US20050128596A1 - Method for balancing color response of imagers - Google Patents
Method for balancing color response of imagers Download PDFInfo
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- US20050128596A1 US20050128596A1 US11/041,406 US4140605A US2005128596A1 US 20050128596 A1 US20050128596 A1 US 20050128596A1 US 4140605 A US4140605 A US 4140605A US 2005128596 A1 US2005128596 A1 US 2005128596A1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/005—Arrays characterized by the distribution or form of lenses arranged along a single direction only, e.g. lenticular sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00278—Lenticular sheets
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29D—PRODUCING PARTICULAR ARTICLES FROM PLASTICS OR FROM SUBSTANCES IN A PLASTIC STATE
- B29D11/00—Producing optical elements, e.g. lenses or prisms
- B29D11/00009—Production of simple or compound lenses
- B29D11/00365—Production of microlenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0012—Arrays characterised by the manufacturing method
- G02B3/0018—Reflow, i.e. characterized by the step of melting microstructures to form curved surfaces, e.g. manufacturing of moulds and surfaces for transfer etching
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0043—Inhomogeneous or irregular arrays, e.g. varying shape, size, height
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
- G02B3/0006—Arrays
- G02B3/0037—Arrays characterized by the distribution or form of lenses
- G02B3/0056—Arrays characterized by the distribution or form of lenses arranged along two different directions in a plane, e.g. honeycomb arrangement of lenses
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
Definitions
- the present invention relates generally to the field of semiconductor-based imager devices using micro-lenses, and more particularly to the fabrication of an array of micro-lenses.
- CCDs charge coupled devices
- APS CMOS active pixel sensors
- photodiode arrays charge injection devices
- hybrid focal plane arrays among others.
- Semiconductor-based displays using micro-lenses are also being developed.
- Micro-lenses may be formed through either a subtractive or an additive process.
- a lens material is formed on a substrate and subsequently is formed into a micro-lens shape.
- an intermediate material is deposited in an array onto a substrate and formed into a micro-lens array using a reflow process.
- Each micro-lens is formed with a minimum distance, typically no less than 0.3 microns, between adjacent micro-lenses. Any closer than 0.3 micrometers may cause two neighboring micro-lenses to bridge during reflow.
- each micro-lens is patterned as a single square with gaps around it. During the reflowing of the patterned square micro-lenses, they form a gel drop in a partially spherical shape driven by the force equilibrium of surface tension and gravity. The micro-lenses then harden in this shape.
- the gap between two adjacent gel drops is too narrow, they may touch and merge, or bridge, into one larger drop.
- the effect of bridging is that it changes the shape of the lenses, which leads to a change in focal length, or more precisely the energy distribution in the focal range.
- a change in the energy distribution in the focal range leads to a loss in quantum efficiency of and enhanced cross-talk between pixels.
- the gaps allow unfocused photons through the empty spaces in the micro-lens array, leading to increased cross-talk between respective photosensors of adjacent pixel cells.
- micro-lens array having differently sized micro-lenses. If the known techniques, which use a single reflow step, were used to form such micro-lenses, the differently sized micro-lenses would have different focal lengths, which would lead to poor focusing at certain photosensors or to the need to modify the locations of some photosensors.
- micro-lenses array with varied sized micro-lenses, each having a focal length optimized for the color or wavelength of light it is detecting.
- Embodiments of the present invention provide an improved micro-lens array.
- the micro-lens array includes a first set of micro-lenses comprising a plurality of first micro-lenses each having a first size, and a second set of micro-lenses comprising a plurality of second micro-lenses each having a second size.
- the sizes of at least one of the first micro-lenses may be different from the sizes of at least one of the second micro-lenses.
- the micro-lens array has little to approximately no space between at least one pair of adjacent micro-lenses.
- An exemplary semiconductor-based imager embodiment includes a pixel array and a micro-lens array.
- the pixel array has embedded pixel cells, each with a photosensor.
- the micro-lens array has at least one row of micro-lenses which includes a first set of micro-lenses comprising a plurality of first micro-lenses each having a first size, and a second set of micro-lenses comprising a plurality of second micro-lenses each having a second size, different from the first size.
- the second set of micro-lenses are arranged among the first set of micro-lenses.
- the micro-lens row has little to approximately no space between adjacent micro-lenses.
- a method for manufacturing a micro-lens array includes the acts of patterning a first set of micro-lens material onto a support, reflowing the first set of micro-lens material under first reflow conditions, curing the first set of micro-lens material to form a first set of micro-lenses including a plurality of first micro-lenses, patterning a second set of micro-lens material onto the support, reflowing the second set of micro-lens material under second reflow conditions, which may be different from the first conditions, and curing the second set of micro-lens material to form a second set of micro-lenses including a plurality of second micro-lenses.
- FIG. 1 is a top view of an array of micro-lens material deposited on a substrate in accordance with an exemplary embodiment of the invention.
- FIG. 2 is a top view of an array of micro-lenses reflowed and cured from the micro-lens material of FIG. 1 .
- FIG. 3 is a top view of a second array of micro-lens material deposited adjacent to the micro-lenses of FIG. 2 .
- FIG. 4 is a top view of a second array of micro-lenses reflowed and cured from the second micro-lens material of FIG. 3 .
- FIG. 5 is a top view of a third array of micro-lens material deposited adjacent to the micro-lenses of FIGS. 2 and 3 .
- FIG. 6 is a top view of a third array of micro-lenses reflowed and cured from the third micro-lens material of FIG. 5 .
- FIG. 7 is a cross-sectional view taken along line VII—VII of FIG. 6 .
- FIG. 8 illustrates a semiconductor-based imager constructed in accordance with an exemplary embodiment of the invention.
- FIGS. 9-11 illustrate the formation of a micro-lens array in accordance with another exemplary embodiment of the invention.
- FIG. 12 illustrates a process for fabricating the micro-lens array of FIG. 6 .
- wafer or “substrate,” as used herein, is to be understood as including silicon, silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures.
- SOI silicon-on-insulator
- SOS silicon-on-sapphire
- doped and undoped semiconductors epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures.
- previous processing steps may have been utilized to form regions, junctions, or material layers in or over the base semiconductor structure or foundation.
- the semiconductor need not be silicon-based, but could be based on silicon-germanium, germanium, gallium arsenide or other semiconductors.
- pixel refers to a photo-element unit cell containing a photosensor device and associated structures for converting photons to an electrical signal.
- pixel refers to a photo-element unit cell containing a photosensor device and associated structures for converting photons to an electrical signal.
- a single representative three-color pixel and its manner of formation is illustrated in the figures and description herein; however, typically fabrication of a plurality of like pixels proceeds simultaneously. Accordingly, the following detailed description is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims.
- CMOS imager any micro-electronic or micro-optical device that requires high quality micro-lenses for optimized performance.
- Other exemplary micro-optical devices which can employ the invention include CCDs and display devices, as well as others.
- the array 110 includes a plurality of first micro-lenses 112 G , a plurality of second micro-lenses 112 B , and a plurality of third micro-lenses 112 R , each plurality formed on a substrate 120 .
- the first micro-lenses 112 G are formed for green color pixels
- the second micro-lenses 112 B are formed for blue color pixels
- the third micro-lenses 112 R are formed for red color pixels.
- the second micro-lenses 112 B are shown ( FIGS. 4-7 ) to have a larger size and a larger surface area than the first micro-lenses 112 G .
- Each of the first micro-lenses 112 G can be formed to have a focal length of similar length as the focal lengths of the second micro-lenses 112 B and the third micro-lenses 112 R .
- micro-lenses 112 G , 112 B , and 112 R can be formed to have different focal lengths.
- different wavelengths of light are absorbed at different depths within a photosensor. Therefore, micro-lenses 112 G , 112 B , and 112 R can be formed having a focal length optimized for the wavelength of light to be absorbed, e.g., green, blue, and red, respectively.
- micro-lenses 112 B can be formed having a focal length corresponding to approximately a top surface of an underlying photosensor
- micro-lenses 112 R can be formed having a focal length corresponding to a greater depth within an underlying photosensor, for example, approximately between 2 micrometers ( ⁇ ) to 3 ⁇ deep
- micro-lenses 112 G can be formed having a focal length corresponding to an intermediate depth within an underlying photosensor between that of micro-lenses 112 B and 112 R .
- the second micro-lenses 112 B and the third micro-lenses 112 R as shown, abut the first micro-lenses 112 G , thereby reducing the amount of space of the substrate 120 not covered by a micro-lens.
- Light transmitted directly through the substrate 120 without going through a micro-lens is not properly focused relative to any pixel cells, and may increase the incidence of cross-talk between pixel cells.
- the first micro-lenses 112 G are formed from a first micro-lens material 12 G .
- the first micro-lens material 12 G ( FIG. 1 ) is deposited and patterned upon the support substrate 120 .
- the substrate 120 is formed of any suitable material which is transparent to electromagnetic radiation.
- Each deposition of the first micro-lens material 12 G has a substantially rectangular configuration and each is substantially equal in size with the others.
- the first micro-lens material 12 G is a material which, upon reflow, forms into a solidly cross-linked polymer impervious to subsequent reflow processes.
- the substantially rectangular configuration of the first micro-lens material 12 G is transformed into the first micro-lens 112 G , which has a somewhat rectangular configuration with rounded edges and a curved top.
- the first micro-lenses 112 G which are transparent to electromagnetic radiation, will retain their shape even if a subsequent reflow process is performed.
- a second micro-lens material 12 B ( FIG. 3 ) is patterned and reflowed on the substrate 120 .
- the second micro-lens material 12 B patterned in a substantially rectangular configuration, is positioned in some of the spaces S between the first micro-lenses 112 G . Additionally, portions of second micro-lens material 12 B can be formed overlapping the first micro-lenses 112 G .
- Reflowing and curing of the second micro-lens material 12 B under reflow conditions which may differ from the conditions of the reflow of the first micro-lens material 12 G , forms second micro-lenses 112 B , as shown in FIG. 4 .
- the second micro-lenses 112 B are impervious to subsequent reflow, just like the first micro-lenses 112 G .
- the second micro-lenses 112 B which are of a different size than the first micro-lenses 112 G , specifically, a larger size, are each somewhat rectangular in configuration with rounded corners and a curved top.
- the second micro-lenses 112 B have a similar curvature, a greater volume, and a larger surface area than the first micro-lenses 112 G . It should be appreciated that instead, the first micro-lenses 112 G may be larger than the second micro-lenses 112 B .
- a third micro-lens material 12 R is patterned and reflowed ( FIG. 5 ). As with the other micro-lens material 12 G , 12 B patterns, the third micro-lens material 12 R pattern is substantially rectangular. Also, the third micro-lens material 12 R can overlap micro-lenses 112 G and/or 112 B .
- third micro-lenses 112 R are formed, which are each somewhat rectangular in configuration with rounded corners and a curved top ( FIG. 6 ).
- micro-lenses 112 G , 112 B , 112 R are formed, sized and configured so as to present a focal length down to a focal plane 122 .
- micro-lenses 112 G , 112 B , 112 R can be formed having a same focal length or a focal length for a particular color of light, specifically green, blue, and red, respectively.
- the micro-lenses 112 G , 112 B , 112 R may be formed, sized and configured to present a focal length to the focal plane 122 for the colors of cyan, magenta, and yellow, or any other suitable combination of colors.
- a micro-lens array 110 is thus formed, and includes any combination of two or more micro-lenses 112 G , 112 B , 112 R .
- fabricating the micro-lens array 110 in this way forming first micro-lenses 112 G spaced apart, e.g., in a checkerboard fashion, and filling in the spaces S with second and third micro-lenses 112 B , 112 R formed in separate processes, bridging between adjacent first micro-lenses 112 G and between first, second, and third micro-lenses 112 G , 112 B , 112 R is diminished.
- the subsequent reflow of the third micro-lens material 12 R into the third micro-lenses 112 R will not cause bridging between the first and third micro-lenses 112 G , 112 R , between the second and third micro-lenses 112 B , 112 R , or between a pair of third micro-lenses 112 R .
- the micro-lens array 110 is approximately space-less since the formed micro-lenses abut one another.
- second and third micro-lenses 112 B , 112 R may be formed in a single reflow process. Since second and third micro-lenses 112 B , 112 R are spatially separated from one another, bridging is not likely.
- electromagnetic radiation 119 is transmitted through the micro-lenses 112 G , 112 B , and 112 R (the latter is not shown in the FIG. 7 cross-section).
- each of the micro-lenses 112 G has a different volume than each of the micro-lenses 112 B and 112 R .
- the micro-lenses 112 G , 112 B , and 112 R each can be shaped, configured, and conditioned during reflow to create a focal point that extends down to the focal plane 122 , as shown in FIG. 7 .
- the micro-lenses 112 G , 112 B , and 112 R each can be shaped, configured, and conditioned during reflow to create different focal points, which can be optimized for a particular wavelength or color.
- the micro-lens array 110 can be formed to provide greater signal strength for pixels that would conventionally exhibit a lower signal. For example, blue color pixels tend to produce an inherently lower output signal for a given light intensity.
- the micro-lens array 110 can be formed by creating larger micro-lenses, such as the second and third micro-lenses 112 B , 112 R for the blue and red color pixels, which will collect more light and help balance pixel signal strength for the different color pixels of a pixel array.
- a balanced signal between colors assists the dynamic range of the photosensors in pixel cells because it avoids systematically sending pixels of one color into saturation while other pixels are only partially saturated.
- the imager 134 includes the micro-lens array 110 , with the micro-lenses 112 G , 112 B , and 112 R (not shown), the substrate 120 , a color filter array 124 , a light shield 126 , and pixel cells 130 embedded within a wafer 132 .
- Each pixel cell 130 includes a photosensor 128 .
- the micro-lenses 112 G , 112 B , and 112 R are shaped and configured so that their focal lengths coincide with the focal plane 122 , which runs through the photosensors 128 .
- micro-lenses 112 G , 112 B , and 112 R can be shaped and configured so that each of micro-lenses 112 G , 112 B , and 112 R have focal lengths corresponding to different wavelengths of light.
- a first set of micro-lens material is deposited and patterned on the substrate 120 .
- the first micro-lens material is subjected to a first reflow process and is cured to form the first micro-lenses 112 G .
- the micro-lenses 112 G are spaced apart from one another.
- a second micro-lens material with a different thickness is deposited and patterned on the substrate 120 in some of the spaces between the first micro-lenses 112 G .
- Subjecting the micro-lens array to a second reflow process converts the second micro-lens material depositions into second micro-lenses 112 B ( FIG. 10 ). If needed, the second reflow process may be conducted under different conditions than the first reflow process.
- a third micro-lens material is deposited and patterned on the substrate in other of the spaces among the first and second micro-lenses 112 G , 112 B .
- a third reflow converts the third micro-lens material patterns into third micro-lenses 112 R ( FIG. 11 ). If needed, the third reflow process may be conducted under different conditions than the first and/or second reflow processes. While described in terms of three separate reflow processes, it should be understood that the second and third micro-lenses 112 B , 112 R may be formed together in a single reflow process, since these micro-lenses are separated from one another and the likelihood of bridging is minimized.
- the micro-lens array 210 is approximately space-less, meaning that there is little to no space on the micro-lens array 210 between adjacent micro-lenses 112 G , 112 B , 112 R through which unfocussed light can be transmitted.
- the shape of the micro-lenses after being subjected to reflow conditions is defined by several factors, including the thickness and type of material used to form the micro-lenses, the reflow temperature profile, and any pretreatment of the material that changes its glass transition temperature T g .
- pretreatments include ultraviolet light exposure or preheating the material to a temperature below the glass transition temperature T g .
- An example of first reflow conditions may include providing first micro-lens material at a first thickness and from a first type of material, exposing the first micro-lens material with an ultraviolet light flood exposure of a specific dose, and reflowing at a first temperature ramp rate, followed by a cure.
- Second reflow conditions may include providing second micro-lens material of the first type of material at a second thickness and reflowing the second micro-lens material with the first temperature ramp rate, followed by a cure.
- Third reflow conditions may include providing a third micro-lens material of a second material type and of a third thickness, pre-heating the material to a temperature below the transition glass temperature T g of the third micro-lens material for a set period of time, and then reflowing at a second temperature ramp rate, followed by a cure.
- the first micro-lens material 12 G is patterned on the substrate 120 .
- the patterning as described above, can be a checkerboard pattern, which includes spaces between portions of the first micro-lens material 12 G .
- a single reticle may be used to prepare each of the first micro-lens material 12 G patterns.
- a thin film of micro-lens material of a first thickness is coated on the substrate, the material is exposed using a suitable mask, and it is developed to either dissolve the exposed micro-lens material (positive resist) or dissolve the unexposed micro-lens material (negative resist).
- the first micro-lens material 12 G is reflowed at a first condition. Reflowing of the first micro-lens material 12 G turns the material into the first micro-lenses 112 G .
- the micro-lenses 112 G are cured, thus forming a checkerboard pattern of solidly cross-linked first micro-lenses 112 G .
- the second micro-lens material 12 B is patterned on the substrate 120 in some of the spaces between the first micro-lenses 112 G .
- a single reticle may be used to prepare each of the second micro-lens material 12 B depositions. If the second micro-lens material 12 B patterns are of the same size as the first micro-lens material 12 G patterns (as described with reference to FIGS. 9 and 10 ), the same reticle as was used for the pattern of the first micro-lens material 12 G patterns may be used for the pattern of the second micro-lens material patterns 12 B . For the pattern of the second micro-lens material 12 B , the reticle is shifted in the stepper job.
- the second micro-lens material 12 B may be reflowed at a second condition to form the second micro-lenses 112 B .
- the second condition may differ from the first condition, for example, by varying the exposure and/or the dose of bleaching or the step baking temperature.
- the first micro-lenses 112 G and second micro-lenses 112 B can be formed having same or different focal lengths.
- a second cure is performed.
- third micro-lens material 12 R is patterned in remaining open spaces between the micro-lenses 112 G , 112 B .
- the third micro-lens material 12 R may be reflowed at a third condition to form the third micro-lenses 112 R .
- the third condition may differ from the first and second conditions, for example, by varying the doses of exposing and/or bleaching or the step baking temperature. By using different reflow conditions, the third micro-lenses 112 R can be formed such that their focal lengths are the same or different than the focal lengths of the first and second micro-lenses 112 G , 112 B .
- a third cure is performed.
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Abstract
A micro-lens array with reduced or no empty space between individual micro-lenses and a method for forming same. The micro-lens array is formed by patterning a first set of micro-lens material in a checkerboard pattern on a substrate. The first set of micro-lens material is reflowed and cured into first micro-lenses impervious to subsequent reflows. Then, a second set of micro-lens material is patterned in spaces among the first micro-lenses, reflowed and cured into second micro-lenses. The reflows and cures can be conducted under different conditions, and the micro-lenses may be differently sized. The conditions of the reflows can be chosen to ensure that the focal lengths of micro-lenses are optimized for maximum sensor signal.
Description
- The present invention relates generally to the field of semiconductor-based imager devices using micro-lenses, and more particularly to the fabrication of an array of micro-lenses.
- The semiconductor industry currently uses different types of semiconductor-based imagers, such as charge coupled devices (CCDs), CMOS active pixel sensors (APS), photodiode arrays, charge injection devices and hybrid focal plane arrays, among others, that use an array of micro-lenses. Semiconductor-based displays using micro-lenses are also being developed.
- Micro-lenses may be formed through either a subtractive or an additive process. In the additive process, a lens material is formed on a substrate and subsequently is formed into a micro-lens shape.
- In conventional additive micro-lens fabrication, an intermediate material is deposited in an array onto a substrate and formed into a micro-lens array using a reflow process. Each micro-lens is formed with a minimum distance, typically no less than 0.3 microns, between adjacent micro-lenses. Any closer than 0.3 micrometers may cause two neighboring micro-lenses to bridge during reflow. In the known process, each micro-lens is patterned as a single square with gaps around it. During the reflowing of the patterned square micro-lenses, they form a gel drop in a partially spherical shape driven by the force equilibrium of surface tension and gravity. The micro-lenses then harden in this shape. If the gap between two adjacent gel drops is too narrow, they may touch and merge, or bridge, into one larger drop. The effect of bridging is that it changes the shape of the lenses, which leads to a change in focal length, or more precisely the energy distribution in the focal range. A change in the energy distribution in the focal range leads to a loss in quantum efficiency of and enhanced cross-talk between pixels. The gaps, however, allow unfocused photons through the empty spaces in the micro-lens array, leading to increased cross-talk between respective photosensors of adjacent pixel cells.
- It is desired to form a micro-lens array having differently sized micro-lenses. If the known techniques, which use a single reflow step, were used to form such micro-lenses, the differently sized micro-lenses would have different focal lengths, which would lead to poor focusing at certain photosensors or to the need to modify the locations of some photosensors.
- It is desirable to enhance the amount of light received from the micro-lenses to the photosensors of an imager. It is also desirable to form a micro-lens array with varied sized micro-lenses, each having a focal length optimized for the color or wavelength of light it is detecting.
- Embodiments of the present invention provide an improved micro-lens array. In one exemplary micro-lens array embodiment, the micro-lens array includes a first set of micro-lenses comprising a plurality of first micro-lenses each having a first size, and a second set of micro-lenses comprising a plurality of second micro-lenses each having a second size. The sizes of at least one of the first micro-lenses may be different from the sizes of at least one of the second micro-lenses. The micro-lens array has little to approximately no space between at least one pair of adjacent micro-lenses.
- An exemplary semiconductor-based imager embodiment includes a pixel array and a micro-lens array. The pixel array has embedded pixel cells, each with a photosensor. The micro-lens array has at least one row of micro-lenses which includes a first set of micro-lenses comprising a plurality of first micro-lenses each having a first size, and a second set of micro-lenses comprising a plurality of second micro-lenses each having a second size, different from the first size. The second set of micro-lenses are arranged among the first set of micro-lenses. The micro-lens row has little to approximately no space between adjacent micro-lenses.
- In an exemplary fabrication embodiment, a method is provided for manufacturing a micro-lens array. The method includes the acts of patterning a first set of micro-lens material onto a support, reflowing the first set of micro-lens material under first reflow conditions, curing the first set of micro-lens material to form a first set of micro-lenses including a plurality of first micro-lenses, patterning a second set of micro-lens material onto the support, reflowing the second set of micro-lens material under second reflow conditions, which may be different from the first conditions, and curing the second set of micro-lens material to form a second set of micro-lenses including a plurality of second micro-lenses.
- These and other features of the various embodiments of the invention will be more readily understood from the following detailed description of the invention which is provided in connection with the accompanying drawings.
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FIG. 1 is a top view of an array of micro-lens material deposited on a substrate in accordance with an exemplary embodiment of the invention. -
FIG. 2 is a top view of an array of micro-lenses reflowed and cured from the micro-lens material ofFIG. 1 . -
FIG. 3 is a top view of a second array of micro-lens material deposited adjacent to the micro-lenses ofFIG. 2 . -
FIG. 4 is a top view of a second array of micro-lenses reflowed and cured from the second micro-lens material ofFIG. 3 . -
FIG. 5 is a top view of a third array of micro-lens material deposited adjacent to the micro-lenses ofFIGS. 2 and 3 . -
FIG. 6 is a top view of a third array of micro-lenses reflowed and cured from the third micro-lens material ofFIG. 5 . -
FIG. 7 is a cross-sectional view taken along line VII—VII ofFIG. 6 . -
FIG. 8 illustrates a semiconductor-based imager constructed in accordance with an exemplary embodiment of the invention. -
FIGS. 9-11 illustrate the formation of a micro-lens array in accordance with another exemplary embodiment of the invention. -
FIG. 12 illustrates a process for fabricating the micro-lens array ofFIG. 6 . - In the following detailed description, reference is made to the accompanying drawings, which form a part hereof and show by way of illustration specific embodiments in which the invention may be practiced. These embodiments are described in sufficient detail to enable those skilled in the art to practice the invention, and it is to be understood that other embodiments may be utilized, and that structural, logical, and electrical changes may be made without departing from the spirit and scope of the present invention. The progression of processing steps described is exemplary of embodiments of the invention; however, the sequence of steps is not limited to that set forth herein and may be changed as is known in the art, with the exception of steps necessarily occurring in a certain order.
- The term “wafer” or “substrate,” as used herein, is to be understood as including silicon, silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technology, doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. Furthermore, when reference is made to a “wafer” or “substrate” in the following description, previous processing steps may have been utilized to form regions, junctions, or material layers in or over the base semiconductor structure or foundation. In addition, the semiconductor need not be silicon-based, but could be based on silicon-germanium, germanium, gallium arsenide or other semiconductors.
- The term “pixel,” as used herein, refers to a photo-element unit cell containing a photosensor device and associated structures for converting photons to an electrical signal. For purposes of illustration, a single representative three-color pixel and its manner of formation is illustrated in the figures and description herein; however, typically fabrication of a plurality of like pixels proceeds simultaneously. Accordingly, the following detailed description is not to be taken in a limiting sense, and the scope of the present invention is defined only by the appended claims.
- Finally, while the invention is described with reference to a semiconductor-based imager, such as a CMOS imager, it should be appreciated that the invention may be applied in any micro-electronic or micro-optical device that requires high quality micro-lenses for optimized performance. Other exemplary micro-optical devices which can employ the invention include CCDs and display devices, as well as others.
- Referring now to
FIGS. 1-7 , an array of micro-lenses 110 (FIG. 6 ) is shown. Thearray 110 includes a plurality of first micro-lenses 112 G, a plurality of second micro-lenses 112 B, and a plurality of third micro-lenses 112 R, each plurality formed on asubstrate 120. The first micro-lenses 112 G are formed for green color pixels, the second micro-lenses 112 B are formed for blue color pixels, and the third micro-lenses 112 R are formed for red color pixels. The second micro-lenses 112 B are shown (FIGS. 4-7 ) to have a larger size and a larger surface area than the first micro-lenses 112 G. - Each of the first micro-lenses 112 G can be formed to have a focal length of similar length as the focal lengths of the second micro-lenses 112 B and the third micro-lenses 112 R. Alternatively, micro-lenses 112 G, 112 B, and 112 R can be formed to have different focal lengths. As is known in the art, different wavelengths of light are absorbed at different depths within a photosensor. Therefore, micro-lenses 112 G, 112 B, and 112 R can be formed having a focal length optimized for the wavelength of light to be absorbed, e.g., green, blue, and red, respectively. In such a case, micro-lenses 112 B can be formed having a focal length corresponding to approximately a top surface of an underlying photosensor, micro-lenses 112 R can be formed having a focal length corresponding to a greater depth within an underlying photosensor, for example, approximately between 2 micrometers (μ) to 3 μdeep, and micro-lenses 112 G can be formed having a focal length corresponding to an intermediate depth within an underlying photosensor between that of micro-lenses 112 B and 112 R.
- The second micro-lenses 112 B and the third micro-lenses 112 R, as shown, abut the first micro-lenses 112 G, thereby reducing the amount of space of the
substrate 120 not covered by a micro-lens. Light transmitted directly through thesubstrate 120 without going through a micro-lens is not properly focused relative to any pixel cells, and may increase the incidence of cross-talk between pixel cells. - The first micro-lenses 112 G are formed from a first micro-lens material 12 G. The first micro-lens material 12 G (
FIG. 1 ) is deposited and patterned upon thesupport substrate 120. Thesubstrate 120 is formed of any suitable material which is transparent to electromagnetic radiation. Each deposition of the first micro-lens material 12 G has a substantially rectangular configuration and each is substantially equal in size with the others. The first micro-lens material 12 G is a material which, upon reflow, forms into a solidly cross-linked polymer impervious to subsequent reflow processes. During a reflow process conducted under reflow conditions, the substantially rectangular configuration of the first micro-lens material 12 G is transformed into the first micro-lens 112 G, which has a somewhat rectangular configuration with rounded edges and a curved top. The first micro-lenses 112 G, which are transparent to electromagnetic radiation, will retain their shape even if a subsequent reflow process is performed. - As shown in
FIG. 2 , there are spaces S between the micro-lenses 112 G. After patterning and reflowing the first micro-lens material 12 G to form the first solidly cross-linked polymer micro-lenses 112 G, a second micro-lens material 12 B (FIG. 3 ) is patterned and reflowed on thesubstrate 120. The second micro-lens material 12 B, patterned in a substantially rectangular configuration, is positioned in some of the spaces S between the first micro-lenses 112 G. Additionally, portions of second micro-lens material 12 B can be formed overlapping the first micro-lenses 112 G. - Reflowing and curing of the second micro-lens material 12 B under reflow conditions, which may differ from the conditions of the reflow of the first micro-lens material 12 G, forms second micro-lenses 112 B, as shown in
FIG. 4 . The second micro-lenses 112 B are impervious to subsequent reflow, just like the first micro-lenses 112 G. The second micro-lenses 112 B, which are of a different size than the first micro-lenses 112 G, specifically, a larger size, are each somewhat rectangular in configuration with rounded corners and a curved top. More particularly, the second micro-lenses 112 B have a similar curvature, a greater volume, and a larger surface area than the first micro-lenses 112 G. It should be appreciated that instead, the first micro-lenses 112 G may be larger than the second micro-lenses 112 B. - As will be apparent from a review of
FIG. 4 , spaces S remain among the first and second micro-lenses 112 G, 112 B. In those spaces S, a third micro-lens material 12 R is patterned and reflowed (FIG. 5 ). As with the other micro-lens material 12 G, 12 B patterns, the third micro-lens material 12 R pattern is substantially rectangular. Also, the third micro-lens material 12 R can overlap micro-lenses 112 G and/or 112 B. After a third reflow process and cure utilizing reflow conditions, which may differ from either of the first two reflows and cures, third micro-lenses 112 R are formed, which are each somewhat rectangular in configuration with rounded corners and a curved top (FIG. 6 ). - The micro-lenses 112 G, 112 B, 112 R are formed, sized and configured so as to present a focal length down to a
focal plane 122. As noted above, micro-lenses 112 G, 112 B, 112 R can be formed having a same focal length or a focal length for a particular color of light, specifically green, blue, and red, respectively. It should be appreciated that instead, the micro-lenses 112 G, 112 B, 112 R may be formed, sized and configured to present a focal length to thefocal plane 122 for the colors of cyan, magenta, and yellow, or any other suitable combination of colors. - A
micro-lens array 110 is thus formed, and includes any combination of two or more micro-lenses 112 G, 112 B, 112 R. By fabricating themicro-lens array 110 in this way, forming first micro-lenses 112 G spaced apart, e.g., in a checkerboard fashion, and filling in the spaces S with second and third micro-lenses 112 B,112 R formed in separate processes, bridging between adjacent first micro-lenses 112 G and between first, second, and third micro-lenses 112 G, 112 B, 112 R is diminished. This is because the first micro-lenses 112 G have already gone through a reflow process that has rendered them impervious to any subsequent reflow process. Thus, the subsequent reflow of the second micro-lens material 12 B into the second micro-lenses 112 B will not cause bridging between the first and second micro-lenses 112 G, 112 B or between a pair of second micro-lenses 112 B. Likewise, the subsequent reflow of the third micro-lens material 12 R into the third micro-lenses 112 R will not cause bridging between the first and third micro-lenses 112 G, 112 R, between the second and third micro-lenses 112 B, 112 R, or between a pair of third micro-lenses 112 R. Themicro-lens array 110 is approximately space-less since the formed micro-lenses abut one another. - It should be appreciated that the second and third micro-lenses 112 B, 112 R may be formed in a single reflow process. Since second and third micro-lenses 112 B, 112 R are spatially separated from one another, bridging is not likely.
- Referring particularly to
FIG. 7 ,electromagnetic radiation 119 is transmitted through the micro-lenses 112 G, 112 B, and 112 R (the latter is not shown in theFIG. 7 cross-section). As shown, each of the micro-lenses 112 G has a different volume than each of the micro-lenses 112 B and 112 R. However, the micro-lenses 112 G, 112 B, and 112 R each can be shaped, configured, and conditioned during reflow to create a focal point that extends down to thefocal plane 122, as shown inFIG. 7 . Also, the micro-lenses 112 G, 112 B, and 112 R each can be shaped, configured, and conditioned during reflow to create different focal points, which can be optimized for a particular wavelength or color. - By forming the micro-lenses 112 G, 112 B, and 112 R through separate reflow processes, the
micro-lens array 110 can be formed to provide greater signal strength for pixels that would conventionally exhibit a lower signal. For example, blue color pixels tend to produce an inherently lower output signal for a given light intensity. Thus, themicro-lens array 110 can be formed by creating larger micro-lenses, such as the second and third micro-lenses 112 B, 112 R for the blue and red color pixels, which will collect more light and help balance pixel signal strength for the different color pixels of a pixel array. A balanced signal between colors assists the dynamic range of the photosensors in pixel cells because it avoids systematically sending pixels of one color into saturation while other pixels are only partially saturated. - Referring now to
FIG. 8 , there is shown a semiconductor-basedimager 134, such as a CMOS imager. Theimager 134 includes themicro-lens array 110, with the micro-lenses 112 G, 112 B, and 112 R (not shown), thesubstrate 120, acolor filter array 124, alight shield 126, andpixel cells 130 embedded within awafer 132. Eachpixel cell 130 includes aphotosensor 128. As shown inFIG. 8 , the micro-lenses 112 G, 112 B, and 112 R are shaped and configured so that their focal lengths coincide with thefocal plane 122, which runs through thephotosensors 128. Alternatively, the micro-lenses 112 G, 112 B, and 112 R can be shaped and configured so that each of micro-lenses 112 G, 112 B, and 112 R have focal lengths corresponding to different wavelengths of light. - With reference to
FIGS. 9-11 , next will be described the formation of amicro-lens array 210 having similarly shaped micro-lenses that are formed in three separate pattern and reflow procedures. A first set of micro-lens material is deposited and patterned on thesubstrate 120. The first micro-lens material is subjected to a first reflow process and is cured to form the first micro-lenses 112 G. As is shown inFIG. 9 , the micro-lenses 112 G are spaced apart from one another. - Then, a second micro-lens material with a different thickness is deposited and patterned on the
substrate 120 in some of the spaces between the first micro-lenses 112 G. Subjecting the micro-lens array to a second reflow process converts the second micro-lens material depositions into second micro-lenses 112 B (FIG. 10 ). If needed, the second reflow process may be conducted under different conditions than the first reflow process. - Finally, a third micro-lens material is deposited and patterned on the substrate in other of the spaces among the first and second micro-lenses 112 G, 112 B. A third reflow converts the third micro-lens material patterns into third micro-lenses 112 R (
FIG. 11 ). If needed, the third reflow process may be conducted under different conditions than the first and/or second reflow processes. While described in terms of three separate reflow processes, it should be understood that the second and third micro-lenses 112 B, 112 R may be formed together in a single reflow process, since these micro-lenses are separated from one another and the likelihood of bridging is minimized. - As shown in
FIG. 11 , themicro-lens array 210 is approximately space-less, meaning that there is little to no space on themicro-lens array 210 between adjacent micro-lenses 112 G, 112 B, 112 R through which unfocussed light can be transmitted. - An example of reflow conditions are described next. The shape of the micro-lenses after being subjected to reflow conditions is defined by several factors, including the thickness and type of material used to form the micro-lenses, the reflow temperature profile, and any pretreatment of the material that changes its glass transition temperature Tg. Examples of such pretreatments include ultraviolet light exposure or preheating the material to a temperature below the glass transition temperature Tg. An example of first reflow conditions may include providing first micro-lens material at a first thickness and from a first type of material, exposing the first micro-lens material with an ultraviolet light flood exposure of a specific dose, and reflowing at a first temperature ramp rate, followed by a cure. Second reflow conditions may include providing second micro-lens material of the first type of material at a second thickness and reflowing the second micro-lens material with the first temperature ramp rate, followed by a cure. Third reflow conditions may include providing a third micro-lens material of a second material type and of a third thickness, pre-heating the material to a temperature below the transition glass temperature Tg of the third micro-lens material for a set period of time, and then reflowing at a second temperature ramp rate, followed by a cure.
- Next will be described a process for forming the
micro-lens array 110 with reference toFIG. 12 . AtStep 150, the first micro-lens material 12 G is patterned on thesubstrate 120. The patterning, as described above, can be a checkerboard pattern, which includes spaces between portions of the first micro-lens material 12 G . A single reticle may be used to prepare each of the first micro-lens material 12 G patterns. In the patterning step, a thin film of micro-lens material of a first thickness is coated on the substrate, the material is exposed using a suitable mask, and it is developed to either dissolve the exposed micro-lens material (positive resist) or dissolve the unexposed micro-lens material (negative resist). AtStep 155, the first micro-lens material 12 G is reflowed at a first condition. Reflowing of the first micro-lens material 12 G turns the material into the first micro-lenses 112 G. AtStep 160, the micro-lenses 112 G are cured, thus forming a checkerboard pattern of solidly cross-linked first micro-lenses 112 G. - At
Step 165, the second micro-lens material 12 B is patterned on thesubstrate 120 in some of the spaces between the first micro-lenses 112 G. A single reticle may be used to prepare each of the second micro-lens material 12 B depositions. If the second micro-lens material 12 B patterns are of the same size as the first micro-lens material 12 G patterns (as described with reference toFIGS. 9 and 10 ), the same reticle as was used for the pattern of the first micro-lens material 12 G patterns may be used for the pattern of the second micro-lens material patterns 12 B. For the pattern of the second micro-lens material 12 B, the reticle is shifted in the stepper job. - At
Step 170, the second micro-lens material 12 B may be reflowed at a second condition to form the second micro-lenses 112 B. The second condition may differ from the first condition, for example, by varying the exposure and/or the dose of bleaching or the step baking temperature. By using different reflow conditions, the first micro-lenses 112 G and second micro-lenses 112 B can be formed having same or different focal lengths. AtStep 175, a second cure is performed. - At
Step 180, third micro-lens material 12 R is patterned in remaining open spaces between the micro-lenses 112 G, 112 B. AtStep 185, the third micro-lens material 12 R may be reflowed at a third condition to form the third micro-lenses 112 R. The third condition may differ from the first and second conditions, for example, by varying the doses of exposing and/or bleaching or the step baking temperature. By using different reflow conditions, the third micro-lenses 112 R can be formed such that their focal lengths are the same or different than the focal lengths of the first and second micro-lenses 112 G, 112 B. AtStep 190, a third cure is performed. - While the invention has been described in detail in connection with exemplary embodiments known at the time, it should be readily understood that the invention is not limited to such disclosed embodiments. Rather, the invention can be modified to incorporate any number of variations, alterations, substitutions or equivalent arrangements not heretofore described, but which are commensurate with the spirit and scope of the invention. For example, while the
micro-lens arrays
Claims (11)
1-45. (canceled)
46. A method of forming a micro-lens array, comprising:
patterning a first set of micro-lens material onto a substrate;
reflowing the first set of micro-lens material under first reflow conditions;
curing the first set of micro-lens material to form a first set of micro-lenses including a plurality of first micro-lenses;
patterning a second set of micro-lens material onto the substrate;
reflowing the second set of micro-lens material; and
curing the second set of micro-lens material to form a second set of micro-lenses including a plurality of second micro-lenses;
wherein the second micro-lenses are each positioned in a space among the first micro-lenses.
47. The method of claim 46 , wherein said reflowing the second set of micro-lens material comprises reflowing the second set of micro-lens material under reflow conditions which are different than said first reflow conditions.
48. The method of claim 47 , wherein said first and second reflow conditions are chosen to create a focal length in said first micro-lenses substantially equal to a focal length in said second micro-lenses.
49. The method of claim 47 , wherein said first and second reflow conditions are chosen to create a focal length in said first micro-lenses corresponding to a first wavelength of light and to create a focal length in said second micro-lenses corresponding to a second wavelength of light.
50. The method of claim 46 , wherein said patterning a first set of micro-lens material comprises patterning the first set of micro-lens material into a first plurality of portions arranged in a checkerboard pattern, the checkerboard pattern including spaces between said portions.
51. The method of claim 50 , wherein said patterning a second set of micro-lens material comprises patterning the second set of micro-lens material into a second plurality of portions in a complementary checkerboard pattern filling in said spaces between the plurality of portions of the first set of micro-lens material.
52. The method of claim 51 , wherein said patterning a second set of micro-lens material comprises patterning the second set of micro-lens material overlapping said first micro-lenses.
53. The method of claim 51 , wherein said second plurality of portions comprise portions having a size no smaller than the size of the portions in the first plurality of patterns.
54. The method of claim 46 , further comprising:
patterning a third set of micro-lens material onto the substrate;
reflowing the third set of micro-lens material; and
curing the third set of micro-lens material to form a third set of micro-lenses including a plurality of third micro-lenses.
55. The method of claim 54 , wherein the patternings and reflow conditions of said first set, second set, and third set of micro-lens material create a micro-lens array having at least approximately no space between adjacent micro-lenses.
Priority Applications (2)
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---|---|---|---|
US11/041,406 US20050128596A1 (en) | 2003-10-09 | 2005-01-25 | Method for balancing color response of imagers |
US13/589,492 US8795559B2 (en) | 2003-10-09 | 2012-08-20 | Method for forming imagers |
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US10/681,308 US7227692B2 (en) | 2003-10-09 | 2003-10-09 | Method and apparatus for balancing color response of imagers |
US11/041,406 US20050128596A1 (en) | 2003-10-09 | 2005-01-25 | Method for balancing color response of imagers |
Related Parent Applications (1)
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US10/681,308 Division US7227692B2 (en) | 2003-10-09 | 2003-10-09 | Method and apparatus for balancing color response of imagers |
Related Child Applications (1)
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US13/589,492 Continuation US8795559B2 (en) | 2003-10-09 | 2012-08-20 | Method for forming imagers |
Publications (1)
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US20050128596A1 true US20050128596A1 (en) | 2005-06-16 |
Family
ID=34422257
Family Applications (3)
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US10/681,308 Expired - Lifetime US7227692B2 (en) | 2003-10-09 | 2003-10-09 | Method and apparatus for balancing color response of imagers |
US11/041,406 Abandoned US20050128596A1 (en) | 2003-10-09 | 2005-01-25 | Method for balancing color response of imagers |
US13/589,492 Expired - Lifetime US8795559B2 (en) | 2003-10-09 | 2012-08-20 | Method for forming imagers |
Family Applications Before (1)
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Family Applications After (1)
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US (3) | US7227692B2 (en) |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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US20070026564A1 (en) * | 2005-07-08 | 2007-02-01 | Hsin-Ping Wu | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor |
US20070284511A1 (en) * | 2006-06-08 | 2007-12-13 | Funai Electric Co., Ltd. | Compound-Eye Imaging Device |
US20080060854A1 (en) * | 2006-08-03 | 2008-03-13 | New York University | Retroreflection based multitouch sensor |
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Publication number | Priority date | Publication date | Assignee | Title |
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Citations (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5074649A (en) * | 1989-07-25 | 1991-12-24 | Nippon Sheet Glass Co., Ltd. | Plate with lens array |
US5238856A (en) * | 1991-12-19 | 1993-08-24 | Kabushiki Kaisha Toshiba | Method of manufacturing solid-state image pick-up device |
US5466926A (en) * | 1992-01-27 | 1995-11-14 | Kabushiki Kaisha Toshiba | Colored microlens array and method of manufacturing same |
US5493143A (en) * | 1993-07-23 | 1996-02-20 | Nec Corporation | Solid color image pickup device |
US5536455A (en) * | 1994-01-03 | 1996-07-16 | Omron Corporation | Method of manufacturing lens array |
US5955753A (en) * | 1995-08-02 | 1999-09-21 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus and image pickup apparatus |
US6140630A (en) * | 1998-10-14 | 2000-10-31 | Micron Technology, Inc. | Vcc pump for CMOS imagers |
US6188094B1 (en) * | 1998-03-19 | 2001-02-13 | Canon Kabushiki Kaisha | Solid-state image pickup device |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
US6326652B1 (en) * | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
US6333205B1 (en) * | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
US6376868B1 (en) * | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US20020140832A1 (en) * | 2001-03-29 | 2002-10-03 | Eastman Kodak Company | Optimization of CCD microlens size for color balancing |
US20020176037A1 (en) * | 1998-03-31 | 2002-11-28 | Zong-Fu Li | Method for creating a color microlens |
US6611036B2 (en) * | 1999-06-03 | 2003-08-26 | Intel Corporation | Microlens for surface mount products |
US6643386B1 (en) * | 2000-08-10 | 2003-11-04 | Omnivision Technologies, Inc. | Method and apparatus for adding watermarks to images and/or video data streams |
US6734031B2 (en) * | 2002-05-16 | 2004-05-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and manufacturing method for solid-state imaging device |
US6737719B1 (en) * | 2002-10-25 | 2004-05-18 | Omnivision International Holding Ltd | Image sensor having combination color filter and concave-shaped micro-lenses |
US20040223071A1 (en) * | 2003-05-08 | 2004-11-11 | David Wells | Multiple microlens system for image sensors or display units |
US6829087B2 (en) * | 1998-04-15 | 2004-12-07 | Bright View Technologies, Inc. | Micro-lens array based light transmitting screen with tunable gain |
US20040246351A1 (en) * | 2003-06-09 | 2004-12-09 | Hiatt William M. | Imager with tuned color filter |
US20040263985A1 (en) * | 2003-06-26 | 2004-12-30 | Boettiger Ulrich C. | Micro-lenses and method for increasing area coverage and controlling shape of micro lenses |
US6947088B2 (en) * | 2000-05-16 | 2005-09-20 | Canon Kabushiki Kaisha | Image pickup apparatus having a common amplifier |
US7053952B2 (en) * | 2001-09-18 | 2006-05-30 | Canon Kabushiki Kaisha | Image pickup apparatus |
US7110034B2 (en) * | 2001-08-31 | 2006-09-19 | Canon Kabushiki Kaisha | Image pickup apparatus containing light adjustment portion with reflection of a portion of light onto adjacent pixels |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3677977B2 (en) | 1997-12-25 | 2005-08-03 | ソニー株式会社 | Method for forming a microlens |
JP2000260968A (en) * | 1999-03-04 | 2000-09-22 | Toppan Printing Co Ltd | Solid-state imaging device and method of manufacturing the same |
JP3524425B2 (en) * | 1999-04-01 | 2004-05-10 | キヤノン株式会社 | Method for manufacturing mold or mold master for micro structure array, method for fabricating micro structure array manufactured using the mold or mold master |
JP3524424B2 (en) * | 1999-04-01 | 2004-05-10 | キヤノン株式会社 | Mold or mold master for microstructure array, and method of manufacturing the same |
US6362513B2 (en) * | 1999-07-08 | 2002-03-26 | Intel Corporation | Conformal color filter layer above microlens structures in an image sensor die |
US6821810B1 (en) * | 2000-08-07 | 2004-11-23 | Taiwan Semiconductor Manufacturing Company | High transmittance overcoat for optimization of long focal length microlens arrays in semiconductor color imagers |
US20030111700A1 (en) * | 2001-11-02 | 2003-06-19 | Bencuya Selim S. | Method and article of manufacture for micro-lens resulting from multi-stage fabrication technique |
US7199931B2 (en) * | 2003-10-09 | 2007-04-03 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
US7375892B2 (en) * | 2003-10-09 | 2008-05-20 | Micron Technology, Inc. | Ellipsoidal gapless microlens array and method of fabrication |
US7227692B2 (en) | 2003-10-09 | 2007-06-05 | Micron Technology, Inc | Method and apparatus for balancing color response of imagers |
US7307788B2 (en) * | 2004-12-03 | 2007-12-11 | Micron Technology, Inc. | Gapless microlens array and method of fabrication |
KR20070087847A (en) * | 2005-12-28 | 2007-08-29 | 동부일렉트로닉스 주식회사 | CMOS image sensor and its manufacturing method |
KR100731128B1 (en) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Manufacturing Method of CMOS Image Sensor |
CN102713687B (en) * | 2010-01-25 | 2014-11-12 | 日产化学工业株式会社 | Microlens production method |
-
2003
- 2003-10-09 US US10/681,308 patent/US7227692B2/en not_active Expired - Lifetime
-
2005
- 2005-01-25 US US11/041,406 patent/US20050128596A1/en not_active Abandoned
-
2012
- 2012-08-20 US US13/589,492 patent/US8795559B2/en not_active Expired - Lifetime
Patent Citations (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5074649A (en) * | 1989-07-25 | 1991-12-24 | Nippon Sheet Glass Co., Ltd. | Plate with lens array |
US5238856A (en) * | 1991-12-19 | 1993-08-24 | Kabushiki Kaisha Toshiba | Method of manufacturing solid-state image pick-up device |
US5466926A (en) * | 1992-01-27 | 1995-11-14 | Kabushiki Kaisha Toshiba | Colored microlens array and method of manufacturing same |
US5493143A (en) * | 1993-07-23 | 1996-02-20 | Nec Corporation | Solid color image pickup device |
US5536455A (en) * | 1994-01-03 | 1996-07-16 | Omron Corporation | Method of manufacturing lens array |
US5955753A (en) * | 1995-08-02 | 1999-09-21 | Canon Kabushiki Kaisha | Solid-state image pickup apparatus and image pickup apparatus |
US6188094B1 (en) * | 1998-03-19 | 2001-02-13 | Canon Kabushiki Kaisha | Solid-state image pickup device |
US20020176037A1 (en) * | 1998-03-31 | 2002-11-28 | Zong-Fu Li | Method for creating a color microlens |
US6829087B2 (en) * | 1998-04-15 | 2004-12-07 | Bright View Technologies, Inc. | Micro-lens array based light transmitting screen with tunable gain |
US6140630A (en) * | 1998-10-14 | 2000-10-31 | Micron Technology, Inc. | Vcc pump for CMOS imagers |
US6611036B2 (en) * | 1999-06-03 | 2003-08-26 | Intel Corporation | Microlens for surface mount products |
US6376868B1 (en) * | 1999-06-15 | 2002-04-23 | Micron Technology, Inc. | Multi-layered gate for a CMOS imager |
US6310366B1 (en) * | 1999-06-16 | 2001-10-30 | Micron Technology, Inc. | Retrograde well structure for a CMOS imager |
US6326652B1 (en) * | 1999-06-18 | 2001-12-04 | Micron Technology, Inc., | CMOS imager with a self-aligned buried contact |
US6852591B2 (en) * | 1999-07-14 | 2005-02-08 | Micron Technology, Inc. | Method of forming CMOS imager with storage capacitor |
US6204524B1 (en) * | 1999-07-14 | 2001-03-20 | Micron Technology, Inc. | CMOS imager with storage capacitor |
US6333205B1 (en) * | 1999-08-16 | 2001-12-25 | Micron Technology, Inc. | CMOS imager with selectively silicided gates |
US6947088B2 (en) * | 2000-05-16 | 2005-09-20 | Canon Kabushiki Kaisha | Image pickup apparatus having a common amplifier |
US6643386B1 (en) * | 2000-08-10 | 2003-11-04 | Omnivision Technologies, Inc. | Method and apparatus for adding watermarks to images and/or video data streams |
US20020140832A1 (en) * | 2001-03-29 | 2002-10-03 | Eastman Kodak Company | Optimization of CCD microlens size for color balancing |
US7110034B2 (en) * | 2001-08-31 | 2006-09-19 | Canon Kabushiki Kaisha | Image pickup apparatus containing light adjustment portion with reflection of a portion of light onto adjacent pixels |
US7053952B2 (en) * | 2001-09-18 | 2006-05-30 | Canon Kabushiki Kaisha | Image pickup apparatus |
US6734031B2 (en) * | 2002-05-16 | 2004-05-11 | Fuji Photo Film Co., Ltd. | Solid-state imaging device and manufacturing method for solid-state imaging device |
US6737719B1 (en) * | 2002-10-25 | 2004-05-18 | Omnivision International Holding Ltd | Image sensor having combination color filter and concave-shaped micro-lenses |
US20040223071A1 (en) * | 2003-05-08 | 2004-11-11 | David Wells | Multiple microlens system for image sensors or display units |
US20040246351A1 (en) * | 2003-06-09 | 2004-12-09 | Hiatt William M. | Imager with tuned color filter |
US20040263985A1 (en) * | 2003-06-26 | 2004-12-30 | Boettiger Ulrich C. | Micro-lenses and method for increasing area coverage and controlling shape of micro lenses |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060138498A1 (en) * | 2004-12-24 | 2006-06-29 | Dongbuanam Semiconductor Inc. | CMOS image sensor and method for manufacturing the same |
US7491993B2 (en) * | 2004-12-24 | 2009-02-17 | Dongbu Electronics Inc. | CMOS image sensor and method for manufacturing the same |
US20070026564A1 (en) * | 2005-07-08 | 2007-02-01 | Hsin-Ping Wu | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor |
US7453056B2 (en) * | 2006-06-08 | 2008-11-18 | Funai Electric Co., Ltd. | Compound-eye imaging device |
US20070284511A1 (en) * | 2006-06-08 | 2007-12-13 | Funai Electric Co., Ltd. | Compound-Eye Imaging Device |
US20080060854A1 (en) * | 2006-08-03 | 2008-03-13 | New York University | Retroreflection based multitouch sensor |
US9348463B2 (en) * | 2006-08-03 | 2016-05-24 | New York University | Retroreflection based multitouch sensor, method and program |
US20080074750A1 (en) * | 2006-09-26 | 2008-03-27 | Dongbu Hitek Co., Ltd. | Image sensor and fabricating method thereof |
US7884435B2 (en) * | 2006-12-11 | 2011-02-08 | Dongbu Hitek Co., Ltd. | Pattern mask for forming microlens, image sensor and fabricating method thereof |
US20080137207A1 (en) * | 2006-12-11 | 2008-06-12 | Dongbu Hitek Co., Ltd. | Pattern mask for forming microlens, image sensor and fabricating method thereof |
US20080150061A1 (en) * | 2006-12-21 | 2008-06-26 | Stmicroelectronics Sa | Producing optical microlenses on a semiconductor device |
US20080165257A1 (en) * | 2007-01-05 | 2008-07-10 | Micron Technology, Inc. | Configurable pixel array system and method |
US20080278610A1 (en) * | 2007-05-11 | 2008-11-13 | Micron Technology, Inc. | Configurable pixel array system and method |
US7812869B2 (en) | 2007-05-11 | 2010-10-12 | Aptina Imaging Corporation | Configurable pixel array system and method |
US20120140333A1 (en) * | 2010-12-07 | 2012-06-07 | John Tomczyk | Lens sheet having lens array formed in pre-selected areas and articles formed therefrom |
US8693101B2 (en) * | 2010-12-07 | 2014-04-08 | Travel Tags, Inc. | Lens sheet having lens array formed in pre-selected areas and articles formed therefrom |
US20140078366A1 (en) * | 2012-09-14 | 2014-03-20 | Aptina Imaging Corporation | Imaging systems with image pixels having varying light collecting areas |
US9172892B2 (en) * | 2012-09-14 | 2015-10-27 | Semiconductor Components Industries, Llc | Imaging systems with image pixels having varying light collecting areas |
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US7227692B2 (en) | 2007-06-05 |
US20120315720A1 (en) | 2012-12-13 |
US8795559B2 (en) | 2014-08-05 |
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