US20080157391A1

US20080157391A1 - RF semiconductor devices and methods for fabricating the same

Info

Publication number: US20080157391A1
Application number: US12/075,338
Authority: US
Inventors: Yong Guen Lee
Original assignee: Individual
Current assignee: Individual
Priority date: 2002-07-26
Filing date: 2008-03-10
Publication date: 2008-07-03
Also published as: US7361583B2; KR20040011016A; US20040067610A1

Abstract

RF semiconductor devices and methods of making the same are disclosed. In a disclosed method, a trench for defining an active region and an element isolation region is formed in a semiconductor substrate. One or more gate lines is then formed within the active region. Next, an insulating layer is formed on the semiconductor substrate and the gate lines. Contact holes are then formed in the insulating layer. Contact plugs are then formed in the contact holes. Thereafter, a conductive pattern is electrically connected with the contact plugs.

Description

RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No. 10/627,057, filed Jul. 25, 2003 (Attorney Docket No. PIA30746/DBE/US), pending, which is incorporated herein by reference in its entirety. This application also claims the benefit of Korean Application No. 10-2002-0044084, filed on Jul. 26, 2002, which is hereby incorporated by reference in its entirety.

FIELD OF THE DISCLOSURE

The present disclosure relates generally to semiconductor devices; and, more particularly, to radio frequency (RF) semiconductor devices having decreased parasitic capacitance and gate resistance and methods for fabricating the same.

BACKGROUND

Transistors, inductors, capacitors and varactors are widely used radio frequency (RF) semiconductor devices. Recently, silicon has become widely used in fabricating RF semiconductor devices for the purpose of reducing manufacturing costs. However, when an RF semiconductor device is made of silicon, certain characteristics thereof may be deteriorated.
For example, if a transistor, e.g., a MOSFET, is used in an RF circuit operating at high frequency, it is necessary to increase an operating frequency (Ft, Fmax) of the transistor. Factors effecting the operating frequency of MOSFETs include the parasitic capacitance between the gate and the substrate of the MOSFET, the resistance of the gate line, and the like. If the RF MOSFET is produced in a semiconductor manufacturing process, since a greater current, that is, a large transconductance gm of the RF MOSFET is required, the gate width thereof must be enlarged.
A prior art method for manufacturing a conventional RF semiconductor device will now be described with reference to the accompanying drawings. FIG. 1 shows a top plan view of a conventional RF semiconductor device. FIGS. 2A and 2B are cross-sectional views of the conventional RF semiconductor device taken along lines X-X′ and Y-Y′ shown in FIG. 1, respectively.
Referring to FIG. 1, a gate line 15 is formed on an active region 10 in a longitudinally elongated zigzag shape. A plurality of contact holes 19 are formed between the zigzags of the gate line 15. The contact holes are formed at a constant distance from one another. A portion of the gate line 15, as shown in FIG. 1, is formed over an inactive region, i.e., an element isolation region. Some of the contact holes 19 are also formed on the gate line 15 within the element isolation region.
As shown in FIG. 2A, a trench 13 is formed in a semiconductor substrate 11 and then the gate line 15 is formed on the semiconductor substrate 11. Next, an insulating layer 17 is formed on the semiconductor substrate 11 having the gate line 15 thereon. The insulating layer 17 is then selectively patterned to thereby form the contact holes 19 which expose the semiconductor substrate 11 and the gate line 15. Next, a first conductive material is deposited on the insulating layer 17 and in the contact holes 19. The first conductive material is then planarized to thereby form contact plugs 21.
Next, a second conductive material is deposited on the insulating layer 17 and the contact plugs 21. The second conductive material is then selectively patterned to thereby form a conductive pattern 23 in contact with the contact plugs 21.
Meanwhile, as shown in FIG. 2B, the gate line 15 is also formed over the trench 13 beyond the active region 10.
Most conventional RF MOSFETs employ a gate having a large width. In such a case, a fringe of the gate line 15 is extended for contact to the element isolation region as shown in FIGS. 1 and 2A.
Also, in the above construction, since the trench 13 and the gate line 15 are overlapped with each other in a plurality of places, the parasitic capacitance Cgb between the gate line 15 and the trench 13 is increased as indicated at C in FIGS. 2A and 2B.
Because the operating frequency Ft, which is one of the important parameters of the RF MOSFET, has a functional relationship with the parasitic capacitance Cgb, an increase in the parasitic capacitance Cgb can adversely affect the operating frequency Ft. Specifically, if several (e.g., dozens) of gate fingers are used in order to enlarge the width of the gate line 15, the parasitic capacitance Cgb will be further increased.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a top plan view of a conventional RF semiconductor device.

FIGS. 2A and 2B are cross-sectional views of the conventional RF semiconductor device of FIG. 1 taken along lines X-X′ and Y-Y′, respectively.

FIG. 3 is a top plan view of an example RF semiconductor device.

FIGS. 4A and 4B are cross-sectional views of the RF semiconductor device of FIG. 3 taken along lines X-X′ and Y-Y′, respectively

DETAILED DESCRIPTION

Hereinafter, an example method for fabricating an RF semiconductor device will be described with reference to the accompanying drawings. FIG. 3 is a top plan view of an example RF semiconductor device. FIGS. 4A and 4B are cross-sectional views of the example RF semiconductor device of FIG. 3 taken along lines X-X′ and Y-Y′, respectively.
Referring to FIG. 3, a plurality of gate lines 35 which are elongated along a longitudinal direction are arranged on an active region 30 of a semiconductor substrate 31. A substantially constant distance is maintained between the gate lines 35. A plurality of contact holes 39 are formed between and on the gate lines 35 as shown in FIG. 3. A substantially constant distance is maintained between the contact holes 39. Specifically, the plurality of contact holes 39 are only formed within the active region 30.
As shown in FIG. 4A, a trench 33 is formed in the semiconductor substrate 31 and then the gate lines 35 are formed on the semiconductor substrate 31. However unlike the conventional gate lines 15 discussed above, the gate lines 35 are not formed to run along a longitudinal axis of the trench 33 as indicated at B of FIG. 4A.
Next, an insulating layer 37 is formed on the semiconductor substrate 31 having the gate lines 35 thereon. The insulating layer 37 is then selectively patterned to thereby form the contact holes 39 which expose the semiconductor substrate 31 and the gate line 35. At this time, the contact holes 39 are only formed within the active region 30.
A first conductive material is then deposited on the insulating layer 37 and in the contact holes 39. The first conductive material is then planarized to thereby form contact plugs 41.
Next, a second conductive material is deposited on the insulating layer 37 and the contact plugs 41. The second conductive material is then selectively patterned to thereby form a conductive pattern 43 contacting the contact plugs 41. As a result, some of the contact holes 39 are formed on the gate lines 35. As mentioned, the gate lines 35 are only formed within the active region 30. The contact holes 39 are filled with the first conductive material and are electrically connected with the conductive pattern 43. The thickness of the insulating layer is formed from about 1000 to about 20000 angstroms. The thickness of the conductive pattern layer 43 is formed to be over 10000 angstroms to maximize efficiency. The insulating layer 37 is oxide formed at low temperature, or a polyimide film.
As described above, the conventional fringe portion of the gate lines 15 which are extended from the active region 10 to the isolation region are removed. Since a gate line finger has one removed fringe portion, if N gate fingers are used, the parasitic capacitance Cgb is decreased by as much as N times relative to the conventional RF MOSFET.
Since the gate lines 35 are not substantially overlapped with the trench(es) 33, the parasitic capacitance between the gate lines 35 and the semiconductor substrate 31 is decreased and the resistance of the gate lines 35 is decreased as well to thereby improve the operating frequency Ft of the semiconductor device.
From the foregoing, persons of ordinary skill in the art will appreciate that methods for fabricating RF semiconductor devices having decreased parasitic capacitance and gate resistance have been disclosed. In a disclosed method, a trench for defining an active region and an element isolation region is formed in a semiconductor substrate. One or more gate lines are formed within the active region in the semiconductor substrate. The gate line(s) do not substantially overlap with the trench. An insulating layer is formed on the semiconductor substrate. A contact hole is formed in the insulating layer. A contact plug is formed in the contact hole. A conductive pattern is then formed that is electrically connected with the contact plug.
Although certain example methods and apparatus have been described herein, the scope of coverage of this patent is not limited thereto. On the contrary, this patent covers all methods, apparatus and articles of manufacture fairly falling within the scope of the appended claims either literally or under the doctrine of equivalents.

Claims

1. A RF semiconductor device comprising:

a substrate;

first and second trenches defining an active region and at least one isolation region in the substrate, the first and second trenches being located on opposite sides of the active region, each of the first and second trenches having a longitudinal axis; and

a plurality of gate lines formed in the active region and oriented substantially perpendicularly to the longitudinal axes of the first and second trenches, wherein the gate lines do not extend along the longitudinal axes of the first and second trenches.

2. The RF semiconductor device of claim 1, further comprising an insulating layer disposed on the plurality of gate lines and the substrate.

3. The RF semiconductor device of claim 1, wherein the plurality of gate lines are not connected with each other in the isolation region.

4. The RF semiconductor device of claim 1, wherein at least two of the plurality of gate lines are connected in the active region.

5. The RF semiconductor device of claim 1, wherein adjacent gate lines are formed at a substantially constant distance along their lengths.

6. The RF semiconductor device of claim 2, wherein a thickness of the insulating layer is about 1000 to about 20000 angstroms.

7. The RF semiconductor device of claim 2, wherein the insulating layer comprises an oxide or a polyimide.

8. The RF semiconductor device of claim 2, further comprising contact plugs disposed in the insulating layer over the active region.

9. The RF semiconductor device of claim 8, further comprising a conductive pattern layer disposed on the insulating layer and the contact plug, wherein the conductive pattern is electrically connected with the contact plugs.

10. The RF semiconductor device of claim 9, wherein a thickness of the conductive pattern layer is above 1000 angstroms.

11. A RF semiconductor device comprising:

a substrate;

first and second trenches defining an active region and at least one isolating region in the substrate, the first and second trenches being located on opposite sides of the active region; and

at least two gate lines extending across the active region from the first trench to the second trench without passing above a center of either of the first and second trenches.

12. The RF semiconductor device of claim 11, further comprising an insulating layer disposed on said at least two gate lines and the substrate.

13. The RF semiconductor device of claim 11, wherein said at least two gate lines do not extend longitudinally along a longitudinal axis of the trench.

14. The RF semiconductor device of claim 11, wherein said at least two gate lines are not connected with each other in the isolation region.

15. The RF semiconductor device of claim 11, wherein said at least two gate lines are connected in the active region.

16. The RF semiconductor device of claim 12, wherein a thickness of the insulating layer is about 1000 to about 20000 angstroms.

17. The RF semiconductor device of claim 12, wherein the insulating layer comprises an oxide or a polyimide

18. The RF semiconductor device of claim 12, further comprising contact plugs in each of contact holes,

wherein the contact holes are disposed in the insulating layer over the active region, and

wherein a first group of the contact holes exposes portions of said at least two gate lines and a second group of the contract holes exposes portion of the substrate in the active region.

19. The RF semiconductor device of claim 13, wherein said at least two gate lines do not extend horizontally along the longitudinal axis of the trench.

20. The RF semiconductor device of claim 18, further comprising a conductive pattern layer disposed on the insulating layer and the contact plug, wherein the conductive pattern is electrically connected with the contact plugs.