controls an injection speed and quantity of the encapsulant; an air tube connected to the encapsulant injection controller; an encapsulant source connected to the air tube; and an injection needle that injects the encapsulant between the lower mold and the upper mold. An exemplary temperature control unit may include: a heat controller that controls a temperature of the lower mold; and a heat pipe that connects the heat controller to the lower mold.
- According to the present invention, since the lower and upper surfaces of a wafer are molded at the same time using an encapsulant, warping of even thin and large wafers can be reduced or eliminated, and occurrence of cracking at the edges of semiconductor chips resulting from impacts during subsequent handling can also be reduced or prevented.
- The above and other features and advantages of the present invention will become more apparent by describing exemplary embodiments of the manufacturing method and manufacturing apparatus in detail with reference to the attached drawings, in which:
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FIGS. 1 through 5 are cross-sectional views illustrating certain steps in and intermediate structures produced by an exemplary embodiment of a method of manufacturing a wafer-level chip-size package according to the present invention; -
FIG. 6 is a schematic diagram of an exemplary molding apparatus used for manufacturing a wafer-level chip-size package according to the present invention; -
FIGS. 7A through 7C show a molding process of an encapsulant depicted inFIG. 2 , performed by the molding apparatus depicted inFIG. 6 ; and -
FIGS. 8A through 8C show another molding process of an encapsulant depicted inFIG. 2 , performed by the molding apparatus depicted inFIG. 6 . - These drawings have been provided to assist in the understanding of the exemplary embodiments of the invention as described in more detail below and should not be construed as unduly limiting the invention. In particular, the relative spacing, sizing and dimensions of the various elements illustrated in the drawings are not drawn to scale and may have been exaggerated, reduced or otherwise modified for the purpose of improved clarity.
- Hereinafter, exemplary embodiments of the present invention will be described more fully with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure is thorough and complete and fully conveys the concept of the invention to those skilled in the art. In the drawings, identical reference numerals denote the same or corresponding elements.
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FIGS. 1-5 are cross-sectional views of an exemplary method of manufacturing a wafer-level chip-size package according to an embodiment of the present invention. As illustrated inFIG. 1 , awafer 11 comprising a plurality of semiconductor chips (not shown) and a plurality ofconductive bumps 13 on its upper surface, may be prepared by any conventional and/or proprietary methods. In most instances, a plurality of semiconductor chips, each having a plurality of input/output pads, will be formed on the upper surface of thesemiconductor wafer 11. After the input/output pads have been formed, a corresponding plurality of conductive bumps are formed on the input/output pads. In most instances, eachconductive bump 13 will be in direct electrical connection with at least one input/output pad of a semiconductor chip. The height of theconductive bumps 13 may be varied within a broad range, but a nominal height of approximately 100 μm is typically adequate. - As illustrated in
FIG. 2 , both the upper and lower surfaces of thewafer 11 having theconductive bumps 13 are then molded using anencapsulant 15. The molding of the upper surface of the wafer 1, having the conductive bumps, is performed substantially simultaneously with the molding of the lower surfaces of thewafer 11, rather than sequentially. Because the upper and lower surfaces of thewafer 11 are molded with encapsulant at the same time, both surfaces are subjected to substantially equivalent thermal stresses and mechanical forces. This general balancing of the stresses and forces applied to the opposite sides of thewafer 11 will tend to reduce the likelihood of wafer warping, even in applications in which the wafer is thin and/or wide. In addition, because both of the wafer surfaces are molded with and protected by an encapsulant layer, cracking of the edges of semiconductor chips due to impact during subsequent handling of thewafer 11 associated with wafer level testing, board mounting processes and package test processes, can be reduced or prevented. The substantially simultaneous molding of the upper and lower surfaces of thewafer 11 may be performed using an injection molding method, a compression molding method or a combination thereof. - As illustrated in
FIG. 3 , an upper portion of theencapsulant layer 15 formed on the upper surface of thewafer 11 may then be removed, typically by grinding or polishing, to expose upper surfaces of theconductive bumps 13. Afterward, a plurality ofterminals 17 may be formed on the exposed surfaces of theconductive bumps 13. Theterminals 17 may be formed by depositing solder balls or solder paste on the upper surfaces of theconductive bumps 13 and then reflowing the solder to complete formation of the terminals. Once theterminals 17 have been formed, the individual semiconductor chips may be subjected to functional and/or parametric testing to identify known good die and/or classify the relative performance of the semiconductor chips. - As illustrated in
FIG. 4 , typically after the wafer-level testing has been completed, thewafer 11 may then be diced to separate the encapsulated wafer intoindividual semiconductor packages 25 that each contain one or more of the semiconductor chips that had been formed on thewafer 11. As shown inFIG. 4 , thewafer 11 having theterminals 17 may be attached to anadhesive tape 21 or mounted on a vacuum chuck or some other holding device (not shown), which is supported by awafer frame 19 or other structure. The supportedwafer 11 may then be cut or diced along cuttinglines 23 provided between adjacent individual semiconductor chips to separate the wafer into individual semiconductor packages 25, that may, as illustrated inFIG. 5 , be mounted on aboard 27 or other mounting substrate for operation in an electronic device, assembly or subassembly. -
FIG. 6 is a schematic diagram of an exemplary embodiment of a molding apparatus used for manufacturing a wafer-level chip-size package according to the present invention. The molding apparatus shown inFIG. 6 may be used for both injection molding and compression molding. For injection molding, a liquid state or solid state encapsulant may be used, and for compression molding, an encapsulant sheet is used. - As illustrated in
FIG. 6 , the molding apparatus comprises alower mold support 103 on which alower mold 101 is located, and a mold movingcontrol unit 105 connected to thelower mold 101 for moving thelower mold 101 and thelower mold support 103 upward. The exemplary mold movingcontrol unit 105 includes a supportingunit 105 a for supporting thelower mold 101 and moving thelower mold 101 and thelower mold support 103 upward, and a pump set 105 b or other means suitable for applying a vacuum at the surfaces of thelower mold 101 and anupper mold 107. As will be appreciated, a variety of actuating assemblies may be utilized for moving the supportingunit 105 a and its supportedlower mold 101 relative to theupper mold 107, including one or more hydraulic, pneumatic, electric and magnetic elements. The exemplary molding apparatus also comprises anupper mold support 109 for supporting theupper mold 107, which faces thelower mold support 103 supporting thelower mold 101. The exemplary molding apparatus further includes an encapsulant injection unit, 111, 113, 115, and 117, for injecting the encapsulant into the opening formed between theupper mold 107 and thelower mold 101. - An exemplary encapsulant injection unit includes: an
encapsulant injection controller 111 for controlling the injection speed and quantity of the encapsulant, anair tube 113 connected to theencapsulant injection controller 111, anencapsulant source unit 115 connected to theair tube 113, and aninjection needle 117 connected to theencapsulant source 115 for injecting the encapsulant between theupper mold 107 and thelower mold 101. Theencapsulant source unit 115 is designed to use a liquid encapsulant, but when a solid encapsulant such as EMC is used, a heating device (not shown) can be provided on theencapsulant source unit 115. Although, as illustrated inFIG. 6 , theinjection needle 117 enters the opening through theupper mold 107, it will be appreciated that other embodiments may provide one or more injection needle(s) 117 inserted through the lower mold, or may include a plurality of injection needles communicating with the opening through both the upper mold and the lower mold. - In addition, the exemplary molding apparatus as illustrated in
FIG. 6 comprises a temperature control unit, 119, 121, for controlling the temperature of thelower mold 101. An exemplary temperature control unit will include both atemperature controller 119 for controlling the temperature of thelower mold 101, and aheat pipe 121 or power supply (not shown) controlled by thetemperature controller 119 for heating thelower mold 101 as necessary. -
FIGS. 7A-C illustrate an exemplary embodiment of an encapsulant molding process for producing a structure generally corresponding toFIG. 2 , using an exemplary molding apparatus as generally depicted inFIG. 6 . More specifically,FIGS. 7A-C show an encapsulant molding process according to an exemplary embodiment of an injection molding method according to the present invention. - As shown in
FIG. 7A , atape roller 123 or other supply means is provided adjacent theupper mold 107 and thelower mold 101 for supplying a releasingfilm 125 to the molds. A releasingfilm 125 is then arranged across the opposing faces of theupper mold 107 and thelower mold 101 and awafer 11 havingconductive bumps 13 is positioned between the releasing films provided on the upper andlower molds FIG. 7A , the releasingfilms 125 may be arranged to contact theupper mold 107 andlower mold 101 very closely, by suction created atvacuum holes 126 using the pump set 105 b or other vacuum source, by “sealing” peripheral portions of the releasing films and increasing the pressure between the films to tend to force them against the respective mold faces or by any other suitable means. - Next, as shown in
FIG. 7B , an encapsulant, i.e., a liquid resin, is injected throughinjection needle 117 into the space formed between theupper mold 107 and thelower mold 101 that contains thewafer 11. When injection has been completed and the cavity containing thewafer 11 has been substantially filled with theencapsulant 15, thelower mold 101 and/or theupper mold 107 may be heated in order to cure theencapsulant 15. - When curing has been completed or has progressed sufficiently to render the encapsulant generally solid, as shown in
FIG. 7C , theupper mold 107 and thelower mold 101 are separated and the encapsulatedwafer 11 removed from the mold. The encapsulatedwafer 11 and theencapsulant 15 may then be subjected to additional post-molding processing such as heat treatment to finish curing the encapsulant or otherwise complete the molding process. - When, using the configuration shown in
FIG. 7B , the encapsulant utilized is a normally solid composition, the encapsulant may be heated to form a melt or a flowable semi-solid that may then be injected throughinjection needle 117 into the space formed between theupper mold 107 and thelower mold 101 that contains thewafer 11. When injection has been completed and the cavity containing thewafer 11 has been substantially filled with theencapsulant 15, thelower mold 101 and/or theupper mold 107 may be cooled in order to solidify the injectedencapsulant 15. -
FIGS. 8A-C show another exemplary embodiment of an encapsulant molding process for producing structure generally corresponding toFIG. 2 , using molding apparatus generally corresponding toFIG. 6 . More specifically,FIGS. 8A-C show an encapsulant molding process using a compression molding method. - As illustrated in
FIG. 8A , atape roller 123 or other dispensing means may be provided adjacent each of theupper mold 107 and thelower mold 101 from which a releasingfilm 125 may be applied to the opposing faces of the molds. As depicted inFIG. 8A , the releasingfilms 125 may be made to contact or conform very closely to the opposing surfaces theupper mold 107 andlower mold 101 very closely by, for example, applying a vacuum to the releasing films throughvacuum holes 126 using the pump set 105 b or other vacuum source.Encapsulant sheets 127 may then be applied to selected portions of the releasingfilms 125 after which awafer 11 may be arranged between the encapsulant sheets. Alternatively anencapsulant sheet 127 may be provided on the upper and/or lower surfaces of thewafer 11 before the wafer is placed between the molds. Theencapsulant sheets 127 may include one or more materials selected from the group consisting of polyimide, epoxy and silicon. Then, as illustrated inFIG. 8B , themolds encapsulant sheets 127 will be thermally compressed onto the upper and lower surfaces of thewafer 11. The heating and pressure within the mold may be sufficient to cure theencapsulant sheets 127 or additional post-molding processing may be necessary to complete the encapsulation process. Once bonded to the surfaces of thewafer 11, theencapsulant sheets 127 become encapsulant layers 15. - As illustrated in
FIG. 8C , once theencapsulant sheets 127 are sufficiently bonded to the surfaces of thewafer 11, theupper mold 107 and thelower mold 101 may be separated and the encapsulatedwafer 11 removed from the mold. As with the use of liquid encapsulants described above, the encapsulatedwafer 11 may be subjected to some post-molding processes, such as additional heat treatment, to complete the molding process. - As described above, in the method of manufacturing a wafer-level chip-size package according to the present invention, since both upper and lower surfaces of the wafer are molded with an encapsulant at the same time, warping of thin and/or large wafers can be prevented, and semiconductor chips are protected from cracking resulting from impacts incurred during subsequent handling in wafer level testing, board mounting processes and package testing.
- In addition, the molding apparatus used for manufacturing a wafer-level chip-size according to the present invention can mold a wafer using either injection molding, compression molding or a combination of injection and compression molding. Therefore, the molding apparatus according to the present invention can use a liquid encapsulant, a solid encapsulant, or encapsulant sheets.
- While this invention has been particularly shown and described with reference to exemplary embodiments thereof, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (9)
1.-12. (canceled)
13. A molding apparatus for manufacturing a wafer-level chip-size package, the molding apparatus comprising:
a lower mold;
an upper mold;
means for selectively moving the lower mold relative to the upper mold between an open position and a closed position, the lower mold and the upper mold cooperating to form a mold cavity when in the closed position;
means for positioning a semiconductor wafer within the mold cavity;
an encapsulant injection unit arranged and configured to inject an encapsulant composition into the mold cavity; and
means for heating the encapsulant within the cavity to a temperature sufficient to initiate curing of the encapsulant.
14. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 13 , further comprising:
a lower mold support arranged and configured to support the lower mold;
a mold moving control unit arranged and configured for moving the lower mold and the lower mold support;
an upper mold support arranged and configured to support the upper mold; and
a temperature control unit arranged and configured to control the temperature of the lower mold.
15. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 14 , wherein:
the mold moving control unit includes a hydraulic actuator arranged and configured for moving the lower mold support and the lower mold toward the upper mold.
16. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 13 , wherein:
the encapsulant injection unit includes;
an encapsulant injection controller arranged and configured to control an injection rate and an injection volume of the encapsulant composition injected into the mold cavity.
17. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 16 , wherein:
the encapsulant injection unit includes;
an air tube connected to the encapsulant injection controller;
an encapsulant source connected to the air tube; and
an injection needle connected to the encapsulant source through which the encapsulant composition is injected into the mold cavity.
18. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 14 , wherein:
the temperature control unit includes;
a heat controller that controls a temperature of the lower mold; and
a heat pipe that connects the heat controller to the lower mold.
19. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 13 , further comprising:
a releasing film supply arranged and configured for extending a releasing film across a mold surface; and
a vacuum arranged and configured to increase the contact between the releasing film and the mold surface.
20. A molding apparatus for manufacturing a wafer-level chip-size package according to claim 19 , wherein:
the releasing film supply is arranged and configured to provide a first releasing film on an upper surface of the lower mold and a second releasing film on a lower surface of the upper mold; and
vacuum ports arranged on the upper surface of the lower mold and the lower surface of the upper mold whereby a partial vacuum may be applied to backside surfaces of the releasing films to secure the releasing films to the upper and lower surfaces.
Priority Applications (1)
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US12/078,638 US20080187613A1 (en) | 2003-08-28 | 2008-04-02 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
Applications Claiming Priority (4)
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KR1020030059832A KR100546372B1 (en) | 2003-08-28 | 2003-08-28 | Manufacturing method of wafer level chip size package |
KR2003-59832 | 2003-08-28 | ||
US10/842,523 US7371618B2 (en) | 2003-08-28 | 2004-05-11 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
US12/078,638 US20080187613A1 (en) | 2003-08-28 | 2008-04-02 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
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US10/842,523 Division US7371618B2 (en) | 2003-08-28 | 2004-05-11 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
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US20080187613A1 true US20080187613A1 (en) | 2008-08-07 |
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US10/842,523 Expired - Lifetime US7371618B2 (en) | 2003-08-28 | 2004-05-11 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
US12/078,638 Abandoned US20080187613A1 (en) | 2003-08-28 | 2008-04-02 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
Family Applications Before (1)
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US10/842,523 Expired - Lifetime US7371618B2 (en) | 2003-08-28 | 2004-05-11 | Method of manufacturing wafer-level chip-size package and molding apparatus used in the method |
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US (2) | US7371618B2 (en) |
JP (1) | JP2005079577A (en) |
KR (1) | KR100546372B1 (en) |
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Also Published As
Publication number | Publication date |
---|---|
KR20050023536A (en) | 2005-03-10 |
JP2005079577A (en) | 2005-03-24 |
US20050048693A1 (en) | 2005-03-03 |
US7371618B2 (en) | 2008-05-13 |
KR100546372B1 (en) | 2006-01-26 |
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