US20040126625A1 - High dielectric strength member - Google Patents
High dielectric strength member Download PDFInfo
- Publication number
- US20040126625A1 US20040126625A1 US10/737,785 US73778503A US2004126625A1 US 20040126625 A1 US20040126625 A1 US 20040126625A1 US 73778503 A US73778503 A US 73778503A US 2004126625 A1 US2004126625 A1 US 2004126625A1
- Authority
- US
- United States
- Prior art keywords
- dielectric strength
- sprayed
- spraying
- plasma
- high dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 10
- 238000007789 sealing Methods 0.000 claims abstract description 8
- 238000000576 coating method Methods 0.000 claims description 41
- 239000011248 coating agent Substances 0.000 claims description 34
- 238000005507 spraying Methods 0.000 abstract description 20
- 238000007750 plasma spraying Methods 0.000 abstract description 8
- 238000010438 heat treatment Methods 0.000 abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000002245 particle Substances 0.000 description 11
- 239000000843 powder Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 8
- 229910052736 halogen Inorganic materials 0.000 description 8
- 150000002367 halogens Chemical class 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000007789 gas Substances 0.000 description 6
- 230000005484 gravity Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005524 ceramic coating Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052593 corundum Inorganic materials 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000003851 corona treatment Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- -1 rare earth compounds Chemical class 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910000861 Mg alloy Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000010288 cold spraying Methods 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010283 detonation spraying Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 description 1
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- CMIHHWBVHJVIGI-UHFFFAOYSA-N gadolinium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Gd+3].[Gd+3] CMIHHWBVHJVIGI-UHFFFAOYSA-N 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910003443 lutetium oxide Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/12—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances ceramics
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H1/00—Details of emergency protective circuit arrangements
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C24/00—Coating starting from inorganic powder
- C23C24/02—Coating starting from inorganic powder by application of pressure only
- C23C24/04—Impact or kinetic deposition of particles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C4/00—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge
- C23C4/04—Coating by spraying the coating material in the molten state, e.g. by flame, plasma or electric discharge characterised by the coating material
- C23C4/10—Oxides, borides, carbides, nitrides or silicides; Mixtures thereof
- C23C4/11—Oxides
Definitions
- This invention relates to members having high dielectric strength spray coatings for use as sprayed members required to have a high dielectric strength, such as insulating coated members, spray coated heaters, semiconductor manufacturing susceptors and electrostatic chucks.
- Conventional insulating ceramic coated members relying on the thermal spraying process include dielectric rolls for corona discharge treatment, heating substrates and electrostatic chucks for semiconductor manufacturing apparatus.
- dielectric rolls for corona discharge treatment are required to have a dielectric strength of at least 5 kV when ceramic coatings have a thickness of at least 300 ⁇ m.
- ceramic coatings While currently available alumina sprayed coatings have a dielectric strength of approximately 10 kV/mm, ceramic coatings are made as thick as 500 ⁇ m to 3 mm in order to clear the requirement. Such thick ceramic coatings tend to craze or separate from supports. See JP-A 11-279302.
- alumina spray coated members are also used as heating substrates. They fail to maintain dielectric strength if the thickness of sprayed coating is less than 100 ⁇ m, and are prone to crack if the thickness of sprayed coating is more than 500 ⁇ m. Then sprayed coatings desirably have a thickness in the range of 100 to 500 ⁇ m. To enhance dielectric strength, pores in sprayed coatings must be sealed (see JP-A 2002-289329).
- Typical of ceramic sprayed members are alumina sprayed members. They are used as electrostatic chucks or the like. Because of their properties, however, alumina sprayed members need sealing treatment in order to provide a high dielectric strength. Organic materials are used in the sealing treatment. Such organic fills are susceptible to etching in a halogen plasma environment, becoming a cause of generating particles.
- Group IIIa compounds as the material having improved erosion resistance in a halogen plasma environment.
- yttrium-containing oxides and fluorides are known to be resistant to halogen plasma erosion.
- Members having such oxides and fluorides sprayed thereon are disclosed in JP-A 2001-164354 and JP-A 2001-226773.
- sprayed coatings of alumina and yttria are still insufficient in dielectric strength, and must be made thick or subjected to sealing treatment.
- An object of the invention is to provide a high dielectric strength member bearing a sprayed coating which has halogen plasma resistance and improved dielectric strength properties.
- the present invention provides a high dielectric strength member comprising a substrate and a high dielectric strength coating formed thereon in the form of a sprayed coating of an oxide containing a rare earth element having atomic number 64 to 71.
- the high dielectric strength member of the invention is arrived at by forming on a substrate a sprayed coating of an oxide containing a rare earth element having atomic number 64 to 71.
- the sprayed coating has a high dielectric strength without a need for sealing treatment.
- the substrate may be selected from among ceramics, metals and composites thereof depending on a particular application, though not critical.
- Exemplary ceramic materials include shaped bodies composed mainly of quartz, alumina, magnesia and yttria, and complex oxides thereof, shaped bodies composed mainly of silicon nitride, aluminum nitride and boron nitride, and shaped bodies composed mainly of silicon carbide and boron carbide.
- Exemplary carbon materials include carbon fibers and sintered carbon bodies.
- Exemplary metal materials include those based on iron, aluminum, magnesium, copper, silicon and nickel, alloys thereof, for example, stainless alloys, aluminum alloys, anodized aluminum alloys, magnesium alloys and copper alloys, and single crystal silicon. Also included in the composite category are metal materials covered with ceramic coatings and aluminum alloys subjected to anodizing treatment or surface treatment, typically plating.
- the sprayed coating contains an oxide of a rare earth element having atomic number 64 to 71, i.e., Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. It is most preferred that the sprayed coating consist solely of the rare earth oxide although the advantages of the invention are achievable with a sprayed coating containing at least 45% by weight, especially at least 50% by weight of the rare earth oxide.
- the oxides other than the rare earth oxide in the sprayed coating include Al 2 O 3 , Y 2 O 3 and oxides of other rare earth elements.
- Useful spraying techniques include flame spraying, high velocity oxy-fuel (HVOF) spraying, detonation spraying, plasma spraying, water stabilized plasma spraying, induction (RF) plasma spraying, electromagnetic acceleration plasma spraying, cold spraying, and laser spraying.
- the spraying technique is not particularly limited although the plasma spraying featuring a high spray output is preferred.
- the spraying is divided into atmospheric spraying and low pressure or vacuum spraying wherein spraying is effected in a chamber kept at a low pressure or vacuum. Internal pores may be reduced in order to form a more densified coating, and the low pressure spraying is recommended in this regard.
- the low pressure or vacuum spraying technique requires a low pressure or vacuum chamber in order to perform a spraying operation. This imposes spatial or time limits to the spraying operation. Then the present invention favors the atmospheric spraying technique which can be practiced without a need for a special pressure vessel.
- the plasma spraying system generally includes a plasma gun, a power supply, a powder feeder, and a gas controller.
- the plasma output is determined by the power supplied to the plasma gun and the feed rates of argon gas, nitrogen gas, hydrogen gas, helium gas or the like.
- the feed rate of powder is controlled by the powder feeder.
- a coating is formed by operating a plasma gun to create a plasma, feeding a powder into the plasma for melting particles, and instantaneously impinging molten particles against a substrate.
- spraying particles be melted fully and moved at a high flight velocity.
- the residence time of particles within the plasma should be longer, which is equivalent to a lower velocity as long as a limited space is concerned, and is thus contradictory to the high velocity requirement.
- Increasing the input to the gun leads to increases in both the temperature and flow velocity of a plasma jet.
- the melting of particles is determined by the latent heat of fusion, particle size, specific gravity of material and gas temperature, and the flight velocity is determined by the particle size, specific gravity and jet velocity. It is then believed that the input power must be optimized for each type of powder material.
- a material having a higher specific gravity as the coating. Namely, by forming a sprayed coating of an oxide having a higher specific gravity than alumina which has traditionally been used in dielectric strength sprayed members, a sprayed member having higher dielectric strength than the alumina-sprayed member is obtainable.
- compounds of elements of greater atomic numbers often have a higher specific gravity.
- rare earth compounds are known to have halogen plasma resistance. However, it is unknown that such rare earth compounds have high dielectric strength. The inventor has discovered that sprayed coatings of oxides of elements having atomic number 64 to 71 have high dielectric strength as well.
- the thickness of a sprayed coating is not critical, the preferred thickness is from 100 ⁇ m to less than 500 ⁇ m, more preferably from 100 ⁇ m to 450 ⁇ m, even more preferably from 100 ⁇ m to 400 ⁇ m. Too thin a coating may undergo breakdown due to the low dielectric strength at that thickness. Too thick a coating is liable to craze and separate from the substrate.
- the preferred dielectric strength is at least 15 kV/mm, more preferably at least 17 kV/mm as the lower limit and up to 50 kV/mm as the upper limit.
- the dielectric strength can be measured according to JIS C2110, for example, using a specimen in which oxide is plasma sprayed on a metal substrate.
- the sprayed coating on the specimen may have a thickness of about 100 to 500 ⁇ m.
- an aluminum substrate of 100 mm ⁇ 100 mm ⁇ 5 mm is used, one surface is blasted prior to spraying, and an oxide containing an element having atomic number 64 to 71 is plasma sprayed to form a sprayed coating of about 200 ⁇ m thick.
- the coated substrate is sandwiched between electrodes according to JIS C2110, and voltage is applied thereacross and increased at a rate of 200 V/sec. The voltage at which dielectric breakdown occurs is the breakdown voltage of the coating.
- the voltage which is lower by 0.5 kV than the breakdown voltage is a preset voltage. If no dielectric breakdown occurs when the voltage is increased at a rate of 200 V/sec up to the preset voltage and maintained at the preset voltage for 20 seconds, that voltage is the dielectric strength (kV) of the entire sprayed coating.
- the thus measured dielectric strength (kV) of the entire sprayed coating is normalized as a voltage per the sprayed coating thickness of 1 mm.
- the normalized value is the dielectric strength (kV/mm).
- Sprayed coatings of 200 ⁇ m thick were formed on aluminum substrates of 100 mm ⁇ 100 mm ⁇ 5 mm by spraying powders of oxides of atomic number 64 to 71 rare earth elements under spraying conditions: a plasma power of 35 kW, an argon gas flow rate of 40 l/min, a hydrogen gas flow rate of 5 l/min, and a powder feed rate of 20 g/min. Without sealing treatment, the sprayed coatings were subjected to a dielectric strength test.
- the dielectric strength test was performed according to JIS C2110. While the voltage was increased at a rate of 200 V/sec, the voltage at which dielectric breakdown occurred was first measured. The voltage which was lower by 0.5 kV than the breakdown voltage was then assumed to be a preset voltage. If no dielectric breakdown occurred when the voltage was increased at a rate of 200 V/sec up to the preset voltage and maintained at the preset voltage for 20 seconds, that voltage was the dielectric strength (kV) of the entire sprayed coating. The thus measured dielectric strength (kV) of the entire sprayed coating was divided by the thickness (200 ⁇ m) of the sprayed coating, obtaining a dielectric strength (kV/mm). The results are shown in Table 1.
- Example 2 As in Example 1, Y 2 O 3 powder having an average particle size of 35 ⁇ m was sprayed, and a dielectric strength test performed.
- Example 2 As in Example 1, Al 2 O 3 powder having an average particle size of 30 ⁇ m was sprayed, and a dielectric strength test performed.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Coating By Spraying Or Casting (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
A sprayed member is obtained by plasma spraying an oxide containing a rare earth element having atomic number 64 to 71 onto a substrate to form a spray coating. The sprayed member exhibits a high dielectric strength without a need for sealing treatment and is useful as dielectric rolls, heating substrates, electrostatic chucks, susceptors and the like.
Description
- 1. Field of the Invention
- This invention relates to members having high dielectric strength spray coatings for use as sprayed members required to have a high dielectric strength, such as insulating coated members, spray coated heaters, semiconductor manufacturing susceptors and electrostatic chucks.
- 2. Background Art
- Conventional insulating ceramic coated members relying on the thermal spraying process include dielectric rolls for corona discharge treatment, heating substrates and electrostatic chucks for semiconductor manufacturing apparatus.
- For example, dielectric rolls for corona discharge treatment are required to have a dielectric strength of at least 5 kV when ceramic coatings have a thickness of at least 300 μm. While currently available alumina sprayed coatings have a dielectric strength of approximately 10 kV/mm, ceramic coatings are made as thick as 500 μm to 3 mm in order to clear the requirement. Such thick ceramic coatings tend to craze or separate from supports. See JP-A 11-279302.
- Also used as heating substrates are alumina spray coated members. They fail to maintain dielectric strength if the thickness of sprayed coating is less than 100 μm, and are prone to crack if the thickness of sprayed coating is more than 500 μm. Then sprayed coatings desirably have a thickness in the range of 100 to 500 μm. To enhance dielectric strength, pores in sprayed coatings must be sealed (see JP-A 2002-289329).
- The processes of manufacturing semiconductor wafers and flat panel display substrates involve many substrate-processing steps like etching, deposition and exposure, for which electrostatic chucks, heaters, susceptors and the like are used in the processing chamber. In these steps, workpieces are often treated with a plasma of corrosive halide gas. Since those members serving as processing jigs in such an environment are attacked by corrosive species, use is typically made of ceramic material members and metal material members having ceramics sprayed thereon. Currently, ceramic sprayed members are often used because wafers become of a larger size and complex members combined with metal members such as heaters can be easily fabricated and because of a low cost.
- Typical of ceramic sprayed members are alumina sprayed members. They are used as electrostatic chucks or the like. Because of their properties, however, alumina sprayed members need sealing treatment in order to provide a high dielectric strength. Organic materials are used in the sealing treatment. Such organic fills are susceptible to etching in a halogen plasma environment, becoming a cause of generating particles.
- Since the recent halogen plasma process has a high selectivity and uses a high density plasma in order to form narrow and deep channels by etching, there arises a problem that even the alumina sprayed members are less resistant to the halogen plasma.
- Attention is now drawn to Group IIIa compounds as the material having improved erosion resistance in a halogen plasma environment. Of these compounds, yttrium-containing oxides and fluorides are known to be resistant to halogen plasma erosion. Members having such oxides and fluorides sprayed thereon are disclosed in JP-A 2001-164354 and JP-A 2001-226773. However, sprayed coatings of alumina and yttria are still insufficient in dielectric strength, and must be made thick or subjected to sealing treatment.
- An object of the invention is to provide a high dielectric strength member bearing a sprayed coating which has halogen plasma resistance and improved dielectric strength properties.
- It has been found that a member having a sprayed coating of an oxide of an atomic number 64 to 71 rare earth element formed on a substrate exhibits a high dielectric strength without a need for sealing treatment on the sprayed coating and possesses halogen plasma resistance.
- Accordingly, the present invention provides a high dielectric strength member comprising a substrate and a high dielectric strength coating formed thereon in the form of a sprayed coating of an oxide containing a rare earth element having atomic number 64 to 71.
- The high dielectric strength member of the invention is arrived at by forming on a substrate a sprayed coating of an oxide containing a rare earth element having atomic number 64 to 71. The sprayed coating has a high dielectric strength without a need for sealing treatment.
- The substrate may be selected from among ceramics, metals and composites thereof depending on a particular application, though not critical. Exemplary ceramic materials include shaped bodies composed mainly of quartz, alumina, magnesia and yttria, and complex oxides thereof, shaped bodies composed mainly of silicon nitride, aluminum nitride and boron nitride, and shaped bodies composed mainly of silicon carbide and boron carbide. Exemplary carbon materials include carbon fibers and sintered carbon bodies. Exemplary metal materials include those based on iron, aluminum, magnesium, copper, silicon and nickel, alloys thereof, for example, stainless alloys, aluminum alloys, anodized aluminum alloys, magnesium alloys and copper alloys, and single crystal silicon. Also included in the composite category are metal materials covered with ceramic coatings and aluminum alloys subjected to anodizing treatment or surface treatment, typically plating.
- The sprayed coating contains an oxide of a rare earth element having atomic number 64 to 71, i.e., Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu. It is most preferred that the sprayed coating consist solely of the rare earth oxide although the advantages of the invention are achievable with a sprayed coating containing at least 45% by weight, especially at least 50% by weight of the rare earth oxide. The oxides other than the rare earth oxide in the sprayed coating include Al2O3, Y2O3 and oxides of other rare earth elements.
- Useful spraying techniques include flame spraying, high velocity oxy-fuel (HVOF) spraying, detonation spraying, plasma spraying, water stabilized plasma spraying, induction (RF) plasma spraying, electromagnetic acceleration plasma spraying, cold spraying, and laser spraying. The spraying technique is not particularly limited although the plasma spraying featuring a high spray output is preferred.
- Depending on the operating atmosphere, the spraying is divided into atmospheric spraying and low pressure or vacuum spraying wherein spraying is effected in a chamber kept at a low pressure or vacuum. Internal pores may be reduced in order to form a more densified coating, and the low pressure spraying is recommended in this regard. However, the low pressure or vacuum spraying technique requires a low pressure or vacuum chamber in order to perform a spraying operation. This imposes spatial or time limits to the spraying operation. Then the present invention favors the atmospheric spraying technique which can be practiced without a need for a special pressure vessel.
- The plasma spraying system generally includes a plasma gun, a power supply, a powder feeder, and a gas controller. The plasma output is determined by the power supplied to the plasma gun and the feed rates of argon gas, nitrogen gas, hydrogen gas, helium gas or the like. The feed rate of powder is controlled by the powder feeder.
- In the plasma spraying technique, a coating is formed by operating a plasma gun to create a plasma, feeding a powder into the plasma for melting particles, and instantaneously impinging molten particles against a substrate. In order to obtain a satisfactory coating, it is requisite that spraying particles be melted fully and moved at a high flight velocity. In order that particles be melted, the residence time of particles within the plasma should be longer, which is equivalent to a lower velocity as long as a limited space is concerned, and is thus contradictory to the high velocity requirement. Increasing the input to the gun leads to increases in both the temperature and flow velocity of a plasma jet. However, the melting of particles is determined by the latent heat of fusion, particle size, specific gravity of material and gas temperature, and the flight velocity is determined by the particle size, specific gravity and jet velocity. It is then believed that the input power must be optimized for each type of powder material.
- For the manufacture of a sprayed member having higher dielectric strength, with the above-described spraying conditions taken into account, it is important to use a material having a higher specific gravity as the coating. Namely, by forming a sprayed coating of an oxide having a higher specific gravity than alumina which has traditionally been used in dielectric strength sprayed members, a sprayed member having higher dielectric strength than the alumina-sprayed member is obtainable. In general, compounds of elements of greater atomic numbers often have a higher specific gravity. Of these, rare earth compounds are known to have halogen plasma resistance. However, it is unknown that such rare earth compounds have high dielectric strength. The inventor has discovered that sprayed coatings of oxides of elements having atomic number 64 to 71 have high dielectric strength as well.
- Although the thickness of a sprayed coating is not critical, the preferred thickness is from 100 μm to less than 500 μm, more preferably from 100 μm to 450 μm, even more preferably from 100 μm to 400 μm. Too thin a coating may undergo breakdown due to the low dielectric strength at that thickness. Too thick a coating is liable to craze and separate from the substrate.
- No particular limits are imposed to the dielectric strength (kV/mm) of the sprayed coating. The preferred dielectric strength is at least 15 kV/mm, more preferably at least 17 kV/mm as the lower limit and up to 50 kV/mm as the upper limit.
- Herein, the dielectric strength can be measured according to JIS C2110, for example, using a specimen in which oxide is plasma sprayed on a metal substrate. The sprayed coating on the specimen may have a thickness of about 100 to 500 μm. Specifically, an aluminum substrate of 100 mm×100 mm×5 mm is used, one surface is blasted prior to spraying, and an oxide containing an element having atomic number 64 to 71 is plasma sprayed to form a sprayed coating of about 200 μm thick. The coated substrate is sandwiched between electrodes according to JIS C2110, and voltage is applied thereacross and increased at a rate of 200 V/sec. The voltage at which dielectric breakdown occurs is the breakdown voltage of the coating.
- The voltage which is lower by 0.5 kV than the breakdown voltage is a preset voltage. If no dielectric breakdown occurs when the voltage is increased at a rate of 200 V/sec up to the preset voltage and maintained at the preset voltage for 20 seconds, that voltage is the dielectric strength (kV) of the entire sprayed coating. The thus measured dielectric strength (kV) of the entire sprayed coating is normalized as a voltage per the sprayed coating thickness of 1 mm. The normalized value is the dielectric strength (kV/mm).
- Examples of the invention are given below by way of illustration and not by way of limitation.
- Sprayed coatings of 200 μm thick were formed on aluminum substrates of 100 mm×100 mm×5 mm by spraying powders of oxides of atomic number 64 to 71 rare earth elements under spraying conditions: a plasma power of 35 kW, an argon gas flow rate of 40 l/min, a hydrogen gas flow rate of 5 l/min, and a powder feed rate of 20 g/min. Without sealing treatment, the sprayed coatings were subjected to a dielectric strength test.
- The dielectric strength test was performed according to JIS C2110. While the voltage was increased at a rate of 200 V/sec, the voltage at which dielectric breakdown occurred was first measured. The voltage which was lower by 0.5 kV than the breakdown voltage was then assumed to be a preset voltage. If no dielectric breakdown occurred when the voltage was increased at a rate of 200 V/sec up to the preset voltage and maintained at the preset voltage for 20 seconds, that voltage was the dielectric strength (kV) of the entire sprayed coating. The thus measured dielectric strength (kV) of the entire sprayed coating was divided by the thickness (200 μm) of the sprayed coating, obtaining a dielectric strength (kV/mm). The results are shown in Table 1.
- As in Example 1, Y2O3 powder having an average particle size of 35 μm was sprayed, and a dielectric strength test performed.
- As in Example 1, Al2O3 powder having an average particle size of 30 μm was sprayed, and a dielectric strength test performed.
- The results are shown in Table 1.
TABLE 1 Dielectric Atomic Specific strength number Oxide gravity (kV/mm) Example 1 64 Gd2O3 7.62 19 Example 2 65 Tb2O3 7.81 22 Example 3 66 Dy2O3 7.41 26 Example 4 67 Ho2O3 8.36 19 Example 5 68 Er2O3 8.65 26 Example 6 70 Yb2O3 9.17 28 Example 7 71 Lu2O3 9.84 25 Comparative Example 1 39 Y2O3 5.03 12 Comparative Example 2 13 Al2O3 3.99 10 - There have been described spray coated members having a high dielectric strength. They are useful as dielectric rolls, heating substrates, electrostatic chucks and susceptors for semiconductor manufacturing apparatus and the like.
- Japanese Patent Application No. 2002-379389 is incorporated herein by reference.
- Reasonable modifications and variations are possible from the foregoing disclosure without departing from either the spirit or scope of the present invention as defined by the claims.
Claims (2)
1. A high dielectric strength member comprising a substrate and a high dielectric strength coating formed thereon in the form of a sprayed coating of an oxide containing a rare earth element having atomic number 64 to 71.
2. The high dielectric strength member of claim 1 wherein the sprayed coating has not been subjected to sealing treatment.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US11/052,229 US7280341B2 (en) | 2002-12-27 | 2005-02-08 | Electrostatic chuck |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-379389 | 2002-12-27 | ||
JP2002379389A JP3829935B2 (en) | 2002-12-27 | 2002-12-27 | High voltage resistance member |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
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US11/052,229 Continuation-In-Part US7280341B2 (en) | 2002-12-27 | 2005-02-08 | Electrostatic chuck |
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US20040126625A1 true US20040126625A1 (en) | 2004-07-01 |
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Family Applications (2)
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US10/737,785 Abandoned US20040126625A1 (en) | 2002-12-27 | 2003-12-18 | High dielectric strength member |
US11/052,229 Expired - Fee Related US7280341B2 (en) | 2002-12-27 | 2005-02-08 | Electrostatic chuck |
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US11/052,229 Expired - Fee Related US7280341B2 (en) | 2002-12-27 | 2005-02-08 | Electrostatic chuck |
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US (2) | US20040126625A1 (en) |
JP (1) | JP3829935B2 (en) |
KR (1) | KR101121364B1 (en) |
TW (1) | TW200428416A (en) |
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US6908784B1 (en) * | 2002-03-06 | 2005-06-21 | Micron Technology, Inc. | Method for fabricating encapsulated semiconductor components |
CN100370592C (en) * | 2005-12-08 | 2008-02-20 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Electrostatic chuck |
US20070139855A1 (en) * | 2005-12-21 | 2007-06-21 | Asml Netherlands B.V. | Lithographic apparatus and method of manufacturing an electrostatic clamp for a lithographic apparatus |
US20080106842A1 (en) * | 2006-11-06 | 2008-05-08 | Tokyo Electron Limited | Mounting device, plasma processing apparatus and plasma processing method |
JP5393271B2 (en) * | 2009-06-09 | 2014-01-22 | 信越化学工業株式会社 | Oxides and magneto-optical devices |
KR20140108307A (en) | 2011-12-28 | 2014-09-05 | 가부시키가이샤 후지미인코퍼레이티드 | Yttrium oxide coating film |
JP5888458B2 (en) | 2014-06-26 | 2016-03-22 | Toto株式会社 | Plasma-resistant member and manufacturing method thereof |
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- 2003-12-24 KR KR1020030095990A patent/KR101121364B1/en not_active Expired - Lifetime
- 2003-12-26 TW TW092137113A patent/TW200428416A/en not_active IP Right Cessation
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US20050168908A1 (en) | 2005-08-04 |
KR20040060757A (en) | 2004-07-06 |
JP2004211122A (en) | 2004-07-29 |
JP3829935B2 (en) | 2006-10-04 |
KR101121364B1 (en) | 2012-03-09 |
TW200428416A (en) | 2004-12-16 |
TWI295327B (en) | 2008-04-01 |
US7280341B2 (en) | 2007-10-09 |
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