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US20060131734A1 - Multi lead frame power package - Google Patents

Multi lead frame power package Download PDF

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Publication number
US20060131734A1
US20060131734A1 US11/074,278 US7427805A US2006131734A1 US 20060131734 A1 US20060131734 A1 US 20060131734A1 US 7427805 A US7427805 A US 7427805A US 2006131734 A1 US2006131734 A1 US 2006131734A1
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US
United States
Prior art keywords
lead frame
die
mold compound
thermal energy
dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US11/074,278
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English (en)
Inventor
Steven Kummerl
Bernhard Lange
Anthony Coyle
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Texas Instruments Inc
Original Assignee
Texas Instruments Inc
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Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Priority to US11/074,278 priority Critical patent/US20060131734A1/en
Assigned to TEXAS INSTRUMENTS INCORPORATED reassignment TEXAS INSTRUMENTS INCORPORATED ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: COYLE, ANTHONY L., KUMMERL, STEVEN A., LANGE, BERNHARD
Priority to TW094145143A priority patent/TWI295837B/zh
Publication of US20060131734A1 publication Critical patent/US20060131734A1/en
Priority to US11/831,458 priority patent/US20080020517A1/en
Priority to US12/573,196 priority patent/US8053876B2/en
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
    • H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
    • H01L23/4334—Auxiliary members in encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/32—Non-reciprocal transmission devices
    • H01P1/38—Circulators
    • H01P1/383—Junction circulators, e.g. Y-circulators
    • H01P1/387—Strip line circulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • This invention relates generally to the field of semiconductor devices and, more particularly, to a multi lead frame power package.
  • a packaged integrated circuit may generally include semiconductor chips and their associated components embedded within a molding.
  • the packaged integrated circuits may be connected to a printed circuit board of an electronic device. Through the printed circuit board, the packaged integrated circuit may be connected to other chips and to external inputs and outputs. In operation, the components of the packaged integrated circuits create thermal energy, which dissipates in attempts to seek thermal equilibrium.
  • a system operable to facilitate dissipation of thermal energy, includes a mold compound, a die, and a first lead frame.
  • the die is disposed within the mold compound, and in operation generates thermal energy.
  • the first lead frame is disposed at least partially within the mold compound.
  • the first lead frame includes a wing that is external of the mold compound and is operable to receive thermal energy dissipated from the die through the first lead frame.
  • a system operable to facilitate dissipation of thermal energy, includes a mold compound, a die, a first lead frame, and a second lead frame.
  • the die is disposed within the mold compound, and in operation generates thermal energy.
  • the first lead frame is disposed at least partially within the mold compound and is operable to facilitate transmission of a signal.
  • the second lead frame is disposed at least partially within the compound, at least partially separated from the first lead frame, and is operable to facilitate a dissipation of thermal energy.
  • a technical advantage of one embodiment may include the capability to increase the efficiency of thermal dissipation away from a die in a packaged integrated circuit.
  • Other technical advantages of other embodiments may include the capability to provide a metal attachment extending from a packaged integrated circuit to which a heat sink may attach; the capability to increase thermal dissipation throughput in a packaged integrated circuit; and the capability to allow flexibility in designing geometries to help spread thermal energy within and out of a packaged integrated circuit.
  • FIG. 1 is a side cross-sectional view of a system, according to an embodiment of the invention.
  • FIG. 2 is a side cross-sectional view of a system, according to another embodiment of the invention.
  • FIG. 3 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 4 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 5 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 6 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 7 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 8 is a cut away top view of a system, according to yet another embodiment of the invention.
  • FIG. 9 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIG. 10 is a cut away top view of a system, according to yet another embodiment of the invention.
  • FIG. 11 is a side cross-sectional view of a system, according to yet another embodiment of the invention.
  • FIGS. 12A, 12B , and 12 C are cut away top views illustrating a production of a system, according to an embodiment of the invention.
  • FIGS. 13A and 13B illustrate a configuration of coupling a thermal dissipation system to a packaged integrated circuit.
  • FIG. 1 is a side cross-sectional view of a system 60 A, according to an embodiment of the invention.
  • the system 60 A in this embodiment generally includes a die 200 supported on and/or bonded to a pad 310 A of a lead frame 300 A.
  • the die 200 and pad 310 A are at least partially encapsulated in a mold compound 50 to form a packaged integrated circuit 100 A. Encapsulation of the die 200 and the pad 310 A with the mold compound 50 may be accomplished using a variety of semiconductor fabrication packaging techniques recognized by those of ordinary skill in the art. Although configurations of a packaged integrated circuit will be described with reference to embodiments herein, the packaged integrated circuit may include more, less, or different components than those described.
  • the die 200 may comprise a variety of materials including silicon, gallium arsenide, or other suitable substrate materials.
  • the die 200 generally provide the foundation for a variety of semiconductor features, including but not limited to, analog and/or digital circuits such as digital to analog converters, computer processor units, amplifiers, digital signal processors, controllers, transistors, or other semiconductor features.
  • the die 200 may be attached to the pad 310 A, utilizing a variety of attachment mediums, including epoxy, polyimide, other adhesive chemistries, mixture of such chemistries, solder, a gold-silicon Eutectic layer, or other suitable material for bonding the die 200 to the pad 310 A.
  • attachment mediums may establish both a mechanical and thermal connection between the die 200 and pad 310 A.
  • the lead frame 300 A may be utilized to facilitate the transfer of electrical signaling between the semiconductor features formed in and/or on the die 200 and a variety of other devices, for example, a printed circuit board.
  • the lead frame 300 A may be generally made from any suitable electrically conductive material, such as copper, aluminum, or other suitable materials.
  • the pad 310 A of the lead frame 300 A may similarly be made of a variety of electrically conductive materials, including copper alloys, nickel alloys, aluminum, other suitable materials, or combinations of the preceding. While not explicitly shown in FIG. 1 , the lead frame 300 A may include leads to transfer such electrical signaling. Examples of such leads are discussed below in the embodiment described with reference to FIG. 8 .
  • the pad 310 A in this embodiment is shown protruding outside the mold compound 50 of the packaged integrated circuit 100 A, forming wings 320 A.
  • the wings 320 A of FIG. 1 are bent upwards in this embodiment; however, in other embodiments the wings 320 A may be positioned in other directions. For example, the wings 320 A may be bent down, bent at an angle, or left extending straight out.
  • the wings 320 A extending outside a footprint area of the packaged integrated circuit 100 may be bent in the desired direction as opposed to being removed.
  • the semiconductor features formed in and/or on the die 200 generate thermal energy.
  • the thermal energy generated by the die 200 in attempts to seek thermal equilibrium may generally dissipate through the mold compound 50 .
  • the mold compound typically has a relatively low thermal conductivity for the transfer of thermal energy in relation to other types of material.
  • ever-increasing power densities being utilized in semiconductor features formed in and/or on the die 200 increase the amount of thermal energy being created. Accordingly, teachings of embodiments of the invention take advantage of the thermal conductive properties of the pad 310 A to dissipate thermal energy from the die 200 to the wings 320 A.
  • the conductive path through the pad 310 A may have a better thermal conductivity for the transfer of thermal energy than the mold compound 50 , greater dissipation of thermal energy away from the die 200 may be accomplished.
  • the transfer of thermal energy may commonly be referred to as “heat”.
  • Thermal energy dissipated to the wings 320 A may dissipate into the air, other devices, or other suitable materials, some of which will be described below.
  • the wings 320 A of the pad 310 A may be bent down to contact a printed circuit board such that the printed circuit board operates as a heat sink for dissipation of the thermal energy away from the die 200 .
  • FIG. 2 is a side cross-sectional view of a system 60 B, according to another embodiment of the invention.
  • the system 60 B of FIG. 2 is similar to the system 60 A of FIG. 1 , including a packaged integrated circuit 100 B with mold compound 50 , a die 200 , a pad 310 B, a lead frame 300 B, and wings 320 B.
  • the system 60 B of FIG. 2 includes a thermal dissipation system 400 coupled to the wings 320 B on each side of the packaged integrated circuit 100 B. Any of a variety of thermal dissipation systems may be utilized, including in some embodiments a metallic configuration or configurations utilizing fluid (e.g., systems utilizing circulated fluids).
  • the thermal dissipation system 400 is shown as a heat sink 410 B with cooling fins 412 B.
  • Heat sinks are generally recognized by those of ordinary skill in the art. Any of a variety of configurations of heat sinks may be utilized, including in some embodiments, heat sinks with cooling fans.
  • thermal energy may be dissipated from the die 200 through the pad 310 B, the wings 320 B, and to the heat sink 410 B, where the cooling fins 412 B facilitate transfer of the thermal energy to the air, other devices, or other suitable materials.
  • FIG. 3 is a side cross-sectional view of a system 60 C, according to yet another embodiment of the invention.
  • the system 60 C of FIG. 3 is similar to the system 60 A of FIG. 1 , including a packaged integrated circuit 100 C with mold compound 50 , a die 200 , a pad 310 C, and a lead frame 300 C.
  • the system 60 C of FIG. 3 includes another lead frame 500 C coupled below the lead frame 300 C and disposed at least partially within the mold compound 50 of the packaged integrated circuit 100 C.
  • the lead frame 500 C may generally be designed to dissipate thermal energy as opposed to carrying a signal.
  • the lead frame 500 C may be made of a variety of thermally conductive materials including, but not limited to, copper alloys, nickel alloys, aluminum, other suitable materials, or combinations of the preceding. In production of the packaged integrated circuit 100 C the lead frame 500 C may be added at the bottom of the pad 310 during the injection of mold compound 50 or prior to the injection of mold compound 50 , utilizing a variety of objects, including clamps, glue, adhesive tape, soldering, thermal conductive attachment material, and other suitable materials. In the incorporation of lead frame 500 C in proximity to lead frame 300 C, one of ordinary skill in the art would recognize that the lead frames 300 C, 500 C, may be configured in a manner as to not disturb the electrical signals that may be carried by the leads of the lead frame 300 C. FIG. 8 gives examples of a bend that may be utilized to preserve electrical signaling while facilitating thermal dissipation.
  • the lead frame 500 C of FIG. 3 similar to the lead frame 300 A of FIG. 1 , generally protrudes outside the mold compound 50 of the packaged integrated circuit 100 C, forming wings 520 C.
  • thermal energy may be dissipated from the die 200 through the pad 310 C and the lead frame 500 C to the wings 520 C.
  • the additional conductive path provided by the lead frame 500 C facilitates the transfer of thermal energy away from the die 200 .
  • thermal conductivity generally tracks electrical conductivity for a large number of materials (e.g., metals), one of ordinary skill in the art will recognize that for some materials this may not the case. Accordingly, embodiments of the invention may take advantage of this phenomena to facilitate dissipation of thermal energy away from the die 200 while not interrupting electrical signaling.
  • FIG. 4 is a side cross-sectional view of a system 60 D, according to yet another embodiment of the invention.
  • the system 60 D of FIG. 3 may operate in a similar manner to the system 60 C of FIG. 3 , including a packaged integrated circuit 100 D with mold compound 50 , a die 200 , a pad 310 D, a lead frame 300 D, a lead frame 500 D, and wings 520 D.
  • the wings 520 D are bent up at a distance from mold compound 50 of the packaged integrated circuit 100 D.
  • thermal energy may be dissipated from the die 200 through the pad 310 D and the lead frame 500 D to the wings 520 D.
  • the configuration of the wings 520 D in this embodiment may facilitate connections to other devices, for example a heat sink.
  • FIG. 5 is a side cross-sectional view of a system 60 E, according to yet another embodiment of the invention.
  • the system 60 E of FIG. 5 may operate in a similar manner to the system 60 D of FIG. 4 , including a packaged integrated circuit 100 E with mold compound 50 , a die 200 , a pad 310 E, a lead frame 300 E, a lead frame 500 E, and wings 520 E.
  • the system 60 E of FIG. 5 includes a thermal dissipation system 400 coupled to the wings 520 E on each respective side of the packaged integrated circuit 100 E. Similar to FIG. 2 , any of variety of thermal dissipation systems may be utilized, including in some embodiments metallic configurations or configurations that utilize fluid.
  • the thermal dissipation system 400 is shown as a heat sink 410 E with cooling fins 412 E.
  • thermal energy may be dissipated from the die 200 through the pad 310 E, the lead frame 500 E, and the wings 520 E, to the heat sink 410 E, where the cooling fins 412 E facilitate transfer of the thermal energy to the air, other devices, or other suitable materials.
  • FIG. 6 is a side cross-sectional view of a system 60 F, according to yet another embodiment of the invention.
  • the system 60 F of FIG. 6 may operate in a similar manner to the system 60 D of FIG. 4 , including a packaged integrated circuit 100 F with mold compound 50 , a die 200 , a pad 310 F, a lead frame 300 F, a lead frame 500 F, and wings 520 F.
  • the wings 520 D are bent up flush against the mold compound 50 of the packaged integrated circuit 100 F.
  • FIG. 7 is a side cross-sectional view of a system 60 G, according to yet another embodiment of the invention.
  • the system 60 G of FIG. 7 may operate in a similar manner to the system 60 E of FIG. 6 , including a packaged integrated circuit 100 G with mold compound 50 , a die 200 , a pad 310 G, a lead frame 300 G, a lead frame 500 G, and wings 520 G flush with the mold compound 50 of the packaged integrated circuit 100 G.
  • a thermal dissipation system 400 is coupled to the wings 520 G on each respective side of the packaged integrated circuit 100 G. Similar to FIGS.
  • thermal dissipation system 400 is shown as a heat sink 410 G with cooling fins 412 G and a contact piece 414 G.
  • the contact piece 414 G facilitates dissipation of thermal energy traveling through the mold compound 50 , for example, from the top of the die 200 .
  • thermal energy may additionally be dissipated from the die 200 through the pad 310 G, the lead frame 500 G, and the wings 520 G to the heat sink 410 G where the cooling fins 412 G facilitate transfer of thermal energy to the air, other devices, or other suitable materials.
  • FIG. 8 is a cut away top view of a system 60 H, according to yet another embodiment of the invention. A portion of the compound 50 has been removed to illustrate features of the system 60 H.
  • the system 60 H of FIG. 8 may operate in a similar manner to the system 60 F of FIG. 6 , including a packaged integrated circuit 100 H with mold compound 50 , a die 200 , a pad 310 H, a lead frame 300 H, a lead frame 500 H, and wings 520 H.
  • FIG. 8 also shows a configuration of leads 330 H that may be utilized to facilitate electrical signaling between semiconductor features formed in and/or on the die 200 and other devices, for example, a printed circuit board.
  • the lead frames 300 H, 500 H may be configured in a variety of manner to preserve the electrical signals that may be carried by the leads 330 H.
  • the leads 330 H of the lead frame 300 H may be bent as shown in FIG. 8 .
  • the lead frame 300 H may require a particular geometry to carry an electrical signal while the lead frame 500 H may require a completely different geometry designed to facilitate a dissipation of thermal energy.
  • the separation and/or partial separation of the lead frame 300 H and lead frame 500 H may allow such configurations.
  • FIG. 9 is a side cross-sectional view of a system 60 I, according to yet another embodiment of the invention.
  • the system 60 I of FIG. 9 may operate in a similar manner to the system 60 F of FIG. 6 , including a packaged integrated circuit 100 I with mold compound 50 , a die 200 , a pad 310 I, and a lead frame 300 I.
  • the system 60 I of FIG. 9 includes a lead frame 700 I above the lead frame 300 I.
  • the lead frame 700 I in a manner similar to the lead frame 500 C of FIG. 3 may generally be designed to dissipate thermal energy as opposed to carrying a signal.
  • the lead frame 700 I may be made of a variety of thermally conductive materials including, but not limited to, copper alloys, nickel alloys, aluminum, other suitable materials, or combinations of the preceding.
  • Lead frame 700 I may be thermally and mechanically coupled to the die 200 using an attachment material 220 .
  • a variety of different attachment materials 220 may be utilized, including but not limited to a liquid die attach, film tape-type die attach, thermal conductive die attach material, or other suitable materials.
  • the attachment materials 220 in some embodiments may also act as a thermal expansion stress relief between the die 200 and the lead frame 700 I. Coupled between the die 200 and the lead frame 300 I in this embodiment is also a wire bond 210 that may be utilized to facilitate the transfer of electrical signaling.
  • the attachment material 220 may be non-electrically conductive, to avoid interference with the operation of the features on the die 200 .
  • thermal energy may be dissipated from the die 200 through the attachment material 220 to the lead frame 700 I where the thermal energy may either be transferred to the air, other devices, or other suitable materials.
  • the lead frame 700 I may extend beyond the surface of the mold compound 50 while in other embodiment the lead frame 700 I may not extend beyond the surface of the mold compound 50 .
  • the lead frame 700 I may be added to the top side of the die 200 in a variety of manners.
  • the lead frame 700 I may be added after bonding of the wire bonds 220 , but prior to molding, utilizing external clamping features to hold the lead frames 300 I, 700 I together.
  • Other techniques may additionally be utilized as will be recognized by one of ordinary skill in the art.
  • FIG. 10 is a cut away top view of a system 60 J, according to yet another embodiment of the invention. A portion of the mold compound 50 has been removed to illustrate features of the system 60 J.
  • the system 60 J of FIG. 10 may operate in a similar manner to the system 60 I of FIG. 9 , including a packaged integrated circuit 100 J with mold compound 50 , a die 200 , a pad 310 J, a lead frame 300 J, a lead frame 700 J, attachment material 220 and wire bonds 210 .
  • FIG. 10 shows also a configuration of leads 330 J.
  • FIG. 11 is a side cross-sectional view of a system 60 K, according to yet another embodiment of the invention.
  • the system 60 K of FIG. 11 may operate in a similar manner to the to features described in system 60 H of FIG. 8 and system 60 I of FIG. 9 , including a packaged integrated circuit 100 K with mold compound 50 , a pad 310 K, a lead frame 300 K, a lead frame 500 K, wings 520 K, a lead frame 700 K, attachment material 220 , and a thermal dissipation system 400 . Similar to description of FIGS. 2, 5 , and 7 , any of a variety of thermal dissipation systems may be utilized, including in some embodiments metallic configuration or configurations that utilize fluid.
  • the thermal dissipation system 400 is shown as a heat sink 410 K with cooling fins 412 K and a contact pieces 414 K.
  • thermal energy may be dissipated from the die 200 through the pad 310 K, the lead frame 500 K, and the wings 520 K, to the heat sink 410 K.
  • thermal energy may be dissipated from the die 200 through the attachment materials 220 and lead frame 700 I, and contact pieces 416 K of the heat sink 410 K.
  • Yet further paths of thermal dissipation may include dissipation from the die 200 through the attachment materials 220 , the lead frame 700 I, and the wings 520 K to the heat sink 410 K.
  • the cooling fins 412 K may facilitate transfer of the thermal energy to the air, other devices, or other suitable materials.
  • FIGS. 12A, 12B , and 12 C are cut away top views illustrating a production of a system 60 L, according to an embodiment of the invention.
  • a portion of mold compound 50 has been removed to illustrate features of system 60 L.
  • FIG. 12A generally shows a portion of the system 60 L after a molding process with mold compound 50 .
  • Lead frame 300 L includes a wing 320 L and lead frame 500 L includes a wing 520 L.
  • FIG. 12B shows the system 60 L after removing the wing 320 L of the lead frame 300 L to reveal an opening 522 L in the lead frame 500 L. Although such a removal of the wing 320 L is described in this embodiment, in other embodiments the wing 320 L may be retained.
  • FIG. 12C shows the system 60 L after a bending of the wing 520 L up. Yet other methods of configuration may be utilized as will become apparent to one of ordinary skill in the art.
  • FIGS. 13A and 13B illustrate a configuration of a coupling of a thermal dissipation system 400 such as a heat sink 410 M to a packaged integrated circuit 100 M.
  • a thermal dissipation system 400 such as a heat sink 410 M to a packaged integrated circuit 100 M.
  • an angled portion 402 M of the heat sink 410 M is uni-directionally latched in an opening 522 M of the lead frame 500 M.
  • the opening 522 M may generally be formed by the bending up of the wing 520 M in the manner described above with reference to FIG. 12B and FIG. 12C .
  • a heat sink 410 M may be attached to portions of the packaged integrated circuit in a variety of other manners.
  • the heat sink 410 M may be attached with thermal epoxy or mechanically held with thermal grease. Yet other manners, techniques, and methods may be utilized.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Non-Reversible Transmitting Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
US11/074,278 2004-12-17 2005-03-07 Multi lead frame power package Abandoned US20060131734A1 (en)

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US11/074,278 US20060131734A1 (en) 2004-12-17 2005-03-07 Multi lead frame power package
TW094145143A TWI295837B (en) 2004-12-17 2005-12-19 Multi lead frame power package
US11/831,458 US20080020517A1 (en) 2004-12-17 2007-07-31 Multi Lead Frame Power Package
US12/573,196 US8053876B2 (en) 2004-12-17 2009-10-05 Multi lead frame power package

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US63693504P 2004-12-17 2004-12-17
US11/074,278 US20060131734A1 (en) 2004-12-17 2005-03-07 Multi lead frame power package

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US11/074,278 Abandoned US20060131734A1 (en) 2004-12-17 2005-03-07 Multi lead frame power package
US11/831,458 Abandoned US20080020517A1 (en) 2004-12-17 2007-07-31 Multi Lead Frame Power Package
US12/573,196 Expired - Lifetime US8053876B2 (en) 2004-12-17 2009-10-05 Multi lead frame power package

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US12/573,196 Expired - Lifetime US8053876B2 (en) 2004-12-17 2009-10-05 Multi lead frame power package

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070026567A1 (en) * 2005-06-01 2007-02-01 Gottfried Beer Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof
WO2010113120A1 (fr) * 2009-04-02 2010-10-07 Koninklijke Philips Electronics N.V. Système de circuit intégré présentant une construction de cadre d'isolation thermique et procédé de production d'un tel système de circuit intégré
US20180342784A1 (en) * 2017-05-24 2018-11-29 Plume Design, Inc. Antenna structure incorporated in heat spreader, heat sink, and cooling fins
US10224268B1 (en) * 2016-11-28 2019-03-05 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
US10903149B2 (en) * 2017-02-06 2021-01-26 Fuji Electric Co., Ltd. Semiconductor module, electric vehicle, and power control unit
US11081428B2 (en) 2019-08-10 2021-08-03 Texas Instruments Incorporated Electronic device with three dimensional thermal pad
US11756861B2 (en) * 2020-03-31 2023-09-12 Cisco Technology, Inc. Thermal packaging with fan out wafer level processing

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8514031B2 (en) 2004-12-17 2013-08-20 Ems Technologies, Inc. Integrated circulators sharing a continuous circuit
US8269248B2 (en) * 2009-03-02 2012-09-18 Thompson Joseph B Light emitting assemblies and portions thereof
EP2487750A1 (fr) * 2011-02-10 2012-08-15 EMS Technologies, Inc. Circulateurs intégrés partageant un circuit continu
US8637887B2 (en) * 2012-05-08 2014-01-28 Advanced Semiconductor Engineering, Inc. Thermally enhanced semiconductor packages and related methods
US9230878B2 (en) * 2013-04-12 2016-01-05 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Integrated circuit package for heat dissipation
US9443785B2 (en) 2014-12-19 2016-09-13 Advanced Semiconductor Engineering, Inc. Semiconductor package
EP3693992B1 (fr) * 2019-02-11 2024-08-07 Nexperia B.V. Dispositif à semiconducteurs à montage en surface et procédé de fabrication
US12224218B2 (en) * 2022-02-11 2025-02-11 Wolfspeed, Inc. Semiconductor packages with increased power handling
USD1056862S1 (en) 2022-08-24 2025-01-07 Wolfspeed, Inc. Semiconductor package

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065281A (en) * 1990-02-12 1991-11-12 Rogers Corporation Molded integrated circuit package incorporating heat sink
US5318926A (en) * 1993-02-01 1994-06-07 Dlugokecki Joseph J Method for packaging an integrated circuit using a reconstructed plastic package
US5770479A (en) * 1996-01-11 1998-06-23 Micron Technology, Inc. Bonding support for leads-over-chip process
US5939781A (en) * 1996-09-26 1999-08-17 Texas Instruments Incorporated Thermally enhanced integrated circuit packaging system
US5979743A (en) * 1994-06-08 1999-11-09 Texas Instruments Incorporated Method for making an IC device using a single-headed bonder
US6307755B1 (en) * 1999-05-27 2001-10-23 Richard K. Williams Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die
US6423623B1 (en) * 1998-06-09 2002-07-23 Fairchild Semiconductor Corporation Low Resistance package for semiconductor devices
US6711904B1 (en) * 2003-03-06 2004-03-30 Texas Instruments Incorporated Active thermal management of semiconductor devices
US6897567B2 (en) * 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US7012277B2 (en) * 2003-01-06 2006-03-14 Sharp Kabushiki Kaisha Semiconductor light emitting device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3636479A (en) * 1970-08-19 1972-01-18 Microwave Associates West Inc Microwave strip transmission line circulator
JPS598403A (ja) * 1982-07-06 1984-01-17 Nec Corp マイクロストリツプ線路サ−キユレ−タ
US4761621A (en) * 1986-06-30 1988-08-02 Motorola, Inc. Circulator/isolator resonator
US5446620A (en) * 1990-08-01 1995-08-29 Staktek Corporation Ultra high density integrated circuit packages
US5377077A (en) * 1990-08-01 1994-12-27 Staktek Corporation Ultra high density integrated circuit packages method and apparatus
MY120226A (en) * 1992-05-25 2005-09-30 Hitachi Ulsi Eng Corp Thin type semiconductor device, module structure using the device and method of mounting the device on board.
US5929513A (en) * 1994-08-16 1999-07-27 Fujitsu Limited Semiconductor device and heat sink used therein
US6184575B1 (en) * 1994-08-26 2001-02-06 National Semiconductor Corporation Ultra-thin composite package for integrated circuits
US6025642A (en) * 1995-08-17 2000-02-15 Staktek Corporation Ultra high density integrated circuit packages
US5796162A (en) * 1996-09-17 1998-08-18 Greatek Technology Co., Ltd. Frames locking method for packaging semiconductor chip
TW342142U (en) * 1997-05-13 1998-10-01 Caesar Technology Inc A super slim IC structure
KR100285664B1 (ko) * 1998-05-15 2001-06-01 박종섭 스택패키지및그제조방법
JP3206577B2 (ja) * 1999-01-08 2001-09-10 日本電気株式会社 複合基板型の非可逆回路素子及びその製造方法
US6303981B1 (en) * 1999-09-01 2001-10-16 Micron Technology, Inc. Semiconductor package having stacked dice and leadframes and method of fabrication
US6541856B2 (en) * 2001-06-06 2003-04-01 Micron Technology, Inc. Thermally enhanced high density semiconductor package
US6946856B1 (en) * 2004-06-24 2005-09-20 Texas Instruments Incorporated Thermal testing method for integrated circuit chips and packages

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5065281A (en) * 1990-02-12 1991-11-12 Rogers Corporation Molded integrated circuit package incorporating heat sink
US5318926A (en) * 1993-02-01 1994-06-07 Dlugokecki Joseph J Method for packaging an integrated circuit using a reconstructed plastic package
US5979743A (en) * 1994-06-08 1999-11-09 Texas Instruments Incorporated Method for making an IC device using a single-headed bonder
US5770479A (en) * 1996-01-11 1998-06-23 Micron Technology, Inc. Bonding support for leads-over-chip process
US5939781A (en) * 1996-09-26 1999-08-17 Texas Instruments Incorporated Thermally enhanced integrated circuit packaging system
US6423623B1 (en) * 1998-06-09 2002-07-23 Fairchild Semiconductor Corporation Low Resistance package for semiconductor devices
US6307755B1 (en) * 1999-05-27 2001-10-23 Richard K. Williams Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die
US6897567B2 (en) * 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US7012277B2 (en) * 2003-01-06 2006-03-14 Sharp Kabushiki Kaisha Semiconductor light emitting device
US6711904B1 (en) * 2003-03-06 2004-03-30 Texas Instruments Incorporated Active thermal management of semiconductor devices

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070026567A1 (en) * 2005-06-01 2007-02-01 Gottfried Beer Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof
US20080105966A1 (en) * 2005-06-01 2008-05-08 Infineon Technologies Ag Semiconductor Module Including Components in Plastic Casing
US7692588B2 (en) 2005-06-01 2010-04-06 Infineon Technologies Ag Semiconductor module comprising components for microwave engineering in plastic casing and method for the production thereof
US7863728B2 (en) * 2005-06-01 2011-01-04 Infineon Technologies Ag Semiconductor module including components in plastic casing
WO2010113120A1 (fr) * 2009-04-02 2010-10-07 Koninklijke Philips Electronics N.V. Système de circuit intégré présentant une construction de cadre d'isolation thermique et procédé de production d'un tel système de circuit intégré
US10224268B1 (en) * 2016-11-28 2019-03-05 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
US10566270B2 (en) 2016-11-28 2020-02-18 CoolStar Technology, Inc. Enhanced thermal transfer in a semiconductor structure
US10903149B2 (en) * 2017-02-06 2021-01-26 Fuji Electric Co., Ltd. Semiconductor module, electric vehicle, and power control unit
US20180342784A1 (en) * 2017-05-24 2018-11-29 Plume Design, Inc. Antenna structure incorporated in heat spreader, heat sink, and cooling fins
US10431868B2 (en) * 2017-05-24 2019-10-01 Plume Design, Inc. Antenna structure incorporated in heat spreader, heat sink, and cooling fins
US11081428B2 (en) 2019-08-10 2021-08-03 Texas Instruments Incorporated Electronic device with three dimensional thermal pad
US11756861B2 (en) * 2020-03-31 2023-09-12 Cisco Technology, Inc. Thermal packaging with fan out wafer level processing

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US20100019361A1 (en) 2010-01-28
WO2006066254A9 (fr) 2006-08-31
TW200635010A (en) 2006-10-01
TWI295837B (en) 2008-04-11
US8053876B2 (en) 2011-11-08
WO2006066254A1 (fr) 2006-06-22
US20080020517A1 (en) 2008-01-24

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