US20040209549A1 - Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces - Google Patents
Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces Download PDFInfo
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- US20040209549A1 US20040209549A1 US10/828,427 US82842704A US2004209549A1 US 20040209549 A1 US20040209549 A1 US 20040209549A1 US 82842704 A US82842704 A US 82842704A US 2004209549 A1 US2004209549 A1 US 2004209549A1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Definitions
- the present invention relates to planarizing machines and methods for dispensing planarizing solutions onto a plurality of locations of a processing pad in the fabrication of microelectronic devices.
- FIG. 1 schematically illustrates a CMP machine 10 with a platen 20 , a carrier assembly 30 , and a planarizing pad 40 .
- the CMP machine 10 may also have an under-pad 25 attached to an upper surface 22 of the platen 20 and the lower surface of the planarizing pad 40 .
- a drive assembly 26 rotates the platen 20 (indicated by arrow F), or it reciprocates the platen 20 back and forth (indicated by arrow G). Since the planarizing pad 40 is attached to the under-pad 25 , the planarizing pad 40 moves with the platen 20 during planarization.
- the carrier assembly 30 has a head 32 to which a workpiece 12 may be attached, or the workpiece 12 may be attached to a resilient pad 34 in the head 32 .
- the head 32 may be a free-floating wafer carrier, or an actuator assembly 36 may be coupled to the head 32 to impart axial and/or rotational motion to the workpiece 12 (indicated by arrows H and I, respectively).
- the planarizing pad 40 and a planarizing solution 44 on the pad 40 collectively define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of the workpiece 12 .
- the planarizing pad 40 can be a soft pad or a hard pad.
- the planarizing pad 40 can also be a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material.
- the planarizing solution 44 is typically a non-abrasive “clean solution” without abrasive particles.
- the planarizing pad 40 can be a non-abrasive pad composed of a polymeric material (e.g., polyurethane), resin, felt or other suitable materials.
- the planarizing solutions 44 used with the non-abrasive planarizing pads are typically abrasive slurries with abrasive particles suspended in a liquid.
- the carrier assembly 30 presses the workpiece 12 face-downward against the polishing medium. More specifically, the carrier assembly 30 generally presses the workpiece 12 against the planarizing liquid 44 on a planarizing surface 42 of the planarizing pad 40 , and the platen 20 and/or the carrier assembly 30 move to rub the workpiece 12 against the planarizing surface 42 . As the workpiece 12 rubs against the planarizing surface 42 , material is removed from the face of the workpiece 12 .
- CMP processes should consistently and accurately produce a uniformly planar surface on the workpiece to enable precise fabrication of circuits and photo-patterns.
- many workpieces develop large “step heights” that create highly topographic surfaces.
- Such highly topographical surfaces can impair the accuracy of subsequent photolithographic procedures and other processes that are necessary for forming sub-micron features.
- it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on topographic surfaces because sub-micron photolithographic equipment generally has a very limited depth of field.
- CMP processes are often used to transform a topographical surface into a highly uniform, planar surface at various stages of manufacturing microelectronic devices on a workpiece.
- CMP processing In the highly competitive semiconductor industry, it is also desirable to maximize the throughput of CMP processing by producing a planar surface on a workpiece as quickly as possible.
- the throughput of CMP processing is a function, at least in part, of the polishing rate of the planarizing cycle and the ability to accurately stop CMP processing at a desired endpoint. Therefore, it is generally desirable for CMP processes to provide (a) a desired polishing rate gradient across the face of a substrate to enhance the planarity of the finished surface, and (b) a reasonably consistent polishing rate during a planarizing cycle to enhance the accuracy of determining the endpoint of a planarizing cycle.
- planarizing machines may not provide consistent polishing rates because of nonuniformities in (a) the distribution of the slurry across the processing pad, (b) the wear of the processing pad, and/or (c) the temperature of the processing pad.
- the distribution of the planarizing solution across the surface of the processing pad may not be uniform because conventional planarizing machines typically discharge the planarizing solution onto a single point at the center of the pad. This causes a thicker layer of planarizing solution to be at the center of the pad than at the perimeter, which may result in different polishing rates across the pad.
- the nonuniform distribution of the planarizing solution may cause the center region of the pad to behave differently than the perimeter region because many low PH solutions used during planarizing cycles are similar to cleaning solutions for removing stains and waste matter from the pads when polishing metallic surfaces. Such low PH planarizing solutions dispersed locally accordingly may change the physical characteristics differently at the center of the pad than at the perimeter.
- the nonuniform distribution of planarizing solution also causes a nonuniform temperature distribution across the pad because the planarizing solution is typically at a different temperature than the processing pads. For example, when the planarizing solution is at a lower temperature than the pad, the temperature near the single dispensing point of the planarizing solution is typically lower than other areas of the processing pad.
- One concern of manufacturing microelectronic workpieces is that the distribution of the planarizing solution can cause variances in the planarized surface of the workpieces.
- an inconsistent distribution of planarizing solution between the workpiece and the pad can cause certain areas of the workpiece to planarize faster than other areas.
- Nonuniform pad wear and nonuniform temperature distributions across the processing pad can also cause inconsistent planarizing results that (a) reduce the planarity and uniformity of the planarized surface on the workpieces, and (b) reduce the accuracy of endpointing the planarizing cycles. Therefore, it would be desirable to develop more consistent planarizing procedures and machines to provide more accurate planarization of microelectronic workpieces.
- the present invention describes machines with solution dispensers for use in chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces.
- a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece.
- the carrier assembly can further include a drive assembly that carries the head.
- the machine can also include a solution dispenser separate from the head.
- the solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support.
- the fluid discharge unit is configured to simultaneously discharge a planarizing solution onto a plurality of separate locations across the pad.
- the solution dispenser comprises an elongated support extending over the pad at a location spaced apart from a travel path of the head, a fluid passageway carried by the support through which the planarizing solution can flow, and a plurality of nozzles carried by the support.
- the nozzles are in fluid communication with the fluid passageway to create a plurality of flows of planarizing solution that are discharged onto separate locations across the processing pad.
- An alternate embodiment of a machine in accordance with the invention includes a solution dispenser comprising an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support through which a planarizing solution can flow, and an elongated slot extending along at least a portion of the support.
- the elongated slot is in fluid communication with the fluid passageway to create an elongated flow of planarizing solution.
- Another alternative embodiment includes an elongated support having a channel extending along at least a portion of the support through which the planarizing solution can flow and a lip along at least a portion of the channel over which the planarizing solution can flow. The lip accordingly defines a weir for depositing an elongated flow of planarizing solution across a portion of the pad.
- inventions of solution dispensers for the planarizing machine comprise an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support, a first fluid discharge unit, and a second fluid discharge unit.
- the elongated support of these embodiments can include a first section and a second section.
- the first fluid discharge unit can be carried at the first section of the support to discharge a first flow of the planarizing solution onto a first location of the pad.
- the second fluid discharge unit can be carried by the second section of the support to discharge a second flow of the planarizing solution onto a second location of the pad.
- the first and second fluid discharge units can be independently controllable from one another so that the first flow of planarizing solution discharged onto the first location of the pad is different than the second flow of planarizing solution discharged onto the second location of the pad.
- FIG. 1 is a cross-sectional view of a planarizing machine in accordance with the prior art in which selected components are shown schematically.
- FIG. 2 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIGS. 3A-3C are cross-sectional views showing an embodiment of a planarizing solution dispenser in accordance with the invention.
- FIG. 4 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with another embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 5 is a top plan view of the planarizing system of FIG. 4.
- FIG. 6 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 7 is a front cross-sectional view of a portion of the planarizing solution dispenser of FIG. 6.
- FIG. 8 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 9 is a side elevation view of an embodiment of a planarizing solution dispenser in accordance with the embodiment of FIG. 8.
- FIG. 10 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 11 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- the following disclosure describes planarizing machines with planarizing solution dispensers and methods for planarizing microelectronic workpieces.
- the microelectronic workpieces can be semiconductor wafers, field emission displays, read/write media, and many other workpieces that have microelectronic devices with miniature components (e.g., integrated circuits). Many of the details of the invention are described below with reference to rotary planarizing applications to provide a thorough understanding of such embodiments.
- the present invention can also be practiced using web-format planarizing machines and electrochemical-mechanical planarizing/deposition machines. Suitable web-format planarizing machines that can be adapted for use with the present invention include U.S. patent application Ser. Nos.
- FIG. 2 is a cross-sectional view of a planarizing system 100 having a planarizing solution dispenser 160 that discharges a planarizing solution 150 in accordance with an embodiment of the invention.
- the planarizing machine 100 has a table 114 with a top panel 116 .
- the top panel 116 is generally a rigid plate to provide a flat, solid surface for supporting a processing pad.
- the table 114 is a rotating platen that is driven by a drive assembly 118 .
- the planarizing machine 100 also includes a workpiece carrier assembly 130 that controls and protects a microelectronic workpiece 131 during planarization or electrochemical-mechanical planarization/deposition processes.
- the carrier assembly 130 can include a workpiece holder 132 to pick up, hold and release the workpiece 131 at appropriate stages of a planarizing cycle and/or a conditioning cycle.
- the workpiece carrier assembly 130 also generally has a backing member 134 contacting the backside of the workpiece 131 and an actuator assembly 136 coupled to the workpiece holder 132 .
- the actuator assembly 136 can move the workpiece holder 132 vertically (arrow H), rotate the workpiece holder 132 (arrow 1 ), and/or translate the workpiece holder 132 laterally. In a typical operation, the actuator assembly 136 moves the workpiece holder 132 to press the workpiece 131 against a processing pad 140 .
- the processing pad 140 shown in FIG. 2 has a planarizing medium 142 and a contact surface 144 for selectively removing material from the surface of the workpiece 131 .
- the planarizing medium 142 can have a binder 145 and a plurality of abrasive particles 146 distributed throughout at least a portion of the binder 145 .
- the binder 145 is generally a resin or another suitable material, and the abrasive particles 146 are generally alumina, ceria, titania, silica or other suitable abrasive particles. At least some of the abrasive particles 146 are partially exposed at the contact surface 144 of the processing pad 140 : Suitable fixed-abrasive planarizing pads are disclosed in U.S. Pat.
- the processing pad 140 can be a non-abrasive pad without abrasive particles, such as a Rodel OXB 3000 “Sycamore” polishing pad manufactured by Rodel Corporation.
- the Sycamore pad is a hard pad with trenches for macro-scale slurry transportation underneath the workpiece 131 .
- the contact surface 144 can be a flat surface, or it can have a pattern of micro-features, trenches, and/or other features.
- the dispenser 160 is configured to discharge the planarizing solution 150 onto a plurality of separate locations of the pad 140 .
- the dispenser 160 includes a support 162 extending over a portion of the pad 140 and a fluid discharge unit or distributor 164 (shown schematically) carried by the support 162 .
- the support 162 can be an elongated arm that is attached to an actuator 166 that moves the support 162 relative to the pad 140 .
- the distributor 164 can discharge a flow of the planarizing solution 150 onto the contact surface 144 of the pad 140 .
- the distributor 164 for example, can be an elongated slot or a plurality of other openings extending along a bottom portion of the support 162 .
- the distributor 164 creates an elongated flow of planarizing solution 150 that simultaneously contacts an elongated portion of the contact surface 144 of the pad 140 .
- the dispenser 160 accordingly discharges the planarizing solution onto a plurality of separate points or areas of the contact surface 144 .
- FIG. 3A is a top cross-sectional view showing the embodiment of the dispenser 160 of FIG. 2 along line 3 A- 3 A.
- the support 162 has a fluid passageway 168 for receiving the planarizing solution from a reservoir (not shown in FIG. 3A).
- the fluid passageway 168 can have a proximal section 167 a through which the planarizing solution flows into the support and a distal section 167 b defining a cavity over the processing pad 140 .
- the distributor 164 in this embodiment can have an elongated slot 169 along the bottom of the support 162 and a valve 170 within the distal section 167 b of the fluid passageway 168 .
- the valve 170 has a cavity 172 , and the planarizing fluid can flow through the proximal section 167 a and into the cavity 172 of the valve 170 .
- the valve 170 operates to open and close the elongated slot 169 for controlling the flow of planarizing solution onto the contact surface 144 .
- FIGS. 3B and 3C are cross-sectional views of the dispenser 160 taken along line 3 B- 3 B shown in FIG. 3A.
- the valve 170 can fit within the distal section 167 b so that an outer wall of the valve 170 engages or otherwise faces an inner wall of the distal section 167 b.
- the valve 170 can have an elongated slot 174 or a plurality of holes extending along a portion of the valve.
- FIG. 3B illustrates the valve 170 in an open position in which the slot 174 in the valve 170 is at least partially aligned with the elongated,slot 169 in the support 162 so that a fluid F can flow through the slot 169 .
- FIG. 3B illustrates the valve 170 in an open position in which the slot 174 in the valve 170 is at least partially aligned with the elongated,slot 169 in the support 162 so that a fluid F can flow through the slot 169 .
- 3C illustrates the valve 170 in a closed position in which the slot 174 is not aligned with the elongated slot 169 so that the valve 170 prevents the planarizing solution from flowing through the distributor 164 .
- a motor or other actuator (not shown) can rotate the valve 170 within the arm 162 to open and close the slot 169 .
- planarizing machine 100 shown in FIG. 2 are expected to provide better planarizing results because the dispenser 160 is expected to provide a uniform coating of planarizing solution 150 across the contact surface 144 of the pad 140 .
- the planarizing solution 150 is deposited onto a plurality of separate areas of the contact surface 144 .
- the centrifugal force drives planarizing solution 150 off the perimeter of the pad.
- the wide coverage of the discharge area for the planarizing solution 150 and the spinning motion of the pad 140 act together to provide a distribution of planarizing solution across the pad 140 that is expected to have a uniform thickness.
- planarizing machine 100 are expected to provide more uniform pad wear and temperature distribution across the contact surface 144 of the pad 140 . Therefore, several embodiments of the planarizing machine 100 are expected to provide consistent planarizing results by reducing variances in planarizing parameters caused by a nonuniform distribution of planarizing solution.
- FIGS. 4 and 5 illustrate the planarizing machine 200 having a solution dispenser 260 in accordance with another embodiment of the invention.
- the table 114 , the drive assembly 118 and the carrier assembly 130 can be similar to those described above with reference to FIG. 2, and thus like reference numbers refer to like components in FIGS. 2-5.
- the dispenser 260 includes a support 262 and a plurality of nozzles 264 carried by the support 262 .
- the nozzles 264 are in fluid communication with a fluid passageway 268 that is also carried by the support 262 .
- the nozzles 264 can be configured to produce gentle, low-velocity flows of planarizing solution 250 .
- planarizing solution 250 is pumped through the fluid passageway 268 and through the nozzles 264 .
- the nozzles 264 accordingly define a distributor that discharges the planarizing solution 250 onto a plurality of locations of the pad 140 .
- the planarizing machine 200 is expected to have several of the same advantages as the planarizing machine 100 described above.
- FIGS. 6 and 7 show a dispenser 360 in accordance with another embodiment of the invention for use with a planarizing machine 300 .
- the dispenser 360 has a support 362 with a fluid passageway 368 that extends into a weir 370 .
- FIG. 7 is a cross-sectional view of the support 362 taken along line 7 - 7 of FIG. 6.
- the weir 370 includes a channel or trough 372 that is in fluid communication with the fluid passageway 368 and a lip 374 at the top of the trough 372 .
- a planarizing fluid 350 flows through the fluid passageway 368 and fills the trough 372 until the planarizing solution 350 flows over the lip 374 .
- the dispenser 360 discharges the planarizing solution 350 onto a plurality of separate locations of the contact surface 144 .
- Several embodiments of the dispenser 360 are expected to operate in a manner similar to the dispensers 160 and 260 explained above.
- FIG. 8 shows a planarizing machine 400 having a distributor 460 in accordance with another embodiment of the invention.
- the distributor 460 includes a support 462 , a first fluid discharge unit 464 a carried by a first section of the support 462 , and a second fluid discharge unit 464 b carried by a second section of the support 462 .
- the dispenser 460 can further include a fluid passageway 468 coupled to each of the first and second discharge units 464 a and 464 b.
- the dispenser 460 also includes a controller 480 coupled to the fluid passageway 468 and/or each of the first and second fluid discharge units 464 a and 464 b.
- the controller 480 independently controls the flow of the planarizing solution to the first and second fluid discharge units 464 a and 464 b.
- the first fluid discharge unit 464 a can accordingly discharge a first flow of planarizing fluid 450 a
- the second fluid discharge unit 464 b can discharge a second flow of planarizing fluid 450 b.
- the controller 480 can vary the first and second flows 450 a and 450 b of planarizing solution so that the planarizing solution is discharged onto the contact surface 144 in a manner that provides a desired distribution of the planarizing solution across the pad 140 .
- the controller 480 can be a computer, and each of the fluid discharge units 464 a and 464 b can be separate nozzles, slots, weirs, or other structures that can independently discharge separate fluid flows onto the pad 140 .
- planarizing machine 400 is expected to provide good control of planarizing parameters.
- the distributor 460 and the controller 480 can be manipulated to change the distribution of the planarizing solution across the surface of the pad according to the actual planarizing results or parameters that are measured during a planarizing cycle.
- the planarizing machine can create a desired nonuniform distribution of planarizing solution across the pad 140 to compensate for variances in other planarizing parameters. Therefore, several embodiments of the planarizing machine 400 are expected to provide additional control of the planarizing parameters to consistently produce high-quality planarized surfaces.
- FIG. 9 illustrates a dispenser 560 in accordance with another embodiment of the invention that can be used with the controller 480 of FIG. 8.
- the dispenser 560 includes a support 562 extending over the pad 140 and a plurality of nozzles 564 (identified individually be reference numbers 564 a - c ) carried by the support 562 .
- the support 562 can be an arm that is attached to an actuator or a fixed support relative to the pad 140 .
- the nozzles 564 can include at least a first nozzle 564 a defining a first fluid discharge unit and a second nozzle 564 b defining a second fluid discharge unit.
- the nozzles 564 can also include a third nozzle 564 c defining a third fluid discharge unit or any other suitable number of nozzles.
- the dispenser 560 also includes a fluid passageway 568 and a plurality of control valves 570 (identified individually by reference numbers 570 a - c ) coupled between the fluid passageway 568 and the nozzles 564 .
- the control valves include a first control valve 570 a coupled to the first nozzle 564 a, a second control valve 570 b coupled to the second nozzle 564 b, and a third control valve 570 c coupled to the third nozzle 564 c.
- the control valves 570 can be solenoid valves that are operatively coupled to the controller (not shown in FIG. 9) by signal lines 572 a - c.
- a planarizing solution flows through the fluid passageway 568 to the control valves 570 , and the controller adjusts the control valves 570 to provide a plurality of separate planarizing solution flows 574 a - c from the nozzles 564 a - c.
- the controller can adjust the control valves according to real-time input from sensors during the planarizing cycles of the workpieces and/or from data based upon previous planarizing cycles. This allows the nozzles 564 a - c to independently discharge the planarizing solution flows 574 a - c onto separate regions R 1 -R 3 across the pad 140 to compensate for nonuniformities in planarizing parameters across the pad 140 .
- the controller can send a signal to the first control valve 570 a to reduce the first planarizing solution flow 574 a from the first nozzle 564 a.
- the controller can send a signal to the first control valve 570 a to reduce the first planarizing solution flow 574 a from the first nozzle 564 a.
- FIG. 10 shows a planarizing machine 600 in accordance with another embodiment of the invention.
- the planarizing machine 600 can have several components that are similar to the planarizing machine 400 shown in FIG. 8, and thus like reference numbers refer to like components in FIGS. 8 and 10.
- the dispenser 460 in FIG. 10 can be similar to the dispenser 560 of FIG. 9.
- the planarizing machine 600 also includes a sensor assembly 610 that senses a planarizing parameter relative to areas or regions on the contact surface 144 of the pad 140 .
- the sensor assembly 610 can be embedded in the pad 140 , between the pad 140 and the support surface 116 , and/or embedded in the support surface 116 of the table 114 .
- the sensor assembly 610 can include temperature sensors that sense the temperature at the contact surface 144 , pressure sensors that sense localized forces exerted against the contact surface 144 , and/or drag force sensors between the workpiece 131 and the contact surface 144 .
- Suitable sensor assemblies are disclosed in U.S. patent application Nos. 6,207,764; 6,046,111; 5,036,015; and 5,069,602; and U.S. application Ser. Nos. 09/386,648 and 09/387,309, all of which are herein incorporated by reference.
- the sensor assembly can be a sensor 612 positioned above the pad 140 .
- the sensor 612 can be an infrared sensor to measure the temperature gradient across the contact surface, or the sensor 612 can be an optical sensor for sensing another type of parameter.
- the sensor assembly 610 and the sensor 612 can be coupled to the controller 480 to provide feedback signals of the sensed planarizing parameter.
- the sensor assembly 610 senses the planarizing parameter (i.e., temperature, pressure and/or drag force) and sends a corresponding signal to the controller 480 .
- the sensor assembly 610 can sense the differences in the planarizing parameter across the contact surface 144 and send signals to the controller 480 corresponding to a distribution of the planarizing parameter across the contact surface 144 .
- the controller 480 then sends command signals to the fluid discharge units 464 a and 464 b according to the sensed planarizing parameters to independently adjust the flow rates of the planarizing solution flows 450 a and 450 b in a manner that brings or maintains the planarizing parameter within a desired range.
- FIG. 11 shows a planarizing machine 700 having a distributor 760 and a controller 780 coupled to the distributor 760 in accordance with another embodiment of the present invention.
- the distributor 760 includes a support 762 and a fluid discharge unit 764 moveably coupled to the support 762 .
- the fluid discharge unit 764 can be slidably coupled to the support 762 to translate along the length of the support 762 (indicated by arrow T).
- the fluid discharge unit 764 can be rotatably carried by the support 762 (arrow R).
- the dispenser 760 can further include an actuator 767 coupled to the fluid discharge unit 764 , and the support 762 can be a track along which the fluid discharge unit 764 can translate.
- the actuator 767 can be a servomotor or a linear actuator that drives the fluid discharge unit 764 along the support 762 .
- the actuator 767 can also rotate the fluid discharge unit 764 relative to the support 762 in lieu of, or in addition to, translating the fluid discharge unit 764 along the support 762 .
- the dispenser 760 can also include a fluid passageway 768 coupled to the fluid discharge unit 764 .
- the fluid passageway 768 can be a flexible hose that coils up or elongates according to the movement of the fluid discharge unit 764 along the support 762 .
- the controller 780 is coupled to the actuator 767 to control the motion of the fluid discharge unit 764 relative to the support 762 .
- the controller 780 can send command signals to the actuator 767 to increase or decrease the velocity of the relative motion between the fluid discharge unit 764 and the arm 762 to adjust the volume of planarizing solution deposited onto different areas of the contact surface 144 of the pad 140 .
- This embodiment allows a single flow of planarizing solution 750 to have different flow characteristics according to the desired distribution of planarizing solution across the contact surface 144 .
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Abstract
Machines with solution dispensers and methods of using such machines for chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that manipulates the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to discharge a planarizing solution onto a plurality of separate locations across the pad.
Description
- The present invention relates to planarizing machines and methods for dispensing planarizing solutions onto a plurality of locations of a processing pad in the fabrication of microelectronic devices.
- Mechanical and chemical-mechanical planarizing processes (collectively “CMP”) remove material from the surface of semiconductor wafers, field emission displays, read/write heads or other microelectronic workpieces in the production of microelectronic devices and other products. FIG. 1 schematically illustrates a
CMP machine 10 with aplaten 20, acarrier assembly 30, and a planarizingpad 40. TheCMP machine 10 may also have an under-pad 25 attached to anupper surface 22 of theplaten 20 and the lower surface of the planarizingpad 40. Adrive assembly 26 rotates the platen 20 (indicated by arrow F), or it reciprocates theplaten 20 back and forth (indicated by arrow G). Since theplanarizing pad 40 is attached to the under-pad 25, theplanarizing pad 40 moves with theplaten 20 during planarization. - The
carrier assembly 30 has ahead 32 to which aworkpiece 12 may be attached, or theworkpiece 12 may be attached to aresilient pad 34 in thehead 32. Thehead 32 may be a free-floating wafer carrier, or anactuator assembly 36 may be coupled to thehead 32 to impart axial and/or rotational motion to the workpiece 12 (indicated by arrows H and I, respectively). - The
planarizing pad 40 and a planarizingsolution 44 on thepad 40 collectively define a planarizing medium that mechanically and/or chemically-mechanically removes material from the surface of theworkpiece 12. The planarizingpad 40 can be a soft pad or a hard pad. The planarizingpad 40 can also be a fixed-abrasive planarizing pad in which abrasive particles are fixedly bonded to a suspension material. In fixed-abrasive applications, theplanarizing solution 44 is typically a non-abrasive “clean solution” without abrasive particles. In other applications, theplanarizing pad 40 can be a non-abrasive pad composed of a polymeric material (e.g., polyurethane), resin, felt or other suitable materials. The planarizingsolutions 44 used with the non-abrasive planarizing pads are typically abrasive slurries with abrasive particles suspended in a liquid. - To planarize the
workpiece 12 with theCMP machine 10, thecarrier assembly 30 presses theworkpiece 12 face-downward against the polishing medium. More specifically, thecarrier assembly 30 generally presses theworkpiece 12 against the planarizingliquid 44 on a planarizingsurface 42 of theplanarizing pad 40, and theplaten 20 and/or thecarrier assembly 30 move to rub theworkpiece 12 against theplanarizing surface 42. As theworkpiece 12 rubs against theplanarizing surface 42, material is removed from the face of theworkpiece 12. - CMP processes should consistently and accurately produce a uniformly planar surface on the workpiece to enable precise fabrication of circuits and photo-patterns. During the construction of transistors, contacts, interconnects and other features, many workpieces develop large “step heights” that create highly topographic surfaces. Such highly topographical surfaces can impair the accuracy of subsequent photolithographic procedures and other processes that are necessary for forming sub-micron features. For example, it is difficult to accurately focus photo patterns to within tolerances approaching 0.1 micron on topographic surfaces because sub-micron photolithographic equipment generally has a very limited depth of field. Thus, CMP processes are often used to transform a topographical surface into a highly uniform, planar surface at various stages of manufacturing microelectronic devices on a workpiece.
- In the highly competitive semiconductor industry, it is also desirable to maximize the throughput of CMP processing by producing a planar surface on a workpiece as quickly as possible. The throughput of CMP processing is a function, at least in part, of the polishing rate of the planarizing cycle and the ability to accurately stop CMP processing at a desired endpoint. Therefore, it is generally desirable for CMP processes to provide (a) a desired polishing rate gradient across the face of a substrate to enhance the planarity of the finished surface, and (b) a reasonably consistent polishing rate during a planarizing cycle to enhance the accuracy of determining the endpoint of a planarizing cycle.
- Conventional planarizing machines may not provide consistent polishing rates because of nonuniformities in (a) the distribution of the slurry across the processing pad, (b) the wear of the processing pad, and/or (c) the temperature of the processing pad. The distribution of the planarizing solution across the surface of the processing pad may not be uniform because conventional planarizing machines typically discharge the planarizing solution onto a single point at the center of the pad. This causes a thicker layer of planarizing solution to be at the center of the pad than at the perimeter, which may result in different polishing rates across the pad. Additionally, the nonuniform distribution of the planarizing solution may cause the center region of the pad to behave differently than the perimeter region because many low PH solutions used during planarizing cycles are similar to cleaning solutions for removing stains and waste matter from the pads when polishing metallic surfaces. Such low PH planarizing solutions dispersed locally accordingly may change the physical characteristics differently at the center of the pad than at the perimeter. The nonuniform distribution of planarizing solution also causes a nonuniform temperature distribution across the pad because the planarizing solution is typically at a different temperature than the processing pads. For example, when the planarizing solution is at a lower temperature than the pad, the temperature near the single dispensing point of the planarizing solution is typically lower than other areas of the processing pad.
- One concern of manufacturing microelectronic workpieces is that the distribution of the planarizing solution can cause variances in the planarized surface of the workpieces. For example, an inconsistent distribution of planarizing solution between the workpiece and the pad can cause certain areas of the workpiece to planarize faster than other areas. Nonuniform pad wear and nonuniform temperature distributions across the processing pad can also cause inconsistent planarizing results that (a) reduce the planarity and uniformity of the planarized surface on the workpieces, and (b) reduce the accuracy of endpointing the planarizing cycles. Therefore, it would be desirable to develop more consistent planarizing procedures and machines to provide more accurate planarization of microelectronic workpieces.
- The present invention describes machines with solution dispensers for use in chemical-mechanical planarization and/or electrochemical-mechanical planarization/deposition of microelectronic workpieces. One embodiment of such a machine includes a table having a support surface, a processing pad on the support surface, and a carrier assembly having a head configured to hold a microelectronic workpiece. The carrier assembly can further include a drive assembly that carries the head. The machine can also include a solution dispenser separate from the head. The solution dispenser can include a support extending over the pad and a fluid discharge unit or distributor carried by the support. The fluid discharge unit is configured to simultaneously discharge a planarizing solution onto a plurality of separate locations across the pad.
- In one particular embodiment, the solution dispenser comprises an elongated support extending over the pad at a location spaced apart from a travel path of the head, a fluid passageway carried by the support through which the planarizing solution can flow, and a plurality of nozzles carried by the support. The nozzles are in fluid communication with the fluid passageway to create a plurality of flows of planarizing solution that are discharged onto separate locations across the processing pad. An alternate embodiment of a machine in accordance with the invention includes a solution dispenser comprising an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support through which a planarizing solution can flow, and an elongated slot extending along at least a portion of the support. The elongated slot is in fluid communication with the fluid passageway to create an elongated flow of planarizing solution. Another alternative embodiment includes an elongated support having a channel extending along at least a portion of the support through which the planarizing solution can flow and a lip along at least a portion of the channel over which the planarizing solution can flow. The lip accordingly defines a weir for depositing an elongated flow of planarizing solution across a portion of the pad.
- Other embodiments of solution dispensers for the planarizing machine comprise an elongated support extending over the pad at a location spaced apart from the travel path of the head, a fluid passageway carried by the support, a first fluid discharge unit, and a second fluid discharge unit. The elongated support of these embodiments can include a first section and a second section. The first fluid discharge unit can be carried at the first section of the support to discharge a first flow of the planarizing solution onto a first location of the pad. The second fluid discharge unit can be carried by the second section of the support to discharge a second flow of the planarizing solution onto a second location of the pad. The first and second fluid discharge units can be independently controllable from one another so that the first flow of planarizing solution discharged onto the first location of the pad is different than the second flow of planarizing solution discharged onto the second location of the pad.
- FIG. 1 is a cross-sectional view of a planarizing machine in accordance with the prior art in which selected components are shown schematically.
- FIG. 2 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIGS. 3A-3C are cross-sectional views showing an embodiment of a planarizing solution dispenser in accordance with the invention.
- FIG. 4 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with another embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 5 is a top plan view of the planarizing system of FIG. 4.
- FIG. 6 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 7 is a front cross-sectional view of a portion of the planarizing solution dispenser of FIG. 6.
- FIG. 8 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 9 is a side elevation view of an embodiment of a planarizing solution dispenser in accordance with the embodiment of FIG. 8.
- FIG. 10 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- FIG. 11 is a side elevation view of a planarizing system including a planarizing solution dispenser in accordance with an embodiment of the invention with selected components shown in cross-section or schematically.
- The following disclosure describes planarizing machines with planarizing solution dispensers and methods for planarizing microelectronic workpieces. The microelectronic workpieces can be semiconductor wafers, field emission displays, read/write media, and many other workpieces that have microelectronic devices with miniature components (e.g., integrated circuits). Many of the details of the invention are described below with reference to rotary planarizing applications to provide a thorough understanding of such embodiments. The present invention, however, can also be practiced using web-format planarizing machines and electrochemical-mechanical planarizing/deposition machines. Suitable web-format planarizing machines that can be adapted for use with the present invention include U.S. patent application Ser. Nos. 09/595,727 and 09/565,639, which are herein incorporated by reference. A suitable electrochemical-mechanical planarizing/deposition machine that can be adapted for use is shown in U.S. Pat. No. 6,176,992, which is also herein incorporated by reference. A person skilled in the art will thus understand that the invention may10 have additional embodiments, or that the invention may be practiced without several of the details described below.
- FIG. 2 is a cross-sectional view of a
planarizing system 100 having aplanarizing solution dispenser 160 that discharges aplanarizing solution 150 in accordance with an embodiment of the invention. Theplanarizing machine 100 has a table 114 with atop panel 116. Thetop panel 116 is generally a rigid plate to provide a flat, solid surface for supporting a processing pad. In this embodiment, the table 114 is a rotating platen that is driven by adrive assembly 118. - The
planarizing machine 100 also includes aworkpiece carrier assembly 130 that controls and protects amicroelectronic workpiece 131 during planarization or electrochemical-mechanical planarization/deposition processes. Thecarrier assembly 130 can include aworkpiece holder 132 to pick up, hold and release theworkpiece 131 at appropriate stages of a planarizing cycle and/or a conditioning cycle. Theworkpiece carrier assembly 130 also generally has abacking member 134 contacting the backside of theworkpiece 131 and anactuator assembly 136 coupled to theworkpiece holder 132. Theactuator assembly 136 can move theworkpiece holder 132 vertically (arrow H), rotate the workpiece holder 132 (arrow 1), and/or translate theworkpiece holder 132 laterally. In a typical operation, theactuator assembly 136 moves theworkpiece holder 132 to press theworkpiece 131 against aprocessing pad 140. - The
processing pad 140 shown in FIG. 2 has aplanarizing medium 142 and acontact surface 144 for selectively removing material from the surface of theworkpiece 131. Theplanarizing medium 142 can have abinder 145 and a plurality ofabrasive particles 146 distributed throughout at least a portion of thebinder 145. Thebinder 145 is generally a resin or another suitable material, and theabrasive particles 146 are generally alumina, ceria, titania, silica or other suitable abrasive particles. At least some of theabrasive particles 146 are partially exposed at thecontact surface 144 of the processing pad 140: Suitable fixed-abrasive planarizing pads are disclosed in U.S. Pat. Nos. 5,645,471; 5,879,222; 5,624,303; and U.S. patent application Ser. Nos. 09-164,916 and 09-001,333; all of which are herein incorporated by reference. In other embodiments theprocessing pad 140 can be a non-abrasive pad without abrasive particles, such as a Rodel OXB 3000 “Sycamore” polishing pad manufactured by Rodel Corporation. The Sycamore pad is a hard pad with trenches for macro-scale slurry transportation underneath theworkpiece 131. Thecontact surface 144 can be a flat surface, or it can have a pattern of micro-features, trenches, and/or other features. - Referring still to FIG. 2, the
dispenser 160 is configured to discharge theplanarizing solution 150 onto a plurality of separate locations of thepad 140. In this embodiment, thedispenser 160 includes asupport 162 extending over a portion of thepad 140 and a fluid discharge unit or distributor 164 (shown schematically) carried by thesupport 162. Thesupport 162 can be an elongated arm that is attached to anactuator 166 that moves thesupport 162 relative to thepad 140. Thedistributor 164 can discharge a flow of theplanarizing solution 150 onto thecontact surface 144 of thepad 140. Thedistributor 164, for example, can be an elongated slot or a plurality of other openings extending along a bottom portion of thesupport 162. In this embodiment, thedistributor 164 creates an elongated flow ofplanarizing solution 150 that simultaneously contacts an elongated portion of thecontact surface 144 of thepad 140. Thedispenser 160 accordingly discharges the planarizing solution onto a plurality of separate points or areas of thecontact surface 144. - FIG. 3A is a top cross-sectional view showing the embodiment of the
dispenser 160 of FIG. 2 alongline 3A-3A. In this embodiment, thesupport 162 has afluid passageway 168 for receiving the planarizing solution from a reservoir (not shown in FIG. 3A). Thefluid passageway 168 can have aproximal section 167 a through which the planarizing solution flows into the support and adistal section 167 b defining a cavity over theprocessing pad 140. Thedistributor 164 in this embodiment can have an elongatedslot 169 along the bottom of thesupport 162 and avalve 170 within thedistal section 167 b of thefluid passageway 168. Thevalve 170 has acavity 172, and the planarizing fluid can flow through theproximal section 167 a and into thecavity 172 of thevalve 170. Thevalve 170 operates to open and close theelongated slot 169 for controlling the flow of planarizing solution onto thecontact surface 144. - FIGS. 3B and 3C are cross-sectional views of the
dispenser 160 taken alongline 3B-3B shown in FIG. 3A. Referring to FIG. 3B, thevalve 170 can fit within thedistal section 167 b so that an outer wall of thevalve 170 engages or otherwise faces an inner wall of thedistal section 167 b. Thevalve 170 can have an elongatedslot 174 or a plurality of holes extending along a portion of the valve. FIG. 3B illustrates thevalve 170 in an open position in which theslot 174 in thevalve 170 is at least partially aligned with the elongated,slot 169 in thesupport 162 so that a fluid F can flow through theslot 169. FIG. 3C illustrates thevalve 170 in a closed position in which theslot 174 is not aligned with theelongated slot 169 so that thevalve 170 prevents the planarizing solution from flowing through thedistributor 164. In operation, a motor or other actuator (not shown) can rotate thevalve 170 within thearm 162 to open and close theslot 169. - Several embodiments of the
planarizing machine 100 shown in FIG. 2 are expected to provide better planarizing results because thedispenser 160 is expected to provide a uniform coating ofplanarizing solution 150 across thecontact surface 144 of thepad 140. By discharging theplanarizing solution 150 along an elongated line across thepad 140, theplanarizing solution 150 is deposited onto a plurality of separate areas of thecontact surface 144. As thepad 140 rotates, the centrifugal force drivesplanarizing solution 150 off the perimeter of the pad. The wide coverage of the discharge area for theplanarizing solution 150 and the spinning motion of thepad 140 act together to provide a distribution of planarizing solution across thepad 140 that is expected to have a uniform thickness. As a result, several embodiments of theplanarizing machine 100 are expected to provide more uniform pad wear and temperature distribution across thecontact surface 144 of thepad 140. Therefore, several embodiments of theplanarizing machine 100 are expected to provide consistent planarizing results by reducing variances in planarizing parameters caused by a nonuniform distribution of planarizing solution. - FIGS. 4 and 5 illustrate the
planarizing machine 200 having asolution dispenser 260 in accordance with another embodiment of the invention. The table 114, thedrive assembly 118 and thecarrier assembly 130 can be similar to those described above with reference to FIG. 2, and thus like reference numbers refer to like components in FIGS. 2-5. In this embodiment, thedispenser 260 includes asupport 262 and a plurality ofnozzles 264 carried by thesupport 262. Thenozzles 264 are in fluid communication with afluid passageway 268 that is also carried by thesupport 262. Thenozzles 264 can be configured to produce gentle, low-velocity flows ofplanarizing solution 250. In operation, theplanarizing solution 250 is pumped through thefluid passageway 268 and through thenozzles 264. Thenozzles 264 accordingly define a distributor that discharges theplanarizing solution 250 onto a plurality of locations of thepad 140. Theplanarizing machine 200 is expected to have several of the same advantages as theplanarizing machine 100 described above. - FIGS. 6 and 7 show a
dispenser 360 in accordance with another embodiment of the invention for use with aplanarizing machine 300. Referring to FIG. 6, thedispenser 360 has asupport 362 with afluid passageway 368 that extends into aweir 370. FIG. 7 is a cross-sectional view of thesupport 362 taken along line 7-7 of FIG. 6. Referring to FIG. 7, theweir 370 includes a channel ortrough 372 that is in fluid communication with thefluid passageway 368 and alip 374 at the top of thetrough 372. In operation, aplanarizing fluid 350 flows through thefluid passageway 368 and fills thetrough 372 until theplanarizing solution 350 flows over thelip 374. As shown in FIG. 6, thedispenser 360 discharges theplanarizing solution 350 onto a plurality of separate locations of thecontact surface 144. Several embodiments of thedispenser 360 are expected to operate in a manner similar to thedispensers - FIG. 8 shows a
planarizing machine 400 having adistributor 460 in accordance with another embodiment of the invention. In this embodiment, thedistributor 460 includes asupport 462, a firstfluid discharge unit 464 a carried by a first section of thesupport 462, and a secondfluid discharge unit 464 b carried by a second section of thesupport 462. Thedispenser 460 can further include afluid passageway 468 coupled to each of the first andsecond discharge units dispenser 460 also includes acontroller 480 coupled to thefluid passageway 468 and/or each of the first and secondfluid discharge units - In operation, the
controller 480 independently controls the flow of the planarizing solution to the first and secondfluid discharge units fluid discharge unit 464 a can accordingly discharge a first flow of planarizing fluid 450 a, and the secondfluid discharge unit 464 b can discharge a second flow ofplanarizing fluid 450 b. Thecontroller 480 can vary the first andsecond flows contact surface 144 in a manner that provides a desired distribution of the planarizing solution across thepad 140. For example, if the temperature at the perimeter portion of theprocessing pad 140 is greater than the central portion, then thefirst fluid flow 450 a can be increased and/or thesecond fluid flow 450 b can be decreased so that more planarizing solution is deposited onto the perimeter portion of theprocessing pad 140 relative to the central portion to dissipate more heat from perimeter portion of thepad 140. Thecontroller 480 can be a computer, and each of thefluid discharge units pad 140. - Several embodiments of the
planarizing machine 400 are expected to provide good control of planarizing parameters. By independently discharging separate fluid flows onto thepad 140, thedistributor 460 and thecontroller 480 can be manipulated to change the distribution of the planarizing solution across the surface of the pad according to the actual planarizing results or parameters that are measured during a planarizing cycle. As such, the planarizing machine can create a desired nonuniform distribution of planarizing solution across thepad 140 to compensate for variances in other planarizing parameters. Therefore, several embodiments of theplanarizing machine 400 are expected to provide additional control of the planarizing parameters to consistently produce high-quality planarized surfaces. - FIG. 9 illustrates a
dispenser 560 in accordance with another embodiment of the invention that can be used with thecontroller 480 of FIG. 8. In this embodiment, thedispenser 560 includes asupport 562 extending over thepad 140 and a plurality of nozzles 564 (identified individually be reference numbers 564 a-c) carried by thesupport 562. Thesupport 562 can be an arm that is attached to an actuator or a fixed support relative to thepad 140. The nozzles 564 can include at least afirst nozzle 564 a defining a first fluid discharge unit and asecond nozzle 564 b defining a second fluid discharge unit. The nozzles 564 can also include athird nozzle 564 c defining a third fluid discharge unit or any other suitable number of nozzles. Thedispenser 560 also includes afluid passageway 568 and a plurality of control valves 570 (identified individually by reference numbers 570 a-c) coupled between thefluid passageway 568 and the nozzles 564. In this embodiment, the control valves include afirst control valve 570 a coupled to thefirst nozzle 564 a, asecond control valve 570 b coupled to thesecond nozzle 564 b, and athird control valve 570 c coupled to thethird nozzle 564 c. The control valves 570 can be solenoid valves that are operatively coupled to the controller (not shown in FIG. 9) by signal lines 572 a-c. - In operation, a planarizing solution flows through the
fluid passageway 568 to the control valves 570, and the controller adjusts the control valves 570 to provide a plurality of separate planarizing solution flows 574 a-c from the nozzles 564 a-c. The controller can adjust the control valves according to real-time input from sensors during the planarizing cycles of the workpieces and/or from data based upon previous planarizing cycles. This allows the nozzles 564 a-c to independently discharge the planarizing solution flows 574 a-c onto separate regions R1-R3 across thepad 140 to compensate for nonuniformities in planarizing parameters across thepad 140. For example, if region R1 requires less planarizing solution than region R2, then the controller can send a signal to thefirst control valve 570 a to reduce the first planarizing solution flow 574 a from thefirst nozzle 564 a. This is only an example, and it will be appreciated that many different combinations of flows can be configured by selecting the desired flow rates through the control valves 570. - FIG. 10 shows a
planarizing machine 600 in accordance with another embodiment of the invention. Theplanarizing machine 600 can have several components that are similar to theplanarizing machine 400 shown in FIG. 8, and thus like reference numbers refer to like components in FIGS. 8 and 10. Additionally, thedispenser 460 in FIG. 10 can be similar to thedispenser 560 of FIG. 9. Theplanarizing machine 600 also includes asensor assembly 610 that senses a planarizing parameter relative to areas or regions on thecontact surface 144 of thepad 140. Thesensor assembly 610 can be embedded in thepad 140, between thepad 140 and thesupport surface 116, and/or embedded in thesupport surface 116 of the table 114. Thesensor assembly 610 can include temperature sensors that sense the temperature at thecontact surface 144, pressure sensors that sense localized forces exerted against thecontact surface 144, and/or drag force sensors between theworkpiece 131 and thecontact surface 144. Suitable sensor assemblies are disclosed in U.S. patent application Nos. 6,207,764; 6,046,111; 5,036,015; and 5,069,602; and U.S. application Ser. Nos. 09/386,648 and 09/387,309, all of which are herein incorporated by reference. In an alternate embodiment, the sensor assembly can be asensor 612 positioned above thepad 140. Thesensor 612 can be an infrared sensor to measure the temperature gradient across the contact surface, or thesensor 612 can be an optical sensor for sensing another type of parameter. Thesensor assembly 610 and thesensor 612 can be coupled to thecontroller 480 to provide feedback signals of the sensed planarizing parameter. - In the operation of the
planarizing machine 600, thesensor assembly 610 senses the planarizing parameter (i.e., temperature, pressure and/or drag force) and sends a corresponding signal to thecontroller 480. Thesensor assembly 610, for example, can sense the differences in the planarizing parameter across thecontact surface 144 and send signals to thecontroller 480 corresponding to a distribution of the planarizing parameter across thecontact surface 144. Thecontroller 480 then sends command signals to thefluid discharge units - FIG. 11 shows a
planarizing machine 700 having adistributor 760 and acontroller 780 coupled to thedistributor 760 in accordance with another embodiment of the present invention. In this embodiment, thedistributor 760 includes asupport 762 and afluid discharge unit 764 moveably coupled to thesupport 762. Thefluid discharge unit 764 can be slidably coupled to thesupport 762 to translate along the length of the support 762 (indicated by arrow T). In an alternate embodiment, thefluid discharge unit 764 can be rotatably carried by the support 762 (arrow R). Thedispenser 760 can further include anactuator 767 coupled to thefluid discharge unit 764, and thesupport 762 can be a track along which thefluid discharge unit 764 can translate. Theactuator 767 can be a servomotor or a linear actuator that drives thefluid discharge unit 764 along thesupport 762. Theactuator 767 can also rotate thefluid discharge unit 764 relative to thesupport 762 in lieu of, or in addition to, translating thefluid discharge unit 764 along thesupport 762. Thedispenser 760 can also include afluid passageway 768 coupled to thefluid discharge unit 764. Thefluid passageway 768 can be a flexible hose that coils up or elongates according to the movement of thefluid discharge unit 764 along thesupport 762. - The
controller 780 is coupled to theactuator 767 to control the motion of thefluid discharge unit 764 relative to thesupport 762. Thecontroller 780 can send command signals to theactuator 767 to increase or decrease the velocity of the relative motion between thefluid discharge unit 764 and thearm 762 to adjust the volume of planarizing solution deposited onto different areas of thecontact surface 144 of thepad 140. This embodiment allows a single flow of planarizing solution 750 to have different flow characteristics according to the desired distribution of planarizing solution across thecontact surface 144. - From the foregoing, it will be appreciated that specific embodiments of the invention have been described herein for purposes of illustration, but that various modifications may be made without deviating from the spirit and scope of the invention. Accordingly, the invention is not limited except as by the appended claims.
Claims (14)
1-6. (Canceled)
7. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface; and
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a plurality of locations on the pad, wherein the solution dispenser comprises:_an elongated support extending over the pad at a location spaced apart from a travel path of the head; a fluid passageway carried by the support through which a planarizing solution can flow; and a fluid discharge unit slidably carried by the support and in fluid communication with the fluid passageway, the fluid discharge unit being moveable along the support to discharge a flow of the planarizing solution onto separate areas of the processing pad.
8. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head relative to the support surface; and
a solution dispenser separate from the head, the solution dispenser being configured to discharge a planarizing solution onto a plurality of locations on the pad, wherein the solution dispenser comprises, a support extending over the pad at a location spaced apart from a travel path of the heads, a fluid passageway carried by the support through which a planarizing solution can flows, and a nozzle carried by the support and in fluid communication with the fluid passageway, the nozzle being rotatably coupled to the support.
9-17. (Canceled)
18. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head; and
a solution dispenser separate from the head, the solution dispenser having a support extending over the Pad and a distributor carried by the support, the distributor being configured to discharge a planarizing solution from a plurality of locations along the support, wherein the support comprises an elongated arm and a fluid passageway carried by the arm through which a planarizing solution can flows, and the distributor further comprises a fluid discharge unit slidably carried by the arm and in fluid communication with the fluid passageway, the fluid discharge unit being moveable along the arm to discharge a flow of the planarizing solution along different areas of the processing pad.
19. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head; and
a solution dispenser separate from the head, the solution dispenser having a support extending over the pad and a distributor carried by the support, the distributor being configured to discharge a planarizing solution from a plurality of locations along the support, wherein the support comprises an elongated arm and a fluid passageway carried by the arm through which a planarizing solution can flow, and the distributor further comprises a nozzle carried by the arm and in fluid communication with the fluid passageway, the nozzle being rotatably coupled to the arm.
20. A planarizing machine, comprising:
a table having a support surface;
a processing pad on the support surface;
a carrier assembly having a head configured to hold a microelectronic workpiece and a drive assembly carrying the head; and
a solution dispenser having support above the pad and a nozzle moveably coupled to the support, the nozzle being coupleable to a planarizing solution.
21. The planarizing machine of claim 20 wherein:
the support comprises an elongated arm and a fluid passageway carried by the arm through which a planarizing solution can flow; and
the nozzle is slidably carried by the arm and in fluid communication with the fluid passageway.
22. The planarizing machine of claim 20 wherein:
the support comprises an elongated arm and a fluid passageway carried by the arm through which a planarizing solution can flow; and
the nozzle is rotatably coupled to the arm.
23-51. (Canceled)
52. A method of processing a microelectronic workpiece, comprising:
removing material from the workpiece by pressing the workpiece against a contact surface of a processing pad and imparting relative motion between the workpiece and the contact surface; and
discharging a planarizing solution directly onto a first region of the contact surface and concurrently discharging the planarizing solution directly onto a second region of the contact surface separate from the first region, the planarizing solution being deposited onto the first and second regions separate from a head carrying the workpiece, wherein discharging the planarizing solution comprises (a) passing the planarizing solution through a fluid discharge unit that is moveably carried by a support over the processing pad and (b) concurrently moving the fluid discharge unit relative to the support to discharge the planarizing fluid at different regions across the contact surface.
53. The method of claim 52 wherein moving the fluid discharge unit comprises sliding the fluid discharge unit along the support.
54. The method of claim 52 wherein moving the fluid discharge unit comprises rotating the fluid discharge unit about a pivot point on the support.
55. (Canceled)
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US09/939,430 Expired - Lifetime US6722943B2 (en) | 2001-08-24 | 2001-08-24 | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US10/828,403 Expired - Fee Related US7210989B2 (en) | 2001-08-24 | 2004-04-20 | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US10/828,017 Abandoned US20040209548A1 (en) | 2001-08-24 | 2004-04-20 | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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Families Citing this family (27)
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---|---|---|---|---|
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Citations (85)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5186394A (en) * | 1990-10-02 | 1993-02-16 | Nippon Thompson Co., Ltd. | Remote controlled freely pivotal nozzle |
US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US5297364A (en) * | 1990-01-22 | 1994-03-29 | Micron Technology, Inc. | Polishing pad with controlled abrasion rate |
US5486129A (en) * | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5514245A (en) * | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
US5609718A (en) * | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5616069A (en) * | 1995-12-19 | 1997-04-01 | Micron Technology, Inc. | Directional spray pad scrubber |
US5618381A (en) * | 1992-01-24 | 1997-04-08 | Micron Technology, Inc. | Multiple step method of chemical-mechanical polishing which minimizes dishing |
US5618447A (en) * | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5730642A (en) * | 1993-08-25 | 1998-03-24 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical montoring |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
US5736427A (en) * | 1996-10-08 | 1998-04-07 | Micron Technology, Inc. | Polishing pad contour indicator for mechanical or chemical-mechanical planarization |
US5738567A (en) * | 1996-08-20 | 1998-04-14 | Micron Technology, Inc. | Polishing pad for chemical-mechanical planarization of a semiconductor wafer |
US5747386A (en) * | 1996-10-03 | 1998-05-05 | Micron Technology, Inc. | Rotary coupling |
US5868896A (en) * | 1996-11-06 | 1999-02-09 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US5871392A (en) * | 1996-06-13 | 1999-02-16 | Micron Technology, Inc. | Under-pad for chemical-mechanical planarization of semiconductor wafers |
US5879226A (en) * | 1996-05-21 | 1999-03-09 | Micron Technology, Inc. | Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5882248A (en) * | 1995-12-15 | 1999-03-16 | Micron Technology, Inc. | Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5887757A (en) * | 1997-01-31 | 1999-03-30 | Nordson Corporation | Rotary angled nozzle for heated fluid dispensers |
US5893754A (en) * | 1996-05-21 | 1999-04-13 | Micron Technology, Inc. | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
US5895550A (en) * | 1996-12-16 | 1999-04-20 | Micron Technology, Inc. | Ultrasonic processing of chemical mechanical polishing slurries |
US6036586A (en) * | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
US6040245A (en) * | 1992-12-11 | 2000-03-21 | Micron Technology, Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
US6039633A (en) * | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6050884A (en) * | 1996-02-28 | 2000-04-18 | Ebara Corporation | Polishing apparatus |
US6054015A (en) * | 1996-10-31 | 2000-04-25 | Micron Technology, Inc. | Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine |
US6053801A (en) * | 1999-05-10 | 2000-04-25 | Applied Materials, Inc. | Substrate polishing with reduced contamination |
US6060395A (en) * | 1996-07-17 | 2000-05-09 | Micron Technology, Inc. | Planarization method using a slurry including a dispersant |
US6062958A (en) * | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6066030A (en) * | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
US6176992B1 (en) * | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US6176763B1 (en) * | 1999-02-04 | 2001-01-23 | Micron Technology, Inc. | Method and apparatus for uniformly planarizing a microelectronic substrate |
US6180525B1 (en) * | 1998-08-19 | 2001-01-30 | Micron Technology, Inc. | Method of minimizing repetitive chemical-mechanical polishing scratch marks and of processing a semiconductor wafer outer surface |
US6179693B1 (en) * | 1998-10-06 | 2001-01-30 | International Business Machines Corporation | In-situ/self-propelled polishing pad conditioner and cleaner |
US6187681B1 (en) * | 1998-10-14 | 2001-02-13 | Micron Technology, Inc. | Method and apparatus for planarization of a substrate |
US6191037B1 (en) * | 1998-09-03 | 2001-02-20 | Micron Technology, Inc. | Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
US6193588B1 (en) * | 1998-09-02 | 2001-02-27 | Micron Technology, Inc. | Method and apparatus for planarizing and cleaning microelectronic substrates |
US6196899B1 (en) * | 1999-06-21 | 2001-03-06 | Micron Technology, Inc. | Polishing apparatus |
US6200901B1 (en) * | 1998-06-10 | 2001-03-13 | Micron Technology, Inc. | Polishing polymer surfaces on non-porous CMP pads |
US6203407B1 (en) * | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
US6203413B1 (en) * | 1999-01-13 | 2001-03-20 | Micron Technology, Inc. | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6203404B1 (en) * | 1999-06-03 | 2001-03-20 | Micron Technology, Inc. | Chemical mechanical polishing methods |
US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6206754B1 (en) * | 1999-08-31 | 2001-03-27 | Micron Technology, Inc. | Endpoint detection apparatus, planarizing machines with endpointing apparatus, and endpointing methods for mechanical or chemical-mechanical planarization of microelectronic substrate assemblies |
US6206757B1 (en) * | 1997-12-04 | 2001-03-27 | Micron Technology, Inc. | Polishing systems, methods of polishing substrates, and methods of preparing liquids for semiconductor fabrication processes |
US6206759B1 (en) * | 1998-11-30 | 2001-03-27 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
US6210257B1 (en) * | 1998-05-29 | 2001-04-03 | Micron Technology, Inc. | Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6213845B1 (en) * | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6220934B1 (en) * | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
US6224466B1 (en) * | 1998-02-02 | 2001-05-01 | Micron Technology, Inc. | Methods of polishing materials, methods of slowing a rate of material removal of a polishing process |
US6227955B1 (en) * | 1999-04-20 | 2001-05-08 | Micron Technology, Inc. | Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6234877B1 (en) * | 1997-06-09 | 2001-05-22 | Micron Technology, Inc. | Method of chemical mechanical polishing |
US6234874B1 (en) * | 1998-01-05 | 2001-05-22 | Micron Technology, Inc. | Wafer processing apparatus |
US6338667B2 (en) * | 1993-08-25 | 2002-01-15 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US6338669B1 (en) * | 1997-12-26 | 2002-01-15 | Ebara Corporation | Polishing device |
US20020022440A1 (en) * | 2000-04-06 | 2002-02-21 | Takaharu Kunugi | Supply of controlled amount of polishing slurry to semiconductor wafers |
US6350691B1 (en) * | 1997-12-22 | 2002-02-26 | Micron Technology, Inc. | Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media |
US6350180B2 (en) * | 1999-08-31 | 2002-02-26 | Micron Technology, Inc. | Methods for predicting polishing parameters of polishing pads, and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization |
US6350183B2 (en) * | 1999-08-10 | 2002-02-26 | International Business Machines Corporation | High pressure cleaning |
US6352466B1 (en) * | 1998-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements |
US6352470B2 (en) * | 1999-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates |
US6354930B1 (en) * | 1997-12-30 | 2002-03-12 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6354919B2 (en) * | 1999-08-31 | 2002-03-12 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6358129B2 (en) * | 1998-11-11 | 2002-03-19 | Micron Technology, Inc. | Backing members and planarizing machines for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods of making and using such backing members |
US6358122B1 (en) * | 1999-08-31 | 2002-03-19 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives |
US6361417B2 (en) * | 1999-08-31 | 2002-03-26 | Micron Technology, Inc. | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US6364749B1 (en) * | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
US6368190B1 (en) * | 2000-01-26 | 2002-04-09 | Agere Systems Guardian Corp. | Electrochemical mechanical planarization apparatus and method |
US6376381B1 (en) * | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
US6511576B2 (en) * | 1999-11-17 | 2003-01-28 | Micron Technology, Inc. | System for planarizing microelectronic substrates having apertures |
US20030027505A1 (en) * | 2001-08-02 | 2003-02-06 | Applied Materials, Inc. | Multiport polishing fluid delivery system |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6533893B2 (en) * | 1999-09-02 | 2003-03-18 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6548407B1 (en) * | 2000-04-26 | 2003-04-15 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6547640B2 (en) * | 2000-03-23 | 2003-04-15 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6551174B1 (en) * | 1998-09-25 | 2003-04-22 | Applied Materials, Inc. | Supplying slurry to a polishing pad in a chemical mechanical polishing system |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6878232B2 (en) * | 2002-12-17 | 2005-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for improving a temperature controlled solution delivery process |
US6884152B2 (en) * | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
Family Cites Families (93)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2557106A (en) * | 1946-04-12 | 1951-06-19 | Francis B Hughes | High-pressure oil-nozzle for grindings |
US4530463A (en) | 1982-08-05 | 1985-07-23 | Hiniker Company | Control method and apparatus for liquid distributor |
US5234867A (en) | 1992-05-27 | 1993-08-10 | Micron Technology, Inc. | Method for planarizing semiconductor wafers with a non-circular polishing pad |
JPH03225921A (en) | 1990-01-31 | 1991-10-04 | Nkk Corp | Method and apparatus for mirror-polishing semiconductor wafer |
USRE34425E (en) | 1990-08-06 | 1993-11-02 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5069002A (en) | 1991-04-17 | 1991-12-03 | Micron Technology, Inc. | Apparatus for endpoint detection during mechanical planarization of semiconductor wafers |
US5240552A (en) | 1991-12-11 | 1993-08-31 | Micron Technology, Inc. | Chemical mechanical planarization (CMP) of a semiconductor wafer using acoustical waves for in-situ end point detection |
US5196353A (en) * | 1992-01-03 | 1993-03-23 | Micron Technology, Inc. | Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer |
US5244534A (en) | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
US5245790A (en) | 1992-02-14 | 1993-09-21 | Lsi Logic Corporation | Ultrasonic energy enhanced chemi-mechanical polishing of silicon wafers |
US5245796A (en) | 1992-04-02 | 1993-09-21 | At&T Bell Laboratories | Slurry polisher using ultrasonic agitation |
US5225034A (en) | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
US5232875A (en) | 1992-10-15 | 1993-08-03 | Micron Technology, Inc. | Method and apparatus for improving planarity of chemical-mechanical planarization operations |
US5643060A (en) | 1993-08-25 | 1997-07-01 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including heater |
US5456627A (en) | 1993-12-20 | 1995-10-10 | Westech Systems, Inc. | Conditioner for a polishing pad and method therefor |
US5433651A (en) | 1993-12-22 | 1995-07-18 | International Business Machines Corporation | In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing |
JP3036348B2 (en) | 1994-03-23 | 2000-04-24 | 三菱マテリアル株式会社 | Truing device for wafer polishing pad |
US5795495A (en) | 1994-04-25 | 1998-08-18 | Micron Technology, Inc. | Method of chemical mechanical polishing for dielectric layers |
US5449314A (en) | 1994-04-25 | 1995-09-12 | Micron Technology, Inc. | Method of chimical mechanical polishing for dielectric layers |
US5533924A (en) | 1994-09-01 | 1996-07-09 | Micron Technology, Inc. | Polishing apparatus, a polishing wafer carrier apparatus, a replacable component for a particular polishing apparatus and a process of polishing wafers |
JP3734289B2 (en) | 1995-01-24 | 2006-01-11 | 株式会社荏原製作所 | Polishing device |
US5945347A (en) | 1995-06-02 | 1999-08-31 | Micron Technology, Inc. | Apparatus and method for polishing a semiconductor wafer in an overhanging position |
US6110820A (en) | 1995-06-07 | 2000-08-29 | Micron Technology, Inc. | Low scratch density chemical mechanical planarization process |
US5655951A (en) | 1995-09-29 | 1997-08-12 | Micron Technology, Inc. | Method for selectively reconditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5967030A (en) | 1995-11-17 | 1999-10-19 | Micron Technology, Inc. | Global planarization method and apparatus |
US5792709A (en) | 1995-12-19 | 1998-08-11 | Micron Technology, Inc. | High-speed planarizing apparatus and method for chemical mechanical planarization of semiconductor wafers |
US6135856A (en) | 1996-01-19 | 2000-10-24 | Micron Technology, Inc. | Apparatus and method for semiconductor planarization |
US5690540A (en) | 1996-02-23 | 1997-11-25 | Micron Technology, Inc. | Spiral grooved polishing pad for chemical-mechanical planarization of semiconductor wafers |
US5679065A (en) | 1996-02-23 | 1997-10-21 | Micron Technology, Inc. | Wafer carrier having carrier ring adapted for uniform chemical-mechanical planarization of semiconductor wafers |
US6090475A (en) | 1996-05-24 | 2000-07-18 | Micron Technology Inc. | Polishing pad, methods of manufacturing and use |
US5976000A (en) | 1996-05-28 | 1999-11-02 | Micron Technology, Inc. | Polishing pad with incompressible, highly soluble particles for chemical-mechanical planarization of semiconductor wafers |
US5645682A (en) | 1996-05-28 | 1997-07-08 | Micron Technology, Inc. | Apparatus and method for conditioning a planarizing substrate used in chemical-mechanical planarization of semiconductor wafers |
US5681423A (en) | 1996-06-06 | 1997-10-28 | Micron Technology, Inc. | Semiconductor wafer for improved chemical-mechanical polishing over large area features |
US5916819A (en) | 1996-07-17 | 1999-06-29 | Micron Technology, Inc. | Planarization fluid composition chelating agents and planarization method using same |
US5664990A (en) * | 1996-07-29 | 1997-09-09 | Integrated Process Equipment Corp. | Slurry recycling in CMP apparatus |
US5833519A (en) | 1996-08-06 | 1998-11-10 | Micron Technology, Inc. | Method and apparatus for mechanical polishing |
US5795218A (en) | 1996-09-30 | 1998-08-18 | Micron Technology, Inc. | Polishing pad with elongated microcolumns |
US6395620B1 (en) | 1996-10-08 | 2002-05-28 | Micron Technology, Inc. | Method for forming a planar surface over low density field areas on a semiconductor wafer |
US5972792A (en) | 1996-10-18 | 1999-10-26 | Micron Technology, Inc. | Method for chemical-mechanical planarization of a substrate on a fixed-abrasive polishing pad |
US5830806A (en) | 1996-10-18 | 1998-11-03 | Micron Technology, Inc. | Wafer backing member for mechanical and chemical-mechanical planarization of substrates |
US5782675A (en) | 1996-10-21 | 1998-07-21 | Micron Technology, Inc. | Apparatus and method for refurbishing fixed-abrasive polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5930699A (en) | 1996-11-12 | 1999-07-27 | Ericsson Inc. | Address retrieval system |
US5938801A (en) | 1997-02-12 | 1999-08-17 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5807165A (en) | 1997-03-26 | 1998-09-15 | International Business Machines Corporation | Method of electrochemical mechanical planarization |
US6331488B1 (en) | 1997-05-23 | 2001-12-18 | Micron Technology, Inc. | Planarization process for semiconductor substrates |
JP3722591B2 (en) | 1997-05-30 | 2005-11-30 | 株式会社日立製作所 | Polishing equipment |
US5975994A (en) | 1997-06-11 | 1999-11-02 | Micron Technology, Inc. | Method and apparatus for selectively conditioning a polished pad used in planarizng substrates |
US6139406A (en) * | 1997-06-24 | 2000-10-31 | Applied Materials, Inc. | Combined slurry dispenser and rinse arm and method of operation |
US6271139B1 (en) | 1997-07-02 | 2001-08-07 | Micron Technology, Inc. | Polishing slurry and method for chemical-mechanical polishing |
US5997392A (en) * | 1997-07-22 | 1999-12-07 | International Business Machines Corporation | Slurry injection technique for chemical-mechanical polishing |
US6099604A (en) | 1997-08-21 | 2000-08-08 | Micron Technology, Inc. | Slurry with chelating agent for chemical-mechanical polishing of a semiconductor wafer and methods related thereto |
US5919082A (en) | 1997-08-22 | 1999-07-06 | Micron Technology, Inc. | Fixed abrasive polishing pad |
US6491764B2 (en) | 1997-09-24 | 2002-12-10 | Interuniversitair Microelektronics Centrum (Imec) | Method and apparatus for removing a liquid from a surface of a rotating substrate |
US5964413A (en) | 1997-11-05 | 1999-10-12 | Mok; Peter | Apparatus for dispensing slurry |
US5997384A (en) | 1997-12-22 | 1999-12-07 | Micron Technology, Inc. | Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates |
US5990012A (en) | 1998-01-27 | 1999-11-23 | Micron Technology, Inc. | Chemical-mechanical polishing of hydrophobic materials by use of incorporated-particle polishing pads |
US6004196A (en) | 1998-02-27 | 1999-12-21 | Micron Technology, Inc. | Polishing pad refurbisher for in situ, real-time conditioning and cleaning of a polishing pad used in chemical-mechanical polishing of microelectronic substrates |
US6143155A (en) | 1998-06-11 | 2000-11-07 | Speedfam Ipec Corp. | Method for simultaneous non-contact electrochemical plating and planarizing of semiconductor wafers using a bipiolar electrode assembly |
US6152808A (en) | 1998-08-25 | 2000-11-28 | Micron Technology, Inc. | Microelectronic substrate polishing systems, semiconductor wafer polishing systems, methods of polishing microelectronic substrates, and methods of polishing wafers |
US6124207A (en) | 1998-08-31 | 2000-09-26 | Micron Technology, Inc. | Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries |
US6273785B1 (en) | 1998-09-02 | 2001-08-14 | Xerox Corporation | Non-contact support for cyclindrical machining |
US6250994B1 (en) | 1998-10-01 | 2001-06-26 | Micron Technology, Inc. | Methods and apparatuses for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies on planarizing pads |
US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6156659A (en) * | 1998-11-19 | 2000-12-05 | Chartered Semiconductor Manufacturing Ltd. | Linear CMP tool design with closed loop slurry distribution |
US6439977B1 (en) | 1998-12-07 | 2002-08-27 | Chartered Semiconductor Manufacturing Ltd. | Rotational slurry distribution system for rotary CMP system |
JP2000249440A (en) | 1999-02-25 | 2000-09-14 | Dainippon Screen Mfg Co Ltd | Substrate processing apparatus |
US6300247B2 (en) | 1999-03-29 | 2001-10-09 | Applied Materials, Inc. | Preconditioning polishing pads for chemical-mechanical polishing |
US6296557B1 (en) | 1999-04-02 | 2001-10-02 | Micron Technology, Inc. | Method and apparatus for releasably attaching polishing pads to planarizing machines in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
JP4127926B2 (en) * | 1999-04-08 | 2008-07-30 | 株式会社荏原製作所 | Polishing method |
US6599836B1 (en) | 1999-04-09 | 2003-07-29 | Micron Technology, Inc. | Planarizing solutions, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US20030213772A9 (en) | 1999-07-09 | 2003-11-20 | Mok Yeuk-Fai Edwin | Integrated semiconductor substrate bevel cleaning apparatus and method |
US6306012B1 (en) | 1999-07-20 | 2001-10-23 | Micron Technology, Inc. | Methods and apparatuses for planarizing microelectronic substrate assemblies |
US6284092B1 (en) * | 1999-08-06 | 2001-09-04 | International Business Machines Corporation | CMP slurry atomization slurry dispense system |
US6267650B1 (en) | 1999-08-09 | 2001-07-31 | Micron Technology, Inc. | Apparatus and methods for substantial planarization of solder bumps |
US6261163B1 (en) | 1999-08-30 | 2001-07-17 | Micron Technology, Inc. | Web-format planarizing machines and methods for planarizing microelectronic substrate assemblies |
US6306008B1 (en) | 1999-08-31 | 2001-10-23 | Micron Technology, Inc. | Apparatus and method for conditioning and monitoring media used for chemical-mechanical planarization |
US6273796B1 (en) | 1999-09-01 | 2001-08-14 | Micron Technology, Inc. | Method and apparatus for planarizing a microelectronic substrate with a tilted planarizing surface |
US6284660B1 (en) | 1999-09-02 | 2001-09-04 | Micron Technology, Inc. | Method for improving CMP processing |
US6809348B1 (en) | 1999-10-08 | 2004-10-26 | Denso Corporation | Semiconductor device and method for manufacturing the same |
US6331136B1 (en) | 2000-01-25 | 2001-12-18 | Koninklijke Philips Electronics N.V. (Kpenv) | CMP pad conditioner arrangement and method therefor |
US6669538B2 (en) | 2000-02-24 | 2003-12-30 | Applied Materials Inc | Pad cleaning for a CMP system |
US6498101B1 (en) | 2000-02-28 | 2002-12-24 | Micron Technology, Inc. | Planarizing pads, planarizing machines and methods for making and using planarizing pads in mechanical and chemical-mechanical planarization of microelectronic device substrate assemblies |
US6387289B1 (en) | 2000-05-04 | 2002-05-14 | Micron Technology, Inc. | Planarizing machines and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6428386B1 (en) | 2000-06-16 | 2002-08-06 | Micron Technology, Inc. | Planarizing pads, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6447369B1 (en) | 2000-08-30 | 2002-09-10 | Micron Technology, Inc. | Planarizing machines and alignment systems for mechanical and/or chemical-mechanical planarization of microelectronic substrates |
US6609947B1 (en) | 2000-08-30 | 2003-08-26 | Micron Technology, Inc. | Planarizing machines and control systems for mechanical and/or chemical-mechanical planarization of micro electronic substrates |
US6592443B1 (en) | 2000-08-30 | 2003-07-15 | Micron Technology, Inc. | Method and apparatus for forming and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6623329B1 (en) | 2000-08-31 | 2003-09-23 | Micron Technology, Inc. | Method and apparatus for supporting a microelectronic substrate relative to a planarization pad |
US6652764B1 (en) | 2000-08-31 | 2003-11-25 | Micron Technology, Inc. | Methods and apparatuses for making and using planarizing pads for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6398627B1 (en) * | 2001-03-22 | 2002-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | Slurry dispenser having multiple adjustable nozzles |
US6482290B1 (en) | 2001-08-10 | 2002-11-19 | Taiwan Semiconductor Manufacturing Co., Ltd | Sweeping slurry dispenser for chemical mechanical polishing |
US6666749B2 (en) | 2001-08-30 | 2003-12-23 | Micron Technology, Inc. | Apparatus and method for enhanced processing of microelectronic workpieces |
US6939210B2 (en) | 2003-05-02 | 2005-09-06 | Applied Materials, Inc. | Slurry delivery arm |
-
2001
- 2001-08-24 US US09/939,430 patent/US6722943B2/en not_active Expired - Lifetime
-
2004
- 2004-04-20 US US10/828,403 patent/US7210989B2/en not_active Expired - Fee Related
- 2004-04-20 US US10/828,017 patent/US20040209548A1/en not_active Abandoned
- 2004-04-20 US US10/828,427 patent/US20040209549A1/en not_active Abandoned
Patent Citations (99)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5177908A (en) * | 1990-01-22 | 1993-01-12 | Micron Technology, Inc. | Polishing pad |
US5297364A (en) * | 1990-01-22 | 1994-03-29 | Micron Technology, Inc. | Polishing pad with controlled abrasion rate |
US5081796A (en) * | 1990-08-06 | 1992-01-21 | Micron Technology, Inc. | Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer |
US5186394A (en) * | 1990-10-02 | 1993-02-16 | Nippon Thompson Co., Ltd. | Remote controlled freely pivotal nozzle |
US5618381A (en) * | 1992-01-24 | 1997-04-08 | Micron Technology, Inc. | Multiple step method of chemical-mechanical polishing which minimizes dishing |
US5514245A (en) * | 1992-01-27 | 1996-05-07 | Micron Technology, Inc. | Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches |
US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
US6040245A (en) * | 1992-12-11 | 2000-03-21 | Micron Technology, Inc. | IC mechanical planarization process incorporating two slurry compositions for faster material removal times |
US5486129A (en) * | 1993-08-25 | 1996-01-23 | Micron Technology, Inc. | System and method for real-time control of semiconductor a wafer polishing, and a polishing head |
US5730642A (en) * | 1993-08-25 | 1998-03-24 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing including optical montoring |
US6338667B2 (en) * | 1993-08-25 | 2002-01-15 | Micron Technology, Inc. | System for real-time control of semiconductor wafer polishing |
US5609718A (en) * | 1995-09-29 | 1997-03-11 | Micron Technology, Inc. | Method and apparatus for measuring a change in the thickness of polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5882248A (en) * | 1995-12-15 | 1999-03-16 | Micron Technology, Inc. | Apparatus for separating wafers from polishing pads used in chemical-mechanical planarization of semiconductor wafers |
US5616069A (en) * | 1995-12-19 | 1997-04-01 | Micron Technology, Inc. | Directional spray pad scrubber |
US5879222A (en) * | 1996-01-22 | 1999-03-09 | Micron Technology, Inc. | Abrasive polishing pad with covalently bonded abrasive particles |
US5624303A (en) * | 1996-01-22 | 1997-04-29 | Micron Technology, Inc. | Polishing pad and a method for making a polishing pad with covalently bonded particles |
US5618447A (en) * | 1996-02-13 | 1997-04-08 | Micron Technology, Inc. | Polishing pad counter meter and method for real-time control of the polishing rate in chemical-mechanical polishing of semiconductor wafers |
US6050884A (en) * | 1996-02-28 | 2000-04-18 | Ebara Corporation | Polishing apparatus |
US5879226A (en) * | 1996-05-21 | 1999-03-09 | Micron Technology, Inc. | Method for conditioning a polishing pad used in chemical-mechanical planarization of semiconductor wafers |
US5893754A (en) * | 1996-05-21 | 1999-04-13 | Micron Technology, Inc. | Method for chemical-mechanical planarization of stop-on-feature semiconductor wafers |
US5733176A (en) * | 1996-05-24 | 1998-03-31 | Micron Technology, Inc. | Polishing pad and method of use |
US5871392A (en) * | 1996-06-13 | 1999-02-16 | Micron Technology, Inc. | Under-pad for chemical-mechanical planarization of semiconductor wafers |
US6060395A (en) * | 1996-07-17 | 2000-05-09 | Micron Technology, Inc. | Planarization method using a slurry including a dispersant |
US5738567A (en) * | 1996-08-20 | 1998-04-14 | Micron Technology, Inc. | Polishing pad for chemical-mechanical planarization of a semiconductor wafer |
US5747386A (en) * | 1996-10-03 | 1998-05-05 | Micron Technology, Inc. | Rotary coupling |
US5736427A (en) * | 1996-10-08 | 1998-04-07 | Micron Technology, Inc. | Polishing pad contour indicator for mechanical or chemical-mechanical planarization |
US6054015A (en) * | 1996-10-31 | 2000-04-25 | Micron Technology, Inc. | Apparatus for loading and unloading substrates to a chemical-mechanical planarization machine |
US5725417A (en) * | 1996-11-05 | 1998-03-10 | Micron Technology, Inc. | Method and apparatus for conditioning polishing pads used in mechanical and chemical-mechanical planarization of substrates |
US5868896A (en) * | 1996-11-06 | 1999-02-09 | Micron Technology, Inc. | Chemical-mechanical planarization machine and method for uniformly planarizing semiconductor wafers |
US5895550A (en) * | 1996-12-16 | 1999-04-20 | Micron Technology, Inc. | Ultrasonic processing of chemical mechanical polishing slurries |
US5887757A (en) * | 1997-01-31 | 1999-03-30 | Nordson Corporation | Rotary angled nozzle for heated fluid dispensers |
US6062958A (en) * | 1997-04-04 | 2000-05-16 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6186870B1 (en) * | 1997-04-04 | 2001-02-13 | Micron Technology, Inc. | Variable abrasive polishing pad for mechanical and chemical-mechanical planarization |
US6234877B1 (en) * | 1997-06-09 | 2001-05-22 | Micron Technology, Inc. | Method of chemical mechanical polishing |
US6206757B1 (en) * | 1997-12-04 | 2001-03-27 | Micron Technology, Inc. | Polishing systems, methods of polishing substrates, and methods of preparing liquids for semiconductor fabrication processes |
US6354923B1 (en) * | 1997-12-22 | 2002-03-12 | Micron Technology, Inc. | Apparatus for planarizing microelectronic substrates and conditioning planarizing media |
US6350691B1 (en) * | 1997-12-22 | 2002-02-26 | Micron Technology, Inc. | Method and apparatus for planarizing microelectronic substrates and conditioning planarizing media |
US6338669B1 (en) * | 1997-12-26 | 2002-01-15 | Ebara Corporation | Polishing device |
US6354930B1 (en) * | 1997-12-30 | 2002-03-12 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6364757B2 (en) * | 1997-12-30 | 2002-04-02 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates |
US6354917B1 (en) * | 1998-01-05 | 2002-03-12 | Micron Technology, Inc. | Method of processing a wafer utilizing a processing slurry |
US6234874B1 (en) * | 1998-01-05 | 2001-05-22 | Micron Technology, Inc. | Wafer processing apparatus |
US6224466B1 (en) * | 1998-02-02 | 2001-05-01 | Micron Technology, Inc. | Methods of polishing materials, methods of slowing a rate of material removal of a polishing process |
US6210257B1 (en) * | 1998-05-29 | 2001-04-03 | Micron Technology, Inc. | Web-format polishing pads and methods for manufacturing and using web-format polishing pads in mechanical and chemical-mechanical planarization of microelectronic substrates |
US6200901B1 (en) * | 1998-06-10 | 2001-03-13 | Micron Technology, Inc. | Polishing polymer surfaces on non-porous CMP pads |
US6368194B1 (en) * | 1998-07-23 | 2002-04-09 | Micron Technology, Inc. | Apparatus for controlling PH during planarization and cleaning of microelectronic substrates |
US6220934B1 (en) * | 1998-07-23 | 2001-04-24 | Micron Technology, Inc. | Method for controlling pH during planarization and cleaning of microelectronic substrates |
US6036586A (en) * | 1998-07-29 | 2000-03-14 | Micron Technology, Inc. | Apparatus and method for reducing removal forces for CMP pads |
US6180525B1 (en) * | 1998-08-19 | 2001-01-30 | Micron Technology, Inc. | Method of minimizing repetitive chemical-mechanical polishing scratch marks and of processing a semiconductor wafer outer surface |
US6352466B1 (en) * | 1998-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for wireless transfer of chemical-mechanical planarization measurements |
US6193588B1 (en) * | 1998-09-02 | 2001-02-27 | Micron Technology, Inc. | Method and apparatus for planarizing and cleaning microelectronic substrates |
US6368193B1 (en) * | 1998-09-02 | 2002-04-09 | Micron Technology, Inc. | Method and apparatus for planarizing and cleaning microelectronic substrates |
US6358127B1 (en) * | 1998-09-02 | 2002-03-19 | Micron Technology, Inc. | Method and apparatus for planarizing and cleaning microelectronic substrates |
US6203407B1 (en) * | 1998-09-03 | 2001-03-20 | Micron Technology, Inc. | Method and apparatus for increasing-chemical-polishing selectivity |
US20030054651A1 (en) * | 1998-09-03 | 2003-03-20 | Robinson Karl M. | Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
US6191037B1 (en) * | 1998-09-03 | 2001-02-20 | Micron Technology, Inc. | Methods, apparatuses and substrate assembly structures for fabricating microelectronic components using mechanical and chemical-mechanical planarization processes |
US6551174B1 (en) * | 1998-09-25 | 2003-04-22 | Applied Materials, Inc. | Supplying slurry to a polishing pad in a chemical mechanical polishing system |
US6039633A (en) * | 1998-10-01 | 2000-03-21 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6179693B1 (en) * | 1998-10-06 | 2001-01-30 | International Business Machines Corporation | In-situ/self-propelled polishing pad conditioner and cleaner |
US6187681B1 (en) * | 1998-10-14 | 2001-02-13 | Micron Technology, Inc. | Method and apparatus for planarization of a substrate |
US6218316B1 (en) * | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
US6176992B1 (en) * | 1998-11-03 | 2001-01-23 | Nutool, Inc. | Method and apparatus for electro-chemical mechanical deposition |
US6206756B1 (en) * | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
US6358129B2 (en) * | 1998-11-11 | 2002-03-19 | Micron Technology, Inc. | Backing members and planarizing machines for mechanical and chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods of making and using such backing members |
US6206759B1 (en) * | 1998-11-30 | 2001-03-27 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
US6361832B1 (en) * | 1998-11-30 | 2002-03-26 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods for making and using such pads and machines |
US6203413B1 (en) * | 1999-01-13 | 2001-03-20 | Micron Technology, Inc. | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6361413B1 (en) * | 1999-01-13 | 2002-03-26 | Micron Technology, Inc. | Apparatus and methods for conditioning polishing pads in mechanical and/or chemical-mechanical planarization of microelectronic device substrate assemblies |
US6176763B1 (en) * | 1999-02-04 | 2001-01-23 | Micron Technology, Inc. | Method and apparatus for uniformly planarizing a microelectronic substrate |
US6066030A (en) * | 1999-03-04 | 2000-05-23 | International Business Machines Corporation | Electroetch and chemical mechanical polishing equipment |
US6227955B1 (en) * | 1999-04-20 | 2001-05-08 | Micron Technology, Inc. | Carrier heads, planarizing machines and methods for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US6213845B1 (en) * | 1999-04-26 | 2001-04-10 | Micron Technology, Inc. | Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same |
US6053801A (en) * | 1999-05-10 | 2000-04-25 | Applied Materials, Inc. | Substrate polishing with reduced contamination |
US6203404B1 (en) * | 1999-06-03 | 2001-03-20 | Micron Technology, Inc. | Chemical mechanical polishing methods |
US6196899B1 (en) * | 1999-06-21 | 2001-03-06 | Micron Technology, Inc. | Polishing apparatus |
US6361411B1 (en) * | 1999-06-21 | 2002-03-26 | Micron Technology, Inc. | Method for conditioning polishing surface |
US6350183B2 (en) * | 1999-08-10 | 2002-02-26 | International Business Machines Corporation | High pressure cleaning |
US6376381B1 (en) * | 1999-08-31 | 2002-04-23 | Micron Technology, Inc. | Planarizing solutions, planarizing machines, and methods for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6354919B2 (en) * | 1999-08-31 | 2002-03-12 | Micron Technology, Inc. | Polishing pads and planarizing machines for mechanical and/or chemical-mechanical planarization of microelectronic substrate assemblies |
US6352470B2 (en) * | 1999-08-31 | 2002-03-05 | Micron Technology, Inc. | Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates |
US6361400B2 (en) * | 1999-08-31 | 2002-03-26 | Micron Technology, Inc. | Methods for predicting polishing parameters of polishing pads, and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization |
US6350180B2 (en) * | 1999-08-31 | 2002-02-26 | Micron Technology, Inc. | Methods for predicting polishing parameters of polishing pads, and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization |
US6361417B2 (en) * | 1999-08-31 | 2002-03-26 | Micron Technology, Inc. | Method and apparatus for supporting a polishing pad during chemical-mechanical planarization of microelectronic substrates |
US6368197B2 (en) * | 1999-08-31 | 2002-04-09 | Micron Technology, Inc. | Method and apparatus for supporting and cleaning a polishing pad for chemical-mechanical planarization of microelectronic substrates |
US6358122B1 (en) * | 1999-08-31 | 2002-03-19 | Micron Technology, Inc. | Method and apparatus for mechanical and chemical-mechanical planarization of microelectronic substrates with metal compound abrasives |
US6206754B1 (en) * | 1999-08-31 | 2001-03-27 | Micron Technology, Inc. | Endpoint detection apparatus, planarizing machines with endpointing apparatus, and endpointing methods for mechanical or chemical-mechanical planarization of microelectronic substrate assemblies |
US6364749B1 (en) * | 1999-09-02 | 2002-04-02 | Micron Technology, Inc. | CMP polishing pad with hydrophilic surfaces for enhanced wetting |
US6533893B2 (en) * | 1999-09-02 | 2003-03-18 | Micron Technology, Inc. | Method and apparatus for chemical-mechanical planarization of microelectronic substrates with selected planarizing liquids |
US6511576B2 (en) * | 1999-11-17 | 2003-01-28 | Micron Technology, Inc. | System for planarizing microelectronic substrates having apertures |
US6375548B1 (en) * | 1999-12-30 | 2002-04-23 | Micron Technology, Inc. | Chemical-mechanical polishing methods |
US6368190B1 (en) * | 2000-01-26 | 2002-04-09 | Agere Systems Guardian Corp. | Electrochemical mechanical planarization apparatus and method |
US6547640B2 (en) * | 2000-03-23 | 2003-04-15 | Micron Technology, Inc. | Devices and methods for in-situ control of mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies |
US20020022440A1 (en) * | 2000-04-06 | 2002-02-21 | Takaharu Kunugi | Supply of controlled amount of polishing slurry to semiconductor wafers |
US6548407B1 (en) * | 2000-04-26 | 2003-04-15 | Micron Technology, Inc. | Method and apparatus for controlling chemical interactions during planarization of microelectronic substrates |
US6520834B1 (en) * | 2000-08-09 | 2003-02-18 | Micron Technology, Inc. | Methods and apparatuses for analyzing and controlling performance parameters in mechanical and chemical-mechanical planarization of microelectronic substrates |
US20030027505A1 (en) * | 2001-08-02 | 2003-02-06 | Applied Materials, Inc. | Multiport polishing fluid delivery system |
US6722943B2 (en) * | 2001-08-24 | 2004-04-20 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US6878232B2 (en) * | 2002-12-17 | 2005-04-12 | Taiwan Semiconductor Manufacturing Co., Ltd | Method and apparatus for improving a temperature controlled solution delivery process |
US6884152B2 (en) * | 2003-02-11 | 2005-04-26 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040198184A1 (en) * | 2001-08-24 | 2004-10-07 | Joslyn Michael J | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US7210989B2 (en) | 2001-08-24 | 2007-05-01 | Micron Technology, Inc. | Planarizing machines and methods for dispensing planarizing solutions in the processing of microelectronic workpieces |
US7708622B2 (en) | 2003-02-11 | 2010-05-04 | Micron Technology, Inc. | Apparatuses and methods for conditioning polishing pads used in polishing micro-device workpieces |
Also Published As
Publication number | Publication date |
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US20040198184A1 (en) | 2004-10-07 |
US20030143927A1 (en) | 2003-07-31 |
US7210989B2 (en) | 2007-05-01 |
US20040209548A1 (en) | 2004-10-21 |
US6722943B2 (en) | 2004-04-20 |
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