+

US20030092246A1 - Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer - Google Patents

Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer Download PDF

Info

Publication number
US20030092246A1
US20030092246A1 US09/975,437 US97543701A US2003092246A1 US 20030092246 A1 US20030092246 A1 US 20030092246A1 US 97543701 A US97543701 A US 97543701A US 2003092246 A1 US2003092246 A1 US 2003092246A1
Authority
US
United States
Prior art keywords
semiconductor wafer
holding block
assembly system
adhesive composition
meth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US09/975,437
Inventor
Stanley Wanat
Robert Plass
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Clariant International Ltd
Original Assignee
Clariant International Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clariant International Ltd filed Critical Clariant International Ltd
Priority to US09/975,437 priority Critical patent/US20030092246A1/en
Assigned to CLARIANT INTERNATIONAL LTD reassignment CLARIANT INTERNATIONAL LTD ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: PLASS, ROBERT R., WANAT, STANLEY F.
Priority to JP2003535983A priority patent/JP2005505943A/en
Priority to KR10-2004-7005000A priority patent/KR20040041666A/en
Priority to AT02782813T priority patent/ATE332211T1/en
Priority to EP02782813A priority patent/EP1448340B1/en
Priority to DE60212992T priority patent/DE60212992T2/en
Priority to CNB028200500A priority patent/CN100420546C/en
Priority to PCT/EP2002/011043 priority patent/WO2003033208A1/en
Priority to MYPI20023763A priority patent/MY132030A/en
Priority to TW091123455A priority patent/TW593613B/en
Priority to US10/395,747 priority patent/US6924016B2/en
Publication of US20030092246A1 publication Critical patent/US20030092246A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/14—Layer or component removable to expose adhesive

Definitions

  • the present invention provides an assembly system for stationing a semiconductor wafer suitable for the processing of said wafer and also provides a process for manufacturing a semiconductor wafer.
  • substrate wafers are cut by diamond-sawing single crystal silicon rods.
  • it is first necessary to remove the toughened portion of the crystal surface which was produced during the sawing procedure.
  • the first operation for obtaining a blemish-free surface is called “lapping”.
  • the lapping operation employs a coarse abrasive such as coarse alumina or silicon carbide abrasive particles.
  • Lapping removes coarse surface imperfections from the sawing operation.
  • Lapping also provides flatness and parallelism to the surface.
  • a series of polishing steps are employed to eliminate the remaining surface imperfections.
  • a number of silicon wafers are typically mounted or “fixtured” onto a nonceramic (such as metal) or ceramic carrier or polishing head by a template assembly or by an adhesive material, in order to eliminate the need for manually polishing each individual wafer.
  • the template assembly consists of impregnated polyurethane and plastic retaining rings to hold the silicon wafers in place.
  • Adhesive materials may be a wax or a resin dissolved in a suitable solvent.
  • U.S. Pat. No. 5,942,445 discloses a method of manufacturing a semiconductor wafer comprising the steps of flattening a thin disc-shaped wafer obtained right after slicing by surface grinding, and polishing the flattened wafer on both sides simultaneously.
  • This patent discloses the presence of a wax or like adhesive between wafer and a base plate.
  • U.S. Pat. No. 5,534,053 discloses a method for reducing or eliminating static charges on fixturing adhesive films and silicon wafers so treated by adding an antistatic agent to the fixturing adhesive.
  • the present invention provides an assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising:
  • an aqueous adhesive composition interposed between said ceramic block and said semiconductor wafer comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfactants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
  • each R 1 , R 2 , and R 3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R 4 and R 5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R 6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer.
  • the present invention also provides a process for manufacturing a semiconductor wafer, comprising the steps of:
  • aqueous adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
  • each R 1 , R 2 , and R 3 independently is hydrogen or methyl;
  • R is a hydrocarbyl group of 1 to 4 carbon atoms;
  • each R 4 and R 5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms;
  • R 6 is hydrocarbyl group of 1 to 12 carbon atoms;
  • w, x, y, and z independently are a number from 1 to 100;
  • the present invention provides an assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising: (a) a holding block; (b) a semiconductor wafer and (c) an adhesive composition interposed between the holding block and the semiconductor wafer, wherein the adhesive composition adheres more strongly to the holding block than to the semiconductor wafer.
  • the holding block of the present assembly system should preferably be flat, should not warp under temperature change of 0° C. and 100° C. and should be amenable to rapid heating.
  • the holding block is made of a ceramic material, such as silicon carbide, zinc oxide, aluminum oxide, or titanium dioxide material.
  • nonceramic materials that can be used for the holding block include metal and various polymer derived materials such as high temperature thermoset resins, Bakelite, high temperature polyimides, and highly crosslinked polyurethanes.
  • the adhesive composition of the present invention comprises water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfactants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
  • each R 1 , R 2 , and R 3 independently is hydrogen or methyl;
  • R is a hydrocarbyl group of 1 to 4 carbon atoms;
  • each R 4 and R 5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms;
  • R 6 is hydrocarbyl group of 1 to 20 carbon atoms, and in one embodiment 5 to 15 carbon atoms;
  • w, x, y, and z independently are a number from 1 to 100, and in one embodiment, from 1 to 50 carbon atoms; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer.
  • release agent denotes an additive that migrates to the interface between the semiconductor wafer and adhesive composition to facilitate removal of the wafer with a minimum of adhesive transfer to the wafer.
  • hydrocarbyl substituent or “hydrocarbyl group” is used in its ordinary sense, which is well known to those skilled in the art. Specifically, it refers to a group having a carbon atom directly attached to the remainder of the molecule and having predominantly hydrocarbon character.
  • hydrocarbyl groups include:
  • hydrocarbon substituents that is, aliphatic (e.g., alkyl or alkenyl), alicyclic (e.g., cycloalkyl, cycloalkenyl) substituents, and aromatic-, aliphatic-, and alicyclic-substituted aromatic substituents, as well as cyclic substituents wherein the ring is completed through another portion of the molecule (e.g., two substituents together form an alicyclic radical);
  • aliphatic e.g., alkyl or alkenyl
  • alicyclic e.g., cycloalkyl, cycloalkenyl
  • aromatic-, aliphatic-, and alicyclic-substituted aromatic substituents as well as cyclic substituents wherein the ring is completed through another portion of the molecule (e.g., two substituents together form an alicyclic radical);
  • substituted hydrocarbon substituents that is, substituents containing non-hydrocarbon groups which, in the context of this invention, do not alter the predominantly hydrocarbon substituent (e.g., halo (especially chloro and fluoro), hydroxy, alkoxy, mercapto, alkylmercapto, nitro, nitroso, and sulfoxy);
  • hetero substituents that is, substituents which, while having a predominantly hydrocarbon character, in the context of this invention, contain other than carbon in a ring or chain otherwise composed of carbon atoms.
  • Heteroatoms include sulfur, oxygen, nitrogen, and encompass substituents as pyridyl, furyl, thienyl and imidazolyl.
  • no more than two, preferably no more than one, non-hydrocarbon substituent will be present for every ten carbon atoms in the hydrocarbyl group; typically, there will be no non-hydrocarbon substituents in the hydrocarbyl group.
  • the release agent in the present aqueous adhesive composition is present at a level of from 0.05% to 20%, and in one embodiment, from 0.1 to 15%, and in one embodiment, from 0.5% to 10% by weight of the adhesive composition.
  • the water present in the present aqueous adhesive composition is present at a level of 5% to 95%, and in one embodiment, from 30% to 90%, and in one embodiment, from 60% to 80% by weight of the adhesive composition.
  • the resin is present at a level of 5 to 40%, and in one embodiment 10% to 30%, and in one embodiment at 15% to 25% by weight of the adhesive composition.
  • the polyethylene glycol of the present invention preferably has a weight average molecular weight (M w ) ranging from 100 to 50,000, in one embodiment from 100 to 5000, in one embodiment from 5,000 to 30,000, and in one embodiment from 100 to 500. They are available commercially, for example under the name “CRISANOLTM Polyethylene glycol” from Clariant Corporation. In one embodiment, the polyethylene glycol is present at a level of 1-15%, and in one embodiment 4-10% by weight of the adhesive composition.
  • M w weight average molecular weight
  • the fluorine-free ethoxylated surfactant is not particularly limited. Some common examples include those commercially available under the name “NEODOLTM” and “TERGITOLTM”.
  • the fluorosurfactant includes both ionic and nonionic surfactants, and include compounds having perfluoroalkyl groups.
  • the compound having the prefluoroalkyl group is represented is represented by the formula C n F 2n+1 X wherein X is SO 2 or (CH 2 ) 2 OH and n is 4-14.
  • Suitable nonlimiting examples include those fluorosurfactants available from Dupont under the name “ZONYL®”, those available from Dainippon Ink & Chemicals, Inc., under the name “MEGAFACETM”, and those available from 3M under the name “FLUORAD”.
  • the silicone polymers include without limitation polydimethylsiloxane (PDMS) materials, including silicone-urethane copolymers. While not wishing to be bound by theory, it is believed that the silicone polymers migrate to the surface and act as release coats due to their low surface tension. Both “reactive” modified and “nonreactive” modified PDMS polymers can be used.
  • PDMS polydimethylsiloxane
  • Nonreactive modified PDMS materials can be chemically bonded to the adhesive matrix to provide less different adhesive properties in the bulk and at both the upper and lower bonding interfaces.
  • Nonreactive modified PDMS materials include alkoxylate-modified PDMS that have limited water solubility for use in aqueous systems.
  • silicone—urethane copolymers (polyurethane copolymers made with dimethylsiloxane segments) give the properties of a film forming urethane with their high temperature stability combined with ultra high release properties of silicones without phase separation.
  • Such copolymers are commercially available from Dinichiseika Color and Chemicals MFG Co. Ltd. (DNS), and from Polyurethane Specialties Co. Inc.
  • the (meth)acrylic acid or (meth)acrylate polymer can be any polymer comprising acrylic acid, methacrylic acid, an acrylate or a methacrylate repeating unit.
  • the (meth)acrylic acid or (meth)acrylate polymer is a styrene-acrylic acid copolymer.
  • This copolymer preferably has a weight average molecular weight (M w ) ranging from 500 to 300,000 and in one embodiment from 500 to 2500, and in one embodiment from 500 to 50,000. They may be available commercially, for example, under the name “JONCRYL®” from S. C. Johnson Polymer.
  • JONCRYL® materials are usually aqueous solutions containing water, ammonium hydroxide and styrene-acrylic acid copolymers.
  • the styrene acrylic acid copolymer is present in the adhesive composition at a level of about 5 to 40% by weight of the adhesive composition.
  • the polyvinyl acetate is not limited in any way. In one embodiment, it is available as an aqueous emulsion from National Starch Chemical Corporation. In one embodiment, the vinyl acetate is a dextrin-modified polyvinyl acetate. In one embodiment, vinyl acetate polymer comprises a vinyl alcohol-vinyl acetate copolymer. These copolymers can be made by partial hydrolysis of starting polyvinyl acetate with methanol, in the presence of a suitable catalyst such as sodium hydroxide.
  • the vinyl alcohol-vinyl acetate copolymer preferably has a weight average molecular weight (M w ) ranging from 5000 to 250,000 and in one embodiment from 10,000 to 100,000 and in one embodiment from 5,000 to 50,000.
  • M w weight average molecular weight
  • These copolymers are available commercially, for example, under the name “MOWIOL®” available from Clariant Corporation.
  • Some preferred Mowiol copolymers include Mowiol 3-83, Mowiol 8-88, Mowiol 5-72 and Mowiol 15-20. The first number in this nomenclature relates to molecular weight and viscosity, while the second number relates to the degree of hydrolysis.
  • Mowiol 3-83 is 83% hydrolyzed polyvinyl acetate, and has a P w (weight average degree of polymerization) of 350, while Mowiol 8-88 has P w of 1000 and is 88% hydrolyzed polyvinyl acetate.
  • [0046] preferably is an adduct of an ethoxylated nonylphenol with poly(ethyl acrylate-co-methyacrylic acid-co-3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene), said adduct being represented by the formula
  • w, x, y, and z represent respectively the number of repeating units of ethyl acrylate, acrylic acid, 3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene/ethoxylated nonylphenol adduct, as shown, and ethylene oxide.
  • the parameters w, x, and y can be varied by one skilled in the art to obtain appropriate molecular weights of these polymers and the appropriate ratios of the various repeat units.
  • a 25 wt % solution in water of copolymer is available from Aldrich (product number 45,815-5; viscosity 10-100 cps; bp 73° C.).
  • the rosin-modified maleic resin of this invention has no limitations on the kind thereof, and its commercially available products include those available under the names “MALKYDTM” and “HIPARACTM”, such as Malkyd No. 31 and Malkyd No. 32 (by Arakawa Chemicals Co., Ltd.), Hiparac C and Hiparac PR (by Nippon Shellac Co., Ltd.), Harimac 145P and Harimac R-120AH (by Harima Chemical Industry Co., Ltd.), etc.
  • MALKYDTM Malkyd No. 31 and Malkyd No. 32
  • Hiparac C and Hiparac PR by Nippon Shellac Co., Ltd.
  • Harimac 145P and Harimac R-120AH by Harima Chemical Industry Co., Ltd.
  • the novolak resin of the present invention is not limited in any way.
  • Preferred novolak resins include those made from ortho- and para-cresol, and in one embodiment, in order to provide enhanced aqueous base solubilities, the novolak resins are preferentially polyhydroxy-based phenolic resins.
  • the adhesive composition adheres more strongly to the holding block than to the semiconductor wafer. This means that the adhesive force between the holding block and the adhesive composition is stronger than that between the semiconductor wafer and the adhesive composition.
  • the aqueous adhesive composition of the present invention can also contain optional ingredients.
  • Some preferred ingredients include alcohols having 2 to 5 carbon atoms, aqueous ammonium hydroxide solution and biocide compositions.
  • suitable alcohols include ethanol, 1-propanol, 2-propanol (isopropanol), 1- and 2-butanols, and 1-, 2-, and 3-pentanols, with isopropanol being the most preferred.
  • the ammonium hydroxide is a 0.5% to 60wt % dilute solution.
  • biocide compositions include compounds such as dimethyloxazolidine (such as 4,4-dimethyloxazolidine) and 3,44-trimethyloxalidine.
  • the biocide composition is present at a level of 0.05% to 1% by weight of the aqueous adhesive composition.
  • the present invention also provides a process for manufacturing a semiconductor wafer, comprising the steps of:
  • the coated holding block or the coated semiconductor wafer is heated at a temperature of 80-95° C., and in one embodiment, 90-95° C.
  • Tables 3 and 4 below illustrate some formulations with styrene-acrylic acid copolymer resins.
  • TABLE 3 Sample Joncryl PEG Flourad No. Eco 84 7 200 2 FC-430 8 Water 19 41.86 6.98 — 51.16 20 41.69 6.95 0.40 50.95 21 41.41 6.91 1.06 50.62 PEG- 1000 22 42 14 44 23 42 9.3 48.7 24 42 4.7 53.3
  • Table 5 illustrates some formulations with adduct of ethoxylated nonylphenol with poly(ethyl acrylate-co-methyacrylic acid-co-3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene).
  • the adhesive composition is applied to the holding block by spin coating using spray, puddle coating or other solvent based dispense methods.
  • the coated holding block is dried by heating (90-95° C.) the block by hot plate, infrared heaters or forced hot air dryers. Unpolished wafers are adhered to the adhesive by pressing the warm coated block onto the wafer. Adhesion is assisted by applying pressure to the assembly or pulling vacuum on the system while allowing the wafer/adhesive/holding block “sandwich” to cool.
  • the cooled wafer is polished by means of aqueous slurries containing polishing abrasives known to those skilled in the art. These may include, but are not limited to, quartz, pumice, silicon carbide etc. or mixtures thereof.
  • polishing abrasives known to those skilled in the art. These may include, but are not limited to, quartz, pumice, silicon carbide etc. or mixtures thereof.
  • the wafer is polished in a series of finer polishes until the desired surface polish is achieved.
  • the polished wafer/adhesive/holding block array is then rinsed with cold water and air dried with spinning.
  • the polished wafer is finally removed by separating the wafer from the adhesive which essentially remains attached to the holding block.
  • the separation can be accomplished by application of a blade or several blades to the interface between the wafer and the adhesive and exerting enough force to make a clean separation without deforming or breaking the wafer. Any adhesive that remains adhered to the unpolished side of the wafer can be removed/cleaned with a suitable cleaning solution.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Bipolar Transistors (AREA)

Abstract

Disclosed is an assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising: (a) a holding block; (b) a semiconductor wafer; and (c) an aqueous adhesive composition interposed between said ceramic block and said semiconductor wafer, said adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
Figure US20030092246A1-20030515-C00001
wherein each R1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer. Also disclosed is a process for manufacturing a semiconductor wafer, comprising the steps of: (a) providing a holding block; (b) providing a semiconductor wafer; (c) coating said holding block or one side of said semiconductor wafer with the foregoing aqueous adhesive composition; (d) contacting one side of said semiconductor wafer to said coated holding block or said coated side of said semiconductor wafer to said holding block, such that said semiconductor wafer adheres to said coated holding block; (e) polishing the other side of said semiconductor wafer; and (f) removing the semiconductor wafer from the coated ceramic holding block.

Description

    FIELD OF THE INVENTION
  • The present invention provides an assembly system for stationing a semiconductor wafer suitable for the processing of said wafer and also provides a process for manufacturing a semiconductor wafer. [0001]
    • BACKGROUND OF THE INVENTION
  • The ubiquitous integrated chips utilized in the making of modern electronic devices are constructed from small, fragile silicon wafers. It is imperative that these wafers possess flat, blemish-free, mirror-like surfaces, since surface imperfections can adversely affect the electrical properties of the final integrated chips. [0002]
  • Typically, substrate wafers are cut by diamond-sawing single crystal silicon rods. In order to ensure integrated chips of sound structural integrity, it is first necessary to remove the toughened portion of the crystal surface which was produced during the sawing procedure. [0003]
  • The first operation for obtaining a blemish-free surface is called “lapping”. The lapping operation employs a coarse abrasive such as coarse alumina or silicon carbide abrasive particles. Lapping removes coarse surface imperfections from the sawing operation. Lapping also provides flatness and parallelism to the surface. [0004]
  • After the lapping operation, a series of polishing steps are employed to eliminate the remaining surface imperfections. During the polishing operation, a number of silicon wafers are typically mounted or “fixtured” onto a nonceramic (such as metal) or ceramic carrier or polishing head by a template assembly or by an adhesive material, in order to eliminate the need for manually polishing each individual wafer. The template assembly consists of impregnated polyurethane and plastic retaining rings to hold the silicon wafers in place. Adhesive materials may be a wax or a resin dissolved in a suitable solvent. [0005]
  • However, it is desirable to utilize water-based adhesive materials to avoid the problems associated with volatile organic solvents. Furthermore, since the adhesive materials used are derived from natural products (such as rosin), there are inconsistencies associated with batch to batch variations which makes it difficult for one to maintain a tight control on product variation. The batch to batch variation can in turn lead to adhesion problems of the semiconductor wafer to the nonceramic or ceramic carrier or polishing head, leading to wafer defects. Therefore, in order to avoid problems stemming from batch to batch variations, it is also desirable to use adhesive compositions comprising synthetic components or products. The present invention avoids the aforementioned problems in that it provides water-based adhesive compositions and utilizes synthetic components. [0006]
  • U.S. Pat. No. 5,942,445 discloses a method of manufacturing a semiconductor wafer comprising the steps of flattening a thin disc-shaped wafer obtained right after slicing by surface grinding, and polishing the flattened wafer on both sides simultaneously. This patent discloses the presence of a wax or like adhesive between wafer and a base plate. [0007]
  • U.S. Pat. No. 5,534,053 discloses a method for reducing or eliminating static charges on fixturing adhesive films and silicon wafers so treated by adding an antistatic agent to the fixturing adhesive. [0008]
    • SUMMARY OF THE INVENTION
  • The present invention provides an assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising: [0009]
  • (a) a holding block; [0010]
  • (b) a semiconductor wafer; and [0011]
  • (c) an aqueous adhesive composition interposed between said ceramic block and said semiconductor wafer, said adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfactants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula [0012]
    Figure US20030092246A1-20030515-C00002
  • wherein each R[0013] 1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer.
  • The present invention also provides a process for manufacturing a semiconductor wafer, comprising the steps of: [0014]
  • (a) providing a holding block; [0015]
  • (b) providing a semiconductor wafer; [0016]
  • (c) coating said holding block or one side of said semiconductor wafer with an aqueous adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula [0017]
    Figure US20030092246A1-20030515-C00003
  • wherein each R[0018] 1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 12 carbon atoms; w, x, y, and z independently are a number from 1 to 100;
  • (d) contacting one side of said semiconductor wafer (neither side of which is previously coated) to said coated holding block, or said coated side of said semiconductor wafer to said holding block (uncoated) such that said semiconductor wafer adheres to said coated holding block; [0019]
  • (e) polishing the other side of said semiconductor wafer; and [0020]
  • (f) removing the semiconductor wafer from the coated ceramic holding block. [0021]
    • DESCRIPTION OF THE PREFERRED EMBODIMENTS
  • In one aspect, the present invention provides an assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising: (a) a holding block; (b) a semiconductor wafer and (c) an adhesive composition interposed between the holding block and the semiconductor wafer, wherein the adhesive composition adheres more strongly to the holding block than to the semiconductor wafer. [0022]
  • Holding Block [0023]
  • The holding block of the present assembly system should preferably be flat, should not warp under temperature change of 0° C. and 100° C. and should be amenable to rapid heating. In one embodiment, the holding block is made of a ceramic material, such as silicon carbide, zinc oxide, aluminum oxide, or titanium dioxide material. [0024]
  • Suitable examples of nonceramic materials that can be used for the holding block include metal and various polymer derived materials such as high temperature thermoset resins, Bakelite, high temperature polyimides, and highly crosslinked polyurethanes. [0025]
  • The Adhesive Composition [0026]
  • The adhesive composition of the present invention comprises water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfactants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula [0027]
    Figure US20030092246A1-20030515-C00004
  • wherein each R[0028] 1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms, and in one embodiment 5 to 15 carbon atoms; w, x, y, and z independently are a number from 1 to 100, and in one embodiment, from 1 to 50 carbon atoms; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer.
  • As used herein, “release agent” denotes an additive that migrates to the interface between the semiconductor wafer and adhesive composition to facilitate removal of the wafer with a minimum of adhesive transfer to the wafer. [0029]
  • As used herein, the term “hydrocarbyl substituent” or “hydrocarbyl group” is used in its ordinary sense, which is well known to those skilled in the art. Specifically, it refers to a group having a carbon atom directly attached to the remainder of the molecule and having predominantly hydrocarbon character. Examples of hydrocarbyl groups include: [0030]
  • (1) hydrocarbon substituents, that is, aliphatic (e.g., alkyl or alkenyl), alicyclic (e.g., cycloalkyl, cycloalkenyl) substituents, and aromatic-, aliphatic-, and alicyclic-substituted aromatic substituents, as well as cyclic substituents wherein the ring is completed through another portion of the molecule (e.g., two substituents together form an alicyclic radical); [0031]
  • (2) substituted hydrocarbon substituents, that is, substituents containing non-hydrocarbon groups which, in the context of this invention, do not alter the predominantly hydrocarbon substituent (e.g., halo (especially chloro and fluoro), hydroxy, alkoxy, mercapto, alkylmercapto, nitro, nitroso, and sulfoxy); [0032]
  • (3) hetero substituents, that is, substituents which, while having a predominantly hydrocarbon character, in the context of this invention, contain other than carbon in a ring or chain otherwise composed of carbon atoms. Heteroatoms include sulfur, oxygen, nitrogen, and encompass substituents as pyridyl, furyl, thienyl and imidazolyl. In general, no more than two, preferably no more than one, non-hydrocarbon substituent will be present for every ten carbon atoms in the hydrocarbyl group; typically, there will be no non-hydrocarbon substituents in the hydrocarbyl group. [0033]
  • In one embodiment, the release agent in the present aqueous adhesive composition is present at a level of from 0.05% to 20%, and in one embodiment, from 0.1 to 15%, and in one embodiment, from 0.5% to 10% by weight of the adhesive composition. [0034]
  • In one embodiment, the water present in the present aqueous adhesive composition is present at a level of 5% to 95%, and in one embodiment, from 30% to 90%, and in one embodiment, from 60% to 80% by weight of the adhesive composition. [0035]
  • In one embodiment, the resin is present at a level of 5 to 40%, and in one embodiment 10% to 30%, and in one embodiment at 15% to 25% by weight of the adhesive composition. [0036]
  • The polyethylene glycol of the present invention preferably has a weight average molecular weight (M[0037] w) ranging from 100 to 50,000, in one embodiment from 100 to 5000, in one embodiment from 5,000 to 30,000, and in one embodiment from 100 to 500. They are available commercially, for example under the name “CRISANOL™ Polyethylene glycol” from Clariant Corporation. In one embodiment, the polyethylene glycol is present at a level of 1-15%, and in one embodiment 4-10% by weight of the adhesive composition.
  • The fluorine-free ethoxylated surfactant is not particularly limited. Some common examples include those commercially available under the name “NEODOL™” and “TERGITOL™”. [0038]
  • The fluorosurfactant includes both ionic and nonionic surfactants, and include compounds having perfluoroalkyl groups. In one embodiment, the compound having the prefluoroalkyl group is represented is represented by the formula C[0039] nF2n+1X wherein X is SO2 or (CH2)2OH and n is 4-14. Suitable nonlimiting examples include those fluorosurfactants available from Dupont under the name “ZONYL®”, those available from Dainippon Ink & Chemicals, Inc., under the name “MEGAFACE™”, and those available from 3M under the name “FLUORAD”.
  • The silicone polymers include without limitation polydimethylsiloxane (PDMS) materials, including silicone-urethane copolymers. While not wishing to be bound by theory, it is believed that the silicone polymers migrate to the surface and act as release coats due to their low surface tension. Both “reactive” modified and “nonreactive” modified PDMS polymers can be used. [0040]
  • While not wishing to be bound by theory, it is believed that “reactive” modified PDMS materials can be chemically bonded to the adhesive matrix to provide less different adhesive properties in the bulk and at both the upper and lower bonding interfaces. “Nonreactive” modified PDMS materials include alkoxylate-modified PDMS that have limited water solubility for use in aqueous systems. [0041]
  • While not wishing to be bound by theory, it is believed that silicone—urethane copolymers (polyurethane copolymers made with dimethylsiloxane segments) give the properties of a film forming urethane with their high temperature stability combined with ultra high release properties of silicones without phase separation. Such copolymers are commercially available from Dinichiseika Color and Chemicals MFG Co. Ltd. (DNS), and from Polyurethane Specialties Co. Inc. [0042]
  • The (meth)acrylic acid or (meth)acrylate polymer can be any polymer comprising acrylic acid, methacrylic acid, an acrylate or a methacrylate repeating unit. In one embodiment, the (meth)acrylic acid or (meth)acrylate polymer is a styrene-acrylic acid copolymer. This copolymer preferably has a weight average molecular weight (M[0043] w) ranging from 500 to 300,000 and in one embodiment from 500 to 2500, and in one embodiment from 500 to 50,000. They may be available commercially, for example, under the name “JONCRYL®” from S. C. Johnson Polymer. These JONCRYL® materials are usually aqueous solutions containing water, ammonium hydroxide and styrene-acrylic acid copolymers. In one embodiment, the styrene acrylic acid copolymer is present in the adhesive composition at a level of about 5 to 40% by weight of the adhesive composition.
  • The polyvinyl acetate is not limited in any way. In one embodiment, it is available as an aqueous emulsion from National Starch Chemical Corporation. In one embodiment, the vinyl acetate is a dextrin-modified polyvinyl acetate. In one embodiment, vinyl acetate polymer comprises a vinyl alcohol-vinyl acetate copolymer. These copolymers can be made by partial hydrolysis of starting polyvinyl acetate with methanol, in the presence of a suitable catalyst such as sodium hydroxide. The vinyl alcohol-vinyl acetate copolymer preferably has a weight average molecular weight (M[0044] w) ranging from 5000 to 250,000 and in one embodiment from 10,000 to 100,000 and in one embodiment from 5,000 to 50,000. These copolymers are available commercially, for example, under the name “MOWIOL®” available from Clariant Corporation. Some preferred Mowiol copolymers include Mowiol 3-83, Mowiol 8-88, Mowiol 5-72 and Mowiol 15-20. The first number in this nomenclature relates to molecular weight and viscosity, while the second number relates to the degree of hydrolysis. For example Mowiol 3-83 is 83% hydrolyzed polyvinyl acetate, and has a Pw (weight average degree of polymerization) of 350, while Mowiol 8-88 has Pw of 1000 and is 88% hydrolyzed polyvinyl acetate.
  • The polymer represented by the formula [0045]
    Figure US20030092246A1-20030515-C00005
  • preferably is an adduct of an ethoxylated nonylphenol with poly(ethyl acrylate-co-methyacrylic acid-co-3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene), said adduct being represented by the formula [0046]
    Figure US20030092246A1-20030515-C00006
  • wherein w, x, y, and z represent respectively the number of repeating units of ethyl acrylate, acrylic acid, 3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene/ethoxylated nonylphenol adduct, as shown, and ethylene oxide. The parameters w, x, and y can be varied by one skilled in the art to obtain appropriate molecular weights of these polymers and the appropriate ratios of the various repeat units. A 25 wt % solution in water of copolymer is available from Aldrich (product number 45,815-5; viscosity 10-100 cps; bp 73° C.). [0047]
  • The rosin-modified maleic resin of this invention has no limitations on the kind thereof, and its commercially available products include those available under the names “MALKYD™” and “HIPARAC™”, such as Malkyd No. 31 and Malkyd No. 32 (by Arakawa Chemicals Co., Ltd.), Hiparac C and Hiparac PR (by Nippon Shellac Co., Ltd.), Harimac 145P and Harimac R-120AH (by Harima Chemical Industry Co., Ltd.), etc. [0048]
  • The novolak resin of the present invention is not limited in any way. Preferred novolak resins include those made from ortho- and para-cresol, and in one embodiment, in order to provide enhanced aqueous base solubilities, the novolak resins are preferentially polyhydroxy-based phenolic resins. [0049]
  • The adhesive composition adheres more strongly to the holding block than to the semiconductor wafer. This means that the adhesive force between the holding block and the adhesive composition is stronger than that between the semiconductor wafer and the adhesive composition. [0050]
  • The aqueous adhesive composition of the present invention can also contain optional ingredients. Some preferred ingredients include alcohols having 2 to 5 carbon atoms, aqueous ammonium hydroxide solution and biocide compositions. Examples of suitable alcohols include ethanol, 1-propanol, 2-propanol (isopropanol), 1- and 2-butanols, and 1-, 2-, and 3-pentanols, with isopropanol being the most preferred. In one embodiment, the ammonium hydroxide is a 0.5% to 60wt % dilute solution. Examples of biocide compositions include compounds such as dimethyloxazolidine (such as 4,4-dimethyloxazolidine) and 3,44-trimethyloxalidine. In one embodiment, the biocide composition is present at a level of 0.05% to 1% by weight of the aqueous adhesive composition. [0051]
  • The present invention also provides a process for manufacturing a semiconductor wafer, comprising the steps of: [0052]
  • (a) providing a holding block; [0053]
  • (b) providing a semiconductor wafer; [0054]
  • (c) coating said holding block or one side of said semiconductor wafer with the foregoing aqueous adhesive composition; [0055]
  • (d) contacting the coated side of said semiconductor wafer to said holding block (uncoated) or said coated holding block to one side of the semiconductor wafer (neither side of which is previously coated), such that said semiconductor wafer adheres to said coated holding block; [0056]
  • (e) polishing the other uncoated side of said semiconductor wafer; and [0057]
  • (f) removing the semiconductor wafer from the coated ceramic holding block. [0058]
  • In one embodiment, prior to step (d), the coated holding block or the coated semiconductor wafer is heated at a temperature of 80-95° C., and in one embodiment, 90-95° C. [0059]
  • The following specific examples will provide detailed illustrations of the methods of producing and utilizing compositions of the present invention. These examples are not intended, however, to limit or restrict the scope of the invention in any way and should not be construed as providing conditions, parameters or values which must be utilized exclusively in order to practice the present invention. Unless otherwise specified, all parts and percents are by weight. [0060]
    • EXAMPLES Example 1
  • The following adhesive compositions illustrate some typical formulations. All weights are in grams. Tables 1 and 2 below illustrate some formulations with vinyl alcohol-vinyl acetate copolymer resins. [0061]
    TABLE 1
    Sample Mowiol1 Mowiol1 Mowiol1 PEG2 PEG2 PEG2 Isopropyl Bio-Ban-
    No. 8-88 3-88 3-83 200 300 10K Water NH4OH Alcohol CS-11353
    1 — — 18.10 9.05 — — 72.74 — 0.10
    2  1.75 — — — — 2.30 95.95 — —
    3  0.93 — — — 6.66 6.60 59.2 — 26.66
    4 19.00 5.00 76.00
    5 19.50 2.50 78.00
    6 19.75 5.00 75.25
    7 20.00 80.00
    8 18.81 4.34 75.26 1.58
    9 26.40 8.80 47.38 3.31
    (1% NH4OH)
    10 19.80 1.00 79.20
    11 19.60 2.00 78.40
    12 18.18 9.09 72.73
    13 18.10 9.00 72.40 0.50
    14 19.49 1.99 77.97 0.55
    15 19.30 1.97 77.21 1.52
    16 18.10 9.05 72.75 0.10
    Mowiol Mowiol
    5-72 15-20
       (18.10%)
    17 14.89  7.72 77.72
    18 60.00  8.67 31.33
  • [0062]
    TABLE 2
    Sample Mowiol Megaface Tergitol
    No. 3-831 R-084 F242T5 NP-46 Water
    38 99.90 0.100 — — —
    39 99.75 0.25  — — —
    40 80.00 4.00  — — 16.00
    41 99.75 — 0.25 — —
    42 99.50 — 0.50 — —
    43 80.00 — 4.00 — 16.00
    44 99.90 — — 0.10 —
    45 99.75 — — 0.25 —
    46 80.00 — — 4.00 16.00
  • Tables 3 and 4 below illustrate some formulations with styrene-acrylic acid copolymer resins. [0063]
    TABLE 3
    Sample Joncryl PEG Flourad
    No. Eco 847 2002 FC-4308 Water
    19 41.86 6.98 — 51.16
    20 41.69 6.95 0.40 50.95
    21 41.41 6.91 1.06 50.62
    PEG-
    1000
    22 42 14 44
    23 42 9.3 48.7
    24 42 4.7 53.3
  • [0064]
    TABLE 4
    Sample Joncryl Megaface
    No. Eco 847 R-084 Water
    29 49.98 0.050 49.98
    30 49.94 0.12 49.94
    31 44.44 2.22 53.33
    F-242T5
    32 49.94 0.12 49.94
    33 49.88 0.25 49.88
    34 44.44 2.22 53.33
    Tergitol
    NP-46
    35 49.98 0.05 49.98
    36 49.94 0.12 49.94
    37 44.44 2.22 53.33
  • Table 5 below illustrates some formulations with adduct of ethoxylated nonylphenol with poly(ethyl acrylate-co-methyacrylic acid-co-3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene). [0065]
    TABLE 5
    Sample Poly Ac PEG PEG Isopro-
    No. Co9 10K2 3002 Water panol
    25 3.80 9.60 — 48.10 38.50
    26 2.20 5.40 43.50 27.30 21.70
    27 6.25 6.25 12.50 25.00 50.00
    28 48.90 — — — 32.52
    #acid-co-3-(1-isocyanato-1-methylethyl)-alpha-methylstyrene]; from Aldrich (Cat. No. 45,815-5)
    • Example 2
  • Basic Process for Applying Adhesive Composition to Holding Block and Ceramic Wafer [0066]
  • The adhesive composition is applied to the holding block by spin coating using spray, puddle coating or other solvent based dispense methods. The coated holding block is dried by heating (90-95° C.) the block by hot plate, infrared heaters or forced hot air dryers. Unpolished wafers are adhered to the adhesive by pressing the warm coated block onto the wafer. Adhesion is assisted by applying pressure to the assembly or pulling vacuum on the system while allowing the wafer/adhesive/holding block “sandwich” to cool. [0067]
  • The cooled wafer is polished by means of aqueous slurries containing polishing abrasives known to those skilled in the art. These may include, but are not limited to, quartz, pumice, silicon carbide etc. or mixtures thereof. The wafer is polished in a series of finer polishes until the desired surface polish is achieved. [0068]
  • The polished wafer/adhesive/holding block array is then rinsed with cold water and air dried with spinning. The polished wafer is finally removed by separating the wafer from the adhesive which essentially remains attached to the holding block. The separation can be accomplished by application of a blade or several blades to the interface between the wafer and the adhesive and exerting enough force to make a clean separation without deforming or breaking the wafer. Any adhesive that remains adhered to the unpolished side of the wafer can be removed/cleaned with a suitable cleaning solution. [0069]
  • Each of the documents referred to above is incorporated herein by reference. Except in the Examples, or where otherwise explicitly indicated, all numerical quantities in this description specifying amounts of materials, reaction conditions, molecular weights, number of carbon atoms, and the like, are to be understood as modified by the word “about.”[0070]
  • While the invention has been explained in relation to its preferred embodiments, it is to be understood that various modifications thereof will become apparent to those skilled in the art upon reading the specification. Therefore, it is to be understood that the invention disclosed herein is intended to cover such modifications as fall within the scope of the appended claims. [0071]

Claims (23)

What is claimed is:
1. An assembly system for stationing a semiconductor wafer suitable for processing said wafer, said system comprising:
(b) a holding block
(b) a semiconductor wafer; and
(c) an aqueous adhesive composition interposed between said ceramic block and said semiconductor wafer, said adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
Figure US20030092246A1-20030515-C00007
wherein each R1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100; wherein said adhesive composition adheres more strongly to said holding block than to said semiconductor wafer.
2. The assembly system of claim 1, wherein the release agent is present at a level of about 0.05% to about 20% by weight of the adhesive composition.
3. The assembly system of claim 1, wherein the resin is present at a level of about 5% to about 40% by weight of the adhesive composition.
4. The assembly system of claim 1, wherein water is present at a level of about 5% to about 95% by weight of the adhesive composition.
5. The assembly system of claim 1, wherein the fluorosurfactant is a compound having a perfluoroalkyl group, said compound being represented by the formula CnF2n+1X wherein X is SO2 or (CH2)2OH; and n is about 4-14.
6. The assembly system of claim 1, wherein the (meth)acrylic acid or (meth)acrylate based polymer is a styrene-acrylic acid copolymer.
7. The assembly system of claim 1, wherein the vinyl acetate polymer is a vinyl alcohol-vinyl acetate copolymer.
8. The assembly system of claim 7, wherein the vinyl alcohol-vinyl acetate copolymer has a weight average molecular weight (Mw) of about 5,000 to about 250,000.
9. The assembly system of claim 1, wherein the adhesive composition further comprises at least one of the following components: an alcohol having about 2 to 5 carbon atoms, an aqueous ammonium hydroxide solution, and a biocide composition.
10. The assembly system of claim 9, wherein the alcohol is isopropanol.
11. The assembly system of claim 9, wherein the biocide composition comprises at least one compound selected from the group consisting of dimethyloxazolidine and 3,4,4-trimethyloxazolidine.
12. The assembly system of claim 1, wherein the release agent is polyethylene glycol and the resin is a (meth)acrylic acid or (meth)acrylate based polymer.
13. The assembly system of claim 12, wherein the (meth)acrylic acid or (meth)acrylate based polymer is a styrene-acrylic acid copolymer.
14. The assembly system of claim 1, wherein the release agent is polyethylene glycol and the resin is a vinyl acetate polymer.
15. The assembly system of claim 14, wherein the vinyl acetate polymer is a vinyl acetate-vinyl alcohol copolymer.
16. The assembly system of claim 1, wherein the adhesive composition comprises, by weight, about 5% to about 95% water, about 0.05% to about 20% of polyethylene glycol having a weight average molecular weight (Mw) of about 100 to 5000, and about 5% to about 40% of styrene-acrylic acid copolymer having a weight average molecular weight (Mw) of about 500 to about 50,000.
17. The assembly system of claim 16, wherein the styrene-acrylic acid copolymer has a weight average molecular weight (Mw) of about 500 to about 2500.
18. The assembly system of claim 1, wherein the adhesive composition comprises, by weight, about 5% to about 95% water, about 0.05% to about 20% of polyethylene glycol having a weight average molecular weight (Mw) of about 100 to 5000, about 5% to about 40% of vinyl alcohol-vinyl acetate copolymer having a weight average molecular weight (Mw) of about 5000 to 50,000, and 0.05% to 1% of a biocide composition comprising dimethyloxazolidine and 3,4,4-trimethyloxazolidine.
19. The assembly system of claim 1, wherein the holding block is a ceramic holding block.
20. The assembly system of claim 19, wherein the ceramic holding block comprises a silicon carbide, zinc oxide, aluminum oxide, or titanium dioxide material.
21. A process for manufacturing a semiconductor wafer, comprising the steps of:
(a) providing a holding block;
(b) providing a semiconductor wafer;
(c) coating said holding block with an aqueous adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
Figure US20030092246A1-20030515-C00008
wherein each R1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100;
(d) contacting one side of said semiconductor wafer to said coated holding block, such that said semiconductor wafer adheres to said coated holding block;
(e) polishing the other side of said semiconductor wafer; and
(f) removing the semiconductor wafer from the coated ceramic holding block.
22. A process for manufacturing a semiconductor wafer, comprising the steps of:
(a) providing a holding block;
(b) providing a semiconductor wafer;
(c) coating one side of said semiconductor wafer with an aqueous adhesive composition comprising water; at least one release agent selected from the group consisting of polyethylene glycols, fluorine-free ethoxylated surfactants, fluorosurfacants, and silicone polymers; and at least one resin selected from the group consisting of (meth)acrylic acid or (meth)acrylate based polymers, vinyl acetate polymers, rosin-modified maleic resins, novolak resins, and polymers represented by the formula
Figure US20030092246A1-20030515-C00009
wherein each R1, R2, and R3 independently is hydrogen or methyl; R is a hydrocarbyl group of 1 to 4 carbon atoms; each R4 and R5 independently is hydrogen or a hydrocarbyl group of 1 to 4 carbon atoms; R6 is hydrocarbyl group of 1 to 20 carbon atoms; w, x, y, and z independently are a number from 1 to 100;
(d) contacting said coated side of said semiconductor wafer in step (c) to said holding block such that said semiconductor wafer adheres to said coated holding block;
(e) polishing the other uncoated side of said semiconductor wafer; and
(f) removing the semiconductor wafer from the coated ceramic holding block.
23. The process of claim 21, wherein prior to step (d), the coated holding block of step (c) is heated to a temperature of about 80-95° C.
US09/975,437 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer Abandoned US20030092246A1 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
US09/975,437 US20030092246A1 (en) 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
PCT/EP2002/011043 WO2003033208A1 (en) 2001-10-11 2002-10-02 Assembly system for stationing semiconductor wafer and process f or manufacturing semiconductor wafer
EP02782813A EP1448340B1 (en) 2001-10-11 2002-10-02 Assembly system for stationing semiconductor wafer and process for manufactoring semiconductor wafer
KR10-2004-7005000A KR20040041666A (en) 2001-10-11 2002-10-02 Assembly system for stationing semiconductor wafer and process for manufacturing semiconductor wafer
AT02782813T ATE332211T1 (en) 2001-10-11 2002-10-02 CONNECTION SYSTEM FOR FASTENING SEMICONDUCT BOARDS AND METHOD FOR PRODUCING SEMICONDUCT BOARDS
JP2003535983A JP2005505943A (en) 2001-10-11 2002-10-02 Semiconductor wafer fixing assembly system suitable for processing and semiconductor wafer manufacturing method
DE60212992T DE60212992T2 (en) 2001-10-11 2002-10-02 CONNECTION SYSTEM FOR ATTACHING SEMICONDUCTOR PLATES AND METHOD FOR PRODUCING SEMICONDUCTOR PLATES
CNB028200500A CN100420546C (en) 2001-10-11 2002-10-02 Assembly system for fixing semiconductor chip and method for manufacturing semiconductor chip
MYPI20023763A MY132030A (en) 2001-10-11 2002-10-09 Assembly system for stationing semiconductor wafer and process for manufacturing semiconductor wafer
TW091123455A TW593613B (en) 2001-10-11 2002-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
US10/395,747 US6924016B2 (en) 2001-10-11 2003-03-24 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/975,437 US20030092246A1 (en) 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/395,747 Continuation-In-Part US6924016B2 (en) 2001-10-11 2003-03-24 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer

Publications (1)

Publication Number Publication Date
US20030092246A1 true US20030092246A1 (en) 2003-05-15

Family

ID=25523031

Family Applications (2)

Application Number Title Priority Date Filing Date
US09/975,437 Abandoned US20030092246A1 (en) 2001-10-11 2001-10-11 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
US10/395,747 Expired - Fee Related US6924016B2 (en) 2001-10-11 2003-03-24 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer

Family Applications After (1)

Application Number Title Priority Date Filing Date
US10/395,747 Expired - Fee Related US6924016B2 (en) 2001-10-11 2003-03-24 Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer

Country Status (10)

Country Link
US (2) US20030092246A1 (en)
EP (1) EP1448340B1 (en)
JP (1) JP2005505943A (en)
KR (1) KR20040041666A (en)
CN (1) CN100420546C (en)
AT (1) ATE332211T1 (en)
DE (1) DE60212992T2 (en)
MY (1) MY132030A (en)
TW (1) TW593613B (en)
WO (1) WO2003033208A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160126215A1 (en) * 2013-05-27 2016-05-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for assembling two substrates of different natures via a ductile intermediate layer

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6643507B1 (en) 1998-12-31 2003-11-04 At&T Corp. Wireless centrex automatic callback
US20050282961A1 (en) * 2004-06-18 2005-12-22 Hsienkun Tsai Pressure-sensitive label laminates with improved convertability and broad temperature adhesion performance
KR20080059266A (en) * 2005-09-26 2008-06-26 플레이너 솔루션즈 엘엘씨 Ultra high purity colloidal silica for use in chemical mechanical polishing applications
JP5020496B2 (en) * 2005-10-28 2012-09-05 東京応化工業株式会社 Adhesive composition and adhesive film
NL1036215A1 (en) * 2007-12-11 2009-06-15 Asml Netherlands Bv Lithographic method and carrier substrate.
CN101885613B (en) * 2010-07-29 2012-07-04 西安理工大学 Bonding agent for electronic ceramic molding and preparation method thereof
US10556317B2 (en) 2016-03-03 2020-02-11 P.R. Hoffman Machine Products Inc. Polishing machine wafer holder
CN106041739B (en) * 2016-05-27 2018-02-23 华侨大学 A kind of microorganism dressing method of superhard abrasive material grinding tool

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251400A (en) * 1971-11-03 1981-02-17 Borden, Inc. Hot and cold water redispersible polyvinyl acetate adhesives
US3905928A (en) 1974-02-15 1975-09-16 Burlington Industries Inc Hot melt size and yarn sized therewith
US4073756A (en) 1976-04-26 1978-02-14 Konishi Co., Ltd. Solid adhesive compositions
JPS608426Y2 (en) * 1976-12-08 1985-03-25 シャープ株式会社 Semiconductor wafer holding substrate
US5714029A (en) 1984-03-12 1998-02-03 Nitto Electric Industrial Co., Ltd. Process for working a semiconductor wafer
DE3581514D1 (en) * 1984-05-29 1991-02-28 Mitsui Toatsu Chemicals FILM FOR TREATING SEMICONDUCTOR WAFFLES.
JP2807322B2 (en) * 1989-10-09 1998-10-08 三井化学株式会社 Resin composition with excellent antistatic properties
JPH0641504A (en) 1991-07-12 1994-02-15 Saiden Kagaku Kk Alkali soluble type tacky agent composition
KR930006846A (en) * 1991-09-02 1993-04-22 사와무라 하루오 The back grinding method of a semiconductor wafer, and the adhesive tape used for the method
US5196443A (en) * 1991-09-25 1993-03-23 Buckman Laboratories International, Inc. Synergistic combinations of 2-(thiocyanomethylthio) benzothiazole with a mixture of 4,4-dimethyloxazolidine and 3,4,4-trimethyloxazolidine in controlling fungal and bacterial growth in aqueous fluids
US5534053A (en) 1993-01-12 1996-07-09 Rodel, Inc. Composition for reducing or eliminating static charge in adhesive film
JP3410202B2 (en) * 1993-04-28 2003-05-26 日本テキサス・インスツルメンツ株式会社 Adhesive sheet for attaching wafer and method for manufacturing semiconductor device using the same
IL113583A (en) * 1994-05-26 1999-12-22 Rohm & Haas Acrylic pressure sensitive adhesive
TW311927B (en) 1995-07-11 1997-08-01 Minnesota Mining & Mfg
IT1279051B1 (en) 1995-10-27 1997-12-04 3V Sigma Spa COMPOSITIONS THICKENERS IN SOLID FORM CONSISTING OF POLYMERS OR COPOLYMERS AND POLYGLYCOLS
JP2741362B2 (en) * 1995-12-05 1998-04-15 日化精工株式会社 Temporary adhesive for wafer
JPH09260471A (en) * 1996-03-18 1997-10-03 Kazuo Inoue Semiconductor wafer vacuum chuck made of sintered silicon carbide substrate coated with chemically vaporized silicon carbide
JP3620554B2 (en) * 1996-03-25 2005-02-16 信越半導体株式会社 Semiconductor wafer manufacturing method
US5700581A (en) * 1996-06-26 1997-12-23 International Business Machines Corporation Solvent-free epoxy based adhesives for semiconductor chip attachment and process
DE19756614A1 (en) * 1997-12-18 1999-07-01 Wacker Siltronic Halbleitermat Method for assembling and disassembling a semiconductor wafer, and material mixture that is suitable for carrying out the method
JP2000015573A (en) 1998-06-30 2000-01-18 Ibiden Co Ltd Wafer holding plate for wafer polishing device and polishing method of semiconductor wafer
JP4275221B2 (en) * 1998-07-06 2009-06-10 リンテック株式会社 Adhesive composition and adhesive sheet
JP2001226650A (en) * 2000-02-16 2001-08-21 Nitto Denko Corp Radiation-curable and heat-releasable self-adhesive sheet and method of producing cut fragment by using the same
US6952025B2 (en) * 2000-06-08 2005-10-04 Showa Denko K.K. Semiconductor light-emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160126215A1 (en) * 2013-05-27 2016-05-05 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for assembling two substrates of different natures via a ductile intermediate layer
US10679963B2 (en) * 2013-05-27 2020-06-09 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for assembling two substrates of different natures via a ductile intermediate layer

Also Published As

Publication number Publication date
US20030190446A1 (en) 2003-10-09
EP1448340A1 (en) 2004-08-25
DE60212992T2 (en) 2007-02-22
US6924016B2 (en) 2005-08-02
CN100420546C (en) 2008-09-24
MY132030A (en) 2007-09-28
WO2003033208A1 (en) 2003-04-24
DE60212992D1 (en) 2006-08-17
EP1448340B1 (en) 2006-07-05
CN1568244A (en) 2005-01-19
JP2005505943A (en) 2005-02-24
TW593613B (en) 2004-06-21
KR20040041666A (en) 2004-05-17
ATE332211T1 (en) 2006-07-15

Similar Documents

Publication Publication Date Title
US7037838B2 (en) Method for polishing a substrate surface
CN101523566B (en) bonding method of chips and chips stacking pieces
TWI338027B (en)
US7713835B2 (en) Thermally decomposable spin-on bonding compositions for temporary wafer bonding
US20030092246A1 (en) Assembly system for stationing semiconductor wafer suitable for processing and process for manufacturing semiconductor wafer
CN102543665B (en) Improved rapid thinning method for gallium arsenide substrate
TW201120181A (en) Re-peelable adhesive sheet
TW201441332A (en) Adhesive tape for semiconductor processing
TW201938623A (en) Composition for semiconductor process and semiconductor process
WO2016045536A2 (en) Method for preparation of diamond polishing film
CN117659790A (en) Wafer laser cutting protection liquid and preparation method thereof
JPH09208924A (en) Hold-back agent for material to be worked and installing and removing of material to be worked using the same
JPH0673347A (en) Wafer processing tape and method of using the same
US20020187639A1 (en) Process for treating a polished semiconductor water immediately after the semiconductor wafer has been polished
EP4224514A1 (en) Sic epitaxial substrate and method of manufacturing the same
CN210765128U (en) Water-based temperature control viscose glue fixing structure
TW201805374A (en) Peeling composition for processing wafer and the peeling material manufacturing thereof
JP6998838B2 (en) Manufacturing method of thin substrate
JPH05156215A (en) Film for semiconductor wafer processing
JPH05171117A (en) Tape for processing wafer
CN118496768B (en) A chemical mechanical polishing liquid and its application in silicon wafer polishing
JP2000256636A (en) Liquid temporary bonding agent
JP2011236272A (en) Protective film composition and cleaning method
JP2002254325A (en) Abrasive film and manufacturing method therefor
JPH0493382A (en) Adhesive for polishing

Legal Events

Date Code Title Description
AS Assignment

Owner name: CLARIANT INTERNATIONAL LTD, SWITZERLAND

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WANAT, STANLEY F.;PLASS, ROBERT R.;REEL/FRAME:012255/0353

Effective date: 20011011

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION

点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载