US20070098590A1 - Ni-pt alloy and target comprising the alloy - Google Patents
Ni-pt alloy and target comprising the alloy Download PDFInfo
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- US20070098590A1 US20070098590A1 US10/596,671 US59667105A US2007098590A1 US 20070098590 A1 US20070098590 A1 US 20070098590A1 US 59667105 A US59667105 A US 59667105A US 2007098590 A1 US2007098590 A1 US 2007098590A1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C1/00—Electrolytic production, recovery or refining of metals by electrolysis of solutions
- C25C1/20—Electrolytic production, recovery or refining of metals by electrolysis of solutions of noble metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
Definitions
- the present invention relates to a Ni—Pt alloy superior in workability, a sputtering target manufacturing by rolling a Ni—Pt alloy ingot, and a manufacturing method of such Ni—Pt alloy and Ni—Pt alloy target.
- Ni—Pt is used as a sputtering target for semiconductor devices, and this Ni—Pt target was conventionally manufactured with the powder metallurgy process. In other words, the target was manufactured by sintering Ni powder and Pt powder, or by sintering Ni—Pt alloy powder.
- gas components easily get mixed into the target, and not only does this reduce purity, it causes abnormal electrical discharge during sputtering, induces the generation of particles, and deteriorates the deposition characteristics.
- a Ni—Pt product formed via melting and casting has a problem in that it is extremely hard and brittle.
- a Ni—Pt ingot is rolled, there is a problem in that grain boundary fractures occur, and it is not possible to manufacture a flat and even planar target. This is the reason targets were manufactured with the powder metallurgy process as described above.
- Patent Document 1 considered the cause of fractures to be the coarsened crystal grains in the target and, in order to obtain fine crystal grains, attempted to inhibit the coarsening of crystals by preparing a mold with large heat capacity or a water-cooled mold, and performing rapid quenching by inhibiting the temperature rise of the mold.
- Patent Document 1 there is a drawback in that large equipment is necessary for preparing a mold with large heat capacity or a water-cooled mold, and there is a problem in that it is difficult to inhibit the coarsening of crystals unless the cooling speed is considerably fast.
- An object of the present invention is to provide technology capable of rolling a Ni—Pt alloy ingot upon reducing the hardness thereof, and manufacturing a rolled target stably and efficiently.
- the present inventors discovered that by increasing the purity of the Ni—Pt alloy, it is possible to significantly reduce the hardness of the Ni—Pt alloy ingot.
- the present invention provides 1) a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy, and 2) the Ni—Pt alloy and Ni—Pt alloy target according to 1) above having a purity of 99.99% or higher.
- the present invention also provides 3) a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities by filtering the neutralized solution with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt, 4) the manufacturing method of Ni—Pt alloy according to 3) above wherein the Ni—Pt alloy has a purity of 99.99% or higher, and 5) the manufacturing method of Ni—Pt alloy superior in workability according to 3) or 4)
- the present invention also provides 6) the manufacturing method of a Ni—Pt alloy target, wherein the dissolved Ni—Pt alloy ingot manufactured based on any one of the methods according to 3) to 5) above.
- the present invention is able to easily perform cool rolling to a dissolved Ni—Pt alloy ingot without requiring any equipment, such as preparing a mold with large heat capacity or a water-cooled mold, for accelerating the cooling speed in order to inhibit the coarsening of crystals, and yields a superior effect in that it is possible to improve the quality of the Ni—Pt alloy deposition by reducing impurities contained in the Ni—Pt alloy target and realizing high purification.
- the present invention can be applied to a Ni—Pt alloy containing Pt in a content of 0.1 to 20 wt %.
- This component composition is required in the deposition of a Ni—Pt alloy material of semiconductor devices, and is also a composition range of the Ni—Pt alloy or target of the present invention capable of reducing the hardness.
- the Vickers hardness obtained by the Ni—Pt alloy of the present invention is 40 to 90.
- the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed. This is a significant feature of the present invention.
- the Pt content is set to be 0.1 to 20 wt %.
- the Ni—Pt alloy and Ni—Pt alloy target of the present invention have a purity of 99.99% or higher.
- the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed.
- Ni—Pt alloy superior in workability is explained; as for a Ni raw material, foremost, a raw material Ni having a purity of 3N level is subject to electrochemical dissolution, the electrolytically leached solution is thereafter neutralized with ammonia, and the neutralized solution is filtered with activated carbon to remove impurities.
- Pt raw material a raw material Pt having a purity of 3N level is leached with acid, and this leached solution is subject to electrolysis to manufacture high purity electrodeposited Pt.
- the obtained Ni—Pt alloy has a purity of 99.99% (4N) or higher.
- Ni—Pt alloy ingot obtained via melting and casting as described above has a Pt content of 0.1 to 20 wt % and a Vickers hardness of 40 to 90. Also as described above, this ingot is superior in workability.
- the high purity Ni powder and high purity electrodeposited Pt obtained as described above were dissolved under a vacuum where the degree of vacuum was 10 ⁇ 4 Torr to obtain high purity Ni-20% Pt alloy.
- the hardness of this alloy was Hv 80. This alloy was rolled at room temperature to obtain a target.
- Example 2 As with Example 1, high purity Ni-10% Pt alloy was prepared. The hardness of this alloy was Hv 65. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2. TABLE 2 (wtppm) Example 2 Example 3 Example 4 Fe 2.0 1.9 1.8 Cr 0.6 0.6 Co 0.5 0.5 0.5 Cu 0.1 0.1 0.1 Al 0.1 0.1 0.1 O 20 20 20 C 10 10 10 N ⁇ 10 ⁇ 10 ⁇ 10 Hardness 45 55 65 Plastic Workability at Excellent Excellent Excellent Room Temperature
- the present invention yields a superior effect in that it is easy to perform cold rolling to a dissolved Ni—Pt alloy ingot, and is capable of simultaneously reducing the impurities contained in the Ni—Pt alloy target to realize high purification. As a result, it is possible to improve the quality of Ni—Pt alloy deposition.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Electrochemistry (AREA)
- Physical Vapour Deposition (AREA)
- Manufacture And Refinement Of Metals (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
Description
- The present invention relates to a Ni—Pt alloy superior in workability, a sputtering target manufacturing by rolling a Ni—Pt alloy ingot, and a manufacturing method of such Ni—Pt alloy and Ni—Pt alloy target.
- Ni—Pt is used as a sputtering target for semiconductor devices, and this Ni—Pt target was conventionally manufactured with the powder metallurgy process. In other words, the target was manufactured by sintering Ni powder and Pt powder, or by sintering Ni—Pt alloy powder.
- Since it is impossible for a sintered product to become a 100% high density product, it is undeniable that such sintered product is inferior in terms of density in comparison to a target manufactured via melting, casting and rolling.
- Therefore, gas components easily get mixed into the target, and not only does this reduce purity, it causes abnormal electrical discharge during sputtering, induces the generation of particles, and deteriorates the deposition characteristics.
- Meanwhile, a Ni—Pt product formed via melting and casting has a problem in that it is extremely hard and brittle. As a result, when a Ni—Pt ingot is rolled, there is a problem in that grain boundary fractures occur, and it is not possible to manufacture a flat and even planar target. This is the reason targets were manufactured with the powder metallurgy process as described above.
- In light of the foregoing circumstances, a Ni—Pt target formed via melting and casting, and which is free from cracks, has been proposed (for instance, refer to Patent Document 1).
- This Patent Document 1 considered the cause of fractures to be the coarsened crystal grains in the target and, in order to obtain fine crystal grains, attempted to inhibit the coarsening of crystals by preparing a mold with large heat capacity or a water-cooled mold, and performing rapid quenching by inhibiting the temperature rise of the mold.
- Nevertheless, with Patent Document 1, there is a drawback in that large equipment is necessary for preparing a mold with large heat capacity or a water-cooled mold, and there is a problem in that it is difficult to inhibit the coarsening of crystals unless the cooling speed is considerably fast.
- Further, the crystals that come in contact with the mold are fine, and become coarse as they draw away from such mold. Thus, there is a problem in that it is difficult to obtain a uniform crystal structure, and it is therefore not possible to manufacture a target having a uniform structure or that is stable.
- [Patent Document 1] Japanese Patent Laid-Open Publication No. S63-33563
- An object of the present invention is to provide technology capable of rolling a Ni—Pt alloy ingot upon reducing the hardness thereof, and manufacturing a rolled target stably and efficiently.
- In order to overcome the foregoing problems, the present inventors discovered that by increasing the purity of the Ni—Pt alloy, it is possible to significantly reduce the hardness of the Ni—Pt alloy ingot.
- Based on the foregoing discovery, the present invention provides 1) a Ni—Pt alloy superior in workability containing Pt in a content of 0.1 to 20 wt % and having a Vickers hardness of 40 to 90, and a target comprising the Ni—Pt alloy, and 2) the Ni—Pt alloy and Ni—Pt alloy target according to 1) above having a purity of 99.99% or higher.
- Further, the present invention also provides 3) a manufacturing method of Ni—Pt alloy superior in workability comprising a step of subjecting a raw material Ni having a purity of 3N level to electrochemical dissolution, a step of neutralizing the electrolytically leached solution with ammonia, a step of removing impurities by filtering the neutralized solution with activated carbon, a step of blowing carbon dioxide into the resultant solution to form nickel carbonate and exposing the resultant product to a reducing atmosphere to prepare high purity Ni powder, a step of leaching a raw material Pt having a purity of 3N level with acid, a step of subjecting the leached solution to electrolysis to prepare high purity electrodeposited Pt, and a step of dissolving the resultant high purity Ni powder and high purity electrodeposited Pt, 4) the manufacturing method of Ni—Pt alloy according to 3) above wherein the Ni—Pt alloy has a purity of 99.99% or higher, and 5) the manufacturing method of Ni—Pt alloy superior in workability according to 3) or 4) above, wherein the Ni—Pt alloy has Pt in a content of 0.1 to 20 wt % and has a Vickers hardness of 40 to 90 Pt.
- Further, the present invention also provides 6) the manufacturing method of a Ni—Pt alloy target, wherein the dissolved Ni—Pt alloy ingot manufactured based on any one of the methods according to 3) to 5) above.
- As a result, the present invention is able to easily perform cool rolling to a dissolved Ni—Pt alloy ingot without requiring any equipment, such as preparing a mold with large heat capacity or a water-cooled mold, for accelerating the cooling speed in order to inhibit the coarsening of crystals, and yields a superior effect in that it is possible to improve the quality of the Ni—Pt alloy deposition by reducing impurities contained in the Ni—Pt alloy target and realizing high purification.
- Further, in addition to being able to prevent the generation of fractures and cracks in the target, a significant effect is yielded in that the generation of particles which often occurred in conventional sintered targets and resulted from the abnormal electrical discharge of sputtering can be inhibited.
- The present invention can be applied to a Ni—Pt alloy containing Pt in a content of 0.1 to 20 wt %. This component composition is required in the deposition of a Ni—Pt alloy material of semiconductor devices, and is also a composition range of the Ni—Pt alloy or target of the present invention capable of reducing the hardness. The Vickers hardness obtained by the Ni—Pt alloy of the present invention is 40 to 90.
- When the Pt content contained in Ni increases, the hardness (Vickers Hv) also increases. This also has a significant influence on the amount of impurities. At 3N level, when the Pt content contained in Ni increases, the hardness increases drastically, and reaches approximately Hv 130 in the vicinity of Ni-20 wt % Pt.
- When an ingot is rolled under this kind of circumstance where the hardness is increased, fractures arise at the grain boundary as a matter of course.
- Meanwhile, with the high purity Ni—Pt alloy of the present invention, although the hardness gradually increases from Pt 0.1 wt % to 20 wt %, the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed. This is a significant feature of the present invention.
- If the hardness is less than Pt 0.1 wt %, sufficient characteristics as a Ni—Pt alloy cannot be obtained, and if the hardness exceeds Pt 20 wt %, as described above, the target becomes too hard and difficult to process. Thus, the Pt content is set to be 0.1 to 20 wt %.
- As a result, in addition to being able to prevent the generation of fractures and cracks in the target, a significant effect is yielded in that the generation of particles which often occurred in conventional sintered targets and resulted from the abnormal electrical discharge of sputtering can be inhibited.
- The Ni—Pt alloy and Ni—Pt alloy target of the present invention have a purity of 99.99% or higher. As a result, the Vickers hardness is within the range of 40 to 90, and is within a range where cold rolling can be performed.
- The manufacturing method of this kind of Ni—Pt alloy superior in workability is explained; as for a Ni raw material, foremost, a raw material Ni having a purity of 3N level is subject to electrochemical dissolution, the electrolytically leached solution is thereafter neutralized with ammonia, and the neutralized solution is filtered with activated carbon to remove impurities.
- Next, carbon dioxide is blown into this resultant solution to obtain nickel carbonate, and this is subject to reducing atmosphere to manufacture high purity Ni powder.
- Meanwhile, as for Pt raw material, a raw material Pt having a purity of 3N level is leached with acid, and this leached solution is subject to electrolysis to manufacture high purity electrodeposited Pt.
- Next, the high purity Ni powder and high purity electrodeposited Pt obtained above are dissolved. The obtained Ni—Pt alloy has a purity of 99.99% (4N) or higher.
- Further, the Ni—Pt alloy ingot obtained via melting and casting as described above has a Pt content of 0.1 to 20 wt % and a Vickers hardness of 40 to 90. Also as described above, this ingot is superior in workability.
- As a result of performing cold rolling to this dissolved Ni—Pt alloy ingot manufactured as described above, it is possible to easily manufacture a Ni—Pt alloy target.
- Thus, in addition to being able to prevent the generation of fractures and cracks in the target, a significant effect is yielded in that the generation of particles which often occurred in conventional sintered targets and resulted from the abnormal electrical discharge of sputtering can be inhibited.
- Examples of the present invention are now explained. These Examples are merely illustrative, and the present invention shall in no way be limited thereby. In other words, the present invention shall only be limited by the scope of the present invention, and shall include the various modifications other than the Examples of this invention.
- 10 kg of 3N level Ni raw material shown in Table 1 was used as the anode, and this was subject to electrolytic leaching with hydrochloric acid solution. At the point when it became 100 g/L, the resultant solution was neutralized with ammonia, and pH was set to 8. This resultant solution was filtered by adding 10 g/L of activated carbon to remove impurities.
- Next, carbon dioxide was blown into this resultant solution to obtain nickel carbonate. The resultant solution was subject to heat treatment at a temperature of 1200° C. under H2 atmosphere to obtain 8 kg of high purity Ni powder.
- Meanwhile, 5 kg of 3N level Pt was used and dissolved in royal water. The resultant solution was made to be a pH 2 level, and this was subject to electrolytic winning to obtain high purity electrodeposited Pt. Carbon was used as the anode during electrolytic winning.
- The high purity Ni powder and high purity electrodeposited Pt obtained as described above were dissolved under a vacuum where the degree of vacuum was 10−4 Torr to obtain high purity Ni-20% Pt alloy. The hardness of this alloy was Hv 80. This alloy was rolled at room temperature to obtain a target.
- There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 1.
TABLE 1 (wtppm) Compar- Raw Raw High High Exam- ative Material Material Purity Purity ple Example Ni Pt Ni Pt 1 1 Fe 110 10 2.1 1.0 1.7 90 Cr 50 2 0.6 0.5 0.6 44 Co 60 5 0.5 0.2 0.4 49 Cu 30 4 0.1 0.1 0.1 25 Al 10 8 0.1 0.1 0.1 9.5 O 150 70 20 <10 10 130 C 80 20 10 <10 10 70 N 30 10 <10 <10 <10 25 Hardness 100 40 70 30 80 110 Plastic Fair Good Good Excel- Excel- Infe- Workability lent lent rior at Room Temperature - As with Example 1, high purity Ni-0.5% Pt alloy was prepared. The hardness of this alloy was Hv 45. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2.
- As with Example 1, high purity Ni-5% Pt alloy was prepared. The hardness of this alloy was Hv 55. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2.
- As with Example 1, high purity Ni-10% Pt alloy was prepared. The hardness of this alloy was Hv 65. This alloy was rolled at room temperature to obtain a target. There were no generation of cracks or fractures in the target, and rolling could be performed easily. The results are shown in Table 2.
TABLE 2 (wtppm) Example 2 Example 3 Example 4 Fe 2.0 1.9 1.8 Cr 0.6 0.6 0.6 Co 0.5 0.5 0.5 Cu 0.1 0.1 0.1 Al 0.1 0.1 0.1 O 20 20 20 C 10 10 10 N <10 <10 <10 Hardness 45 55 65 Plastic Workability at Excellent Excellent Excellent Room Temperature - Pt having the same purity as 3N level Ni was dissolved to become Ni-20 wt %. As a result, the hardness of the obtained ingot was Hv 110. This ingot was extremely hard, and plastic working at room temperature was difficult. The results are shown in Table 1 in comparison to Example 1.
- As described above, the present invention yields a superior effect in that it is easy to perform cold rolling to a dissolved Ni—Pt alloy ingot, and is capable of simultaneously reducing the impurities contained in the Ni—Pt alloy target to realize high purification. As a result, it is possible to improve the quality of Ni—Pt alloy deposition.
- Further, in addition to being able to prevent the generation of fractures and cracks in the target, a significant effect is yielded in that the generation of particles resulting from the abnormal electrical discharge of sputtering can be inhibited. Therefore, this is suitable for the deposition of Ni—Pt alloy in a semiconductor device.
Claims (12)
Priority Applications (1)
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US12/957,013 US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
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JP2004056097 | 2004-03-01 | ||
JP2004-056097 | 2004-03-01 | ||
PCT/JP2005/001813 WO2005083138A1 (en) | 2004-03-01 | 2005-02-08 | Ni-Pt ALLOY AND TARGET COMPRISING THE ALLOY |
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US10/596,671 Abandoned US20070098590A1 (en) | 2004-03-01 | 2005-02-08 | Ni-pt alloy and target comprising the alloy |
US12/957,013 Expired - Lifetime US7959782B2 (en) | 2004-03-01 | 2010-11-30 | Method of manufacturing a Ni-Pt alloy |
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US (2) | US20070098590A1 (en) |
EP (2) | EP2468906B1 (en) |
JP (2) | JP4409572B2 (en) |
KR (2) | KR101021488B1 (en) |
CN (1) | CN100567535C (en) |
TW (1) | TWI264480B (en) |
WO (1) | WO2005083138A1 (en) |
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US20040256035A1 (en) * | 2002-01-18 | 2004-12-23 | Yasuhiro Yamakoshi | Target of high-purity nickel or nickel alloy and its producing method |
US20060037680A1 (en) * | 2003-01-10 | 2006-02-23 | Nikko Materials Co., Ltd | Nickel alloy sputtering target |
US20060292028A1 (en) * | 2003-10-07 | 2006-12-28 | Nikko Materials Co., Ltd. | High-purity ni-v alloy target therefrom high-purity ni-v alloy thin film and process for producing high-purity ni-v alloy |
US20070074790A1 (en) * | 2003-10-24 | 2007-04-05 | Nikko Materials Co., Ltd. | Nickel alloy sputtering target and nickel alloy thin film |
US20090028744A1 (en) * | 2007-07-23 | 2009-01-29 | Heraeus, Inc. | Ultra-high purity NiPt alloys and sputtering targets comprising same |
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US20110068014A1 (en) * | 2004-03-01 | 2011-03-24 | Jx Nippon Mining & Metals Corporation | Ni-Pt Alloy and Target Comprising the Same |
US20110135942A1 (en) * | 2009-02-10 | 2011-06-09 | Jx Nippon Mining & Metals Corporation | Nickel Alloy Sputtering Target and Nickel Silicide Film |
US9249497B2 (en) | 2010-03-19 | 2016-02-02 | Jx Nippon Mining & Metals Corporation | Ni alloy sputtering target, Ni alloy thin film and Ni silicide film |
US9328412B2 (en) | 2010-08-31 | 2016-05-03 | Jx Nippon Mining & Metals Corporation | Fe—Pt-based ferromagnetic material sputtering target |
US10337100B2 (en) | 2014-03-27 | 2019-07-02 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor |
CN113881920A (en) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | Nickel-platinum alloy target material and manufacturing method thereof |
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US10337100B2 (en) | 2014-03-27 | 2019-07-02 | Jx Nippon Mining & Metals Corporation | Sputtering target comprising Ni—P alloy or Ni—Pt—P alloy and production method therefor |
CN113881920A (en) * | 2020-07-03 | 2022-01-04 | 光洋应用材料科技股份有限公司 | Nickel-platinum alloy target material and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
EP2468906A1 (en) | 2012-06-27 |
US20110068014A1 (en) | 2011-03-24 |
JP5113134B2 (en) | 2013-01-09 |
TWI264480B (en) | 2006-10-21 |
JP4409572B2 (en) | 2010-02-03 |
WO2005083138A1 (en) | 2005-09-09 |
TW200530429A (en) | 2005-09-16 |
KR20090101393A (en) | 2009-09-25 |
KR101021488B1 (en) | 2011-03-16 |
EP1721997B1 (en) | 2012-03-28 |
US7959782B2 (en) | 2011-06-14 |
JP2010047843A (en) | 2010-03-04 |
EP1721997A1 (en) | 2006-11-15 |
EP1721997A4 (en) | 2009-11-11 |
EP2468906B1 (en) | 2014-07-23 |
CN100567535C (en) | 2009-12-09 |
KR100925691B1 (en) | 2009-11-10 |
KR20060114384A (en) | 2006-11-06 |
CN1926254A (en) | 2007-03-07 |
JPWO2005083138A1 (en) | 2007-11-22 |
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