US20080090095A1 - Adhesiveless Copper Clad Laminates And Method For Manufacturing Thereof - Google Patents
Adhesiveless Copper Clad Laminates And Method For Manufacturing Thereof Download PDFInfo
- Publication number
- US20080090095A1 US20080090095A1 US11/661,308 US66130805A US2008090095A1 US 20080090095 A1 US20080090095 A1 US 20080090095A1 US 66130805 A US66130805 A US 66130805A US 2008090095 A1 US2008090095 A1 US 2008090095A1
- Authority
- US
- United States
- Prior art keywords
- film
- base metal
- metal layer
- layer
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 186
- 239000010949 copper Substances 0.000 title claims abstract description 180
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 176
- 238000000034 method Methods 0.000 title claims abstract description 105
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- 239000010953 base metal Substances 0.000 claims abstract description 127
- 238000007747 plating Methods 0.000 claims abstract description 66
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000000853 adhesive Substances 0.000 claims abstract description 24
- 230000001070 adhesive effect Effects 0.000 claims abstract description 24
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 23
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910000990 Ni alloy Inorganic materials 0.000 claims abstract description 19
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 19
- 239000011733 molybdenum Substances 0.000 claims abstract description 19
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims description 39
- 229920001721 polyimide Polymers 0.000 claims description 11
- -1 polytetrafluoroethylene Polymers 0.000 claims description 11
- 239000004642 Polyimide Substances 0.000 claims description 8
- 229920002647 polyamide Polymers 0.000 claims description 6
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 4
- 239000004734 Polyphenylene sulfide Substances 0.000 claims description 4
- 238000007733 ion plating Methods 0.000 claims description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 claims description 4
- 229920000728 polyester Polymers 0.000 claims description 4
- 239000011112 polyethylene naphthalate Substances 0.000 claims description 4
- 229920000069 polyphenylene sulfide Polymers 0.000 claims description 4
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 4
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 238000001771 vacuum deposition Methods 0.000 claims description 4
- 230000007797 corrosion Effects 0.000 abstract description 33
- 238000005260 corrosion Methods 0.000 abstract description 33
- 238000009413 insulation Methods 0.000 abstract description 29
- 230000007547 defect Effects 0.000 abstract description 9
- 230000008569 process Effects 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 253
- 239000010410 layer Substances 0.000 description 201
- 238000012360 testing method Methods 0.000 description 68
- 238000005530 etching Methods 0.000 description 42
- 229910017318 Mo—Ni Inorganic materials 0.000 description 37
- 238000011156 evaluation Methods 0.000 description 37
- 239000000758 substrate Substances 0.000 description 36
- 230000008859 change Effects 0.000 description 34
- 229910045601 alloy Inorganic materials 0.000 description 33
- 239000000956 alloy Substances 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 32
- 239000002184 metal Substances 0.000 description 32
- 239000000463 material Substances 0.000 description 27
- 238000002845 discoloration Methods 0.000 description 24
- 244000126211 Hericium coralloides Species 0.000 description 20
- 239000004020 conductor Substances 0.000 description 20
- 230000006866 deterioration Effects 0.000 description 18
- 230000005540 biological transmission Effects 0.000 description 15
- 238000012545 processing Methods 0.000 description 15
- 230000000052 comparative effect Effects 0.000 description 14
- 239000011889 copper foil Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- 239000000654 additive Substances 0.000 description 5
- 238000009713 electroplating Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 5
- 239000011247 coating layer Substances 0.000 description 4
- 239000002131 composite material Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052748 manganese Inorganic materials 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- NPHULPIAPWNOOH-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-(2,3-dihydroindol-1-ylmethyl)pyrazol-1-yl]-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C(=NN(C=1)CC(=O)N1CC2=C(CC1)NN=N2)CN1CCC2=CC=CC=C12 NPHULPIAPWNOOH-UHFFFAOYSA-N 0.000 description 1
- HVTQDSGGHBWVTR-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-3-phenylmethoxypyrazol-1-yl]-1-morpholin-4-ylethanone Chemical compound C(C1=CC=CC=C1)OC1=NN(C=C1C=1C=NC(=NC=1)NC1CC2=CC=CC=C2C1)CC(=O)N1CCOCC1 HVTQDSGGHBWVTR-UHFFFAOYSA-N 0.000 description 1
- APLNAFMUEHKRLM-UHFFFAOYSA-N 2-[5-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]-1,3,4-oxadiazol-2-yl]-1-(3,4,6,7-tetrahydroimidazo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C1=NN=C(O1)CC(=O)N1CC2=C(CC1)N=CN2 APLNAFMUEHKRLM-UHFFFAOYSA-N 0.000 description 1
- 229920006105 Aramica® Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- MKYBYDHXWVHEJW-UHFFFAOYSA-N N-[1-oxo-1-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propan-2-yl]-2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidine-5-carboxamide Chemical compound O=C(C(C)NC(=O)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F)N1CC2=C(CC1)NN=N2 MKYBYDHXWVHEJW-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 239000004760 aramid Substances 0.000 description 1
- 229920003235 aromatic polyamide Polymers 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000012789 electroconductive film Substances 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 229910001026 inconel Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 239000012779 reinforcing material Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/20—Metallic material, boron or silicon on organic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/023—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material only coatings of metal elements only
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/388—Improvement of the adhesion between the insulating substrate and the metal by the use of a metallic or inorganic thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0393—Flexible materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12556—Organic component
- Y10T428/12569—Synthetic resin
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12806—Refractory [Group IVB, VB, or VIB] metal-base component
- Y10T428/12826—Group VIB metal-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12903—Cu-base component
- Y10T428/1291—Next to Co-, Cu-, or Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12944—Ni-base component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
- Y10T428/2495—Thickness [relative or absolute]
- Y10T428/24967—Absolute thicknesses specified
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
- Y10T428/31681—Next to polyester, polyamide or polyimide [e.g., alkyd, glue, or nylon, etc.]
Definitions
- the present invention relates to adhesiveless copper clad laminates and a method for manufacturing thereof, and more particularly to adhesiveless copper clad laminates in which a nickel-chrome-molybdenum base metal layer (a seed layer) is formed on an insulating film by a dry plating method and a copper film layer is then formed on the base metal layer, and which has high adhesion and corrosion resistance, and has the copper film layer with high insulation reliability, and to a method for manufacturing thereof.
- a nickel-chrome-molybdenum base metal layer a seed layer
- a copper film layer is then formed on the base metal layer, and which has high adhesion and corrosion resistance, and has the copper film layer with high insulation reliability
- substrates used to manufacture flexible wiring substrates are roughly divided into adhesive copper clad laminates in which a copper foil serving as a conductor layer is bonded together on an insulating film by using an adhesive (see, e.g., Patent Document 1), and adhesiveless copper clad laminates in which a copper film layer serving as a conductor layer is directly formed on the insulating film by a dry plating method or a wet plating method without using an adhesive in between.
- an adhesive flexible wiring substrate when using the adhesive copper clad laminates an adhesive flexible wiring substrate can be manufactured by forming a desired wiring pattern on a substrate by a subtractive method and, when using the adhesiveless copper clad laminates, an adhesiveless flexible wiring substrate can be manufactured by forming a desired wiring pattern on a substrate by a subtractive method or an additive method, but use of the adhesive copper clad laminates that can be manufactured by a simple manufacturing method at low cost forms a mainstream in a conventional technology.
- a wiring pitch width becomes too wide, and hence there is a limit in narrowing a pitch of the wiring portion on a wiring substrate as long as adhesive copper clad laminates in which a generally conventionally used copper foil having a thickness of 35 ⁇ m is bonded to an insulating film through an adhesive is utilized.
- a thin copper foil bonded substrate having a thickness not greater than 18 ⁇ m is used in place of the conventional copper foil bonded substrate having a thickness of 35 ⁇ m so that a width of a shape spreading toward the bottom obtained by side etching is reduced to narrow a pitch of the wiring portion on the wiring substrate.
- such a thin copper foil has a problem in a manufacturing technology, e.g., an increase in film defects due to unevenness in film thickness or occurrence of pin holes or cracks, the copper foil itself becomes difficult to be manufactured as a thickness of the copper foil is reduced, and a manufacturing price is increased, thereby losing cost merits of the adhesive flexible wiring substrate.
- a copper conductor layer is directly formed on an insulating film without using an adhesive, a thickness of the substrate itself can be thereby reduced, and there is an advantage that a thickness of the copper conductor film to be applied can be adjusted to an arbitrary thickness.
- an electrolytic copper plating method is usually adopted as means for forming a copper conductor layer having a uniform thickness on an insulating film, but it is general to form a base metal layer on the insulating film to which the electrolytic copper plating film is applied to provide electroconductivity on the entire surface and then perform electrolytic copper plating processing (see, e.g., Patent Document 2).
- a dry plating method e.g., a vacuum deposition method or an ion plating method to obtain the base metal layer on the insulating film
- many pin holes having a size of several-ten ⁇ m to several-hundred ⁇ m are produced in the film layer obtained by such a dry plating method, and hence an insulating film exposed portion due to the pin holes are often generated in the base metal layer.
- a range of 35 ⁇ m to 50 ⁇ m is appropriate as a thickness of a copper electroconductive film required for a wiring line in this type of flexible wiring substrate, but a width of the wiring line is also approximately several-hundred ⁇ m, a defect in the wiring portion due to presence of pin holes having a size of several-ten ⁇ m rarely occurs.
- a thickness of a copper film required to form a wiring portion is not greater than 18 ⁇ m or, preferably, not greater than 8 ⁇ m or, ideally, approximately 5 ⁇ m as described above, and a possibility of occurrence of a defect in the wiring portion is increased.
- a resist layer having a desired wiring portion pattern by which a wiring portion alone is masked and a copper conductor layer of a non-wiring portion is exposed is provided on the copper conductor layer; (2) the exposed copper conductor layer is removed by chemical etching processing; and (3) the resist layer is peeled and removed at last.
- a size of bulky ones of pin holes produced in a base metal layer of the substrate by the dry plating processing reaches an order of several-ten ⁇ m to several-hundred ⁇ m, and hence an insulating film exposed part due to the pin holes cannot be sufficiently filled when an electrolytic copper plating film having a thickness of approximately 5 ⁇ m is formed, whereby this exposed part, i.e., a defective part of the conductor layer reaches the wiring portion and the wiring portion gets chipped at positions of the pin holes to become a wiring defect, or even if not so, an adhesion failure of the wiring portion is led.
- Patent Document 4 proposes a non-adhesive flexible laminate including a polymer film having a plasma-processed surface, a nickel tie coating layer containing nickel or a nickel alloy that has adhered to the plasma-processed surface, a copper coating layer that has adhered to the nickel layer, and another copper layer that has adhered to the copper coating layer, and discloses the nickel tie coating layer whose metal for a nickel alloy is selected from a group including Cu, Cr, Fe, V, Ti, Al, Si, Pd, Ta, W, Zn, In, Sn, Mn, Co, and two or more mixtures of these metals.
- Ni alloys there are Monel (approximately 67% Ni, and 30% Cu), Inconel (Approximately 76% Ni, 16% Cr, and 8% Fe) and others. This document explains that the obtained laminated film is superior in initial peel strength, peel strength after solder floating, and peel strength after a heat cycle, but does not describe about excellence in properties of a composite metal film.
- Patent Document 5 discloses that a first thin layer formed of at least one type of metal selected from a group including nickel, chrome, molybdenum, tungsten, vanadium, titanium, and manganese is formed on a polyimide side by a vacuum film forming method, a second thin layer with a predetermined thickness made of copper is formed thereon by the vacuum film forming method, and a third thin layer with a predetermined thickness made of copper is formed on the second thin layer by electroplating with a predetermined current density in order to improve heat-resisting adhesiveness of a polyamide/metal interface on a polyimide side of a copper-clad polyimide film provided by applying and hardening a polyimide varnish on a copper foil and improve productivity of this composite base material and durability and reliability of a final electrical product, but chrome alone is described as the first thin layer in an embodiment thereof, excellence in properties of a composite metal film is not explained.
- Patent Document 6 also discloses provision of a flexible printed wiring substrate by superimposing on one side or both sides of a plastic film a laminated body constituted of an evaporated layer of nickel, cobalt, chrome, palladium, titanium, zirconium, molybdenum, or tungsten and an electron beam heating evaporated copper layer that is superimposed on the evaporated layer, made of an aggregation of evaporated particles whose diameter falls in a range of 0.007 to 0.850 ⁇ m, and has a desired circuit formed thereon, and a mask layer that has no circuit formed thereon and is constituted of a mask layer made of an insulative organic material in order to provide a reliable inexpensive flexible printed wiring substrate superior in interlayer adhesion, heat resistance, chemical resistance, flexibility, and electrical characteristics, but a chrome evaporated layer alone is described in an embodiment of this document, and excellence in characteristics of a composite metal film is not explained at all.
- Patent Document 1 Japanese Examined Patent Application Publication No. 1994-132628
- Patent Document 2 Japanese Examined Patent Application Publication No. 1996-139448
- Patent Document 3 Japanese Examined Patent Application Publication No. 1998-195668
- Patent Document 4 PCT National Publication No. 2000-508265
- Patent Document 5 Japanese Examined Patent Application Publication No. 1995-197239
- Patent Document 6 Japanese Examined Patent Application Publication No. 1993-283848
- the present inventors uses adhesiveless copper clad laminates that has a base metal layer formed on the insulating film by a dry plating method and a copper film layer formed on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm and mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel, and the present inventors can thereby obtain adhesiveless copper clad laminates that can solve the problems, has excellent adhesion and corrosion resistance, and has a copper conductor layer having high insulation reliability, and revealed that the adhesiveless copper clad laminates can be also applied to a flexible wiring substrate having a wiring portion with a narrow width and a narrow pitch, thus
- a first aspect of the present invention provides adhesiveless copper clad laminates in which a base metal layer is directly formed on at least one plane of an insulating film without using an adhesive in between and a copper film layer is then formed on the base metal layer, wherein the base metal layer is constituted of a base metal layer having a film thickness of 3 to 50 num that is formed by a dry plating method and mainly contains a chrome-molybdenum-nickel alloy wherein a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- a second aspect of the present invention provides the adhesiveless copper clad laminates defined in the first invention, wherein the copper film layer formed on the base metal layer has a film thickness of 10 nm to 35 ⁇ m.
- a third aspect of the present invention provides the adhesiveless copper clad laminates defined in the first aspect of the present invention, wherein the insulating film is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film.
- the insulating film is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film.
- a fourth aspect of the present invention provides a method for manufacturing adhesiveless copper clad laminates in which a base metal layer is directly formed on at least one plane of an insulating film without using an adhesive in between and a copper film layer is then formed on the base metal layer, the method comprising: forming the base metal layer having a film thickness of 3 to 50 nm on the insulating film by a dry plating method, the base metal layer mainly containing a chrome-molybdenum-nickel alloy wherein a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel; and forming the copper film layer on the base metal layer.
- a fifth aspect of the present invention provides the method for manufacturing adhesiveless copper clad laminates defined in the fourth aspect of the present invention, wherein the copper film layer is formed by the dry plating method, and then a copper film layer is further formed on the copper film layer by a wet plating method.
- a sixth aspect of the present invention provides the method for manufacturing adhesiveless copper clad laminates defined in the fourth and fifth aspects of the present invention, wherein the dry plating method is one of a vacuum deposition method, a sputtering method, and an ion plating method.
- the adhesiveless copper clad laminates of the present invention in adhesiveless copper clad laminates provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between and then by forming a copper film layer on the base metal, it is possible to obtain the adhesiveless copper clad laminates characterized by having the base metal layer with a film thickness of 3 to 50 nm formed on the insulating film by a dry plating method and the copper film layer with a film thickness of 10 nm to 35 ⁇ m formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- the adhesiveless copper clad laminates of the present invention a reduction in heat-resisting peel strength can be avoided since the base metal layer contains chrome, corrosion resistance and insulation reliability can be improved since the base metal layer contains molybdenum, and hence using the adhesiveless copper clad laminates can efficiently obtain a flexible wiring substrate that has excellent adhesion and corrosion resistance and has a defect-free reliable wiring portion with a narrow width and a narrow pitch, whereby an effect of the adhesiveless copper clad laminates is extremely large.
- adhesiveless copper clad laminates is adhesiveless copper clad laminates provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between and forming a copper conductor layer with a desired thickness on the base metal layer, and is characterized in that the base metal layer having a film thickness of 3 to 50 nm is formed on the insulating film by a dry plating method and a copper film layer is formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- Adopting the above-described structure can obtain the adhesiveless copper clad laminates that has excellent adhesion and corrosion resistance and has a copper conductor layer with high insulation reliability formed thereon.
- a film thickness of the base metal layer mainly containing the chrome-molybdenum-nickel alloy obtained by the dry plating method a range of 3 to 50 nm is preferable.
- the film thickness is smaller than 3 nm, a problem of, e.g., a considerable reduction in wiring peel strength occurs because an etchant used when performing wiring processing infiltrates to thereby raise a wiring portion, and hence this film thickness is not preferable.
- the film thickness exceeds 50 nm effecting etching is difficult, and hence this film thickness is not preferable.
- the chrome ratio must be 4 to 22 weight %
- the molybdenum ratio must be 5 to 40 weight %
- the balance must be nickel.
- the chrome ratio must be 4 to 22 weight % in order to prevent heat-resisting peel strength from being considerably lowered due to heat deterioration.
- the chrome ratio becomes lower than 4 weight %, a considerable reduction in heat-resisting peel strength due to heat deterioration cannot be avoided, and hence this is not preferable.
- the chrome ratio exceeds 22 weight %, performing etching is difficult, which is not preferable.
- a preferable ratio is 4 to 15 weight %, and a particularly preferable ratio is 5 to 12 weight %.
- the molybdenum ratio must be 5 to 40 weight % in order to improve corrosion resistance and insulation reliability.
- the molybdenum ratio is less than 5 weight %, an addition effect is not demonstrated, and corrosion resistance and insulation reliability cannot be improved, which is not preferable.
- the molybdenum ratio exceeds 40 weight %, heat-resisting peel strength tends to be extremely decreased, which is not preferable.
- a nickel ratio exceeds 93% a sputtering target itself serves as a ferromagnetic substance, and a film formation rate is lowered when the film is formed by magnetron sputtering, which is not preferable.
- a nickel amount is equal to or smaller than 93%, an excellent film formation rate can be obtained even if the film is formed by using the magnetron sputtering method.
- a transition metal element can be appropriately added to the chrome-molybdenum-nickel alloy in accordance with intended characteristics in order to improve heat resistance or corrosion resistance.
- an unavoidable impurity which is contained by, e.g., import during manufacture of a target and whose ratio is not greater than one weight % is present in the base metal layer.
- a film thickness of the copper film layer including both the copper film layer formed on the base metal layer by the dry plating method and the copper film layer superimposed and formed on the copper film layer by the wet plating method is 10 nm to 35 ⁇ m.
- this film thickness is smaller than 10 nm, the copper film layer formed by the wet plating method becomes thin, and hence power feeding becomes difficult in a subsequent wet plating process, which is not preferable. Further, when this film thickness exceeds 35 ⁇ m, productivity is lowered, which is not preferable.
- the adhesiveless copper clad laminates although there is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film as the insulating film, the polyimide-based film and the polyamide-based film are preferable in that they are suitable for an application requiring high-temperature connection, e.g., solder reflow.
- the film one having a film thickness of 8 to 75 ⁇ m can be preferably used. It is to be noted that an inorganic material, e.g., glass fiber can be appropriately added.
- the dry plating method it is possible to use one of a vacuum deposition method, a sputtering method, and an ion plating method.
- forming the copper layer by the dry plating method and then superimposing and forming the copper film layer on the copper film layer by the wet plating method is suitable for forming a relatively thick film.
- the base metal layer is directly formed on at least one plane of the insulating film as a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film without using an adhesive in between, and the copper conductor layer having a desired thickness is formed on the base metal layer.
- a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film without using an adhesive in between, and the copper conductor layer having a desired thickness is formed on the base metal layer.
- the film usually contains moisture, and atmospheric drying and/or vacuum drying must be carried out to remove the moisture present in the film before forming the base metal layer mainly containing the chrome-molybdenum-nickel alloy by the dry plating method. If this removal is insufficient, adhesion with respect to the base metal layer is deteriorated.
- an alloy target having a composition of the base metal layer is attached to a sputtering cathode.
- a nickel-chrome alloy target and a molybdenum target can be attached to two cathodes to be simultaneously sputtered, and an input power of each cathode can be controlled to obtain the base metal layer having a desired film composition.
- the sputtering device having the film set therein is evacuated to form a vacuum therein, an Ar gas is introduced, the inside of the device is maintained at approximately 1.3 Pa, and an electric power is supplied from a sputtering direct-current power supply connected with the cathode to start sputtering discharge while carrying the insulating film disposed to a reeling/unreeling roll in the device at a speed of approximately 3 m/minute, thereby continuously forming the metal layer mainly containing the chrome-molybdenum-nickel alloy on the film.
- This film formation allows the base metal film with a desired film thickness mainly containing the chrome-molybdenum-nickel alloy to be formed on the film.
- the sputtering device in which a copper target is attached to the sputtering cathode can be used to form the copper film layer by the dry plating method. At this time, it is preferable to continuously form the base metal layer and the copper film layer in the same vacuum chamber.
- the electroless copper plating processing is carried out as the primary plating because a rough and large pin hole may be formed and an exposed part may be thereby formed on a surface of the insulating film when dry plating is performed based on vapor deposition, and hence an electroless-copper-plated film layer is formed on the entire substrate surface to cover the film exposed surface in order to form an excellent conductor on the entire substrate surface to avoid an influence of the pin hole.
- any reducing deposition type liquid in which a metal ion contained therein has autocatalytic properties and is reduced by a reducer e.g., hydrazine, phosphinic acid sodium, or formalin to be subjected metal deposition
- a reducer e.g., hydrazine, phosphinic acid sodium, or formalin to be subjected metal deposition
- the present invention has a purpose of realizing an excellent conductor at the exposed part of insulating film caused due to a pin hole generated in the base metal layer, and hence an electroless copper plating liquid having excellent electroconductivity and relatively good workability is optimum.
- a thickness of the copper-plated film layer provided by the electroless copper plating processing as the primary plating a thickness that allows a defect due to a pin hole on the substrate surface to be remedied and prevents dissolution by the electrolytic copper plating liquid when performing the electrolytic copper plating processing as the later-described secondary plating can suffice, and it is preferable for this thickness to fall within a range of 0.01 to 1.0 ⁇ m.
- the electrolytic copper plating processing as the secondary plating is performed on the electroless-copper-plated film layer in order to form the copper conductor layer with a desired thickness.
- the adhesiveless copper clad laminates that is not affected by large and small various pin holes generated in formation of the base metal layer and has excellent adhesion of the conductor layer.
- a total thickness of the copper film layers formed on the base metal layer by the wet/dry plating methods in this manner must be set to equal to or below 35 ⁇ m at maximum.
- the above-described adhesiveless copper clad laminates according to the present invention is used to individually form a wiring pattern on at least one plane of the adhesiveless copper clad laminates. Furthermore, a via hole for interlayer connection can be formed at a predetermined position to be used in various applications.
- a high-density wiring pattern is individually formed on at least one plane of a flexible sheet.
- a via hole piercing the wiring layer and the flexible sheet is formed in the flexible sheet having the wiring layer formed thereon.
- An electroconductive material is filled in the via hole to provide electroconductivity in the hole in some cases.
- a method for forming the wiring pattern it is possible to use a conventionally known method, e.g., photo-etching by which adhesiveless copper clad laminates having a copper film layer formed on at least one plane thereof is prepared, screen printing or a dry film is laminated on the copper to form a photosensitive resist film, and then exposure development is carried out to perform patterning, for example. Subsequently, the metal foil is selectively etched by using an etchant, e.g., a ferric chloride solution, and then the resist is removed to form a predetermined wiring pattern.
- an etchant e.g., a ferric chloride solution
- a conventionally known method can be used, and the via hole piercing the wiring patter and the flexible sheet is formed at a predetermined position on the wiring pattern by, e.g., laser processing or photo-etching. It is preferable to reduce a diameter of the via hole so that provision of electroconductivity in the hole is not obstructed, and the diameter is usually set to 100 ⁇ m or below or, preferably 50 ⁇ m or below.
- An electroconductive metal e.g., copper is filled in the via hole by plating, vapor deposition, or sputtering, or a mask having a predetermined opening pattern is used to press fit an electroconductive paste in the via hole, and the electroconductive metal or paste is dried to provide electroconductivity in the hole, thus electrically connecting the layers with each other.
- the electroconductive metal there is copper, gold, nickel, or the like.
- peel strength As a method for measuring peel strength, a method conforming to IPC-TM-650, NUMBER 2.4.9 was used. However, a lead width was determined as 1 mm, and an angle of peeling was determined as 90°. A lead was formed by a subtractive method or a semi-additive method. Further, as an index of heat resistance, a film base material having a lead of 1 mm formed thereon was left in an oven at 150° C. for 168 hours, taken out from the oven, and left until a room temperature is reached, and peel strength at 90° was evaluated.
- Etching properties were basically confirmed by using a microscope to observe the test piece. Furthermore, an insulating resistance value of a test piece of HHBT was also measured and, and it was determined that an etching residue is present between the leads and etching properties are poor in case of a resistance value that is not greater than 10 ⁇ 6 ⁇ .
- HHBT High Temperature High Humidity Bias Test
- the test piece is used, and DC 40 V is applied between thermals in an RH environment of 85° C. and 85% based on JPCA-ET04 to observe a 1000 hr resistance.
- a short-circuit defect was determined when the resistance was reduced to 10 6 ⁇ or below, and a success in the test was determined when the resistance was not lower than 10 6 ⁇ even after elapse of 1000 hours.
- a polyimide film (a product name: “Kapton 150EN” manufactured by Du Pont-Toray Co., Ltd.) having a thickness of 38 ⁇ m was cut out with a size of 12 cm ⁇ 12 cm, a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd) was used as a first layer of a base metal layer on one plane of the polyimide film, and a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 20 weight % was formed by a direct-current sputtering method.
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 22 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 22 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 5 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 5 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 40 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 40 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 15 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 15 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 6 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 6 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 6 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 12 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 12 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 12 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a shorter time to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a longer time to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1.
- a copper film layer with a thickness of 1 ⁇ m was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.), and a film was formed by electroplating up to 8 ⁇ m to provide a raw base material for evaluation.
- a lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 ⁇ m pitch for the HHBT were formed from this base material by the subtracting method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1.
- a copper film layer was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.) up to 8 ⁇ m to provide a raw base material for evaluation.
- a lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 ⁇ m pitch for the HHBT were formed from this base material by the subtracting method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1.
- a copper film layer was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.) up to 500 nm, and a lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 ⁇ m pitch for the HHBT were formed from this base material by the semi-additive method while increasing a thickness up to 8 ⁇ m.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base material for evaluation was obtained like Example 1 except that an aromatic polyamide film (a product name: “Aramica 120RC” manufactured by Teijin Advanced Films Limited) having a thickness of 12 ⁇ m was used as a film.
- an aromatic polyamide film a product name: “Aramica 120RC” manufactured by Teijin Advanced Films Limited
- a film thickness of a part of the film formed under the same conditions was separately measured, it was 20 nm.
- a lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 ⁇ m pitch for the HHBT were formed from this base material by the subtracting method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 3 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 3 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 24 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 24 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- the insulation reliability test was to be conducted with respect to three samples, but the base metal layer was not able to be etched by salt iron etching and a lead having a 30 ⁇ m pitch failed to be formed in the two samples. Moreover, no change was observed on a rear surface of the film in the corrosion resistance test (discoloration on the rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 4 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 4 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but a resistance was reduced to 10 6 ⁇ or below to result in a short-circuit failure in the two samples. On the other hand, all the samples had excellent etching properties. Additionally, discoloration was observed at many positions on a rear surface of the film in the corrosion resistance test (discoloration on the rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 44 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 44 weight % by the direct-current sputtering method.
- the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a shorter time to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the insulation reliability test was conducted with respect to three samples, but a resistance was reduced to 10 6 ⁇ or below to result in a short-circuit failure in all the samples. On the other hand, all the samples had excellent etching properties. Additionally, discoloration was observed at many positions on a rear surface of the film in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- a raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a longer time than that in Example 9 to vary a film thickness.
- a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % manufactured by Sumitomo Metal Mining Co., Ltd.
- the base metal layer was not able to be formed by salt iron etching and a lead having a 30 ⁇ m pitch failed to be formed in two of three samples.
- Table 1 collectively shows results of Examples and Comparative Examples.
- TABLE 1 Base metal Heat- layer Base metal Copper film Initial resisting composition layer film layer film peel peel Insulation Corrosion (weight %) thickness thickness strength strength Etching reliability resistance Cr Mo Ni (nm) ( ⁇ m) (N/m) (N/m) properties test test
- Example 1 4 20 bal. 20 8 640 510 Good Good Good Example 2 22 20 bal. 20 8 623 597 Good Good Good Example 3 4 5 bal. 20 8 631 505 Excellent Good Good Example 4 4 40 bal. 20 8 645 450 Excellent Good Good Example 5 15 20 bal. 20 8 620 575 Excellent Good Good Good Example 6 6 20 bal. 30 8 660 560 Good Good Good Example 7 12 20 bal. 5 8 620 590 Excellent Good Good Example 8 10 20 bal.
- the base metal layer having a film thickness of 3 to 50 nm can be formed on the insulating film by the dry plating method and a copper film layer having a film thickness of 10 nm to 35 ⁇ m can be formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel and, according to the adhesiveless copper clad laminates of the present invention, a reduction in heat-resisting peel strength can be avoided since chrome is contained in the base metal layer, corrosion resistance and insulation reliability can be improved since molybdenum is also contained,
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides adhesiveless copper clad laminates, which does not have defects on a copper film part due to a pin hole generated at the time of forming a base metal layer on an insulating film by dry plating process, has excellent adhesion between the insulating film and the base metal layer and corrosion resistance, and has a copper film layer having high insulation reliability, and provides a method for manufacturing such adhesiveless copper clad laminates. In adhesiveless copper clad laminates according to the present invention provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between, and then by forming a copper film layer on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm is formed by dry plating method and mainly contains a chrome-molybdenum-nickel alloy wherein the chrome ratio is 4 to 22 weight %, the molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
Description
- The present invention relates to adhesiveless copper clad laminates and a method for manufacturing thereof, and more particularly to adhesiveless copper clad laminates in which a nickel-chrome-molybdenum base metal layer (a seed layer) is formed on an insulating film by a dry plating method and a copper film layer is then formed on the base metal layer, and which has high adhesion and corrosion resistance, and has the copper film layer with high insulation reliability, and to a method for manufacturing thereof.
- In general, substrates used to manufacture flexible wiring substrates are roughly divided into adhesive copper clad laminates in which a copper foil serving as a conductor layer is bonded together on an insulating film by using an adhesive (see, e.g., Patent Document 1), and adhesiveless copper clad laminates in which a copper film layer serving as a conductor layer is directly formed on the insulating film by a dry plating method or a wet plating method without using an adhesive in between.
- Here, when using the adhesive copper clad laminates an adhesive flexible wiring substrate can be manufactured by forming a desired wiring pattern on a substrate by a subtractive method and, when using the adhesiveless copper clad laminates, an adhesiveless flexible wiring substrate can be manufactured by forming a desired wiring pattern on a substrate by a subtractive method or an additive method, but use of the adhesive copper clad laminates that can be manufactured by a simple manufacturing method at low cost forms a mainstream in a conventional technology.
- Meanwhile, with recent density growth of electronic devices, a wiring substrate whose wiring width pitch is also narrowed has been demanded.
- However, in manufacture of an adhesive copper clad laminates, when a wiring portion is formed on a copper film layer provided on an insulating film as a substrate by etching in accordance with a desired wiring pattern to manufacture a wiring substrate, so-called side etching that a side surface of the wiring portion is etched occurs, and hence a cross-sectional shape of the wiring portion tends to have a trapezoidal shape spreading toward the bottom.
- Therefore, when etching is carried out till electrical insulating properties are assured between wiring portions, a wiring pitch width becomes too wide, and hence there is a limit in narrowing a pitch of the wiring portion on a wiring substrate as long as adhesive copper clad laminates in which a generally conventionally used copper foil having a thickness of 35 μm is bonded to an insulating film through an adhesive is utilized.
- Therefore, a thin copper foil bonded substrate having a thickness not greater than 18 μm is used in place of the conventional copper foil bonded substrate having a thickness of 35 μm so that a width of a shape spreading toward the bottom obtained by side etching is reduced to narrow a pitch of the wiring portion on the wiring substrate.
- However, since such a thin-walled copper foil has small rigidity and poor handling properties, there is adopted a method of temporarily bonding a reinforcing material such as an aluminum carrier to the copper foil to increase the rigidity, then bonding the copper foil to the insulating film, and further removing the aluminum carrier, but this method takes trouble and time and has a problem of poor operability and productivity.
- Further, such a thin copper foil has a problem in a manufacturing technology, e.g., an increase in film defects due to unevenness in film thickness or occurrence of pin holes or cracks, the copper foil itself becomes difficult to be manufactured as a thickness of the copper foil is reduced, and a manufacturing price is increased, thereby losing cost merits of the adhesive flexible wiring substrate.
- In particular, a demand for a wiring substrate having a wiring portion with a narrow width and a narrow pitch that cannot be manufactured unless a copper foil having a thickness of ten-odd μm or below or approximately several μm is used has been recently increased, and a wiring substrate using adhesive copper clad laminates has the above-explained technical problem as well as a manufacturing cost problem.
- Thus, attention is paid to a double layer flexible wiring substrate using adhesiveless copper clad laminates in which a copper film layer can be directly formed on an insulating film without utilizing an adhesive in between.
- According to such adhesiveless copper clad laminates, a copper conductor layer is directly formed on an insulating film without using an adhesive, a thickness of the substrate itself can be thereby reduced, and there is an advantage that a thickness of the copper conductor film to be applied can be adjusted to an arbitrary thickness.
- Furthermore, when manufacturing such adhesiveless copper clad laminates, an electrolytic copper plating method is usually adopted as means for forming a copper conductor layer having a uniform thickness on an insulating film, but it is general to form a base metal layer on the insulating film to which the electrolytic copper plating film is applied to provide electroconductivity on the entire surface and then perform electrolytic copper plating processing (see, e.g., Patent Document 2).
- Meanwhile, although it is general to use a dry plating method, e.g., a vacuum deposition method or an ion plating method to obtain the base metal layer on the insulating film, many pin holes having a size of several-ten μm to several-hundred μm are produced in the film layer obtained by such a dry plating method, and hence an insulating film exposed portion due to the pin holes are often generated in the base metal layer.
- In a conventional technology, generally, it is said that a range of 35 μm to 50 μm is appropriate as a thickness of a copper electroconductive film required for a wiring line in this type of flexible wiring substrate, but a width of the wiring line is also approximately several-hundred μm, a defect in the wiring portion due to presence of pin holes having a size of several-ten μm rarely occurs.
- However, when obtaining a flexible wiring substrate having a wiring portion with a narrow width and a narrow pitch intended by the present invention, it is desirable to set a thickness of a copper film required to form a wiring portion to a very small thickness that is not greater than 18 μm or, preferably, not greater than 8 μm or, ideally, approximately 5 μm as described above, and a possibility of occurrence of a defect in the wiring portion is increased.
- Explaining this situation while taking manufacture of a flexible wiring substrate by, e.g., a subtractive method using adhesiveless copper clad laminates in which a copper film layer having a desired thickness on an insulating film having a base metal layer formed thereon as an example, formation of a wiring portion pattern is carried out at the following steps.
- (1) A resist layer having a desired wiring portion pattern by which a wiring portion alone is masked and a copper conductor layer of a non-wiring portion is exposed is provided on the copper conductor layer; (2) the exposed copper conductor layer is removed by chemical etching processing; and (3) the resist layer is peeled and removed at last.
- Therefore, in case of using a substrate on which a copper film layer having a very small thickness, e.g., 5 μm is formed to manufacture a wiring substrate having a narrow wiring width, e.g., 15 μm and a narrow wiring pitch, e.g., 30 μm, a size of bulky ones of pin holes produced in a base metal layer of the substrate by the dry plating processing reaches an order of several-ten μm to several-hundred μm, and hence an insulating film exposed part due to the pin holes cannot be sufficiently filled when an electrolytic copper plating film having a thickness of approximately 5 μm is formed, whereby this exposed part, i.e., a defective part of the conductor layer reaches the wiring portion and the wiring portion gets chipped at positions of the pin holes to become a wiring defect, or even if not so, an adhesion failure of the wiring portion is led.
- As a method of solving the above-described problem, a method of forming a base metal layer on an insulating film by a dry plating method and then applying a copper film layer as an intermediate metal layer obtained by electroless plating to coat an exposed part of the insulating film due to each pin hole has been proposed (see, e.g., Patent Document 3).
- However, according to this method, an exposed part of the insulating film due to a pin hole can be assuredly eliminated to some extent but, on the other hand, it is known that a plating liquid, its preprocessing liquid or the like used in electroless copper plating processing enters a space between the insulting film and the base metal layer from already formed large and small various pin hole parts, and this may possibly becomes a factor that obstructs adhesion properties of the base material layer and adhesion properties of a conductor layer subsequently formed by electrolytic copper plating, and hence this method is not a sufficient countermeasure.
- Further, for example, Patent Document 4 proposes a non-adhesive flexible laminate including a polymer film having a plasma-processed surface, a nickel tie coating layer containing nickel or a nickel alloy that has adhered to the plasma-processed surface, a copper coating layer that has adhered to the nickel layer, and another copper layer that has adhered to the copper coating layer, and discloses the nickel tie coating layer whose metal for a nickel alloy is selected from a group including Cu, Cr, Fe, V, Ti, Al, Si, Pd, Ta, W, Zn, In, Sn, Mn, Co, and two or more mixtures of these metals. Specifically, as useful Ni alloys, there are Monel (approximately 67% Ni, and 30% Cu), Inconel (Approximately 76% Ni, 16% Cr, and 8% Fe) and others. This document explains that the obtained laminated film is superior in initial peel strength, peel strength after solder floating, and peel strength after a heat cycle, but does not describe about excellence in properties of a composite metal film.
- Furthermore, for example, Patent Document 5 discloses that a first thin layer formed of at least one type of metal selected from a group including nickel, chrome, molybdenum, tungsten, vanadium, titanium, and manganese is formed on a polyimide side by a vacuum film forming method, a second thin layer with a predetermined thickness made of copper is formed thereon by the vacuum film forming method, and a third thin layer with a predetermined thickness made of copper is formed on the second thin layer by electroplating with a predetermined current density in order to improve heat-resisting adhesiveness of a polyamide/metal interface on a polyimide side of a copper-clad polyimide film provided by applying and hardening a polyimide varnish on a copper foil and improve productivity of this composite base material and durability and reliability of a final electrical product, but chrome alone is described as the first thin layer in an embodiment thereof, excellence in properties of a composite metal film is not explained.
- Likewise, for example, Patent Document 6 also discloses provision of a flexible printed wiring substrate by superimposing on one side or both sides of a plastic film a laminated body constituted of an evaporated layer of nickel, cobalt, chrome, palladium, titanium, zirconium, molybdenum, or tungsten and an electron beam heating evaporated copper layer that is superimposed on the evaporated layer, made of an aggregation of evaporated particles whose diameter falls in a range of 0.007 to 0.850 μm, and has a desired circuit formed thereon, and a mask layer that has no circuit formed thereon and is constituted of a mask layer made of an insulative organic material in order to provide a reliable inexpensive flexible printed wiring substrate superior in interlayer adhesion, heat resistance, chemical resistance, flexibility, and electrical characteristics, but a chrome evaporated layer alone is described in an embodiment of this document, and excellence in characteristics of a composite metal film is not explained at all.
- Patent Document 1: Japanese Examined Patent Application Publication No. 1994-132628
- Patent Document 2: Japanese Examined Patent Application Publication No. 1996-139448
- Patent Document 3: Japanese Examined Patent Application Publication No. 1998-195668
- Patent Document 4: PCT National Publication No. 2000-508265
- Patent Document 5: Japanese Examined Patent Application Publication No. 1995-197239
- Patent Document 6: Japanese Examined Patent Application Publication No. 1993-283848
- It is an object of the present invention to solve the above-explained problems in manufacture of a flexible wiring substrate using a dry plating method and an electroplating method, and provide adhesiveless copper clad laminates which does not have defects on a copper film part due to a pin hole generated at the time of forming a base metal layer on an insulating film by a dry plating process, has excellent adhesion between the insulating film and the base metal layer and corrosion resistance, and has a copper film layer having high insulation reliability, and to provide a method for manufacturing such adhesiveless copper clad laminates.
- In adhesiveless copper clad laminates in which a base metal layer is directly formed on at least one plane of an insulating film without using an adhesive and a copper conductor layer with a desired thickness is formed on the base metal layer, the present inventors uses adhesiveless copper clad laminates that has a base metal layer formed on the insulating film by a dry plating method and a copper film layer formed on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm and mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel, and the present inventors can thereby obtain adhesiveless copper clad laminates that can solve the problems, has excellent adhesion and corrosion resistance, and has a copper conductor layer having high insulation reliability, and revealed that the adhesiveless copper clad laminates can be also applied to a flexible wiring substrate having a wiring portion with a narrow width and a narrow pitch, thus resulting in the present invention.
- That is, a first aspect of the present invention provides adhesiveless copper clad laminates in which a base metal layer is directly formed on at least one plane of an insulating film without using an adhesive in between and a copper film layer is then formed on the base metal layer, wherein the base metal layer is constituted of a base metal layer having a film thickness of 3 to 50 num that is formed by a dry plating method and mainly contains a chrome-molybdenum-nickel alloy wherein a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- Further, a second aspect of the present invention provides the adhesiveless copper clad laminates defined in the first invention, wherein the copper film layer formed on the base metal layer has a film thickness of 10 nm to 35 μm.
- Furthermore, a third aspect of the present invention provides the adhesiveless copper clad laminates defined in the first aspect of the present invention, wherein the insulating film is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film.
- Moreover, a fourth aspect of the present invention provides a method for manufacturing adhesiveless copper clad laminates in which a base metal layer is directly formed on at least one plane of an insulating film without using an adhesive in between and a copper film layer is then formed on the base metal layer, the method comprising: forming the base metal layer having a film thickness of 3 to 50 nm on the insulating film by a dry plating method, the base metal layer mainly containing a chrome-molybdenum-nickel alloy wherein a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel; and forming the copper film layer on the base metal layer.
- Additionally, a fifth aspect of the present invention provides the method for manufacturing adhesiveless copper clad laminates defined in the fourth aspect of the present invention, wherein the copper film layer is formed by the dry plating method, and then a copper film layer is further formed on the copper film layer by a wet plating method.
- Further, a sixth aspect of the present invention provides the method for manufacturing adhesiveless copper clad laminates defined in the fourth and fifth aspects of the present invention, wherein the dry plating method is one of a vacuum deposition method, a sputtering method, and an ion plating method.
- According to the method for manufacturing adhesiveless copper clad laminates of the present invention, in adhesiveless copper clad laminates provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between and then by forming a copper film layer on the base metal, it is possible to obtain the adhesiveless copper clad laminates characterized by having the base metal layer with a film thickness of 3 to 50 nm formed on the insulating film by a dry plating method and the copper film layer with a film thickness of 10 nm to 35 μm formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- Furthermore, according to the adhesiveless copper clad laminates of the present invention, a reduction in heat-resisting peel strength can be avoided since the base metal layer contains chrome, corrosion resistance and insulation reliability can be improved since the base metal layer contains molybdenum, and hence using the adhesiveless copper clad laminates can efficiently obtain a flexible wiring substrate that has excellent adhesion and corrosion resistance and has a defect-free reliable wiring portion with a narrow width and a narrow pitch, whereby an effect of the adhesiveless copper clad laminates is extremely large.
- 1) Adhesiveless Copper Clad Laminates
- adhesiveless copper clad laminates according to the present invention is adhesiveless copper clad laminates provided by forming a base metal layer directly at least on one plane of an insulating film without having an adhesive in between and forming a copper conductor layer with a desired thickness on the base metal layer, and is characterized in that the base metal layer having a film thickness of 3 to 50 nm is formed on the insulating film by a dry plating method and a copper film layer is formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
- Adopting the above-described structure can obtain the adhesiveless copper clad laminates that has excellent adhesion and corrosion resistance and has a copper conductor layer with high insulation reliability formed thereon.
- Here, as a film thickness of the base metal layer mainly containing the chrome-molybdenum-nickel alloy obtained by the dry plating method, a range of 3 to 50 nm is preferable. When the film thickness is smaller than 3 nm, a problem of, e.g., a considerable reduction in wiring peel strength occurs because an etchant used when performing wiring processing infiltrates to thereby raise a wiring portion, and hence this film thickness is not preferable. Additionally, when the film thickness exceeds 50 nm, effecting etching is difficult, and hence this film thickness is not preferable.
- Further, as a composition of the base metal layer, the chrome ratio must be 4 to 22 weight %, the molybdenum ratio must be 5 to 40 weight %, and the balance must be nickel.
- First, the chrome ratio must be 4 to 22 weight % in order to prevent heat-resisting peel strength from being considerably lowered due to heat deterioration. When the chrome ratio becomes lower than 4 weight %, a considerable reduction in heat-resisting peel strength due to heat deterioration cannot be avoided, and hence this is not preferable. Furthermore, when the chrome ratio exceeds 22 weight %, performing etching is difficult, which is not preferable.
- Therefore, in case of chrome, a preferable ratio is 4 to 15 weight %, and a particularly preferable ratio is 5 to 12 weight %.
- Moreover, the molybdenum ratio must be 5 to 40 weight % in order to improve corrosion resistance and insulation reliability. When the molybdenum ratio is less than 5 weight %, an addition effect is not demonstrated, and corrosion resistance and insulation reliability cannot be improved, which is not preferable. Additionally, when the molybdenum ratio exceeds 40 weight %, heat-resisting peel strength tends to be extremely decreased, which is not preferable.
- Further, in case of a regular nickel base alloy target, if a nickel ratio exceeds 93%, a sputtering target itself serves as a ferromagnetic substance, and a film formation rate is lowered when the film is formed by magnetron sputtering, which is not preferable. In a target composition according to this structure, since a nickel amount is equal to or smaller than 93%, an excellent film formation rate can be obtained even if the film is formed by using the magnetron sputtering method. Meanwhile, a transition metal element can be appropriately added to the chrome-molybdenum-nickel alloy in accordance with intended characteristics in order to improve heat resistance or corrosion resistance.
- Furthermore, besides the chrome-molybdenum-nickel alloy, an unavoidable impurity which is contained by, e.g., import during manufacture of a target and whose ratio is not greater than one weight % is present in the base metal layer.
- Therefore, in Table 1, a nickel amount including the unavoidable impurity whose ratio is not greater than one weight % is represented as a balance (=bal.).
- In the adhesiveless copper clad laminates according to the present invention, it is preferable that a film thickness of the copper film layer including both the copper film layer formed on the base metal layer by the dry plating method and the copper film layer superimposed and formed on the copper film layer by the wet plating method is 10 nm to 35 μm. When this film thickness is smaller than 10 nm, the copper film layer formed by the wet plating method becomes thin, and hence power feeding becomes difficult in a subsequent wet plating process, which is not preferable. Further, when this film thickness exceeds 35 μm, productivity is lowered, which is not preferable.
- In the adhesiveless copper clad laminates according to the present invention, although there is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film as the insulating film, the polyimide-based film and the polyamide-based film are preferable in that they are suitable for an application requiring high-temperature connection, e.g., solder reflow.
- Furthermore, as the film, one having a film thickness of 8 to 75 μm can be preferably used. It is to be noted that an inorganic material, e.g., glass fiber can be appropriately added.
- Moreover, as the dry plating method, it is possible to use one of a vacuum deposition method, a sputtering method, and an ion plating method.
- On the other hand, forming the copper layer by the dry plating method and then superimposing and forming the copper film layer on the copper film layer by the wet plating method is suitable for forming a relatively thick film.
- 2) Method for Manufacturing Adhesiveless Copper Clad Laminates
- A method for manufacturing adhesiveless copper clad laminates according to the present invention will now be described in detail.
- In the present invention, as explained above, the base metal layer is directly formed on at least one plane of the insulating film as a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film without using an adhesive in between, and the copper conductor layer having a desired thickness is formed on the base metal layer.
- a) Dehydration Processing
- The film usually contains moisture, and atmospheric drying and/or vacuum drying must be carried out to remove the moisture present in the film before forming the base metal layer mainly containing the chrome-molybdenum-nickel alloy by the dry plating method. If this removal is insufficient, adhesion with respect to the base metal layer is deteriorated.
- b) Formation of Base Metal Layer
- When forming the base metal layer mainly containing the chrome-molybdenum-nickel alloy by the dry plating method, e.g., when using a take-up sputtering device to form the base metal layer, an alloy target having a composition of the base metal layer is attached to a sputtering cathode. Alternatively, a nickel-chrome alloy target and a molybdenum target can be attached to two cathodes to be simultaneously sputtered, and an input power of each cathode can be controlled to obtain the base metal layer having a desired film composition.
- Specifically, after the sputtering device having the film set therein is evacuated to form a vacuum therein, an Ar gas is introduced, the inside of the device is maintained at approximately 1.3 Pa, and an electric power is supplied from a sputtering direct-current power supply connected with the cathode to start sputtering discharge while carrying the insulating film disposed to a reeling/unreeling roll in the device at a speed of approximately 3 m/minute, thereby continuously forming the metal layer mainly containing the chrome-molybdenum-nickel alloy on the film. This film formation allows the base metal film with a desired film thickness mainly containing the chrome-molybdenum-nickel alloy to be formed on the film.
- c) Formation of Copper Film Layer
- Likewise, the sputtering device in which a copper target is attached to the sputtering cathode can be used to form the copper film layer by the dry plating method. At this time, it is preferable to continuously form the base metal layer and the copper film layer in the same vacuum chamber.
- Moreover, when further forming the copper film layer on the copper film layer by the wet plating method, there are two cases, i.e., forming this film by electrolytic copper plating processing and forming this film by a combination of electroless copper plating processing as primary plating and a wet plating method, e.g., electrolytic copper plating processing as secondary plating.
- Here, the electroless copper plating processing is carried out as the primary plating because a rough and large pin hole may be formed and an exposed part may be thereby formed on a surface of the insulating film when dry plating is performed based on vapor deposition, and hence an electroless-copper-plated film layer is formed on the entire substrate surface to cover the film exposed surface in order to form an excellent conductor on the entire substrate surface to avoid an influence of the pin hole.
- It is to be noted that any reducing deposition type liquid in which a metal ion contained therein has autocatalytic properties and is reduced by a reducer, e.g., hydrazine, phosphinic acid sodium, or formalin to be subjected metal deposition may be used as an electroless plating liquid used in electroless plating, but the present invention has a purpose of realizing an excellent conductor at the exposed part of insulating film caused due to a pin hole generated in the base metal layer, and hence an electroless copper plating liquid having excellent electroconductivity and relatively good workability is optimum.
- Additionally, as a thickness of the copper-plated film layer provided by the electroless copper plating processing as the primary plating, a thickness that allows a defect due to a pin hole on the substrate surface to be remedied and prevents dissolution by the electrolytic copper plating liquid when performing the electrolytic copper plating processing as the later-described secondary plating can suffice, and it is preferable for this thickness to fall within a range of 0.01 to 1.0 μm.
- The electrolytic copper plating processing as the secondary plating is performed on the electroless-copper-plated film layer in order to form the copper conductor layer with a desired thickness.
- According to the copper film layer formed on the base metal layer in this manner, it is possible to obtain the adhesiveless copper clad laminates that is not affected by large and small various pin holes generated in formation of the base metal layer and has excellent adhesion of the conductor layer.
- It is to be noted that various conditions in the wet copper plating method can be adopted for both the primary an the secondary plating in the wet copper plating processing carried out in the present invention.
- Further, a total thickness of the copper film layers formed on the base metal layer by the wet/dry plating methods in this manner must be set to equal to or below 35 μm at maximum.
- 3) Formation of Wiring Pattern
- The above-described adhesiveless copper clad laminates according to the present invention is used to individually form a wiring pattern on at least one plane of the adhesiveless copper clad laminates. Furthermore, a via hole for interlayer connection can be formed at a predetermined position to be used in various applications.
- More specifically, (a) a high-density wiring pattern is individually formed on at least one plane of a flexible sheet. (b) A via hole piercing the wiring layer and the flexible sheet is formed in the flexible sheet having the wiring layer formed thereon. (c) An electroconductive material is filled in the via hole to provide electroconductivity in the hole in some cases.
- As a method for forming the wiring pattern, it is possible to use a conventionally known method, e.g., photo-etching by which adhesiveless copper clad laminates having a copper film layer formed on at least one plane thereof is prepared, screen printing or a dry film is laminated on the copper to form a photosensitive resist film, and then exposure development is carried out to perform patterning, for example. Subsequently, the metal foil is selectively etched by using an etchant, e.g., a ferric chloride solution, and then the resist is removed to form a predetermined wiring pattern.
- In order to realize density growth of wiring lines, it is preferable to prepare adhesiveless copper clad laminates having copper film layers formed on both planes thereof and pattern both the planes to form wiring patterns on both the planes of the substrate. Although how all the wiring patterns are divided into some wiring regions is dependent on, e.g., a distribution of a wiring density of the wiring patterns, it is good enough to divide the wiring patterns into a high-density wiring region having both a wiring width and a wiring gap that are not greater than 50 μm and any other wiring region, and set a size of the wiring substrate to be divided to approximately 10 to 65 mm while considering a thermal expansion difference from a printed substrate, convenience in handling and others, thereby performing appropriate division.
- As a method for forming the via hole, a conventionally known method can be used, and the via hole piercing the wiring patter and the flexible sheet is formed at a predetermined position on the wiring pattern by, e.g., laser processing or photo-etching. It is preferable to reduce a diameter of the via hole so that provision of electroconductivity in the hole is not obstructed, and the diameter is usually set to 100 μm or below or, preferably 50 μm or below.
- An electroconductive metal, e.g., copper is filled in the via hole by plating, vapor deposition, or sputtering, or a mask having a predetermined opening pattern is used to press fit an electroconductive paste in the via hole, and the electroconductive metal or paste is dried to provide electroconductivity in the hole, thus electrically connecting the layers with each other. As the electroconductive metal, there is copper, gold, nickel, or the like.
- Examples according to the present invention will now be explained together with comparative examples.
- As a method for measuring peel strength, a method conforming to IPC-TM-650, NUMBER 2.4.9 was used. However, a lead width was determined as 1 mm, and an angle of peeling was determined as 90°. A lead was formed by a subtractive method or a semi-additive method. Further, as an index of heat resistance, a film base material having a lead of 1 mm formed thereon was left in an oven at 150° C. for 168 hours, taken out from the oven, and left until a room temperature is reached, and peel strength at 90° was evaluated.
- First, the obtained adhesiveless copper clad laminates was used, and a comb-tooth test piece having a pitch of 30 μm (a line/a space=15/15 μm) was formed by ferric chloride etching based on the subtracting method, or a test piece formed by the semi-additive method was manufactured.
- Etching properties were basically confirmed by using a microscope to observe the test piece. Furthermore, an insulating resistance value of a test piece of HHBT was also measured and, and it was determined that an etching residue is present between the leads and etching properties are poor in case of a resistance value that is not greater than 10−6Ω.
- In measurement of an HHBT (High Temperature High Humidity Bias Test) as an environment resistance test, the test piece is used, and DC 40 V is applied between thermals in an RH environment of 85° C. and 85% based on JPCA-ET04 to observe a 1000 hr resistance. A short-circuit defect was determined when the resistance was reduced to 106Ω or below, and a success in the test was determined when the resistance was not lower than 106Ω even after elapse of 1000 hours.
- As an index of corrosion, there is discoloration on a rear surface, and this was performed by observing a rear surface of a sample after the HHBT. A defect was determined when considerable discoloration was observed, and a success was determined when discoloration is minor.
- A polyimide film (a product name: “Kapton 150EN” manufactured by Du Pont-Toray Co., Ltd.) having a thickness of 38 μm was cut out with a size of 12 cm×12 cm, a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd) was used as a first layer of a base metal layer on one plane of the polyimide film, and a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 20 weight % was formed by a direct-current sputtering method. When a film thickness of a part of the film formed under the same conditions was separately measured by using a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A copper film layer with a thickness of 200 nm was further formed as a second layer on the film having the Cr—Mo—Ni film formed thereon based on the sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd), and electroplating was used to form the film up to 8 μm, thereby obtaining a raw base material for evaluation. A lead of 1 mm for peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 640 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 510 N/m without a considerable change, and hence it was excellent.
- An insulation reliability test was conducted with respect to three samples, and no deterioration was observed in all the samples. Further, all the samples had no etching residue and excellent etching properties. Furthermore, no change was observed in a corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 22 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 22 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 623 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 597 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 5 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 5 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 631 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 505 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 4 weight % and an Mo ratio is 40 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 4 weight % and an Mo ratio is 40 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 645 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 450 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 15 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 15 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 620 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 575 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 6 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 6 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 30 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 660 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 560 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 12 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 12 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 5 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 620 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 590 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a shorter time to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 3 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 632 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 577 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a longer time to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 50 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 613 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 595 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1. A copper film layer with a thickness of 1 μm was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.), and a film was formed by electroplating up to 8 μm to provide a raw base material for evaluation. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 610 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 547 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1. A copper film layer was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.) up to 8 μm to provide a raw base material for evaluation. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 630 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 565 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A Cr—Mo—Ni film having a film thickness of 20 nm was formed like Example 1. A copper film layer was formed as a second layer on the Cr—Mo—Ni film by a sputtering method using a Cu target (manufactured by Sumitomo Metal Mining Co., Ltd.) up to 500 nm, and a lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the semi-additive method while increasing a thickness up to 8 μm.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 605 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 535 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base material for evaluation was obtained like Example 1 except that an aromatic polyamide film (a product name: “Aramica 120RC” manufactured by Teijin Advanced Films Limited) having a thickness of 12 μm was used as a film. When a film thickness of a part of the film formed under the same conditions was separately measured, it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 600 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 500 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 3 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 3 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 630 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 380 N/m, and hence a considerable reduction was observed.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had no etching residue and excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 24 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 24 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 632 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 586 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was to be conducted with respect to three samples, but the base metal layer was not able to be etched by salt iron etching and a lead having a 30 μm pitch failed to be formed in the two samples. Moreover, no change was observed on a rear surface of the film in the corrosion resistance test (discoloration on the rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 4 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 4 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 610 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 560 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but a resistance was reduced to 106Ω or below to result in a short-circuit failure in the two samples. On the other hand, all the samples had excellent etching properties. Additionally, discoloration was observed at many positions on a rear surface of the film in the corrosion resistance test (discoloration on the rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 44 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 44 weight % by the direct-current sputtering method.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 20 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 635 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was greatly reduced to be 250 N/m.
- The insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples. Moreover, all the samples had excellent etching properties. Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a shorter time to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 2 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 620 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 540 N/m without a considerable change, and hence it was excellent.
- The insulation reliability test was conducted with respect to three samples, but a resistance was reduced to 106Ω or below to result in a short-circuit failure in all the samples. On the other hand, all the samples had excellent etching properties. Additionally, discoloration was observed at many positions on a rear surface of the film in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- A raw base metal for evaluation was obtained like Example 1 except that a Cr—Mo—Ni alloy target in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % (manufactured by Sumitomo Metal Mining Co., Ltd.) was used as a first layer of a base metal layer to form a film of a Cr—Mo—Ni alloy base metal layer in which a Cr ratio is 10 weight % and an Mo ratio is 20 weight % by the direct-current sputtering method, and a sputtering time was changed to a longer time than that in Example 9 to vary a film thickness.
- When a film thickness of a part of the film formed under the same conditions was separately measured by a transmission electron microscope (TEM: manufactured by Hitachi Ltd.), it was 53 nm. A lead of 1 mm for the peel strength evaluation and a comb-tooth test piece having a 30 μm pitch for the HHBT were formed from this base material by the subtracting method.
- Initial peel strength of the obtained adhesiveless copper clad laminates was 618 N/m. Heat-resisting peel strength after being left in the oven at 150° C. for 168 hours was 566 N/m without a considerable change, and hence it was excellent.
- In an etching test, the base metal layer was not able to be formed by salt iron etching and a lead having a 30 μm pitch failed to be formed in two of three samples.
- Moreover, the insulation reliability test was conducted with respect to three samples, but no deterioration was observed in all the samples.
- Additionally, no change was observed in the corrosion resistance test (discoloration on a rear surface of the film after being left in an RH constant-temperature tank at 85° C. and 85% for 1000 hours).
- Table 1 collectively shows results of Examples and Comparative Examples.
TABLE 1 Base metal Heat- layer Base metal Copper film Initial resisting composition layer film layer film peel peel Insulation Corrosion (weight %) thickness thickness strength strength Etching reliability resistance Cr Mo Ni (nm) (μm) (N/m) (N/m) properties test test Example 1 4 20 bal. 20 8 640 510 Good Good Good Example 2 22 20 bal. 20 8 623 597 Good Good Good Example 3 4 5 bal. 20 8 631 505 Excellent Good Good Example 4 4 40 bal. 20 8 645 450 Excellent Good Good Example 5 15 20 bal. 20 8 620 575 Excellent Good Good Example 6 6 20 bal. 30 8 660 560 Good Good Good Example 7 12 20 bal. 5 8 620 590 Excellent Good Good Example 8 10 20 bal. 3 8 632 577 Excellent Good Good Example 9 10 20 bal. 50 8 613 595 Good Good Good Example 10 4 20 bal. 20 8 Sputtering 610 547 Good Good Good 1 μm + Electrolytic plating Example 11 4 20 bal. 20 8 Sputtering 630 565 Good Good Good 8 μm Example 12 4 20 bal. 20 8 Sputtering 605 535 Good Good Good 500 nm Semi- additive method Example 13 4 20 bal. 20 8 600 500 Good Good Good Comparative 3 20 bal. 20 8 630 330 Excellent Moderate Good Example 1 Comparative 24 20 bal. 20 8 632 586 Moderate Moderate Good Example 2 Comparative 10 4 bal. 20 8 610 560 Good Moderate Bad Example 3 Comparative 10 44 bal. 20 8 635 250 Good Good Good Example 4 Comparative 10 20 bal. 2 8 620 540 Good Bad Bad Example 5 Comparative 10 20 bal. 53 8 618 566 Moderate Good Good Example 6 - As explained above, according to the method for manufacturing adhesiveless copper clad laminates of the present invention, in the adhesiveless copper clad laminates provided by forming the base metal layer directly at least one plane of the insulating film without using an adhesive in between and forming the copper conductor layer having a desired thickness on the base metal layer, the base metal layer having a film thickness of 3 to 50 nm can be formed on the insulating film by the dry plating method and a copper film layer having a film thickness of 10 nm to 35 μm can be formed on the base metal layer, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel and, according to the adhesiveless copper clad laminates of the present invention, a reduction in heat-resisting peel strength can be avoided since chrome is contained in the base metal layer, corrosion resistance and insulation reliability can be improved since molybdenum is also contained, using the adhesiveless copper clad laminates can thereby efficiently obtain a flexible wiring substrate that has excellent adhesion and corrosion resistance and has a defect-free reliable wiring portion with a narrow width and a narrow pitch, and hence an effect of this adhesiveless copper clad laminates is very large.
Claims (6)
1. Adhesiveless copper clad laminates provided by forming a base metal layer directly formed at least on one plane of an insulating film without using an adhesive in between and then forming a copper film layer on the base metal layer, wherein the base metal layer is constituted of a base metal layer with a film thickness of 3 to 50 nm formed by a dry plating method, the base metal layer mainly containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel.
2. The adhesiveless copper clad laminates according to claim 1 , wherein the copper film layer formed on the base metal layer has a film thickness of 10 nm to 35 μm.
3. The adhesiveless copper clad laminates according to claim 1 , wherein the insulating film is a resin film selected from a polyimide-based film, a polyamide-based film, a polyester-based film, a polytetrafluoroethylene-based film, a polyphenylene sulfide-based film, a polyethylene naphthalate-based film, and a liquid crystal polymer-based film.
4. A method for manufacturing adhesiveless copper clad laminates provided by forming a base metal layer directly at least on one plane of an insulating film without using an adhesive in between and then forming a copper film layer on the base metal layer, the method comprising: forming the base metal layer with a film thickness of 3 to 50 nm on the insulating film by a dry plating method, the base metal layer containing a chrome-molybdenum-nickel alloy in which a chrome ratio is 4 to 22 weight %, a molybdenum ratio is 5 to 40 weight %, and the balance is nickel; and forming the copper film layer on the base metal layer.
5. The method according to claim 4 , wherein the copper film layer is formed by the dry plating method, and then a copper film layer is further formed on the copper film layer by a wet plating method.
6. The method according to claim 4 , wherein the dry plating method is one of a vacuum deposition method, a sputtering method, and an ion plating method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/805,919 US8318320B2 (en) | 2004-09-01 | 2010-08-24 | Adhesiveless copper clad laminates and method for manufacturing thereof |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004-254941 | 2004-09-01 | ||
JP2004254941 | 2004-09-01 | ||
PCT/JP2005/015363 WO2006025240A1 (en) | 2004-09-01 | 2005-08-24 | Double layer flexible board and method for manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
US20080090095A1 true US20080090095A1 (en) | 2008-04-17 |
Family
ID=35999897
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/661,308 Abandoned US20080090095A1 (en) | 2004-09-01 | 2005-08-24 | Adhesiveless Copper Clad Laminates And Method For Manufacturing Thereof |
US12/805,919 Active US8318320B2 (en) | 2004-09-01 | 2010-08-24 | Adhesiveless copper clad laminates and method for manufacturing thereof |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/805,919 Active US8318320B2 (en) | 2004-09-01 | 2010-08-24 | Adhesiveless copper clad laminates and method for manufacturing thereof |
Country Status (5)
Country | Link |
---|---|
US (2) | US20080090095A1 (en) |
JP (1) | JP4605511B2 (en) |
KR (1) | KR100858309B1 (en) |
CN (1) | CN100566505C (en) |
WO (1) | WO2006025240A1 (en) |
Cited By (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102717554A (en) * | 2012-07-02 | 2012-10-10 | 富景资本有限公司 | A two-layer flexible copper clad laminate |
US20150076545A1 (en) * | 2012-08-30 | 2015-03-19 | Panasonic Intellectual Property Management Co., Lt | Electronic component package and method of manufacturing same |
US9449937B2 (en) | 2012-09-05 | 2016-09-20 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10292265B2 (en) * | 2014-09-09 | 2019-05-14 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
US20200243432A1 (en) * | 2019-01-24 | 2020-07-30 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
US11063169B2 (en) | 2019-05-10 | 2021-07-13 | Applied Materials, Inc. | Substrate structuring methods |
CN113692111A (en) * | 2021-08-24 | 2021-11-23 | 江苏耀鸿电子有限公司 | High-corrosion-resistance flexible copper-clad plate and preparation method thereof |
US11232951B1 (en) | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
US11257790B2 (en) | 2020-03-10 | 2022-02-22 | Applied Materials, Inc. | High connectivity device stacking |
US11264333B2 (en) | 2019-05-10 | 2022-03-01 | Applied Materials, Inc. | Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration |
US11400545B2 (en) | 2020-05-11 | 2022-08-02 | Applied Materials, Inc. | Laser ablation for package fabrication |
US11404318B2 (en) | 2020-11-20 | 2022-08-02 | Applied Materials, Inc. | Methods of forming through-silicon vias in substrates for advanced packaging |
US11426976B2 (en) | 2019-10-02 | 2022-08-30 | Sumitomo Metal Mining Co., Ltd. | Copper-clad laminate |
US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
US11521937B2 (en) | 2020-11-16 | 2022-12-06 | Applied Materials, Inc. | Package structures with built-in EMI shielding |
CN116021848A (en) * | 2021-10-26 | 2023-04-28 | 东丽尖端素材株式会社 | Copper clad laminate film and electronic device including same |
US11676832B2 (en) | 2020-07-24 | 2023-06-13 | Applied Materials, Inc. | Laser ablation system for package fabrication |
US11705365B2 (en) | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
US11862546B2 (en) | 2019-11-27 | 2024-01-02 | Applied Materials, Inc. | Package core assembly and fabrication methods |
US11931855B2 (en) | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
US12183684B2 (en) | 2021-10-26 | 2024-12-31 | Applied Materials, Inc. | Semiconductor device packaging methods |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011100846A (en) * | 2009-11-05 | 2011-05-19 | Sumitomo Metal Mining Co Ltd | Two-layer flexible board, method of manufacturing the same, two-layer flexible wiring board, method of manufacturing the same, and plasma processing device |
WO2011114997A1 (en) * | 2010-03-16 | 2011-09-22 | 住友金属鉱山株式会社 | Two-layer flexible substrate and process for producing same |
JP5746866B2 (en) * | 2011-01-05 | 2015-07-08 | Jx日鉱日石金属株式会社 | Copper-clad laminate and manufacturing method thereof |
CN104247576B (en) * | 2012-04-24 | 2017-05-31 | 住友金属矿山株式会社 | 2 layers of flexible wiring substrate and flexible wiring and its manufacture method |
KR101421701B1 (en) | 2012-09-27 | 2014-07-22 | 엘에스엠트론 주식회사 | Flexible circuit clad laminate, printed circuit board using it, and method of manufacturing the same |
KR101357141B1 (en) * | 2012-09-27 | 2014-02-03 | 엘에스엠트론 주식회사 | Flexible circuit clad laminate, printed circuit board using it, and method of manufacturing the same |
JP6292466B2 (en) * | 2013-02-20 | 2018-03-14 | 日立金属株式会社 | Metal thin film and Mo alloy sputtering target material for metal thin film formation |
TWI568865B (en) * | 2013-10-23 | 2017-02-01 | Sumitomo Metal Mining Co | Layer 2 flexible wiring substrate and manufacturing method thereof, and two-layer flexible wiring board and manufacturing method thereof |
CN104968158A (en) * | 2015-06-03 | 2015-10-07 | 洛阳伟信电子科技有限公司 | Thick copper foil fine line fine pitch circuit board outer line processing method |
JP6724775B2 (en) * | 2016-12-28 | 2020-07-15 | 凸版印刷株式会社 | Wiring board individualization method and package board |
CN110049618A (en) * | 2018-01-15 | 2019-07-23 | 达迈科技股份有限公司 | Polyimide film, board structure and circuit substrate for metallization |
KR102218282B1 (en) * | 2020-02-24 | 2021-02-19 | 주식회사 플렉스이비전 | Method manufacturing stacked structure for printed circuit board comprising ternary-compound and device operating thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3857683A (en) * | 1973-07-27 | 1974-12-31 | Mica Corp | Printed circuit board material incorporating binary alloys |
US6171714B1 (en) * | 1996-04-18 | 2001-01-09 | Gould Electronics Inc. | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1065311A (en) * | 1996-08-23 | 1998-03-06 | Sumitomo Metal Mining Co Ltd | Manufacturing method for double-layer flexible board |
JPH1065316A (en) * | 1996-08-23 | 1998-03-06 | Sumitomo Metal Mining Co Ltd | Manufacturing method of double-layer flexible board |
JP2828071B2 (en) * | 1996-10-22 | 1998-11-25 | 三菱マテリアル株式会社 | Physically deposited amorphous film material with excellent corrosion resistance |
KR100878863B1 (en) * | 2001-02-21 | 2009-01-15 | 가부시키가이샤 가네카 | Wiring board, its manufacturing method, polyimide film used for this wiring board, and etching liquid used for the manufacturing method |
CN1211001C (en) * | 2001-12-18 | 2005-07-13 | 黄堂杰 | Flexible circuit base board and its manufacturing method |
JP4008388B2 (en) * | 2003-06-30 | 2007-11-14 | シャープ株式会社 | Film for semiconductor carrier, semiconductor device using the same, and liquid crystal module |
-
2005
- 2005-08-24 WO PCT/JP2005/015363 patent/WO2006025240A1/en active Application Filing
- 2005-08-24 KR KR1020077005040A patent/KR100858309B1/en active Active
- 2005-08-24 US US11/661,308 patent/US20080090095A1/en not_active Abandoned
- 2005-08-24 CN CNB2005800345307A patent/CN100566505C/en active Active
- 2005-08-24 JP JP2006531950A patent/JP4605511B2/en active Active
-
2010
- 2010-08-24 US US12/805,919 patent/US8318320B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3857683A (en) * | 1973-07-27 | 1974-12-31 | Mica Corp | Printed circuit board material incorporating binary alloys |
US6171714B1 (en) * | 1996-04-18 | 2001-01-09 | Gould Electronics Inc. | Adhesiveless flexible laminate and process for making adhesiveless flexible laminate |
Cited By (39)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102717554A (en) * | 2012-07-02 | 2012-10-10 | 富景资本有限公司 | A two-layer flexible copper clad laminate |
CN102717554B (en) * | 2012-07-02 | 2015-08-19 | 武汉光谷创元电子有限公司 | A kind of two stratotype flexibility coat copper plates |
US20150076545A1 (en) * | 2012-08-30 | 2015-03-19 | Panasonic Intellectual Property Management Co., Lt | Electronic component package and method of manufacturing same |
US9368469B2 (en) * | 2012-08-30 | 2016-06-14 | Panasonic Intellectual Property Management Co., Ltd. | Electronic component package and method of manufacturing same |
US9449937B2 (en) | 2012-09-05 | 2016-09-20 | Panasonic Intellectual Property Management Co., Ltd. | Semiconductor device and method for manufacturing the same |
US10292265B2 (en) * | 2014-09-09 | 2019-05-14 | Sumitomo Electric Industries, Ltd. | Substrate for printed circuit board, printed circuit board, and method for producing substrate for printed circuit board |
US20200243432A1 (en) * | 2019-01-24 | 2020-07-30 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
US11342256B2 (en) * | 2019-01-24 | 2022-05-24 | Applied Materials, Inc. | Method of fine redistribution interconnect formation for advanced packaging applications |
US11362235B2 (en) | 2019-05-10 | 2022-06-14 | Applied Materials, Inc. | Substrate structuring methods |
US11398433B2 (en) | 2019-05-10 | 2022-07-26 | Applied Materials, Inc. | Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration |
US11837680B2 (en) * | 2019-05-10 | 2023-12-05 | Applied Materials, Inc. | Substrate structuring methods |
US11264333B2 (en) | 2019-05-10 | 2022-03-01 | Applied Materials, Inc. | Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration |
US11264331B2 (en) | 2019-05-10 | 2022-03-01 | Applied Materials, Inc. | Package structure and fabrication methods |
US11063169B2 (en) | 2019-05-10 | 2021-07-13 | Applied Materials, Inc. | Substrate structuring methods |
US11715700B2 (en) | 2019-05-10 | 2023-08-01 | Applied Materials, Inc. | Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration |
US11476202B2 (en) | 2019-05-10 | 2022-10-18 | Applied Materials, Inc. | Reconstituted substrate structure and fabrication methods for heterogeneous packaging integration |
US11887934B2 (en) | 2019-05-10 | 2024-01-30 | Applied Materials, Inc. | Package structure and fabrication methods |
US12051653B2 (en) | 2019-05-10 | 2024-07-30 | Applied Materials, Inc. | Reconstituted substrate for radio frequency applications |
US11417605B2 (en) | 2019-05-10 | 2022-08-16 | Applied Materials, Inc. | Reconstituted substrate for radio frequency applications |
US11521935B2 (en) | 2019-05-10 | 2022-12-06 | Applied Materials, Inc. | Package structure and fabrication methods |
US20220278248A1 (en) * | 2019-05-10 | 2022-09-01 | Applied Materials, Inc. | Substrate structuring methods |
US11931855B2 (en) | 2019-06-17 | 2024-03-19 | Applied Materials, Inc. | Planarization methods for packaging substrates |
US11426976B2 (en) | 2019-10-02 | 2022-08-30 | Sumitomo Metal Mining Co., Ltd. | Copper-clad laminate |
US12087679B2 (en) | 2019-11-27 | 2024-09-10 | Applied Materials, Inc. | Package core assembly and fabrication methods |
US11881447B2 (en) | 2019-11-27 | 2024-01-23 | Applied Materials, Inc. | Package core assembly and fabrication methods |
US11862546B2 (en) | 2019-11-27 | 2024-01-02 | Applied Materials, Inc. | Package core assembly and fabrication methods |
US11742330B2 (en) | 2020-03-10 | 2023-08-29 | Applied Materials, Inc. | High connectivity device stacking |
US11257790B2 (en) | 2020-03-10 | 2022-02-22 | Applied Materials, Inc. | High connectivity device stacking |
US11454884B2 (en) | 2020-04-15 | 2022-09-27 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
US11927885B2 (en) | 2020-04-15 | 2024-03-12 | Applied Materials, Inc. | Fluoropolymer stamp fabrication method |
US11400545B2 (en) | 2020-05-11 | 2022-08-02 | Applied Materials, Inc. | Laser ablation for package fabrication |
US11232951B1 (en) | 2020-07-14 | 2022-01-25 | Applied Materials, Inc. | Method and apparatus for laser drilling blind vias |
US11676832B2 (en) | 2020-07-24 | 2023-06-13 | Applied Materials, Inc. | Laser ablation system for package fabrication |
US11521937B2 (en) | 2020-11-16 | 2022-12-06 | Applied Materials, Inc. | Package structures with built-in EMI shielding |
US11404318B2 (en) | 2020-11-20 | 2022-08-02 | Applied Materials, Inc. | Methods of forming through-silicon vias in substrates for advanced packaging |
US11705365B2 (en) | 2021-05-18 | 2023-07-18 | Applied Materials, Inc. | Methods of micro-via formation for advanced packaging |
CN113692111A (en) * | 2021-08-24 | 2021-11-23 | 江苏耀鸿电子有限公司 | High-corrosion-resistance flexible copper-clad plate and preparation method thereof |
CN116021848A (en) * | 2021-10-26 | 2023-04-28 | 东丽尖端素材株式会社 | Copper clad laminate film and electronic device including same |
US12183684B2 (en) | 2021-10-26 | 2024-12-31 | Applied Materials, Inc. | Semiconductor device packaging methods |
Also Published As
Publication number | Publication date |
---|---|
US20110059334A1 (en) | 2011-03-10 |
JP4605511B2 (en) | 2011-01-05 |
JPWO2006025240A1 (en) | 2008-05-08 |
WO2006025240A1 (en) | 2006-03-09 |
CN100566505C (en) | 2009-12-02 |
KR20070041608A (en) | 2007-04-18 |
CN101040571A (en) | 2007-09-19 |
US8318320B2 (en) | 2012-11-27 |
KR100858309B1 (en) | 2008-09-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8318320B2 (en) | Adhesiveless copper clad laminates and method for manufacturing thereof | |
US8288011B2 (en) | Adhesiveless copper clad laminates and method for manufacturing thereof | |
JP4968266B2 (en) | Two-layer flexible substrate, manufacturing method thereof, and flexible printed wiring board obtained from the two-layer flexible substrate | |
US8465656B2 (en) | Method for manufacturing a printed circuit board and a printed circuit board obtained by the manufacturing method | |
US20110003169A1 (en) | Non-Adhesive Flexible Laminate | |
JP2008162245A (en) | Plating method two-layer copper polyimide laminated film and manufacturing method thereof | |
JP2010005800A (en) | Two-layered flexible substrate, its method of manufacturing, printed-wiring board using the two-layered flexible substrate, and its method of manufacturing | |
KR101363771B1 (en) | Two-layer flexible substrate and process for producing same | |
JP4986081B2 (en) | Method for manufacturing printed wiring board | |
JP4385297B2 (en) | Two-layer flexible substrate and manufacturing method thereof | |
JP3888587B2 (en) | Etching method of flexible substrate | |
US20080102305A1 (en) | Adhesiveless Copper Clad Laminates And Method For Manufacturing Thereof | |
WO2010074056A1 (en) | Flexible laminate and flexible electronic circuit substrate formed using the same | |
JP4385298B2 (en) | Two-layer flexible substrate and manufacturing method thereof | |
JP2012186307A (en) | Two-layer flexible substrate, method of manufacturing the same, two-layer flexible printed wiring board whose base material is two-layer flexible substrate, and method of manufacturing the same | |
JP4877022B2 (en) | Method for manufacturing printed wiring board | |
JP2006013152A (en) | Two-layer flexible board and manufacturing method thereof | |
KR20220133495A (en) | Environmentally Friendly Flexible Circuit Board Using Non-Adhesive Coarse Laminated Plates and Its Manufacturing Method | |
JP2010212459A (en) | Double-layer flexible metal insulator laminated substrate, and double-layer flexible wiring board | |
JP2011176034A (en) | Method of manufacturing flexible printed board and etching processing method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: SUMITOMO METAL MINING CO., LTD., JAPAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:NAGATA, JUNICHI;ASAKAWA, YOSHIYUKI;REEL/FRAME:018997/0289 Effective date: 20070214 |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |