US20030168170A1 - Wafer protection apparatus - Google Patents
Wafer protection apparatus Download PDFInfo
- Publication number
- US20030168170A1 US20030168170A1 US10/383,347 US38334703A US2003168170A1 US 20030168170 A1 US20030168170 A1 US 20030168170A1 US 38334703 A US38334703 A US 38334703A US 2003168170 A1 US2003168170 A1 US 2003168170A1
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- Prior art keywords
- base
- wafer
- protection apparatus
- sealing member
- wafer protection
- Prior art date
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- Abandoned
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- 238000007789 sealing Methods 0.000 claims abstract description 57
- 239000007788 liquid Substances 0.000 claims abstract description 17
- 238000005530 etching Methods 0.000 claims description 13
- 239000013013 elastic material Substances 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 68
- 239000000463 material Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000004630 atomic force microscopy Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- -1 flow gauges Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
Definitions
- the invention relates to a wafer protection apparatus; in particular, a wafer protection apparatus applied in a microelectromechanical process.
- Microelectromechanical systems are microdevices widely used as advanced sensors, microfluidic controls, or micromachines. Advanced MEMS sensors can be found in automobiles, medical instrumentation, or process control applications, and provide accurate determinations of pressure, temperature, acceleration, gas concentration, and many other physical or chemical states.
- Microfluidic controls include microvalves for handling gases or liquids, flow gauges, and ink jet nozzles, while micromachines include microactuators, movable micromirror systems, tactile moving assemblies, and such devices as atomic force microscopy cantilevers.
- microdevices are constructed from semiconductor material substrates such as crystalline silicon, widely available in the form of a semiconductor wafer used to produce integrated circuits.
- microdevices from a semiconductor wafer substrate can take advantage of the extensive experience in both surface and bulk etching techniques developed by the semiconductor processing industry for integrated circuit (IC) production.
- Surface etching used in IC production for defining thin surface patterns in a semiconductor wafer, can be modified to allow for sacrificial undercut etching of thin layers of semiconductor materials to create movable elements.
- Bulk etching typically used in IC production when deep trenches or vias must be formed in a wafer using anisotropic etch processes, can be used to precisely machine edges or trenches in microdevices.
- microdevice construction it is even possible to employ anisotropic wet processing techniques that rely on differential crystallographic orientations of materials, or the use of electrochemical etch stops, to define microdevice components.
- anisotropic wet processing techniques that rely on differential crystallographic orientations of materials, or the use of electrochemical etch stops, to define microdevice components.
- freedom in designing complex microdevices is greatly constrained when wet processing etch techniques are used.
- Wet processing is severely limited by dependence on semiconductor crystal orientation and the materials and etchants used.
- microdevices containing thin extending structures are often susceptible to damage as a result of hydrodynamic forces incurred during wet processing.
- FIG. 1 a shows a conventional wafer protection apparatus 10 .
- the wafer protection apparatus 10 comprises a base 11 , an O-ring 12 , and two bolts 13 .
- the base 11 holds a wafer 100 .
- the O-ring 12 is disposed in the base 11 so as to form a space 14 .
- the bolts 13 assemble the base 11 so that the base 11 is closely adjacent to the O-ring 12 .
- the etchant 200 can pass between the base 11 and the wafer 100 , and between the O-ring 12 and the wafer 100 due to capillarity along an arrow. Then, the etchant 200 can etch a passivation layer on the surface 120 of the wafer 100 . As a result, IC on the surface 120 is damaged by the etchant 200 .
- the surface 110 of the wafer 100 is formed with a barrier layer 111 and an etching layer 112 by deposition or coating before etching. Since an etching rate to the etchant 200 of the barrier layer 111 is different from that of the etching layer 112 , the surface 110 of the wafer 100 can be patterned.
- the invention provides a wafer protection apparatus that can enhance a manufactory yield in a MEMS process.
- the invention provides a wafer protection apparatus for holding a wafer in a liquid.
- the wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion.
- a reaction rate to the liquid of the second portion is faster than that of the first portion.
- the wafer protection apparatus comprises a first base, a second base, and a first sealing member.
- the first base holds the wafer in a manner such that the first base is in contact with the first surface of the wafer.
- the second base is connected with the first base.
- the first sealing member is disposed on the second base so as to abut the first portion of the second surface of the wafer.
- the wafer protection apparatus further comprises a second sealing member.
- the second sealing member is disposed between the first base and the second base so as to prevent the liquid from passing between the first base and the second base due to capillarity.
- the first sealing member may be of elastic material so as to closely abut the second base and the wafer respectively
- the second sealing member may be of elastic material so as to closely abut the first base and the second base respectively.
- first sealing member and the second sealing member may be O-rings.
- the second base includes a groove for the first sealing member to be disposed therein in a close fit manner.
- the first base includes a step portion in a manner such that the first surface of the wafer faces the step portion to form a space therebetween.
- the wafer protection apparatus further comprises a fixed member.
- the fixed member connects the first base and the second base so that the second base is closely adjacent to the first sealing member.
- the fixed member may be a bolt.
- FIG. 1 a is a schematic view of a conventional wafer protection apparatus
- FIG. 1 b is a schematic view that shows the wafer protection apparatus in FIG. 1 a placed in an etchant
- FIG. 1 c is a partial enlarged view in FIG. 1 b;
- FIG. 2 is a schematic view of a wafer surface to be etched
- FIG. 3 a is a schematic view of a first embodiment of a wafer protection apparatus as disclosed in this invention.
- FIG. 3 b is a schematic view of a second base in FIG. 3 a;
- FIG. 3 c is a cross section along a line c-c in FIG. 3 b;
- FIG. 4 is a schematic view that shows the wafer protection apparatus in FIG. 3 a placed in an etchant
- FIG. 5 a is a schematic view of a second embodiment of a wafer protection apparatus as disclosed in this invention.
- FIG. 5 b is a schematic view that shows the wafer protection apparatus in FIG. 5 a placed in an etchant.
- a wafer protection apparatus as disclosed in this invention holds a wafer in a liquid.
- the wafer protection apparatus can completely prevent a specific area of the wafer from contacting the liquid.
- the liquid may be an etchant, electroplating liquid, or others.
- the etchant represents the liquid.
- the wafer 100 includes a first surface 120 and a second surface 110 opposite the first surface 120 .
- the first surface 120 is protected so as not to react with the etchant 200 .
- the second surface 110 reacts with the etchant 200 , and includes a first portion 111 and a second portion 112 .
- the first portion 111 is a barrier layer, and the second portion 112 is an etching layer.
- a reaction rate to the etchant 200 of the first portion 111 is slower than that of the second portion 112 .
- a wafer protection apparatus 20 as disclosed in a first embodiment of this invention, comprises a first base 21 , a second base 22 , a sealing member 23 , and two fixed members 24 .
- the first base 21 is used as a main portion of the wafer protection apparatus 20 , and holds the wafer 100 in a manner such that the first base 21 is in contact with the first surface 120 of the wafer 100 .
- the first base 21 includes a step portion 211 in a manner such that the first surface 120 of the wafer 100 faces the step portion 211 to form is a space 25 therebetween.
- the second base 22 is connected with the first base 21 by the fixed members 24 . As shown in FIG. 3 b and FIG. 3 c , the second base 22 includes a groove 221 for the sealing member 23 to be disposed therein in a close fit manner.
- the sealing member 23 is disposed in the groove 221 of the second base 22 in a close fit manner.
- the sealing member 23 maybe of elastic material, such as an O-ring.
- the sealing member 23 is closely adjacent to the first portion 111 of the second surface 110 of the wafer 100 .
- the sealing member 23 can closely abut the second base 22 and the wafer 100 respectively.
- the fixed members 24 connect the first base 21 and the second base 22 so that the second base 22 is closely adjacent to the sealing member 23 . It is understood that the fixed members 24 may be bolts, respectively.
- FIG. 4 shows the wafer protection apparatus 20 placed in the etchant 200 . Since the sealing member 23 is closely adjacent to the first portion 111 of the wafer 100 , only minute amounts of the etchant 200 can flow to a location between the wafer 100 and the sealing member 23 due to capillarity. Also, since the etching rate to the etchant 200 of the first portion 111 is extremely slow, the etchant 200 cannot flow to the first surface 120 , located in the space 25 , along an edge of the wafer 100 . Thus, during the etching process, the etchant 200 is restrained from reacting with the second surface 110 , and the first surface 120 . As a result, the wafer protection apparatus 20 can protect the wafer 100 properly.
- each element of the wafer protection apparatus 20 is of a material that does not change its characteristics after contacting the etchant 200 . Specifically, when the wafer protection apparatus 20 is placed in the etchant 200 , the sealing member 23 is still closely adjacent to the second base 22 and the wafer 100 , and the fixed members 24 still combine the first base 21 and the second base 22 .
- a wafer protection apparatus 30 as disclosed in a second embodiment of this invention, comprises a first base 31 , a second base 32 , a first sealing member 33 , two fixed members 34 , and a second sealing member 36 .
- the difference between the first embodiment and the second embodiment is that the second sealing member 36 is added in this embodiment. Since the first base 31 , the second base 32 , the first sealing member 33 , and the fixed members 34 of the second embodiment are the same as those of the first embodiment, their description is omitted.
- the second sealing member 36 is disposed between the first base 31 and the second base 32 , and may be of elastic material, such as an O-ring. Thus, the second sealing member 36 is closely adjacent to the first base 31 and the second base 32 respectively. As a result, the second sealing member 36 can prevent the etchant 200 from passing between the first base 31 and the second base 32 due to capillarity.
- the wafer protection apparatus 30 includes the second sealing member 36 , it can protect the wafer more effectively.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
Abstract
A wafer protection apparatus for holding a wafer in a liquid. The wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion. A reaction rate to the liquid of the second portion is faster than that of the first portion. The wafer protection apparatus comprises a first base, a second base, and a first sealing member. The first base holds the wafer in a manner such that the first base is in contact with the first surface of the wafer. The second base is connected with the first base. The first sealing member is disposed on the second base so as to abut the first portion of the second surface of the wafer.
Description
- 1. Field of the Invention
- The invention relates to a wafer protection apparatus; in particular, a wafer protection apparatus applied in a microelectromechanical process.
- 2. Description of the Related Art
- Microelectromechanical systems (MEMS) are microdevices widely used as advanced sensors, microfluidic controls, or micromachines. Advanced MEMS sensors can be found in automobiles, medical instrumentation, or process control applications, and provide accurate determinations of pressure, temperature, acceleration, gas concentration, and many other physical or chemical states. Microfluidic controls include microvalves for handling gases or liquids, flow gauges, and ink jet nozzles, while micromachines include microactuators, movable micromirror systems, tactile moving assemblies, and such devices as atomic force microscopy cantilevers. Commonly, microdevices are constructed from semiconductor material substrates such as crystalline silicon, widely available in the form of a semiconductor wafer used to produce integrated circuits.
- Because of the commonality of material, fabrication of microdevices from a semiconductor wafer substrate can take advantage of the extensive experience in both surface and bulk etching techniques developed by the semiconductor processing industry for integrated circuit (IC) production. Surface etching, used in IC production for defining thin surface patterns in a semiconductor wafer, can be modified to allow for sacrificial undercut etching of thin layers of semiconductor materials to create movable elements. Bulk etching, typically used in IC production when deep trenches or vias must be formed in a wafer using anisotropic etch processes, can be used to precisely machine edges or trenches in microdevices. Both surface and bulk etching of wafers can proceed with “wet processing”, using chemicals such as potassium hydroxide in solution to remove non-masked material from a wafer. For microdevice construction, it is even possible to employ anisotropic wet processing techniques that rely on differential crystallographic orientations of materials, or the use of electrochemical etch stops, to define microdevice components. Unfortunately, freedom in designing complex microdevices is greatly constrained when wet processing etch techniques are used. Wet processing is severely limited by dependence on semiconductor crystal orientation and the materials and etchants used. Even worse, microdevices containing thin extending structures are often susceptible to damage as a result of hydrodynamic forces incurred during wet processing.
- Thus, during wet processing, a wafer protection apparatus is provided to protect a specific area of the wafer. FIG. 1a shows a conventional
wafer protection apparatus 10. Thewafer protection apparatus 10 comprises abase 11, an O-ring 12, and twobolts 13. Thebase 11 holds awafer 100. The O-ring 12 is disposed in thebase 11 so as to form aspace 14. Thebolts 13 assemble thebase 11 so that thebase 11 is closely adjacent to the O-ring 12. - Referring to FIG. 1b, when the
wafer protection apparatus 10, holding thewafer 100, is placed in an etchant 200, asurface 110 to be etched of thewafer 100 is in contact with the etchant 200, and asurface 120 not to be etched of thewafer 100 is protected by thespace 14. - However, since the position of the O-
ring 12 in the conventionalwafer protection apparatus 10 is not proper, thesurface 120 of thewafer 100 cannot be protected completely. Specifically, as shown in FIG. 1c, the etchant 200 can pass between thebase 11 and thewafer 100, and between the O-ring 12 and thewafer 100 due to capillarity along an arrow. Then, the etchant 200 can etch a passivation layer on thesurface 120 of thewafer 100. As a result, IC on thesurface 120 is damaged by the etchant 200. - It is noted that the
surface 110 of thewafer 100 is formed with abarrier layer 111 and anetching layer 112 by deposition or coating before etching. Since an etching rate to the etchant 200 of thebarrier layer 111 is different from that of theetching layer 112, thesurface 110 of thewafer 100 can be patterned. - In order to address the disadvantages of the aforementioned wafer protection apparatus, the invention provides a wafer protection apparatus that can enhance a manufactory yield in a MEMS process.
- Accordingly, the invention provides a wafer protection apparatus for holding a wafer in a liquid. The wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion. A reaction rate to the liquid of the second portion is faster than that of the first portion. The wafer protection apparatus comprises a first base, a second base, and a first sealing member. The first base holds the wafer in a manner such that the first base is in contact with the first surface of the wafer. The second base is connected with the first base. The first sealing member is disposed on the second base so as to abut the first portion of the second surface of the wafer.
- In a preferred embodiment, the wafer protection apparatus further comprises a second sealing member. The second sealing member is disposed between the first base and the second base so as to prevent the liquid from passing between the first base and the second base due to capillarity.
- In another preferred embodiment, the first sealing member may be of elastic material so as to closely abut the second base and the wafer respectively, and the second sealing member may be of elastic material so as to closely abut the first base and the second base respectively.
- It is understood that the first sealing member and the second sealing member may be O-rings.
- In another preferred embodiment, the second base includes a groove for the first sealing member to be disposed therein in a close fit manner.
- In another preferred embodiment, the first base includes a step portion in a manner such that the first surface of the wafer faces the step portion to form a space therebetween.
- In another preferred embodiment, the wafer protection apparatus further comprises a fixed member. The fixed member connects the first base and the second base so that the second base is closely adjacent to the first sealing member.
- It is understood that the fixed member may be a bolt.
- The invention is hereinafter described in detail with reference to the accompanying drawings in which:
- FIG. 1a is a schematic view of a conventional wafer protection apparatus;
- FIG. 1b is a schematic view that shows the wafer protection apparatus in FIG. 1a placed in an etchant;
- FIG. 1c is a partial enlarged view in FIG. 1b;
- FIG. 2 is a schematic view of a wafer surface to be etched;
- FIG. 3a is a schematic view of a first embodiment of a wafer protection apparatus as disclosed in this invention;
- FIG. 3b is a schematic view of a second base in FIG. 3a;
- FIG. 3c is a cross section along a line c-c in FIG. 3b;
- FIG. 4 is a schematic view that shows the wafer protection apparatus in FIG. 3a placed in an etchant;
- FIG. 5a is a schematic view of a second embodiment of a wafer protection apparatus as disclosed in this invention; and
- FIG. 5b is a schematic view that shows the wafer protection apparatus in FIG. 5a placed in an etchant.
- A wafer protection apparatus as disclosed in this invention holds a wafer in a liquid. The wafer protection apparatus can completely prevent a specific area of the wafer from contacting the liquid. The liquid may be an etchant, electroplating liquid, or others. In following embodiments, the etchant represents the liquid. Referring to FIG. 2, the
wafer 100 includes afirst surface 120 and asecond surface 110 opposite thefirst surface 120. Thefirst surface 120 is protected so as not to react with theetchant 200. Thesecond surface 110 reacts with theetchant 200, and includes afirst portion 111 and asecond portion 112. Thefirst portion 111 is a barrier layer, and thesecond portion 112 is an etching layer. A reaction rate to theetchant 200 of thefirst portion 111 is slower than that of thesecond portion 112. - First Embodiment
- Referring to FIG. 3a, a
wafer protection apparatus 20, as disclosed in a first embodiment of this invention, comprises afirst base 21, asecond base 22, a sealingmember 23, and two fixedmembers 24. - As shown in FIG. 3a, the
first base 21 is used as a main portion of thewafer protection apparatus 20, and holds thewafer 100 in a manner such that thefirst base 21 is in contact with thefirst surface 120 of thewafer 100. Thefirst base 21 includes astep portion 211 in a manner such that thefirst surface 120 of thewafer 100 faces thestep portion 211 to form is aspace 25 therebetween. - The
second base 22 is connected with thefirst base 21 by the fixedmembers 24. As shown in FIG. 3b and FIG. 3c, thesecond base 22 includes agroove 221 for the sealingmember 23 to be disposed therein in a close fit manner. - The sealing
member 23 is disposed in thegroove 221 of thesecond base 22 in a close fit manner. The sealingmember 23 maybe of elastic material, such as an O-ring. Thus, the sealingmember 23 is closely adjacent to thefirst portion 111 of thesecond surface 110 of thewafer 100. As a result, the sealingmember 23 can closely abut thesecond base 22 and thewafer 100 respectively. - The fixed
members 24 connect thefirst base 21 and thesecond base 22 so that thesecond base 22 is closely adjacent to the sealingmember 23. It is understood that the fixedmembers 24 may be bolts, respectively. - FIG. 4 shows the
wafer protection apparatus 20 placed in theetchant 200. Since the sealingmember 23 is closely adjacent to thefirst portion 111 of thewafer 100, only minute amounts of theetchant 200 can flow to a location between thewafer 100 and the sealingmember 23 due to capillarity. Also, since the etching rate to theetchant 200 of thefirst portion 111 is extremely slow, theetchant 200 cannot flow to thefirst surface 120, located in thespace 25, along an edge of thewafer 100. Thus, during the etching process, theetchant 200 is restrained from reacting with thesecond surface 110, and thefirst surface 120. As a result, thewafer protection apparatus 20 can protect thewafer 100 properly. - It is noted that each element of the
wafer protection apparatus 20 is of a material that does not change its characteristics after contacting theetchant 200. Specifically, when thewafer protection apparatus 20 is placed in theetchant 200, the sealingmember 23 is still closely adjacent to thesecond base 22 and thewafer 100, and the fixedmembers 24 still combine thefirst base 21 and thesecond base 22. - Second Embodiment
- Referring to FIG. 5a and FIG. 5b, a
wafer protection apparatus 30, as disclosed in a second embodiment of this invention, comprises afirst base 31, asecond base 32, a first sealingmember 33, two fixedmembers 34, and asecond sealing member 36. The difference between the first embodiment and the second embodiment is that the second sealingmember 36 is added in this embodiment. Since thefirst base 31, thesecond base 32, the first sealingmember 33, and the fixedmembers 34 of the second embodiment are the same as those of the first embodiment, their description is omitted. - The
second sealing member 36 is disposed between thefirst base 31 and thesecond base 32, and may be of elastic material, such as an O-ring. Thus, the second sealingmember 36 is closely adjacent to thefirst base 31 and thesecond base 32 respectively. As a result, the second sealingmember 36 can prevent theetchant 200 from passing between thefirst base 31 and thesecond base 32 due to capillarity. - Since the
wafer protection apparatus 30 includes the second sealingmember 36, it can protect the wafer more effectively. - While the invention has been particularly shown and described with reference to preferred embodiments, it will be readily appreciated by those of ordinary skill in the art that various changes and modifications may be made without departing from the spirit and scope of the invention. It is intended that the claims be interpreted to cover the disclosed embodiments, those alternatives which have been discussed above, and all equivalents thereto.
Claims (33)
1. A wafer protection apparatus for holding a wafer in a liquid, wherein the wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion, a reaction rate to the liquid of which is faster than that of the first portion, and the wafer protection apparatus comprises:
a first base holding the wafer in a manner such that the first base is in contact with the first surface of the wafer;
a second base connected with the first base; and
a first sealing member disposed on the second base so as to abut the first portion of the second surface of the wafer.
2. The wafer protection apparatus as claimed in claim 1 , further comprising:
a second sealing member disposed between the first base and the second base so as to prevent the liquid from passing between the first base and the second base due to capillarity.
3. The wafer protection apparatus as claimed in claim 2 , wherein the second sealing member is of elastic material so as to closely abut the first base and the second base respectively.
4. The wafer protection apparatus as claimed in claim 3 , wherein the second sealing member is an O-ring.
5. The wafer protection apparatus as claimed in claim 1 , wherein the first sealing member is of elastic material so as to closely abut the second base and the wafer respectively.
6. The wafer protection apparatus as claimed in claim 5 , wherein the first sealing member is an O-ring.
7. The wafer protection apparatus as claimed in claim 1 , wherein the second base includes a groove for the first sealing member to be disposed therein.
8. The wafer protection apparatus as claimed in claim 7 , wherein the first sealing member is disposed in the groove in a close fit manner.
9. The wafer protection apparatus as claimed in claim 1 , wherein the first base includes a step portion in a manner such that the first surface of the wafer faces the step portion to form a space therebetween.
10. The wafer protection apparatus as claimed in claim 1 , further comprising:
a fixed member connecting the first base and the second base so that the second base is closely adjacent to the first sealing member.
11. The wafer protection apparatus as claimed in claim 10 , wherein the fixed member is a bolt.
12. A wafer protection apparatus for holding a wafer in an etchant, wherein the wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion, an etching rate to the etchant of which is faster than that of the first portion, and the wafer protection apparatus comprises:
a first base holding the wafer in a manner such that the first base is in contact with the first surface of the wafer;
a second base connected with the first base; and
a first sealing member disposed on the second base so as to abut the first portion of the second surface of the wafer.
13. The wafer protection apparatus as claimed in claim 12 , further comprising:
a second sealing member disposed between the first base and the second base so as to prevent the etchant from passing between the first base and the second base due to capillarity.
14. The wafer protection apparatus as claimed in claim 13 , wherein the second sealing member is of elastic material so as to closely abut the first base and the second base respectively.
15. The wafer protection apparatus as claimed in claim 14 , wherein the second sealing member is an O-ring.
16. The wafer protection apparatus as claimed in claim 12 , wherein the first sealing member is of elastic material so as to closely abut the second base and the wafer respectively.
17. The wafer protection apparatus as claimed in claim 16 , wherein the first sealing member is an O-ring.
18. The wafer protection apparatus as claimed in claim 12 , wherein the second base includes a groove for the first sealing member to be disposed therein.
19. The wafer protection apparatus as claimed in claim 18, wherein the first sealing member is disposed in the groove in a close fit manner.
20. The wafer protection apparatus as claimed in claim 12 , wherein the first base includes a step portion in a manner such that the first surface of the wafer faces the step portion to form a space therebetween.
21. The wafer protection apparatus as claimed in claim 12 , further comprising:
a fixed member connecting the first base and the second base so that the second base is closely adjacent to the first sealing member.
22. The wafer protection apparatus as claimed in claim 21 , wherein the fixed member is a bolt.
23. A wafer protection apparatus for holding a wafer in an electroplating liquid, wherein the wafer includes a first surface and a second surface opposite the first surface, and the second surface includes a first portion and a second portion, a reaction rate to the electroplating liquid of which is faster than that of the first portion, and the wafer protection apparatus comprises:
a first base holding the wafer in a manner such that the first base is in contact with the first surface of the wafer;
a second base connected with the first base; and
a first sealing member disposed on the second base so as to abut the first portion of the second surface of the wafer.
24. The wafer protection apparatus as claimed in claim 23 , further comprising:
a second sealing member disposed between the first base and the second base so as to prevent the electroplating liquid from passing between the first base and the second base due to capillarity.
25. The wafer protection apparatus as claimed in claim 24 , wherein the second sealing member is of elastic material so as to closely abut the first base and the second base respectively.
26. The wafer protection apparatus as claimed in claim 25 , wherein the second sealing member is an O-ring.
27. The wafer protection apparatus as claimed in claim 23 , wherein the first sealing member is of elastic material so as to closely abut the second base and the wafer respectively.
28. The wafer protection apparatus as claimed in claim 27 , wherein the first sealing member is an O-ring.
29. The wafer protection apparatus as claimed in claim 23 , wherein the second base includes a groove for the first sealing member to be disposed therein.
30. The wafer protection apparatus as claimed in claim 29 , wherein the first sealing member is disposed in the groove in a close fit manner.
31. The wafer protection apparatus as claimed in claim 23 , wherein the first base includes a step portion in a manner such that the first surface of the wafer faces the step portion to form a space therebetween.
32. The wafer protection apparatus as claimed in claim 23 , further comprising:
a fixed member connecting the first base and the second base so that the second base is closely adjacent to the first sealing member.
33. The wafer protection apparatus as claimed in claim 32 , wherein the fixed member is a bolt.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW091104241A TW527678B (en) | 2002-03-07 | 2002-03-07 | Wafer protection device |
TW91104241 | 2002-03-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
US20030168170A1 true US20030168170A1 (en) | 2003-09-11 |
Family
ID=27787112
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/383,347 Abandoned US20030168170A1 (en) | 2002-03-07 | 2003-03-06 | Wafer protection apparatus |
Country Status (3)
Country | Link |
---|---|
US (1) | US20030168170A1 (en) |
DE (1) | DE10310192A1 (en) |
TW (1) | TW527678B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180053667A1 (en) * | 2013-03-11 | 2018-02-22 | Applied Materials, Inc. | High Temperature Process Chamber Lid |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324410A (en) * | 1990-08-02 | 1994-06-28 | Robert Bosch Gmbh | Device for one-sided etching of a semiconductor wafer |
US5874365A (en) * | 1993-11-04 | 1999-02-23 | Nippondenso Co., Ltd. | Semiconductor wafer etching method |
US6039858A (en) * | 1998-07-22 | 2000-03-21 | International Business Machines Corporation | Plating process for x-ray mask fabrication |
US6171437B1 (en) * | 1997-11-20 | 2001-01-09 | Seiko Instruments Inc. | Semiconductor manufacturing device |
-
2002
- 2002-03-07 TW TW091104241A patent/TW527678B/en not_active IP Right Cessation
-
2003
- 2003-03-06 DE DE10310192A patent/DE10310192A1/en not_active Ceased
- 2003-03-06 US US10/383,347 patent/US20030168170A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5324410A (en) * | 1990-08-02 | 1994-06-28 | Robert Bosch Gmbh | Device for one-sided etching of a semiconductor wafer |
US5874365A (en) * | 1993-11-04 | 1999-02-23 | Nippondenso Co., Ltd. | Semiconductor wafer etching method |
US6171437B1 (en) * | 1997-11-20 | 2001-01-09 | Seiko Instruments Inc. | Semiconductor manufacturing device |
US6039858A (en) * | 1998-07-22 | 2000-03-21 | International Business Machines Corporation | Plating process for x-ray mask fabrication |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20180053667A1 (en) * | 2013-03-11 | 2018-02-22 | Applied Materials, Inc. | High Temperature Process Chamber Lid |
US10879090B2 (en) * | 2013-03-11 | 2020-12-29 | Applied Materials, Inc. | High temperature process chamber lid |
Also Published As
Publication number | Publication date |
---|---|
TW527678B (en) | 2003-04-11 |
DE10310192A1 (en) | 2003-10-02 |
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