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US20060138076A1 - Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component - Google Patents

Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component Download PDF

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Publication number
US20060138076A1
US20060138076A1 US10/536,890 US53689005A US2006138076A1 US 20060138076 A1 US20060138076 A1 US 20060138076A1 US 53689005 A US53689005 A US 53689005A US 2006138076 A1 US2006138076 A1 US 2006138076A1
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Prior art keywords
layer
sacrificial layer
deposition
etching
embedding
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US10/536,890
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Philippe Robert
France Michel
Catherine Maeder-Pachurka
Nicolas Sillon
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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Priority to US10/536,890 priority Critical patent/US20060138076A1/en
Priority claimed from PCT/FR2003/003789 external-priority patent/WO2004056698A2/en
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE reassignment COMMISSARIAT A L'ENERGIE ATOMIQUE ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: MAEDER-PACHURKA, CATHERINE, MICHEL, FRANCE, ROBERT, PHILIPPE, SILLON, NICHOLAS
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE reassignment COMMISSARIAT A L'ENERGIE ATOMIQUE RECORD TO CORRECT 4TH ASSIGNOR'S NAME ON AN ASSINGMENT DOCUMENT PREVIOUSLY RECORDED ON JULY 20, 2005 REEL 016548/FRAME 0766 Assignors: MAEDER-PACHURKA, CATHERINE, MICHEL, FRANCE, ROBERT PHILIPPE, SILLON, NICOLAS
Publication of US20060138076A1 publication Critical patent/US20060138076A1/en
Abandoned legal-status Critical Current

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    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00555—Achieving a desired geometry, i.e. controlling etch rates, anisotropy or selectivity
    • B81C1/00611—Processes for the planarisation of structures
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    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
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    • B81B2203/00—Basic microelectromechanical structures
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    • B81C2201/0105—Sacrificial layer
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Definitions

  • the invention relates to a production process of an integrated micro-system type component, comprising a flat suspended micro-structure, using a sacrificial layer of polymer material deposited on a substrate and having side walls confining the flat suspended structure, process successively comprising a planarization step, a deposition step of a formation layer of the suspended structure, an etching step of at least one opening of the formation layer up to the level of the front face of the sacrificial layer and a dry etching step of the sacrificial layer.
  • MEMS micro electro-mechanical systems
  • a layer 2 a is deposited on a substrate 1 .
  • the layer 2 a is typically made of polymer material, silicon oxide or tungsten.
  • a formation layer 3 of the suspended structure is deposited on the substrate 1 and on the sacrificial layer 2 .
  • the formation layer 3 can be conducting or dielectric or formed by a stack of several different layers.
  • the fourth step, represented in FIG. 4 consists in lithographing and etching the formation layer 3 up to the level of the front face of the sacrificial layer, so as to confine the suspended structure 5 by openings 4 in the formation layer 3 .
  • the sacrificial layer is removed by dry etching or wet etching so as to form a free space between the substrate and the suspended structure 5 , thus releasing the suspended structure.
  • the material forming the sacrificial layer is chosen so that etching thereof is selective with respect to the material for achieving the micro-structure.
  • the sacrificial layer can be made of silicon oxide (SiO 2 ) and the suspended structure can be made of polysilicon.
  • a second combination comprises a sacrificial layer made of polymer material and a suspended structure made of SiO 2 .
  • a third possibility consists in using a sacrificial layer of polymer material and a suspended structure made of metal.
  • a sacrificial layer that is removed by wet etching for example SiO 2 in a hydrofluoric acid (HF) based bath, gives rise to sticking problems of the structures in the removal step.
  • HF hydrofluoric acid
  • the geometric shape and cross-sectional profile of the suspended structure has great consequences on buckling or displacement of the suspended structure according to an external excitation (electric, thermal, acceleration, pressure, etc . . . ).
  • the profile of the suspended structure 5 in a plane perpendicular to FIG. 5 , is perfectly defined in the lithography step. Its profile in the plane of FIG. 5 on the other hand depends on the bottom layers, and in particular on the sacrificial layer on which the suspended structure is built. In the case of use of a sacrificial layer of polymer material, the profile is very often greatly accentuated by the creep of the material when annealing is performed. However the exact profile of the suspended structure has repercussions on checking of the system. Ondulations of the micro-structure, caused by the shape of the sacrificial layer, in fact make the stiffness of the final device and its deformation according to the excitation conditions difficult to know.
  • the space comprised between the suspended structure and the substrate is also influenced by the outline.
  • the embedding of the micro-structure depends on the tilt of the suspended structure, which also depends on the profile. Not knowing the exact profile leads to a large discrepancy between simulations and experimental measurements of the device and to risks of stress concentrations at the embeddings and on the mobile structure. Especially, this makes the devices extremely sensitive to process variations.
  • CMP chemical mechanical polishing
  • the object of the invention is to remedy these shortcomings and, more particularly, to provide flat suspended structures using a planarized polymer sacrificial layer.
  • the side walls of the sacrificial layer are confined by etching by means of a mask formed on the front face of a layer made from polymer material by deposition, lithography and etching of a temporary layer, deposition of the embedding layer being performed on the assembly formed by the sacrificial layer and the mask, the mask being eliminated in the course of the planarization step.
  • the process successively comprises, before deposition of the sacrificial layer, deposition on at least one zone of the substrate designed to be covered by the sacrificial layer and comprising salient elements, of a base layer presenting a larger thickness than the thickness of the salient elements, and an additional planarization step, by chemical mechanical polishing, of the base layer, so that the front faces of the base layer and of the salient elements form a common flat surface.
  • the two faces of the formation layer of the suspended structure are totally flat.
  • FIGS. 6 to 11 represent different steps of a particular embodiment of a process according to the invention.
  • the embedding layer 6 must be arranged in such a way as to envelop the sacrificial layer 2 and to prevent lateral displacement of the sacrificial layer 2 .
  • the embedding layer 6 can cover and surround the sacrificial layer 2 totally. It can also only cover a limited strip of the sacrificial layer 2 and extend, at the ends of this strip, onto the adjacent zones of the substrate 1 , on each side of the sacrificial layer 2 .
  • the material of the embedding layer 6 must be a material enabling a planarization process to be used, in particular of the CMP type, for example SiO 2 , silicon nitride or aluminium. As represented in FIG.
  • a component achieved by the process according to the invention comprises a formation layer 3 of the suspended structure 5 presenting two flat faces, the front face and the back face arranged on the embedding layer 6 .
  • the planarization step can comprise chemical mechanical polishing (CMP) and, in particular, consists only in chemical mechanical polishing.
  • CMP chemical mechanical polishing
  • a process of the CMP type consists, in known manner, in holding the object to be planarized against a wetted rotary polishing plate in a polishing bath containing abrasives and an acid or alkaline solution.
  • the abrasives are typically aluminium- or silicon-base particles.
  • the layer to be planarized is thus chemically modified by the liquid and then removed by the particles of the abrasive.
  • Applying a CMP type process directly on the sacrificial layer 2 is liable to damage the sacrificial layer 2 , even in the presence of an embedding layer 6 , in particular by incrustation of residues of the abrasive.
  • initial etching of the sacrificial layer 2 is performed by means of a mask 7 previously formed on the front face of the sacrificial layer 2 by deposition, lithography and etching of a temporary layer ( FIG. 15 ).
  • the temporary layer can be made of dielectric or metal material (for example chromium, aluminium, etc . . . ).
  • the typical thickness of the temporary layer is comprised between 10 and 50 nanometers.
  • the mask 7 enables the side walls 10 of the sacrificial layer 2 to be confined.
  • Deposition of the embedding layer 6 is then performed on the assembly formed by the sacrificial layer 2 and the mask 7 ( FIG. 17 ).
  • the complete planarization step is then performed in two sub-steps.
  • a first planarization sub-step can be performed by a CMP type process, without any risk of damaging the sacrificial layer 2 , because the sacrificial layer 2 is protected by the mask 7 ( FIG. 18 ).
  • a second planarization sub-step consists in eliminating the mask 7 , preferably by dry or wet etching, as represented in FIG. 19 .
  • the fabrication process of the suspended structure can then be continued by the steps represented in FIGS. 9 to 11 , described above.
  • the process for producing the suspended structure can comprise additional steps before deposition of the sacrificial layer 2 .
  • a base layer 9 is deposited on the substrate 1 and on the salient elements 8 so as to completely fill the zones arranged between the salient elements 8 .
  • the base layer 9 presents a larger thickness than the thickness of the salient elements (typically 1.7 times greater).
  • the next step is planarization by chemical mechanical polishing of the base layer 9 so that the front faces of the base layer 9 and of the salient elements 8 form a common flat surface ( FIG. 22 ) able to act as substrate for deposition of the sacrificial layer 2 ( FIG. 23 ). If there is a risk of the salient elements 8 being damaged during the planarization step, planarization of the CPM type is performed followed by etching up to the level of the front face of the salient elements 8 .
  • the process is suitable for any type of sacrificial layer polymer (photosensitive resin, polyimide, PMMA, etc . . . ) and is independent from any treatment of the sacrificial layer polymer (polymer strongly or weakly annealed or even not annealed, annealed in UV, having undergone an ion implantation, etc . . . ).
  • the process enables any geometry of the sacrificial layer to be achieved (narrow, broad, thick, thin, rectangular, round, etc. shape). There are no risks of scratching on the sacrificial layer and the substrate, nor are there any risks of tear-off of the sacrificial layer during the planarization step, the sacrificial layer at no time extending beyond the embedding layer.
  • etching sub-step during the planarization step (FIGS. 12 to 14 ) and/or the use of a temporary layer (mask 7 ) on the sacrificial layer 2 (FIGS. 15 to 19 ) moreover enables any risk of damage of the sacrificial layer 2 by the abrasives to be eliminated.
  • thermal treatment of the sacrificial layer for example when the technological component fabrication steps comprise high temperature steps, i.e. at a higher temperature than the polymer deposition temperature), this will preferably be performed before the polymer etching step to prevent creep of the latter.

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Abstract

Production process of a flat suspended micro-structure using a sacrificial layer of polymer material and component obtained thereby The process successively comprises deposition of a sacrificial layer (2) of polymer material, deposition, on at least a part of the substrate (1) and of the front face of the sacrificial layer (2), of an embedding layer (6), the thickness whereof is larger than that of the sacrificial layer (2), and planarization so that the front faces of the sacrificial layer (2) and of the embedding layer (6) form a common flat surface. A formation layer (3) of a suspended structure (5) is deposited on the front face of the common flat surface. Planarization can comprise chemical mechanical polishing and etching of the embedding layer (6). Etching of the sacrificial layer (2) can be performed by means of a mask formed on the front face of a layer of polymer material eliminated during the planarization step.

Description

    BACKGROUND OF THE INVENTION
  • The invention relates to a production process of an integrated micro-system type component, comprising a flat suspended micro-structure, using a sacrificial layer of polymer material deposited on a substrate and having side walls confining the flat suspended structure, process successively comprising a planarization step, a deposition step of a formation layer of the suspended structure, an etching step of at least one opening of the formation layer up to the level of the front face of the sacrificial layer and a dry etching step of the sacrificial layer.
    • STATE OF THE ART
  • Many integrated micro electro-mechanical systems (MEMS) comprise flat suspended micro-structures. This is for example the case of suspended volume actuators, sensors, switches, variable capacitors, inductors or acoustic wave resonators. In micro-technology or microelectronics, suspended micro-structures are achieved by the use of a sacrificial layer. The conventional steps for obtaining a suspended micro-structure are represented, in simplified form, in FIGS. 1 to 5. In a first step represented in FIG. 1, a layer 2 a is deposited on a substrate 1. The layer 2 a is typically made of polymer material, silicon oxide or tungsten. The second step, represented in FIG. 2, consists in lithographing and etching the layer 2 a so as to form a sacrificial layer 2 covering a part of the substrate 1 whereon the suspended structure has to be formed. Then, in a third step represented in FIG. 3, a formation layer 3 of the suspended structure is deposited on the substrate 1 and on the sacrificial layer 2. The formation layer 3 can be conducting or dielectric or formed by a stack of several different layers. The fourth step, represented in FIG. 4, consists in lithographing and etching the formation layer 3 up to the level of the front face of the sacrificial layer, so as to confine the suspended structure 5 by openings 4 in the formation layer 3. In a fifth step, represented in FIG. 5, the sacrificial layer is removed by dry etching or wet etching so as to form a free space between the substrate and the suspended structure 5, thus releasing the suspended structure.
  • The material forming the sacrificial layer is chosen so that etching thereof is selective with respect to the material for achieving the micro-structure. For example the sacrificial layer can be made of silicon oxide (SiO2) and the suspended structure can be made of polysilicon. A second combination comprises a sacrificial layer made of polymer material and a suspended structure made of SiO2. A third possibility consists in using a sacrificial layer of polymer material and a suspended structure made of metal. The use of a sacrificial layer that is removed by wet etching, for example SiO2 in a hydrofluoric acid (HF) based bath, gives rise to sticking problems of the structures in the removal step. This problem is generally associated with capillarity effects and surface forces. Consequently, a sacrificial layer of polymer material that is easily removed by plasma etching, for example of the oxygen plasma type, is increasingly used. As this etching is performed dry, sticking problems are eliminated.
  • The geometric shape and cross-sectional profile of the suspended structure has great consequences on buckling or displacement of the suspended structure according to an external excitation (electric, thermal, acceleration, pressure, etc . . . ).
  • The profile of the suspended structure 5, in a plane perpendicular to FIG. 5, is perfectly defined in the lithography step. Its profile in the plane of FIG. 5 on the other hand depends on the bottom layers, and in particular on the sacrificial layer on which the suspended structure is built. In the case of use of a sacrificial layer of polymer material, the profile is very often greatly accentuated by the creep of the material when annealing is performed. However the exact profile of the suspended structure has repercussions on checking of the system. Ondulations of the micro-structure, caused by the shape of the sacrificial layer, in fact make the stiffness of the final device and its deformation according to the excitation conditions difficult to know. The space comprised between the suspended structure and the substrate is also influenced by the outline. Moreover, the embedding of the micro-structure depends on the tilt of the suspended structure, which also depends on the profile. Not knowing the exact profile leads to a large discrepancy between simulations and experimental measurements of the device and to risks of stress concentrations at the embeddings and on the mobile structure. Especially, this makes the devices extremely sensitive to process variations.
  • In order to be able to check the profile of the final suspended structure better, it is recommendable to include a sacrificial layer planarization step. However, polymers are materials which are very difficult to planarize. Chemical mechanical polishing (CMP) tests show very mediocre results, for example tear-off of the resin when polishing, irregularity of planarization or incrustation of colloidal silica (contained in the CMP planarization product) in the polymer, then occurring when the sacrificial layer is removed.
  • Other dry planarization tests (planarization on abrasive film) also gave mediocre results. A good rectification of the polymer was obtained, but at the price of a very large number of scratches on the plane of the chip and tear-offs on the polymer pads, as well as incrustation of the abrasive material in the polymer.
  • U.S. Pat. Nos. 6,361,402 and 6,150,274 propose polymer planarization processes. However, these processes do not provide a simple solution. Moreover, these processes are not suitable for all types of polymer (photosensitive resin, polyimide, etc . . . ) and for all the annealing conditions of these polymers. Indeed, in certain cases, the polymer may have to be annealed at a higher temperature than its temperature of use, for example by annealing at 300° C. of a photosensitive resin the temperature of use whereof is conventionally less than 200° C., to enable a plasma enhanced chemical vapor deposition (PECVD) process to be used at 300° C. on the polymer. These thermal treatments may lead to the polymer being denatured and make it almost impossible to planarize. In a general manner, and in particular when they are annealed at high temperature, polymers are very sensitive to tearing and tend to trap the abrasive compounds contained in the planarization products which are deposited under the mobile structure when the removal step is performed.
    • OBJECT OF THE INVENTION
  • The object of the invention is to remedy these shortcomings and, more particularly, to provide flat suspended structures using a planarized polymer sacrificial layer.
  • According to the invention, this object is achieved by the fact that the process comprises, between deposition of the sacrificial layer and the planarization step, a deposition step, on at least a part of the substrate and of the front face of the sacrificial layer, of an embedding layer presenting a larger thickness than the thickness of the sacrificial layer, so that, after the planarization step, the front faces of the sacrificial layer and of the embedding layer form a common flat surface, the formation layer of the suspended structure being deposited on the front face of the common flat surface.
  • According to a preferred embodiment, the planarization step successively comprises a chemical mechanical polishing sub-step of the embedding layer and an etching sub-step of the embedding layer so that the front faces of the sacrificial layer and of the embedding layer form a common flat surface.
  • According to a development of the invention, the side walls of the sacrificial layer are confined by etching by means of a mask formed on the front face of a layer made from polymer material by deposition, lithography and etching of a temporary layer, deposition of the embedding layer being performed on the assembly formed by the sacrificial layer and the mask, the mask being eliminated in the course of the planarization step.
  • According to another development of the invention, the component comprising salient elements on the substrate, the process successively comprises, before deposition of the sacrificial layer, deposition on at least one zone of the substrate designed to be covered by the sacrificial layer and comprising salient elements, of a base layer presenting a larger thickness than the thickness of the salient elements, and an additional planarization step, by chemical mechanical polishing, of the base layer, so that the front faces of the base layer and of the salient elements form a common flat surface.
  • According to a component achieved by a process according to the invention, the two faces of the formation layer of the suspended structure are totally flat.
    • BRIEF DESCRIPTION OF THE DRAWINGS
  • Other advantages and features will become more clearly apparent from the following description of particular embodiments of the invention given as non-restrictive examples only and represented in the accompanying drawings, in which:
  • FIGS. 1 to 5 represent a process, according to the prior art, for achieving a component comprising a suspended structure.
  • FIGS. 6 to 11 represent different steps of a particular embodiment of a process according to the invention.
  • FIGS. 12 to 14 represent steps of another particular embodiment of a process according to the invention.
  • FIGS. 15 to 19 represent steps of a third particular embodiment of a process according to the invention.
  • FIGS. 20 to 23 represent steps of a fourth particular embodiment of a process according to the invention.
    • DESCRIPTION OF PARTICULAR EMBODIMENTS
  • FIG. 6 represents a sacrificial layer 2 arranged on a substrate 1. The side walls 10 of the sacrificial layer 2 have been confined by lithography and etching, as in FIG. 2. The flat suspended structure designed to be formed on the sacrificial layer 2 is confined by the side walls 10 of the sacrificial layer 2. FIG. 7 represents a deposition step, on at least a part of the substrate and of the front face of the sacrificial layer 2, of an embedding layer 6 presenting a larger thickness than the thickness of the sacrificial layer. Typically the thickness of the embedding layer 6 is 1.7 times greater than the thickness of the sacrificial layer 2. The embedding layer 6 must be arranged in such a way as to envelop the sacrificial layer 2 and to prevent lateral displacement of the sacrificial layer 2. The embedding layer 6 can cover and surround the sacrificial layer 2 totally. It can also only cover a limited strip of the sacrificial layer 2 and extend, at the ends of this strip, onto the adjacent zones of the substrate 1, on each side of the sacrificial layer 2. The material of the embedding layer 6 must be a material enabling a planarization process to be used, in particular of the CMP type, for example SiO2, silicon nitride or aluminium. As represented in FIG. 8, a planarization step of the whole of the embedding layer 6 and of the sacrificial layer 2 is performed so that the front faces of the sacrificial layer 2 and of the embedding layer 6 form a common flat surface. The planarization step must be stopped as soon as the front face of the sacrificial layer 2 is completely uncovered. In this way, the fluctuations of thickness of the sacrificial layer 2 are evened out and the sacrificial layer 2 and the embedding layer 6 form a common flat surface. Continuing the planarization step beyond this limit increases the risk of damaging the quality of the surface of the sacrificial layer 2 and of degrading the flatness.
  • FIG. 9 represents a deposition step of a flat formation layer 3 for formation of the suspended structure on the front face of the common flat surface of the sacrificial layer 2 and the embedding layer 6. Unlike the prior art (FIG. 3), deposition of the formation layer 3 is performed on a single plane. A fourth step, represented in FIG. 10, consists in etching at least one opening 4 in the formation layer 3 up to the level of the front face of the sacrificial layer 2. Then, in a fifth step represented in FIG. 11, dry etching of the sacrificial layer 2 is performed. The flat formation layer 3 then forms the flat suspended structure 5.
  • A component achieved by the process according to the invention comprises a formation layer 3 of the suspended structure 5 presenting two flat faces, the front face and the back face arranged on the embedding layer 6.
  • The planarization step can comprise chemical mechanical polishing (CMP) and, in particular, consists only in chemical mechanical polishing. A process of the CMP type consists, in known manner, in holding the object to be planarized against a wetted rotary polishing plate in a polishing bath containing abrasives and an acid or alkaline solution. The abrasives are typically aluminium- or silicon-base particles. The layer to be planarized is thus chemically modified by the liquid and then removed by the particles of the abrasive. Applying a CMP type process directly on the sacrificial layer 2 is liable to damage the sacrificial layer 2, even in the presence of an embedding layer 6, in particular by incrustation of residues of the abrasive.
  • In another particular embodiment of the process of the invention, represented in FIGS. 12 to 14, contact of the sacrificial layer with the polishing bath is avoided. The initially deposited embedding layer 6 in fact presents a thickness about 1.7 times greater than the thickness of the sacrificial layer 2 (FIG. 12), and the planarization step comprises a chemical mechanical polishing sub-step enabling a flat surface of the embedding layer 6 (FIG. 13) to be obtained, and an etching sub-step of the embedding layer 6 uncovering the sacrificial layer 2 so that the front faces of the sacrificial layer 2 and of the embedding layer 6 form a common flat surface (FIG. 14).
  • In another particular embodiment of a process according to the invention, represented in FIGS. 15 to 19, initial etching of the sacrificial layer 2 is performed by means of a mask 7 previously formed on the front face of the sacrificial layer 2 by deposition, lithography and etching of a temporary layer (FIG. 15). The temporary layer can be made of dielectric or metal material (for example chromium, aluminium, etc . . . ). The typical thickness of the temporary layer is comprised between 10 and 50 nanometers. As represented in FIG. 16, the mask 7 enables the side walls 10 of the sacrificial layer 2 to be confined. Deposition of the embedding layer 6 is then performed on the assembly formed by the sacrificial layer 2 and the mask 7 (FIG. 17). The complete planarization step is then performed in two sub-steps. A first planarization sub-step can be performed by a CMP type process, without any risk of damaging the sacrificial layer 2, because the sacrificial layer 2 is protected by the mask 7 (FIG. 18). A second planarization sub-step consists in eliminating the mask 7, preferably by dry or wet etching, as represented in FIG. 19. The fabrication process of the suspended structure can then be continued by the steps represented in FIGS. 9 to 11, described above.
  • If the component comprises salient elements 8 on the substrate 1, as represented in FIG. 20, the process for producing the suspended structure can comprise additional steps before deposition of the sacrificial layer 2. In a particular embodiment illustrated in FIG. 21, a base layer 9 is deposited on the substrate 1 and on the salient elements 8 so as to completely fill the zones arranged between the salient elements 8. The base layer 9 presents a larger thickness than the thickness of the salient elements (typically 1.7 times greater). The next step is planarization by chemical mechanical polishing of the base layer 9 so that the front faces of the base layer 9 and of the salient elements 8 form a common flat surface (FIG. 22) able to act as substrate for deposition of the sacrificial layer 2 (FIG. 23). If there is a risk of the salient elements 8 being damaged during the planarization step, planarization of the CPM type is performed followed by etching up to the level of the front face of the salient elements 8.
  • The process is suitable for any type of sacrificial layer polymer (photosensitive resin, polyimide, PMMA, etc . . . ) and is independent from any treatment of the sacrificial layer polymer (polymer strongly or weakly annealed or even not annealed, annealed in UV, having undergone an ion implantation, etc . . . ). The process enables any geometry of the sacrificial layer to be achieved (narrow, broad, thick, thin, rectangular, round, etc. shape). There are no risks of scratching on the sacrificial layer and the substrate, nor are there any risks of tear-off of the sacrificial layer during the planarization step, the sacrificial layer at no time extending beyond the embedding layer.
  • Application of an etching sub-step during the planarization step (FIGS. 12 to 14) and/or the use of a temporary layer (mask 7) on the sacrificial layer 2 (FIGS. 15 to 19) moreover enables any risk of damage of the sacrificial layer 2 by the abrasives to be eliminated.
  • In the case where thermal treatment of the sacrificial layer is necessary (for example when the technological component fabrication steps comprise high temperature steps, i.e. at a higher temperature than the polymer deposition temperature), this will preferably be performed before the polymer etching step to prevent creep of the latter.

Claims (8)

1.-7. (canceled)
8. Production process of an integrated micro-system type component, comprising a flat suspended micro-structure, using a sacrificial layer of polymer material deposited on a substrate and having side walls confining the flat suspended structure, process successively comprising a planarization step, a deposition step of a formation layer of the suspended structure, an etching step of at least one opening of the formation layer up to the level of the front face of the sacrificial layer and a dry etching step of the sacrificial layer, process comprising, between deposition of the sacrificial layer and the planarization step, a deposition step, on at least a part of the substrate and of the front face of the sacrificial layer, of an embedding layer presenting a larger thickness than the thickness of the sacrificial layer, so that, after the planarization step, the front faces of the sacrificial layer and of the embedding layer form a common flat surface, the formation layer of the suspended structure being deposited on the front face of the common flat surface.
9. Production process according to claim 8, wherein the planarization step comprises chemical mechanical polishing.
10. Production process according to claim 8, wherein the planarization step successively comprises a chemical mechanical polishing sub-step of the embedding layer and an etching sub-step of the embedding layer so that the front faces of the sacrificial layer and of the embedding layer form a common flat surface.
11. Production process according to claim 8, wherein the side walls of the sacrificial layer are confined by etching by means of a mask formed on the front face of a layer made from polymer material by deposition, lithography and etching of a temporary layer, deposition of the embedding layer being performed on the assembly formed by the sacrificial layer and the mask, the mask being eliminated in the course of the planarization step.
12. Production process according to claim 11, wherein the planarization step comprises an etching step of the mask.
13. Production process according to claim 8, wherein, the component comprising salient elements on the substrate, the process successively comprises, before deposition of the sacrificial layer, deposition on at least one zone of the substrate designed to be covered by the sacrificial layer and comprising salient elements, of a base layer presenting a larger thickness than the thickness of the salient elements, and an additional planarization step, by chemical mechanical polishing, of the base layer so that the front faces of the base layer and of the salient elements form a common flat surface.
14. Component, produced by the process according to claim 8, wherein the two faces of the formation layer of the suspended structure are totally flat.
US10/536,890 2001-02-27 2003-12-18 Method for making a planar suspended microstructure, using a sacrificial layer of polymer material and resulting component Abandoned US20060138076A1 (en)

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070293023A1 (en) * 2006-06-19 2007-12-20 Yu-Fu Kang Method of fabricating suspended structure
CN100548868C (en) * 2006-07-04 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure and cavity
CN100548867C (en) * 2006-06-30 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure
CN100548869C (en) * 2006-07-04 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure
US20090317930A1 (en) * 2008-06-23 2009-12-24 Commissariat A L'energie Atomique Method for producing a structure comprising a mobile element by means of a heterogeneous sacrificial layer
US20110066117A1 (en) * 2004-05-13 2011-03-17 Post Sarah S Large volume enema
US20130207281A1 (en) * 2012-02-15 2013-08-15 Commissariat A L'energie Atomique Et Aux Ene Alt Microelectronic substrate comprising a layer of buried organic material

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6232789B1 (en) 1997-05-28 2001-05-15 Cascade Microtech, Inc. Probe holder for low current measurements
US5729150A (en) 1995-12-01 1998-03-17 Cascade Microtech, Inc. Low-current probe card with reduced triboelectric current generating cables
US5914613A (en) 1996-08-08 1999-06-22 Cascade Microtech, Inc. Membrane probing system with local contact scrub
US6034533A (en) 1997-06-10 2000-03-07 Tervo; Paul A. Low-current pogo probe card
US6256882B1 (en) 1998-07-14 2001-07-10 Cascade Microtech, Inc. Membrane probing system
US6578264B1 (en) 1999-06-04 2003-06-17 Cascade Microtech, Inc. Method for constructing a membrane probe using a depression
US6888362B2 (en) * 2000-11-09 2005-05-03 Formfactor, Inc. Test head assembly for electronic components with plurality of contoured microelectronic spring contacts
US7435108B1 (en) * 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US7189077B1 (en) 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US6780001B2 (en) * 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US6939474B2 (en) * 1999-07-30 2005-09-06 Formfactor, Inc. Method for forming microelectronic spring structures on a substrate
US6838890B2 (en) 2000-02-25 2005-01-04 Cascade Microtech, Inc. Membrane probing system
EP2270592B1 (en) 2000-07-17 2015-09-02 Board of Regents, The University of Texas System Method of forming a pattern on a substrate
DE20114544U1 (en) 2000-12-04 2002-02-21 Cascade Microtech, Inc., Beaverton, Oreg. wafer probe
WO2003052435A1 (en) 2001-08-21 2003-06-26 Cascade Microtech, Inc. Membrane probing system
US7168160B2 (en) * 2001-12-21 2007-01-30 Formfactor, Inc. Method for mounting and heating a plurality of microelectronic components
EP1509776A4 (en) 2002-05-23 2010-08-18 Cascade Microtech Inc TEST PROBE OF A DEVICE SUBMITTED TEST
US7179079B2 (en) * 2002-07-08 2007-02-20 Molecular Imprints, Inc. Conforming template for patterning liquids disposed on substrates
US20080160129A1 (en) 2006-05-11 2008-07-03 Molecular Imprints, Inc. Template Having a Varying Thickness to Facilitate Expelling a Gas Positioned Between a Substrate and the Template
US6724205B1 (en) 2002-11-13 2004-04-20 Cascade Microtech, Inc. Probe for combined signals
FR2849016B1 (en) * 2002-12-18 2005-06-10 Commissariat Energie Atomique METHOD FOR MAKING A PLANE SUSPENDED MICRO-STRUCTURE USING A SACRIFICIAL LAYER OF POLYMERIC MATERIAL AND COMPONENT OBTAINED
EP1602623B1 (en) * 2003-03-07 2011-08-17 Tosoh Corporation Method of moulding a microfluidic structure and mould
US7057404B2 (en) 2003-05-23 2006-06-06 Sharp Laboratories Of America, Inc. Shielded probe for testing a device under test
JP2004363380A (en) * 2003-06-05 2004-12-24 Sanyo Electric Co Ltd Optical semiconductor device and method of manufacturing the same
DE112004002554T5 (en) 2003-12-24 2006-11-23 Cascade Microtech, Inc., Beaverton Active wafer sample
EP1766426B1 (en) 2004-07-07 2013-09-11 Cascade Microtech, Inc. Probe head having a membrane suspended probe
US7785526B2 (en) 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
US7420381B2 (en) 2004-09-13 2008-09-02 Cascade Microtech, Inc. Double sided probing structures
US7535247B2 (en) 2005-01-31 2009-05-19 Cascade Microtech, Inc. Interface for testing semiconductors
US7656172B2 (en) 2005-01-31 2010-02-02 Cascade Microtech, Inc. System for testing semiconductors
US20060177535A1 (en) * 2005-02-04 2006-08-10 Molecular Imprints, Inc. Imprint lithography template to facilitate control of liquid movement
US20060266916A1 (en) * 2005-05-25 2006-11-30 Molecular Imprints, Inc. Imprint lithography template having a coating to reflect and/or absorb actinic energy
US7449899B2 (en) 2005-06-08 2008-11-11 Cascade Microtech, Inc. Probe for high frequency signals
EP1932003A2 (en) 2005-06-13 2008-06-18 Cascade Microtech, Inc. Wideband active-passive differential signal probe
US8011916B2 (en) * 2005-09-06 2011-09-06 Canon Kabushiki Kaisha Mold, imprint apparatus, and process for producing structure
US7491049B2 (en) * 2005-09-30 2009-02-17 Hon Hai Precision Industry Co., Ltd. Apparatus for hot embossing lithography
US7388542B2 (en) * 2005-11-10 2008-06-17 Rcd Technology, Inc. Method for an element using two resist layers
JP4929753B2 (en) * 2006-02-22 2012-05-09 オムロン株式会社 Method for forming thin film structure, thin film structure, vibration sensor, pressure sensor, and acceleration sensor
GB2436163A (en) * 2006-03-10 2007-09-19 Seiko Epson Corp Device fabrication by ink-jet printing materials into bank structures, and embossing tool
US20100009025A1 (en) * 2006-03-27 2010-01-14 Masahiro Katsumura Mold for pattern transfer
JP5306989B2 (en) * 2006-04-03 2013-10-02 モレキュラー・インプリンツ・インコーポレーテッド Method for simultaneously patterning a substrate having a plurality of fields and alignment marks
DE202007018733U1 (en) 2006-06-09 2009-03-26 Cascade Microtech, Inc., Beaverton Transducer for differential signals with integrated balun
US7723999B2 (en) 2006-06-12 2010-05-25 Cascade Microtech, Inc. Calibration structures for differential signal probing
US7443186B2 (en) 2006-06-12 2008-10-28 Cascade Microtech, Inc. On-wafer test structures for differential signals
US7764072B2 (en) 2006-06-12 2010-07-27 Cascade Microtech, Inc. Differential signal probing system
US7403028B2 (en) 2006-06-12 2008-07-22 Cascade Microtech, Inc. Test structure and probe for differential signals
US20080303187A1 (en) * 2006-12-29 2008-12-11 Molecular Imprints, Inc. Imprint Fluid Control
JP5274128B2 (en) * 2007-08-03 2013-08-28 キヤノン株式会社 Imprint method and substrate processing method
US7876114B2 (en) 2007-08-08 2011-01-25 Cascade Microtech, Inc. Differential waveguide probe
US7906274B2 (en) * 2007-11-21 2011-03-15 Molecular Imprints, Inc. Method of creating a template employing a lift-off process
JP2010009729A (en) * 2008-06-30 2010-01-14 Toshiba Corp Imprint stamper, method of manufacturing imprint stamper, magnetic recording medium, method of manufacturing magnetic recording medium and magnetic disk apparatus
WO2010011835A1 (en) * 2008-07-25 2010-01-28 Henkel Corporation Mold assembly and attenuated light process for fabricating molded parts
US7888957B2 (en) 2008-10-06 2011-02-15 Cascade Microtech, Inc. Probing apparatus with impedance optimized interface
US20100104678A1 (en) * 2008-10-28 2010-04-29 Formfactor, Inc. Apparatus and method for making and using a tooling die
US8410806B2 (en) 2008-11-21 2013-04-02 Cascade Microtech, Inc. Replaceable coupon for a probing apparatus
JP2010149482A (en) * 2008-12-26 2010-07-08 Toshiba Corp Mold for inprint and pattern forming method
JP5421380B2 (en) * 2009-09-18 2014-02-19 株式会社東芝 mold
TW201141340A (en) * 2009-12-28 2011-11-16 Fujikura Ltd Die and manufacturing method therefor
US9034233B2 (en) * 2010-11-30 2015-05-19 Infineon Technologies Ag Method of processing a substrate
US20150306814A1 (en) * 2014-04-28 2015-10-29 Asahi Glass Company, Limited Imprint mold, and imprint method
US10058890B1 (en) * 2015-11-20 2018-08-28 Seagate Technology Llc Methods of forming an air bearing surface on a slider and related sliders
JP6784350B2 (en) * 2015-11-22 2020-11-11 オルボテック リミテッド Controlling surface properties of printed 3D structures
US20180105455A1 (en) * 2016-10-17 2018-04-19 Corning Incorporated Silica test probe and other such devices
US10991582B2 (en) * 2016-12-21 2021-04-27 Canon Kabushiki Kaisha Template for imprint lithography including a recession, an apparatus of using the template, and a method of fabricating an article
US11806444B2 (en) 2019-08-06 2023-11-07 New Jersey Institute Of Technology Additive manufacturing of cell-laden functional hydrogel and live cell constructs
US12121632B2 (en) 2018-08-08 2024-10-22 New Jersey Institute Of Technology Additive manufacturing of cell-laden functional hydrogel and live cell constructs
US11491702B2 (en) * 2018-08-08 2022-11-08 New Jersey Institute Of Technology Additive manufacturing of channels
DE102020006455A1 (en) * 2020-10-20 2022-04-21 Giesecke+Devrient Currency Technology Gmbh Production of pigments with a defined size and shape
CN114764163B (en) * 2021-01-15 2024-07-30 宁波元芯光电子科技有限公司 Suspended waveguide supporting structure and manufacturing method thereof

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
US5835256A (en) * 1995-06-19 1998-11-10 Reflectivity, Inc. Reflective spatial light modulator with encapsulated micro-mechanical elements
US5985748A (en) * 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6090712A (en) * 1997-12-18 2000-07-18 Advanced Micro Devices, Inc. Shallow trench isolation formation with no polish stop
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
US20030183887A1 (en) * 2002-03-11 2003-10-02 Samsung Electronics Co., Ltd. MEMS device and fabrication method thereof

Family Cites Families (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173737A (en) 1963-08-05 1965-03-16 Amp Inc Connector with tab terminal latching means
US3519890A (en) 1968-04-01 1970-07-07 North American Rockwell Low stress lead
US3649153A (en) * 1969-11-04 1972-03-14 Peter E Brudy Faceted core
US3899154A (en) * 1970-09-05 1975-08-12 Ichikoh Industries Ltd Light reflector mold
US3842189A (en) 1973-01-08 1974-10-15 Rca Corp Contact array and method of making the same
JPS58191453A (en) 1982-05-04 1983-11-08 Nec Corp Semiconductor device
US4516253A (en) * 1983-03-15 1985-05-07 Micronix Partners Lithography system
US4553192A (en) 1983-08-25 1985-11-12 International Business Machines Corporation High density planar interconnected integrated circuit package
US4615573A (en) 1983-10-28 1986-10-07 Honeywell Inc. Spring finger interconnect for IC chip carrier
US5829128A (en) 1993-11-16 1998-11-03 Formfactor, Inc. Method of mounting resilient contact structures to semiconductor devices
NL8503234A (en) * 1985-11-25 1987-06-16 Philips Nv DIE.
US4832790A (en) * 1986-04-11 1989-05-23 Advanced Tool Technologies, Inc. Method of making metal molds and dies
JP2533511B2 (en) 1987-01-19 1996-09-11 株式会社日立製作所 Electronic component connection structure and manufacturing method thereof
US4772228A (en) 1987-10-20 1988-09-20 Gte Products Corporation Electrical contact
US5103557A (en) 1988-05-16 1992-04-14 Leedy Glenn J Making and testing an integrated circuit using high density probe points
USH842H (en) 1989-06-30 1990-11-06 American Telephone And Telegraph Company Metal conductor structure having low electro-migration at high currents for semiconductor devices
JP3030574B2 (en) 1990-08-16 2000-04-10 キヤノン株式会社 Micro-displacement information detecting probe element, scanning tunnel microscope, atomic force microscope, and information processing apparatus using the same
JPH07109780B2 (en) 1991-02-19 1995-11-22 山一電機株式会社 Contacts in sockets for electrical components
US5173055A (en) 1991-08-08 1992-12-22 Amp Incorporated Area array connector
JPH0580530A (en) * 1991-09-24 1993-04-02 Hitachi Ltd Production of thin film pattern
US5152695A (en) 1991-10-10 1992-10-06 Amp Incorporated Surface mount electrical connector
JP3028875B2 (en) 1992-01-18 2000-04-04 ソニー株式会社 Lead frame manufacturing method
US5210939A (en) 1992-04-17 1993-05-18 Intel Corporation Lead grid array integrated circuit
US5228861A (en) 1992-06-12 1993-07-20 Amp Incorporated High density electrical connector system
US5599194A (en) 1992-08-18 1997-02-04 Enplas Corporation IC socket and its contact pin
US5371654A (en) 1992-10-19 1994-12-06 International Business Machines Corporation Three dimensional high performance interconnection package
JPH06267408A (en) 1993-03-09 1994-09-22 Canon Inc Manufacture of detection probe for very small displacement, detection probe for very small displacement, and scanning probe microscope and information processor using these
EP0615131A1 (en) 1993-03-10 1994-09-14 Co-Operative Facility For Aging Tester Development Prober for semiconductor integrated circuit element wafer
US5914614A (en) 1996-03-12 1999-06-22 International Business Machines Corporation High density cantilevered probe for electronic devices
US5348616A (en) * 1993-05-03 1994-09-20 Motorola, Inc. Method for patterning a mold
DE69416200T2 (en) 1993-06-16 1999-06-02 Nitto Denko Corp., Ibaraki, Osaka Probe construction
GB2279805B (en) 1993-07-02 1997-09-17 Plessey Semiconductors Ltd Bare die testing
JPH0721968A (en) 1993-07-06 1995-01-24 Canon Inc Cantilever type displacement element, cantilever type probe using the displacement element, and scanning type probe microscope and data processer using the probe
US6184053B1 (en) 1993-11-16 2001-02-06 Formfactor, Inc. Method of making microelectronic spring contact elements
US6029344A (en) 1993-11-16 2000-02-29 Formfactor, Inc. Composite interconnection element for microelectronic components, and method of making same
US6064213A (en) 1993-11-16 2000-05-16 Formfactor, Inc. Wafer-level burn-in and test
US5974662A (en) 1993-11-16 1999-11-02 Formfactor, Inc. Method of planarizing tips of probe elements of a probe card assembly
US5462440A (en) 1994-03-11 1995-10-31 Rothenberger; Richard E. Micro-power connector
US5666190A (en) 1994-04-12 1997-09-09 The Board Of Trustees Of The Leland Stanford, Jr. University Method of performing lithography using cantilever array
US5534784A (en) 1994-05-02 1996-07-09 Motorola, Inc. Method for probing a semiconductor wafer
US5632631A (en) 1994-06-07 1997-05-27 Tessera, Inc. Microelectronic contacts with asperities and methods of making same
JPH07333232A (en) 1994-06-13 1995-12-22 Canon Inc Formation of cantilever having probe
US5513430A (en) 1994-08-19 1996-05-07 Motorola, Inc. Method for manufacturing a probe
KR20060087616A (en) 1994-11-15 2006-08-02 폼팩터, 인크. Space Transformer Assembly
JPH08306708A (en) 1995-05-09 1996-11-22 Sanyo Electric Co Ltd Semiconductor device and its fabrication
US5613861A (en) 1995-06-07 1997-03-25 Xerox Corporation Photolithographically patterned spring contact
US5701085A (en) 1995-07-05 1997-12-23 Sun Microsystems, Inc. Apparatus for testing flip chip or wire bond integrated circuits
DE69627895T2 (en) * 1995-07-28 2004-05-19 Nippon Carbide Kogyo K.K. MANUFACTURING METHOD OF MICROPRISM MATRIX
US5810609A (en) 1995-08-28 1998-09-22 Tessera, Inc. Socket for engaging bump leads on a microelectronic device and methods therefor
US6483328B1 (en) 1995-11-09 2002-11-19 Formfactor, Inc. Probe card for probing wafers with raised contact elements
JP3838381B2 (en) 1995-11-22 2006-10-25 株式会社アドバンテスト Probe card
US5688699A (en) * 1996-01-16 1997-11-18 Raytheon Company Microbolometer
US5994152A (en) * 1996-02-21 1999-11-30 Formfactor, Inc. Fabricating interconnects and tips using sacrificial substrates
WO1997044676A1 (en) 1996-05-17 1997-11-27 Formfactor, Inc. Microelectronic contact structure and method of making same
US5900350A (en) * 1996-06-06 1999-05-04 Velcro Industries B.V. Molding methods, molds and products
NL1004510C2 (en) 1996-11-12 1998-05-14 Charmant Beheer B V Method for manufacturing a test adapter as well as test adapter and a method for testing printed circuit boards.
FR2762140B1 (en) 1997-04-10 2000-01-14 Mesatronic METHOD FOR MANUFACTURING A MULTIPLE CONTACT POINT CARD FOR TESTING SEMICONDUCTOR CHIPS
US5958469A (en) * 1997-05-14 1999-09-28 Eastman Kodak Company Method for fabricating tools for molding diffractive surfaces on optical lenses
JP3378259B2 (en) 1997-05-15 2003-02-17 フォームファクター，インコーポレイテッド How to create a contact structure
JPH1138041A (en) 1997-07-24 1999-02-12 Mitsubishi Electric Corp Cantilever probe needle for probe card, its manufacture, and control method
JP3524343B2 (en) * 1997-08-26 2004-05-10 キヤノン株式会社 Method for forming minute opening, projection having minute opening, probe or multi-probe using the same, surface observation apparatus, exposure apparatus, and information processing apparatus using the probe
DE69721986T2 (en) 1997-08-27 2004-02-12 Imec Vzw Stylus configuration, manufacturing process and use of styluses
US6059982A (en) 1997-09-30 2000-05-09 International Business Machines Corporation Micro probe assembly and method of fabrication
US6014032A (en) 1997-09-30 2000-01-11 International Business Machines Corporation Micro probe ring assembly and method of fabrication
JP3123483B2 (en) 1997-10-28 2001-01-09 日本電気株式会社 Probe card and probe card forming method
US5944537A (en) 1997-12-15 1999-08-31 Xerox Corporation Photolithographically patterned spring contact and apparatus and methods for electrically contacting devices
US6497581B2 (en) 1998-01-23 2002-12-24 Teradyne, Inc. Robust, small scale electrical contactor
US6207247B1 (en) * 1998-03-27 2001-03-27 Nikon Corporation Method for manufacturing a molding tool used for sustrate molding
SG108210A1 (en) 1998-06-19 2005-01-28 Advantest Corp Probe contactor formed by photolithography process
JP3554228B2 (en) * 1998-07-29 2004-08-18 キヤノン株式会社 Microlens mold or mold master, and method for producing them
WO2000010016A1 (en) 1998-08-12 2000-02-24 Tokyo Electron Limited Contactor and production method for contactor
US6031282A (en) 1998-08-27 2000-02-29 Advantest Corp. High performance integrated circuit chip package
US6184576B1 (en) 1998-09-21 2001-02-06 Advantest Corp. Packaging and interconnection of contact structure
US6214631B1 (en) 1998-10-30 2001-04-10 The Trustees Of Princeton University Method for patterning light emitting devices incorporating a movable mask
US6255727B1 (en) 1999-08-03 2001-07-03 Advantest Corp. Contact structure formed by microfabrication process
WO2000033089A2 (en) 1998-12-02 2000-06-08 Formfactor, Inc. Lithographic contact elements
US6255126B1 (en) 1998-12-02 2001-07-03 Formfactor, Inc. Lithographic contact elements
JP4414502B2 (en) 1999-02-25 2010-02-10 東京エレクトロン株式会社 Probing card
US6334960B1 (en) * 1999-03-11 2002-01-01 Board Of Regents, The University Of Texas System Step and flash imprint lithography
US6183267B1 (en) 1999-03-11 2001-02-06 Murray Hill Devices Ultra-miniature electrical contacts and method of manufacture
US7435108B1 (en) * 1999-07-30 2008-10-14 Formfactor, Inc. Variable width resilient conductive contact structures
US6939474B2 (en) * 1999-07-30 2005-09-06 Formfactor, Inc. Method for forming microelectronic spring structures on a substrate
US7189077B1 (en) * 1999-07-30 2007-03-13 Formfactor, Inc. Lithographic type microelectronic spring structures with improved contours
US6780001B2 (en) * 1999-07-30 2004-08-24 Formfactor, Inc. Forming tool for forming a contoured microelectronic spring mold
US6713374B2 (en) * 1999-07-30 2004-03-30 Formfactor, Inc. Interconnect assemblies and methods
US6888362B2 (en) * 2000-11-09 2005-05-03 Formfactor, Inc. Test head assembly for electronic components with plurality of contoured microelectronic spring contacts
EP1208595A2 (en) 1999-07-30 2002-05-29 Formfactor, Inc. Interconnect assemblies and methods
US6250933B1 (en) * 2000-01-20 2001-06-26 Advantest Corp. Contact structure and production method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582678A (en) * 1986-10-20 1996-12-10 Canon Kabushiki Kaisha Process for producing ink jet recording head
US5430421A (en) * 1992-12-15 1995-07-04 Asulab S.A. Reed contactor and process of fabricating suspended tridimensional metallic microstructure
US5835256A (en) * 1995-06-19 1998-11-10 Reflectivity, Inc. Reflective spatial light modulator with encapsulated micro-mechanical elements
US5985748A (en) * 1997-12-01 1999-11-16 Motorola, Inc. Method of making a semiconductor device using chemical-mechanical polishing having a combination-step process
US6090712A (en) * 1997-12-18 2000-07-18 Advanced Micro Devices, Inc. Shallow trench isolation formation with no polish stop
US20020047172A1 (en) * 2000-08-23 2002-04-25 Reid Jason S. Transition metal dielectric alloy materials for MEMS
US20030183887A1 (en) * 2002-03-11 2003-10-02 Samsung Electronics Co., Ltd. MEMS device and fabrication method thereof

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110066117A1 (en) * 2004-05-13 2011-03-17 Post Sarah S Large volume enema
US20070293023A1 (en) * 2006-06-19 2007-12-20 Yu-Fu Kang Method of fabricating suspended structure
US7531457B2 (en) 2006-06-19 2009-05-12 Touch Micro-System Technology Inc. Method of fabricating suspended structure
CN100548867C (en) * 2006-06-30 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure
CN100548868C (en) * 2006-07-04 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure and cavity
CN100548869C (en) * 2006-07-04 2009-10-14 探微科技股份有限公司 Method for manufacturing suspension structure
US20090317930A1 (en) * 2008-06-23 2009-12-24 Commissariat A L'energie Atomique Method for producing a structure comprising a mobile element by means of a heterogeneous sacrificial layer
US8524520B2 (en) 2008-06-23 2013-09-03 Commissariat A L'energie Atomique Method for producing a structure comprising a mobile element by means of a heterogeneous sacrificial layer
US20130207281A1 (en) * 2012-02-15 2013-08-15 Commissariat A L'energie Atomique Et Aux Ene Alt Microelectronic substrate comprising a layer of buried organic material

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