US20060029325A1 - Thermally isolating optical devices - Google Patents
Thermally isolating optical devices Download PDFInfo
- Publication number
- US20060029325A1 US20060029325A1 US11/245,915 US24591505A US2006029325A1 US 20060029325 A1 US20060029325 A1 US 20060029325A1 US 24591505 A US24591505 A US 24591505A US 2006029325 A1 US2006029325 A1 US 2006029325A1
- Authority
- US
- United States
- Prior art keywords
- core
- thermo
- semiconductor substrate
- opening
- upper cladding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
- G02F1/025—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/0147—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on thermo-optic effects
Definitions
- This invention relates generally to optical components including those used in optical communication networks.
- a waveguide core may extend across a semiconductor substrate.
- the core may be covered by an upper cladding and may be positioned over a lower cladding.
- the core may define an optical signal path.
- the cladding may have a lower refractive index than the core.
- the optical characteristics of the core may be thermally modified.
- thermo-optic devices may be operated through the application of heat.
- the refractive index of an optical device may be changed by heating.
- Thermo-optic switches may be used in Mach-Zehnder interferometers and directional couplers, as two examples.
- thermo-optic device the more heat that is dissipated by the thermo-optic device, the more the power requirements of the overall component. It is desirable to reduce the heat transfer to only that needed to achieve the thermo-optic effect.
- thermo-optic devices there is a need for ways to reduce the amount of heat loss in thermo-optic devices.
- FIG. 1 is an enlarged cross-sectional view of one embodiment of the present invention at an early stage of manufacture
- FIG. 2 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
- FIG. 3 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
- FIG. 4 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture
- FIG. 5 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture.
- FIG. 6 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture.
- a waveguide core 12 may be defined on a lower cladding 11 over a semiconductor substrate 10 .
- the core 12 may be part of a planar lightwave circuit.
- the core 12 and lower cladding 11 may, in turn, be covered by an upper cladding 14 as shown in FIG. 2 .
- an electric resistance heater 16 may be defined over the upper cladding 14 atop the core 12 .
- the heater 16 may be a more resistive material coupled to a source of power by a less resistive material.
- the electrical resistance heater 16 is selectively operable to change the optical properties of the core 12 in the vicinity of the heater 16 .
- a thermo-optic switch may be formed.
- a pair of trenches 18 may be formed on either side of the heater 16 and core 12 .
- the trenches 18 may be spaced from the core 12 to leave protective upper cladding 14 around the core 12 , in one embodiment.
- the trenches 18 may extend through the upper cladding 14 and the lower cladding 11 down to the semiconductor substrate 10 in one embodiment of the present invention.
- a thermo-optic device 26 is defined between the trenches 18 , in one embodiment.
- an isotropic etch may be implemented into the substrate 10 through the trenches 18 to form the undercut regions 20 , in one embodiment of the present invention, shown in FIG. 5 .
- the etchant is more selective of the substrate 10 material and is less selective of the cladding material 11 and 14 . Because of the isotropic nature of the etching, the etching extends under the lower cladding 11 on opposed sides of each trench 18 .
- isotropic it is intended to refer to an etchant that etches outwardly under a mask that defines an opening for the etchant to etch an underlying material.
- the resulting regions 20 extend under the structure that includes the core 12 and the heater 16 .
- One result of this under-etching is to reduce the amount of substrate 10 material underneath the core 12 and the heater 16 .
- the trenches 18 may guide the anisotropic etching from the bottoms of the regions 20 .
- the etchant is more selective of the substrate 10 than of the cladding 11 or 14 .
- an anisotropically etched trench 22 extends below the regions 20 formed by isotropic etching.
- a substantial portion of the substrate 10 material underneath the core 12 and the heater 16 is removed, leaving a relatively thin pillar 24 of substrate 10 .
- the inventors of the present invention have determined that a substantial portion of the heat loss from heater 16 occurs through the semiconductor substrate 10 . By reducing the amount of available substrate 10 underneath the heater 16 , this heat loss may be reduced. The heat loss may increase the power needs of the device and dispersed heat may adversely affect the optical properties of surrounding components.
- the regions 20 and the trenches 22 may be filled with a thermally isolating material.
- the trenches 18 may also be filled or covered with a thermally isolating material.
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A thermo-optic device may be formed with trenches that undercut the substrate beneath the thermo-optic device. Through the removal of the underlying substrate, the heat dissipation of the thermo-optic device may be reduced. This may reduce the thermal budget of the device, reducing the power requirements for operating the device in some embodiments.
Description
- This application is a continuation of U.S. patent application Ser. No. 10/465,210, filed on Jun. 19, 2003.
- This invention relates generally to optical components including those used in optical communication networks.
- In optical communication networks, a waveguide core may extend across a semiconductor substrate. The core may be covered by an upper cladding and may be positioned over a lower cladding. The core may define an optical signal path. The cladding may have a lower refractive index than the core.
- In some cases the optical characteristics of the core may be thermally modified. For example, thermo-optic devices may be operated through the application of heat. The refractive index of an optical device may be changed by heating. Thermo-optic switches may be used in Mach-Zehnder interferometers and directional couplers, as two examples.
- Generally, the more heat that is dissipated by the thermo-optic device, the more the power requirements of the overall component. It is desirable to reduce the heat transfer to only that needed to achieve the thermo-optic effect.
- Thus, there is a need for ways to reduce the amount of heat loss in thermo-optic devices.
-
FIG. 1 is an enlarged cross-sectional view of one embodiment of the present invention at an early stage of manufacture; -
FIG. 2 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture; -
FIG. 3 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture; -
FIG. 4 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture; -
FIG. 5 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture; and -
FIG. 6 is an enlarged cross-sectional view of one embodiment of the present invention at a subsequent stage of manufacture. - Referring to
FIG. 1 , awaveguide core 12 may be defined on alower cladding 11 over asemiconductor substrate 10. In one embodiment, thecore 12 may be part of a planar lightwave circuit. Thecore 12 andlower cladding 11 may, in turn, be covered by anupper cladding 14 as shown inFIG. 2 . - Referring to
FIG. 3 , anelectric resistance heater 16 may be defined over theupper cladding 14 atop thecore 12. Theheater 16 may be a more resistive material coupled to a source of power by a less resistive material. Theelectrical resistance heater 16 is selectively operable to change the optical properties of thecore 12 in the vicinity of theheater 16. For example, in one embodiment, a thermo-optic switch may be formed. - Referring to
FIG. 4 , a pair oftrenches 18 may be formed on either side of theheater 16 andcore 12. Thetrenches 18 may be spaced from thecore 12 to leave protectiveupper cladding 14 around thecore 12, in one embodiment. Thetrenches 18 may extend through theupper cladding 14 and thelower cladding 11 down to thesemiconductor substrate 10 in one embodiment of the present invention. A thermo-optic device 26 is defined between thetrenches 18, in one embodiment. - Using the thermo-
optic device 26 as a mask, an isotropic etch may be implemented into thesubstrate 10 through thetrenches 18 to form theundercut regions 20, in one embodiment of the present invention, shown inFIG. 5 . The etchant is more selective of thesubstrate 10 material and is less selective of thecladding material lower cladding 11 on opposed sides of eachtrench 18. By the term isotropic, it is intended to refer to an etchant that etches outwardly under a mask that defines an opening for the etchant to etch an underlying material. - The
resulting regions 20 extend under the structure that includes thecore 12 and theheater 16. One result of this under-etching is to reduce the amount ofsubstrate 10 material underneath thecore 12 and theheater 16. - Referring to
FIG. 6 , thetrenches 18 may guide the anisotropic etching from the bottoms of theregions 20. The etchant is more selective of thesubstrate 10 than of thecladding etched trench 22 extends below theregions 20 formed by isotropic etching. A substantial portion of thesubstrate 10 material underneath thecore 12 and theheater 16 is removed, leaving a relativelythin pillar 24 ofsubstrate 10. - The inventors of the present invention have determined that a substantial portion of the heat loss from
heater 16 occurs through thesemiconductor substrate 10. By reducing the amount ofavailable substrate 10 underneath theheater 16, this heat loss may be reduced. The heat loss may increase the power needs of the device and dispersed heat may adversely affect the optical properties of surrounding components. - In some embodiments, the
regions 20 and thetrenches 22 may be filled with a thermally isolating material. Also, in some embodiments, thetrenches 18 may also be filled or covered with a thermally isolating material. - While the present invention has been described with respect to a limited number of embodiments, those skilled in the art will appreciate numerous modifications and variations therefrom. It is intended that the appended claims cover all such modifications and variations as fall within the true spirit and scope of this present invention.
- What is claimed is:
Claims (9)
1. A method comprising:
forming a thermo-optic device on a semiconductor substrate; and
removing a portion of the semiconductor substrate underneath the thermo-optic device.
2. The method of claim 1 wherein removing a portion includes using an isotropic etch.
3. The method of claim 2 including using an isotropic etch to form a first opening and forming a second opening through the first opening.
4. The method of claim 3 including forming the second opening using an anisotropic etch.
5. The method of claim 1 including forming a waveguide core on the semiconductor substrate and covering said core with an upper cladding.
6. The method of claim 5 including forming an opening through said upper cladding on either side of said core.
7. The method of claim 6 including leaving a portion of said upper cladding surrounding said core.
8. The method of claim 6 including forming a resistance heater over said upper cladding over said core.
9. The method of claim 1 including removing a portion of the semiconductor substrate on two opposed sides of said thermo-optic device.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/245,915 US20060029325A1 (en) | 2003-06-19 | 2005-10-07 | Thermally isolating optical devices |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/465,210 US6983086B2 (en) | 2003-06-19 | 2003-06-19 | Thermally isolating optical devices |
US11/245,915 US20060029325A1 (en) | 2003-06-19 | 2005-10-07 | Thermally isolating optical devices |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/465,210 Continuation US6983086B2 (en) | 2003-06-19 | 2003-06-19 | Thermally isolating optical devices |
Publications (1)
Publication Number | Publication Date |
---|---|
US20060029325A1 true US20060029325A1 (en) | 2006-02-09 |
Family
ID=33517469
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/465,210 Expired - Fee Related US6983086B2 (en) | 2003-06-19 | 2003-06-19 | Thermally isolating optical devices |
US11/245,915 Abandoned US20060029325A1 (en) | 2003-06-19 | 2005-10-07 | Thermally isolating optical devices |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/465,210 Expired - Fee Related US6983086B2 (en) | 2003-06-19 | 2003-06-19 | Thermally isolating optical devices |
Country Status (6)
Country | Link |
---|---|
US (2) | US6983086B2 (en) |
EP (1) | EP1634117A1 (en) |
CN (1) | CN1601384B (en) |
AU (1) | AU2003304334A1 (en) |
TW (1) | TWI260436B (en) |
WO (2) | WO2005006063A1 (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080014534A1 (en) * | 2006-07-11 | 2008-01-17 | Massachusetts Institute Of Technology | Microphotonic maskless lithography |
US20080044184A1 (en) * | 2006-08-16 | 2008-02-21 | Milos Popovic | Balanced bypass circulators and folded universally-balanced interferometers |
US20090142019A1 (en) * | 2007-10-22 | 2009-06-04 | Massachusetts Institute Of Technology | Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
US20090274418A1 (en) * | 2008-05-01 | 2009-11-05 | Massachusetts Institute Of Technology | Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal |
US20100209038A1 (en) * | 2007-03-26 | 2010-08-19 | Massachusetts Institute Of Technology | Hitless tuning and switching of optical resonator amplitude and phase responses |
US7853108B2 (en) | 2006-12-29 | 2010-12-14 | Massachusetts Institute Of Technology | Fabrication-tolerant waveguides and resonators |
US8032027B2 (en) | 2005-07-25 | 2011-10-04 | Massachusetts Institute Of Technology | Wide free-spectral-range, widely tunable and hitless-switchable optical channel add-drop filters |
US8340478B2 (en) | 2008-12-03 | 2012-12-25 | Massachusetts Institute Of Technology | Resonant optical modulators |
US8483521B2 (en) | 2009-05-29 | 2013-07-09 | Massachusetts Institute Of Technology | Cavity dynamics compensation in resonant optical modulators |
US10777722B2 (en) | 2012-06-15 | 2020-09-15 | Micron Technology, Inc. | Methods and apparatus providing thermal isolation of photonic devices |
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JP2005156855A (en) * | 2003-11-25 | 2005-06-16 | Nec Corp | Multi-channel mach-zehnder interferometer type optical circuit |
KR101210090B1 (en) * | 2006-03-03 | 2012-12-07 | 엘지이노텍 주식회사 | Metal core printed circuit board and light-emitting diode packaging method thereof |
JP2009020356A (en) * | 2007-07-12 | 2009-01-29 | Nec Corp | Silicon structure |
US9005458B2 (en) | 2013-02-26 | 2015-04-14 | Micron Technology, Inc. | Photonic device structure and method of manufacture |
US9448422B2 (en) | 2014-03-05 | 2016-09-20 | Huawei Technologies Co., Ltd. | Integrated thermo-optic switch with thermally isolated and heat restricting pillars |
CN104714311B (en) * | 2015-04-09 | 2018-07-31 | 上海新微技术研发中心有限公司 | MEMS thermo-optic tunable filter with low optical loss |
JP6600513B2 (en) * | 2015-09-04 | 2019-10-30 | ルネサスエレクトロニクス株式会社 | Semiconductor device and manufacturing method thereof |
NL2017576A (en) * | 2015-10-06 | 2017-04-11 | Asml Netherlands Bv | Chucks and clamps for holding objects of a lithographic apparatus and methods for controlling a temperature of an object held by a clamp of a lithographic apparatus |
EP3506000B1 (en) | 2017-12-29 | 2020-10-07 | IMEC vzw | Iii-v semiconductor waveguide nanoridge structure |
GB2571269B (en) | 2018-02-21 | 2021-07-07 | Rockley Photonics Ltd | Optoelectronic device |
GB2595588B (en) * | 2018-02-21 | 2022-08-31 | Rockley Photonics Ltd | Optoelectronic device |
GB2588313B (en) * | 2018-05-11 | 2022-10-05 | Rockley Photonics Ltd | Thermo-optical phase shift with ridged optical waveguide |
GB2587071A (en) | 2019-06-13 | 2021-03-17 | Rockley Photonics Ltd | Multilayer metal stack heater |
US10983412B1 (en) * | 2019-11-05 | 2021-04-20 | Globalfoundries U.S. Inc. | Silicon photonic components fabricated using a bulk substrate |
US11226506B2 (en) * | 2020-03-17 | 2022-01-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heater structure with a gas-filled isolation structure to improve thermal efficiency in a modulator device |
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2003
- 2003-06-19 US US10/465,210 patent/US6983086B2/en not_active Expired - Fee Related
- 2003-12-18 EP EP03817474A patent/EP1634117A1/en not_active Withdrawn
- 2003-12-18 WO PCT/US2003/041718 patent/WO2005006063A1/en active Application Filing
- 2003-12-18 AU AU2003304334A patent/AU2003304334A1/en not_active Abandoned
- 2003-12-22 TW TW092136433A patent/TWI260436B/en not_active IP Right Cessation
-
2004
- 2004-04-23 WO PCT/US2004/013807 patent/WO2005001558A1/en active Application Filing
- 2004-06-21 CN CN200410059398.2A patent/CN1601384B/en not_active Expired - Fee Related
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2005
- 2005-10-07 US US11/245,915 patent/US20060029325A1/en not_active Abandoned
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US4978188A (en) * | 1987-06-29 | 1990-12-18 | Nippon Telegraph And Telephone Corporation | Integrated optical device and method for manufacturing thereof |
US5465860A (en) * | 1994-07-01 | 1995-11-14 | Intel Corporation | Method of forming an integrated circuit waveguide |
US6248206B1 (en) * | 1996-10-01 | 2001-06-19 | Applied Materials Inc. | Apparatus for sidewall profile control during an etch process |
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Cited By (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8032027B2 (en) | 2005-07-25 | 2011-10-04 | Massachusetts Institute Of Technology | Wide free-spectral-range, widely tunable and hitless-switchable optical channel add-drop filters |
US20080014534A1 (en) * | 2006-07-11 | 2008-01-17 | Massachusetts Institute Of Technology | Microphotonic maskless lithography |
US8105758B2 (en) | 2006-07-11 | 2012-01-31 | Massachusetts Institute Of Technology | Microphotonic maskless lithography |
US20080044184A1 (en) * | 2006-08-16 | 2008-02-21 | Milos Popovic | Balanced bypass circulators and folded universally-balanced interferometers |
US8111994B2 (en) | 2006-08-16 | 2012-02-07 | Massachusetts Institute Of Technology | Balanced bypass circulators and folded universally-balanced interferometers |
US7853108B2 (en) | 2006-12-29 | 2010-12-14 | Massachusetts Institute Of Technology | Fabrication-tolerant waveguides and resonators |
US8068706B2 (en) | 2006-12-29 | 2011-11-29 | Massachusetts Institute Of Technology | Fabrication-tolerant waveguides and resonators |
US20110026879A1 (en) * | 2006-12-29 | 2011-02-03 | Massachusetts Institute Of Technology | Fabrication-tolerant waveguides and resonators |
US8655114B2 (en) | 2007-03-26 | 2014-02-18 | Massachusetts Institute Of Technology | Hitless tuning and switching of optical resonator amplitude and phase responses |
US20100209038A1 (en) * | 2007-03-26 | 2010-08-19 | Massachusetts Institute Of Technology | Hitless tuning and switching of optical resonator amplitude and phase responses |
US8116603B2 (en) | 2007-10-22 | 2012-02-14 | Massachusetts Institute Of Technology | Low-loss Bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
US7903909B2 (en) | 2007-10-22 | 2011-03-08 | Massachusetts Institute Of Technology | Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
US20110158584A1 (en) * | 2007-10-22 | 2011-06-30 | Massachusetts Institute Of Technology | Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
US20090142019A1 (en) * | 2007-10-22 | 2009-06-04 | Massachusetts Institute Of Technology | Low-loss bloch wave guiding in open structures and highly compact efficient waveguide-crossing arrays |
US20090274418A1 (en) * | 2008-05-01 | 2009-11-05 | Massachusetts Institute Of Technology | Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal |
US7920770B2 (en) | 2008-05-01 | 2011-04-05 | Massachusetts Institute Of Technology | Reduction of substrate optical leakage in integrated photonic circuits through localized substrate removal |
US8340478B2 (en) | 2008-12-03 | 2012-12-25 | Massachusetts Institute Of Technology | Resonant optical modulators |
US8483521B2 (en) | 2009-05-29 | 2013-07-09 | Massachusetts Institute Of Technology | Cavity dynamics compensation in resonant optical modulators |
US10777722B2 (en) | 2012-06-15 | 2020-09-15 | Micron Technology, Inc. | Methods and apparatus providing thermal isolation of photonic devices |
US11217737B2 (en) | 2012-06-15 | 2022-01-04 | Micron Technology, Inc. | Methods and apparatus providing thermal isolation of photonic devices |
Also Published As
Publication number | Publication date |
---|---|
WO2005001558A1 (en) | 2005-01-06 |
US20040258344A1 (en) | 2004-12-23 |
CN1601384A (en) | 2005-03-30 |
TW200500664A (en) | 2005-01-01 |
TWI260436B (en) | 2006-08-21 |
AU2003304334A1 (en) | 2005-01-28 |
WO2005006063A1 (en) | 2005-01-20 |
US6983086B2 (en) | 2006-01-03 |
EP1634117A1 (en) | 2006-03-15 |
CN1601384B (en) | 2010-05-26 |
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