US20030106567A1

US20030106567A1 - Semiconductor substrate cleaning apparatus, method of cleaning semiconductor substrate and method of manufacturing semiconductor device

Info

Publication number: US20030106567A1
Application number: US10/163,453
Authority: US
Inventors: Kazutoshi Anabuki; Hiroshi Tanaka; Naoki Yokoi; Masahiko Higashi
Original assignee: Mitsubishi Electric Corp
Current assignee: Renesas Technology Corp
Priority date: 2001-12-07
Filing date: 2002-06-07
Publication date: 2003-06-12
Also published as: JP2003173999A

Abstract

A semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device are obtained, in which reduction of production yield of a semiconductor device can be prevented. The semiconductor substrate cleaning apparatus includes a holding member holding a semiconductor substrate and a cleaning member allowing a cleaning medium to be supplied only to a part of a surface of the semiconductor substrate while the semiconductor substrate held by the holding member is fixed. In such a manner, the cleaning medium is supplied to the semiconductor substrate while the semiconductor substrate is not rotated but fixed, whereby only a part of the surface of the semiconductor substrate can be cleaned.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device. More particularly, the present invention relates to a semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate, in which only a particular position of the semiconductor substrate can be cleaned, and a method of manufacturing a semiconductor device.

2. Description of the Background Art

Conventionally, a prescribed semiconductor device is formed by performing film deposition, etching and the like on the surface of a semiconductor substrate in a manufacturing process of a semiconductor device. Furthermore, before and after the steps of film deposition and etching, a cleaning step is performed for removing particles from the surface of the semiconductor substrate.

An example of a cleaning method conventionally utilized in the cleaning step includes a method shown in FIG. 10. FIG. 10 is a schematic view illustrating one example of a conventional method of cleaning a semiconductor substrate. As shown in FIG. 10, in the conventional method of cleaning a semiconductor substrate, a

semiconductor substrate

101 is fixed on a base 102, and then base 102 and semiconductor substrate 101 are rotated as represented by an arrow 130. Then, while semiconductor substrate 101 is rotated, cleaning liquid 105 is supplied from chemicals nozzle 103 onto the surface of semiconductor substrate 101. At this point, by supplying cleaning liquid 105 to approximately the center portion of semiconductor substrate 101, cleaning liquid 105 is flown from the center portion toward the outer periphery portion on the surface of the semiconductor substrate, because the semiconductor substrate 101 is rotated. As a result, the entire surface of semiconductor substrate 101 can be cleaned almost uniformly.

Furthermore, another example of a cleaning method conventionally utilized in the cleaning step includes a method as shown in FIG. 11. FIG. 11 is a schematic view illustrating another example of a conventional method of cleaning a semiconductor substrate. As shown in FIG. 11, in another example of a conventional method of cleaning a semiconductor substrate, a chemicals tank containing

cleaning liquid

105 is provided. Then, semiconductor substrate 101 is dipped in cleaning liquid 105 held in this chemicals tank 118, as represented by an arrow 131. In this way also, the entire surface of semiconductor substrate 101 can be cleaned almost uniformly.

Now, an identification label for individually identifying

semiconductor substrate

101 is formed on the surface of semiconductor substrate 101 in a manufacturing process of a semiconductor device. A laser-printed portion 106 is formed as this identification label by printing the substrate with a prescribed character or sign using a laser beam as shown, for example, in FIG. 11. More specifically, the surface layer of semiconductor substrate 101 is irradiated with a laser beam and thus partially removed to form a groove. The irradiation energy or irradiation position of the laser beam is controlled such that the planar shape of this groove has a prescribed character or sign. As a result, a prescribed character or sign can be formed in laser-printed portion 106. It is noted that such laser-printed portion 106 is formed at a position different from a chip-formed region 119 that will be a semiconductor device. For example, it is formed at the end portion of semiconductor substrate 101.

A character or sign formed in laser-printed

portion

106 needs to be recognized even after CMP (Chemical Mechanical Polishing) is performed to planarize a surface of an interlayer insulating film or the like in the subsequent process. Therefore, a groove that represents a character or the like formed in laser-printed portion 106, is formed to have a depth sufficient to be recognized even after the CMP described above is performed.

In forming such laser-printed

portion

106, particles resulting from the laser print step remain on the surface of semiconductor substrate 101 or within the groove formed at the time of the laser print step. In order to remove such particles from the surface of semiconductor substrate 101, the cleaning step as described above has conventionally been carried out.

Particles, however, often remain within the groove even after the cleaning step, because the groove representing the character or the like of laser-printed

portion

106 is formed relatively deep as described above. When particles remain in the groove in such a manner, the particles remaining within the groove adheres on chip-formed portion 119 or the like on the surface of semiconductor substrate 101, in a subsequent hydrofluoric acid treatment step. The presence of such particles may cause a short circuit of interconnection or a structural defect in the semiconductor device formed on the surface of semiconductor substrate 101. Therefore, it may possibly reduce production yield of the finished semiconductor device.

On the other hand, cleaning liquid or a cleaning technique with a high cleaning capability may be used to completely remove the particles from the inside of the groove after forming the laser-printed portion. In the conventional cleaning method, however, the entire surface of

semiconductor substrate

101 is cleaned. Therefore, when a cleaning method with a high cleaning capability is used, the cleaning step may cause a damage in the structure of chip-formed region 119. Accordingly, it has been difficult to use a cleaning method with such a high cleaning capability that can completely remove the particles within the groove.

As described above, it has been conventionally difficult to prevent reduction in production yield of the semiconductor device, which results from the particles remaining in the groove of laser-printed

portion

106.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a semiconductor substrate cleaning apparatus, a method of cleaning a semiconductor substrate and a method of manufacturing a semiconductor device, in which reduction in production yield of the semiconductor device can be prevented.

A semiconductor substrate cleaning apparatus in accordance with a one aspect of the present invention includes a holding member holding a semiconductor substrate and a cleaning member allowing a cleaning medium to be supplied only to a part of the surface of the semiconductor substrate while the semiconductor substrate held by the holding member is fixed.

Accordingly, the cleaning medium is supplied to the semiconductor substrate with the semiconductor substrate fixed without rotation, so that only a part of the surface of the semiconductor substrate can be cleaned. Therefore, when particles are present in a groove that represents a character or the like formed in a laser-printed portion, only this laser-printed portion can be cleaned. Furthermore, by using chemicals with a high cleaning capability as a cleaning medium, the particles existing within the groove can be removed.

In addition, since the cleaning medium is supplied only to a part of the surface of the semiconductor substrate (a laser-printed portion), the possibility that the region other than the above part of the surface of the semiconductor substrate (for example, a chip-formed region) is damaged by the cleaning medium, can be reduced. In other words, only a part of the surface of the semiconductor substrate, such as a laser-printed portion can surely be cleaned without damaging the chip-formed region of the semiconductor substrate. This can prevent the particles from remaining in the groove positioned on a part of the surface of the semiconductor substrate (for example a laser-printed potion). Therefore, in a semiconductor device formed on the surface of the semiconductor substrate, a defect resulting from the cleaning step can be prevented and the possibility of a defect resulting from the particles can be reduced. As a result, reduction of production yield of the semiconductor device can be prevented.

In the semiconductor substrate cleaning apparatus in accordance with the one aspect above, the cleaning member may include at least one selected from the group consisting of a member supplying an ultrasonically vibrated cleaning medium and a member supplying a pressurized cleaning medium, to the part of the surface of the semiconductor substrate.

In this case, the cleaning capability in cleaning the part of the surface of the semiconductor substrate can be improved. Therefore, the possibility that the particles remain in the above part can effectively be reduced.

In the semiconductor substrate cleaning apparatus in accordance with the one aspect above, the cleaning member may include a nozzle for supplying the cleaning medium to the surface of the semiconductor substrate, and a position determining member determining a relative position of the nozzle to the surface of the semiconductor substrate based on coordinate data of that part on the surface of the semiconductor substrate which is supplied with the cleaning medium.

In this case, a position of the nozzle relative to the part to be cleaned can accurately be determined. Therefore, the cleaning medium can be supplied only to a part of the surface of the semiconductor substrate at high accuracy. Accordingly, only a part of the surface of the semiconductor substrate can surely be cleaned.

In the semiconductor substrate cleaning apparatus in accordance with the one aspect above, the rinsing member may include a member supplying a rinsing medium to the surface of the semiconductor substrate. The cleaning member may supply the cleaning medium only to a part of the surface of the semiconductor substrate while the rinsing medium is supplied to the surface of the semiconductor substrate.

In this case, even if the cleaning medium scatters over the region other than the part of the surface of the semiconductor substrate, the cleaning medium is immediately washed away by the rinsing medium. Therefore, the possibility of a damage caused by the cleaning medium in the region other than the part of the surface of the semiconductor substrate can be reduced.

A method of cleaning a semiconductor substrate in accordance with another aspect of the present invention includes the steps of providing a semiconductor substrate, and cleaning by supplying a cleaning medium only to a part of a surface of the semiconductor substrate while supplying a rinsing medium to the surface of the semiconductor substrate with the semiconductor substrate being fixed.

A method of cleaning a semiconductor substrate in accordance with a further aspect of the present invention includes the steps of providing a semiconductor substrate, cleaning by supplying a cleaning medium only to a part of a surface of the semiconductor substrate while fixing the semiconductor substrate, and supplying a rinsing medium to the surface of the semiconductor substrate after the cleaning step.

In the method of cleaning a semiconductor substrate in accordance with the another aspect above or the further aspect above of the present invention, the cleaning step may include at least one selected from the group consisting of the step of supplying an ultrasonically vibrated cleaning medium and the step of supplying a pressurized cleaning medium, to the part of the surface of the semiconductor substrate.

A method of cleaning a semiconductor substrate in accordance with a still further aspect of the present invention includes the steps of providing a semiconductor substrate, providing a medium tank containing a cleaning medium therein for cleaning the surface of the semiconductor substrate, and dipping only an end portion of the semiconductor substrate into the cleaning medium held in the medium tank.

In such a manner, only the end portion of the semiconductor substrate can be cleaned in a simple step as described above. Since a semiconductor substrate often has a laser-printed portion formed on its end portion, only such a printed portion formed at the end portion can surely be cleaned.

Furthermore, since the region other than the end portion of the semiconductor substrate is not in contact with the cleaning liquid, the possibility that the cleaning liquid damages the region other than the end portion can significantly be reduced.

A method of manufacturing a semiconductor device in accordance with other aspect of the present invention uses the method of cleaning a semiconductor substrate in accordance with the another aspect above or further or still further aspects of the present invention.

Accordingly, particles can surely be removed from a part of the surface of the semiconductor substrate such as a laser-printed portion, so that reduction of production yield of the semiconductor device, which results from such particles, can be prevented.

The foregoing and other objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description of the present invention when taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic view illustrating a first embodiment of a cleaning apparatus in accordance with the present invention. [0032]
FIG. 2 is a block diagram illustrating a configuration of the cleaning apparatus shown in FIG. 1. [0033]
FIG. 3 is a flow chart illustrating a method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 1. [0034]
FIG. 4 is a flow chart illustrating the cleaning steps shown in FIG. 3 in more detail. [0035]
FIG. 5 is a flow chart illustrating a modification of the first embodiment of the method of cleaning a semiconductor substrate in accordance with the present invention. [0036]
FIG. 6 is a schematic view illustrating a second embodiment of the cleaning apparatus in accordance with the present invention. [0037]
FIG. 7 is a flow chart illustrating a cleaning method using the cleaning apparatus shown in FIG. 6. [0038]
FIG. 8 is a schematic view showing a third embodiment of the cleaning apparatus in accordance with the present invention. [0039]
FIG. 9 is a flow chart illustrating the method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 8. [0040]
FIG. 10 is a schematic view illustrating an example of a conventional method of cleaning a semiconductor substrate. [0041]
FIG. 11 is a schematic view illustrating another example of a conventional method of cleaning a semiconductor substrate.[0042]

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the followings, embodiments of the present invention will be described with reference to the figures. It is noted that the same or corresponding parts will be denoted with the same reference numerals in the figures and the description thereof will not be repeated. [0043]

First Embodiment

Referring to FIGS. [0044] 1 to 4, a first embodiment of a method of cleaning a semiconductor substrate using a cleaning apparatus in accordance with the present invention will be described.
As can be seen from FIG. 1, in the method of cleaning a semiconductor substrate in accordance with the present invention, only a particular portion of a [0045] substrate 1, which is a semiconductor substrate, that is, a part of substrate 1, for example, a laser-printed portion 6 is cleaned. A cleaning apparatus 10 as a semiconductor substrate cleaning apparatus which performs such a cleaning method includes a control unit 11, a substrate operating unit 14, a chemicals nozzle operating unit 12, and pure water nozzle operating unit 13, as shown in FIG. 2. Control unit 11 controls chemicals nozzle operating unit 12, pure water nozzle operating unit 13 and substrate operating unit 14.
[0046] Substrate operating unit 14 controls a manipulator (not shown) for mounting substrate 1 onto a base 2 as a holding member, a position of base 2, and the like. Base 2 holds substrate 1 to be fixed without rotation. Chemicals nozzle operating unit 12 controls a position of a chemicals nozzle 3 which sprays cleaning liquid 5 as a cleaning medium only to a particular part of substrate 1, as well as a discharge pressure, a discharge flow rate and the like of cleaning liquid 5 in chemicals nozzle 3. It is noted that chemicals nozzle 3 is connected to a pump and a chemicals tank (not shown) through a hose 4. Cleaning liquid 5 is discharged from chemicals nozzle 3 with substrate 1 fixed without rotation, as described later. Furthermore, pure water nozzle operating unit 13 as a rinsing member controls the rinsing conditions such as a position of a pure water nozzle 7 which discharges pure water 9 as a rinsing medium for washing cleaning liquid 5 away from the surface of substrate 1, a discharge flow rate of pure water 9, and the like. Note that pure water nozzle 7 is connected to a pump and a pure water tank (not shown) through a hose 8.
In this way, only laser-printed [0047] portion 6 that is a part of the surface of substrate 1 can be cleaned, since cleaning liquid 5 is supplied to substrate 1 with substrate 1 fixed without rotation. Therefore, when particles exist within a groove representing a character or the like formed in laser-printed portion 6, the particles existing within the groove can be removed by using chemicals with a high cleaning capability as cleaning liquid 5.
Furthermore, since cleaning [0048] liquid 5 is supplied only to laser-printed portion 6 that is the part of the surface of substrate 1, the possibility that the region other than laser-printed portion 6 of the surface of substrate 1 (for example a chip-formed region) is damaged by cleaning liquid 5 can be reduced. In other words, only laser-printed portion 6 can surely be cleaned without causing a damage in the chip-formed region or the like of substrate 1. Therefore, in the semiconductor device formed on the surface of the semiconductor substrate, a defect resulting from the cleaning step can be prevented, and in addition the possibility of a defect resulting from the particles can be reduced. As a result, reduction of production yield of the semiconductor device can be prevented.
Furthermore, when chemicals for cleaning are used as cleaning [0049] liquid 5, the particles can surely be removed from laser-printed portion 6 of substrate 1 by adjusting conditions such as a type or a concentration of chemicals in accordance with the type of particles to be removed from the surface of substrate 1.
Alternatively, pure water may be used as cleaning [0050] liquid 5, as described later. When pure water is used as cleaning liquid 5, a technique such as of spraying pure water onto substrate 1 at high pressure can be used to remove the particles from laser-printed portion 6 of substrate 1. Furthermore, even if pure water as this cleaning medium scatters over the surface region other than laser-printed portion 6 of substrate 1, a damage resulting from the cleaning medium is scarcely caused in this region, because pure water is used as cleaning liquid 5.
Additionally, chemicals [0051] nozzle operating unit 12 as a cleaning member may include an ultrasonic generator for applying an ultrasonic vibration to cleaning liquid 5 such that cleaning liquid 5 as ultrasonically vibrated can be supplied to a part of the surface of substrate 1. Alternatively, chemicals nozzle operating unit 12 may be configured to supply pressurized cleaning liquid 5 to substrate 1.
In this case, the cleaning capability in cleaning a part of the surface of [0052] substrate 1 can be improved.
Furthermore, even if washing [0053] liquid 5 scatters and adheres onto the surface region of substrate 1 other than laser-printed portion 6 to be cleaned, that adhered cleaning liquid 5 can be washed away by pure water 9, as pure water nozzle 7 is installed. Therefore, the possibility that the region other than laser-printed portion 6 of substrate 1 (for example a chip-formed region) is damaged by the scattered cleaning liquid 5 can be reduced.
In addition, in cleaning [0054] apparatus 10, chemicals nozzle operating unit 12 is configured such that cleaning liquid 5 can be supplied to laser-printed portion 6 while pure water 9 is supplied to substrate 1. Therefore, even if cleaning liquid 5 scatters over the region other than laser-printed portion 6 of the surface of substrate 1, that cleaning liquid 5 can immediately be washed away by pure water 9 as a rinsing medium.
A method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIGS. 1 and 2 will now be described. It is noted that a method of cleaning a semiconductor substrate described below is performed as a step of a method of manufacturing a semiconductor device. [0055]
As shown in FIG. 3, a step of providing a substrate (S[0056] 110) is first performed. In this substrate provision step (S110), substrate 1 to be cleaned is arranged on the mounting surface of base 2 using a manipulator or the like. Substrate 1 is fixed on base 2 preferably by such a method as vacuum suction, electrostatic suction or the like.
A positioning step (S[0057] 120) is then performed. In this positioning step (S120), a relative position between substrate 1, chemicals nozzle 3 and pure water nozzle 7 is determined. Chemicals nozzle 3 is arranged at such a position that allows cleaning liquid 5 to be sprayed onto laser-printed portion 6 that is a region to be cleaned, of the surface of substrate 1. Furthermore, pure water nozzle 7 is arranged at such a position that allows scattered cleaning liquid to be washed away from the surface of substrate 1 if cleaning liquid 5 which is sprayed onto laser-printed portion 6 scatters therearound. Pure water nozzle 7 may be arranged, for example, approximately at the center of substrate 1, to supply pure water 9 to the entire surface of substrate 1.
A cleaning step (S[0058] 130) is then performed. Specifically, this cleaning step (S130) includes the following steps. First, as shown in FIG. 4, a step of starting discharge of pure water from pure water nozzle 7 (S131) is performed in order to supply pure water 9 as a rinsing medium to the surface of substrate 1 beforehand. Thereafter, a step of cleaning a particular part by discharging chemicals while flowing pure water (S132) is performed. More specifically, cleaning liquid 5 of chemicals is discharged toward laser-printed portion 6 from chemicals nozzle 3. At this point, substrate 1 is fixed and not rotated.
As a result, laser-printed [0059] portion 6 as a particular part can be cleaned by directly spraying cleaning liquid 5.
Since cleaning [0060] liquid 5 is supplied only to a part of the surface of substrate 1 (laser-printed portion 6), the possibility that the region other than laser-printed portion 6 of the surface of substrate 1 (for example a chip-formed region) is damaged by cleaning liquid 5 can be reduced.
Furthermore, even if cleaning [0061] liquid 5 scatters over the region other than the part of the surface of substrate 1, that cleaning liquid 5 is immediately washed away by pure water 9 as a rinsing medium. Therefore, the possibility of a damage caused by cleaning liquid 5 in the region other than laser-printed portion 6 of substrate 1 can surely be reduced.
As a result, only a part of the surface of [0062] substrate 1 such as laser-printed portion 6 can surely be cleaned without causing a damage in the chip-formed region or the like of substrate 1. Accordingly, the possibility that particles or the like remain in laser-printed portion 6 can be reduced. Therefore, reduction of production yield of a semiconductor device, which results from such particles, can be prevented by applying the cleaning apparatus and method in accordance with the present invention as described above in forming a semiconductor device such as a semiconductor memory device on the surface of substrate 1.
It is noted that in the cleaning step (S[0063] 130) chemicals nozzle 3 may appropriately be moved to correspond to the shape of laser-printed portion 6 or the shape of the character or sign forming the identification label formed in the laser-printed portion. Furthermore, such a technique may be used for cleaning liquid 5 in that megasonic pure water (ultrasonically vibrated pure water) in place of chemicals is sprayed to laser-printed portion 6, ultrasonically vibrated chemicals are sprayed to laser-printed portion 6, and chemicals or pure water at high pressure (pressurized) is sprayed to laser-printed portion 6. Application of such a technique can increase the cleaning capability of cleaning liquid 5.
Additionally, the different cleaning techniques above may be combined for cleaning. Different cleaning methods may be performed successively, for example, by first spraying chemicals to laser-printed [0064] portion 6, then spraying megasonic pure water, and thereafter further spraying pressurized pure water or chemicals (high pressure Jet).
Here, if chemicals for cleaning are used as cleaning [0065] liquid 5, particles can surely be removed from laser-printed portion 6 of substrate 1 by adjusting conditions such as a type or concentration of chemicals for cleaning in accordance with the type of substrate 1 to be cleaned or particles to be removed, as previously mentioned.
On the other hand, in case pure water is used as cleaning [0066] liquid 5, even if this pure water as cleaning liquid 5 scatters over a surface region other than laser-printed portion 6 of substrate 1, a damage is scarcely caused by cleaning liquid 5 on this surface region.
Furthermore, in case pure water is used as the cleaning medium, the cleaning step may be performed without supplying pure water as a rinsing medium from [0067] pure water nozzle 7 to the surface of substrate 1.
In the cleaning step (S[0068] 130), such a method as shown in FIG. 5 may also be used instead of cleaning using cleaning liquid 5 of chemicals with pure water 9 previously supplied to the surface of substrate 1. Referring to FIG. 5, a modification to the first embodiment of the method of cleaning a semiconductor substrate in accordance with the present invention will be described.
As shown in FIG. 5, in the cleaning step (S[0069] 130) (see FIG. 3), a step of discharging chemicals to clean a particular part (S133) is first performed. Specifically, cleaning liquid 5 of chemicals is discharged from chemicals nozzle 3 only to laser-printed portion 6. Here, the entire region of laser-printed portion 6 may surely be cleaned by moving chemicals nozzle 3 as previously mentioned. At this point, substrate 1 is not rotated but fixed.
A step of washing the entire surface of the substrate with pure water (S[0070] 134) is then performed after completion of cleaning. Specifically, the surface of substrate 1 is washed with water by supplying pure water 9 as a rinsing medium from pure water nozzle 7 to the surface of substrate 1. As a result, cleaning liquid 5 remaining on the surface of substrate 1 is washed away.
In this way also, the effect similar to the cleaning method shown in FIGS. [0071] 1 to 4 can result.
It is noted that in the cleaning step (S[0072] 133) shown in FIG. 5, such a technique may be used in that megasonic pure water is sprayed to laser-printed portion 6 in place of chemicals, ultrasonically vibrated chemicals are sprayed to laser-printed portion 6, or pressurized chemicals or pure water is sprayed to laser-printed portion 6. Additionally, the different cleaning methods as described above may be combined for cleaning.

Second Embodiment

Referring to FIGS. 6 and 7, a second embodiment of the cleaning apparatus and a method of cleaning a semiconductor substrate using the cleaning apparatus in accordance with the present invention will be described. [0073]
As shown in FIG. 6, the cleaning apparatus basically has a configuration similar to the first embodiment of the cleaning apparatus in accordance with the present invention, except for the configuration in chemicals nozzle operation unit [0074] 12 (see FIG. 2). More specifically, in the cleaning apparatus shown in FIG. 6, the chemicals nozzle operating unit includes chemicals nozzle 3 and nozzle movement controller 16. Nozzle movement controller 16 is connected to chemicals nozzle 3 through arm 15. As nozzle movement controller 16 moves, chemicals nozzle 3 can freely move within a plane substantially parallel to the surface of substrate 1 as represented by an arrow 17.
Furthermore, coordinate data of a region to be cleaned in [0075] substrate 1 is transmitted through a conductive line from control unit 11 to nozzle movement controller 16. Nozzle movement controller 16 can move chemicals nozzle 3 based on the coordinate data. More specifically, it can move chemicals nozzle 3 onto laser-printed portion 6 to be cleaned (see FIG. 1) based on the coordinate data. As a result, the position of chemicals nozzle 3 can be determined accurately. Therefore, cleaning liquid 5 such as chemicals can be supplied only to the region to be cleaned with high accuracy.
A method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 6 will now be described. The method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 6 basically includes the step (shown in FIG. 3) similar to the first embodiment of the method of cleaning a semiconductor substrate in accordance with the present invention, but differs in the positioning step (S[0076] 120). Specifically, in the method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 6, a step of acquiring coordinate data of a region to be cleaned within substrate 1 (S121), as shown in FIG. 7, is performed in the positioning step (S120) after performing the step of providing a substrate (S110) shown in FIG. 3. More specifically, coordinate data of laser-printed portion 6, that is a region to be cleaned of the surface of substrate 1, for example, is input into control unit 11, and that data is transmitted from control unit 11 to nozzle movement controller 16.
A step of determining a relative position between the chemicals nozzle and the substrate based on the above coordinate data (S[0077] 122) is then performed. Specifically, chemicals nozzle 3 is moved based on the input coordinate data by operating nozzle movement controller 16. Chemicals nozzle 3 is then arranged on a region to be cleaned such as laser-printed portion 6 that is indicated by that coordinate.
Thereafter, the cleaning step (S[0078] 130) is performed in a manner similar to the cleaning method in accordance with the first embodiment of the present invention. Thus, only a particular region within the surface of substrate 1 can be cleaned at high accuracy.
It is noted that in the step of determining a relative position between the chemicals nozzle and the substrate based on coordinate data (S[0079] 122), substrate 1 may be moved rather than moving chemicals nozzle 3. Specifically, base 2 having substrate 1 mounted thereon is configured to be movable within a plane extending in a direction approximately parallel to the surface of substrate 1. For example, an XY stage movable within a plane approximately parallel to the surface of substrate 1 may be used as base 2. Base 2 may then be moved such that the region to be cleaned (laser-printed portion 6) is arranged under chemicals nozzle 3, based on the coordinate data of the region to be cleaned within the substrate. In this example, the coordinate data of a region to be cleaned is transmitted to a controller which controls the operation of base 2 utilizing an XY stage or the like.

Third Embodiment

Referring to FIGS. 8 and 9, a third embodiment of the cleaning apparatus and a method of cleaning a semiconductor substrate using the cleaning apparatus in accordance with the present invention will be described. [0080]
As shown in FIG. 8, the third embodiment of the cleaning apparatus in accordance with the present invention includes a [0081] chemicals tank 18 for holding chemicals 5, and a substrate holding portion (not shown) for holding and moving substrate 1 to dip substrate 1 into chemicals 5.
A method of cleaning a semiconductor substrate using the cleaning apparatus shown in FIG. 8 will now be described. A step of providing [0082] substrate 1 to be cleaned and a step of providing chemicals tank 18 as a medium tank containing cleaning liquid 5 of chemicals as a cleaning medium are first performed. As shown in FIG. 9, a step of determining the position of the substrate (S210) is then performed. Specifically, as shown in FIG. 8, laser-printed portion 6 that is a region to be cleaned within substrate 1 is arranged to be lower. Substrate 1 is then arranged above chemicals tank 18.
A step of dipping only a portion of [0083] substrate 1 into chemicals tank 18 (S220) is then performed. Specifically, substrate 1 is moved in a direction represented by an arrow 20 in FIG. 8. At this point, the substrate holding portion which holds substrate 1 is moved to come close to the side of chemicals tank 18. It is noted that chemicals tank 18 may be moved upward in a direction represented by an arrow 21 with the position of the substrate holding portion and substrate 1 being fixed. Then, as shown in FIG. 8, only laser-printed portion 6 arranged at the end portion of substrate 1 is dipped in chemicals 5 held in chemicals tank 18.
A step of keeping the substrate dipped in the chemicals for a prescribed period of time (S[0084] 230) is then performed. The dipping time is determined depending on the characteristics or size of an object of cleaning in the region to be cleaned such as laser-printed portion 6, or the temperature or composition of chemicals 5.
A step of pulling the substrate out of chemicals layer (S[0085] 240) is then performed. Specifically, substrate 1 is pulled out of chemicals tank 18 in the direction represented by arrow 21 in FIG. 8. It is noted that at this point chemicals tank 18 may be moved in the direction represented by arrow 20 with substrate 1 being fixed.
Thereafter, rinsing or washing with water for removing chemicals remaining on the surface of [0086] substrate 1 is performed. In this way, only a partial region in which laser-printed portion 6 of substrate 1 is formed can be cleaned. Furthermore, chip-formed portion 19 is not in contact with cleaning liquid 5 and therefore this chip-formed portion 19 is not damaged by cleaning liquid 5.
Although the present invention has been described and illustrated in detail, it is clearly understood that the same is by way of illustration and example only and is not to be taken by way of limitation, the spirit and scope of the present invention being limited only by the terms of the appended claims. [0087]

Claims

What is claimed is:

1. A semiconductor substrate cleaning apparatus, comprising:

a holding member holding a semiconductor substrate; and

a cleaning member allowing a cleaning medium to be supplied only to a part of a surface of said semiconductor substrate while said semiconductor substrate held by said holding member is fixed.

2. The semiconductor substrate cleaning apparatus according to claim 1, wherein

said cleaning medium includes at least one selected from the group consisting of cleaning chemicals and pure water.

3. The semiconductor substrate cleaning apparatus according to claim 1, wherein

said cleaning member includes at least one selected from the group consisting of means for supplying ultrasonically vibrated said cleaning medium and means for supplying pressurized said cleaning medium, to the part of the surface of said semiconductor substrate.

4. The semiconductor substrate cleaning apparatus according to claim 1, wherein

said cleaning member includes

a nozzle for supplying said cleaning medium to the surface of said semiconductor substrate, and

position determining means for determining a relative position of said nozzle to the surface of said semiconductor substrate based on coordinate data of said part to be supplied with said cleaning medium, of the surface of said semiconductor substrate.

5. The semiconductor substrate cleaning apparatus according to claim 1, further comprising rinsing means for washing said cleaning medium away from the surface of said semiconductor substrate.

6. The semiconductor substrate cleaning apparatus according to claim 5, wherein

said rinsing means includes means for supplying a rinsing medium to the surface of said semiconductor substrate, and

said cleaning member supplies said cleaning medium only to the part of the surface of said semiconductor substrate while the surface of said semiconductor substrate is supplied with the rinsing medium.

7. A method of cleaning a semiconductor substrate, comprising the steps of:

providing a semiconductor substrate; and

cleaning by supplying a cleaning medium only to a part of a surface of said semiconductor substrate while supplying a rinsing medium to the surface of said semiconductor substrate with said semiconductor substrate being fixed.

8. The method of cleaning a semiconductor substrate according to claim 7, wherein

9. The method of cleaning a semiconductor substrate according to claim 7, wherein

said step of cleaning includes at least one selected from the group consisting of the step of supplying ultrasonically vibrated said cleaning medium and the step of supplying pressurized said cleaning medium, to the part of the surface of said semiconductor substrate.

10. A method of manufacturing a semiconductor device using the method of cleaning a semiconductor substrate according to claim 7.

11. A method of cleaning a semiconductor substrate, comprising the steps of:

providing a semiconductor substrate;

providing a medium tank holding a cleaning medium for cleaning a surface of the semiconductor substrate; and

dipping only an end portion of said semiconductor substrate into said cleaning medium held in said medium tank.