US20070152687A1 - Mems probe card with elastic multi-layer structure - Google Patents
Mems probe card with elastic multi-layer structure Download PDFInfo
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- US20070152687A1 US20070152687A1 US11/558,792 US55879206A US2007152687A1 US 20070152687 A1 US20070152687 A1 US 20070152687A1 US 55879206 A US55879206 A US 55879206A US 2007152687 A1 US2007152687 A1 US 2007152687A1
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- probe card
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- 239000000523 sample Substances 0.000 title claims abstract description 106
- 238000000429 assembly Methods 0.000 claims abstract description 25
- 230000000712 assembly Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000010936 titanium Substances 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 239000011159 matrix material Substances 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 abstract description 10
- 239000010410 layer Substances 0.000 description 83
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008901 benefit Effects 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
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- 238000004519 manufacturing process Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/0735—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card arranged on a flexible frame or film
Definitions
- This invention generally relates to an MEMS probe card, and more particularly to an MEMS probe card with multi-layer structure.
- the probe tips may be designed to have elasticity so as to improve the electrical coupling between the probe tips and the bumps.
- FIG. 1 shows a conventional micro-electro-mechanical system (MEMS) probe card which is disclosed in U.S. Pat. No. 6,084,420.
- An MEMS probe assembly 120 is disposed on a testing pad 110 , and the MEMS probe assembly 120 has a plurality of bridge elements 121 , a plurality of supporting members 122 and a probe tip 123 .
- the bridge elements 121 are laterally T-shaped and arranged in a single layer outward radiated structure, two sides of a head 121 a of each bridge element 121 are respectively connected to the supporting members 122 , tails 121 b of the bridge elements 121 are connected together, and the probe tip 123 is disposed on the conjunction of the tails 121 b of the bridge elements 121 .
- the MEMS probe assembly 120 may have longitudinal elasticity.
- the bridge elements 121 are arranged in single layer, they may have a limited elastic buffer.
- the arrangement of the probe assembly with outward radiated structure may cause wasting of room and relatively decrease the counts of the MEMS probes assembly 120 on the probe card.
- a substrate is disposed with a plurality of MEMS probe assemblies each having a plurality of first layer bridge elements, at least one second layer bridge element and a probe tip.
- the first layer bridge elements have a ⁇ -shaped cross-section and have two first piers and a first beam.
- the second layer bridge element has a ⁇ -shaped cross-section and two of its piers are respectively disposed on the first beams of the first layer bridge elements.
- the probe tip is disposed on the second beam of the second layer bridge element. According to the stacking of the second layer bridge element on the first layer bridge elements, the probe tip may have more elastic buffer and a better resistance to compressive strain, and the counts of the MEMS probe assemblies may be increased.
- the first and the second layer bridge elements are fabricated by electroplating with nickel, gold, copper, tungsten, titanium or their alloy, and the second layer bridge element is stacking on the first layer bridge elements and having an H-shaped vertical view with the first layer bridge elements such that the MEMS probe assemblies may have larger elasticity so as to probe the non-coplanar bumps or bonding pads on wafers.
- an MEMS probe card with elastic multi-layer structure mainly includes a substrate and a plurality of MEMS probe assemblies.
- the substrate has a plurality of testing pads, and the MEMS probe assemblies are disposed on the testing pads.
- Each of the MEMS probe assemblies includes a plurality of first layer bridge elements, at least one second layer bridge element and a probe tip, wherein each of the first layer bridge elements forms a ⁇ -shaped cross-section and has two first piers and a first beam, the second layer bridge element forms a ⁇ -shaped cross-section and has two second piers and a second beam, the second piers of the second layer bridge element are respectively disposed on the first beams of the first layer bridge elements, and the probe tip is disposed on the second beam of the second layer bridge element.
- FIG. 1 shows an explored perspective view of a conventional MEMS probe assembly of a micro-electro-mechanical system (MEMS) probe card with elastic structure.
- MEMS micro-electro-mechanical system
- FIG. 2 shows a side view of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention.
- FIG. 3 shows an elevational view of the substrate of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention.
- FIG. 4 shows an explored perspective view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention.
- FIG. 5 shows an elevational view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention.
- FIG. 6 shows a sectional view of FIG. 4 in the direction of 6 - 6 according to the first embodiment of the present invention.
- FIG. 7 shows a sectional view of FIG. 4 in the direction of 7 - 7 according to the first embodiment of the present invention.
- FIG. 8 shows an explored perspective view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the second embodiment of the present invention.
- FIG. 9 shows an elevational view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the second embodiment of the present invention.
- a micro-electro-mechanical system (MEMS) probe card with elastic multi-layer structure 200 includes a substrate 210 and a plurality of MEMS probe assemblies 220 .
- the substrate 210 has a plurality of testing pads 211 , which can be a ceramic substrate or a silicon substrate so as to be used as a testing head of the MEMS probe card 200 and be disposed on a printed circuit board 230 .
- the MEMS probe assemblies 220 are disposed on the testing pads 211 corresponded to the position of a plurality of bumps on a wafer, and the MEMS probe assemblies 220 are advantageously arranged in matrix.
- each of the MEMS probe assemblies 220 includes a plurality of first layer bridge elements 221 , at least one second layer bridge element 222 and a probe tip 223 .
- the first layer bridge elements 221 maybe formed of a material such as nickel, gold, copper, tungsten, titanium or their alloy, and which can be formed by the operating steps of first depositing a patterned photoresist layer on the substrate 210 , and then proceeding lithography, electroplating and stripping photoresist.
- the material and the formation of the second layer bridge elements 222 may identical to that of the first layer bridge elements 221 .
- the detailed descriptions of the MEMS probe assemblies 220 are referring to FIGS. 4 , 5 , 6 and 7 .
- FIG. 4 , 5 , 6 and 7 The detailed descriptions of the MEMS probe assemblies 220 are referring to FIGS. 4 , 5 , 6 and 7 .
- FIG. 4 shows an expanded perspective view of the MEMS probe assembly 220 according to the embodiment of the present invention.
- FIG. 6 shows a side view of FIG. 4 in the direction of 6 - 6
- FIG. 7 shows a side view of FIG. 4 in the direction of 7 - 7 .
- the first layer bridge elements 221 are desirably arranged in parallel, each of the first layer bridge elements 221 forms a ⁇ -shaped cross-section and has two first piers 221 a and a first beam 221 b , as shown in FIG. 2 .
- the first piers 221 a are disposed on the testing pads 221 of the substrate 210 and respectively connected to the two ends of the first beam 221 b .
- Each of the second layer bridge elements 222 also forms a ⁇ -shaped cross-section and has two second piers 222 a and a second beam 222 b , the second piers 222 a are respectively disposed on the first beams 221 b of the first layer bridge elements 221 , as shown in FIG. 5 .
- the second layer bridge elements 222 are stacking on the first layer bridge elements 221 and having an H-shaped vertical view with the first layer bridge elements 221 .
- the probe tips 223 are disposed on the second beams 222 b of the second layer bridge elements 222 , and the material hardness of the probe tips 223 are larger than that of the first layer bridge elements 221 and the second layer bridge elements 222 .
- the probe tips 223 can be fabricated by electroplating with tungsten or its alloy. According to the H-shaped assemblies formed by the second layer bridge elements 222 stacking on the first layer bridge elements 221 , the probe tips 223 disposed on them may have larger elasticity such that the MEMS probe assemblies 220 of the MEMS probe card 200 may electrically coupling to the bumps or bonding pads on the wafer elastically so as to improve the testing difficulty caused by the coplanarity variations of the bumps or the bonding pads.
- an MEMS probe card with elastic multi-layer structure includes a substrate (not shown) and a plurality of MEMS probe assemblies 310 , wherein each of the MEMS probe assemblies 310 includes a plurality of first layer bridge elements 311 , a plurality of second layer bridge elements 312 , a third layer bridge element 313 and a probe tip 314 .
- the first layer bridge elements 311 are advantageously arranged in parallel, each of the first layer bridge elements 311 forms a ⁇ -shaped cross-section and has two first piers 311 a and a first beam 311 b .
- the second layer bridge elements 312 are also desirably arranged in parallel and perpendicularly to the first layer bridge elements 311 , each of the second layer bridge elements 312 forms a ⁇ -shaped cross-section and has two second piers 312 a and a second beam 312 b .
- the second piers 312 a of the second layer bridge elements are respectively disposed on the first beams 311 b of the first layer bridge elements 311 .
- the third layer bridge element 313 forms a ⁇ -shaped cross-section and has two third piers 313 a and a third beam 313 b .
- the third piers 313 a of the third layer bridge element 313 are respectively disposed on the second beams 312 b of the second layer bridge elements 312 .
- the size of the first layer bridge elements 311 are larger than that of the second layer bridge elements 312 and the third layer bridge elements 313 such that the first layer bridge elements 311 may have better supporting ability.
- the second layer bridge elements 312 are stacking on the first layer bridge elements 311 and having a ⁇ -shaped vertical view with the first layer bridge elements 311
- the third layer bridge elements 313 are stacking on the second layer bridge elements 312 and having an H-shaped vertical view with the second layer bridge elements 312 .
- the probe tips 314 are disposed on the third beams 313 b of the third layer bridge elements 313 .
- the first layer bridge elements 311 , the second layer bridge elements 312 , the third layer bridge elements 313 and the probe tips 314 can be formed by the operating steps of first depositing a multi-layer patterned photoresist layer, and then proceeding lithography, electroplating and stripping photoresist procedure on each layer.
- the first layer bridge elements 311 , the second layer bridge elements 312 and the third layer bridge elements 313 may be formed of a material such as nickel, gold, copper, tungsten, titanium or their alloy, and the probe tips 314 may be formed of a material such as tungsten or its alloy.
- the arrangement of the three-layer bridge elements may increase the elasticity of the MEMS probe assemblies 310 so as to improve the testing difficulty caused by the coplanarity variations of the bumps or the bonding pads on the wafer, especially when the assembly is used to probe the bumps on a packaged wafer, e.g. bonding balls of a wafer level cheap scale package (WLCSP).
- WLCSP wafer level cheap scale package
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
- This application claims the priority benefit of Taiwan Patent Application Serial Number 094147737, filed on Dec. 30, 2005, the full disclosure of which is incorporated herein by reference.
- 1. Field of the Invention
- This invention generally relates to an MEMS probe card, and more particularly to an MEMS probe card with multi-layer structure.
- 2. Description of the Related Art
- Semiconductor devices have to be tested before packaging. A wafer is put in a testing machine with vertical probe tips, then utilizing the probe tips of a probe card to probe a plurality of bumps of input and output signal pads on the wafer. However, because the bumps disposed on the wafer have manufacturing variations, the heights of the bumps are different with each other especially those bumps need to be reflowed to ball bumps will have larger variations in height. To ensure the probe tips to electrically contact the bumps effectively, the probe tips may be designed to have elasticity so as to improve the electrical coupling between the probe tips and the bumps.
-
FIG. 1 shows a conventional micro-electro-mechanical system (MEMS) probe card which is disclosed in U.S. Pat. No. 6,084,420. AnMEMS probe assembly 120 is disposed on atesting pad 110, and theMEMS probe assembly 120 has a plurality ofbridge elements 121, a plurality of supportingmembers 122 and aprobe tip 123. Thebridge elements 121 are laterally T-shaped and arranged in a single layer outward radiated structure, two sides of ahead 121 a of eachbridge element 121 are respectively connected to the supportingmembers 122,tails 121 b of thebridge elements 121 are connected together, and theprobe tip 123 is disposed on the conjunction of thetails 121 b of thebridge elements 121. According to the support to theprobe tip 123 with thebridge elements 121 and the supportingmembers 122, theMEMS probe assembly 120 may have longitudinal elasticity. However, because thebridge elements 121 are arranged in single layer, they may have a limited elastic buffer. Moreover, the arrangement of the probe assembly with outward radiated structure may cause wasting of room and relatively decrease the counts of theMEMS probes assembly 120 on the probe card. - It is an object of the present invention to provide an MEMS probe card with elastic multi-layer structure. A substrate is disposed with a plurality of MEMS probe assemblies each having a plurality of first layer bridge elements, at least one second layer bridge element and a probe tip. The first layer bridge elements have a π-shaped cross-section and have two first piers and a first beam.
- The second layer bridge element has a π-shaped cross-section and two of its piers are respectively disposed on the first beams of the first layer bridge elements. The probe tip is disposed on the second beam of the second layer bridge element. According to the stacking of the second layer bridge element on the first layer bridge elements, the probe tip may have more elastic buffer and a better resistance to compressive strain, and the counts of the MEMS probe assemblies may be increased.
- It is an object of the present invention to provide an MEMS probe card with elastic multi-layer structure. The first and the second layer bridge elements are fabricated by electroplating with nickel, gold, copper, tungsten, titanium or their alloy, and the second layer bridge element is stacking on the first layer bridge elements and having an H-shaped vertical view with the first layer bridge elements such that the MEMS probe assemblies may have larger elasticity so as to probe the non-coplanar bumps or bonding pads on wafers.
- According to the present invention, an MEMS probe card with elastic multi-layer structure mainly includes a substrate and a plurality of MEMS probe assemblies. The substrate has a plurality of testing pads, and the MEMS probe assemblies are disposed on the testing pads. Each of the MEMS probe assemblies includes a plurality of first layer bridge elements, at least one second layer bridge element and a probe tip, wherein each of the first layer bridge elements forms a π-shaped cross-section and has two first piers and a first beam, the second layer bridge element forms a π-shaped cross-section and has two second piers and a second beam, the second piers of the second layer bridge element are respectively disposed on the first beams of the first layer bridge elements, and the probe tip is disposed on the second beam of the second layer bridge element.
- Other objects, advantages, and novel features of the present invention will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings.
-
FIG. 1 shows an explored perspective view of a conventional MEMS probe assembly of a micro-electro-mechanical system (MEMS) probe card with elastic structure. -
FIG. 2 shows a side view of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention. -
FIG. 3 shows an elevational view of the substrate of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention. -
FIG. 4 shows an explored perspective view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention. -
FIG. 5 shows an elevational view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the first embodiment of the present invention. -
FIG. 6 shows a sectional view ofFIG. 4 in the direction of 6-6 according to the first embodiment of the present invention. -
FIG. 7 shows a sectional view ofFIG. 4 in the direction of 7-7 according to the first embodiment of the present invention. -
FIG. 8 shows an explored perspective view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the second embodiment of the present invention. -
FIG. 9 shows an elevational view of the MEMS probe assembly of the MEMS probe card with elastic multi-layer structure according to the second embodiment of the present invention. - Referring to
FIGS. 2 and 3 , in one embodiment of the present invention, a micro-electro-mechanical system (MEMS) probe card with elasticmulti-layer structure 200 includes asubstrate 210 and a plurality ofMEMS probe assemblies 220. Thesubstrate 210 has a plurality oftesting pads 211, which can be a ceramic substrate or a silicon substrate so as to be used as a testing head of theMEMS probe card 200 and be disposed on a printedcircuit board 230. TheMEMS probe assemblies 220 are disposed on thetesting pads 211 corresponded to the position of a plurality of bumps on a wafer, and theMEMS probe assemblies 220 are advantageously arranged in matrix. Wherein, each of theMEMS probe assemblies 220 includes a plurality of firstlayer bridge elements 221, at least one secondlayer bridge element 222 and aprobe tip 223. The firstlayer bridge elements 221 maybe formed of a material such as nickel, gold, copper, tungsten, titanium or their alloy, and which can be formed by the operating steps of first depositing a patterned photoresist layer on thesubstrate 210, and then proceeding lithography, electroplating and stripping photoresist. The material and the formation of the secondlayer bridge elements 222 may identical to that of the firstlayer bridge elements 221. The detailed descriptions of theMEMS probe assemblies 220 are referring toFIGS. 4 , 5, 6 and 7.FIG. 4 shows an expanded perspective view of theMEMS probe assembly 220 according to the embodiment of the present invention.FIG. 6 shows a side view ofFIG. 4 in the direction of 6-6, andFIG. 7 shows a side view ofFIG. 4 in the direction of 7-7. The firstlayer bridge elements 221 are desirably arranged in parallel, each of the firstlayer bridge elements 221 forms a π-shaped cross-section and has twofirst piers 221 a and afirst beam 221 b, as shown inFIG. 2 . Thefirst piers 221 a are disposed on thetesting pads 221 of thesubstrate 210 and respectively connected to the two ends of thefirst beam 221 b. Each of the secondlayer bridge elements 222 also forms a π-shaped cross-section and has twosecond piers 222 a and asecond beam 222 b, thesecond piers 222 a are respectively disposed on thefirst beams 221 b of the firstlayer bridge elements 221, as shown inFIG. 5 . The secondlayer bridge elements 222 are stacking on the firstlayer bridge elements 221 and having an H-shaped vertical view with the firstlayer bridge elements 221. Theprobe tips 223 are disposed on thesecond beams 222 b of the secondlayer bridge elements 222, and the material hardness of theprobe tips 223 are larger than that of the firstlayer bridge elements 221 and the secondlayer bridge elements 222. Theprobe tips 223 can be fabricated by electroplating with tungsten or its alloy. According to the H-shaped assemblies formed by the secondlayer bridge elements 222 stacking on the firstlayer bridge elements 221, theprobe tips 223 disposed on them may have larger elasticity such that the MEMS probe assemblies 220 of theMEMS probe card 200 may electrically coupling to the bumps or bonding pads on the wafer elastically so as to improve the testing difficulty caused by the coplanarity variations of the bumps or the bonding pads. - Referring to
FIG. 8 , in another embodiment of the present invention, an MEMS probe card with elastic multi-layer structure includes a substrate (not shown) and a plurality ofMEMS probe assemblies 310, wherein each of theMEMS probe assemblies 310 includes a plurality of firstlayer bridge elements 311, a plurality of secondlayer bridge elements 312, a thirdlayer bridge element 313 and aprobe tip 314. The firstlayer bridge elements 311 are advantageously arranged in parallel, each of the firstlayer bridge elements 311 forms a π-shaped cross-section and has twofirst piers 311 a and afirst beam 311 b. The secondlayer bridge elements 312 are also desirably arranged in parallel and perpendicularly to the firstlayer bridge elements 311, each of the secondlayer bridge elements 312 forms a π-shaped cross-section and has twosecond piers 312 a and asecond beam 312 b. Thesecond piers 312 a of the second layer bridge elements are respectively disposed on thefirst beams 311 b of the firstlayer bridge elements 311. The thirdlayer bridge element 313 forms a π-shaped cross-section and has twothird piers 313 a and athird beam 313 b. Thethird piers 313 a of the thirdlayer bridge element 313 are respectively disposed on thesecond beams 312 b of the secondlayer bridge elements 312. Preferably, the size of the firstlayer bridge elements 311 are larger than that of the secondlayer bridge elements 312 and the thirdlayer bridge elements 313 such that the firstlayer bridge elements 311 may have better supporting ability. Referring toFIG. 9 , in this embodiment, the secondlayer bridge elements 312 are stacking on the firstlayer bridge elements 311 and having a ∥-shaped vertical view with the firstlayer bridge elements 311, and the thirdlayer bridge elements 313 are stacking on the secondlayer bridge elements 312 and having an H-shaped vertical view with the secondlayer bridge elements 312. Theprobe tips 314 are disposed on thethird beams 313 b of the thirdlayer bridge elements 313. The firstlayer bridge elements 311, the secondlayer bridge elements 312, the thirdlayer bridge elements 313 and theprobe tips 314 can be formed by the operating steps of first depositing a multi-layer patterned photoresist layer, and then proceeding lithography, electroplating and stripping photoresist procedure on each layer. The firstlayer bridge elements 311, the secondlayer bridge elements 312 and the thirdlayer bridge elements 313 may be formed of a material such as nickel, gold, copper, tungsten, titanium or their alloy, and theprobe tips 314 may be formed of a material such as tungsten or its alloy. In this embodiment, the arrangement of the three-layer bridge elements may increase the elasticity of theMEMS probe assemblies 310 so as to improve the testing difficulty caused by the coplanarity variations of the bumps or the bonding pads on the wafer, especially when the assembly is used to probe the bumps on a packaged wafer, e.g. bonding balls of a wafer level cheap scale package (WLCSP). - Although the invention has been explained in relation to its preferred embodiment, it is not used to limit the invention. It is to be understood that many other possible modifications and variations can be made by those skilled in the art without departing from the spirit and scope of the invention as hereinafter claimed.
Claims (18)
Applications Claiming Priority (2)
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TW094147737 | 2005-12-30 | ||
TW094147737A TWI282424B (en) | 2005-12-30 | 2005-12-30 | MEMS type probe card with multi-layer elasticity |
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US20070152687A1 true US20070152687A1 (en) | 2007-07-05 |
US7301355B1 US7301355B1 (en) | 2007-11-27 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090153332A1 (en) * | 2006-08-24 | 2009-06-18 | Murata Manufacturing Co., Ltd. | Test system for radio frequency ic devices and method of manufacturing radio frequency ic devices using the same |
WO2012126087A1 (en) * | 2011-03-21 | 2012-09-27 | University Of Windsor | Apparatus for the automated testing and validation of electronic components |
US20180017593A1 (en) * | 2016-07-13 | 2018-01-18 | Chunghwa Precision Test Tech. Co., Ltd. | Probe structure |
CN112788836A (en) * | 2019-11-08 | 2021-05-11 | 隆达电子股份有限公司 | Circuit integrated device with multilayer bridging structure |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US8089294B2 (en) * | 2008-08-05 | 2012-01-03 | WinMENS Technologies Co., Ltd. | MEMS probe fabrication on a reusable substrate for probe card application |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6084420A (en) * | 1998-11-25 | 2000-07-04 | Chee; Wan Soo | Probe assembly for testing |
US6651325B2 (en) * | 2002-02-19 | 2003-11-25 | Industrial Technologies Research Institute | Method for forming cantilever beam probe card and probe card formed |
US7053636B2 (en) * | 2004-03-10 | 2006-05-30 | Mjc Probe Incorporation | Probe device for electrical testing an integrated circuit device and probe card using the same |
-
2005
- 2005-12-30 TW TW094147737A patent/TWI282424B/en active
-
2006
- 2006-11-10 US US11/558,792 patent/US7301355B1/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6084420A (en) * | 1998-11-25 | 2000-07-04 | Chee; Wan Soo | Probe assembly for testing |
US6651325B2 (en) * | 2002-02-19 | 2003-11-25 | Industrial Technologies Research Institute | Method for forming cantilever beam probe card and probe card formed |
US7053636B2 (en) * | 2004-03-10 | 2006-05-30 | Mjc Probe Incorporation | Probe device for electrical testing an integrated circuit device and probe card using the same |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090153332A1 (en) * | 2006-08-24 | 2009-06-18 | Murata Manufacturing Co., Ltd. | Test system for radio frequency ic devices and method of manufacturing radio frequency ic devices using the same |
US8228075B2 (en) * | 2006-08-24 | 2012-07-24 | Murata Manufacturing Co., Ltd. | Test system for radio frequency IC devices and method of manufacturing radio frequency IC devices using the same |
WO2012126087A1 (en) * | 2011-03-21 | 2012-09-27 | University Of Windsor | Apparatus for the automated testing and validation of electronic components |
CN103477237A (en) * | 2011-03-21 | 2013-12-25 | 温莎大学 | Apparatus for the automated testing and validation of electronic components |
US20140062516A1 (en) * | 2011-03-21 | 2014-03-06 | University Of Windsor | Apparatus for the Automated Testing and Validation of Electronic Components |
JP2014508944A (en) * | 2011-03-21 | 2014-04-10 | ユニバーシティ・オブ・ウィンザー | Equipment for automatic testing / verification of electronic components |
US9261533B2 (en) * | 2011-03-21 | 2016-02-16 | University Of Windsor | Apparatus for the automated testing and validation of electronic components |
US20180017593A1 (en) * | 2016-07-13 | 2018-01-18 | Chunghwa Precision Test Tech. Co., Ltd. | Probe structure |
CN107621559A (en) * | 2016-07-13 | 2018-01-23 | 中华精测科技股份有限公司 | Probe structure |
US10514390B2 (en) * | 2016-07-13 | 2019-12-24 | Chunghwa Precision Test Tech. Co., Ltd. | Probe structure |
CN112788836A (en) * | 2019-11-08 | 2021-05-11 | 隆达电子股份有限公司 | Circuit integrated device with multilayer bridging structure |
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Publication number | Publication date |
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US7301355B1 (en) | 2007-11-27 |
TW200724929A (en) | 2007-07-01 |
TWI282424B (en) | 2007-06-11 |
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