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US20060270087A1 - Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) - Google Patents

Growth of planar non-polar {1 -1 0 0} m-plane gallium nitride with metalorganic chemical vapor deposition (MOCVD) Download PDF

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US20060270087A1
US20060270087A1 US11/444,083 US44408306A US2006270087A1 US 20060270087 A1 US20060270087 A1 US 20060270087A1 US 44408306 A US44408306 A US 44408306A US 2006270087 A1 US2006270087 A1 US 2006270087A1
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polar
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Bilge Imer
James Speck
Steven Denbaars
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University of California
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • C30B29/403—AIII-nitrides
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Definitions

  • DenBaars entitled “DEFECT REDUCTION OF NON-POLAR GALLIUM NITRIDE WITH SINGLE-STEP SIDEWALL LATERAL EPITAXIAL OVERGROWTH,” attorneys' docket no. 30794.135-US-P1 (2005-565);
  • the present invention relates to the growth of planar non-polar ⁇ 1-1 0 0 ⁇ m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD).
  • GaN planar non-polar ⁇ 1-1 0 0 ⁇ m-plane gallium nitride
  • MOCVD metalorganic chemical vapor deposition
  • Gallium nitride (GaN) and its ternary and quaternary compounds are prime candidates for fabrication of visible and ultraviolet high-power and high-performance optoelectronic devices and electronic devices. These devices are typically grown epitaxially by growth techniques including molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), or hydride vapor phase epitaxy (HVPE).
  • MBE molecular beam epitaxy
  • MOCVD metalorganic chemical vapor deposition
  • HVPE hydride vapor phase epitaxy
  • substrate is critical for achieving the desired GaN growth orientation.
  • Some of the most widely used substrates for III-N growth include SiC, Al 2 O 3 , and LiAlO 2 .
  • Various crystallographic orientations of these substrates are commercially available.
  • FIGS. 1 ( a ) and 1 ( b ) are schematics of crystallographic directions and planes of interest in hexagonal GaN. Specifically, these schematics show the different crystallographic growth directions and also the planes of interest in the hexagonal wurtzite GaN structure, wherein FIG. 1 ( a ) shows the crystallographic directions a 1 , a 2 , a 3 , c, ⁇ 10-10> and ⁇ 11-20>, and FIG. 1 ( b ) shows planes a (11-20), m (10-10) and r (10-12).
  • the fill patterns of FIG. 1 ( b ) are intended to illustrate the planes of interest, but do not represent the materials of the structure.
  • Such polarization effects decrease the likelihood of electrons and holes recombining, causing the final device to perform poorly.
  • One possible approach for eliminating piezoelectric polarization effects in GaN optoelectronic devices is to grow the devices on non-polar planes of the crystal such as a- ⁇ 11-20 ⁇ and m- ⁇ 1-100 ⁇ planes family of GaN. Such planes contain equal numbers of Ga and N atoms and are charge-neutral.
  • Planar ⁇ 1-100 ⁇ m-plane GaN growth has been developed by HVPE and MBE methods. However, prior to the invention described herein, planar m-plane GaN growth had not been accomplished with MOCVD.
  • the general purpose of the present invention is to grow planar non-polar m- ⁇ 1-100 ⁇ plane GaN material using MOCVD.
  • the method includes performing a solvent clean and acid dip of an m-SiC substrate to remove oxide from the surface of the substrate ex situ prior to growth, in situ annealing of the substrate, growing an aluminum nitride (AIN) nucleation layer on the annealed substrate, and growing the non-polar m-plane GaN epitaxial layer on the nucleation layer with MOCVD.
  • the present invention takes advantage of non-polar nature of m-plane GaN to eliminate polarization fields, and gives rise to flexibility in growth variables, such as temperature, pressure and precursor flows, utilizing the advantage of m-GaN stability during growth.
  • FIGS. 1 ( a ) and 1 ( b ) are schematics of crystallographic directions and planes of interest in hexagonal GaN.
  • FIGS. 2 ( a ) and 2 ( b ) are schematics of band bending and electron hole separation as a result of polarization.
  • FIG. 3 provides a structural characterization of non-polar planar m-plane GaN on m-plane SiC, from top to bottom, wherein the crystal plane of interest is shown in a unit cell/
  • FIG. 4 is a 5 ⁇ m ⁇ 5 ⁇ m atomic force microscopy (AFM) surface image with a surface roughness value 2.54 nm.
  • AFM atomic force microscopy
  • FIG. 5 is a graph that illustrates the xray diffraction rocking curves for on-axis and off-axis.
  • FIG. 6 is a flowchart that illustrates the processing steps for growing planar m-plane III-Nitrides using MOCVD according to the preferred embodiment of the present invention.
  • FIG. 7 further illustrates the results of the processing steps of FIG. 6 according to the preferred embodiment of the present invention.
  • FIG. 3 illustrates the non-polar m-plane GaN (1-100) crystal plane of interest in the unit cell.
  • V/III ratios of 400-5500 and 200-3000, growth pressures varying in between 50-760 Torr, and temperature series of 1100° C.-1275° C. and 1000° C.-1160° C. for AIN and GaN layers were tested, respectively.
  • the optimum AIN nucleation layers, leading to best quality GaN films, were realized at temperatures over 1175° C., at relatively low pressures, and V/III ratio of ⁇ 3500 with the nucleation layer thickness below 150 nm.
  • the most favorable conditions were realized at low pressures, such as below 100 Torr, at temperatures in the range of 1100° C.-1160° C., and at V/III ratios below 700 with low NH 3 vapor pressure.
  • a 5 ⁇ m ⁇ 5 ⁇ m atomic force microscopy (AFM) surface image of the resulting m-plane GaN material is shown in FIG. 4 .
  • the grains are oriented along the ⁇ 11-20> direction and the surface roughness value (root mean square) is ⁇ 2.54 nm for a 5 ⁇ m ⁇ 5 ⁇ m scan.
  • FIG. 5 is a graph of omega (degrees) vs. counts/second showing the x-ray diffraction rocking curves on-axis and off-axis.
  • on-axis (1-100) full width at half max (FWHM) values are measured as low as 0.22° and 1.2°, for a-mosaic and c-mosaic, respectively, and the off-axis (10-12) reflection has FWHM value of 0.38°.
  • FWHM values On-Axis Values a-mosaic c-mosaic Off-Axis 0.22° 1.2° 0.38°
  • FIG. 6 is a flowchart that illustrates the processing steps for growing a planar non polar ⁇ 1-100 ⁇ m-plane III-Nitride epitaxial film using MOCVD according to the preferred embodiment of the present invention, wherein the planar non polar m-plane III-Nitride epitaxial film may comprise a planar m-plane GaN epitaxial layer.
  • FIG. 7 further illustrates the results of each of the processing steps of FIG. 6 .
  • Block 600 represents a solvent clean and acid dip of a suitable substrate ( 700 ), for example, in a 1:10 diluted BHF:DI solution, to remove oxide ( 702 ) from the substrate ( 700 ) surface before loading the substrate ( 700 ) into a reactor for the growth step. (Although this step is recommended, its omission would not significantly alter the results.)
  • the substrate ( 700 ) may comprise an m-SiC or any substrate that is suitable for non-polar m-plane III-Nitride growth.
  • Block 602 represents in situ annealing of the substrate ( 700 ), for example, in hydrogen, prior to the growth step. (Although this step is recommended, its omission would not significantly alter the results.)
  • Block 604 represents growing a nucleation layer ( 704 ) on the substrate ( 700 ).
  • the nucleation layer ( 704 ) typically comprises an aluminum nitride (AIN) nucleation layer or interlayer, but may comprise any nucleation layer ( 704 ) that is appropriate for non-polar m-plane III-Nitride growth.
  • the nucleation layer ( 704 ) may be grown after the annealing step, and prior to the non polar m-plane III-Nitride growth.
  • Block 606 represents growing the non-polar m-plane III-Nitride epitaxial layer ( 706 ) using MOCVD.
  • the non-polar m-plane III-Nitride epitaxial layer ( 706 ) typically comprises a non-polar m-plane GaN epitaxial layer, but may comprise other non-polar m-plane III-Nitride epitaxial layers as well.
  • the non-polar m-plane III-Nitride epitaxial layer ( 706 ) may be grown on the nucleation layer ( 704 ), or on the substrate ( 700 ) itself.
  • the end result is a device, or a free standing wafer, or a substrate, or a template, having a planar epitaxial layer of the non-polar m-plane III-Nitride.
  • non-polar m-GaN on m-SiC using an AIN interlayer
  • suitable substrates on which the non-polar m-plane III-Nitride epitaxial film could be formed, include, but are not limited to, 6 H or 4H m-plane SiC, freestanding m-GaN, LiGaO 2 and LiAlO 2 .
  • the suitable substrate Prior to growth, the suitable substrate can be treated in many different ways in-situ or ex-situ, or it may not be treated at all.
  • the non-polar epitaxial film can be nucleated and grown over different nucleation layers, such as GaN or AIN grown at various conditions and methods, or over a bare substrate.
  • the epitaxial film can be any non-polar m-plane III-Nitride material including, but not limited to, GaN, AIN, AlGaN and InGaN with various thicknesses.
  • the growth parameters required for the growth of non-polar m-plane III-Nitride material may vary from reactor to reactor.
  • the growth of m- ⁇ 1-100 ⁇ plane GaN has been successfully demonstrated by HVPE and MBE.
  • the present invention is the first-ever successful demonstration of high-quality planar non-polar m- ⁇ 1-100 ⁇ plane GaN growth by MOCVD.
  • planar m-plane GaN has an advantage over growth of planar a- ⁇ 11-20 ⁇ GaN with MOCVD in terms of its stability with a large growth window. This was shown when growth variables such as temperature, pressure and precursor flows for AlN nucleation layer and GaN epitaxial film were changed.
  • V/III ratios of 400-5500 and 200-3000, growth pressures varying in between 50-760 Torr, and temperature series of 1100° C.-1275° C. and 1000° C.-1160° C. for AIN and GaN layers were tested, respectively. Alterations in such conditions did not affect the crystal and surface quality significantly unlike the planar non-polar a-plane GaN films in which crystal and surface quality are extremely susceptible to change in growth conditions and constrained with small growth window.

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Abstract

A method of growing planar non-polar m-plane III-Nitride material, such as an m-plane gallium nitride (GaN) epitaxial layer, wherein the III-Nitride material is grown on a suitable substrate, such as an m-plane silicon carbide (m-SiC) substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer such as an aluminum nitride (AIN) on the annealed substrate, and growing the non-polar m-plane III-Nitride epitaxial layer on the nucleation layer using MOCVD.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application claims the benefit under 35 U.S.C. Section 19(e) of the following co-pending and commonly-assigned U.S. patent application:
  • U.S. Provisional Patent Application Ser. No. 60/685,908, filed on May 31, 2005, by Bilge M. Imer, James S. Speck and Steven P. Denbaars, entitled “GROWTH OF PLANAR NON-POLAR {1-100} M-PLANE GALLIUM NITRIDE WITH METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD),” attorneys' docket no. 30794.136-US-P1 (2005-566);
  • which application is incorporated by reference herein.
  • This application is related to the following co-pending and commonly-assigned applications:
  • U.S. Utility Patent Application Ser. No. ______, filed on same date herewith, by Bilge M. Imer, James S. Speck and Steven P. DenBaars, entitled “DEFECT REDUCTION OF NON-POLAR AND SEMI-POLAR III-NITRIDES WITH SIDEWALL LATERAL EPITAXIAL OVERGROWTH (SLEO),” attorneys' docket no. 30794.135-US-U1 (2005-565), which application claims the benefit under 35 U.S.C. Section 119(e) of U.S. Provisional Patent Application Ser. No. 60/685,952, filed on May 31, 2005 by Bilge M. Imer, James S. Speck and Steven P. DenBaars, entitled “DEFECT REDUCTION OF NON-POLAR GALLIUM NITRIDE WITH SINGLE-STEP SIDEWALL LATERAL EPITAXIAL OVERGROWTH,” attorneys' docket no. 30794.135-US-P1 (2005-565);
  • U.S. Utility Patent Application Ser. No. 10/537,385, filed Jun. 3, 2005, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.094-US-Wo (2002-225-2), which application claims priority to International Patent Application No. PCT/US03/21916, filed Jul. 15, 2003, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.94-WO-U1 (2003-225-2), which application claims priority to U.S. Provisional Patent Application Ser. No. 60/433,844, filed Dec. 16, 2002, by Benjamin A. Haskell, Paul T. Fini, Shigemasa Matsuda, Michael D. Craven, Steven P. DenBaars, James S. Speck, and Shuji Nakamura, entitled “TECHNIQUE FOR THE GROWTH OF PLANAR, NON-POLAR A-PLANE GALLIUM NITRIDE BY HYDRIDE VAPOR PHASE EPITAXY,” attorneys docket number 30794.94-US-P1 (2003-225-1); and
  • U.S. Utility Patent Application Ser. No. 10/413,691, filed Apr. 15, 2003, by Michael D. Craven and James S. Speck, entitled “NON-POLAR A-PLANE GALLIUM NITRIDE THIN FILMS GROWN BY METALORGANIC CHEMICAL VAPOR DEPOSITION,” attorneys docket number 30794.100-US-U1 (2002-294-2), which application claims priority to U.S. Provisional Patent Application Ser. No. 60/372,909, filed Apr. 15, 2002, by Michael D. Craven, Stacia Keller, Steven P. DenBaars, Tal Margalith, James S. Speck, Shuji Nakamura, and Umesh K. Mishra, entitled “NON-POLAR GALLIUM NITRIDE BASED THIN FILMS AND HETEROSTRUCTURE MATERIALS,” attorneys docket number 30794.95-US-P1 (2002-294/301/303);
  • all of which applications are incorporated by reference herein.
    • BACKGROUND OF THE INVENTION
  • 1. Field of the Invention
  • The present invention relates to the growth of planar non-polar {1-1 0 0} m-plane gallium nitride (GaN) with metalorganic chemical vapor deposition (MOCVD).
  • 2. Description of the Related Art
  • Gallium nitride (GaN) and its ternary and quaternary compounds are prime candidates for fabrication of visible and ultraviolet high-power and high-performance optoelectronic devices and electronic devices. These devices are typically grown epitaxially by growth techniques including molecular beam epitaxy (MBE), metalorganic chemical vapor deposition (MOCVD), or hydride vapor phase epitaxy (HVPE).
  • The selection of substrate is critical for achieving the desired GaN growth orientation. Some of the most widely used substrates for III-N growth include SiC, Al2O3, and LiAlO2. Various crystallographic orientations of these substrates are commercially available.
  • FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of interest in hexagonal GaN. Specifically, these schematics show the different crystallographic growth directions and also the planes of interest in the hexagonal wurtzite GaN structure, wherein FIG. 1(a) shows the crystallographic directions a1, a2, a3, c, <10-10> and <11-20>, and FIG. 1 (b) shows planes a (11-20), m (10-10) and r (10-12). The fill patterns of FIG. 1 (b) are intended to illustrate the planes of interest, but do not represent the materials of the structure.
  • It is relatively easy to grow planar c-plane GaN due to its large growth stability window. Therefore, nearly all GaN-based devices are grown parallel to the polar c-axis. However, as a result of c-plane growth, each material layer suffers from separation of electrons and holes to opposite faces of the layers. Furthermore, strain at the interfaces between adjacent layers gives rise to piezoelectric polarization, causing further charge separation.
  • FIGS. 2(a) and 2(b), which are schematics of band bending and electron hole separation as a result of polarization, show this effect, wherein FIG. 2(a) is a graph of energy (eV) vs. depth (nm) and represents a c-plane quantum well, while FIG. 2(b) is a graph of energy (eV) vs. depth (nm) and represents a non-polar quantum well.
  • Such polarization effects decrease the likelihood of electrons and holes recombining, causing the final device to perform poorly. One possible approach for eliminating piezoelectric polarization effects in GaN optoelectronic devices is to grow the devices on non-polar planes of the crystal such as a-{11-20} and m-{1-100} planes family of GaN. Such planes contain equal numbers of Ga and N atoms and are charge-neutral.
  • Planar {1-100} m-plane GaN growth has been developed by HVPE and MBE methods. However, prior to the invention described herein, planar m-plane GaN growth had not been accomplished with MOCVD.
    • SUMMARY OF THE INVENTION
  • The general purpose of the present invention is to grow planar non-polar m-{1-100} plane GaN material using MOCVD. The method includes performing a solvent clean and acid dip of an m-SiC substrate to remove oxide from the surface of the substrate ex situ prior to growth, in situ annealing of the substrate, growing an aluminum nitride (AIN) nucleation layer on the annealed substrate, and growing the non-polar m-plane GaN epitaxial layer on the nucleation layer with MOCVD. The present invention takes advantage of non-polar nature of m-plane GaN to eliminate polarization fields, and gives rise to flexibility in growth variables, such as temperature, pressure and precursor flows, utilizing the advantage of m-GaN stability during growth.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Referring now to the drawings in which like reference numbers represent corresponding parts throughout:
  • FIGS. 1(a) and 1(b) are schematics of crystallographic directions and planes of interest in hexagonal GaN.
  • FIGS. 2(a) and 2(b) are schematics of band bending and electron hole separation as a result of polarization.
  • FIG. 3 provides a structural characterization of non-polar planar m-plane GaN on m-plane SiC, from top to bottom, wherein the crystal plane of interest is shown in a unit cell/
  • FIG. 4 is a 5 μm×5 μm atomic force microscopy (AFM) surface image with a surface roughness value 2.54 nm.
  • FIG. 5 is a graph that illustrates the xray diffraction rocking curves for on-axis and off-axis.
  • FIG. 6 is a flowchart that illustrates the processing steps for growing planar m-plane III-Nitrides using MOCVD according to the preferred embodiment of the present invention.
  • FIG. 7 further illustrates the results of the processing steps of FIG. 6 according to the preferred embodiment of the present invention.
    • DETAILED DESCRIPTION OF THE INVENTION
  • In the following description of the preferred embodiment, reference is made to the accompanying drawings that form a part hereof, and in which is shown by way of illustration a specific embodiment in which the invention may be practiced. It is to be understood that other embodiments may be utilized and structural changes may be made without departing from the scope of the present invention.
  • Overview
  • The growth of (Ga, In, Al, B) N materials in the polar [0001] c-direction causes lower performance in optical devices due to polarization fields causing charge separation along the primary conduction direction. Therefore, recent research has been conducted focusing on non-polar direction growth along a-[11-20] and m-[1-100] directions of these materials to eliminate such effects and so to improve the device performance significantly. While both a-plane and m-plane growth of GaN has been explored by HVPE and MBE, only non-polar a-{11-20} plane growth of GaN has been demonstrated by MOCVD. However, it has been found that the growth window for planar a-plane GaN is very small and this specific orientation is very sensitive to changes in growth variables such as pressure and precursor flows. This resulted in the exploration of a new non-polar orientation in GaN growth with MOCVD. However, for m-plane growth, substrate availability has been a problem due to high growth temperatures required in MOCVD. Commercially available substrates such as γ-LiAlO2 have melting points lower than the temperature required for MOCVD growth. With the emergence of commercially obtainable m-SiC substrates, which are stable during MOCVD growth, the current invention was made possible. The present invention is the first ever successful growth of m-{1-100} plane GaN on m-SiC by MOCVD.
  • Technical Description
  • The m-plane SiC substrate is annealed in hydrogen prior to growth. An AIN layer is formed as a nucleation layer before GaN film growth. Finally, a GaN layer is grown by MOCVD. FIG. 3 illustrates the non-polar m-plane GaN (1-100) crystal plane of interest in the unit cell.
  • To accomplish the optimum quality m-plane GaN, V/III ratios of 400-5500 and 200-3000, growth pressures varying in between 50-760 Torr, and temperature series of 1100° C.-1275° C. and 1000° C.-1160° C. for AIN and GaN layers were tested, respectively. The m-plane, for both AIN and GaN, was stable over this wide range of temperatures, reactor pressures, and precursor flows.
  • The optimum AIN nucleation layers, leading to best quality GaN films, were realized at temperatures over 1175° C., at relatively low pressures, and V/III ratio of ˜3500 with the nucleation layer thickness below 150 nm.
  • For GaN layer epitaxy, the most favorable conditions were realized at low pressures, such as below 100 Torr, at temperatures in the range of 1100° C.-1160° C., and at V/III ratios below 700 with low NH3 vapor pressure.
  • A 5 μm×5 μm atomic force microscopy (AFM) surface image of the resulting m-plane GaN material is shown in FIG. 4. The grains are oriented along the <11-20> direction and the surface roughness value (root mean square) is ˜2.54 nm for a 5 μm×5 μm scan.
  • FIG. 5 is a graph of omega (degrees) vs. counts/second showing the x-ray diffraction rocking curves on-axis and off-axis. As can been seen from Table 1 below, on-axis (1-100) full width at half max (FWHM) values are measured as low as 0.22° and 1.2°, for a-mosaic and c-mosaic, respectively, and the off-axis (10-12) reflection has FWHM value of 0.38°. These roughness and FWHM values were found to not change significantly by changing growth conditions of the nucleation layer and epitaxial GaN film itself.
    Rocking curve FWHM values
    On-Axis Values
    a-mosaic c-mosaic Off-Axis
    0.22° 1.2° 0.38°
  • Process Steps
  • FIG. 6 is a flowchart that illustrates the processing steps for growing a planar non polar {1-100} m-plane III-Nitride epitaxial film using MOCVD according to the preferred embodiment of the present invention, wherein the planar non polar m-plane III-Nitride epitaxial film may comprise a planar m-plane GaN epitaxial layer. FIG. 7 further illustrates the results of each of the processing steps of FIG. 6.
  • Block 600 represents a solvent clean and acid dip of a suitable substrate (700), for example, in a 1:10 diluted BHF:DI solution, to remove oxide (702) from the substrate (700) surface before loading the substrate (700) into a reactor for the growth step. (Although this step is recommended, its omission would not significantly alter the results.) The substrate (700) may comprise an m-SiC or any substrate that is suitable for non-polar m-plane III-Nitride growth.
  • Block 602 represents in situ annealing of the substrate (700), for example, in hydrogen, prior to the growth step. (Although this step is recommended, its omission would not significantly alter the results.)
  • Block 604 represents growing a nucleation layer (704) on the substrate (700). The nucleation layer (704) typically comprises an aluminum nitride (AIN) nucleation layer or interlayer, but may comprise any nucleation layer (704) that is appropriate for non-polar m-plane III-Nitride growth. Moreover, the nucleation layer (704) may be grown after the annealing step, and prior to the non polar m-plane III-Nitride growth.
  • Block 606 represents growing the non-polar m-plane III-Nitride epitaxial layer (706) using MOCVD. The non-polar m-plane III-Nitride epitaxial layer (706) typically comprises a non-polar m-plane GaN epitaxial layer, but may comprise other non-polar m-plane III-Nitride epitaxial layers as well. Moreover, the non-polar m-plane III-Nitride epitaxial layer (706) may be grown on the nucleation layer (704), or on the substrate (700) itself.
  • Preferably, the end result is a device, or a free standing wafer, or a substrate, or a template, having a planar epitaxial layer of the non-polar m-plane III-Nitride.
  • Possible Modifications and Variations
  • Although the preferred embodiment describes the MOCVD growth of non-polar m-GaN on m-SiC using an AIN interlayer, alternative suitable substrates, on which the non-polar m-plane III-Nitride epitaxial film could be formed, include, but are not limited to, 6H or 4H m-plane SiC, freestanding m-GaN, LiGaO2 and LiAlO2.
  • Prior to growth, the suitable substrate can be treated in many different ways in-situ or ex-situ, or it may not be treated at all.
  • The non-polar epitaxial film can be nucleated and grown over different nucleation layers, such as GaN or AIN grown at various conditions and methods, or over a bare substrate.
  • The epitaxial film can be any non-polar m-plane III-Nitride material including, but not limited to, GaN, AIN, AlGaN and InGaN with various thicknesses.
  • The growth parameters required for the growth of non-polar m-plane III-Nitride material may vary from reactor to reactor.
  • Finally, it is understood that processing steps may be omitted, added or rearranged as desired.
  • Such variations do not fundamentally alter the general practice of this invention.
  • Advantages and Improvements
  • The growth of m-{1-100} plane GaN has been successfully demonstrated by HVPE and MBE. However, the present invention is the first-ever successful demonstration of high-quality planar non-polar m-{1-100} plane GaN growth by MOCVD.
  • Growth of planar m-plane GaN has an advantage over growth of planar a-{11-20} GaN with MOCVD in terms of its stability with a large growth window. This was shown when growth variables such as temperature, pressure and precursor flows for AlN nucleation layer and GaN epitaxial film were changed.
  • To accomplish the optimum quality m-plane GaN, V/III ratios of 400-5500 and 200-3000, growth pressures varying in between 50-760 Torr, and temperature series of 1100° C.-1275° C. and 1000° C.-1160° C. for AIN and GaN layers were tested, respectively. Alterations in such conditions did not affect the crystal and surface quality significantly unlike the planar non-polar a-plane GaN films in which crystal and surface quality are extremely susceptible to change in growth conditions and constrained with small growth window.
  • The growth stability advantage combined with the non-polar nature of m-GaN brings new possibilities in III-Nitride non-polar device research.
    • REFERENCES
  • The following reference is incorporated by reference herein:
  • 1. “Molecular-beam epitaxy of GaN/AlxGa1-xN multiple quantum wells on R-plane (10-12) sapphire substrates,” H. M. Ng, Appl. Phys. Lett. 80, 4369 (2002)
  • Conclusion
  • This concludes the description of the preferred embodiment of the present invention. The foregoing description of one or more embodiments of the invention has been presented for the purposes of illustration and description. It is not intended to be exhaustive or to limit the invention to the precise form disclosed. Many modifications and variations are possible in light of the above teaching, such as additional adjustments to the process described herein, without fundamentally deviating from the essence of the present invention. It is intended that the scope of the invention be limited not by this detailed description, but rather by the claims appended hereto.

Claims (11)

1. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-{1-100} plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD).
2. The method of claim 1, wherein the substrate comprises an m-silicon carbide (SiC) substrate.
3. The method of claim 1, wherein the non polar m-plane III-Nitride comprises m-plane gallium nitride (GaN).
4. The method of claim 1, further comprising performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface prior to the growing step.
5. The method of claim 1, further comprising annealing the substrate prior to the growing step.
6. The method of claim 1, further comprising growing a nucleation layer on the substrate and growing the non-polar m-plane Ill-Nitride on the nucleation layer.
7. The method of claim 1, wherein the nucleation layer comprises aluminum nitride (AIN).
8. The method of claim 1, further comprising:
(1) annealing the substrate;
(2) growing a nucleation layer on the substrate after the annealing step; and
(3) growing the non polar m-plane III-Nitride on the nucleation layer.
9. The method of claim 1, wherein the non-polar m-plane III-Nitride is a planar epitaxial layer.
10. A device, wafer, substrate or template fabricated using the method of claim 1.
11. A method of growing a planar non-polar m-plane III-Nitride epitaxial film, comprising:
(a) growing non-polar m-plane III-Nitride on a suitable substrate using metalorganic chemical vapor deposition (MOCVD), comprising:
(1) performing a solvent clean and acid dip of the substrate to remove oxide from the substrate surface;
(2) annealing the substrate after performing the solvent clean and acid dip;
(3) growing a nucleation layer on the substrate after the annealing step; and
(4) growing a planar epitaxial layer of the non polar m-plane III-Nitride on the nucleation layer.
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Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070234946A1 (en) * 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
US20080164489A1 (en) * 2006-12-11 2008-07-10 The Regents Of The University Of California Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices
US20090008647A1 (en) * 2007-07-06 2009-01-08 Sharp Laboratories Of America Inc. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
US20090079034A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride semiconductor and growth method
US20090174038A1 (en) * 2007-01-19 2009-07-09 Wang Nang Wang Production of single-crystal semiconductor material using a nanostructure template
US20090243043A1 (en) * 2006-03-23 2009-10-01 Wang Nang Wang Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
US20100012948A1 (en) * 2008-07-16 2010-01-21 Ostendo Technologies, Inc. Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
US20100244087A1 (en) * 2007-11-21 2010-09-30 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
US20110108954A1 (en) * 2009-11-06 2011-05-12 Ostendo Technologies, Inc. Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
US20110179993A1 (en) * 2009-03-06 2011-07-28 Akira Inoue Crystal growth process for nitride semiconductor, and method for manufacturing semiconductor device
US20110203514A1 (en) * 2008-11-07 2011-08-25 The Regents Of The University Of California Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals
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US20130337619A1 (en) * 2012-06-18 2013-12-19 Fujitsu Limited Compound semiconductor device and method for manufacturing the same
US20150053916A1 (en) * 2013-08-22 2015-02-26 Nanoco Technologies Ltd. Gas Phase Enhancement of Emission Color Quality in Solid State LEDs
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US20080083431A1 (en) * 2006-10-06 2008-04-10 Mark Schwarze Device and method for clearing debris from the front of a hood in a mechanized sweepers
US9064706B2 (en) * 2006-11-17 2015-06-23 Sumitomo Electric Industries, Ltd. Composite of III-nitride crystal on laterally stacked substrates
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WO2010065163A2 (en) * 2008-06-05 2010-06-10 Soraa, Inc. Highly polarized white light source by combining blue led on semipolar or nonpolar gan with yellow led on semipolar or nonpolar gan
US8097081B2 (en) * 2008-06-05 2012-01-17 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US8871024B2 (en) 2008-06-05 2014-10-28 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
US9157167B1 (en) 2008-06-05 2015-10-13 Soraa, Inc. High pressure apparatus and method for nitride crystal growth
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US20100006873A1 (en) * 2008-06-25 2010-01-14 Soraa, Inc. HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN
US20090320745A1 (en) * 2008-06-25 2009-12-31 Soraa, Inc. Heater device and method for high pressure processing of crystalline materials
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US8805134B1 (en) 2012-02-17 2014-08-12 Soraa Laser Diode, Inc. Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices
US7875534B2 (en) * 2008-07-21 2011-01-25 Taiwan Semiconductor Manufacturing Company, Ltd. Realizing N-face III-nitride semiconductors by nitridation treatment
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US8284810B1 (en) 2008-08-04 2012-10-09 Soraa, Inc. Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods
US8979999B2 (en) * 2008-08-07 2015-03-17 Soraa, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8021481B2 (en) * 2008-08-07 2011-09-20 Soraa, Inc. Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride
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US10036099B2 (en) 2008-08-07 2018-07-31 Slt Technologies, Inc. Process for large-scale ammonothermal manufacturing of gallium nitride boules
US8377796B2 (en) 2008-08-11 2013-02-19 Taiwan Semiconductor Manufacturing Company, Ltd. III-V compound semiconductor epitaxy from a non-III-V substrate
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US8148801B2 (en) 2008-08-25 2012-04-03 Soraa, Inc. Nitride crystal with removable surface layer and methods of manufacture
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USRE47114E1 (en) 2008-12-12 2018-11-06 Slt Technologies, Inc. Polycrystalline group III metal nitride with getter and method of making
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US8252662B1 (en) 2009-03-28 2012-08-28 Soraa, Inc. Method and structure for manufacture of light emitting diode devices using bulk GaN
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US8837545B2 (en) 2009-04-13 2014-09-16 Soraa Laser Diode, Inc. Optical device structure using GaN substrates and growth structures for laser applications
US8254425B1 (en) 2009-04-17 2012-08-28 Soraa, Inc. Optical device structure using GaN substrates and growth structures for laser applications
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WO2010120819A1 (en) 2009-04-13 2010-10-21 Kaai, Inc. Optical device structure using gan substrates for laser applications
US8634442B1 (en) 2009-04-13 2014-01-21 Soraa Laser Diode, Inc. Optical device structure using GaN substrates for laser applications
US8242522B1 (en) 2009-05-12 2012-08-14 Soraa, Inc. Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm
US8416825B1 (en) 2009-04-17 2013-04-09 Soraa, Inc. Optical device structure using GaN substrates and growth structure for laser applications
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
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US8306081B1 (en) 2009-05-27 2012-11-06 Soraa, Inc. High indium containing InGaN substrates for long wavelength optical devices
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US8509275B1 (en) 2009-05-29 2013-08-13 Soraa, Inc. Gallium nitride based laser dazzling device and method
US8247887B1 (en) 2009-05-29 2012-08-21 Soraa, Inc. Method and surface morphology of non-polar gallium nitride containing substrates
US9250044B1 (en) 2009-05-29 2016-02-02 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser diode dazzling devices and methods of use
US9829780B2 (en) 2009-05-29 2017-11-28 Soraa Laser Diode, Inc. Laser light source for a vehicle
JP2011016676A (en) * 2009-07-07 2011-01-27 Sumitomo Electric Ind Ltd Method for producing nitride semiconductor substrate
CN102482450B (en) 2009-07-24 2013-11-20 提克纳有限责任公司 Thermally conductive polymer compositions and articles made therefrom
US9090751B2 (en) 2009-07-24 2015-07-28 Ticona Llc Thermally conductive thermoplastic resin compositions and related applications
US8153475B1 (en) 2009-08-18 2012-04-10 Sorra, Inc. Back-end processes for substrates re-use
US20110056429A1 (en) * 2009-08-21 2011-03-10 Soraa, Inc. Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices
US8207554B2 (en) * 2009-09-11 2012-06-26 Soraa, Inc. System and method for LED packaging
US8314429B1 (en) 2009-09-14 2012-11-20 Soraa, Inc. Multi color active regions for white light emitting diode
US8355418B2 (en) 2009-09-17 2013-01-15 Soraa, Inc. Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates
US8750342B1 (en) 2011-09-09 2014-06-10 Soraa Laser Diode, Inc. Laser diodes with scribe structures
US8933644B2 (en) 2009-09-18 2015-01-13 Soraa, Inc. LED lamps with improved quality of light
US9293644B2 (en) 2009-09-18 2016-03-22 Soraa, Inc. Power light emitting diode and method with uniform current density operation
US9583678B2 (en) 2009-09-18 2017-02-28 Soraa, Inc. High-performance LED fabrication
CN102630349B (en) 2009-09-18 2017-06-13 天空公司 Method power led and using current density operation
US20110186887A1 (en) * 2009-09-21 2011-08-04 Soraa, Inc. Reflection Mode Wavelength Conversion Material for Optical Devices Using Non-Polar or Semipolar Gallium Containing Materials
US8435347B2 (en) 2009-09-29 2013-05-07 Soraa, Inc. High pressure apparatus with stackable rings
US9175418B2 (en) 2009-10-09 2015-11-03 Soraa, Inc. Method for synthesis of high quality large area bulk gallium based crystals
US8269245B1 (en) 2009-10-30 2012-09-18 Soraa, Inc. Optical device with wavelength selective reflector
CN102422391B (en) * 2009-11-12 2013-11-27 松下电器产业株式会社 Manufacturing method of nitride semiconductor device
US20110186874A1 (en) 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
US20110215348A1 (en) 2010-02-03 2011-09-08 Soraa, Inc. Reflection Mode Package for Optical Devices Using Gallium and Nitrogen Containing Materials
US10147850B1 (en) 2010-02-03 2018-12-04 Soraa, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8905588B2 (en) 2010-02-03 2014-12-09 Sorra, Inc. System and method for providing color light sources in proximity to predetermined wavelength conversion structures
US8716049B2 (en) * 2010-02-23 2014-05-06 Applied Materials, Inc. Growth of group III-V material layers by spatially confined epitaxy
US9927611B2 (en) 2010-03-29 2018-03-27 Soraa Laser Diode, Inc. Wearable laser based display method and system
US8451876B1 (en) 2010-05-17 2013-05-28 Soraa, Inc. Method and system for providing bidirectional light sources with broad spectrum
US9564320B2 (en) 2010-06-18 2017-02-07 Soraa, Inc. Large area nitride crystal and method for making it
US8803452B2 (en) 2010-10-08 2014-08-12 Soraa, Inc. High intensity light source
US8729559B2 (en) 2010-10-13 2014-05-20 Soraa, Inc. Method of making bulk InGaN substrates and devices thereon
US8816319B1 (en) 2010-11-05 2014-08-26 Soraa Laser Diode, Inc. Method of strain engineering and related optical device using a gallium and nitrogen containing active region
US8975615B2 (en) 2010-11-09 2015-03-10 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material
US9048170B2 (en) 2010-11-09 2015-06-02 Soraa Laser Diode, Inc. Method of fabricating optical devices using laser treatment
US9025635B2 (en) 2011-01-24 2015-05-05 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a support member
US9595813B2 (en) 2011-01-24 2017-03-14 Soraa Laser Diode, Inc. Laser package having multiple emitters configured on a substrate member
US8786053B2 (en) 2011-01-24 2014-07-22 Soraa, Inc. Gallium-nitride-on-handle substrate materials and devices and method of manufacture
US9318875B1 (en) 2011-01-24 2016-04-19 Soraa Laser Diode, Inc. Color converting element for laser diode
US9093820B1 (en) 2011-01-25 2015-07-28 Soraa Laser Diode, Inc. Method and structure for laser devices using optical blocking regions
US8643257B2 (en) 2011-02-11 2014-02-04 Soraa, Inc. Illumination source with reduced inner core size
US8618742B2 (en) * 2011-02-11 2013-12-31 Soraa, Inc. Illumination source and manufacturing methods
US8525396B2 (en) * 2011-02-11 2013-09-03 Soraa, Inc. Illumination source with direct die placement
US10036544B1 (en) 2011-02-11 2018-07-31 Soraa, Inc. Illumination source with reduced weight
US8324835B2 (en) * 2011-02-11 2012-12-04 Soraa, Inc. Modular LED lamp and manufacturing methods
US8884517B1 (en) 2011-10-17 2014-11-11 Soraa, Inc. Illumination sources with thermally-isolated electronics
US8482104B2 (en) 2012-01-09 2013-07-09 Soraa, Inc. Method for growth of indium-containing nitride films
CN102544276A (en) * 2012-02-28 2012-07-04 华南理工大学 Nonpolar GaN film grown on LiGaO2 substrate and its preparation method and application
US9076896B2 (en) 2012-03-21 2015-07-07 Seoul Viosys Co., Ltd. Method of fabricating nonpolar gallium nitride-based semiconductor layer, nonpolar semiconductor device, and method of fabricating the same
JP5811009B2 (en) * 2012-03-30 2015-11-11 豊田合成株式会社 Group III nitride semiconductor manufacturing method and group III nitride semiconductor
DE202013012940U1 (en) 2012-05-04 2023-01-19 Soraa, Inc. LED lamps with improved light quality
KR101946010B1 (en) 2012-10-23 2019-02-08 삼성전자주식회사 Structure having large area gallium nitride substrate and method of manufacturing the same
US9166372B1 (en) 2013-06-28 2015-10-20 Soraa Laser Diode, Inc. Gallium nitride containing laser device configured on a patterned substrate
US9368939B2 (en) 2013-10-18 2016-06-14 Soraa Laser Diode, Inc. Manufacturable laser diode formed on C-plane gallium and nitrogen material
US9520695B2 (en) 2013-10-18 2016-12-13 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
US9379525B2 (en) 2014-02-10 2016-06-28 Soraa Laser Diode, Inc. Manufacturable laser diode
US9362715B2 (en) 2014-02-10 2016-06-07 Soraa Laser Diode, Inc Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material
EP3220429A1 (en) 2014-02-05 2017-09-20 Soraa Inc. High-performance led fabrication
US9209596B1 (en) 2014-02-07 2015-12-08 Soraa Laser Diode, Inc. Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates
US9871350B2 (en) 2014-02-10 2018-01-16 Soraa Laser Diode, Inc. Manufacturable RGB laser diode source
US9520697B2 (en) 2014-02-10 2016-12-13 Soraa Laser Diode, Inc. Manufacturable multi-emitter laser diode
CN104600162B (en) * 2014-03-24 2016-01-27 上海卓霖半导体科技有限公司 Based on the preparation method of the nonpolar blue-ray LED epitaxial wafer of LAO substrate
US9564736B1 (en) 2014-06-26 2017-02-07 Soraa Laser Diode, Inc. Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode
KR102164796B1 (en) 2014-08-28 2020-10-14 삼성전자주식회사 Nano-sturucture semiconductor light emitting device
US12126143B2 (en) 2014-11-06 2024-10-22 Kyocera Sld Laser, Inc. Method of manufacture for an ultraviolet emitting optoelectronic device
US9246311B1 (en) 2014-11-06 2016-01-26 Soraa Laser Diode, Inc. Method of manufacture for an ultraviolet laser diode
US9666677B1 (en) 2014-12-23 2017-05-30 Soraa Laser Diode, Inc. Manufacturable thin film gallium and nitrogen containing devices
US9653642B1 (en) 2014-12-23 2017-05-16 Soraa Laser Diode, Inc. Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes
US10879673B2 (en) 2015-08-19 2020-12-29 Soraa Laser Diode, Inc. Integrated white light source using a laser diode and a phosphor in a surface mount device package
US11437775B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. Integrated light source using a laser diode
US11437774B2 (en) 2015-08-19 2022-09-06 Kyocera Sld Laser, Inc. High-luminous flux laser-based white light source
US10938182B2 (en) 2015-08-19 2021-03-02 Soraa Laser Diode, Inc. Specialized integrated light source using a laser diode
JP6684815B2 (en) * 2015-09-30 2020-04-22 日本碍子株式会社 Oriented alumina substrate for epitaxial growth
US9787963B2 (en) 2015-10-08 2017-10-10 Soraa Laser Diode, Inc. Laser lighting having selective resolution
US9608160B1 (en) 2016-02-05 2017-03-28 International Business Machines Corporation Polarization free gallium nitride-based photonic devices on nanopatterned silicon
WO2019015754A1 (en) * 2017-07-20 2019-01-24 Swegan Ab A heterostructure for a high electron mobility transistor and a method of producing the same
US10771155B2 (en) 2017-09-28 2020-09-08 Soraa Laser Diode, Inc. Intelligent visible light with a gallium and nitrogen containing laser source
US10222474B1 (en) 2017-12-13 2019-03-05 Soraa Laser Diode, Inc. Lidar systems including a gallium and nitrogen containing laser light source
CN108231924A (en) * 2018-02-28 2018-06-29 华南理工大学 It is grown in non polarity A lGaN base MSM type ultraviolet detectors in r surface sapphire substrates and preparation method thereof
US10551728B1 (en) 2018-04-10 2020-02-04 Soraa Laser Diode, Inc. Structured phosphors for dynamic lighting
US11421843B2 (en) 2018-12-21 2022-08-23 Kyocera Sld Laser, Inc. Fiber-delivered laser-induced dynamic light system
US11239637B2 (en) 2018-12-21 2022-02-01 Kyocera Sld Laser, Inc. Fiber delivered laser induced white light system
US11884202B2 (en) 2019-01-18 2024-01-30 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system
US12000552B2 (en) 2019-01-18 2024-06-04 Kyocera Sld Laser, Inc. Laser-based fiber-coupled white light system for a vehicle
US12152742B2 (en) 2019-01-18 2024-11-26 Kyocera Sld Laser, Inc. Laser-based light guide-coupled wide-spectrum light system
US11228158B2 (en) 2019-05-14 2022-01-18 Kyocera Sld Laser, Inc. Manufacturable laser diodes on a large area gallium and nitrogen containing substrate
US10903623B2 (en) 2019-05-14 2021-01-26 Soraa Laser Diode, Inc. Method and structure for manufacturable large area gallium and nitrogen containing substrate
EP3812487A1 (en) 2019-10-25 2021-04-28 Xie, Fengjie Non-polar iii-nitride binary and ternary materials, method for obtaining thereof and uses
US12191626B1 (en) 2020-07-31 2025-01-07 Kyocera Sld Laser, Inc. Vertically emitting laser devices and chip-scale-package laser devices and laser-based, white light emitting devices
US11688601B2 (en) 2020-11-30 2023-06-27 International Business Machines Corporation Obtaining a clean nitride surface by annealing

Citations (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5923950A (en) * 1996-06-14 1999-07-13 Matsushita Electric Industrial Co., Inc. Method of manufacturing a semiconductor light-emitting device
US6045626A (en) * 1997-07-11 2000-04-04 Tdk Corporation Substrate structures for electronic devices
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US6156581A (en) * 1994-01-27 2000-12-05 Advanced Technology Materials, Inc. GaN-based devices using (Ga, AL, In)N base layers
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US20020074552A1 (en) * 2000-12-14 2002-06-20 Weeks T. Warren Gallium nitride materials and methods
US20020084467A1 (en) * 1997-09-30 2002-07-04 Krames Michael R. Nitride semiconductor device with reduced polarization fields
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US6468882B2 (en) * 2000-07-10 2002-10-22 Sumitomo Electric Industries, Ltd. Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
US20030198837A1 (en) * 2002-04-15 2003-10-23 Craven Michael D. Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US20040094773A1 (en) * 1997-04-11 2004-05-20 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer
US20040261692A1 (en) * 2001-10-26 2004-12-30 Robert Dwilinski Substrate for epitaxy
US20050205884A1 (en) * 2004-03-19 2005-09-22 Lumileds Lighting U.S., Llc Semiconductor light emitting devices including in-plane light emitting layers
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09219540A (en) * 1996-02-07 1997-08-19 Rikagaku Kenkyusho Method of forming GaN thin film
JPH11297631A (en) * 1998-04-14 1999-10-29 Matsushita Electron Corp Method for growing nitride-based compound semiconductor
US6218280B1 (en) * 1998-06-18 2001-04-17 University Of Florida Method and apparatus for producing group-III nitrides
JP2000068609A (en) 1998-08-24 2000-03-03 Ricoh Co Ltd Semiconductor substrate and semiconductor laser
JP3592553B2 (en) * 1998-10-15 2004-11-24 株式会社東芝 Gallium nitride based semiconductor device
US20010047751A1 (en) * 1998-11-24 2001-12-06 Andrew Y. Kim Method of producing device quality (a1) ingap alloys on lattice-mismatched substrates
JP4097343B2 (en) * 1999-01-26 2008-06-11 日亜化学工業株式会社 Manufacturing method of nitride semiconductor laser device
US20010042503A1 (en) * 1999-02-10 2001-11-22 Lo Yu-Hwa Method for design of epitaxial layer and substrate structures for high-quality epitaxial growth on lattice-mismatched substrates
JP2001007394A (en) * 1999-06-18 2001-01-12 Ricoh Co Ltd Semiconductor substrate, manufacture thereof and semiconductor light emitting element
JP2001160656A (en) * 1999-12-01 2001-06-12 Sharp Corp Nitride compound semiconductor device
JP3946427B2 (en) 2000-03-29 2007-07-18 株式会社東芝 Epitaxial growth substrate manufacturing method and semiconductor device manufacturing method using this epitaxial growth substrate
JP2002076023A (en) * 2000-09-01 2002-03-15 Nec Corp Semiconductor device
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
US7105865B2 (en) * 2001-09-19 2006-09-12 Sumitomo Electric Industries, Ltd. AlxInyGa1−x−yN mixture crystal substrate
JP4201541B2 (en) 2002-07-19 2008-12-24 豊田合成株式会社 Semiconductor crystal manufacturing method and group III nitride compound semiconductor light emitting device manufacturing method
US7427555B2 (en) * 2002-12-16 2008-09-23 The Regents Of The University Of California Growth of planar, non-polar gallium nitride by hydride vapor phase epitaxy
US7186302B2 (en) * 2002-12-16 2007-03-06 The Regents Of The University Of California Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor deposition
US7432142B2 (en) * 2004-05-20 2008-10-07 Cree, Inc. Methods of fabricating nitride-based transistors having regrown ohmic contact regions
TWI377602B (en) * 2005-05-31 2012-11-21 Japan Science & Tech Agency Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd)
TW200703463A (en) * 2005-05-31 2007-01-16 Univ California Defect reduction of non-polar and semi-polar III-nitrides with sidewall lateral epitaxial overgrowth (SLEO)

Patent Citations (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6156581A (en) * 1994-01-27 2000-12-05 Advanced Technology Materials, Inc. GaN-based devices using (Ga, AL, In)N base layers
US6440823B1 (en) * 1994-01-27 2002-08-27 Advanced Technology Materials, Inc. Low defect density (Ga, Al, In)N and HVPE process for making same
US6072197A (en) * 1996-02-23 2000-06-06 Fujitsu Limited Semiconductor light emitting device with an active layer made of semiconductor having uniaxial anisotropy
US5923950A (en) * 1996-06-14 1999-07-13 Matsushita Electric Industrial Co., Inc. Method of manufacturing a semiconductor light-emitting device
US20040094773A1 (en) * 1997-04-11 2004-05-20 Nichia Chemical Industries, Ltd. Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor device
US6069021A (en) * 1997-05-14 2000-05-30 Showa Denko K.K. Method of growing group III nitride semiconductor crystal layer and semiconductor device incorporating group III nitride semiconductor crystal layer
US6045626A (en) * 1997-07-11 2000-04-04 Tdk Corporation Substrate structures for electronic devices
US20020084467A1 (en) * 1997-09-30 2002-07-04 Krames Michael R. Nitride semiconductor device with reduced polarization fields
US6201262B1 (en) * 1997-10-07 2001-03-13 Cree, Inc. Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structure
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6468882B2 (en) * 2000-07-10 2002-10-22 Sumitomo Electric Industries, Ltd. Method of producing a single crystal gallium nitride substrate and single crystal gallium nitride substrate
US20020187356A1 (en) * 2000-12-14 2002-12-12 Weeks T. Warren Gallium nitride materials and methods
US20020074552A1 (en) * 2000-12-14 2002-06-20 Weeks T. Warren Gallium nitride materials and methods
US20040251471A1 (en) * 2001-10-26 2004-12-16 Robert Dwilinski Light emitting element structure using nitride bulk single crystal layer
US20040261692A1 (en) * 2001-10-26 2004-12-30 Robert Dwilinski Substrate for epitaxy
US20030198837A1 (en) * 2002-04-15 2003-10-23 Craven Michael D. Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition
US20050245095A1 (en) * 2002-04-15 2005-11-03 The Regents Of The University Of California Growth of planar reduced dislocation density m-plane gallium nitride by hydride vapor phase epitaxy
US7091514B2 (en) * 2002-04-15 2006-08-15 The Regents Of The University Of California Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
US20060138431A1 (en) * 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
US20050205884A1 (en) * 2004-03-19 2005-09-22 Lumileds Lighting U.S., Llc Semiconductor light emitting devices including in-plane light emitting layers

Cited By (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090243043A1 (en) * 2006-03-23 2009-10-01 Wang Nang Wang Growth method using nanostructure compliant layers and hvpe for producing high quality compound semiconductor materials
US20070234946A1 (en) * 2006-04-07 2007-10-11 Tadao Hashimoto Method for growing large surface area gallium nitride crystals in supercritical ammonia and lagre surface area gallium nitride crystals
US20110037052A1 (en) * 2006-12-11 2011-02-17 The Regents Of The University Of California Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
US20080164489A1 (en) * 2006-12-11 2008-07-10 The Regents Of The University Of California Metalorganic chemical vapor deposittion (MOCVD) growth of high performance non-polar III-nitride optical devices
US20120199809A1 (en) * 2006-12-11 2012-08-09 Japan Science And Technology Agency Metalorganic chemical vapor deposition (mocvd) growth of high performance non-polar iii-nitride optical devices
US8178373B2 (en) * 2006-12-11 2012-05-15 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US8956896B2 (en) * 2006-12-11 2015-02-17 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US7842527B2 (en) * 2006-12-11 2010-11-30 The Regents Of The University Of California Metalorganic chemical vapor deposition (MOCVD) growth of high performance non-polar III-nitride optical devices
US8828849B2 (en) 2007-01-19 2014-09-09 Nanogan Limited Production of single-crystal semiconductor material using a nanostructure template
US20090174038A1 (en) * 2007-01-19 2009-07-09 Wang Nang Wang Production of single-crystal semiconductor material using a nanostructure template
US7598108B2 (en) * 2007-07-06 2009-10-06 Sharp Laboratories Of America, Inc. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
US20090008647A1 (en) * 2007-07-06 2009-01-08 Sharp Laboratories Of America Inc. Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers
US20090079034A1 (en) * 2007-09-26 2009-03-26 Wang Nang Wang Non-polar iii-v nitride semiconductor and growth method
US8652947B2 (en) * 2007-09-26 2014-02-18 Wang Nang Wang Non-polar III-V nitride semiconductor and growth method
US20100244087A1 (en) * 2007-11-21 2010-09-30 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
US8652948B2 (en) * 2007-11-21 2014-02-18 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
US20100012948A1 (en) * 2008-07-16 2010-01-21 Ostendo Technologies, Inc. Growth of Planar Non-Polar M-Plane and Semi-Polar Gallium Nitride with Hydride Vapor Phase Epitaxy (HVPE)
US8673074B2 (en) 2008-07-16 2014-03-18 Ostendo Technologies, Inc. Growth of planar non-polar {1 -1 0 0} M-plane and semi-polar {1 1 -2 2} gallium nitride with hydride vapor phase epitaxy (HVPE)
US20110203514A1 (en) * 2008-11-07 2011-08-25 The Regents Of The University Of California Novel vessel designs and relative placements of the source material and seed crystals with respect to the vessel for the ammonothermal growth of group-iii nitride crystals
US20110179993A1 (en) * 2009-03-06 2011-07-28 Akira Inoue Crystal growth process for nitride semiconductor, and method for manufacturing semiconductor device
US20110108954A1 (en) * 2009-11-06 2011-05-12 Ostendo Technologies, Inc. Growth of Planar Non-Polar M-Plane Gallium Nitride With Hydride Vapor Phase Epitaxy (HVPE)
US8629065B2 (en) 2009-11-06 2014-01-14 Ostendo Technologies, Inc. Growth of planar non-polar {10-10} M-plane gallium nitride with hydride vapor phase epitaxy (HVPE)
CN102597340A (en) * 2009-11-10 2012-07-18 株式会社德山 Manufacturing method of laminated body
CN102412123A (en) * 2011-11-07 2012-04-11 中山市格兰特实业有限公司火炬分公司 Preparation method of aluminum nitride
US20130337619A1 (en) * 2012-06-18 2013-12-19 Fujitsu Limited Compound semiconductor device and method for manufacturing the same
US9595594B2 (en) * 2012-06-18 2017-03-14 Fujitsu Limited Compound semiconductor device and method for manufacturing the same
CN103151247A (en) * 2013-03-10 2013-06-12 北京工业大学 Method for preparing non-polar GaN film on r-face sapphire substrate
US20150053916A1 (en) * 2013-08-22 2015-02-26 Nanoco Technologies Ltd. Gas Phase Enhancement of Emission Color Quality in Solid State LEDs
US9574135B2 (en) * 2013-08-22 2017-02-21 Nanoco Technologies Ltd. Gas phase enhancement of emission color quality in solid state LEDs
CN106268521A (en) * 2016-08-29 2017-01-04 河南飞孟金刚石工业有限公司 A kind of synthesis technique that can improve polycrystalline diamond yield
CN106981415A (en) * 2017-04-19 2017-07-25 华南理工大学 The gallium nitride film and its nanometer epitaxial lateral overgrowth method of GaN HEMTs
CN112981368A (en) * 2021-02-03 2021-06-18 北航（四川）西部国际创新港科技有限公司 Improved CVD equipment and preparation method for realizing co-infiltration deposition of aluminum-silicon coating by using improved CVD equipment

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