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US20060029325A1 - Thermally isolating optical devices - Google Patents

Thermally isolating optical devices Download PDF

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Publication number
US20060029325A1
US20060029325A1 US11/245,915 US24591505A US2006029325A1 US 20060029325 A1 US20060029325 A1 US 20060029325A1 US 24591505 A US24591505 A US 24591505A US 2006029325 A1 US2006029325 A1 US 2006029325A1
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United States
Prior art keywords
core
thermo
semiconductor substrate
opening
upper cladding
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
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US11/245,915
Inventor
Behzad Fardi
Farshid Adibi
Chaoyang Li
Anirban Bandyopadhyay
Mahesh Junnarkab
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Individual
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Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Individual filed Critical Individual
Priority to US11/245,915 priority Critical patent/US20060029325A1/en
Publication of US20060029325A1 publication Critical patent/US20060029325A1/en
Abandoned legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/025Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/0147Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on thermo-optic effects

Definitions

  • This invention relates generally to optical components including those used in optical communication networks.
  • a waveguide core may extend across a semiconductor substrate.
  • the core may be covered by an upper cladding and may be positioned over a lower cladding.
  • the core may define an optical signal path.
  • the cladding may have a lower refractive index than the core.
  • the optical characteristics of the core may be thermally modified.
  • thermo-optic devices may be operated through the application of heat.
  • the refractive index of an optical device may be changed by heating.
  • Thermo-optic switches may be used in Mach-Zehnder interferometers and directional couplers, as two examples.
  • thermo-optic device the more heat that is dissipated by the thermo-optic device, the more the power requirements of the overall component. It is desirable to reduce the heat transfer to only that needed to achieve the thermo-optic effect.
  • thermo-optic devices there is a need for ways to reduce the amount of heat loss in thermo-optic devices.
  • FIG. 1 is an enlarged cross-sectional view of one embodiment of the present invention at an early stage of manufacture
  • FIG. 2 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
  • FIG. 3 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
  • FIG. 4 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
  • FIG. 5 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture.
  • FIG. 6 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture.
  • a waveguide core 12 may be defined on a lower cladding 11 over a semiconductor substrate 10 .
  • the core 12 may be part of a planar lightwave circuit.
  • the core 12 and lower cladding 11 may, in turn, be covered by an upper cladding 14 as shown in FIG. 2 .
  • an electric resistance heater 16 may be defined over the upper cladding 14 atop the core 12 .
  • the heater 16 may be a more resistive material coupled to a source of power by a less resistive material.
  • the electrical resistance heater 16 is selectively operable to change the optical properties of the core 12 in the vicinity of the heater 16 .
  • a thermo-optic switch may be formed.
  • a pair of trenches 18 may be formed on either side of the heater 16 and core 12 .
  • the trenches 18 may be spaced from the core 12 to leave protective upper cladding 14 around the core 12 , in one embodiment.
  • the trenches 18 may extend through the upper cladding 14 and the lower cladding 11 down to the semiconductor substrate 10 in one embodiment of the present invention.
  • a thermo-optic device 26 is defined between the trenches 18 , in one embodiment.
  • an isotropic etch may be implemented into the substrate 10 through the trenches 18 to form the undercut regions 20 , in one embodiment of the present invention, shown in FIG. 5 .
  • the etchant is more selective of the substrate 10 material and is less selective of the cladding material 11 and 14 . Because of the isotropic nature of the etching, the etching extends under the lower cladding 11 on opposed sides of each trench 18 .
  • isotropic it is intended to refer to an etchant that etches outwardly under a mask that defines an opening for the etchant to etch an underlying material.
  • the resulting regions 20 extend under the structure that includes the core 12 and the heater 16 .
  • One result of this under-etching is to reduce the amount of substrate 10 material underneath the core 12 and the heater 16 .
  • the trenches 18 may guide the anisotropic etching from the bottoms of the regions 20 .
  • the etchant is more selective of the substrate 10 than of the cladding 11 or 14 .
  • an anisotropically etched trench 22 extends below the regions 20 formed by isotropic etching.
  • a substantial portion of the substrate 10 material underneath the core 12 and the heater 16 is removed, leaving a relatively thin pillar 24 of substrate 10 .
  • the inventors of the present invention have determined that a substantial portion of the heat loss from heater 16 occurs through the semiconductor substrate 10 . By reducing the amount of available substrate 10 underneath the heater 16 , this heat loss may be reduced. The heat loss may increase the power needs of the device and dispersed heat may adversely affect the optical properties of surrounding components.
  • the regions 20 and the trenches 22 may be filled with a thermally isolating material.
  • the trenches 18 may also be filled or covered with a thermally isolating material.

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Integrated Circuits (AREA)

Abstract

A thermo-optic device may be formed with trenches that undercut the substrate beneath the thermo-optic device. Through the removal of the underlying substrate, the heat dissipation of the thermo-optic device may be reduced. This may reduce the thermal budget of the device, reducing the power requirements for operating the device in some embodiments.

Description

    CROSS-REFERENCE TO RELATED APPLICATIONS
  • This application is a continuation of U.S. patent application Ser. No. 10/465,210, filed on Jun. 19, 2003.
  • BACKGROUND
  • This invention relates generally to optical components including those used in optical communication networks.
  • In optical communication networks, a waveguide core may extend across a semiconductor substrate. The core may be covered by an upper cladding and may be positioned over a lower cladding. The core may define an optical signal path. The cladding may have a lower refractive index than the core.
  • In some cases the optical characteristics of the core may be thermally modified. For example, thermo-optic devices may be operated through the application of heat. The refractive index of an optical device may be changed by heating. Thermo-optic switches may be used in Mach-Zehnder interferometers and directional couplers, as two examples.
  • Generally, the more heat that is dissipated by the thermo-optic device, the more the power requirements of the overall component. It is desirable to reduce the heat transfer to only that needed to achieve the thermo-optic effect.
  • Thus, there is a need for ways to reduce the amount of heat loss in thermo-optic devices.
  • BRIEF DESCRIPTION OF THE DRAWINGS
  • FIG. 1 is an enlarged cross-sectional view of one embodiment of the present invention at an early stage of manufacture;
  • FIG. 2 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture;
  • FIG. 3 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture;
  • FIG. 4 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture;
  • FIG. 5 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture; and
  • FIG. 6 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture.
  • DETAILED DESCRIPTION
  • Referring to FIG. 1, a waveguide core 12 may be defined on a lower cladding 11 over a semiconductor substrate 10. In one embodiment, the core 12 may be part of a planar lightwave circuit. The core 12 and lower cladding 11 may, in turn, be covered by an upper cladding 14 as shown in FIG. 2.
  • Referring to FIG. 3, an electric resistance heater 16 may be defined over the upper cladding 14 atop the core 12. The heater 16 may be a more resistive material coupled to a source of power by a less resistive material. The electrical resistance heater 16 is selectively operable to change the optical properties of the core 12 in the vicinity of the heater 16. For example, in one embodiment, a thermo-optic switch may be formed.
  • Referring to FIG. 4, a pair of trenches 18 may be formed on either side of the heater 16 and core 12. The trenches 18 may be spaced from the core 12 to leave protective upper cladding 14 around the core 12, in one embodiment. The trenches 18 may extend through the upper cladding 14 and the lower cladding 11 down to the semiconductor substrate 10 in one embodiment of the present invention. A thermo-optic device 26 is defined between the trenches 18, in one embodiment.
  • Using the thermo-optic device 26 as a mask, an isotropic etch may be implemented into the substrate 10 through the trenches 18 to form the undercut regions 20, in one embodiment of the present invention, shown in FIG. 5. The etchant is more selective of the substrate 10 material and is less selective of the cladding material 11 and 14. Because of the isotropic nature of the etching, the etching extends under the lower cladding 11 on opposed sides of each trench 18. By the term isotropic, it is intended to refer to an etchant that etches outwardly under a mask that defines an opening for the etchant to etch an underlying material.
  • The resulting regions 20 extend under the structure that includes the core 12 and the heater 16. One result of this under-etching is to reduce the amount of substrate 10 material underneath the core 12 and the heater 16.
  • Referring to FIG. 6, the trenches 18 may guide the anisotropic etching from the bottoms of the regions 20. The etchant is more selective of the substrate 10 than of the cladding 11 or 14. As a result, an anisotropically etched trench 22 extends below the regions 20 formed by isotropic etching. A substantial portion of the substrate 10 material underneath the core 12 and the heater 16 is removed, leaving a relatively thin pillar 24 of substrate 10.
  • The inventors of the present invention have determined that a substantial portion of the heat loss from heater 16 occurs through the semiconductor substrate 10. By reducing the amount of available substrate 10 underneath the heater 16, this heat loss may be reduced. The heat loss may increase the power needs of the device and dispersed heat may adversely affect the optical properties of surrounding components.
  • In some embodiments, the regions 20 and the trenches 22 may be filled with a thermally isolating material. Also, in some embodiments, the trenches 18 may also be filled or covered with a thermally isolating material.
  • While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
  • What is claimed is:

Claims (9)

1. A method comprising:
forming a thermo-optic device on a semiconductor substrate; and
removing a portion of the semiconductor substrate underneath the thermo-optic device.
2. The method of claim 1 wherein removing a portion includes using an isotropic etch.
3. The method of claim 2 including using an isotropic etch to form a first opening and forming a second opening through the first opening.
4. The method of claim 3 including forming the second opening using an anisotropic etch.
5. The method of claim 1 including forming a waveguide core on the semiconductor substrate and covering said core with an upper cladding.
6. The method of claim 5 including forming an opening through said upper cladding on either side of said core.
7. The method of claim 6 including leaving a portion of said upper cladding surrounding said core.
8. The method of claim 6 including forming a resistance heater over said upper cladding over said core.
9. The method of claim 1 including removing a portion of the semiconductor substrate on two opposed sides of said thermo-optic device.
US11/245,915 2003-06-19 2005-10-07 Thermally isolating optical devices Abandoned US20060029325A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US11/245,915 US20060029325A1 (en) 2003-06-19 2005-10-07 Thermally isolating optical devices

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/465,210 US6983086B2 (en) 2003-06-19 2003-06-19 Thermally isolating optical devices
US11/245,915 US20060029325A1 (en) 2003-06-19 2005-10-07 Thermally isolating optical devices

Related Parent Applications (1)

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US10/465,210 Continuation US6983086B2 (en) 2003-06-19 2003-06-19 Thermally isolating optical devices

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US20060029325A1 true US20060029325A1 (en) 2006-02-09

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US11/245,915 Abandoned US20060029325A1 (en) 2003-06-19 2005-10-07 Thermally isolating optical devices

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EP (1) EP1634117A1 (en)
CN (1) CN1601384B (en)
AU (1) AU2003304334A1 (en)
TW (1) TWI260436B (en)
WO (2) WO2005006063A1 (en)

Cited By (10)

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US20080014534A1 (en) * 2006-07-11 2008-01-17 Massachusetts Institute Of Technology Microphotonic maskless lithography
US20080044184A1 (en) * 2006-08-16 2008-02-21 Milos Popovic Balanced bypass circulators and folded universally-balanced interferometers
US20090142019A1 (en) * 2007-10-22 2009-06-04 Massachusetts Institute Of Technology Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US20090274418A1 (en) * 2008-05-01 2009-11-05 Massachusetts Institute Of Technology Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal
US20100209038A1 (en) * 2007-03-26 2010-08-19 Massachusetts Institute Of Technology Hitless tuning and switching of optical resonator amplitude and phase responses
US7853108B2 (en) 2006-12-29 2010-12-14 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
US8032027B2 (en) 2005-07-25 2011-10-04 Massachusetts Institute Of Technology Wide free-spectral-range, widely tunable and hitless-switchable optical channel add-drop filters
US8340478B2 (en) 2008-12-03 2012-12-25 Massachusetts Institute Of Technology Resonant optical modulators
US8483521B2 (en) 2009-05-29 2013-07-09 Massachusetts Institute Of Technology Cavity dynamics compensation in resonant optical modulators
US10777722B2 (en) 2012-06-15 2020-09-15 Micron Technology, Inc. Methods and apparatus providing thermal isolation of photonic devices

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JP2005156855A (en) * 2003-11-25 2005-06-16 Nec Corp Multi-channel mach-zehnder interferometer type optical circuit
KR101210090B1 (en) * 2006-03-03 2012-12-07 엘지이노텍 주식회사 Metal core printed circuit board and light-emitting diode packaging method thereof
JP2009020356A (en) * 2007-07-12 2009-01-29 Nec Corp Silicon structure
US9005458B2 (en) 2013-02-26 2015-04-14 Micron Technology, Inc. Photonic device structure and method of manufacture
US9448422B2 (en) 2014-03-05 2016-09-20 Huawei Technologies Co., Ltd. Integrated thermo-optic switch with thermally isolated and heat restricting pillars
CN104714311B (en) * 2015-04-09 2018-07-31 上海新微技术研发中心有限公司 MEMS thermo-optic tunable filter with low optical loss
JP6600513B2 (en) * 2015-09-04 2019-10-30 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
NL2017576A (en) * 2015-10-06 2017-04-11 Asml Netherlands Bv Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus
EP3506000B1 (en) 2017-12-29 2020-10-07 IMEC vzw Iii-v semiconductor waveguide nanoridge structure
GB2571269B (en) 2018-02-21 2021-07-07 Rockley Photonics Ltd Optoelectronic device
GB2595588B (en) * 2018-02-21 2022-08-31 Rockley Photonics Ltd Optoelectronic device
GB2588313B (en) * 2018-05-11 2022-10-05 Rockley Photonics Ltd Thermo-optical phase shift with ridged optical waveguide
GB2587071A (en) 2019-06-13 2021-03-17 Rockley Photonics Ltd Multilayer metal stack heater
US10983412B1 (en) * 2019-11-05 2021-04-20 Globalfoundries U.S. Inc. Silicon photonic components fabricated using a bulk substrate
US11226506B2 (en) * 2020-03-17 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Heater structure with a gas-filled isolation structure to improve thermal efficiency in a modulator device

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Cited By (20)

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Publication number Priority date Publication date Assignee Title
US8032027B2 (en) 2005-07-25 2011-10-04 Massachusetts Institute Of Technology Wide free-spectral-range, widely tunable and hitless-switchable optical channel add-drop filters
US20080014534A1 (en) * 2006-07-11 2008-01-17 Massachusetts Institute Of Technology Microphotonic maskless lithography
US8105758B2 (en) 2006-07-11 2012-01-31 Massachusetts Institute Of Technology Microphotonic maskless lithography
US20080044184A1 (en) * 2006-08-16 2008-02-21 Milos Popovic Balanced bypass circulators and folded universally-balanced interferometers
US8111994B2 (en) 2006-08-16 2012-02-07 Massachusetts Institute Of Technology Balanced bypass circulators and folded universally-balanced interferometers
US7853108B2 (en) 2006-12-29 2010-12-14 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
US8068706B2 (en) 2006-12-29 2011-11-29 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
US20110026879A1 (en) * 2006-12-29 2011-02-03 Massachusetts Institute Of Technology Fabrication-tolerant waveguides and resonators
US8655114B2 (en) 2007-03-26 2014-02-18 Massachusetts Institute Of Technology Hitless tuning and switching of optical resonator amplitude and phase responses
US20100209038A1 (en) * 2007-03-26 2010-08-19 Massachusetts Institute Of Technology Hitless tuning and switching of optical resonator amplitude and phase responses
US8116603B2 (en) 2007-10-22 2012-02-14 Massachusetts Institute Of Technology Low-loss Bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US7903909B2 (en) 2007-10-22 2011-03-08 Massachusetts Institute Of Technology Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US20110158584A1 (en) * 2007-10-22 2011-06-30 Massachusetts Institute Of Technology Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US20090142019A1 (en) * 2007-10-22 2009-06-04 Massachusetts Institute Of Technology Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays
US20090274418A1 (en) * 2008-05-01 2009-11-05 Massachusetts Institute Of Technology Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal
US7920770B2 (en) 2008-05-01 2011-04-05 Massachusetts Institute Of Technology Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal
US8340478B2 (en) 2008-12-03 2012-12-25 Massachusetts Institute Of Technology Resonant optical modulators
US8483521B2 (en) 2009-05-29 2013-07-09 Massachusetts Institute Of Technology Cavity dynamics compensation in resonant optical modulators
US10777722B2 (en) 2012-06-15 2020-09-15 Micron Technology, Inc. Methods and apparatus providing thermal isolation of photonic devices
US11217737B2 (en) 2012-06-15 2022-01-04 Micron Technology, Inc. Methods and apparatus providing thermal isolation of photonic devices

Also Published As

Publication number Publication date
WO2005001558A1 (en) 2005-01-06
US20040258344A1 (en) 2004-12-23
CN1601384A (en) 2005-03-30
TW200500664A (en) 2005-01-01
TWI260436B (en) 2006-08-21
AU2003304334A1 (en) 2005-01-28
WO2005006063A1 (en) 2005-01-20
US6983086B2 (en) 2006-01-03
EP1634117A1 (en) 2006-03-15
CN1601384B (en) 2010-05-26

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