US20080012033A1 - Optoelectronic Semiconductor Component and Housing Base for Such a Component - Google Patents
Optoelectronic Semiconductor Component and Housing Base for Such a Component Download PDFInfo
- Publication number
- US20080012033A1 US20080012033A1 US11/597,971 US59797106A US2008012033A1 US 20080012033 A1 US20080012033 A1 US 20080012033A1 US 59797106 A US59797106 A US 59797106A US 2008012033 A1 US2008012033 A1 US 2008012033A1
- Authority
- US
- United States
- Prior art keywords
- semiconductor chip
- encapsulant
- housing base
- base body
- subarea
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
- H10H20/856—Reflecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
Definitions
- the invention relates to an optoelectronic semiconductor component, particularly to an electromagnetic radiation emitting semiconductor component according to the preamble of Claim 1 and to a housing base body according to the preamble of Claim 19 .
- It relates in particular to a surface-mountable optoelectronic component, particularly leadframe-based, in which the semiconductor chip is disposed in a recess of a housing base body and there fastened.
- the housing base body is preferably prefabricated before the semiconductor chip is mounted in the recess.
- Such semiconductor components are known for example from Siemens Components 29 (1991), Volume 4, pages 147-149.
- the encapsulant is conventionally for example an epoxy-resin-based potting material.
- potting materials are often susceptible to UV radiation. They yellow relatively quickly under the effect of UV radiation and consequently reduce light output from the component.
- encapsulants based on or comprised of silicone resin. Such encapsulants do not yellow under the effect of short-wave radiation, or do so at a sufficiently slow rate.
- a problem with encapsulants of this kind is that the bond they form with the materials conventionally used for the housing base body (for example, a polyphthalamide-based thermoplastic material) is not sufficiently resistant to ageing, especially under UV exposure, as is the case for example with epoxy resin.
- the materials conventionally used for the housing base body for example, a polyphthalamide-based thermoplastic material
- the bond they form with the materials conventionally used for the housing base body is not sufficiently resistant to ageing, especially under UV exposure, as is the case for example with epoxy resin.
- the object underlying the present invention is to provide a semiconductor component and a housing base body respectively of the initially cited kinds, particularly a surface-mountable semiconductor component or a surface-mountable housing base body respectively of the initially cited kinds, which affords a reduced risk of delamination, particularly complete delamination between the encapsulant and the housing base body.
- a housing base body is to be provided that is suitable for greatly miniaturized optoelectronic housing designs, particularly for greatly miniaturized light-emitting diode and photodiode designs.
- the “front side” of the semiconductor component or the housing base body is always to be understood as that outer surface which is to be seen when looking down on the semiconductor component from its direction of emission, hence the surface from which the recess penetrates into the housing base body and through which electromagnetic radiation generated by the semiconductor chip is therefore emitted.
- a wall bounding the recess is shaped such that there are formed on said wall, as viewed looking down on the front side of the semiconductor component,
- “Shaded” means herein particularly that the subarea(s) concerned is (are) in shadow as viewed from substantially any point in a radiation emitting region of the radiation emitting semiconductor chip and is (are) at least partially covered by encapsulant and from which the encapsulant extends to the semiconductor chip and covers it.
- a wall bounding the recess is shaped such that as viewed looking down on the front side of the semiconductor component, a shaded subarea is formed which extends ring-like all the way around the semiconductor chip, and which in particular is in shadow as viewed from substantially any point in a radiation emitting region of the radiation emitting semiconductor chip and which is at least partially covered by encapsulant all the way around the semiconductor chip and from which the encapsulant extends to the semiconductor chip and covers it.
- the shaded subarea extends particularly preferably in a funnel-like manner throughout, from the front side of the component toward the semiconductor chip, thereby causing the recess to taper toward the semiconductor chip.
- the shaded subarea is particularly preferably disposed at the top margin of the wall, in such fashion that the three-phase boundary line between the air, the encapsulant and the housing base body extends entirely within the shaded subarea and therefore is impinged on not at all, or to a sufficiently reduced extent (for example, due to reflection from the front side of the encapsulant), by radiation that has originated in the semiconductor chip and is undesirable at this location.
- the at least one shaded subarea is preferably formed at the margin of the recess with the front side of the housing base body, particularly at the front-side end face of the wall, or itself constitutes the front-side end face of the wall. This advantageously makes it possible to implement the shaded subarea and thus the component as a whole in an extremely space-saving manner without having to reduce the size of the (reflecting) recess in comparison to conventional components with no UV problems or epoxy encapsulant.
- the at least one shaded subarea can advantageously be formed in a particularly technically simple manner by means of at least one, or where space-saving is necessary preferably by means of only one, chamfer provided at the front-side margin of the wall and sloping toward the recess.
- the front-side margin of the recess is configured in the manner of a funnel directed toward the semiconductor chip.
- the end face of the wall is configured as at least partially funnel-like over its entire width and is therefore to be considered at least partially as part of the recess.
- a shaded subarea that is configured as funnel-like throughout, as is made possible by an inventive configuration of the housing base body, provides the particular advantages that it can be well filled with the encapsulant and that a region of the recess serving as a reflector is not reduced in size, compared to conventional components of like design, because of the inventive geometry of the recess.
- the shaded subarea is formed by at least one, or where space-saving is necessary preferably by means of only one, cross sectionally concave bevel of the wall at the front-side margin thereof.
- a housing base body according to the invention is used particularly preferably in semiconductor components provided with a semiconductor chip that emits at least partially UV radiation, such as for example a blue light or UV radiation emitting, nitride compound semiconductor material based light-emitting diode (LED) chip, of the kind which is described for example in WO 01/39282 A2 and which consequently will not be elaborated upon here.
- a semiconductor chip that emits at least partially UV radiation such as for example a blue light or UV radiation emitting, nitride compound semiconductor material based light-emitting diode (LED) chip, of the kind which is described for example in WO 01/39282 A2 and which consequently will not be elaborated upon here.
- Nonride compound semiconductor based means in the present context that the radiation generating epitaxial layer sequence or at least a portion thereof includes a nitride III/V compound semiconductor material, preferably Al n Ga m In l-n-m N, wherein 0 ⁇ n ⁇ 1, 0 ⁇ m ⁇ 1 and n+m ⁇ 1.
- the composition of this material does not necessarily have to conform mathematically exactly to the above formula. Rather, it can comprise one or more dopants or additional constituents that do not substantially alter the characteristic physical properties of one of the Al n Ga m In l-n-m N materials.
- the above formula includes only the essential constituents of the crystal lattice (Al, Ga, In, N), even though these may be partially replaced by trivial amounts of additional substances.
- the encapsulant is preferably based on silicone material and is in particular a silicone resin. Using an encapsulant that has a gel-like consistency can further help to reduce the risk of delamination.
- anchoring elements which are formed at, preferably on, the shaded subarea(s) of the inner side and protrude from the shaded subarea or from the remaining inner side of the recess into the encapsulant.
- These anchoring elements are preferably arranged so that they are distributed evenly on the shaded subarea, that is, at substantially the same distances from one another.
- Suitable anchoring elements are anchoring lugs, knobs or ribs protruding from the shaded subarea.
- the anchoring elements are particularly preferably completely covered, i.e. spanned, by the encapsulant.
- the fill level of the encapsulant inside the recess is in particular so high that the encapsulant completely covers the anchoring elements. This in turn tends to prevent delamination and also facilitates the further processing of the component using conventional pick-and-place devices.
- Such anchoring elements can advantageously also help to cause an encapsulant, such as silicone resin, which is poured into the recess in the liquid state to be drawn up along the anchoring elements due to the forces created by the capillarity of the encapsulating material, thus helping to moisten the subarea(s) and the upper margin of the recess.
- an encapsulant such as silicone resin
- the above-cited object is accordingly achieved in particular by means of a semiconductor component in which the encapsulant forms a sealing strip on at least one shaded subarea that is located at the outer margin of the recess of the housing base body and is at least in substantial part shaded from the radiation emitted by the semiconductor chip, said sealing strip therefore being shaded virtually completely against the radiation from the chip.
- the encapsulant forms a thoroughly shaded sealing ring on a shaded subarea that extends ring-like all the way around the semiconductor chip.
- the rest of the recess is preferably configured as a reflector for the radiation emitted by the semiconductor chip.
- the housing base body is formed on a metallic leadframe from a plastic molding compound, particularly by an injection molding and/or compression molding process.
- the encapsulant can contain admixtures of phosphors that absorb a portion of the radiation emitted by the semiconductor chip and emit radiation having a changed wavelength compared to the absorbed radiation.
- the semiconductor chip can also be provided with a cladding layer containing a phosphor material. LED components capable of emitting mixed-color light or color-matched light can thus be produced in a simple manner. Suitable phosphor materials are described for example in WO 97/50132 and WO 98/12757 A1, whose disclosure content in this regard is hereby incorporated by reference.
- the outermost edge of the upper margin of the recess or shaded subarea is preferably virtually smooth, i.e., devoid of grooves, indentations, shrink holes or the like. This advantageously reduces the risk that the encapsulant will overflow as the recess is being filled.
- the anchoring elements if present, preferably do not extend as far as the outer margin of the recess.
- a component housing (housing base body+encapsulant) according to the invention not only can be used to advantage with radiation emitting components whose semiconductor chip emits in particular at least partially UV radiation, but can also be used to advantage (e.g. increased heat resistance) with radiation detecting components such as photodiode and phototransistor components.
- a component/housing (housing base body+encapsulant) configured according to the present invention makes it possible to implement designs with comparatively tiny dimensions, since the recess comprises the shaded subarea(s) only at the front-side end of the housing base body, that is, immediately at the transition from the inner wall of the recess to the outer front side of the housing base body.
- a further particular advantage is that the “three-phase” boundary line between the housing base body, the encapsulant and the air (or other surrounding atmosphere) is exposed to little or no radiation from the semiconductor chip.
- FIG. 1 is a schematic representation of a sectional view through a first exemplary embodiment of a component according to the invention
- FIG. 2 is a schematic representation of a sectional view through a second exemplary embodiment of a component according to the invention
- FIG. 3 is a schematic representation of a sectional view through a third exemplary embodiment of a component according to the invention.
- FIG. 4 is a schematic representation of a further sectional view through the second exemplary embodiment
- FIG. 5 is a schematic representation of a perspective plan view of the housing base body of the first exemplary embodiment
- FIG. 6 is a schematic representation of a perspective plan view of the housing base body of the third exemplary embodiment.
- Each of the components and housing base bodies schematically depicted in the figures is a surface-mountable so-called sidelooker LED component or a surface-mountable housing base body 3 for such an LED component, comprising an LED chip 1 emitting UV radiation and, where applicable, other types of radiation, for example an InGaN based visible blue light emitting LED chip which intentionally or unintentionally also emits UV radiation.
- an LED chip is described for example in WO 01/39282 A2 and will not be described in more detail herein.
- the component housing and housing base body set forth in this context are also suitable in principle for use with other types of LED chips, as well as for IR emitting components intended in particular for high-temperature applications.
- the LED chip 1 is mounted in a chip region (indicated by the regions 21 bordered by broken lines in FIGS. 1 to 4 ) of the housing base body 3 on an electrical chip connection part of a metallic leadframe 6 and is connected via a bonding wire 5 to a wire connection region of an electrical wire connection part 61 of leadframe 6 that is electrically separated from chip connection part 62 .
- LED chips contacted in other ways such as for example flip-chip-mounted LED chips, in which the anode and cathode contacts are disposed on one side of the chip, facing the leadframe, can also be used in the present case. All that has to be done for this purpose is to adapt the mounting technique.
- an injection-molded or transfer-molded housing base body 3 Disposed on the leadframe 6 is an injection-molded or transfer-molded housing base body 3 , made for example of thermoplastic plastic (e.g. a titanium-oxide or silicon-oxide and/or glass-fiber filled, polyphthalamide based molding compound) and comprising a recess 2 .
- the LED chip 1 is located in the recess 2 and is for example electrically conductively fastened to the chip connection part 62 by means of a conductive glue.
- the recess 2 is bounded laterally by a wall 31 surrounding the semiconductor chip 1 and is at least partially filled with a silicone resin based encapsulant 4 , which covers the semiconductor chip 1 and is well transparent to an electromagnetic radiation emitted by the semiconductor chip 1 .
- the encapsulant 4 includes for example a radiation-transparent, for example clear, gel-like, silicone-based potting material, into which is mixed a phosphor powder 7 , for example a YAG:Ce, ThAG:Ce or ThYAG:Ce based phosphor powder.
- a radiation-transparent, for example clear, gel-like, silicone-based potting material into which is mixed a phosphor powder 7 , for example a YAG:Ce, ThAG:Ce or ThYAG:Ce based phosphor powder.
- phosphor powder 7 for example a YAG:Ce, ThAG:Ce or ThYAG:Ce based phosphor powder.
- phosphors are known for example from WO 98/12757 and WO 01/08452, whose disclosure content in this regard is hereby incorporated by reference.
- the encapsulant in components designed solely to emit primary radiation from the LED chip 1 , can be a clear, gel-like, silicone-based potting material. Alternatively, it can be provided with diffuser particles and rendered turbid thereby.
- An inner side 32 bounding recess 2 comprises, at the front-side end of wall 31 , a chamfer 331 that slopes downward toward the interior of recess 2 , i.e. toward semiconductor chip 1 , and extends all the way around the recess. As viewed looking down on the front side of the semiconductor component, this chamfer 331 creates a shaded subarea 33 which extends ring-like all the way around the semiconductor chip 1 , and which is in shadow as viewed from all front-side points of the semiconductor chip 1 and which is at least partially covered by encapsulant 4 all the way around the semiconductor chip 1 .
- the front-side margin of the recess is configured as funnel-like. The shaded subarea is simultaneously the front-side end face of wall 31 .
- the second exemplary embodiment differs from the above-described first exemplary embodiment particularly in that the annularly extending shaded subarea 33 of inner side 32 is formed by a cross-sectionally concave bevel 332 of the front-side end face of wall 31 .
- the third exemplary embodiment, illustrated in FIGS. 2 and 6 differs from the above-described first exemplary embodiment particularly in that a plurality of anchoring elements 24 , here in the form of anchoring knobs, are formed, evenly distributed around recess 2 , at annularly extending shaded subarea 33 .
- These anchoring knobs protrude from shaded subarea 33 into encapsulant 4 but do not pass all the way through it, that is, they are completely covered by encapsulant 4 .
- the encapsulant extends all the way around behind anchoring elements 24 on shaded subarea 33 .
- the housing base body 3 is preferably formed as one piece with the anchoring elements 24 and is preferably fabricated in a single injection molding or compression molding operation.
- Housing base bodies and encapsulants in accordance with the exemplary embodiments can also be used for radiation receiving semiconductor chips, such as photodiode chips.
- a photodiode chip can then be used in place of the LED chip 1 .
- the design according to the invention is also suitable for use with laser diode components and detector components and in high-temperature applications.
Landscapes
- Led Device Packages (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
- The invention relates to an optoelectronic semiconductor component, particularly to an electromagnetic radiation emitting semiconductor component according to the preamble of
Claim 1 and to a housing base body according to the preamble of Claim 19. - It relates in particular to a surface-mountable optoelectronic component, particularly leadframe-based, in which the semiconductor chip is disposed in a recess of a housing base body and there fastened. The housing base body is preferably prefabricated before the semiconductor chip is mounted in the recess.
- Such semiconductor components are known for example from Siemens Components 29 (1991),
Volume 4, pages 147-149. The encapsulant is conventionally for example an epoxy-resin-based potting material. However, such potting materials are often susceptible to UV radiation. They yellow relatively quickly under the effect of UV radiation and consequently reduce light output from the component. - To improve the UV resistance of radiation emitting optoelectronic semiconductor components, it has been proposed to use encapsulants based on or comprised of silicone resin. Such encapsulants do not yellow under the effect of short-wave radiation, or do so at a sufficiently slow rate.
- A problem with encapsulants of this kind, however, is that the bond they form with the materials conventionally used for the housing base body (for example, a polyphthalamide-based thermoplastic material) is not sufficiently resistant to ageing, especially under UV exposure, as is the case for example with epoxy resin. As a result, when such an encapsulant is used in conventional housing designs, as described for example in Siemens Components 29 (1991),
Volume 4, pages 147 to 149, there is an increased risk of delamination between the housing base body and the encapsulant, beginning at the upper margin of the recess and propagating on into it. In the worst case, this can lead to complete detachment of the chip encapsulant from the housing base body. - The object underlying the present invention is to provide a semiconductor component and a housing base body respectively of the initially cited kinds, particularly a surface-mountable semiconductor component or a surface-mountable housing base body respectively of the initially cited kinds, which affords a reduced risk of delamination, particularly complete delamination between the encapsulant and the housing base body. In particular, a housing base body is to be provided that is suitable for greatly miniaturized optoelectronic housing designs, particularly for greatly miniaturized light-emitting diode and photodiode designs.
- This object is achieved by means of, respectively, a semiconductor component having the features of
Claim 1 and a housing base body having the features of Claim 19. - Advantageous embodiments and improvements of the semiconductor component and the housing base body are the subject matter of
Claims 2 to 18 and 20 to 30, respectively. - In the present context, the “front side” of the semiconductor component or the housing base body is always to be understood as that outer surface which is to be seen when looking down on the semiconductor component from its direction of emission, hence the surface from which the recess penetrates into the housing base body and through which electromagnetic radiation generated by the semiconductor chip is therefore emitted.
- In a semiconductor component according to the invention, a wall bounding the recess is shaped such that there are formed on said wall, as viewed looking down on the front side of the semiconductor component,
- i) plural shaded subareas arranged around the semiconductor chip,
- ii) at least one shaded subarea that extends at least part of the way, preferably all the way, around the semiconductor chip.
- “Shaded” means herein particularly that the subarea(s) concerned is (are) in shadow as viewed from substantially any point in a radiation emitting region of the radiation emitting semiconductor chip and is (are) at least partially covered by encapsulant and from which the encapsulant extends to the semiconductor chip and covers it.
- In a particularly preferred semiconductor component and, respectively, a particularly preferred housing base body according to the invention, a wall bounding the recess is shaped such that as viewed looking down on the front side of the semiconductor component, a shaded subarea is formed which extends ring-like all the way around the semiconductor chip, and which in particular is in shadow as viewed from substantially any point in a radiation emitting region of the radiation emitting semiconductor chip and which is at least partially covered by encapsulant all the way around the semiconductor chip and from which the encapsulant extends to the semiconductor chip and covers it.
- The shaded subarea extends particularly preferably in a funnel-like manner throughout, from the front side of the component toward the semiconductor chip, thereby causing the recess to taper toward the semiconductor chip.
- The shaded subarea is particularly preferably disposed at the top margin of the wall, in such fashion that the three-phase boundary line between the air, the encapsulant and the housing base body extends entirely within the shaded subarea and therefore is impinged on not at all, or to a sufficiently reduced extent (for example, due to reflection from the front side of the encapsulant), by radiation that has originated in the semiconductor chip and is undesirable at this location.
- The at least one shaded subarea is preferably formed at the margin of the recess with the front side of the housing base body, particularly at the front-side end face of the wall, or itself constitutes the front-side end face of the wall. This advantageously makes it possible to implement the shaded subarea and thus the component as a whole in an extremely space-saving manner without having to reduce the size of the (reflecting) recess in comparison to conventional components with no UV problems or epoxy encapsulant.
- The at least one shaded subarea can advantageously be formed in a particularly technically simple manner by means of at least one, or where space-saving is necessary preferably by means of only one, chamfer provided at the front-side margin of the wall and sloping toward the recess. In this case, the front-side margin of the recess is configured in the manner of a funnel directed toward the semiconductor chip. In one advantageous embodiment, the end face of the wall is configured as at least partially funnel-like over its entire width and is therefore to be considered at least partially as part of the recess.
- A shaded subarea that is configured as funnel-like throughout, as is made possible by an inventive configuration of the housing base body, provides the particular advantages that it can be well filled with the encapsulant and that a region of the recess serving as a reflector is not reduced in size, compared to conventional components of like design, because of the inventive geometry of the recess.
- In another advantageous configuration, the shaded subarea is formed by at least one, or where space-saving is necessary preferably by means of only one, cross sectionally concave bevel of the wall at the front-side margin thereof. By virtue of this configuration, a shaded subarea can be obtained even in a housing base body having a larger recess and radiation that strikes the wall at a low angle.
- A housing base body according to the invention is used particularly preferably in semiconductor components provided with a semiconductor chip that emits at least partially UV radiation, such as for example a blue light or UV radiation emitting, nitride compound semiconductor material based light-emitting diode (LED) chip, of the kind which is described for example in WO 01/39282 A2 and which consequently will not be elaborated upon here.
- “Nitride compound semiconductor based” means in the present context that the radiation generating epitaxial layer sequence or at least a portion thereof includes a nitride III/V compound semiconductor material, preferably AlnGamInl-n-mN, wherein 0≦n≦1, 0≦m≦1 and n+m≦1. The composition of this material does not necessarily have to conform mathematically exactly to the above formula. Rather, it can comprise one or more dopants or additional constituents that do not substantially alter the characteristic physical properties of one of the AlnGamInl-n-mN materials. For the sake of simplicity, however, the above formula includes only the essential constituents of the crystal lattice (Al, Ga, In, N), even though these may be partially replaced by trivial amounts of additional substances.
- The encapsulant is preferably based on silicone material and is in particular a silicone resin. Using an encapsulant that has a gel-like consistency can further help to reduce the risk of delamination.
- With a view toward further reducing the risk of delamination, it can be advantageous to provide anchoring elements, which are formed at, preferably on, the shaded subarea(s) of the inner side and protrude from the shaded subarea or from the remaining inner side of the recess into the encapsulant. These anchoring elements are preferably arranged so that they are distributed evenly on the shaded subarea, that is, at substantially the same distances from one another.
- Suitable anchoring elements are anchoring lugs, knobs or ribs protruding from the shaded subarea. The anchoring elements are particularly preferably completely covered, i.e. spanned, by the encapsulant. To this end, the fill level of the encapsulant inside the recess is in particular so high that the encapsulant completely covers the anchoring elements. This in turn tends to prevent delamination and also facilitates the further processing of the component using conventional pick-and-place devices.
- Such anchoring elements can advantageously also help to cause an encapsulant, such as silicone resin, which is poured into the recess in the liquid state to be drawn up along the anchoring elements due to the forces created by the capillarity of the encapsulating material, thus helping to moisten the subarea(s) and the upper margin of the recess.
- The above-cited object is accordingly achieved in particular by means of a semiconductor component in which the encapsulant forms a sealing strip on at least one shaded subarea that is located at the outer margin of the recess of the housing base body and is at least in substantial part shaded from the radiation emitted by the semiconductor chip, said sealing strip therefore being shaded virtually completely against the radiation from the chip. Particularly preferably, the encapsulant forms a thoroughly shaded sealing ring on a shaded subarea that extends ring-like all the way around the semiconductor chip.
- The rest of the recess is preferably configured as a reflector for the radiation emitted by the semiconductor chip.
- In a particularly preferred embodiment, the housing base body is formed on a metallic leadframe from a plastic molding compound, particularly by an injection molding and/or compression molding process.
- The encapsulant can contain admixtures of phosphors that absorb a portion of the radiation emitted by the semiconductor chip and emit radiation having a changed wavelength compared to the absorbed radiation. The semiconductor chip can also be provided with a cladding layer containing a phosphor material. LED components capable of emitting mixed-color light or color-matched light can thus be produced in a simple manner. Suitable phosphor materials are described for example in WO 97/50132 and WO 98/12757 A1, whose disclosure content in this regard is hereby incorporated by reference.
- The outermost edge of the upper margin of the recess or shaded subarea is preferably virtually smooth, i.e., devoid of grooves, indentations, shrink holes or the like. This advantageously reduces the risk that the encapsulant will overflow as the recess is being filled. To ensure a smooth edge, the anchoring elements, if present, preferably do not extend as far as the outer margin of the recess.
- The foregoing statements regarding the components according to the invention apply analogously to the housing base body according to the invention.
- A component housing (housing base body+encapsulant) according to the invention not only can be used to advantage with radiation emitting components whose semiconductor chip emits in particular at least partially UV radiation, but can also be used to advantage (e.g. increased heat resistance) with radiation detecting components such as photodiode and phototransistor components.
- A component/housing (housing base body+encapsulant) configured according to the present invention makes it possible to implement designs with comparatively tiny dimensions, since the recess comprises the shaded subarea(s) only at the front-side end of the housing base body, that is, immediately at the transition from the inner wall of the recess to the outer front side of the housing base body.
- A further particular advantage is that the “three-phase” boundary line between the housing base body, the encapsulant and the air (or other surrounding atmosphere) is exposed to little or no radiation from the semiconductor chip.
- Further advantages and advantageous improvements of the component and the housing base body will become apparent from the following exemplary embodiments, described hereinafter with reference to FIGS. 1 to 6. Therein:
-
FIG. 1 is a schematic representation of a sectional view through a first exemplary embodiment of a component according to the invention, -
FIG. 2 is a schematic representation of a sectional view through a second exemplary embodiment of a component according to the invention, -
FIG. 3 is a schematic representation of a sectional view through a third exemplary embodiment of a component according to the invention, -
FIG. 4 is a schematic representation of a further sectional view through the second exemplary embodiment, -
FIG. 5 is a schematic representation of a perspective plan view of the housing base body of the first exemplary embodiment, -
FIG. 6 is a schematic representation of a perspective plan view of the housing base body of the third exemplary embodiment. - In the figures, elements of the same kind or identically acting elements of the exemplary embodiments are each identified in the same respective fashion and are provided with the same respective reference numerals. The figures are basically not to be considered true-to-scale representations of real devices according to the invention. Rather, for purposes of better understanding, some elements of the exemplary embodiments in the figures may be depicted as exaggeratedly large or in size ratios that do not accord with reality.
- Each of the components and housing base bodies schematically depicted in the figures is a surface-mountable so-called sidelooker LED component or a surface-mountable
housing base body 3 for such an LED component, comprising anLED chip 1 emitting UV radiation and, where applicable, other types of radiation, for example an InGaN based visible blue light emitting LED chip which intentionally or unintentionally also emits UV radiation. Such an LED chip is described for example in WO 01/39282 A2 and will not be described in more detail herein. - The component housing and housing base body set forth in this context are also suitable in principle for use with other types of LED chips, as well as for IR emitting components intended in particular for high-temperature applications.
- The
LED chip 1 is mounted in a chip region (indicated by theregions 21 bordered by broken lines in FIGS. 1 to 4) of thehousing base body 3 on an electrical chip connection part of ametallic leadframe 6 and is connected via abonding wire 5 to a wire connection region of an electricalwire connection part 61 ofleadframe 6 that is electrically separated fromchip connection part 62. - LED chips contacted in other ways, such as for example flip-chip-mounted LED chips, in which the anode and cathode contacts are disposed on one side of the chip, facing the leadframe, can also be used in the present case. All that has to be done for this purpose is to adapt the mounting technique.
- Disposed on the
leadframe 6 is an injection-molded or transfer-moldedhousing base body 3, made for example of thermoplastic plastic (e.g. a titanium-oxide or silicon-oxide and/or glass-fiber filled, polyphthalamide based molding compound) and comprising arecess 2. TheLED chip 1 is located in therecess 2 and is for example electrically conductively fastened to thechip connection part 62 by means of a conductive glue. - The
recess 2 is bounded laterally by awall 31 surrounding thesemiconductor chip 1 and is at least partially filled with a silicone resin basedencapsulant 4, which covers thesemiconductor chip 1 and is well transparent to an electromagnetic radiation emitted by thesemiconductor chip 1. - The
encapsulant 4 includes for example a radiation-transparent, for example clear, gel-like, silicone-based potting material, into which is mixed a phosphor powder 7, for example a YAG:Ce, ThAG:Ce or ThYAG:Ce based phosphor powder. Such phosphors are known for example from WO 98/12757 and WO 01/08452, whose disclosure content in this regard is hereby incorporated by reference. - In components designed solely to emit primary radiation from the
LED chip 1, the encapsulant can be a clear, gel-like, silicone-based potting material. Alternatively, it can be provided with diffuser particles and rendered turbid thereby. - An
inner side 32bounding recess 2 comprises, at the front-side end ofwall 31, achamfer 331 that slopes downward toward the interior ofrecess 2, i.e. towardsemiconductor chip 1, and extends all the way around the recess. As viewed looking down on the front side of the semiconductor component, thischamfer 331 creates a shadedsubarea 33 which extends ring-like all the way around thesemiconductor chip 1, and which is in shadow as viewed from all front-side points of thesemiconductor chip 1 and which is at least partially covered byencapsulant 4 all the way around thesemiconductor chip 1. The front-side margin of the recess is configured as funnel-like. The shaded subarea is simultaneously the front-side end face ofwall 31. - The second exemplary embodiment, as illustrated in
FIGS. 2 and 4 , differs from the above-described first exemplary embodiment particularly in that the annularly extending shadedsubarea 33 ofinner side 32 is formed by a cross-sectionallyconcave bevel 332 of the front-side end face ofwall 31. - The third exemplary embodiment, illustrated in
FIGS. 2 and 6 , differs from the above-described first exemplary embodiment particularly in that a plurality of anchoringelements 24, here in the form of anchoring knobs, are formed, evenly distributed aroundrecess 2, at annularly extending shadedsubarea 33. These anchoring knobs protrude from shadedsubarea 33 intoencapsulant 4 but do not pass all the way through it, that is, they are completely covered byencapsulant 4. Viewed from thesemiconductor chip 1, the encapsulant extends all the way around behind anchoringelements 24 on shadedsubarea 33. - In all the exemplary embodiments, the
housing base body 3 is preferably formed as one piece with the anchoringelements 24 and is preferably fabricated in a single injection molding or compression molding operation. - Housing base bodies and encapsulants in accordance with the exemplary embodiments can also be used for radiation receiving semiconductor chips, such as photodiode chips. A photodiode chip can then be used in place of the
LED chip 1. The design according to the invention is also suitable for use with laser diode components and detector components and in high-temperature applications. - The explanation of the technical teaching according to the invention on the basis of the exemplary embodiment is not, of course, to be construed as limiting the invention to those embodiments. Rather, for example all components and housing base bodies comprising a recess for receiving a semiconductor chip and a circumferential chamfer or the like disposed on the front-side margin of the recess and shaded from the radiation emitted by the semiconductor chip make use of the technical teaching of the invention.
Claims (30)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102004026858 | 2004-05-31 | ||
DE102004026858.4 | 2004-05-31 | ||
DE102004026858 | 2004-05-31 | ||
DE102004040468.2A DE102004040468B4 (en) | 2004-05-31 | 2004-08-20 | Optoelectronic semiconductor component and housing base body for such a component |
DE102004040468.2 | 2004-08-20 | ||
DE102004040468 | 2004-08-20 | ||
PCT/DE2005/000877 WO2005117071A2 (en) | 2004-05-31 | 2005-05-12 | Optoelectronic semiconductor component and housing base for such a component |
Publications (2)
Publication Number | Publication Date |
---|---|
US20080012033A1 true US20080012033A1 (en) | 2008-01-17 |
US8975646B2 US8975646B2 (en) | 2015-03-10 |
Family
ID=35433295
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/597,971 Active 2027-05-24 US8975646B2 (en) | 2004-05-31 | 2005-05-12 | Optoelectronic semiconductor component and housing base for such a component |
Country Status (4)
Country | Link |
---|---|
US (1) | US8975646B2 (en) |
EP (1) | EP1751806B1 (en) |
JP (1) | JP5366399B2 (en) |
WO (1) | WO2005117071A2 (en) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090159900A1 (en) * | 2007-12-21 | 2009-06-25 | Avagon Tewchnologies General Ip (Singapore) Pte. Ltd. | Infrared Proximity Sensor Package with Reduced Crosstalk |
US20100282951A1 (en) * | 2009-05-08 | 2010-11-11 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Metal Shield and Housing for Optical Proximity Sensor with Increased Resistance to Mechanical Deformation |
US20100327164A1 (en) * | 2009-06-30 | 2010-12-30 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Optical Proximity Sensor Package with Molded Infrared Light Rejection Barrier and Infrared Pass Components |
US20110057129A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Package-on-Package (POP) Optical Proximity Sensor |
US20110057108A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Compact Optical Proximity Sensor with Ball Grid Array and Windowed Substrate |
US20110057104A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Miniaturized Optical Proximity Sensor |
US20110121181A1 (en) * | 2009-11-23 | 2011-05-26 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Proximity Sensor Package with Improved Crosstalk Isolation |
US20110204233A1 (en) * | 2009-06-30 | 2011-08-25 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Attenuating or Blocking Layer in Optical Proximity Sensor |
US20120080711A1 (en) * | 2010-09-30 | 2012-04-05 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20130003381A1 (en) * | 2011-06-29 | 2013-01-03 | Toyoda Gosei Co., Ltd. | Light emitting device |
US8841597B2 (en) | 2010-12-27 | 2014-09-23 | Avago Technologies Ip (Singapore) Pte. Ltd. | Housing for optical proximity sensor |
EP2393114A3 (en) * | 2010-06-01 | 2015-02-18 | LG Innotek Co., Ltd. | Light emitting device package |
US9223076B2 (en) | 2011-04-14 | 2015-12-29 | Lg Innotek Co., Ltd. | Semiconductor light emitting device package |
US9525093B2 (en) | 2009-06-30 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
US9793442B2 (en) | 2013-11-08 | 2017-10-17 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
TWI663750B (en) * | 2011-11-24 | 2019-06-21 | 大陸商惠州科銳半導體照明有限公司 | Water resistant led devices and an led display including same |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1914809A1 (en) * | 2006-10-20 | 2008-04-23 | Tridonic Optoelectronics GmbH | Cover for optoelectronic components |
KR100831078B1 (en) * | 2006-10-25 | 2008-05-20 | 주식회사 서호 | LED lead frame and manufacturing method |
JP6107229B2 (en) * | 2013-02-27 | 2017-04-05 | 日亜化学工業株式会社 | Light emitting device |
DE102017109079B4 (en) | 2017-04-27 | 2024-02-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic component and component with such a component |
Citations (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4538168A (en) * | 1981-09-30 | 1985-08-27 | Unitrode Corporation | High power semiconductor package |
US4727457A (en) * | 1986-01-24 | 1988-02-23 | U.S. Philips Corporation | Surface-mounted optoelectronic device |
US5040868A (en) * | 1989-05-31 | 1991-08-20 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
US5043716A (en) * | 1988-07-14 | 1991-08-27 | Adaptive Micro Systems, Inc. | Electronic display with lens matrix |
US5173766A (en) * | 1990-06-25 | 1992-12-22 | Lsi Logic Corporation | Semiconductor device package and method of making such a package |
US5331512A (en) * | 1992-04-16 | 1994-07-19 | Orton Kevin R | Surface-mount LED |
US5530285A (en) * | 1994-02-18 | 1996-06-25 | Siemens Aktiengesellschaft | Low-impedance surface-mount device |
US5545359A (en) * | 1994-08-11 | 1996-08-13 | Motorola | Method of making a plastic molded optoelectronic interface |
US5553028A (en) * | 1995-06-23 | 1996-09-03 | Micron Technology, Inc. | Single P-sense AMP circuit using depletion isolation devices |
US5614131A (en) * | 1995-05-01 | 1997-03-25 | Motorola, Inc. | Method of making an optoelectronic device |
US5686172A (en) * | 1994-11-30 | 1997-11-11 | Mitsubishi Gas Chemical Company, Inc. | Metal-foil-clad composite ceramic board and process for the production thereof |
US5821615A (en) * | 1995-12-06 | 1998-10-13 | Lg Semicon Co., Ltd. | Semiconductor chip package having clip-type outlead and fabrication method of same |
US6052500A (en) * | 1996-12-03 | 2000-04-18 | Mitsubishi Gas Chemical Company, Inc. | Optical waveguide device for connections without optical axis adjustment |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US6103398A (en) * | 1997-05-22 | 2000-08-15 | Motorola, Inc. | Optoelectronic device having an overfill material and method of assembly |
US20010010371A1 (en) * | 1998-11-06 | 2001-08-02 | Carey Julian A. | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US20020004251A1 (en) * | 1999-03-15 | 2002-01-10 | Roberts John K. | Method of making a semiconductor radiation emitter package |
US6440877B1 (en) * | 1999-06-28 | 2002-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
US20020161669A1 (en) * | 2001-04-13 | 2002-10-31 | Seiko Epson Corporation | Apparatus of providing site for selection and order of goods on network |
US20020163302A1 (en) * | 2001-04-09 | 2002-11-07 | Koichi Nitta | Light emitting device |
US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
US20030020077A1 (en) * | 2001-07-25 | 2003-01-30 | Citizen Electronics Co., Ltd. | Light emitting diode device |
US20030080341A1 (en) * | 2001-01-24 | 2003-05-01 | Kensho Sakano | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
US20030155624A1 (en) * | 1995-09-29 | 2003-08-21 | Karlheinz Arndt | Optoelectronic semiconductor component |
US6610563B1 (en) * | 1997-12-15 | 2003-08-26 | Osram Opto Semiconductors Gmbh & Co. Ohg | Surface mounting optoelectronic component and method for producing same |
US6624491B2 (en) * | 1998-06-30 | 2003-09-23 | Osram Opto Semiconductors Gmbh & Co. | Diode housing |
US6639354B1 (en) * | 1999-07-23 | 2003-10-28 | Sony Corporation | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same |
US20030230751A1 (en) * | 2002-05-31 | 2003-12-18 | Stanley Electric Co., Ltd. | Light-emitting device and manufacturing method thereof |
US6669866B1 (en) * | 1999-07-23 | 2003-12-30 | Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh | Luminous substance for a light source and light source associates therewith |
US20040016873A1 (en) * | 2002-07-25 | 2004-01-29 | Matsushita Electric Works, Ltd. | Photoelectric device-part |
US20040065894A1 (en) * | 2001-08-28 | 2004-04-08 | Takuma Hashimoto | Light emitting device using led |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US20040089957A1 (en) * | 2002-11-08 | 2004-05-13 | Yoshinori Shizuno | Semiconductor device with improved design freedom of external terminal |
US6897490B2 (en) * | 2000-04-26 | 2005-05-24 | Osram Opto Semiconductors Gmbh | Radiation emitting semiconductor component with luminescent conversion element |
US6943433B2 (en) * | 2002-03-06 | 2005-09-13 | Nichia Corporation | Semiconductor device and manufacturing method for same |
US20060022215A1 (en) * | 2003-01-30 | 2006-02-02 | Karlheinz Arndt | Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component |
US7078732B1 (en) * | 1996-06-26 | 2006-07-18 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US7727457B2 (en) * | 2002-07-02 | 2010-06-01 | Warrior Sports, Inc. | Lacrosse head and method of forming same |
Family Cites Families (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5785273A (en) | 1980-11-17 | 1982-05-27 | Toshiba Corp | Photo-semiconductor device |
DE3279463D1 (en) | 1981-06-12 | 1989-03-30 | Motorola Inc | Led having self-aligned lens |
DE3128187A1 (en) | 1981-07-16 | 1983-02-03 | Joachim 8068 Pfaffenhofen Sieg | OPTO-ELECTRONIC COMPONENT |
JPS6020587A (en) | 1983-07-14 | 1985-02-01 | Sanyo Electric Co Ltd | Manufacturing method of optical coupler |
GB2206444A (en) | 1987-06-10 | 1989-01-05 | Yue Wen Cheng | Light emitting diode |
DE3719338A1 (en) * | 1987-06-10 | 1988-12-29 | Yue Wen Cheng | LED DISPLAY DEVICE |
JPH0210606A (en) | 1988-06-28 | 1990-01-16 | Tdk Corp | Conducting paste and thin film component using same |
EP0374121A3 (en) | 1988-12-16 | 1991-01-16 | RSF-Elektronik Gesellschaft m.b.H. | Light-emitting diode |
JPH0832120A (en) | 1994-07-19 | 1996-02-02 | Rohm Co Ltd | Surface emission type display |
JPH0927643A (en) | 1995-07-13 | 1997-01-28 | Stanley Electric Co Ltd | Light receiving / light emitting element |
JPH0983018A (en) | 1995-09-11 | 1997-03-28 | Nippon Denyo Kk | Light emitting diode unit |
DE19535777A1 (en) | 1995-09-26 | 1997-03-27 | Siemens Ag | Optoelectronic semiconductor component and method for producing it |
DE19536454B4 (en) | 1995-09-29 | 2006-03-09 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor device |
JPH10190066A (en) | 1996-12-27 | 1998-07-21 | Nichia Chem Ind Ltd | Light emitting diode and LED display device using the same |
JP3492178B2 (en) | 1997-01-15 | 2004-02-03 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
JP3316838B2 (en) * | 1997-01-31 | 2002-08-19 | 日亜化学工業株式会社 | Light emitting device |
JPH10240165A (en) * | 1997-02-27 | 1998-09-11 | Toyoda Gosei Co Ltd | Light emitting diode display device |
JP3228321B2 (en) | 1997-08-29 | 2001-11-12 | 日亜化学工業株式会社 | Chip type LED |
JP2000353827A (en) | 1999-06-09 | 2000-12-19 | Sanyo Electric Co Ltd | Hybrid integrated circuit device |
US6455398B1 (en) | 1999-07-16 | 2002-09-24 | Massachusetts Institute Of Technology | Silicon on III-V semiconductor bonding for monolithic optoelectronic integration |
DE19947044B9 (en) | 1999-09-30 | 2007-09-13 | Osram Opto Semiconductors Gmbh | Surface-mountable optoelectronic component with reflector and method for producing the same |
JP4645867B2 (en) | 2000-08-02 | 2011-03-09 | ソニー株式会社 | DIGITAL SIGNAL PROCESSING METHOD, LEARNING METHOD, DEVICE THEREOF, AND PROGRAM STORAGE MEDIUM |
CN1129968C (en) | 2000-11-23 | 2003-12-03 | 诠兴开发科技股份有限公司 | Packaging method of light emitting diode |
DE10122002A1 (en) | 2001-05-07 | 2002-11-21 | Osram Opto Semiconductors Gmbh | Housing for an optoelectronic component and optoelectronic component |
JP2003110149A (en) | 2001-09-28 | 2003-04-11 | Matsushita Electric Ind Co Ltd | Light-emitting unit and illuminator using the light- emitting unit |
JP2004003886A (en) | 2002-05-31 | 2004-01-08 | Matsushita Electric Works Ltd | Sensor package |
JP4241184B2 (en) * | 2002-07-25 | 2009-03-18 | パナソニック電工株式会社 | Photoelectric component |
JP4360595B2 (en) * | 2002-10-18 | 2009-11-11 | ペルノックス株式会社 | Photoelectric conversion device |
-
2005
- 2005-05-12 US US11/597,971 patent/US8975646B2/en active Active
- 2005-05-12 WO PCT/DE2005/000877 patent/WO2005117071A2/en active Application Filing
- 2005-05-12 JP JP2007513672A patent/JP5366399B2/en active Active
- 2005-05-12 EP EP05748711.8A patent/EP1751806B1/en active Active
Patent Citations (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4538168A (en) * | 1981-09-30 | 1985-08-27 | Unitrode Corporation | High power semiconductor package |
US4727457A (en) * | 1986-01-24 | 1988-02-23 | U.S. Philips Corporation | Surface-mounted optoelectronic device |
US5043716A (en) * | 1988-07-14 | 1991-08-27 | Adaptive Micro Systems, Inc. | Electronic display with lens matrix |
US5040868A (en) * | 1989-05-31 | 1991-08-20 | Siemens Aktiengesellschaft | Surface-mountable opto-component |
US5173766A (en) * | 1990-06-25 | 1992-12-22 | Lsi Logic Corporation | Semiconductor device package and method of making such a package |
US5331512A (en) * | 1992-04-16 | 1994-07-19 | Orton Kevin R | Surface-mount LED |
US5530285A (en) * | 1994-02-18 | 1996-06-25 | Siemens Aktiengesellschaft | Low-impedance surface-mount device |
US5545359A (en) * | 1994-08-11 | 1996-08-13 | Motorola | Method of making a plastic molded optoelectronic interface |
US5686172A (en) * | 1994-11-30 | 1997-11-11 | Mitsubishi Gas Chemical Company, Inc. | Metal-foil-clad composite ceramic board and process for the production thereof |
US5614131A (en) * | 1995-05-01 | 1997-03-25 | Motorola, Inc. | Method of making an optoelectronic device |
US5553028A (en) * | 1995-06-23 | 1996-09-03 | Micron Technology, Inc. | Single P-sense AMP circuit using depletion isolation devices |
US20030155624A1 (en) * | 1995-09-29 | 2003-08-21 | Karlheinz Arndt | Optoelectronic semiconductor component |
US5821615A (en) * | 1995-12-06 | 1998-10-13 | Lg Semicon Co., Ltd. | Semiconductor chip package having clip-type outlead and fabrication method of same |
US7078732B1 (en) * | 1996-06-26 | 2006-07-18 | Osram Gmbh | Light-radiating semiconductor component with a luminescence conversion element |
US6066861A (en) * | 1996-09-20 | 2000-05-23 | Siemens Aktiengesellschaft | Wavelength-converting casting composition and its use |
US6052500A (en) * | 1996-12-03 | 2000-04-18 | Mitsubishi Gas Chemical Company, Inc. | Optical waveguide device for connections without optical axis adjustment |
US6274890B1 (en) * | 1997-01-15 | 2001-08-14 | Kabushiki Kaisha Toshiba | Semiconductor light emitting device and its manufacturing method |
US6103398A (en) * | 1997-05-22 | 2000-08-15 | Motorola, Inc. | Optoelectronic device having an overfill material and method of assembly |
US6060729A (en) * | 1997-11-26 | 2000-05-09 | Rohm Co., Ltd. | Light-emitting device |
US6946714B2 (en) * | 1997-12-15 | 2005-09-20 | Osram Gmbh | Surface mounting optoelectronic component and method for producing same |
US6610563B1 (en) * | 1997-12-15 | 2003-08-26 | Osram Opto Semiconductors Gmbh & Co. Ohg | Surface mounting optoelectronic component and method for producing same |
US6624491B2 (en) * | 1998-06-30 | 2003-09-23 | Osram Opto Semiconductors Gmbh & Co. | Diode housing |
US6274924B1 (en) * | 1998-11-05 | 2001-08-14 | Lumileds Lighting, U.S. Llc | Surface mountable LED package |
US20010010371A1 (en) * | 1998-11-06 | 2001-08-02 | Carey Julian A. | High stability optical encapsulation and packaging for light-emitting diodes in the green, blue, and near UV range |
US20020004251A1 (en) * | 1999-03-15 | 2002-01-10 | Roberts John K. | Method of making a semiconductor radiation emitter package |
US6440877B1 (en) * | 1999-06-28 | 2002-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
US6639354B1 (en) * | 1999-07-23 | 2003-10-28 | Sony Corporation | Light emitting device, production method thereof, and light emitting apparatus and display unit using the same |
US6669866B1 (en) * | 1999-07-23 | 2003-12-30 | Patent-Treuhand-Gesellschaft Fuer Elektrische Gluehlampen Mbh | Luminous substance for a light source and light source associates therewith |
US6897490B2 (en) * | 2000-04-26 | 2005-05-24 | Osram Opto Semiconductors Gmbh | Radiation emitting semiconductor component with luminescent conversion element |
US20030080341A1 (en) * | 2001-01-24 | 2003-05-01 | Kensho Sakano | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
US6960878B2 (en) * | 2001-01-24 | 2005-11-01 | Nichia Corporation | Light emitting diode, optical semiconductor element and epoxy resin composition suitable for optical semiconductor element and production methods therefor |
US20020163302A1 (en) * | 2001-04-09 | 2002-11-07 | Koichi Nitta | Light emitting device |
US20020161669A1 (en) * | 2001-04-13 | 2002-10-31 | Seiko Epson Corporation | Apparatus of providing site for selection and order of goods on network |
US20020185965A1 (en) * | 2001-06-11 | 2002-12-12 | Lumileds Lighting, U.S., Llc | Phosphor-converted light emitting device |
US20030020077A1 (en) * | 2001-07-25 | 2003-01-30 | Citizen Electronics Co., Ltd. | Light emitting diode device |
US20040065894A1 (en) * | 2001-08-28 | 2004-04-08 | Takuma Hashimoto | Light emitting device using led |
US6943433B2 (en) * | 2002-03-06 | 2005-09-13 | Nichia Corporation | Semiconductor device and manufacturing method for same |
US20030230751A1 (en) * | 2002-05-31 | 2003-12-18 | Stanley Electric Co., Ltd. | Light-emitting device and manufacturing method thereof |
US7727457B2 (en) * | 2002-07-02 | 2010-06-01 | Warrior Sports, Inc. | Lacrosse head and method of forming same |
US20040016873A1 (en) * | 2002-07-25 | 2004-01-29 | Matsushita Electric Works, Ltd. | Photoelectric device-part |
US20040079957A1 (en) * | 2002-09-04 | 2004-04-29 | Andrews Peter Scott | Power surface mount light emitting die package |
US20040089957A1 (en) * | 2002-11-08 | 2004-05-13 | Yoshinori Shizuno | Semiconductor device with improved design freedom of external terminal |
US20060022215A1 (en) * | 2003-01-30 | 2006-02-02 | Karlheinz Arndt | Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component |
Cited By (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8217482B2 (en) * | 2007-12-21 | 2012-07-10 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with reduced crosstalk |
US20090159900A1 (en) * | 2007-12-21 | 2009-06-25 | Avagon Tewchnologies General Ip (Singapore) Pte. Ltd. | Infrared Proximity Sensor Package with Reduced Crosstalk |
US20100282951A1 (en) * | 2009-05-08 | 2010-11-11 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Metal Shield and Housing for Optical Proximity Sensor with Increased Resistance to Mechanical Deformation |
US8420999B2 (en) | 2009-05-08 | 2013-04-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Metal shield and housing for optical proximity sensor with increased resistance to mechanical deformation |
US20100327164A1 (en) * | 2009-06-30 | 2010-12-30 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Optical Proximity Sensor Package with Molded Infrared Light Rejection Barrier and Infrared Pass Components |
US9525093B2 (en) | 2009-06-30 | 2016-12-20 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
US8957380B2 (en) | 2009-06-30 | 2015-02-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared attenuating or blocking layer in optical proximity sensor |
US8779361B2 (en) | 2009-06-30 | 2014-07-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Optical proximity sensor package with molded infrared light rejection barrier and infrared pass components |
US20110204233A1 (en) * | 2009-06-30 | 2011-08-25 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Attenuating or Blocking Layer in Optical Proximity Sensor |
US8350216B2 (en) | 2009-09-10 | 2013-01-08 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Miniaturized optical proximity sensor |
US20110057104A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Miniaturized Optical Proximity Sensor |
US20110057129A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Package-on-Package (POP) Optical Proximity Sensor |
US20110057108A1 (en) * | 2009-09-10 | 2011-03-10 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Compact Optical Proximity Sensor with Ball Grid Array and Windowed Substrate |
US8143608B2 (en) | 2009-09-10 | 2012-03-27 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Package-on-package (POP) optical proximity sensor |
US8716665B2 (en) | 2009-09-10 | 2014-05-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Compact optical proximity sensor with ball grid array and windowed substrate |
US20110121181A1 (en) * | 2009-11-23 | 2011-05-26 | Avago Technologies Ecbu (Singapore) Pte. Ltd. | Infrared Proximity Sensor Package with Improved Crosstalk Isolation |
US9733357B2 (en) | 2009-11-23 | 2017-08-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Infrared proximity sensor package with improved crosstalk isolation |
US10541235B2 (en) | 2010-06-01 | 2020-01-21 | Lg Innotek Co., Ltd. | Light emitting device package |
US9991241B2 (en) | 2010-06-01 | 2018-06-05 | Lg Innotek Co., Ltd. | Light emitting device package |
US9659916B2 (en) | 2010-06-01 | 2017-05-23 | Lg Innotek Co., Ltd. | Light emitting device package |
EP2393114A3 (en) * | 2010-06-01 | 2015-02-18 | LG Innotek Co., Ltd. | Light emitting device package |
US9165912B2 (en) | 2010-06-01 | 2015-10-20 | Lg Innotek Co., Ltd. | Light emitting device package |
US9418973B2 (en) | 2010-06-01 | 2016-08-16 | Lg Innotek Co., Ltd. | Light emitting device package |
US10283491B2 (en) | 2010-06-01 | 2019-05-07 | Lg Innotek Co., Ltd | Light emitting device package |
US8698187B2 (en) * | 2010-09-30 | 2014-04-15 | Toyoda Gosei Co., Ltd. | Light emitting device |
US20120080711A1 (en) * | 2010-09-30 | 2012-04-05 | Toyoda Gosei Co., Ltd. | Light emitting device |
US8841597B2 (en) | 2010-12-27 | 2014-09-23 | Avago Technologies Ip (Singapore) Pte. Ltd. | Housing for optical proximity sensor |
US9223076B2 (en) | 2011-04-14 | 2015-12-29 | Lg Innotek Co., Ltd. | Semiconductor light emitting device package |
US20130003381A1 (en) * | 2011-06-29 | 2013-01-03 | Toyoda Gosei Co., Ltd. | Light emitting device |
TWI663750B (en) * | 2011-11-24 | 2019-06-21 | 大陸商惠州科銳半導體照明有限公司 | Water resistant led devices and an led display including same |
US9793442B2 (en) | 2013-11-08 | 2017-10-17 | Osram Opto Semiconductors Gmbh | Optoelectronic component |
Also Published As
Publication number | Publication date |
---|---|
US8975646B2 (en) | 2015-03-10 |
JP2008501227A (en) | 2008-01-17 |
EP1751806B1 (en) | 2019-09-11 |
JP5366399B2 (en) | 2013-12-11 |
EP1751806A2 (en) | 2007-02-14 |
WO2005117071A3 (en) | 2006-08-03 |
WO2005117071A2 (en) | 2005-12-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8975646B2 (en) | Optoelectronic semiconductor component and housing base for such a component | |
US7427806B2 (en) | Semiconductor component emitting and/or receiving electromagnetic radiation, and housing base for such a component | |
US6396082B1 (en) | Light-emitting diode | |
KR101759263B1 (en) | Optoelectronic component and method for producing an optoelectronic component and a compound structure | |
KR101278885B1 (en) | Lighting module and method for the production thereof | |
US6900511B2 (en) | Optoelectronic component and method for producing it | |
US20040232825A1 (en) | LED light source with lens | |
KR102149016B1 (en) | Optoelectronic component | |
KR101813495B1 (en) | Light Emitting Diode Package | |
EP2492982A2 (en) | Light emitting device package | |
KR20090044306A (en) | Light emitting diode package | |
KR101176672B1 (en) | Radiation-emitting or radiation-receiving semiconductor component and method for the production thereof | |
JP2008172239A (en) | LED package | |
US20080197368A1 (en) | Optoelectronic Component and Package For an Optoelectronic Component | |
KR20080041794A (en) | Light emitting diode package | |
KR20090102207A (en) | Light emitting diode package | |
KR101367381B1 (en) | Light emitting diode package | |
CN103069592A (en) | Radiation-emitting component and method for producing a radiation-emitting component | |
KR20120030475A (en) | Light emitting diode package | |
CN100452457C (en) | Optoelectronic semiconductor component and housing base for such a component | |
KR100593161B1 (en) | White light emitting diode and its manufacturing method | |
TWI270215B (en) | Optoelectronic semiconductor component and housing base-body for such a component | |
KR101018238B1 (en) | Light emitting diode package | |
KR20090047888A (en) | LED Package | |
KR100974338B1 (en) | Light emitting diode package |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: OSRAM OPTO SEMICONDUCTORS GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ARNDT, KARLHEINZ;REEL/FRAME:019986/0190 Effective date: 20061113 |
|
FEPP | Fee payment procedure |
Free format text: PAYOR NUMBER ASSIGNED (ORIGINAL EVENT CODE: ASPN); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
CC | Certificate of correction | ||
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 4TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1551); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 4 |
|
AS | Assignment |
Owner name: OSRAM OLED GMBH, GERMANY Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:OSRAM OPTO SEMICONDUCTORS GMBH;REEL/FRAME:051467/0906 Effective date: 20191218 |
|
MAFP | Maintenance fee payment |
Free format text: PAYMENT OF MAINTENANCE FEE, 8TH YEAR, LARGE ENTITY (ORIGINAL EVENT CODE: M1552); ENTITY STATUS OF PATENT OWNER: LARGE ENTITY Year of fee payment: 8 |