US20060152210A1 - Current sensor - Google Patents
Current sensor Download PDFInfo
- Publication number
- US20060152210A1 US20060152210A1 US11/336,602 US33660206A US2006152210A1 US 20060152210 A1 US20060152210 A1 US 20060152210A1 US 33660206 A US33660206 A US 33660206A US 2006152210 A1 US2006152210 A1 US 2006152210A1
- Authority
- US
- United States
- Prior art keywords
- current
- substrate
- conductor portion
- current conductor
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/202—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices using Hall-effect devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L24/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L24/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L24/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R15/00—Details of measuring arrangements of the types provided for in groups G01R17/00 - G01R29/00, G01R33/00 - G01R33/26 or G01R35/00
- G01R15/14—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks
- G01R15/20—Adaptations providing voltage or current isolation, e.g. for high-voltage or high-current networks using galvano-magnetic devices, e.g. Hall-effect devices, i.e. measuring a magnetic field via the interaction between a current and a magnetic field, e.g. magneto resistive or Hall effect devices
- G01R15/207—Constructional details independent of the type of device used
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
- H01L2224/37—Structure, shape, material or disposition of the strap connectors prior to the connecting process of an individual strap connector
- H01L2224/37001—Core members of the connector
- H01L2224/37099—Material
- H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/37138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/37147—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/4005—Shape
- H01L2224/4009—Loop shape
- H01L2224/40095—Kinked
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73221—Strap and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/84801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/84—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a strap connector
- H01L2224/848—Bonding techniques
- H01L2224/8485—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Definitions
- This invention relates generally to electrical current sensors, and more particularly to a miniaturized current sensor in an integrated circuit package.
- one type of conventional current sensor uses a magnetic field transducer (for example a Hall effect or magnetoresistive transducer) in proximity to a current conductor.
- the magnetic field transducer generates an output signal having a magnitude proportional to the magnetic field induced by a current that flows through the current conductor.
- Some typical Hall effect current sensors include a gapped toroid magnetic flux concentrator, with the Hall effect element positioned in the toroid gap.
- the Hall effect device and toroid are assembled into a housing, which is mountable on a printed circuit board.
- a separate current conductor, such as a wire is passed through the center of the toroid.
- Such devices tend to be undesirably large, both in terms of height and circuit board area.
- Hall effect current sensors include a Hall effect element mounted on a dielectric material, for example a circuit board.
- a Hall effect element mounted on a dielectric material for example a circuit board.
- One such current sensor is described in a European Patent Application No. EP0867725.
- Still other Hall effect current sensors include a Hall effect element mounted on a substrate, for example a silicon substrate as described in a European Patent Application No. EP1111693.
- Sensitivity is related to the magnitude of a change in output voltage from the Hall effect transducer in response to a sensed current.
- Linearity is related to the degree to which the output voltage from the Hall effect transducer varies in direct proportion to the sensed current.
- the sensitivity of a current sensor is related to a variety of factors.
- One important factor is the flux concentration of the magnetic field generated in the vicinity of the current conductor and sensed by the Hall effect element. For this reason, some current sensors use a flux concentrator.
- an integrated circuit in accordance with the present invention, includes a lead frame portion having a plurality of leads and a current conductor portion comprising at least two of the plurality of leads.
- the integrated circuit also includes a substrate having first and second opposing surfaces. The first surface is proximate to the current conductor portion and the second surface is distal from the current conductor portion.
- the integrated circuit also includes one or more magnetic field sensing elements disposed proximate to the current conductor portion.
- the integrated circuit also includes a current sensing circuit disposed on the first surface of the substrate and coupled to the one or more magnetic field sensing elements.
- the current sensing circuit is adapted to provide an output signal indicative of a current flowing through the current conductor portion.
- the integrated circuit also includes an overcurrent circuit disposed on the first surface of the substrate. The overcurrent circuit is adapted to sense a voltage drop associated with a current and further adapted to provide an output signal in response to the voltage drop. The output signal from the overcurrent circuit is indicative of the current sensed by the overcurrent
- a method of manufacturing an integrated circuit includes providing a lead frame portion having a plurality of leads comprising at least two leads forming a current conductor portion.
- the method also includes forming one or more magnetic field transducers disposed proximate to the current conductor portion.
- the method also includes mounting the substrate to the lead frame portion so that the first surface of the substrate is proximate to the current conductor portion and the second surface of the substrate is distal from the current conductor portion.
- the method also includes forming a current sensing circuit on the first surface of the substrate and coupled to the one or more magnetic field sensing elements.
- the current sensing circuit is adapted to provide an output signal indicative of a current flowing through the current conductor portion.
- the method also includes forming an overcurrent circuit on the first surface of the substrate and coupled to the current conductor portion.
- the overcurrent circuit is adapted to sense a voltage drop associated with a current and further adapted to provide an output signal in response to the voltage drop.
- the output signal is indicative of the current sensed by the overcurrent circuit being above a predetermined current.
- FIG. 1 is an isometric view of a current sensor in accordance with the present invention
- FIG. 2 is a graph showing a relationship between position across a Hall effect element of the current sensor of FIG. 1 and magnetic field;
- FIG. 3 is an isometric view of another embodiment of a current sensor in accordance with the present invention.
- FIG. 4 is a schematic of a circuit forming part of the current sensor of FIG. 3 ;
- FIG. 5 is an isometric view of yet another embodiment of a current sensor in accordance with the present invention.
- FIG. 6 is an isometric view of still another embodiment of a current sensor in accordance with the present invention.
- FIG. 6A is an isometric view of still another embodiment of a current sensor in accordance with the present invention.
- FIG. 7 is an isometric view of still another embodiment of a current sensor in accordance with the present invention.
- FIG. 8 is a further isometric view of the current sensor of FIG. 7 ;
- FIG. 9 is an isometric view of an alternate lead frame having a thinner current conductor portion according to a further aspect of the invention.
- FIG. 9A is a cross-sectional view of an alternate embodiment of the current conductor portion of FIG. 9 ;
- FIG. 10 is an isometric view of still another embodiment of a current sensor in accordance with the present invention.
- FIG. 11 is an isometric view of an alternate arrangement of the current sensor of FIG. 10 ;
- FIG. 12 is an isometric view of another alternate arrangement of the current sensor of FIG. 10 .
- FIG. 13 is an isometric view of another alternate arrangement of the current sensor of FIG. 10 ;
- FIG. 13A is a cross-sectional view of the current sensor of FIG. 13 ;
- FIG. 14 is an isometric view of an alternate arrangement of the current sensor of FIGS. 7 and 8 ;
- FIG. 14A is a cross-sectional view of the current sensor of FIG. 14 ;
- FIG. 15 is a schematic drawing of an exemplary circuit that can be used in the current sensors of FIGS. 13, 13A , 14 , and 14 A, which includes a current sensing circuit and an overcurrent circuit; and
- FIG. 16 is an isometric view of another alternate arrangement of the current sensor of FIGS. 7 and 8 ;
- an exemplary current sensor 10 in accordance with the present invention includes a lead frame 12 having a plurality of leads 12 a - 12 h .
- the leads 12 a and 12 b are coupled to the leads 12 c and 12 d to form a current path, or current conductor with a narrow portion 14 having a width w 1 .
- the current sensor 10 also includes a substrate 16 having a first surface 16 a and a second, opposing surface 16 b .
- the substrate 16 has a magnetic field transducer 18 which, in some embodiments, can be a Hall effect element 18 , diffused into the first surface 16 a , or otherwise disposed on the first surface 16 a .
- the substrate 16 can be comprised of a semiconductor material, e.g., silicon, or, in an alternate embodiment, the substrate 16 can be comprised of an insulating material.
- the substrate 16 is disposed above the lead frame 12 so that the first surface 16 a is proximate to the current conductor portion 14 and the second surface 16 b is distal from the current conductor portion 14 and more specifically, so that the Hall effect element 18 is in close proximity to the current conductor portion 14 .
- the substrate 16 has an orientation that is upside down (i.e., the first surface 16 a is directed downward) relative to a conventional orientation with which a substrate is mounted in an integrated circuit package.
- the substrate 16 has bonding pads 20 a - 20 c on the first surface 16 a , to which bond wires 22 a - 22 c are coupled.
- the bond wires are further coupled to the leads 12 e , 12 f , 12 h of the lead frame 12 .
- An insulator 24 separates the substrate 16 from the lead frame 12 .
- the insulator 24 can be provided in a variety of ways.
- a first portion of the insulator 24 includes a four ⁇ m thick layer of a BCB resin material deposited directly on the first surface 16 a of the substrate 16 .
- a second portion of the insulator 24 may include a layer of underfill material, for example StaychipTM NUF-2071 E (Cookson Electronics Equipment, New Jersey), deposited on the lead frame 12 .
- Such an arrangement provides more than one thousand volts of isolation between the substrate 16 and the lead frame 12 .
- the current conductor portion 14 is but a part of the total path through which an electrical current flows.
- a current having a direction depicted by arrows 26 flows into the leads 12 c , 12 d , which are here shown to be electrically coupled in parallel, through the current conductor portion 14 , and out of the leads 12 a , 12 b , which are also shown here to be electrically coupled in parallel.
- the Hall effect element 18 is disposed in close proximity to the current conductor portion 14 and at a predetermined position relative to the conductor portion 14 , such that a magnetic field generated by an electrical current passing though the current conductor portion 14 , in a direction shown by arrows 26 , is in a direction substantially aligned with a maximum response axis of the Hall effect element 18 .
- the Hall effect element 18 generates a voltage output proportional to the magnetic field and therefore proportional to the current flowing through the current conductor portion 14 .
- the illustrated Hall effect element 18 has a maximum response axis substantially aligned with a z-axis 34 .
- the Hall effect element 18 is disposed just to the side (i.e., slightly offset along a y-axis 32 ) of the current conductor portion 14 , as shown, where the magnetic field is pointed substantially along the z-axis 34 .
- This position results in a greater voltage output from the Hall effect element 18 , and therefore improved sensitivity.
- a Hall effect element, or another type of magnetic field sensor, for example a magnetoresistance element, having maximum response axis aligned in another direction can be disposed at another position relative to the current conductor portion 14 , for example, on top of the current conductor portion 14 (in a direction along z-axis 34 ).
- Hall effect element 18 is shown on the first surface 16 a of the substrate 16 , it will be appreciated that more than one Hall effect element can be used, as shown in the embodiments of FIGS. 3 and 5 .
- additional circuitry for example an amplifier, can also be diffused in or otherwise disposed on, or supported by the first and/or second surfaces 16 a , 16 b of the substrate 16 . Exemplary circuitry of this type is shown in FIG. 4 .
- the close proximity between the Hall effect element 18 and the current conductor 14 is achieved by providing the Hall effect element 18 on the first substrate surface 16 a , which is positioned closer to the current conductor portion 14 than the second surface. In other embodiments, this advantageous close proximity is achieved by providing the Hall effect element 18 on the second substrate surface 16 b and forming the current conductor portion 14 so as to be in substantial alignment with the second surface 16 b , as shown in FIGS. 7 and 8 .
- a graph 50 illustrates the magnetic flux density in the direction of the z-axis 34 ( FIG. 1 ) across the Hall element 18 , along an x-axis 30 ( FIG. 1 ) and the y-axis 32 ( FIG. 1 ) in the plane of the Hall effect element 18 ( FIG. 1 ), for a current through current conductor portion 14 on the order of 10 A.
- a center (not shown) of the Hall effect element 18 corresponds to three hundred microns on an abscissa 52 .
- a mantissa 54 corresponds to magnetic flux.
- a magnetic flux curve 56 corresponds to the change in magnetic flux in the z-axis 34 relative to position along the x-axis 30 .
- Magnetic flux curve 58 corresponds to the change in magnetic flux in the z-axis 34 relative to position along the y-axis 32 .
- the magnetic flux curves 56 , 58 can be characterized as being substantially flat in the vicinity of the Hall element, which is centered at 300 ⁇ m. Therefore, the output of the Hall effect element 18 , which is sensitive to magnetic fields in the direction of the z-axis 34 , is relatively insensitive to the position of the Hall effect element 18 along the x-axis 30 and along the y-axis 32 .
- An illustrative Hall effect element 18 has dimensions along the x-axis 30 and along the y-axis 32 on the order of 200 microns and therefore the Hall effect element 18 lies in a region between 200 microns and 400 microns on the abscissa 52 .
- a change of position of the Hall effect element 18 by 50 microns either along the x-axis 30 or along the y-axis 32 results in little change in the magnetic field sensed by the Hall effect element. Therefore, the position of the Hall effect element in the x-axis 30 and the y-axis 32 can vary with manufacturing position tolerances without substantial effect upon the sensitivity of the current sensor 10 ( FIG. 1 ).
- the width w 1 ( FIG. 1 ) of the current conductor portion 14 in the x-direction 30 relative to the dimension of the Hall effect element 18 in the x-direction 30 significantly affects the uniformity of the flux density in the z-direction 34 with position along the Hall effect element 18 in the x-direction 30 .
- the longer the current conductor portion 14 i.e., the greater the width w 1 , FIG. 1
- the longer the curve 56 remains substantially flat.
- the width w 1 ( FIG. 1 ) is selected in accordance with a variety of factors, including, but not limited to a desired sensitivity of the current sensor 10 ( FIG. 1 ), and a desired reduction of performance variation resulting from manufacturing variation in relative position of the current path 14 and the Hall effect element 18 .
- selecting the width w 1 to be comparable to a width of the Hall effect element 18 provides the greatest sensitivity of the current sensor 10 .
- selecting the width w 1 to be greater than the width of the Hall effect element 18 provides the smallest performance variation resulting from manufacturing tolerance of Hall element positional placement in the x-direction 30 .
- another exemplary current sensor 70 in accordance with the present invention includes a lead frame 72 having a plurality of leads 72 a - 72 h and a current conductor portion 74 having a width w 2 .
- the current sensor also includes a substrate 76 having a first surface 76 a and a second, opposing surface 76 b .
- the substrate 76 has first and second Hall effect elements 78 a , 78 b diffused into the first surface 76 a , or otherwise disposed on or supported by the first surface 76 a .
- the substrate 76 is disposed on the lead frame 72 so that the Hall effect element 78 is in close proximity to the current conductor portion 74 .
- the substrate 76 has an orientation that is upside down (i.e., the first surface 76 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package.
- An insulator (not shown) can separate the substrate 76 from the lead frame 72 .
- the insulator can be the same as or similar to the insulator 24 shown in FIG. 1 .
- both of the Hall effect elements 78 a , 78 b are disposed in close proximity to the current conductor portion 74 and at predetermined positions relative to the current conductor portion 74 such that a magnetic field generated by an electrical current passing though the current conductor portion 74 in a direction shown by arrows 86 , is in a direction substantially aligned with a maximum response axis of the Hall effect elements 78 a , 78 b .
- the Hall effect elements 78 a , 78 b each have a maximum response axis aligned with a z-axis 94 .
- the Hall effect elements 78 a , 78 b are disposed on opposite sides (i.e., slightly offset along a y-axis 92 ) of the current conductor portion 74 , as shown, where the magnetic field is pointed along the z-axis 94 .
- the Hall effect elements 78 a , 78 b are offset (along the y-axis 92 ) by substantially equal and opposite amounts about the current conductor portion 74 .
- Hall effect elements or another type of magnetic field sensors, for example magnetoresistance elements, having maximum response axes aligned in another direction, can be disposed at other positions relative to the current conductor portion 74 , for example, on top (in a direction of the z-axis 94 ) of the current conductor portion 74 .
- the magnetic fields experienced by the first and the second Hall effect elements 78 a , 78 b are oriented in opposite directions, each aligned along the z-axis 94 . Therefore, if polarized in the same direction, the outputs of the two Hall effect elements 78 a , 78 b will be opposite in polarity. If the output from one of the Hall effect elements 78 a , 78 b is inverted, for example with an inverting amplifier, and then summed, i.e., differentially summed, with the output of the other of the Hall effect elements 78 a , 78 b , certain advantages are achieved.
- the outputs of two Hall effect elements 78 a , 78 b when differentially summed as described above, provide a voltage output of twice the magnitude of the voltage output from a single Hall effect element in the presence of the same current. Therefore, the current sensor 70 has twice the sensitivity of the current sensor 10 of FIG. 1 .
- the current sensor 70 is relatively insensitive to variation in the position of the Hall effect elements 78 a , 78 b in the direction of the y-axis 92 . This is because, when moved in the direction of the y-axis 92 , the voltage output from one of the Hall effect elements 78 a , 78 b tends to increase while the voltage output from the other of the Hall effect elements 78 a , 78 b tends to decrease. Therefore, the differential sum of the two outputs remains relatively invariant.
- lead frame 72 is shown to have the flat leads 72 a - 72 h suitable for surface mounting to a circuit board, it will be appreciated that a lead frame having bent leads, like the lead frame 12 of FIG. 1 , can also be used. Also, while two Hall effect elements 78 a , 78 b are shown, more than two or fewer than two Hall effect elements can also be used.
- a summing circuit 100 suitable for performing the differential signal summation described in conjunction with FIG. 3 is shown coupled to two Hall effect elements 102 a , 102 b .
- the Hall effect elements 102 a , 102 b can be the same as or similar to the Hall effect elements 78 a , 78 b of FIG. 3 .
- each of the Hall effect elements 102 a , 102 b is rotated relative to the other Hall effect element by 90 degrees, as indicated by vectors on the Hall effect elements 102 a , 102 b .
- the Hall effect elements 102 a , 102 b in response to opposite magnetic fields 112 a , 112 b the Hall effect elements 102 a , 102 b generate output voltages 103 a , 103 b having the same polarities.
- the output voltage 103 a is coupled to amplifier 104 a arranged in a non-inverting configuration and the output voltage 103 b is coupled to the amplifier 104 b arranged in an inverting configuration. Therefore, the amplifier output voltages 106 a , 106 b move in opposite voltage directions in response to the magnetic fields 112 a , 112 b .
- the amplifier output voltages 106 a , 106 b are differentially coupled to an amplifier 108 to generate a differential summation, or a difference of the output voltages 106 a , 106 b . Therefore, the output voltages 106 a , 106 b differentially sum to provide a greater output voltage 110 at the output of amplifier 108 .
- the summing circuit 100 can be used in the current sensor 70 of FIG. 3 , in which case Hall effect elements 102 a , 102 b correspond to the Hall effect elements 78 a , 78 b .
- the summing circuit 100 is diffused into, or otherwise disposed upon, the first surface 76 a of the substrate 76 .
- the summing circuit 100 is diffused into, or otherwise disposed upon, the second surface 76 b of the substrate 76 , while the Hall effect elements 78 a , 78 b remain on the first surface 76 a , coupled to the other circuit components though vias or the like.
- another exemplary current sensor 120 includes a substrate 126 having a first surface 126 a and a second, opposing surface 126 b .
- four Hall effect elements 128 a - 128 d are diffused into or otherwise disposed on the first surface 126 a of the substrate 126 .
- the substrate 126 is positioned relative to the lead frame 12 such that first and second Hall effect element 128 a , 128 b respectively are on one side of the current conductor portion 14 along a y-axis 142 , and third and fourth Hall effect elements 128 c , 128 d are on the opposite side of the current conductor portion 14 along the y-axis 42 , as shown.
- the Hall effect elements 128 a , 128 b are offset (along the y-axis 142 ) from the current conductor portion 14 by an amount equal to and opposite from the amount that the Hall effect elements 128 c , 128 d are offset (along the y-axis 142 ) from the current conductor portion 14 .
- the Hall effect elements 128 a - 128 d are disposed in close proximity to the current conductor portion 14 and at predetermined positions relative to the conductor portion 14 , such that a magnetic field generated by an electrical current passing though the current conductor portion 14 in a direction shown by arrows 86 , is in a direction substantially aligned with a maximum response axis of the Hall effect elements 128 a - 128 d .
- each of the Hall effect elements 128 a - 128 d has a maximum response axis aligned with a z-axis 144 .
- the Hall effect elements 128 a , 128 b are disposed on an opposite side (i.e., slightly offset along a y-axis 142 ) of the current conductor portion 144 than the Hall effect elements 128 c , 128 d , as shown, where the magnetic field is pointed along the z-axis 144 .
- Hall effect elements, or another type of magnetic field sensors, for example magnetoresistance elements, having maximum response axes aligned in another direction can be disposed at other positions relative to the current conductor portion 14 , for example, on top (in a direction of the z-axis 144 ) of the current conductor portion 14 .
- first and second Hall effect elements 128 a , 128 b are exposed to a magnetic field in a direction along the z-axis 144 and the third and forth Hall effect elements 128 c , 128 d are exposed to a magnetic field in the opposite direction along the z-axis 144 .
- the four Hall effect elements 128 a - 128 d can be coupled to an electronic circuit arranged as a summing circuit, understood by one of ordinary skill in the art, in order to achieve certain advantages.
- the summing circuit can include two of the summing circuits 100 of FIG. 4 .
- the summing circuit can couple a first two of the Hall effect elements 128 a - 128 d with a first summing circuit, such as the summing circuit 100 of FIG. 4 , and a second two of the Hall effect elements 128 a - 128 d with a second summing circuit, such as the summing circuit 100 .
- an output of the first summing circuit can be summed with an output of the second summing circuit.
- the four Hall effect elements 128 a - 128 d coupled to a summing circuit as described, in the presence of the current, provide a voltage output four times the magnitude of a voltage output from a single Hall effect element, for example the Hall effect element 18 of FIG. 1 , in the presence of the same current. Therefore, the current sensor 120 has four times the sensitivity of the current sensor 10 of FIG. 1 .
- the current sensor 120 is relatively insensitive to variation in the position of the Hall effect elements 128 a - 128 d in the direction of the y-axis 142 . This is because, when moved in the direction of the y-axis 142 , the voltage output from two of the four Hall effect elements 128 a - 128 d tends to increase while the voltage output from the other two of the four Hall effect elements 128 a - 128 d tends to decrease. Therefore, when coupled as a summing circuit, the circuit output is relatively invariant to the y-axis position of the Hall effect elements.
- an exemplary current sensor 150 in accordance with the present invention includes a lead frame 152 having a plurality of leads 152 a - 152 h and a current conductor portion 154 .
- the current sensor 150 also includes a substrate 166 having a first surface 166 a and a second, opposing surface 166 b .
- the substrate 166 has a Hall effect element 158 diffused into the first surface 166 a , or otherwise disposed on the first surface 166 a .
- the substrate 166 is disposed on the lead frame 152 so that the Hall effect element 158 is in close proximity to the current conductor portion 154 .
- the substrate 166 has an orientation that is upside down (i.e., the first surface 166 a is directed downward) in relation to the conventional orientation with which a substrate is mounted into an integrated circuit package.
- the substrate 166 is a flip-chip having solder balls 160 a - 160 c on the first surface 166 a of the substrate 166 .
- the solder balls 160 a - 160 c couple directly to the leads 152 e - 152 h as shown.
- An insulator 164 separates the substrate 166 from the lead frame 152 .
- the insulator 164 can be the same as or similar to the insulator 24 shown in FIG. 1 .
- the Hall effect element 158 is disposed in close proximity to the current conductor portion 154 and at a predetermined position relative to the conductor portion 154 , such that a magnetic field generated by an electrical current passing though the current conductor portion 154 in a direction shown by arrows 168 , is in a direction substantially aligned with a maximum response axis of the Hall effect element 158 .
- the Hall effect element 158 has a maximum response axis aligned with a z-axis 174 .
- the Hall effect element 158 is disposed just to the side (i.e., slight offset along a y-axis 172 ) of the current conductor portion 14 , as shown, where the magnetic field is pointed along the z-axis 174 .
- a Hall effect element, or another type of magnetic field sensor for example a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to the current conductor portion 154 , for example, on top (in a direction of the z-axis 174 ) of the current conductor portion 154 .
- Operation of the current sensor 150 is like the above-described operation of the current sensor 10 of FIG. 1 .
- the Hall effect element 158 being is close proximity to the current conductor portion 154 , results in a greater output voltage from the Hall effect element 158 , and therefore an improved sensitivity.
- Hall effect element 158 is shown on the first surface 166 a of the substrate 166 , it will be appreciated that more than one Hall effect element can be used with this invention.
- Other circuitry for example an amplifier, can also be diffused in or otherwise coupled to or supported by the first and/or second surfaces 166 a , 166 b of the substrate 166 .
- solder balls 160 a - 160 c any number of solder balls can be provided, including dummy solder balls for stabilizing the substrate 166 .
- solder balls 160 a - 160 c other connection methods can also be used, including, but not limited to gold bumps, eutectic or high lead solder bumps, no-lead solder bumps, gold stud bumps, polymeric conductive bumps, anisotropic conductive paste, or conductive film.
- an exemplary current sensor 180 in accordance with the present invention includes a flux concentrator 182 and a flux concentrating layer 184 .
- the flux concentrator is located proximate the Hall effect sensor 158 , adjacent to and below the first surface 166 a of the substrate 166 .
- the flux concentrating layer 184 is disposed on (or adjacent to and above) the second surface 166 b of the substrate 166 .
- the flux concentrator 182 and the flux concentrating layer 184 each tend to concentrate the magnetic flux generated by the current passing through the current conductor portion 154 so as to cause the current sensor 180 to have a higher sensitivity than the current sensor 150 of FIG. 6 .
- the flux concentrator 182 and the flux concentrating layer 184 can each be comprised of a variety of materials, including but not limited to, ferrite, Permalloy, and iron.
- An adhesion layer (not shown), for example, a titanium or chromium layer, may be present and would be understood by one skilled in the art.
- the flux concentrator 182 is shown having a cubic shape, in other embodiments, the flux concentrator can have another shape, for example, a polyhedral shape, an elliptical shape, or a spherical shape. While both the flux concentrator 182 and the flux concentrating layer 184 are shown, in other embodiments, only one of the flux concentrator 182 and the flux concentrating layer 184 can be provided. Also, while the flux concentrator 182 and the flux concentrating layer 184 are shown in conjunction with one magnetic field transducer 158 , it should be appreciated that the flux concentrator 182 and the flux concentrating layer 184 can also be applied to configurations having more than the one magnetic field transducer 158 , for example, the configurations shown in FIGS. 1, 3 , and 5 .
- another exemplary current sensor 200 in accordance with the present invention includes a lead frame 202 having a plurality of leads 202 a - 202 h .
- the current sensor 200 also includes a substrate 206 having a first surface 206 a and a second, opposing surface 206 b .
- the substrate 206 has a Hall effect element 208 diffused into the first surface 206 a , or otherwise disposed on the first surface 206 a .
- a conductive clip 204 having a current conductor portion 204 a is coupled to the leads 202 a - 202 d .
- FIG. 8 Features of the conductive clip 204 are shown in FIG. 8 .
- the conductive clip is formed having a bend such that the conductive clip 204 passes up and over the first surface 206 a of the substrate 206 .
- the substrate 206 is disposed on the lead frame 202 so that the Hall effect element 208 is in close proximity to the current conductor portion 204 a .
- the substrate 206 has a conventional mounting orientation with the first surface 206 a directed upward.
- the substrate 206 has bonding pads 212 a - 212 c on the first surface 206 a , to which bond wires 210 a - 210 c are coupled.
- the bond wires 210 a - 210 c are further coupled to the leads 202 e , 202 f , 202 h .
- An insulator 214 can be provided to isolate the substrate 206 from the conductive clip 204 .
- the insulator 214 can be the same as or similar to the insulator 24 shown in FIG. 1 .
- the Hall effect element 208 is disposed in close proximity to the current conductor portion 204 a , which passes up and over the first surface 206 a of the substrate 206 .
- the Hall effect element 208 is disposed at a predetermined position relative to the conductor portion 204 a such that a magnetic field generated by an electrical current passing though the current conductor portion 204 a in a direction shown by arrows 216 , is in a direction substantially aligned with a maximum response axis of the Hall effect element 208 .
- the Hall effect element 208 has a maximum response axis aligned with a z-axis 224 .
- the Hall effect element 208 is disposed just to the side (i.e., slight offset along a y-axis 222 ) of the current conductor portion 204 a , as shown, where the magnetic field is pointed along the z-axis 224 .
- a Hall effect element, or another type of magnetic field sensor for example a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to the current conductor portion 204 a , for example, essentially aligned above or below (in a direction of the z-axis 224 ) with the current conductor portion 204 a.
- the Hall effect element 208 is in very close proximity to the current conductor portion 204 a and at a predetermined position relative to the current conductor portion 204 a in which the magnetic field generated by the current is substantially aligned with the maximum response axis of the Hall effect element 208 . This position results in a greater voltage output from the Hall effect element 208 , and therefore improved sensitivity.
- Hall effect element 208 is shown on the second surface 206 b of the substrate 206 , it will be appreciated that more than one Hall effect element can be used. In particular, an embodiment having two Hall effect elements can be similar to the current sensor 70 of FIG. 3 and an embodiment having four Hall effect elements can be similar to the current sensor 120 of FIG. 5 . Also, additional circuitry, for example an amplifier, can be diffused in or otherwise coupled to the first and/or second surfaces 206 a , 206 b of the substrate 206 .
- the conductive clip 204 can be formed in a variety of ways and from a variety of materials.
- the conductive clip 204 is stamped, for example, from a copper-sheet.
- the conductive clip 204 is formed from foil, for example copper foil.
- the conductive clip 204 is formed by an etching process. The conductive clip 204 allows the use of the conventional mounting orientation of the substrate 206 while bringing the current conductor portion 204 a very close to the Hall effect element 208 .
- the conductive clip 204 can be provided having a thickness selected in accordance with an amount of current that will pass through the conductive clip 204 . Therefore, if a current sensor adapted to sense relatively high currents is desired, the conductive clip can be relatively thick, whereas, if a current sensor adapted to sense relatively low currents is desired, the conductive clip 204 can be relatively thin. In another embodiment, if a current sensor adapted to sense relatively high currents is desired, more than one conductive clip 204 can be stacked in contact with other conductive clips to provide an increased effective thickness that is thicker than any one conductive clip 204 , and therefore, able to carry more current.
- the close proximity between the Hall effect element 208 and the current conductor portion 204 a is achieved by providing the Hall effect element 208 on the first substrate surface 206 a , which is positioned closer to the current conductor portion 204 a than the second surface 206 b .
- this advantageous close proximity is achieved by providing the Hall effect element 208 on the second substrate surface 206 b and forming the current conductor portion 204 a so as to be in substantial alignment with the second surface 206 b.
- the conductive clip 204 is shown before it is coupled to the leads 202 a - 202 d .
- the conductive clip 204 includes the current conductor portion 204 a , a transition region 204 b , a bend region 204 c , and a bonding region 204 d .
- the bonding region 204 d includes two portions 204 e , 204 f which couple to the leads 202 a - 202 d .
- the transition region 204 b can be elevated relative to the current conductor portion 204 a to avoid contact with the substrate 206 .
- Hall effect elements have been shown and described in association with embodiments of this invention, it will be recognized that other types of magnetic field sensors can be used.
- magnetoresistance elements can be used in place of the Hall effect elements.
- a conventional magnetoresistance element has a maximum response axis that is perpendicular to the maximum response axis of a conventional Hall effect element.
- One of ordinary skill in the art will understand how to position one or more magnetoresistance elements relative to a current conductor portion in accordance with embodiments of the present invention to achieve the same results as the Hall effect element embodiments herein described.
- a lead frame 250 is shown having a shape similar to the lead frame 72 of FIG. 3 and the lead frame 152 of FIG. 6 .
- the lead frame 250 has a plurality of thinned portions 252 a - 252 n that are thinner than other portions of the lead frame 250 .
- the thinner portions can be provided by a variety of processes, including, but not limited to, chemical etching and stamping.
- a current conductor portion 254 has a surface 254 a and a thickness t 1 which can be the same as or similar to the thickness of others of the thinned portion 252 b - 252 n .
- Other portions of the lead frame have a thickness t 2 .
- the thickness t 1 of the current carrying portion 254 is the same as the thickness of the other thinned portions 252 b - 252 n , and the thickness t 1 is approximately half of the thickness t 2 .
- the current conductor portion 254 has a cross section that is essentially rectangular, having the thickness t 1 .
- the current conductor portion 254 in the presence of a current passing through the current conductor portion 254 , the current conductor portion 254 being thinner, for example, than the current conductor portion 74 of FIG. 3 , has a higher current density near the surface 254 a than the current conductor portion 74 of FIG. 3 has near the surface 74 a in the presence of a similar current.
- the current is compressed to be closer to the surface 254 a than it would otherwise be with a thicker current conductor portion.
- a magnetic field generated by the current has a higher flux density in proximity to the surface 254 a.
- the Hall effect elements 78 a , 78 b experience a greater magnetic field, resulting in a more sensitive current sensor.
- the thinned portion 252 b - 252 n provide other advantages. For example, when the lead frame 250 is molded into a plastic surrounding body, the other thinned portions 252 b - 252 n tend to lock the lead frame 250 more rigidly into the molded body.
- the thickness t 1 is selected in accordance with a variety of factors, including, but not limited to, a maximum current to be passed through the current conductor portion 254 .
- an alternate current conductor portion 270 suitable for replacing the current conductor portion 254 of FIG. 9 , has a T-shaped cross section as would be seen from a cross-section taken along line 9 A- 9 A of FIG. 9 .
- the T-shape has a surface 270 a , a first thickness t 3 , and a second thickness t 4 .
- the thickness t 3 can be the same as or similar to the thickness t 1 of FIG. 9
- the thickness t 4 can be the same as or similar to the thickness t 2 of FIG. 9 . In one particular embodiment the thickness t 3 is approximately half of the thickness t 4 .
- a magnetic field generated in response to a current passing through the current conductor portion 270 is higher in proximity to the surface 270 a than it would be if the current conductor portion 270 had a uniform thickness t 4 .
- another exemplary current sensor 300 in accordance with the present invention includes a lead frame 302 (also referred to herein as a lead frame portion) having a plurality of leads 302 a - 302 h and a current conductor portion 304 provided as a combination of a first current conductor portion 304 a and a second current conductor portion 304 b .
- the current sensor 300 also includes a substrate 306 having a first surface 306 a and a second, opposing, surface 306 b .
- the substrate 306 has a Hall effect element 308 diffused into the first surface 306 a , or otherwise disposed on or supported by the first surface 306 a .
- the substrate 306 is disposed on the lead frame 302 so that the Hall effect element 308 is in close proximity to the current conductor portion 304 .
- the substrate 306 has an orientation that is upside down (i.e., the first surface 306 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package.
- the substrate 306 is a flip-chip having solder balls 320 a - 320 e on the first surface 306 a of the substrate 306 .
- the solder balls 320 a - 320 e couple directly to the leads 302 e - 302 h .
- An insulating layer 330 can separate the substrate 306 from the lead frame 302 .
- the insulating layer 330 can be the same as or similar to the insulator 24 shown in FIG. 1 .
- the second current conductor portion 304 b is deposited directly on the first surface 306 a of the substrate 306 and no insulating layer 330 is used.
- the second current conductor portion 304 b can be deposited by any conventional integrated circuit deposition technique, including, but not limited to, sputtering and electroplating.
- the second current conductor portion 304 b is a conductive structure separate from but proximate to the first surface 306 a of the substrate 306 , and the insulating layer 330 is disposed between the second current conductor portion 304 b and the first surface 306 a of the substrate 306 .
- Hall effect element 308 the insulating layer 330 , the second current conductor portion 304 b , and the first current conductor portion are under the substrate 306 as shown.
- the Hall effect element 308 is disposed in close proximity to the current conductor portion 304 and at a predetermined position relative to the current conductor portion 304 such that a magnetic field generated by an electrical current 316 passing though the current conductor portion 304 is in a direction substantially aligned with a maximum response axis of the Hall effect element 308 .
- the Hall effect element 308 has a maximum response axis aligned with a z-axis 326 . Therefore, the Hall effect element 308 is disposed to a side (i.e., slightly offset along a y-axis 324 ) of the current conductor portion 304 , as shown, where the magnetic field is pointed along the z-axis 326 .
- a Hall effect element or another type of magnetic field sensor, for example, a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to the current conductor portion 304 , for example, on top (in a direction of the z-axis 326 ) of the current conductor portion 304 .
- the insulating layer 330 can be an interposing insulating layer or a substrate insulating layer associated with the substrate 306 . In some embodiments for which the insulating layer 330 is an interposing insulating layer, the insulating layer 330 is a ceramic interposing insulating layer.
- the insulating layer 330 is a substrate insulating layer associated with the substrate 306
- the insulating layer 330 is a substrate taped insulating layer formed with a taping process.
- the substrate taped insulating layer can be comprised of a tape applied to the substrate, including but not limited to, a polymer tape, for example a Kapton® tape.
- the insulating layer 330 is a substrate deposited insulating layer formed with a deposition process.
- the deposition process used to form the insulating layer 330 can include a variety of processes, including, but not limited to, a screen printing process, a spin depositing process, a sputtering process, a plasma enhanced chemical vapor deposition (PECVD) process, and a low-pressure chemical vapor deposition (LPCVD) process.
- the screen printing process can result in a substrate insulating layer comprised of a variety materials, including but not limited to, polymer or ceramic materials.
- the spin depositing process can result in a substrate insulting layer comprised of a variety materials, including but not limited to a polymer, for example, polyimide (e.g., trade name Pyralin®) or bisbenzocyclobutene (BCB) (e.g., trade name Cyclotene®).
- the sputtering process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide.
- the PECVD process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide.
- the LPCVD process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide.
- the insulating layer 330 is a substrate insulating layer associated with the substrate 306
- the insulating layer 330 is a substrate oxide insulating layer formed with an oxide generation process.
- the substrate oxide insulating layer can be comprised, for example, of a silicon dioxide.
- the current 316 flows into the leads 302 c , 302 d , which are coupled in parallel, through the current conductor portion 304 , and out of the leads 302 a , 302 b , which are also coupled in parallel.
- the current flowing though the current conductor portion 304 generates a magnetic field, which is sensed by the Hall effect element 308 .
- the Hall effect element 308 is in very close proximity to the current conductor portion 304 and at a predetermined position relative to the current conductor portion 304 at which the magnetic field generated by the current is substantially aligned with the maximum response axis of the Hall effect element 308 . This placement results in a greater voltage output from the Hall effect element 308 , and therefore greater sensitivity.
- lead frame 302 is shown to have the bent leads 302 a - 302 h suitable for surface mounting to a circuit board, it will be appreciated that a lead frame having leads with other shapes can also be used, including but not limited to, through hole leads having a straight shape.
- Hall effect element 308 is shown on the first surface 306 a of the substrate 306 , it will be appreciated that more than one Hall effect element can be used with this invention.
- Other circuitry for example an amplifier, can also be diffused in or otherwise coupled to or supported by the first and/or second surfaces 306 a , 306 b of the substrate 306 .
- solder balls 320 a - 320 e any number of solder balls can be provided, including dummy solder balls for stabilizing the substrate 306 .
- solder balls 320 a - 320 e other connection methods can also be used, including, but not limited to gold bumps, eutectic or high lead solder bumps, no-lead solder bumps, gold stud bumps, polymeric conductive bumps, anisotropic conductive paste, conductive film, or wire bonds.
- the substrate 306 can be conventionally mounted such that the first surface 306 a is above the second surface 306 b when the integrated circuit 300 is mounted to an uppermost surface of a circuit board.
- the first and second current conductor portions 304 a , 304 b are each above the first surface 306 a of the substrate 306 .
- a current sensor 350 differs from the current sensor 300 of FIG. 10 by providing a current conductor portion 354 different than the current conductor portion 304 of FIG. 10 .
- the current conductor portion 354 includes a first current conductor portion 354 a and the second current conductor portion 304 b .
- a lead frame 352 having the first current conductor portion 354 a does not form a continuous current path, unlike the lead frame 302 having the first current conductor portion 304 a of FIG. 10 .
- the substrate 306 can be conventionally mounted such that the first surface 306 a is above the second surface 306 b when the integrated circuit 300 is mounted to an uppermost surface of a circuit board.
- the first and second current conductor portions 354 a , 304 b are each above the first surface 306 a of the substrate 306 .
- a current sensor 400 differs from the current sensor 300 of FIG. 10 by providing a current conductor portion 304 having only the current conductor portion 304 a (i.e., there is no current conductor portion 304 b , FIG. 10 ).
- the lead frame 302 having the first current conductor portion 304 a forms a continuous current path. With this arrangement, it will be appreciated that all of the current 316 passes through the current conductor portion 304 a.
- An insulating layer 402 is disposed between the current conductor portion 304 a and the first surface 306 a of the substrate 306 .
- the insulating layer 402 is an interposing insulating layer, for example a ceramic layer as described above in conjunction with FIG. 10 .
- the insulating layer 402 is a substrate insulating layer associated with the substrate.
- the insulating layer 402 is a lead frame insulating layer associated with the lead frame 302 . It will be appreciated that, when associated with the lead frame, the insulating layer 402 can extend beyond the substrate 306 in a direction along the y-axis 324 . This arrangement provides enhanced reliability, since an edge of the substrate 306 is less likely to contact the lead frame 302 .
- Interposing insulating layers and substrate insulating layers are described above, in conjunction with FIG. 10 .
- the insulating layer 402 is a lead frame insulating layer associated with the lead frame 302
- the insulating layer 402 is a lead frame taped insulating layer formed with a taping process.
- the lead frame taped insulating layer can be comprised of a tape applied to the lead frame, including but not limited to, a polymer tape, for example, a Kapton® tape.
- the insulating layer 402 is a lead frame sprayed insulating layer formed with a spraying process.
- the lead frame sprayed insulting layer can be comprised of a variety of materials, including but not limited to a polymer, for example, a polyimide (e.g., trade name Pyralin®), a bisbenzocyclobutene (BCB) (e.g., trade name Cyclotene®) a sprayed dielectric, (e.g., trade names 3M Scotch® Insulating Spray 1601 and Loctite® ShadowCure® 3900), or a spray ceramic coating.
- a polyimide e.g., trade name Pyralin®
- BCB bisbenzocyclobutene
- Cyclotene® a sprayed dielectric
- trade names 3M Scotch® Insulating Spray 1601 and Loctite® ShadowCure® 3900 or a spray ceramic coating.
- the insulating layer 402 is a lead frame deposited insulating layer formed with a deposition process.
- the lead frame deposited insulating layer can be formed with a variety of processes, including, but not limited to a screen printing process.
- the screen printing process can result in a lead frame deposited insulting layer comprised of a variety of materials, including but not limited to, polymers or ceramics.
- the lead frame deposited insulating layer is formed with a vacuum deposition process.
- the lead frame deposited insulating layer can be comprised, for example, of a polymer, for example, parylene.
- the insulating layer 402 is a lead frame oxide insulating layer formed with an oxide generation process.
- the lead frame oxide insulating layer can be comprised, for example, of a sputtered oxide layer disposed onto the lead frame 302 .
- another exemplary current sensor 450 includes a lead frame 452 (also referred to herein as a lead frame portion) having a plurality of leads 452 a - 452 h and a current conductor portion 454 .
- the lead frame 452 can be similar to the lead frame 302 of FIG. 12 .
- the current sensor 450 also includes a substrate 456 having a first surface 456 a and a second, opposing, surface 456 b .
- the substrate 456 has a Hall effect element 458 diffused into the first surface 456 a , or otherwise disposed on or supported by the first surface 456 a .
- the substrate 456 is disposed on the lead frame 452 so that the Hall effect element 458 is in close proximity to the current conductor portion 454 .
- the substrate 456 has an orientation that is upside down (i.e., the first surface 456 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package.
- the substrate 456 is arranged as a flip-chip having solder balls 460 a - 460 e on the first surface 456 a of the substrate 456 .
- the solder balls 460 a - 460 e couple directly to the leads 452 e - 452 h .
- An insulating layer 470 can separate the substrate 456 from the lead frame 452 .
- the insulating layer 470 can be the same as or similar to the insulator 24 shown in FIG. 1 .
- the insulating layer 470 can cover a substantial portion of the surface 456 a .
- the insulating layer has regions 470 a , 470 b , which are devoid of insulating material, as will become more apparent from the discussion of FIG. 13A below.
- the current conductor portion 454 has two features 454 a , 454 b (also referred to herein as bumps), which extend upward from the current conductor portion 454 in a direction of a z-axis 476 .
- the bumps 454 a , 454 b have a size and a shape selected to provide electrical contact between the current conductor portion 454 and the first surface 456 a of the substrate 456 .
- the two bumps 454 a , 454 b provide electrical contact to metalized features (not shown) upon the first surface 456 a of the substrate 456 , providing an electrical coupling to circuits (not shown) also disposed on the first surface 456 a of the substrate 456 .
- the electrical coupling and the circuits coupled thereto are discussed below in greater detail in conjunction with FIG. 15 .
- the lead frame 452 having the first current conductor portion 454 forms a continuous current path.
- a current 466 passes through the current conductor portion 454 , while some small amount of the current 466 flows into the above-mentioned circuits on the substrate 456 via the bumps 454 a and 454 b .
- the above-mentioned circuits can be designed to draw an insignificant amount of the current 466 . Therefore, nearly all of the current 466 passes through the current conductor portion 454 .
- the insulating layer 470 is an interposing insulating layer, for example a ceramic layer. In other embodiments, the insulating layer 470 is a substrate insulating layer associated with the substrate. In other embodiments, the insulating layer 470 is a lead frame insulating layer associated with the lead frame 452 .
- Interposing insulating layers, substrate insulating layers, and lead frame insulating layers are described above in conjunction with FIG. 10 .
- the bumps 454 a , 454 b can provide a connection, which couples the current conductor portion 454 to circuitry adapted to detect an overcurrent condition, i.e., adapted to detect a current passing through the current conductor portion 452 a , which is greater than a predetermined current level or current threshold.
- the circuitry can detect a voltage difference between the first bump 454 a and the second bump 454 b , which is larger than a predetermined voltage drop or voltage threshold.
- the second current conductor portion can be the same as or similar to the second current conductor portion 304 b of FIG. 10 , and can be is similarly disposed upon the first surface 456 a of the substrate 456 or upon the insulator 470 .
- the current conductor portion 454 includes the bump 454 a , which couples the current conductor portion 454 through the region 470 a of the insulating layer 470 to the first surface 456 a of the substrate 456 .
- the Hall effect element 458 is disposed in or on the first surface 456 a of the substrate 456 .
- Other circuitry 480 electrically coupled to the bump 454 a , can also be disposed in or on the first surface 456 a of the substrate 456 . Exemplary circuitry 480 is described below in conjunction with FIG. 15 .
- a wire bond 478 or the like can be used to couple the current conductor portion 454 through the region 470 a of the insulating layer 470 to the first surface 456 a of the substrate 456 .
- a second wire bond (not shown) can be used in place of the other bump 454 b of FIG. 13 . While the wire bond 478 appears to terminate to the substrate 456 directly above the current conductor portion 454 , it will be appreciated that the termination can be to the side of the current conductor portion 454 .
- another exemplary current sensor 500 includes a lead frame 502 having a plurality of leads 502 a - 502 h . Only leads 502 c and 502 d shown for clarity, however, it will be understood that other ones of the leads 502 a - 502 h are arranged in a conventional lead arrangement.
- the current sensor 500 also includes a substrate 506 having a first surface 506 a and a second, opposing, surface 506 b .
- the substrate 506 has a Hall effect element 508 diffused into the first surface 506 a , or otherwise disposed on the first surface 506 a .
- a conductive clip 503 having a current conductor portion 504 is coupled to the leads 502 a - 502 d .
- the current conductor portion 504 includes two bumps 504 a , 504 b.
- the conductive clip 503 is formed having a bend such that the conductive clip 503 passes up and over the first surface 506 a of the substrate 506 .
- the substrate 506 is disposed on the lead frame 502 so that the Hall effect element 508 is in close proximity to the current conductor portion 504 .
- the substrate 506 has a conventional mounting orientation with the first surface 506 a directed upward.
- An insulator 514 (also referred to herein as an insulating layer) can insulate the substrate 506 from the conductive clip 503 .
- the insulator 514 has two regions 514 a , 514 b devoid of any insulating material.
- the insulator 514 can be similar to the insulator 24 shown in FIG. 1 .
- the bumps 504 a , 504 b align with and extend into the regions 514 a , 514 b of the insulating layer 514 , which are devoid of insulating material.
- the bumps 504 a , 504 b have a size and a shape selected to provide electrical contact between the current conductor portion 504 and the first surface 506 a of the substrate 506 .
- the two bumps 504 a , 504 b provide electrical contact to metalized features (not shown) upon the first surface 506 a of the substrate 506 , providing electrical coupling to circuits (not shown) also disposed on the first surface 506 a of the substrate 506 .
- the electrical coupling and the circuits coupled thereto are discussed below in greater detail in conjunction with FIG. 15 .
- the second current conductor portion can be the same as or similar to the second current conductor portion 304 b of FIG. 10 , and can be similarly disposed upon the first surface 506 a of the substrate 506 or upon the insulator 514 .
- the current conductor portion 504 includes the bump 504 a , which couples the current conductor portion 504 through the region 514 a of the insulating layer 514 to the substrate 506 .
- the Hall effect element 508 is disposed in or on the surface 506 a of the substrate 506 .
- Other circuitry 530 electrically coupled to the bump 504 a can also be disposed in or on the surface 506 a of the substrate 506 . Exemplary circuitry 530 is described below in conjunction with FIG. 15 .
- a wire bond 532 or the like can be used to couple the current conductor portion 504 through the region 514 a of the insulating layer 514 to the first surface 506 a of the substrate 506 .
- a second wire bond (not shown) can be used in place of the other bump 504 b of FIG. 14 . While the wire bond 532 appears to terminate to the substrate 506 under the current conductor portion 506 , it will be appreciated that the termination can be to the side of the current conductor portion 506 .
- exemplary circuitry 550 can be the same as or similar to the circuitry 480 used in the current sensor 450 of FIG. 13A or the circuitry 530 used in the current sensor 500 of FIG. 14A .
- the circuitry 550 can be coupled to a Hall effect element 552 .
- the Hall effect element 552 can be the same as or similar to the Hall effect element 458 of FIGS. 13 and 13 A, or the Hall effect element 508 of FIGS. 14 and 14 A.
- the Hall effect element 552 is coupled to a current sensing circuit 554 , which includes a dynamic offset cancellation circuit 553 .
- the dynamic offset cancellation circuit 553 provides a DC offset adjustment for DC voltage errors associated with the Hall effect element 552 .
- the dynamic offset cancellation circuit 553 is coupled to an amplifier 556 that amplifies the offset adjusted Hall output signal.
- the amplifier 556 is coupled to a filter 558 that can be a low pass filter, a high pass filter, a band pass filter, and/or a notch filter.
- the filter 558 is selected in accordance with a variety of factors including, but not limited to, a desired response time, and a frequency spectrum of noise associated with the Hall effect element 552 , the dynamic offset cancellation circuit 553 , and the amplifier 556 .
- the filter 558 is a low pass filter.
- the filter 558 is coupled to an output driver 560 that provides a current sensor output signal 571 at a node 572 for transmission to other electronics (not shown). As described more fully below, the current sensor output signal is indicative of a magnitude of a current passing though a conductor.
- a trim control circuit 564 is coupled to node 570 .
- the node 570 can receive a trim signal that permits various current sensor parameters to be trimmed, typically during manufacture.
- the trim control circuit 564 includes one or more counters enabled by an appropriate signal applied to the node 570 .
- the trim control circuit 564 is coupled to a quiescent output voltage (Qvo) circuit 562 .
- the quiescent output voltage is the voltage of the output signal 571 when the current sensed by the Hall effect element 552 is zero. Nominally, for a unipolar supply voltage, Qvo is equal to Vcc/2. Qvo can be trimmed by applying a suitable trim signal through the node 570 to a first trim control circuit counter within the trim control circuit 564 , which, in turn, controls a digital-to-analog converter (DAC) within the Qvo circuit 562 .
- DAC digital-to-analog converter
- the trim control circuit 564 is further coupled to a sensitivity adjustment circuit 566 .
- the sensitivity adjustment circuit 566 permits adjustment of the gain of the amplifier 556 in order to adjust the sensitivity of the current sensor 550 .
- the sensitivity can be trimmed by applying a suitable trim signal through the node 570 to a second trim control circuit counter within the trim control circuit 564 , which, in turn, controls a DAC within the sensitivity adjustment circuit 566 .
- the trim control circuit 564 is further coupled to a sensitivity temperature compensation circuit 568 .
- the sensitivity temperature compensation circuit 568 permits adjustment of the gain of the amplifier 556 in order to compensate for gain variations due to temperature.
- the sensitivity temperature compensation circuit 568 can be trimmed by applying a suitable trim signal through the node 570 to a third trim control circuit counter within the trim control circuit 564 , which, in turn, controls a DAC within the sensitivity temperature compensation circuit 568 .
- the Hall effect element 552 is placed in proximity to a current conductor portion 604 , here shown to be apart from the Hall effect element 552 for clarity.
- the current conductor portion 604 can be the same as or similar to the current conductor portion 454 of FIGS. 13 and 13 A and the current conductor portion 504 of FIGS. 14 and 14 A, formed by a coupling of integrated circuit leads.
- a current 584 enters a node 574 of the current sensor 550 , passes through the current conductor portion 604 and out a node 576 , where it passes though a switch 580 and through a load 586 , both of which can be external to the integrated circuit 550 .
- the switch 580 can be, for example, a relay or a field effect transistor (FET).
- an overcurrent circuit 590 can detect the overcurrent condition.
- the overcurrent circuit 590 includes a comparator 591 coupled to receive the current sensor output signal 571 and also coupled to a voltage reference 592 .
- An output 593 of the comparator 591 is coupled to a logic gate 594 .
- the logic gate 594 is coupled to a gate driver, which generates a control signal 597 at a node 578 of the circuitry 550 .
- the node 578 is coupled to a control node of the switch 580 and is operable to open the switch 580 , stopping the current 584 , in response to detection of the overcurrent condition by the Hall effect element 552 .
- the logic gate 594 is also coupled to a fault circuit 598 , which generates a fault output signal 599 at a node 588 of the integrated circuit 550 .
- the fault output signal 599 is indicative of the overcurrent condition, i.e., the current 584 being above a predetermined current.
- the amplifier 591 and the voltage reference 592 are responsive to the current sensor output signal 571 , which is responsive to signals generated by the Hall effect element 552 . It will be appreciated that the Hall effect element 552 has a relatively slow response time. Therefore, if the switch 580 were controlled only in the fashion described above in response to signals generated by the Hall effect element 552 , some rapid overcurrent conditions might damage the integrated circuit 550 or the load 586 before the switch 580 could be opened. Circuitry described below can provide a faster response time to the overcurrent condition.
- a comparator 600 and a voltage reference 602 are coupled to the current conductor portion 604 of the integrated circuit 550 .
- the current conductor portion 604 can be the same as or similar to the current conductor portion 454 of FIGS. 13 and 13 A and the current conductor portion 504 of FIGS. 14 and 14 A, formed by a coupling of integrated circuit leads.
- the coupling from the current conductor portion 604 to the voltage reference 602 and to the comparator 600 can be provided in a variety of ways, including but not limited to, the bumps 454 a and 454 b of FIGS. 13 and 13 A and the bumps 504 a , 504 b of FIGS. 14 and 14 A.
- circuitry 550 shown in FIG. 15 is illustrative of exemplary circuitry that may be associated with and integrated into a current sensor, like the current sensor 450 of FIGS. 13 and 13 A and the current sensor 500 of FIGS. 14 and 14 A.
- the switch 580 can be integrated into the current sensor circuitry 550 .
- another exemplary current sensor 650 is like the current sensor of 500 of FIG. 14 , however, the current sensor 650 includes a second substrate 655 described more fully below.
- the current sensor 650 includes a lead frame 652 having a plurality of leads 552 a - 552 h .
- the current sensor 650 also includes a substrate 656 having a first surface 656 a and a second, opposing, surface 656 b .
- a conductive clip 654 having a current conductor portion 655 is coupled to the leads 652 a - 652 d .
- the current conductor portion 605 includes two bumps 655 a , 655 b .
- a second substrate 666 having a magnetic field sensing element disposed thereon, for example, a magnetoresistance element (not shown), can be disposed upon the current conductor portion 655 .
- the magnetic field sensing element on the second substrate 666 can be coupled to the first surface 656 a of the substrate 656 with wire bonds 668 a , 668 b or the like.
- the conductive clip 654 is formed having a bend such that the conductive clip 654 passes up and over the first surface 656 a of the substrate 656 .
- the substrate 656 has a conventional mounting orientation with the first surface 656 a directed upward.
- An insulator 664 (also referred to herein as an insulating layer) can insulate the substrate 656 from the conductive clip 654 .
- the insulator 664 has two regions 664 a , 664 b devoid of any insulating material.
- the insulator 664 can be similar to the insulator 24 shown in FIG. 1 .
- the bumps 655 a , 655 b align with and extend into the regions 664 a , 664 b of the insulating layer 664 , which are devoid of insulating material.
- the bumps 655 a , 655 b have a size and a shape selected to provide electrical contact between the current conductor portion 655 and the first surface 656 a of the substrate 656 .
- the two bumps 655 a , 655 b provide electrical contact to metalized features (not shown) upon the first surface 656 a of the substrate 656 , providing electrical coupling to circuits (not shown) also disposed on the first surface 656 a of the substrate 656 .
- the electrical coupling and the circuits coupled thereto are discussed above in greater detail in conjunction with FIG. 15 .
- the second current conductor portion can be the same as or similar to the second current conductor portion 304 b of FIG. 10 , and can be similarly disposed upon the first surface 656 a of the substrate 656 or upon the insulator 664 .
- the current sensor 650 has two substrate 656 , 666 .
- the current sensor 650 shows but one arrangement that can provide two substrates, while also providing a current carrying conductor, e.g., 655 , in close proximity to a magnetic field sensing element, and/or while including an overcurrent circuit as described above in conjunction with FIG. 15 .
- Other two substrate arrangements are described in U.S. patent application Ser. No. ______, entitled “Arrangements for an Integrated Sensor,” having attorney docket number ALLEG-162PUS, having inventors Michael C. Doogue, Vijay Mangtani, and William P. Taylor, filed on Jan. 20, 2006, which application is incorporated by reference herein in its entirety. Any of the arrangements described therein can be combined with a current carry conductor and/or with an overcurrent circuit.
- the current sensor 450 of FIGS. 13 and 13 A, the current sensor 500 of FIGS. 14 and 14 A, the current sensor 550 of FIG. 15 , and the current sensor 650 of FIG. 16 and are shown having couplings between current conductor portions 454 , 504 , 604 , and 655 , respectively, and associated overcurrent circuitry, which is represented by the circuitry 590 of FIG. 15 .
- other current sensors similar to the current sensors 450 , 500 , 550 , and 650 have no couplings between the current conductor portions 454 , 504 , 604 , and 655 and associated overcurrent circuitry, i.e., no bumps or wire bonds.
- the current conductor portion 604 of FIG. 15 does not couple to the nodes 574 or 576 of FIG. 15 .
- the overcurrent circuitry 590 ( FIG. 15 ), remains coupled to the nodes 574 and 576 , and the nodes 574 and 576 couple to another circuit element apart from the current sensor 550 .
- the nodes 574 , 576 can couple to a circuit trace on a circuit board which carries the same current as that which passes through the current conductor portion 604 ( FIG. 15 ).
- the overcurrent circuit 590 is able to sense a voltage drop resulting from current passing though the circuit trace, providing essentially the same effect, wherein the overcurrent circuit 590 provides similar functions to those described above.
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
- This application is a Continuation-in-Part application of and claims the benefit under 35 U.S.C. §120 of U.S. application Ser. No. 11/144,970 filed on Jun. 3, 2005, which is a Continuation-in-Part application of and claims the benefit under 35 U.S.C. §120 of U.S. application Ser. No. 11/140,250 filed on May 27, 2005, which is a Continuation-in-Part application of and claims the benefit under 35 U.S.C. §120 of U.S. application Ser. No. 10/649,450 filed on Aug. 26, 2003, which applications are incorporated herein by reference in their entirety.
- Not Applicable.
- This invention relates generally to electrical current sensors, and more particularly to a miniaturized current sensor in an integrated circuit package.
- As is known in the art, one type of conventional current sensor uses a magnetic field transducer (for example a Hall effect or magnetoresistive transducer) in proximity to a current conductor. The magnetic field transducer generates an output signal having a magnitude proportional to the magnetic field induced by a current that flows through the current conductor.
- Some typical Hall effect current sensors include a gapped toroid magnetic flux concentrator, with the Hall effect element positioned in the toroid gap. The Hall effect device and toroid are assembled into a housing, which is mountable on a printed circuit board. In use, a separate current conductor, such as a wire, is passed through the center of the toroid. Such devices tend to be undesirably large, both in terms of height and circuit board area.
- Other Hall effect current sensors include a Hall effect element mounted on a dielectric material, for example a circuit board. One such current sensor is described in a European Patent Application No. EP0867725. Still other Hall effect current sensors include a Hall effect element mounted on a substrate, for example a silicon substrate as described in a European Patent Application No. EP1111693.
- Various parameters characterize the performance of current sensors, including sensitivity and linearity. Sensitivity is related to the magnitude of a change in output voltage from the Hall effect transducer in response to a sensed current. Linearity is related to the degree to which the output voltage from the Hall effect transducer varies in direct proportion to the sensed current.
- The sensitivity of a current sensor is related to a variety of factors. One important factor is the flux concentration of the magnetic field generated in the vicinity of the current conductor and sensed by the Hall effect element. For this reason, some current sensors use a flux concentrator. Another important factor, in particular for a current sensor in which a flux concentrator is not used, is the physical separation between the Hall effect element and the current conductor.
- In accordance with the present invention, an integrated circuit includes a lead frame portion having a plurality of leads and a current conductor portion comprising at least two of the plurality of leads. The integrated circuit also includes a substrate having first and second opposing surfaces. The first surface is proximate to the current conductor portion and the second surface is distal from the current conductor portion. The integrated circuit also includes one or more magnetic field sensing elements disposed proximate to the current conductor portion. The integrated circuit also includes a current sensing circuit disposed on the first surface of the substrate and coupled to the one or more magnetic field sensing elements. The current sensing circuit is adapted to provide an output signal indicative of a current flowing through the current conductor portion. The integrated circuit also includes an overcurrent circuit disposed on the first surface of the substrate. The overcurrent circuit is adapted to sense a voltage drop associated with a current and further adapted to provide an output signal in response to the voltage drop. The output signal from the overcurrent circuit is indicative of the current sensed by the overcurrent circuit being above a predetermined current.
- In accordance with another aspect of the present invention, a method of manufacturing an integrated circuit includes providing a lead frame portion having a plurality of leads comprising at least two leads forming a current conductor portion. The method also includes forming one or more magnetic field transducers disposed proximate to the current conductor portion. The method also includes mounting the substrate to the lead frame portion so that the first surface of the substrate is proximate to the current conductor portion and the second surface of the substrate is distal from the current conductor portion. The method also includes forming a current sensing circuit on the first surface of the substrate and coupled to the one or more magnetic field sensing elements. The current sensing circuit is adapted to provide an output signal indicative of a current flowing through the current conductor portion. The method also includes forming an overcurrent circuit on the first surface of the substrate and coupled to the current conductor portion. The overcurrent circuit is adapted to sense a voltage drop associated with a current and further adapted to provide an output signal in response to the voltage drop. The output signal is indicative of the current sensed by the overcurrent circuit being above a predetermined current.
- The foregoing features of the invention, as well as the invention itself may be more fully understood from the following detailed description of the drawings, in which:
-
FIG. 1 is an isometric view of a current sensor in accordance with the present invention; -
FIG. 2 is a graph showing a relationship between position across a Hall effect element of the current sensor ofFIG. 1 and magnetic field; -
FIG. 3 is an isometric view of another embodiment of a current sensor in accordance with the present invention; -
FIG. 4 is a schematic of a circuit forming part of the current sensor ofFIG. 3 ; -
FIG. 5 is an isometric view of yet another embodiment of a current sensor in accordance with the present invention; -
FIG. 6 is an isometric view of still another embodiment of a current sensor in accordance with the present invention; -
FIG. 6A is an isometric view of still another embodiment of a current sensor in accordance with the present invention; -
FIG. 7 is an isometric view of still another embodiment of a current sensor in accordance with the present invention; -
FIG. 8 is a further isometric view of the current sensor ofFIG. 7 ; -
FIG. 9 is an isometric view of an alternate lead frame having a thinner current conductor portion according to a further aspect of the invention; -
FIG. 9A is a cross-sectional view of an alternate embodiment of the current conductor portion ofFIG. 9 ; -
FIG. 10 is an isometric view of still another embodiment of a current sensor in accordance with the present invention; -
FIG. 11 is an isometric view of an alternate arrangement of the current sensor ofFIG. 10 ; -
FIG. 12 is an isometric view of another alternate arrangement of the current sensor ofFIG. 10 . -
FIG. 13 is an isometric view of another alternate arrangement of the current sensor ofFIG. 10 ; -
FIG. 13A is a cross-sectional view of the current sensor ofFIG. 13 ; -
FIG. 14 is an isometric view of an alternate arrangement of the current sensor ofFIGS. 7 and 8 ; -
FIG. 14A is a cross-sectional view of the current sensor ofFIG. 14 ; -
FIG. 15 is a schematic drawing of an exemplary circuit that can be used in the current sensors ofFIGS. 13, 13A , 14, and 14A, which includes a current sensing circuit and an overcurrent circuit; and -
FIG. 16 is an isometric view of another alternate arrangement of the current sensor ofFIGS. 7 and 8 ; - Referring to
FIG. 1 , an exemplarycurrent sensor 10 in accordance with the present invention includes alead frame 12 having a plurality ofleads 12 a-12 h. The leads 12 a and 12 b are coupled to theleads narrow portion 14 having a width w1. Thecurrent sensor 10 also includes asubstrate 16 having afirst surface 16 a and a second, opposingsurface 16 b. Thesubstrate 16 has amagnetic field transducer 18 which, in some embodiments, can be aHall effect element 18, diffused into thefirst surface 16 a, or otherwise disposed on thefirst surface 16 a. Thesubstrate 16 can be comprised of a semiconductor material, e.g., silicon, or, in an alternate embodiment, thesubstrate 16 can be comprised of an insulating material. - The
substrate 16 is disposed above thelead frame 12 so that thefirst surface 16 a is proximate to thecurrent conductor portion 14 and thesecond surface 16 b is distal from thecurrent conductor portion 14 and more specifically, so that theHall effect element 18 is in close proximity to thecurrent conductor portion 14. In the illustrated embodiment, thesubstrate 16 has an orientation that is upside down (i.e., thefirst surface 16 a is directed downward) relative to a conventional orientation with which a substrate is mounted in an integrated circuit package. - The
substrate 16 has bonding pads 20 a-20 c on thefirst surface 16 a, to which bond wires 22 a-22 c are coupled. The bond wires are further coupled to theleads lead frame 12. - An
insulator 24 separates thesubstrate 16 from thelead frame 12. Theinsulator 24 can be provided in a variety of ways. For example, in one embodiment, a first portion of theinsulator 24 includes a four μm thick layer of a BCB resin material deposited directly on thefirst surface 16 a of thesubstrate 16. A second portion of theinsulator 24 may include a layer of underfill material, for example Staychip™ NUF-2071 E (Cookson Electronics Equipment, New Jersey), deposited on thelead frame 12. Such an arrangement provides more than one thousand volts of isolation between thesubstrate 16 and thelead frame 12. - It will be understood that the
current conductor portion 14 is but a part of the total path through which an electrical current flows. For example, a current having a direction depicted byarrows 26 flows into theleads current conductor portion 14, and out of theleads - With this arrangement, the
Hall effect element 18 is disposed in close proximity to thecurrent conductor portion 14 and at a predetermined position relative to theconductor portion 14, such that a magnetic field generated by an electrical current passing though thecurrent conductor portion 14, in a direction shown byarrows 26, is in a direction substantially aligned with a maximum response axis of theHall effect element 18. TheHall effect element 18 generates a voltage output proportional to the magnetic field and therefore proportional to the current flowing through thecurrent conductor portion 14. The illustratedHall effect element 18 has a maximum response axis substantially aligned with a z-axis 34. Because the magnetic field generated in response to the current is circular about thecurrent conductor portion 14, theHall effect element 18 is disposed just to the side (i.e., slightly offset along a y-axis 32) of thecurrent conductor portion 14, as shown, where the magnetic field is pointed substantially along the z-axis 34. This position results in a greater voltage output from theHall effect element 18, and therefore improved sensitivity. However, a Hall effect element, or another type of magnetic field sensor, for example a magnetoresistance element, having maximum response axis aligned in another direction, can be disposed at another position relative to thecurrent conductor portion 14, for example, on top of the current conductor portion 14 (in a direction along z-axis 34). - While one
Hall effect element 18 is shown on thefirst surface 16 a of thesubstrate 16, it will be appreciated that more than one Hall effect element can be used, as shown in the embodiments ofFIGS. 3 and 5 . Also, additional circuitry, for example an amplifier, can also be diffused in or otherwise disposed on, or supported by the first and/orsecond surfaces substrate 16. Exemplary circuitry of this type is shown inFIG. 4 . - In the embodiment of
FIG. 1 , the close proximity between theHall effect element 18 and thecurrent conductor 14 is achieved by providing theHall effect element 18 on thefirst substrate surface 16 a, which is positioned closer to thecurrent conductor portion 14 than the second surface. In other embodiments, this advantageous close proximity is achieved by providing theHall effect element 18 on thesecond substrate surface 16 b and forming thecurrent conductor portion 14 so as to be in substantial alignment with thesecond surface 16 b, as shown inFIGS. 7 and 8 . - Referring now to
FIG. 2 , agraph 50 illustrates the magnetic flux density in the direction of the z-axis 34 (FIG. 1 ) across theHall element 18, along an x-axis 30 (FIG. 1 ) and the y-axis 32 (FIG. 1 ) in the plane of the Hall effect element 18 (FIG. 1 ), for a current throughcurrent conductor portion 14 on the order of 10A. A center (not shown) of theHall effect element 18 corresponds to three hundred microns on anabscissa 52. Amantissa 54 corresponds to magnetic flux. - A
magnetic flux curve 56 corresponds to the change in magnetic flux in the z-axis 34 relative to position along thex-axis 30.Magnetic flux curve 58 corresponds to the change in magnetic flux in the z-axis 34 relative to position along the y-axis 32. - The magnetic flux curves 56, 58 can be characterized as being substantially flat in the vicinity of the Hall element, which is centered at 300 μm. Therefore, the output of the
Hall effect element 18, which is sensitive to magnetic fields in the direction of the z-axis 34, is relatively insensitive to the position of theHall effect element 18 along thex-axis 30 and along the y-axis 32. - An illustrative
Hall effect element 18 has dimensions along thex-axis 30 and along the y-axis 32 on the order of 200 microns and therefore theHall effect element 18 lies in a region between 200 microns and 400 microns on theabscissa 52. A change of position of theHall effect element 18 by 50 microns either along thex-axis 30 or along the y-axis 32 results in little change in the magnetic field sensed by the Hall effect element. Therefore, the position of the Hall effect element in thex-axis 30 and the y-axis 32 can vary with manufacturing position tolerances without substantial effect upon the sensitivity of the current sensor 10 (FIG. 1 ). - The width w1 (
FIG. 1 ) of thecurrent conductor portion 14 in the x-direction 30 relative to the dimension of theHall effect element 18 in the x-direction 30 significantly affects the uniformity of the flux density in the z-direction 34 with position along theHall effect element 18 in thex-direction 30. In particular, the longer the current conductor portion 14 (i.e., the greater the width w1,FIG. 1 ), relative to the width of theHall effect element 18 in thex-direction 30, the longer thecurve 56 remains substantially flat. - The width w1 (
FIG. 1 ) is selected in accordance with a variety of factors, including, but not limited to a desired sensitivity of the current sensor 10 (FIG. 1 ), and a desired reduction of performance variation resulting from manufacturing variation in relative position of thecurrent path 14 and theHall effect element 18. In general, it will be appreciated that selecting the width w1 to be comparable to a width of theHall effect element 18, provides the greatest sensitivity of thecurrent sensor 10. However, it will also be appreciated that selecting the width w1 to be greater than the width of theHall effect element 18 provides the smallest performance variation resulting from manufacturing tolerance of Hall element positional placement in thex-direction 30. - Referring now to
FIG. 3 , another exemplarycurrent sensor 70 in accordance with the present invention includes alead frame 72 having a plurality ofleads 72 a-72 h and acurrent conductor portion 74 having a width w2. The current sensor also includes asubstrate 76 having afirst surface 76 a and a second, opposingsurface 76 b. Thesubstrate 76 has first and secondHall effect elements first surface 76 a, or otherwise disposed on or supported by thefirst surface 76 a. Thesubstrate 76 is disposed on thelead frame 72 so that the Hall effect element 78 is in close proximity to thecurrent conductor portion 74. In the illustrated embodiment, thesubstrate 76 has an orientation that is upside down (i.e., thefirst surface 76 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package. An insulator (not shown) can separate thesubstrate 76 from thelead frame 72. The insulator can be the same as or similar to theinsulator 24 shown inFIG. 1 . - With this arrangement, both of the
Hall effect elements current conductor portion 74 and at predetermined positions relative to thecurrent conductor portion 74 such that a magnetic field generated by an electrical current passing though thecurrent conductor portion 74 in a direction shown byarrows 86, is in a direction substantially aligned with a maximum response axis of theHall effect elements Hall effect elements axis 94. Therefore, theHall effect elements current conductor portion 74, as shown, where the magnetic field is pointed along the z-axis 94. In one embodiment, theHall effect elements current conductor portion 74. However, Hall effect elements, or another type of magnetic field sensors, for example magnetoresistance elements, having maximum response axes aligned in another direction, can be disposed at other positions relative to thecurrent conductor portion 74, for example, on top (in a direction of the z-axis 94) of thecurrent conductor portion 74. - In operation, current flows into the
leads current conductor portion 74, and out of theleads current conductor portion 74 generates a magnetic field which is sensed by theHall effect elements Hall effect elements current conductor portion 74 and at a predetermined position relative to thecurrent conductor portion 74 for which the magnetic field generated by the current is substantially aligned with the maximum response axis of theHall effect elements Hall effect elements - It will be appreciated that the magnetic fields experienced by the first and the second
Hall effect elements axis 94. Therefore, if polarized in the same direction, the outputs of the twoHall effect elements Hall effect elements Hall effect elements - As an initial advantage, the outputs of two
Hall effect elements current sensor 70 has twice the sensitivity of thecurrent sensor 10 ofFIG. 1 . - As a second advantage, the
current sensor 70 is relatively insensitive to variation in the position of theHall effect elements axis 92. This is because, when moved in the direction of the y-axis 92, the voltage output from one of theHall effect elements Hall effect elements - While the
lead frame 72 is shown to have theflat leads 72 a-72 h suitable for surface mounting to a circuit board, it will be appreciated that a lead frame having bent leads, like thelead frame 12 ofFIG. 1 , can also be used. Also, while twoHall effect elements - Referring now to
FIG. 4 , a summingcircuit 100 suitable for performing the differential signal summation described in conjunction withFIG. 3 is shown coupled to twoHall effect elements Hall effect elements Hall effect elements FIG. 3 . Here, each of theHall effect elements Hall effect elements magnetic fields Hall effect elements output voltages output voltage 103 a is coupled toamplifier 104 a arranged in a non-inverting configuration and theoutput voltage 103 b is coupled to theamplifier 104 b arranged in an inverting configuration. Therefore, theamplifier output voltages magnetic fields amplifier output voltages amplifier 108 to generate a differential summation, or a difference of theoutput voltages output voltages greater output voltage 110 at the output ofamplifier 108. - The summing
circuit 100 can be used in thecurrent sensor 70 ofFIG. 3 , in which caseHall effect elements Hall effect elements circuit 100 is diffused into, or otherwise disposed upon, thefirst surface 76 a of thesubstrate 76. In another embodiment, the summingcircuit 100 is diffused into, or otherwise disposed upon, thesecond surface 76 b of thesubstrate 76, while theHall effect elements first surface 76 a, coupled to the other circuit components though vias or the like. - Referring now to
FIG. 5 , in which like elements ofFIG. 1 are shown having like reference designations, another exemplarycurrent sensor 120 includes asubstrate 126 having afirst surface 126 a and a second, opposingsurface 126 b. Here, four Hall effect elements 128 a-128 d are diffused into or otherwise disposed on thefirst surface 126 a of thesubstrate 126. Thesubstrate 126 is positioned relative to thelead frame 12 such that first and secondHall effect element current conductor portion 14 along a y-axis 142, and third and fourthHall effect elements 128 c, 128 d are on the opposite side of thecurrent conductor portion 14 along the y-axis 42, as shown. In one embodiment, theHall effect elements current conductor portion 14 by an amount equal to and opposite from the amount that theHall effect elements 128 c, 128 d are offset (along the y-axis 142) from thecurrent conductor portion 14. - With this arrangement, the Hall effect elements 128 a-128 d are disposed in close proximity to the
current conductor portion 14 and at predetermined positions relative to theconductor portion 14, such that a magnetic field generated by an electrical current passing though thecurrent conductor portion 14 in a direction shown byarrows 86, is in a direction substantially aligned with a maximum response axis of the Hall effect elements 128 a-128 d. Here, each of the Hall effect elements 128 a-128 d has a maximum response axis aligned with a z-axis 144. In the illustrated embodiment, theHall effect elements current conductor portion 144 than theHall effect elements 128 c, 128 d, as shown, where the magnetic field is pointed along the z-axis 144. However, Hall effect elements, or another type of magnetic field sensors, for example magnetoresistance elements, having maximum response axes aligned in another direction, can be disposed at other positions relative to thecurrent conductor portion 14, for example, on top (in a direction of the z-axis 144) of thecurrent conductor portion 14. It will be appreciated that the first and secondHall effect elements axis 144 and the third and forthHall effect elements 128 c, 128 d are exposed to a magnetic field in the opposite direction along the z-axis 144. - The four Hall effect elements 128 a-128 d can be coupled to an electronic circuit arranged as a summing circuit, understood by one of ordinary skill in the art, in order to achieve certain advantages. The summing circuit, for example, can include two of the summing
circuits 100 ofFIG. 4 . In one embodiment, the summing circuit can couple a first two of the Hall effect elements 128 a-128 d with a first summing circuit, such as the summingcircuit 100 ofFIG. 4 , and a second two of the Hall effect elements 128 a-128 d with a second summing circuit, such as the summingcircuit 100. With another amplifier, an output of the first summing circuit can be summed with an output of the second summing circuit. As an initial advantage, the four Hall effect elements 128 a-128 d, coupled to a summing circuit as described, in the presence of the current, provide a voltage output four times the magnitude of a voltage output from a single Hall effect element, for example theHall effect element 18 ofFIG. 1 , in the presence of the same current. Therefore, thecurrent sensor 120 has four times the sensitivity of thecurrent sensor 10 ofFIG. 1 . - As a second advantage, the
current sensor 120 is relatively insensitive to variation in the position of the Hall effect elements 128 a-128 d in the direction of the y-axis 142. This is because, when moved in the direction of the y-axis 142, the voltage output from two of the four Hall effect elements 128 a-128 d tends to increase while the voltage output from the other two of the four Hall effect elements 128 a-128 d tends to decrease. Therefore, when coupled as a summing circuit, the circuit output is relatively invariant to the y-axis position of the Hall effect elements. - Referring now to
FIG. 6 , an exemplarycurrent sensor 150 in accordance with the present invention includes alead frame 152 having a plurality ofleads 152 a-152 h and acurrent conductor portion 154. Thecurrent sensor 150 also includes asubstrate 166 having afirst surface 166 a and a second, opposingsurface 166 b. Thesubstrate 166 has aHall effect element 158 diffused into thefirst surface 166 a, or otherwise disposed on thefirst surface 166 a. Thesubstrate 166 is disposed on thelead frame 152 so that theHall effect element 158 is in close proximity to thecurrent conductor portion 154. Thesubstrate 166 has an orientation that is upside down (i.e., thefirst surface 166 a is directed downward) in relation to the conventional orientation with which a substrate is mounted into an integrated circuit package. Thesubstrate 166 is a flip-chip having solder balls 160 a-160 c on thefirst surface 166 a of thesubstrate 166. The solder balls 160 a-160 c couple directly to theleads 152 e-152 h as shown. Aninsulator 164 separates thesubstrate 166 from thelead frame 152. Theinsulator 164 can be the same as or similar to theinsulator 24 shown inFIG. 1 . - With this arrangement, the
Hall effect element 158 is disposed in close proximity to thecurrent conductor portion 154 and at a predetermined position relative to theconductor portion 154, such that a magnetic field generated by an electrical current passing though thecurrent conductor portion 154 in a direction shown byarrows 168, is in a direction substantially aligned with a maximum response axis of theHall effect element 158. TheHall effect element 158 has a maximum response axis aligned with a z-axis 174. Therefore, theHall effect element 158 is disposed just to the side (i.e., slight offset along a y-axis 172) of thecurrent conductor portion 14, as shown, where the magnetic field is pointed along the z-axis 174. However, a Hall effect element, or another type of magnetic field sensor, for example a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to thecurrent conductor portion 154, for example, on top (in a direction of the z-axis 174) of thecurrent conductor portion 154. - Operation of the
current sensor 150 is like the above-described operation of thecurrent sensor 10 ofFIG. 1 . TheHall effect element 158, being is close proximity to thecurrent conductor portion 154, results in a greater output voltage from theHall effect element 158, and therefore an improved sensitivity. - While only one
Hall effect element 158 is shown on thefirst surface 166 a of thesubstrate 166, it will be appreciated that more than one Hall effect element can be used with this invention. Other circuitry, for example an amplifier, can also be diffused in or otherwise coupled to or supported by the first and/orsecond surfaces substrate 166. - While three solder balls 160 a-160 c are shown, any number of solder balls can be provided, including dummy solder balls for stabilizing the
substrate 166. Also, while solder balls 160 a-160 c are shown, other connection methods can also be used, including, but not limited to gold bumps, eutectic or high lead solder bumps, no-lead solder bumps, gold stud bumps, polymeric conductive bumps, anisotropic conductive paste, or conductive film. - Referring now to
FIG. 6A , in which like elements ofFIG. 6 are shown having like reference designations, an exemplarycurrent sensor 180 in accordance with the present invention includes a flux concentrator 182 and aflux concentrating layer 184. The flux concentrator is located proximate theHall effect sensor 158, adjacent to and below thefirst surface 166 a of thesubstrate 166. Theflux concentrating layer 184 is disposed on (or adjacent to and above) thesecond surface 166 b of thesubstrate 166. - In operation, the flux concentrator 182 and the
flux concentrating layer 184 each tend to concentrate the magnetic flux generated by the current passing through thecurrent conductor portion 154 so as to cause thecurrent sensor 180 to have a higher sensitivity than thecurrent sensor 150 ofFIG. 6 . - The flux concentrator 182 and the
flux concentrating layer 184 can each be comprised of a variety of materials, including but not limited to, ferrite, Permalloy, and iron. An adhesion layer (not shown), for example, a titanium or chromium layer, may be present and would be understood by one skilled in the art. - While the flux concentrator 182 is shown having a cubic shape, in other embodiments, the flux concentrator can have another shape, for example, a polyhedral shape, an elliptical shape, or a spherical shape. While both the flux concentrator 182 and the
flux concentrating layer 184 are shown, in other embodiments, only one of the flux concentrator 182 and theflux concentrating layer 184 can be provided. Also, while the flux concentrator 182 and theflux concentrating layer 184 are shown in conjunction with onemagnetic field transducer 158, it should be appreciated that the flux concentrator 182 and theflux concentrating layer 184 can also be applied to configurations having more than the onemagnetic field transducer 158, for example, the configurations shown inFIGS. 1, 3 , and 5. - Referring now to
FIG. 7 , another exemplarycurrent sensor 200 in accordance with the present invention includes alead frame 202 having a plurality ofleads 202 a-202 h. Thecurrent sensor 200 also includes asubstrate 206 having afirst surface 206 a and a second, opposingsurface 206 b. Thesubstrate 206 has aHall effect element 208 diffused into thefirst surface 206 a, or otherwise disposed on thefirst surface 206 a. Aconductive clip 204 having acurrent conductor portion 204 a is coupled to theleads 202 a-202 d. Features of theconductive clip 204 are shown inFIG. 8 . Suffice it to say here that the conductive clip is formed having a bend such that theconductive clip 204 passes up and over thefirst surface 206 a of thesubstrate 206. Thesubstrate 206 is disposed on thelead frame 202 so that theHall effect element 208 is in close proximity to thecurrent conductor portion 204 a. In the illustrated embodiment, thesubstrate 206 has a conventional mounting orientation with thefirst surface 206 a directed upward. Thesubstrate 206 has bonding pads 212 a-212 c on thefirst surface 206 a, to which bond wires 210 a-210 c are coupled. The bond wires 210 a-210 c are further coupled to theleads insulator 214 can be provided to isolate thesubstrate 206 from theconductive clip 204. Theinsulator 214 can be the same as or similar to theinsulator 24 shown inFIG. 1 . - With this arrangement, the
Hall effect element 208 is disposed in close proximity to thecurrent conductor portion 204 a, which passes up and over thefirst surface 206 a of thesubstrate 206. TheHall effect element 208 is disposed at a predetermined position relative to theconductor portion 204 a such that a magnetic field generated by an electrical current passing though thecurrent conductor portion 204 a in a direction shown byarrows 216, is in a direction substantially aligned with a maximum response axis of theHall effect element 208. TheHall effect element 208 has a maximum response axis aligned with a z-axis 224. In the illustrated embodiment, theHall effect element 208 is disposed just to the side (i.e., slight offset along a y-axis 222) of thecurrent conductor portion 204 a, as shown, where the magnetic field is pointed along the z-axis 224. However, a Hall effect element, or another type of magnetic field sensor, for example a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to thecurrent conductor portion 204 a, for example, essentially aligned above or below (in a direction of the z-axis 224) with thecurrent conductor portion 204 a. - In operation, current flows into the
leads conductive clip 204, through thecurrent conductor portion 204 a, and out of theleads current conductor portion 204 a generates a magnetic field, which is sensed by theHall effect element 208. TheHall effect element 208 generates a voltage output proportional to the magnetic field and therefore proportional to the current flowing though thecurrent conductor portion 204 a. As described above, theHall effect element 208 is in very close proximity to thecurrent conductor portion 204 a and at a predetermined position relative to thecurrent conductor portion 204 a in which the magnetic field generated by the current is substantially aligned with the maximum response axis of theHall effect element 208. This position results in a greater voltage output from theHall effect element 208, and therefore improved sensitivity. - While only one
Hall effect element 208 is shown on thesecond surface 206 b of thesubstrate 206, it will be appreciated that more than one Hall effect element can be used. In particular, an embodiment having two Hall effect elements can be similar to thecurrent sensor 70 ofFIG. 3 and an embodiment having four Hall effect elements can be similar to thecurrent sensor 120 ofFIG. 5 . Also, additional circuitry, for example an amplifier, can be diffused in or otherwise coupled to the first and/orsecond surfaces substrate 206. - It should be appreciated that the
conductive clip 204 can be formed in a variety of ways and from a variety of materials. In one particular embodiment, theconductive clip 204 is stamped, for example, from a copper-sheet. In another embodiment, theconductive clip 204 is formed from foil, for example copper foil. In yet another embodiment, theconductive clip 204 is formed by an etching process. Theconductive clip 204 allows the use of the conventional mounting orientation of thesubstrate 206 while bringing thecurrent conductor portion 204 a very close to theHall effect element 208. - The
conductive clip 204 can be provided having a thickness selected in accordance with an amount of current that will pass through theconductive clip 204. Therefore, if a current sensor adapted to sense relatively high currents is desired, the conductive clip can be relatively thick, whereas, if a current sensor adapted to sense relatively low currents is desired, theconductive clip 204 can be relatively thin. In another embodiment, if a current sensor adapted to sense relatively high currents is desired, more than oneconductive clip 204 can be stacked in contact with other conductive clips to provide an increased effective thickness that is thicker than any oneconductive clip 204, and therefore, able to carry more current. - In the embodiment of
FIG. 7 , the close proximity between theHall effect element 208 and thecurrent conductor portion 204 a is achieved by providing theHall effect element 208 on thefirst substrate surface 206 a, which is positioned closer to thecurrent conductor portion 204 a than thesecond surface 206 b. In other embodiments, this advantageous close proximity is achieved by providing theHall effect element 208 on thesecond substrate surface 206 b and forming thecurrent conductor portion 204 a so as to be in substantial alignment with thesecond surface 206 b. - Referring now to
FIG. 8 , in which like elements ofFIG. 7 are shown having like reference designations, theconductive clip 204 is shown before it is coupled to theleads 202 a-202 d. Theconductive clip 204 includes thecurrent conductor portion 204 a, atransition region 204 b, abend region 204 c, and abonding region 204 d. Thebonding region 204 d includes twoportions 204 e, 204 f which couple to theleads 202 a-202 d. Thetransition region 204 b can be elevated relative to thecurrent conductor portion 204 a to avoid contact with thesubstrate 206. - While Hall effect elements have been shown and described in association with embodiments of this invention, it will be recognized that other types of magnetic field sensors can be used. For example, magnetoresistance elements can be used in place of the Hall effect elements. However, a conventional magnetoresistance element has a maximum response axis that is perpendicular to the maximum response axis of a conventional Hall effect element. One of ordinary skill in the art will understand how to position one or more magnetoresistance elements relative to a current conductor portion in accordance with embodiments of the present invention to achieve the same results as the Hall effect element embodiments herein described.
- Referring now to
FIG. 9 , alead frame 250 is shown having a shape similar to thelead frame 72 ofFIG. 3 and thelead frame 152 ofFIG. 6 . Thelead frame 250 has a plurality of thinned portions 252 a-252 n that are thinner than other portions of thelead frame 250. The thinner portions can be provided by a variety of processes, including, but not limited to, chemical etching and stamping. - A
current conductor portion 254 has asurface 254 a and a thickness t1 which can be the same as or similar to the thickness of others of the thinnedportion 252 b-252 n. Other portions of the lead frame have a thickness t2. In one particular embodiment, the thickness t1 of the current carryingportion 254 is the same as the thickness of the other thinnedportions 252 b-252 n, and the thickness t1 is approximately half of the thickness t2. In one embodiment, thecurrent conductor portion 254 has a cross section that is essentially rectangular, having the thickness t1. - It will be recognized that, in the presence of a current passing through the
current conductor portion 254, thecurrent conductor portion 254 being thinner, for example, than thecurrent conductor portion 74 ofFIG. 3 , has a higher current density near thesurface 254 a than thecurrent conductor portion 74 ofFIG. 3 has near thesurface 74 a in the presence of a similar current. In other words, the current is compressed to be closer to thesurface 254 a than it would otherwise be with a thicker current conductor portion. As a result, a magnetic field generated by the current has a higher flux density in proximity to thesurface 254 a. - Therefore, when the
lead frame 250 is used in place of thelead frame 72 ofFIG. 3 , theHall effect elements - Others of the thinned
portion 252 b-252 n provide other advantages. For example, when thelead frame 250 is molded into a plastic surrounding body, the other thinnedportions 252 b-252 n tend to lock thelead frame 250 more rigidly into the molded body. - The thickness t1 is selected in accordance with a variety of factors, including, but not limited to, a maximum current to be passed through the
current conductor portion 254. - It will be understood that thinned portions can be applied to others of the lead frames shown above in embodiments other than the embodiment of
FIG. 3 in order to achieve the same advantages. - Referring now to
FIG. 9A , an alternatecurrent conductor portion 270, suitable for replacing thecurrent conductor portion 254 ofFIG. 9 , has a T-shaped cross section as would be seen from a cross-section taken alongline 9A-9A ofFIG. 9 . The T-shape has asurface 270 a, a first thickness t3, and a second thickness t4. The thickness t3 can be the same as or similar to the thickness t1 ofFIG. 9 , and the thickness t4 can be the same as or similar to the thickness t2 ofFIG. 9 . In one particular embodiment the thickness t3 is approximately half of the thickness t4. - For substantially the same reasons describe above in conjunction with
FIG. 9 , a magnetic field generated in response to a current passing through thecurrent conductor portion 270 is higher in proximity to thesurface 270 a than it would be if thecurrent conductor portion 270 had a uniform thickness t4. - While the current conductor portion 254 (
FIG. 9 ) and thecurrent conductor portion 270 have been described to have a rectangular cross section and a T-shaped cross section respectively, it should be appreciated that other cross-sectional shapes can be provided to achieve the above advantages. - Referring now to
FIG. 10 , another exemplarycurrent sensor 300 in accordance with the present invention includes a lead frame 302 (also referred to herein as a lead frame portion) having a plurality ofleads 302 a-302 h and acurrent conductor portion 304 provided as a combination of a firstcurrent conductor portion 304 a and a secondcurrent conductor portion 304 b. Thecurrent sensor 300 also includes asubstrate 306 having afirst surface 306 a and a second, opposing,surface 306 b. Thesubstrate 306 has aHall effect element 308 diffused into thefirst surface 306 a, or otherwise disposed on or supported by thefirst surface 306 a. Thesubstrate 306 is disposed on thelead frame 302 so that theHall effect element 308 is in close proximity to thecurrent conductor portion 304. In the illustrated embodiment, thesubstrate 306 has an orientation that is upside down (i.e., thefirst surface 306 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package. Thesubstrate 306 is a flip-chip having solder balls 320 a-320 e on thefirst surface 306 a of thesubstrate 306. The solder balls 320 a-320 e couple directly to theleads 302 e-302 h. An insulatinglayer 330 can separate thesubstrate 306 from thelead frame 302. The insulatinglayer 330 can be the same as or similar to theinsulator 24 shown inFIG. 1 . - In one particular embodiment, the second
current conductor portion 304 b is deposited directly on thefirst surface 306 a of thesubstrate 306 and no insulatinglayer 330 is used. The secondcurrent conductor portion 304 b can be deposited by any conventional integrated circuit deposition technique, including, but not limited to, sputtering and electroplating. In other embodiments, the secondcurrent conductor portion 304 b is a conductive structure separate from but proximate to thefirst surface 306 a of thesubstrate 306, and the insulatinglayer 330 is disposed between the secondcurrent conductor portion 304 b and thefirst surface 306 a of thesubstrate 306. - It should be recognized that the
Hall effect element 308, the insulatinglayer 330, the secondcurrent conductor portion 304 b, and the first current conductor portion are under thesubstrate 306 as shown. - With these arrangements, the
Hall effect element 308 is disposed in close proximity to thecurrent conductor portion 304 and at a predetermined position relative to thecurrent conductor portion 304 such that a magnetic field generated by an electrical current 316 passing though thecurrent conductor portion 304 is in a direction substantially aligned with a maximum response axis of theHall effect element 308. Here, theHall effect element 308 has a maximum response axis aligned with a z-axis 326. Therefore, theHall effect element 308 is disposed to a side (i.e., slightly offset along a y-axis 324) of thecurrent conductor portion 304, as shown, where the magnetic field is pointed along the z-axis 326. However, a Hall effect element, or another type of magnetic field sensor, for example, a magnetoresistance element, having a maximum response axis aligned in another direction, can be disposed at another position relative to thecurrent conductor portion 304, for example, on top (in a direction of the z-axis 326) of thecurrent conductor portion 304. - The insulating
layer 330 can be an interposing insulating layer or a substrate insulating layer associated with thesubstrate 306. In some embodiments for which the insulatinglayer 330 is an interposing insulating layer, the insulatinglayer 330 is a ceramic interposing insulating layer. - In some embodiments for which the insulating
layer 330 is a substrate insulating layer associated with thesubstrate 306, the insulatinglayer 330 is a substrate taped insulating layer formed with a taping process. The substrate taped insulating layer can be comprised of a tape applied to the substrate, including but not limited to, a polymer tape, for example a Kapton® tape. - In still other embodiments for which the insulating
layer 330 is a substrate insulating layer associated with thesubstrate 306, the insulatinglayer 330 is a substrate deposited insulating layer formed with a deposition process. The deposition process used to form the insulatinglayer 330 can include a variety of processes, including, but not limited to, a screen printing process, a spin depositing process, a sputtering process, a plasma enhanced chemical vapor deposition (PECVD) process, and a low-pressure chemical vapor deposition (LPCVD) process. The screen printing process can result in a substrate insulating layer comprised of a variety materials, including but not limited to, polymer or ceramic materials. The spin depositing process can result in a substrate insulting layer comprised of a variety materials, including but not limited to a polymer, for example, polyimide (e.g., trade name Pyralin®) or bisbenzocyclobutene (BCB) (e.g., trade name Cyclotene®). The sputtering process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide. The PECVD process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide. The LPCVD process can result in a substrate insulting layer comprised of a variety materials, including but not limited to, nitride or oxide. - In still other embodiments for which the insulating
layer 330 is a substrate insulating layer associated with thesubstrate 306, the insulatinglayer 330 is a substrate oxide insulating layer formed with an oxide generation process. The substrate oxide insulating layer can be comprised, for example, of a silicon dioxide. - In operation, the current 316 flows into the
leads current conductor portion 304, and out of theleads current conductor portion 304 generates a magnetic field, which is sensed by theHall effect element 308. As described above, theHall effect element 308 is in very close proximity to thecurrent conductor portion 304 and at a predetermined position relative to thecurrent conductor portion 304 at which the magnetic field generated by the current is substantially aligned with the maximum response axis of theHall effect element 308. This placement results in a greater voltage output from theHall effect element 308, and therefore greater sensitivity. - With this arrangement, it will be appreciated that the current 316 flowing through the
current conductor portion 304 splits between the first and secondcurrent conductor portions - While the
lead frame 302 is shown to have thebent leads 302 a-302 h suitable for surface mounting to a circuit board, it will be appreciated that a lead frame having leads with other shapes can also be used, including but not limited to, through hole leads having a straight shape. - While only one
Hall effect element 308 is shown on thefirst surface 306 a of thesubstrate 306, it will be appreciated that more than one Hall effect element can be used with this invention. Other circuitry, for example an amplifier, can also be diffused in or otherwise coupled to or supported by the first and/orsecond surfaces substrate 306. - While five solder balls 320 a-320 e are shown, any number of solder balls can be provided, including dummy solder balls for stabilizing the
substrate 306. Also, while solder balls 320 a-320 e are shown, other connection methods can also be used, including, but not limited to gold bumps, eutectic or high lead solder bumps, no-lead solder bumps, gold stud bumps, polymeric conductive bumps, anisotropic conductive paste, conductive film, or wire bonds. - While the substrate is 306 is shown in a flip-chip arrangement, in other embodiments, the
substrate 306 can be conventionally mounted such that thefirst surface 306 a is above thesecond surface 306 b when theintegrated circuit 300 is mounted to an uppermost surface of a circuit board. With these arrangements, the first and secondcurrent conductor portions first surface 306 a of thesubstrate 306. - Referring now to
FIG. 11 , in which like elements ofFIG. 10 are shown having like reference designations, acurrent sensor 350 differs from thecurrent sensor 300 ofFIG. 10 by providing acurrent conductor portion 354 different than thecurrent conductor portion 304 ofFIG. 10 . Thecurrent conductor portion 354 includes a firstcurrent conductor portion 354 a and the secondcurrent conductor portion 304 b. Alead frame 352 having the firstcurrent conductor portion 354 a does not form a continuous current path, unlike thelead frame 302 having the firstcurrent conductor portion 304 a ofFIG. 10 . With this arrangement, it will be appreciated that all of the current 316 flowing through thecurrent conductor portion 354 passes through the secondcurrent conductor portions 304 b. Therefore, the current 316 passes closer to theHall effect element 308 than in thecurrent sensor 300 ofFIG. 10 , resulting in a higher sensitivity. - As described above in conjunction with
FIG. 10 , while thesubstrate 306 is shown in a flip-chip arrangement, in other embodiments, thesubstrate 306 can be conventionally mounted such that thefirst surface 306 a is above thesecond surface 306 b when theintegrated circuit 300 is mounted to an uppermost surface of a circuit board. With these arrangements, the first and secondcurrent conductor portions first surface 306 a of thesubstrate 306. - Referring now to
FIG. 12 , in which like elements ofFIG. 10 are shown having like reference designations, acurrent sensor 400 differs from thecurrent sensor 300 ofFIG. 10 by providing acurrent conductor portion 304 having only thecurrent conductor portion 304 a (i.e., there is nocurrent conductor portion 304 b,FIG. 10 ). Thelead frame 302 having the firstcurrent conductor portion 304 a forms a continuous current path. With this arrangement, it will be appreciated that all of the current 316 passes through thecurrent conductor portion 304 a. - An insulating
layer 402 is disposed between thecurrent conductor portion 304 a and thefirst surface 306 a of thesubstrate 306. In some embodiments, the insulatinglayer 402 is an interposing insulating layer, for example a ceramic layer as described above in conjunction withFIG. 10 . In other embodiments, the insulatinglayer 402 is a substrate insulating layer associated with the substrate. In other embodiments, the insulatinglayer 402 is a lead frame insulating layer associated with thelead frame 302. It will be appreciated that, when associated with the lead frame, the insulatinglayer 402 can extend beyond thesubstrate 306 in a direction along the y-axis 324. This arrangement provides enhanced reliability, since an edge of thesubstrate 306 is less likely to contact thelead frame 302. - Interposing insulating layers and substrate insulating layers are described above, in conjunction with
FIG. 10 . - In some embodiments for which the insulating
layer 402 is a lead frame insulating layer associated with thelead frame 302, the insulatinglayer 402 is a lead frame taped insulating layer formed with a taping process. The lead frame taped insulating layer can be comprised of a tape applied to the lead frame, including but not limited to, a polymer tape, for example, a Kapton® tape. - In other embodiments for which the insulating
layer 402 is a lead frame insulating layer associated with thelead frame 302, the insulatinglayer 402 is a lead frame sprayed insulating layer formed with a spraying process. The lead frame sprayed insulting layer can be comprised of a variety of materials, including but not limited to a polymer, for example, a polyimide (e.g., trade name Pyralin®), a bisbenzocyclobutene (BCB) (e.g., trade name Cyclotene®) a sprayed dielectric, (e.g., trade names 3M Scotch® Insulating Spray 1601 and Loctite® ShadowCure® 3900), or a spray ceramic coating. - In other embodiments for which the insulating
layer 402 is a lead frame insulating layer associated with thelead frame 302, the insulatinglayer 402 is a lead frame deposited insulating layer formed with a deposition process. The lead frame deposited insulating layer can be formed with a variety of processes, including, but not limited to a screen printing process. The screen printing process can result in a lead frame deposited insulting layer comprised of a variety of materials, including but not limited to, polymers or ceramics. In still other embodiments, the lead frame deposited insulating layer is formed with a vacuum deposition process. For these embodiments, the lead frame deposited insulating layer can be comprised, for example, of a polymer, for example, parylene. - In still other embodiments for which the insulating
layer 402 is a lead frame insulating layer associated with thelead frame 302, the insulatinglayer 402 is a lead frame oxide insulating layer formed with an oxide generation process. The lead frame oxide insulating layer can be comprised, for example, of a sputtered oxide layer disposed onto thelead frame 302. - Referring now to
FIG. 13 , another exemplarycurrent sensor 450 includes a lead frame 452 (also referred to herein as a lead frame portion) having a plurality ofleads 452 a-452 h and acurrent conductor portion 454. Thelead frame 452 can be similar to thelead frame 302 ofFIG. 12 . Thecurrent sensor 450 also includes asubstrate 456 having afirst surface 456 a and a second, opposing,surface 456 b. Thesubstrate 456 has aHall effect element 458 diffused into thefirst surface 456 a, or otherwise disposed on or supported by thefirst surface 456 a. Thesubstrate 456 is disposed on thelead frame 452 so that theHall effect element 458 is in close proximity to thecurrent conductor portion 454. In the illustrated embodiment, thesubstrate 456 has an orientation that is upside down (i.e., thefirst surface 456 a is directed downward) in relation to the conventional orientation of a substrate mounted in an integrated circuit package. Thesubstrate 456 is arranged as a flip-chip having solder balls 460 a-460 e on thefirst surface 456 a of thesubstrate 456. The solder balls 460 a-460 e couple directly to theleads 452 e-452 h. An insulatinglayer 470 can separate thesubstrate 456 from thelead frame 452. The insulatinglayer 470 can be the same as or similar to theinsulator 24 shown inFIG. 1 . The insulatinglayer 470 can cover a substantial portion of thesurface 456 a. The insulating layer hasregions FIG. 13A below. - The
current conductor portion 454 has twofeatures current conductor portion 454 in a direction of a z-axis 476. Thebumps current conductor portion 454 and thefirst surface 456 a of thesubstrate 456. In particular, the twobumps first surface 456 a of thesubstrate 456, providing an electrical coupling to circuits (not shown) also disposed on thefirst surface 456 a of thesubstrate 456. The electrical coupling and the circuits coupled thereto are discussed below in greater detail in conjunction withFIG. 15 . - The
lead frame 452 having the firstcurrent conductor portion 454 forms a continuous current path. With this arrangement, it will be appreciated that most of a current 466 passes through thecurrent conductor portion 454, while some small amount of the current 466 flows into the above-mentioned circuits on thesubstrate 456 via thebumps current conductor portion 454. - In some embodiments, the insulating
layer 470 is an interposing insulating layer, for example a ceramic layer. In other embodiments, the insulatinglayer 470 is a substrate insulating layer associated with the substrate. In other embodiments, the insulatinglayer 470 is a lead frame insulating layer associated with thelead frame 452. - Interposing insulating layers, substrate insulating layers, and lead frame insulating layers are described above in conjunction with
FIG. 10 . - It will become apparent from discussion below in conjunction with
FIGS. 13A and 15 , that thebumps current conductor portion 454 to circuitry adapted to detect an overcurrent condition, i.e., adapted to detect a current passing through thecurrent conductor portion 452 a, which is greater than a predetermined current level or current threshold. To this end, the circuitry can detect a voltage difference between thefirst bump 454 a and thesecond bump 454 b, which is larger than a predetermined voltage drop or voltage threshold. - While only the one
current conductor portion 454 is shown, it should be understood that a second current conductor portion can also be used. The second current conductor portion can be the same as or similar to the secondcurrent conductor portion 304 b ofFIG. 10 , and can be is similarly disposed upon thefirst surface 456 a of thesubstrate 456 or upon theinsulator 470. - Referring now to
FIG. 13A , in which like elements ofFIG. 13 are shown having like reference designations, thecurrent conductor portion 454 includes thebump 454 a, which couples thecurrent conductor portion 454 through theregion 470 a of the insulatinglayer 470 to thefirst surface 456 a of thesubstrate 456. - The
Hall effect element 458 is disposed in or on thefirst surface 456 a of thesubstrate 456.Other circuitry 480, electrically coupled to thebump 454 a, can also be disposed in or on thefirst surface 456 a of thesubstrate 456.Exemplary circuitry 480 is described below in conjunction withFIG. 15 . - In other embodiments, a
wire bond 478 or the like, here shown as a phantom line to indicate that it is an alternative arrangement to thebump 454 a, can be used to couple thecurrent conductor portion 454 through theregion 470 a of the insulatinglayer 470 to thefirst surface 456 a of thesubstrate 456. It will be understood that a second wire bond (not shown) can be used in place of theother bump 454 b ofFIG. 13 . While thewire bond 478 appears to terminate to thesubstrate 456 directly above thecurrent conductor portion 454, it will be appreciated that the termination can be to the side of thecurrent conductor portion 454. - Referring now to
FIG. 14 , another exemplarycurrent sensor 500 includes alead frame 502 having a plurality ofleads 502 a-502 h. Only leads 502 c and 502 d shown for clarity, however, it will be understood that other ones of theleads 502 a-502 h are arranged in a conventional lead arrangement. Thecurrent sensor 500 also includes asubstrate 506 having afirst surface 506 a and a second, opposing,surface 506 b. Thesubstrate 506 has aHall effect element 508 diffused into thefirst surface 506 a, or otherwise disposed on thefirst surface 506 a. Aconductive clip 503 having acurrent conductor portion 504 is coupled to theleads 502 a-502 d. Thecurrent conductor portion 504 includes twobumps - The
conductive clip 503 is formed having a bend such that theconductive clip 503 passes up and over thefirst surface 506 a of thesubstrate 506. Thesubstrate 506 is disposed on thelead frame 502 so that theHall effect element 508 is in close proximity to thecurrent conductor portion 504. In the illustrated embodiment, thesubstrate 506 has a conventional mounting orientation with thefirst surface 506 a directed upward. An insulator 514 (also referred to herein as an insulating layer) can insulate thesubstrate 506 from theconductive clip 503. Theinsulator 514 has tworegions insulator 514 can be similar to theinsulator 24 shown inFIG. 1 . - It will be understood that when the
integrated circuit 500 is assembled, thebumps regions layer 514, which are devoid of insulating material. Thebumps current conductor portion 504 and thefirst surface 506 a of thesubstrate 506. In particular, the twobumps first surface 506 a of thesubstrate 506, providing electrical coupling to circuits (not shown) also disposed on thefirst surface 506 a of thesubstrate 506. The electrical coupling and the circuits coupled thereto are discussed below in greater detail in conjunction withFIG. 15 . - While the
conductive clip 503 having thecurrent conductor portion 504, which includes thebumps 540 a, 504 b is shown, it will be appreciated that, in other arrangements, other current conductor portions, for example, a straight current conductor portion, which includes two features or bumps can also be used. - While only the one
current conductor portion 504 is shown, it should be understood that a second current conductor portion can also be used. The second current conductor portion can be the same as or similar to the secondcurrent conductor portion 304 b ofFIG. 10 , and can be similarly disposed upon thefirst surface 506 a of thesubstrate 506 or upon theinsulator 514. - Referring now to
FIG. 14A , in which like elements ofFIG. 14 are shown having like reference designations, thecurrent conductor portion 504 includes thebump 504 a, which couples thecurrent conductor portion 504 through theregion 514 a of the insulatinglayer 514 to thesubstrate 506. - The
Hall effect element 508 is disposed in or on thesurface 506 a of thesubstrate 506.Other circuitry 530, electrically coupled to thebump 504 a can also be disposed in or on thesurface 506 a of thesubstrate 506.Exemplary circuitry 530 is described below in conjunction withFIG. 15 . - In other embodiments, a
wire bond 532 or the like, here shown as a phantom line to indicate that it is an alternative arrangement to thebump 504 a, can be used to couple thecurrent conductor portion 504 through theregion 514 a of the insulatinglayer 514 to thefirst surface 506 a of thesubstrate 506. It will be understood that a second wire bond (not shown) can be used in place of theother bump 504 b ofFIG. 14 . While thewire bond 532 appears to terminate to thesubstrate 506 under thecurrent conductor portion 506, it will be appreciated that the termination can be to the side of thecurrent conductor portion 506. - Referring now to
FIG. 15 ,exemplary circuitry 550 can be the same as or similar to thecircuitry 480 used in thecurrent sensor 450 ofFIG. 13A or thecircuitry 530 used in thecurrent sensor 500 ofFIG. 14A . Thecircuitry 550 can be coupled to aHall effect element 552. TheHall effect element 552 can be the same as or similar to theHall effect element 458 ofFIGS. 13 and 13 A, or theHall effect element 508 ofFIGS. 14 and 14 A. - The
Hall effect element 552 is coupled to acurrent sensing circuit 554, which includes a dynamic offsetcancellation circuit 553. The dynamic offsetcancellation circuit 553 provides a DC offset adjustment for DC voltage errors associated with theHall effect element 552. - The dynamic offset
cancellation circuit 553 is coupled to anamplifier 556 that amplifies the offset adjusted Hall output signal. Theamplifier 556 is coupled to afilter 558 that can be a low pass filter, a high pass filter, a band pass filter, and/or a notch filter. Thefilter 558 is selected in accordance with a variety of factors including, but not limited to, a desired response time, and a frequency spectrum of noise associated with theHall effect element 552, the dynamic offsetcancellation circuit 553, and theamplifier 556. In one particular embodiment, thefilter 558 is a low pass filter. Thefilter 558 is coupled to anoutput driver 560 that provides a currentsensor output signal 571 at anode 572 for transmission to other electronics (not shown). As described more fully below, the current sensor output signal is indicative of a magnitude of a current passing though a conductor. - A
trim control circuit 564 is coupled tonode 570. Thenode 570 can receive a trim signal that permits various current sensor parameters to be trimmed, typically during manufacture. To this end, thetrim control circuit 564 includes one or more counters enabled by an appropriate signal applied to thenode 570. - The
trim control circuit 564 is coupled to a quiescent output voltage (Qvo)circuit 562. The quiescent output voltage is the voltage of theoutput signal 571 when the current sensed by theHall effect element 552 is zero. Nominally, for a unipolar supply voltage, Qvo is equal to Vcc/2. Qvo can be trimmed by applying a suitable trim signal through thenode 570 to a first trim control circuit counter within thetrim control circuit 564, which, in turn, controls a digital-to-analog converter (DAC) within theQvo circuit 562. - The
trim control circuit 564 is further coupled to asensitivity adjustment circuit 566. Thesensitivity adjustment circuit 566 permits adjustment of the gain of theamplifier 556 in order to adjust the sensitivity of thecurrent sensor 550. The sensitivity can be trimmed by applying a suitable trim signal through thenode 570 to a second trim control circuit counter within thetrim control circuit 564, which, in turn, controls a DAC within thesensitivity adjustment circuit 566. - The
trim control circuit 564 is further coupled to a sensitivitytemperature compensation circuit 568. The sensitivitytemperature compensation circuit 568 permits adjustment of the gain of theamplifier 556 in order to compensate for gain variations due to temperature. The sensitivitytemperature compensation circuit 568 can be trimmed by applying a suitable trim signal through thenode 570 to a third trim control circuit counter within thetrim control circuit 564, which, in turn, controls a DAC within the sensitivitytemperature compensation circuit 568. - The
Hall effect element 552 is placed in proximity to acurrent conductor portion 604, here shown to be apart from theHall effect element 552 for clarity. Thecurrent conductor portion 604 can be the same as or similar to thecurrent conductor portion 454 ofFIGS. 13 and 13 A and thecurrent conductor portion 504 ofFIGS. 14 and 14 A, formed by a coupling of integrated circuit leads. In operation, a current 584 enters anode 574 of thecurrent sensor 550, passes through thecurrent conductor portion 604 and out anode 576, where it passes though aswitch 580 and through aload 586, both of which can be external to theintegrated circuit 550. Theswitch 580 can be, for example, a relay or a field effect transistor (FET). - It would be desirable to stop the current 584 upon detection of an overcurrent condition, for example a short circuit, which would otherwise result in an undesirably high current 584, which could damage the
integrated circuit 550 or other associated circuitry. To this end, anovercurrent circuit 590 can detect the overcurrent condition. - The
overcurrent circuit 590 includes acomparator 591 coupled to receive the currentsensor output signal 571 and also coupled to avoltage reference 592. Anoutput 593 of thecomparator 591 is coupled to alogic gate 594. Thelogic gate 594 is coupled to a gate driver, which generates acontrol signal 597 at anode 578 of thecircuitry 550. Thenode 578 is coupled to a control node of theswitch 580 and is operable to open theswitch 580, stopping the current 584, in response to detection of the overcurrent condition by theHall effect element 552. - The
logic gate 594 is also coupled to afault circuit 598, which generates afault output signal 599 at anode 588 of theintegrated circuit 550. Thefault output signal 599 is indicative of the overcurrent condition, i.e., the current 584 being above a predetermined current. - It will be recognized that the
amplifier 591 and thevoltage reference 592 are responsive to the currentsensor output signal 571, which is responsive to signals generated by theHall effect element 552. It will be appreciated that theHall effect element 552 has a relatively slow response time. Therefore, if theswitch 580 were controlled only in the fashion described above in response to signals generated by theHall effect element 552, some rapid overcurrent conditions might damage theintegrated circuit 550 or theload 586 before theswitch 580 could be opened. Circuitry described below can provide a faster response time to the overcurrent condition. - A
comparator 600 and avoltage reference 602 are coupled to thecurrent conductor portion 604 of theintegrated circuit 550. As described above, thecurrent conductor portion 604 can be the same as or similar to thecurrent conductor portion 454 ofFIGS. 13 and 13 A and thecurrent conductor portion 504 ofFIGS. 14 and 14 A, formed by a coupling of integrated circuit leads. The coupling from thecurrent conductor portion 604 to thevoltage reference 602 and to thecomparator 600 can be provided in a variety of ways, including but not limited to, thebumps FIGS. 13 and 13 A and thebumps FIGS. 14 and 14 A. - In operation, since the
current conductor portion 604 has an associated resistance, a voltage appears across thecurrent conductor portion 604 in response to the current 584. When the current 584 is sufficiently large, anoutput signal 601 of thecomparator 600 changes state, causing thecontrol signal 597 to change state, opening theswitch 580 and stopping the current. Opening theswitch 580 in this manner occurs more rapidly than if theswitch 580 were to be opened only by thecomparator 591 in response to signals generated by theHall effect element 592. - It will be appreciated by those of ordinary skill in the art that the
circuitry 550 shown inFIG. 15 is illustrative of exemplary circuitry that may be associated with and integrated into a current sensor, like thecurrent sensor 450 ofFIGS. 13 and 13 A and thecurrent sensor 500 ofFIGS. 14 and 14 A. - It will also be appreciated that, in other embodiments, the
switch 580 can be integrated into thecurrent sensor circuitry 550. - Referring now to
FIG. 16 , another exemplarycurrent sensor 650 is like the current sensor of 500 ofFIG. 14 , however, thecurrent sensor 650 includes asecond substrate 655 described more fully below. Thecurrent sensor 650 includes alead frame 652 having a plurality ofleads 552 a-552 h. Thecurrent sensor 650 also includes asubstrate 656 having afirst surface 656 a and a second, opposing,surface 656 b. Aconductive clip 654 having acurrent conductor portion 655 is coupled to theleads 652 a-652 d. The current conductor portion 605 includes twobumps second substrate 666, having a magnetic field sensing element disposed thereon, for example, a magnetoresistance element (not shown), can be disposed upon thecurrent conductor portion 655. The magnetic field sensing element on thesecond substrate 666 can be coupled to thefirst surface 656 a of thesubstrate 656 withwire bonds - The
conductive clip 654 is formed having a bend such that theconductive clip 654 passes up and over thefirst surface 656 a of thesubstrate 656. In the illustrated embodiment, thesubstrate 656 has a conventional mounting orientation with thefirst surface 656 a directed upward. An insulator 664 (also referred to herein as an insulating layer) can insulate thesubstrate 656 from theconductive clip 654. Theinsulator 664 has tworegions insulator 664 can be similar to theinsulator 24 shown inFIG. 1 . - Shown in assembled form, the
bumps regions layer 664, which are devoid of insulating material. Thebumps current conductor portion 655 and thefirst surface 656 a of thesubstrate 656. In particular, the twobumps first surface 656 a of thesubstrate 656, providing electrical coupling to circuits (not shown) also disposed on thefirst surface 656 a of thesubstrate 656. The electrical coupling and the circuits coupled thereto are discussed above in greater detail in conjunction withFIG. 15 . - While the
conductive clip 654 having thecurrent conductor portion 655, which includes thebumps - While only the one
current conductor portion 655 is shown, it should be understood that a second current conductor portion can also be used. The second current conductor portion can be the same as or similar to the secondcurrent conductor portion 304 b ofFIG. 10 , and can be similarly disposed upon thefirst surface 656 a of thesubstrate 656 or upon theinsulator 664. - The
current sensor 650 has twosubstrate current sensor 650 shows but one arrangement that can provide two substrates, while also providing a current carrying conductor, e.g., 655, in close proximity to a magnetic field sensing element, and/or while including an overcurrent circuit as described above in conjunction withFIG. 15 . Other two substrate arrangements are described in U.S. patent application Ser. No. ______, entitled “Arrangements for an Integrated Sensor,” having attorney docket number ALLEG-162PUS, having inventors Michael C. Doogue, Vijay Mangtani, and William P. Taylor, filed on Jan. 20, 2006, which application is incorporated by reference herein in its entirety. Any of the arrangements described therein can be combined with a current carry conductor and/or with an overcurrent circuit. - The
current sensor 450 ofFIGS. 13 and 13 A, thecurrent sensor 500 ofFIGS. 14 and 14 A, thecurrent sensor 550 ofFIG. 15 , and thecurrent sensor 650 ofFIG. 16 , and are shown having couplings betweencurrent conductor portions circuitry 590 ofFIG. 15 . However, in other embodiments, other current sensors similar to thecurrent sensors current conductor portions current sensor 550 ofFIG. 15 , thecurrent conductor portion 604 ofFIG. 15 does not couple to thenodes FIG. 15 . In these embodiments, the overcurrent circuitry 590 (FIG. 15 ), remains coupled to thenodes nodes current sensor 550. For example, in some arrangements, thenodes FIG. 15 ). With these arrangements, theovercurrent circuit 590 is able to sense a voltage drop resulting from current passing though the circuit trace, providing essentially the same effect, wherein theovercurrent circuit 590 provides similar functions to those described above. - Having described preferred embodiments of the invention, it will now become apparent to one of ordinary skill in the art that other embodiments incorporating their concepts may be used. It is felt therefore that these embodiments should not be limited to disclosed embodiments, but rather should be limited only by the spirit and scope of the appended claims. All references cited herein are hereby incorporated herein by reference in their entirety.
Claims (28)
Priority Applications (18)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/336,602 US7075287B1 (en) | 2003-08-26 | 2006-01-20 | Current sensor |
US11/401,160 US7476816B2 (en) | 2003-08-26 | 2006-04-10 | Current sensor |
US11/383,021 US20060219436A1 (en) | 2003-08-26 | 2006-05-12 | Current sensor |
EP06770974A EP1891452B1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
JP2008513632A JP5468776B2 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
KR1020077028301A KR101231830B1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
PCT/US2006/019953 WO2006130393A1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
EP09000123.1A EP2157436B1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
AT06770974T ATE443266T1 (en) | 2005-05-27 | 2006-05-23 | CURRENT SENSOR |
EP09000121A EP2163908B1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
EP10183958.7A EP2295993B1 (en) | 2005-05-27 | 2006-05-23 | Current Sensor |
DE602006009256T DE602006009256D1 (en) | 2005-05-27 | 2006-05-23 | CURRENT SENSOR |
EP09000122.3A EP2402770B1 (en) | 2005-05-27 | 2006-05-23 | Current sensor |
US12/171,651 US7598601B2 (en) | 2003-08-26 | 2008-07-11 | Current sensor |
JP2010281774A JP5255046B2 (en) | 2005-05-27 | 2010-12-17 | Current sensor |
JP2010281804A JP5248587B2 (en) | 2005-05-27 | 2010-12-17 | Current sensor |
JP2010281841A JP5248588B2 (en) | 2005-05-27 | 2010-12-17 | Current sensor |
JP2010281828A JP4904427B2 (en) | 2005-05-27 | 2010-12-17 | Current sensor |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/649,450 US7709754B2 (en) | 2003-08-26 | 2003-08-26 | Current sensor |
US11/140,250 US6995315B2 (en) | 2003-08-26 | 2005-05-27 | Current sensor |
US11/144,970 US7166807B2 (en) | 2003-08-26 | 2005-06-03 | Current sensor |
US11/336,602 US7075287B1 (en) | 2003-08-26 | 2006-01-20 | Current sensor |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/144,970 Continuation-In-Part US7166807B2 (en) | 2003-08-26 | 2005-06-03 | Current sensor |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/401,160 Continuation-In-Part US7476816B2 (en) | 2003-08-26 | 2006-04-10 | Current sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
US7075287B1 US7075287B1 (en) | 2006-07-11 |
US20060152210A1 true US20060152210A1 (en) | 2006-07-13 |
Family
ID=36659887
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/336,602 Expired - Lifetime US7075287B1 (en) | 2003-08-26 | 2006-01-20 | Current sensor |
Country Status (1)
Country | Link |
---|---|
US (1) | US7075287B1 (en) |
Cited By (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2026082A2 (en) | 2007-08-14 | 2009-02-18 | Honeywell International Inc. | Double sided integrated processing and sensing chip |
US20090058412A1 (en) * | 2006-05-12 | 2009-03-05 | Taylor William P | Integrated Current Sensor |
US20100001715A1 (en) * | 2008-07-03 | 2010-01-07 | Doogue Michael C | Folding current sensor |
US20100188078A1 (en) * | 2009-01-28 | 2010-07-29 | Andrea Foletto | Magnetic sensor with concentrator for increased sensing range |
US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
WO2013142112A1 (en) * | 2012-03-20 | 2013-09-26 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
WO2014105318A3 (en) * | 2012-12-28 | 2014-09-18 | Allegro Microsystems, Llc | Sensor having fault detection and self test functionality |
GB2533570A (en) * | 2014-12-19 | 2016-06-29 | Hall Element Devices Ltd | Apparatus for measure of quantity and associated method of manufacturing |
CH710644A1 (en) * | 2015-01-22 | 2016-07-29 | Melexis Tech Sa | A process for the production of current sensors. |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US9739846B2 (en) | 2014-10-03 | 2017-08-22 | Allegro Microsystems, Llc | Magnetic field sensors with self test |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US9910088B2 (en) | 2013-12-26 | 2018-03-06 | Allegro Microsystems, Llc | Methods and apparatus for sensor diagnostics including programmable self-test signals |
EP3032268B1 (en) * | 2014-12-09 | 2018-03-28 | Rohm Co., Ltd. | An integrated circuit with an on chip hall sensor |
EP3367110A1 (en) * | 2017-02-24 | 2018-08-29 | Monolithic Power Systems, Inc. | Current sensing system and current sensing method |
US10114044B2 (en) | 2016-08-08 | 2018-10-30 | Allegro Microsystems, Llc | Current sensor |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US10247758B2 (en) | 2016-08-08 | 2019-04-02 | Allegro Microsystems, Llc | Current sensor |
US10921391B2 (en) | 2018-08-06 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor with spacer |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
US11194004B2 (en) | 2020-02-12 | 2021-12-07 | Allegro Microsystems, Llc | Diagnostic circuits and methods for sensor test circuits |
EP4152012A3 (en) * | 2013-03-15 | 2023-06-21 | Allegro MicroSystems, LLC | Packaging for an electronic circuit |
Families Citing this family (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US20060219436A1 (en) * | 2003-08-26 | 2006-10-05 | Taylor William P | Current sensor |
US7709754B2 (en) * | 2003-08-26 | 2010-05-04 | Allegro Microsystems, Inc. | Current sensor |
US7476816B2 (en) * | 2003-08-26 | 2009-01-13 | Allegro Microsystems, Inc. | Current sensor |
US7768083B2 (en) * | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7687882B2 (en) * | 2006-04-14 | 2010-03-30 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having multiple dies with at least one on chip capacitor |
US7573112B2 (en) * | 2006-04-14 | 2009-08-11 | Allegro Microsystems, Inc. | Methods and apparatus for sensor having capacitor on chip |
US20080013298A1 (en) | 2006-07-14 | 2008-01-17 | Nirmal Sharma | Methods and apparatus for passive attachment of components for integrated circuits |
US7816905B2 (en) | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
US8093670B2 (en) * | 2008-07-24 | 2012-01-10 | Allegro Microsystems, Inc. | Methods and apparatus for integrated circuit having on chip capacitor with eddy current reductions |
US20100052424A1 (en) * | 2008-08-26 | 2010-03-04 | Taylor William P | Methods and apparatus for integrated circuit having integrated energy storage device |
US9222992B2 (en) | 2008-12-18 | 2015-12-29 | Infineon Technologies Ag | Magnetic field current sensors |
US8717016B2 (en) | 2010-02-24 | 2014-05-06 | Infineon Technologies Ag | Current sensors and methods |
US8760149B2 (en) | 2010-04-08 | 2014-06-24 | Infineon Technologies Ag | Magnetic field current sensors |
US8680843B2 (en) | 2010-06-10 | 2014-03-25 | Infineon Technologies Ag | Magnetic field current sensors |
US8283742B2 (en) | 2010-08-31 | 2012-10-09 | Infineon Technologies, A.G. | Thin-wafer current sensors |
US9476915B2 (en) | 2010-12-09 | 2016-10-25 | Infineon Technologies Ag | Magnetic field current sensors |
US8975889B2 (en) | 2011-01-24 | 2015-03-10 | Infineon Technologies Ag | Current difference sensors, systems and methods |
US8963536B2 (en) | 2011-04-14 | 2015-02-24 | Infineon Technologies Ag | Current sensors, systems and methods for sensing current in a conductor |
US8604777B2 (en) | 2011-07-13 | 2013-12-10 | Allegro Microsystems, Llc | Current sensor with calibration for a current divider configuration |
US8907437B2 (en) | 2011-07-22 | 2014-12-09 | Allegro Microsystems, Llc | Reinforced isolation for current sensor with magnetic field transducer |
US10345343B2 (en) | 2013-03-15 | 2019-07-09 | Allegro Microsystems, Llc | Current sensor isolation |
US9470765B1 (en) | 2015-08-07 | 2016-10-18 | Allegro Microsystems, Llc | Magnetic sensor having enhanced linearization by applied field angle rotation |
US10411498B2 (en) | 2015-10-21 | 2019-09-10 | Allegro Microsystems, Llc | Apparatus and methods for extending sensor integrated circuit operation through a power disturbance |
US9810721B2 (en) | 2015-12-23 | 2017-11-07 | Melexis Technologies Sa | Method of making a current sensor and current sensor |
US10481181B2 (en) | 2017-04-25 | 2019-11-19 | Allegro Microsystems, Llc | Systems and methods for current sensing |
US10557873B2 (en) | 2017-07-19 | 2020-02-11 | Allegro Microsystems, Llc | Systems and methods for closed loop current sensing |
US10641802B2 (en) | 2018-03-22 | 2020-05-05 | Allegro Microsystems, Llc | Current fault detection systems and methods for a current sensor |
US10978897B2 (en) | 2018-04-02 | 2021-04-13 | Allegro Microsystems, Llc | Systems and methods for suppressing undesirable voltage supply artifacts |
US10718794B2 (en) | 2018-06-20 | 2020-07-21 | Allegro Microsystems, Llc | Current sensor with power calculation |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
US10644659B2 (en) | 2018-08-24 | 2020-05-05 | Allegro Microsystems, Llc | Voltage buffer for input voltages above a supply voltage or below ground voltage |
US11073572B2 (en) * | 2019-01-17 | 2021-07-27 | Infineon Technologies Ag | Current sensor device with a routable molded lead frame |
US11289406B2 (en) | 2019-09-18 | 2022-03-29 | Allegro Microsystems, Llc | Signal isolator having enhanced creepage characteristics |
US11169223B2 (en) | 2020-03-23 | 2021-11-09 | Allegro Microsystems, Llc | Hall element signal calibrating in angle sensor |
US11800813B2 (en) | 2020-05-29 | 2023-10-24 | Allegro Microsystems, Llc | High isolation current sensor |
EP3943952A1 (en) * | 2020-07-24 | 2022-01-26 | LEM International SA | Current transducer |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
US11630130B2 (en) | 2021-03-31 | 2023-04-18 | Allegro Microsystems, Llc | Channel sensitivity matching |
US11768229B2 (en) | 2021-08-23 | 2023-09-26 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
US12163983B2 (en) | 2021-08-23 | 2024-12-10 | Allegro Microsystems, Llc | Packaged current sensor integrated circuit |
US11892476B2 (en) | 2022-02-15 | 2024-02-06 | Allegro Microsystems, Llc | Current sensor package |
US12112865B2 (en) | 2022-03-15 | 2024-10-08 | Allegro Microsystems, Llc | Multiple branch bus bar for coreless current sensing application |
US11768230B1 (en) | 2022-03-30 | 2023-09-26 | Allegro Microsystems, Llc | Current sensor integrated circuit with a dual gauge lead frame |
US11994541B2 (en) | 2022-04-15 | 2024-05-28 | Allegro Microsystems, Llc | Current sensor assemblies for low currents |
US11770322B1 (en) * | 2022-04-29 | 2023-09-26 | Allegro Microsystems, Llc | Electronic circuit to communicate information as an electrical current on two wires such that the electrical current is stabilized by measuring a voltage on a transistor within the electronic circuit |
Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4893073A (en) * | 1989-01-30 | 1990-01-09 | General Motors Corporation | Electric circuit board current sensor |
US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
US5247202A (en) * | 1991-10-09 | 1993-09-21 | Landis & Gyr Betriebs Ag | Plurality of arrangements each including an ic magnetic field sensor and two ferromagnetic field concentrators, and a procedure for incorporating each arrangement into a package |
US6252389B1 (en) * | 1998-03-18 | 2001-06-26 | Mitsubishi Denki Kabushiki Kaisha | Current detector having magnetic core for concentrating a magnetic flux near a hall-effect sensor, and power switch apparatus incorporating same |
US6356068B1 (en) * | 1997-09-15 | 2002-03-12 | Ams International Ag | Current monitor system and a method for manufacturing it |
US20020041179A1 (en) * | 2000-08-28 | 2002-04-11 | Yazaki Corporation | Current detection device, method for detecting electric current and power supply system using the same |
US6462531B1 (en) * | 1999-12-09 | 2002-10-08 | Sanken Electric Co., Ltd. | Current detector having a hall-effect device |
US6683448B1 (en) * | 1999-12-20 | 2004-01-27 | Sanken Electric Co., Ltd. | Large current detector having a hall-effect device |
US20040056647A1 (en) * | 2002-09-20 | 2004-03-25 | Jason Stauth | Integrated current sensor |
US6727683B2 (en) * | 2001-07-06 | 2004-04-27 | Sanken Electric Co., Ltd. | Hall-effect current detector |
US20040080308A1 (en) * | 2002-10-28 | 2004-04-29 | Hirokazu Goto | Electric current detector with hall effect sensor |
US20040263148A1 (en) * | 2003-06-27 | 2004-12-30 | Naritomo Takabatake | Current sensor |
US20050045359A1 (en) * | 2003-08-26 | 2005-03-03 | Michael Doogue | Current sensor |
US20050224248A1 (en) * | 2003-08-26 | 2005-10-13 | Allegro Microsystems, Inc. | Current sensor |
US20050248336A1 (en) * | 2003-08-26 | 2005-11-10 | Nirmal Sharma | Current sensor |
US20060002147A1 (en) * | 2004-06-23 | 2006-01-05 | Lg.Philips Lcd Co. Ltd. | Backlight unit and liquid crystal display device using the same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6171649A (en) | 1984-09-17 | 1986-04-12 | Seiko Instr & Electronics Ltd | Ic package |
JPH04364472A (en) | 1991-06-12 | 1992-12-16 | Fuji Electric Co Ltd | Magnetoelectric conversion device |
JP3852554B2 (en) | 1999-12-09 | 2006-11-29 | サンケン電気株式会社 | Current detection device with Hall element |
-
2006
- 2006-01-20 US US11/336,602 patent/US7075287B1/en not_active Expired - Lifetime
Patent Citations (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5041780A (en) * | 1988-09-13 | 1991-08-20 | California Institute Of Technology | Integrable current sensors |
US4893073A (en) * | 1989-01-30 | 1990-01-09 | General Motors Corporation | Electric circuit board current sensor |
US5247202A (en) * | 1991-10-09 | 1993-09-21 | Landis & Gyr Betriebs Ag | Plurality of arrangements each including an ic magnetic field sensor and two ferromagnetic field concentrators, and a procedure for incorporating each arrangement into a package |
US6356068B1 (en) * | 1997-09-15 | 2002-03-12 | Ams International Ag | Current monitor system and a method for manufacturing it |
US6252389B1 (en) * | 1998-03-18 | 2001-06-26 | Mitsubishi Denki Kabushiki Kaisha | Current detector having magnetic core for concentrating a magnetic flux near a hall-effect sensor, and power switch apparatus incorporating same |
US6462531B1 (en) * | 1999-12-09 | 2002-10-08 | Sanken Electric Co., Ltd. | Current detector having a hall-effect device |
US6683448B1 (en) * | 1999-12-20 | 2004-01-27 | Sanken Electric Co., Ltd. | Large current detector having a hall-effect device |
US20020041179A1 (en) * | 2000-08-28 | 2002-04-11 | Yazaki Corporation | Current detection device, method for detecting electric current and power supply system using the same |
US6727683B2 (en) * | 2001-07-06 | 2004-04-27 | Sanken Electric Co., Ltd. | Hall-effect current detector |
US20040056647A1 (en) * | 2002-09-20 | 2004-03-25 | Jason Stauth | Integrated current sensor |
US20040080308A1 (en) * | 2002-10-28 | 2004-04-29 | Hirokazu Goto | Electric current detector with hall effect sensor |
US20040263148A1 (en) * | 2003-06-27 | 2004-12-30 | Naritomo Takabatake | Current sensor |
US20050045359A1 (en) * | 2003-08-26 | 2005-03-03 | Michael Doogue | Current sensor |
US20050224248A1 (en) * | 2003-08-26 | 2005-10-13 | Allegro Microsystems, Inc. | Current sensor |
US20050248336A1 (en) * | 2003-08-26 | 2005-11-10 | Nirmal Sharma | Current sensor |
US20060002147A1 (en) * | 2004-06-23 | 2006-01-05 | Lg.Philips Lcd Co. Ltd. | Backlight unit and liquid crystal display device using the same |
Cited By (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090058412A1 (en) * | 2006-05-12 | 2009-03-05 | Taylor William P | Integrated Current Sensor |
US8080994B2 (en) * | 2006-05-12 | 2011-12-20 | Allegro Microsystems, Inc. | Integrated current sensor |
EP2026082A2 (en) | 2007-08-14 | 2009-02-18 | Honeywell International Inc. | Double sided integrated processing and sensing chip |
US20090045475A1 (en) * | 2007-08-14 | 2009-02-19 | Honeywell International Inc. | Double sided integrated processing and sensing chip |
EP2026082A3 (en) * | 2007-08-14 | 2009-03-04 | Honeywell International Inc. | Double sided integrated processing and sensing chip |
US20100001715A1 (en) * | 2008-07-03 | 2010-01-07 | Doogue Michael C | Folding current sensor |
US7936164B2 (en) | 2008-07-03 | 2011-05-03 | Allegro Microsystems, Inc. | Folding current sensor |
US20100188078A1 (en) * | 2009-01-28 | 2010-07-29 | Andrea Foletto | Magnetic sensor with concentrator for increased sensing range |
US20110133732A1 (en) * | 2009-12-03 | 2011-06-09 | Allegro Microsystems, Inc. | Methods and apparatus for enhanced frequency response of magnetic sensors |
US9620705B2 (en) | 2012-01-16 | 2017-04-11 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US9299915B2 (en) | 2012-01-16 | 2016-03-29 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US8629539B2 (en) | 2012-01-16 | 2014-01-14 | Allegro Microsystems, Llc | Methods and apparatus for magnetic sensor having non-conductive die paddle |
US10333055B2 (en) | 2012-01-16 | 2019-06-25 | Allegro Microsystems, Llc | Methods for magnetic sensor having non-conductive die paddle |
US9494660B2 (en) | 2012-03-20 | 2016-11-15 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
WO2013142112A1 (en) * | 2012-03-20 | 2013-09-26 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US10234513B2 (en) | 2012-03-20 | 2019-03-19 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
CN104204833A (en) * | 2012-03-20 | 2014-12-10 | 阿莱戈微系统有限责任公司 | Integrated circuit package having a split lead frame |
US11677032B2 (en) | 2012-03-20 | 2023-06-13 | Allegro Microsystems, Llc | Sensor integrated circuit with integrated coil and element in central region of mold material |
US10230006B2 (en) | 2012-03-20 | 2019-03-12 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with an electromagnetic suppressor |
US11828819B2 (en) | 2012-03-20 | 2023-11-28 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US11444209B2 (en) | 2012-03-20 | 2022-09-13 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with an integrated coil enclosed with a semiconductor die by a mold material |
US9666788B2 (en) | 2012-03-20 | 2017-05-30 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame |
US11961920B2 (en) | 2012-03-20 | 2024-04-16 | Allegro Microsystems, Llc | Integrated circuit package with magnet having a channel |
US9812588B2 (en) | 2012-03-20 | 2017-11-07 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with integral ferromagnetic material |
US10916665B2 (en) | 2012-03-20 | 2021-02-09 | Allegro Microsystems, Llc | Magnetic field sensor integrated circuit with an integrated coil |
WO2014105318A3 (en) * | 2012-12-28 | 2014-09-18 | Allegro Microsystems, Llc | Sensor having fault detection and self test functionality |
US9383425B2 (en) | 2012-12-28 | 2016-07-05 | Allegro Microsystems, Llc | Methods and apparatus for a current sensor having fault detection and self test functionality |
EP4152012A3 (en) * | 2013-03-15 | 2023-06-21 | Allegro MicroSystems, LLC | Packaging for an electronic circuit |
US9411025B2 (en) | 2013-04-26 | 2016-08-09 | Allegro Microsystems, Llc | Integrated circuit package having a split lead frame and a magnet |
US9910088B2 (en) | 2013-12-26 | 2018-03-06 | Allegro Microsystems, Llc | Methods and apparatus for sensor diagnostics including programmable self-test signals |
US9739846B2 (en) | 2014-10-03 | 2017-08-22 | Allegro Microsystems, Llc | Magnetic field sensors with self test |
EP3032268B1 (en) * | 2014-12-09 | 2018-03-28 | Rohm Co., Ltd. | An integrated circuit with an on chip hall sensor |
US10830797B2 (en) | 2014-12-19 | 2020-11-10 | Hall Element Devices (Ip Holdings) Limited | Apparatus for measure of quantity and associated method of manufacturing |
AU2015365620B2 (en) * | 2014-12-19 | 2021-02-18 | Hall Element Devices (Ip Holdings) Limited | Apparatus for measure of quantity and associated method of manufacturing |
GB2533570A (en) * | 2014-12-19 | 2016-06-29 | Hall Element Devices Ltd | Apparatus for measure of quantity and associated method of manufacturing |
US9570672B2 (en) | 2015-01-22 | 2017-02-14 | Melexis Technologies Sa | Method of making current sensors |
CH710644A1 (en) * | 2015-01-22 | 2016-07-29 | Melexis Tech Sa | A process for the production of current sensors. |
US10114044B2 (en) | 2016-08-08 | 2018-10-30 | Allegro Microsystems, Llc | Current sensor |
US10247758B2 (en) | 2016-08-08 | 2019-04-02 | Allegro Microsystems, Llc | Current sensor |
EP3367110A1 (en) * | 2017-02-24 | 2018-08-29 | Monolithic Power Systems, Inc. | Current sensing system and current sensing method |
US10921391B2 (en) | 2018-08-06 | 2021-02-16 | Allegro Microsystems, Llc | Magnetic field sensor with spacer |
US10991644B2 (en) | 2019-08-22 | 2021-04-27 | Allegro Microsystems, Llc | Integrated circuit package having a low profile |
US11194004B2 (en) | 2020-02-12 | 2021-12-07 | Allegro Microsystems, Llc | Diagnostic circuits and methods for sensor test circuits |
Also Published As
Publication number | Publication date |
---|---|
US7075287B1 (en) | 2006-07-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7075287B1 (en) | Current sensor | |
US7476816B2 (en) | Current sensor | |
US7598601B2 (en) | Current sensor | |
US7166807B2 (en) | Current sensor | |
US6995315B2 (en) | Current sensor | |
US7709754B2 (en) | Current sensor | |
US10753963B2 (en) | Current sensor isolation | |
US10069063B2 (en) | Integrated circuit having first and second magnetic field sensing elements | |
JP4904427B2 (en) | Current sensor | |
JP2011069837A5 (en) | ||
JP2011075576A5 (en) |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ALLEGRO MICROSYSTEMS, INC., MASSACHUSETTS Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:MANGTANI, VIJAY;DOOGUE, MICHAEL C.;TAYLOR, WILLIAM P.;REEL/FRAME:017501/0154 Effective date: 20060119 |
|
STCF | Information on status: patent grant |
Free format text: PATENTED CASE |
|
CC | Certificate of correction | ||
FPAY | Fee payment |
Year of fee payment: 4 |
|
AS | Assignment |
Owner name: ALLEGRO MICROSYSTEMS, LLC, MASSACHUSETTS Free format text: CONVERSION AND NAME CHANGE;ASSIGNOR:ALLEGRO MICROSYSTEMS, INC.;REEL/FRAME:030426/0178 Effective date: 20130321 |
|
FPAY | Fee payment |
Year of fee payment: 8 |
|
FPAY | Fee payment |
Year of fee payment: 12 |
|
AS | Assignment |
Owner name: MIZUHO BANK LTD., AS COLLATERAL AGENT, NEW YORK Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ALLEGRO MICROSYSTEMS, LLC;REEL/FRAME:053957/0620 Effective date: 20200930 Owner name: CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH, AS COLLATERAL AGENT, NEW YORK Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ALLEGRO MICROSYSTEMS, LLC;REEL/FRAME:053957/0874 Effective date: 20200930 |
|
AS | Assignment |
Owner name: MORGAN STANLEY SENIOR FUNDING, INC., AS THE COLLATERAL AGENT, MARYLAND Free format text: PATENT SECURITY AGREEMENT;ASSIGNOR:ALLEGRO MICROSYSTEMS, LLC;REEL/FRAME:064068/0459 Effective date: 20230621 Owner name: ALLEGRO MICROSYSTEMS, LLC, NEW HAMPSHIRE Free format text: RELEASE OF SECURITY INTEREST IN PATENTS (R/F 053957/0620);ASSIGNOR:MIZUHO BANK, LTD., AS COLLATERAL AGENT;REEL/FRAME:064068/0360 Effective date: 20230621 |
|
AS | Assignment |
Owner name: ALLEGRO MICROSYSTEMS, LLC, NEW HAMPSHIRE Free format text: RELEASE OF SECURITY INTEREST IN PATENTS AT REEL 053957/FRAME 0874;ASSIGNOR:CREDIT SUISSE AG, CAYMAN ISLANDS BRANCH, AS COLLATERAL AGENT;REEL/FRAME:065420/0572 Effective date: 20231031 |