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US20030008129A1 - Dielectric material and process of insulating a semiconductor device using same - Google Patents

Dielectric material and process of insulating a semiconductor device using same Download PDF

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US20030008129A1
US20030008129A1 US09/893,104 US89310401A US2003008129A1 US 20030008129 A1 US20030008129 A1 US 20030008129A1 US 89310401 A US89310401 A US 89310401A US 2003008129 A1 US2003008129 A1 US 2003008129A1
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Prior art keywords
porogen
accordance
polymeric material
carbon dioxide
weight
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US09/893,104
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John Cotte
Kenneth McCullough
Wayne Moreau
Kevin Petrarca
John Simons
Charles Taft
Richard Volant
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Elpis Technologies Inc
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International Business Machines Corp
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Priority to US09/893,104 priority Critical patent/US20030008129A1/en
Assigned to INTERNATIONAL BUSINESS MACHINES CORPORATION reassignment INTERNATIONAL BUSINESS MACHINES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: COTTE, JOHN M., MCCULLOUGH, KENNETH J., MOREAU, WAYNE M., PETRARCA, KEVIN, SIMONS, JOHN P., TAFT, CHARLES J., VOLANT, RICHARD
Priority to JP2002184636A priority patent/JP4097250B2/en
Publication of US20030008129A1 publication Critical patent/US20030008129A1/en
Priority to US10/456,299 priority patent/US7056837B2/en
Priority to US11/399,579 priority patent/US7485964B2/en
Assigned to ELPIS TECHNOLOGIES INC. reassignment ELPIS TECHNOLOGIES INC. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: INTERNATIONAL BUSINESS MACHINES CORPORATION
Abandoned legal-status Critical Current

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    • H01L21/02107—Forming insulating materials on a substrate
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    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
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    • H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • Y10T428/24999—Inorganic

Definitions

  • the present invention is directed to a dielectric material and a process of insulating a semiconductor device using same. More specifically, the present invention is directed to a dielectric material prepared by introducing liquid or supercritical carbon dioxide into a polymeric dielectric film and employing the dielectric material to insulate semiconductor devices.
  • CMOS complementary metal oxide semiconductors
  • a new dielectric material is provided.
  • the dielectric material is formed by disposing a polymeric material upon a substrate.
  • the polymer, disposed upon said substrate, is thereupon contacted with liquid or supercritical carbon dioxide under thermodynamic conditions wherein the carbon dioxide is maintained in the liquid or supercritical state.
  • the thermodyamic conditions are then altered to those of ambient temperature and pressure.
  • a process of insulating an electrical assembly which includes semiconductor devices is provided.
  • a polymeric material is disposed upon a surface of an electrical assembly.
  • the electrical assembly is thereupon contacted with liquid or supercritical carbon dioxide under thermodyamic conditions consistent with the maintenance of carbon dioxide in the liquid or supercritical state.
  • the thermodynamic conditions are thereupon adjusted to those of ambient temperature and pressure.
  • FIGURE is a schematic representation of an apparatus employed in a process of contacting a polymeric material with liquid or supercritical carbon dioxide.
  • Materials employed as electrical insulators are characterized by their low dielectric constants. Independent of whether the material is organic or inorganic, a material is deemed a candidate for use as an electrical insulator if it has a dielectric constant of no more than 5. Thus, such inorganic materials as silica, having a dielectric constant of 5, and organic polymers, such as a polyimide, which has a dielectric constant of about 4, are deemed excellent electrical insulators.
  • an organic polymeric material be utilized as an electrical insulator between semiconductor devices. This is so because it is far easier to cast a polymeric film upon an electrical assembly which includes semiconductor devices than to dispose an inorganic material thereupon.
  • polymers utilized as electrical insulators in electrical assemblies employing semiconductor devices are the aforementioned polyimides, as well as fluorinated polyimides, polyorganohydrosilane, polyphenylenes, polysiloxanes, copolymers of divinylsiloxane and bisbenzocyclobutene, polybenzil, polyarylethers and polytetraflurorethylene.
  • polyphenyleries have become the preferred polymer in this application insofar as the dielectric constant of polyphenylene is lower than the previously most commonly used polymer, a polyimide.
  • a particularly preferred class of polyphenylene is the polymer referred to by its trademark name, SiLK®, a polymeric product made by Dow Chemical. Polymers marketed under the SiLK® trademark are described in U.S. Pat. No. 5,965,679, which is incorporated herein by reference. Polyphenylenes, such as SiLK®, have dielectric constants in the order of about 3.5.
  • a material having a dielectric constant as low as 3.5 provides excellent electrical insulating properties.
  • the earlier discussion of requisite electrical insulating properties establishes that even at these low dielectric constants requisite electrical insulation of very thin films is uncertain.
  • an insulating material having a dielectric constant below 3.5 is highly desired in the art.
  • An electrical insulator having a dielectric constant of less than 3.5 is provided in accordance with the process set forth below.
  • the insulator of the present invention is believed to represent a significant advance in the art because the introduction of air into the polymeric dielectric material reduces the dielectric constant to even below 3.5. This is so in that, as those skilled in the art are aware, the dielectric constant of air is 1.
  • polymeric materials within the contemplation of the present invention have dielectric constants below those available in the prior art.
  • the reduction in dielectric constant associated with the introduction of air may not be large in absolute terms but that reduction is associated with significant improvement in insulating capability.
  • a polymeric insulating material is obtained in accordance with the process of the present invention.
  • a semiconductor device such as a silicon wafer
  • an organic electrical insulator such as any of the aforementioned polymers mentioned above.
  • a polyphenylene is particularly preferred.
  • a porogen is provided. That is, prior to contact with liquid or supercritical carbon dioxide, the polymeric material is contacted with a porogen.
  • the porogen of the present invention is preferably selected from the group consisting of water, acetone, toluene, methanol, ethanol, propanol and mixtures thereof. This list of preferred porogens should not be deemed exclusive. Other porogens may be substituted for those mentioned above.
  • porogen is disposed on the surface of the polymer. This method is particularly preferred when a particularly preferred porogen, water, is employed.
  • a second method of introduction of the porogen is dissolving the porogen in the liquid or supercritical carbon dioxide prior to its contact with the polymeric material.
  • the polymer is contacted with a liquid or supercritical carbon dioxide composition wherein the second component, in addition to the carbon dioxide, is the porogen.
  • the porogen is preferably selected from the group consisting of acetone, toluene, methanol ethanol and propanol.
  • the porogen may be present in a concentration of up to 10% by weight, based on the total weight of the solution.
  • a third method of introduction of the porogen employs the expedient of providing a composition of the polymeric dielectric material wherein the porogen is dissolved therein.
  • the porogen is present in a concentration of up to about 1% by weight based on the weight of the polymer or the solubility of the porogen in the polymer which ever is less.
  • water is soluble in SiLK® polyphenylene only to the degree of 0.25% by weight and thus when a composition of water in the polymer SiLK® is employed, the maximum concentration of water is 0.25% by weight.
  • the porogen be present in a concentration of up to about 1% by weight, based on the weight of the polymer. More preferably, the concentration of the porogen is in the range of between about 0.01% and about 1% by weight, based on the total weight of the polymer.
  • the dielectric polymer is polyphenylene, i.e. SiLK®, and a porogen is employed.
  • a porogen is employed.
  • a semiconductor device such as a silicon wafer or the like, upon whose surface a polymeric material having a low dielectric constant is disposed, is denoted by reference numeral 16 .
  • the polymer and, optionally, the porogen introducing steps may occur in the equipment illustrated in the FIGURE, it is preferred that these steps occur outside the apparatus.
  • the step of contacting the device 16 with liquid or supercritical carbon dioxide is conducted in the apparatus depicted in the drawing.
  • the semiconductor device 16 is disposed in a liquid or supercritical carbon dioxide contacting zone 14 of a processing chamber 12 of the apparatus wherein the semiconductor device 16 is exposed to liquid or supercritical carbon dioxide.
  • the chamber 12 and specifically contacting zone 14 , is designed to insure that the liquid or supercritical carbon dioxide remains in the liquid or supercritical state during processing.
  • the processing chamber 12 is maintained at a pressure in the range of between about 1,000 psi and about 8,000 psi. More preferably, the pressure within process chamber 12 is in the range of between about 2,000 psi and about 5,000 psi. Still more preferably, the pressure within process chamber 12 is about 3,000 psi.
  • the temperature within process chamber 12 is maintained in a range of between about 32° C. and about 100° C. Preferably, the temperature within process chamber 12 is maintained in a range of between about 40° C. and about 80° C. Still more preferably, the temperature within process chamber 12 is in the range of about 70° C.
  • process chamber 12 may be controlled by a heat controller 32 which has the capability to monitor the temperature in chamber 12 by means of a thermocouple 25 .
  • the measured temperature is adjusted by heating jacket 18 , controlled by controller 32 , in accordance with temperature control means well known in the art.
  • Liquid or supercritical carbon dioxide is provided into processing chamber 12 by means of a liquid or supercritical carbon dioxide source 30 .
  • the liquid or supercritical carbon dioxide provided by source 30 may be prepressurized by a high pressure pump 28 disposed downstream of the source 30 of the liquid or supercritical carbon dioxide.
  • the high pressure liquid or supercritical carbon dioxide is conveyed into processing chamber 12 by means of conduit 22 . It is noted in passing that means are provided for the introduction of additional components, provided from storage area 36 , to conduit 37 , in communication with conduit 22 .
  • the solvent may be held in storage area 36 and be introduced into processing chamber 12 through conduit 37 which is in flow communication with conduit 22 .
  • liquid or supercritical carbon dioxide may be recycled to provide a closed system.
  • a reservoir 34 is provided. Reservoir 34 collects and/or purifies liquid or supercritical carbon dioxide that exits processing chamber 12 through outduct 24 . The liquid or supercritical carbon dioxide is recycled back into processing chamber 12 through conduit 35 .
  • SiLK® a polyphenylene dielectric material, described in U.S. Pat. No. 5,965,679, incorporated herein by reference, was cast upon a silicon wafer to provide a 500 nanometer (mn) thick layer thereon.
  • the resultant polymeric film was tested to determine its dielectric constant.
  • the dielectric constant of the polyphenylene film was measured using refractive index means, at 248 nm, as measured on an n, k elipsometer, manufactured by J. K. Wollan, using a method described by D. Van Krevelin, Physical Properties of Polymers, Elsevier Press, New York, 1976, at Page 237.
  • thermodynamic conditions in the processing chamber 12 were different than in Example 1. Thermodynamic conditions were maintained at a pressure of 5,027 psi and a temperature of 70° C. Again, the dielectric constant was measured by refractive index means at 248 nm.
  • a 450 nm thick film of SiLK® was disposed on a silicon wafer.
  • a coating of water constituting less than 1% by weight, based on the polymeric film weight, was disposed atop the film layer and placed in contacting zone 14 of processing chamber 12 .
  • supercritical carbon dioxide was introduced into zone 14 of chamber 12 at a pressure of 6,500 psi and a temperature of 70° C. This contact continued for 15 minutes. Conditions in chamber 12 were then returned to ambient by opening the chamber to the atmosphere.
  • the product of this contact was a porous dielectric film layer.
  • Atomic force microscopy and scanning electromicroscopy revealed holes and depressions in the film of over 10 nm.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulating Bodies (AREA)
  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Organic Insulating Materials (AREA)

Abstract

A dielectric material formed by contacting a low dielectric constant polymer with liquid or supercritical carbon dioxide, under thermodynamic conditions which maintain the carbon dioxide in the liquid or supercritical state, wherein a porous product is formed. Thereupon, thermodynamic conditions are changed to ambient wherein carbon dioxide escapes from the pores and is replaced with air.

Description

    BACKGROUND OF THE DISCLOSURE
  • 1. Field of the Invention [0001]
  • The present invention is directed to a dielectric material and a process of insulating a semiconductor device using same. More specifically, the present invention is directed to a dielectric material prepared by introducing liquid or supercritical carbon dioxide into a polymeric dielectric film and employing the dielectric material to insulate semiconductor devices. [0002]
  • 2. Background of the Prior Art [0003]
  • The explosive growth in complementary metal oxide semiconductors (CMOS) has corresponded with a continuing decrease in size of such devices. This decrease in CMOS size has been accompanied by thinner and thinner insulating film layers disposed between CMOSs in electrical assemblies. The requirement that insulating layers be provided as exceedingly thin films has occasioned increased numbers of electrical assembly failures due to electrical shorting. These failures, of course, are due to the inadequate insulating properties of such thin insulating materials. [0004]
  • This problem has not gone unnoticed in the art. Thus, many products and processes have been developed to provide more effective insulating materials having lower dielectric constants Attention is directed to U.S. Pat. Nos. 5,548,159; 5,965,679; 5,965,934; and 6,218,497 which describe polymers having low dielectric constants designed for use in semiconductor applications. Among the polymers developed for use in this application are polyimides, fluorinated polyimides, polyorganohydridosilane, polysiloxanes, polyphenylenes, divinylsiloxane-bisbenzocyclobutene copolymers, polybenzil and polyarylethers. [0005]
  • The use of these polymeric materials has improved insulating characteristics and has reduced short failures of semiconductor-containing electrical assemblies. However, the employment of these newly developed polymers has not completely overcome the aforementioned “shorting” problem. That is, although the dielectric properties of these new polymers are lower than those used heretofore, the degree of electrical insulation provided by these newly developed polymers is oftentimes still inadequate to ensure against shorts between semiconductor devices separated by films of these polymers. [0006]
  • The aforementioned discussion, emphasizing the inability of polymeric films of dielectric materials to insulate between semiconductor devices, suggests that something more than the development of new polymers is required to provide adequate insulating capacity. Certainly, recent developments suggest a need in art for the development of polymeric materials having even lower dielectric constants than those developed to date to satisfy the stringent requirements imposed upon insulating materials used in semiconductor-containing electrical assemblies. [0007]
    • BRIEF SUMMARY OF THE INVENTION
  • A new class of polymeric materials having reduced dielectric constants, suitable for use in electrical assemblies employing recently developed smaller sized semiconductor devices, has now been developed. [0008]
  • In accordance with the present invention a new dielectric material is provided. The dielectric material is formed by disposing a polymeric material upon a substrate. The polymer, disposed upon said substrate, is thereupon contacted with liquid or supercritical carbon dioxide under thermodynamic conditions wherein the carbon dioxide is maintained in the liquid or supercritical state. The thermodyamic conditions are then altered to those of ambient temperature and pressure. [0009]
  • In further accordance with the present invention a process of insulating an electrical assembly which includes semiconductor devices is provided. In this process a polymeric material is disposed upon a surface of an electrical assembly. The electrical assembly is thereupon contacted with liquid or supercritical carbon dioxide under thermodyamic conditions consistent with the maintenance of carbon dioxide in the liquid or supercritical state. The thermodynamic conditions are thereupon adjusted to those of ambient temperature and pressure.[0010]
    • BRIEF DESCRIPTION OF THE DRAWING
  • The present invention will be better understood by reference to a FIGURE which is a schematic representation of an apparatus employed in a process of contacting a polymeric material with liquid or supercritical carbon dioxide.[0011]
    • DETAILED DESCRIPTION
  • Materials employed as electrical insulators are characterized by their low dielectric constants. Independent of whether the material is organic or inorganic, a material is deemed a candidate for use as an electrical insulator if it has a dielectric constant of no more than 5. Thus, such inorganic materials as silica, having a dielectric constant of 5, and organic polymers, such as a polyimide, which has a dielectric constant of about 4, are deemed excellent electrical insulators. [0012]
  • As those skilled in the art are aware, it is preferred that an organic polymeric material be utilized as an electrical insulator between semiconductor devices. This is so because it is far easier to cast a polymeric film upon an electrical assembly which includes semiconductor devices than to dispose an inorganic material thereupon. Among the preferred classes of polymers utilized as electrical insulators in electrical assemblies employing semiconductor devices are the aforementioned polyimides, as well as fluorinated polyimides, polyorganohydrosilane, polyphenylenes, polysiloxanes, copolymers of divinylsiloxane and bisbenzocyclobutene, polybenzil, polyarylethers and polytetraflurorethylene. Recently, polyphenyleries have become the preferred polymer in this application insofar as the dielectric constant of polyphenylene is lower than the previously most commonly used polymer, a polyimide. [0013]
  • A particularly preferred class of polyphenylene is the polymer referred to by its trademark name, SiLK®, a polymeric product made by Dow Chemical. Polymers marketed under the SiLK® trademark are described in U.S. Pat. No. 5,965,679, which is incorporated herein by reference. Polyphenylenes, such as SiLK®, have dielectric constants in the order of about 3.5. [0014]
  • A material having a dielectric constant as low as 3.5 provides excellent electrical insulating properties. The earlier discussion of requisite electrical insulating properties, however, establishes that even at these low dielectric constants requisite electrical insulation of very thin films is uncertain. Clearly, an insulating material having a dielectric constant below 3.5 is highly desired in the art. [0015]
  • An electrical insulator having a dielectric constant of less than 3.5 is provided in accordance with the process set forth below. Although the present invention is not limited by any theory explaining its operation, the insulator of the present invention is believed to represent a significant advance in the art because the introduction of air into the polymeric dielectric material reduces the dielectric constant to even below 3.5. This is so in that, as those skilled in the art are aware, the dielectric constant of air is 1. Thus, independent of the polymeric material employed, polymeric materials within the contemplation of the present invention have dielectric constants below those available in the prior art. The reduction in dielectric constant associated with the introduction of air may not be large in absolute terms but that reduction is associated with significant improvement in insulating capability. [0016]
  • The introduction of air into a polymeric insulating material is obtained in accordance with the process of the present invention. In this process a semiconductor device, such as a silicon wafer, is covered, on at least one of its surfaces, with an organic electrical insulator such as any of the aforementioned polymers mentioned above. Of these polymers, a polyphenylene is particularly preferred. [0017]
  • In a preferred embodiment of the present invention a porogen is provided. That is, prior to contact with liquid or supercritical carbon dioxide, the polymeric material is contacted with a porogen. The porogen of the present invention is preferably selected from the group consisting of water, acetone, toluene, methanol, ethanol, propanol and mixtures thereof. This list of preferred porogens should not be deemed exclusive. Other porogens may be substituted for those mentioned above. [0018]
  • Several methods of contact between the polymeric material and the porogen may be utilized. In a first method, the porogen is disposed on the surface of the polymer. This method is particularly preferred when a particularly preferred porogen, water, is employed. [0019]
  • A second method of introduction of the porogen is dissolving the porogen in the liquid or supercritical carbon dioxide prior to its contact with the polymeric material. In this process variation the polymer is contacted with a liquid or supercritical carbon dioxide composition wherein the second component, in addition to the carbon dioxide, is the porogen. In this embodiment the porogen is preferably selected from the group consisting of acetone, toluene, methanol ethanol and propanol. The porogen may be present in a concentration of up to 10% by weight, based on the total weight of the solution. [0020]
  • A third method of introduction of the porogen employs the expedient of providing a composition of the polymeric dielectric material wherein the porogen is dissolved therein. In this method the porogen is present in a concentration of up to about 1% by weight based on the weight of the polymer or the solubility of the porogen in the polymer which ever is less. For example, water is soluble in SiLK® polyphenylene only to the degree of 0.25% by weight and thus when a composition of water in the polymer SiLK® is employed, the maximum concentration of water is 0.25% by weight. [0021]
  • It is preferred that the porogen be present in a concentration of up to about 1% by weight, based on the weight of the polymer. More preferably, the concentration of the porogen is in the range of between about 0.01% and about 1% by weight, based on the total weight of the polymer. [0022]
  • In a particularly preferred embodiment the dielectric polymer is polyphenylene, i.e. SiLK®, and a porogen is employed. In that preferred embodiment it is preferred to dispose water on the surface of the polyphenylene film layer in a concentration of between about 0.01% to about 1% by weight, based on the weight of the SiLK® film. [0023]
  • Upon formation of pores, into which the carbon dioxide penetrates, the thermodynamic conditions extant in the processing unit are changed to ambient. At ambient temperature and pressure the carbon dioxide becomes a gas and escapes from the pores in the polymeric material. These pores are then filled with air, thus reducing the dielectric constant of the polymeric material. [0024]
  • Turning now to the FIGURE, an apparatus suitable for conducting the process of the present invention is provided. Therein, a semiconductor device, such as a silicon wafer or the like, upon whose surface a polymeric material having a low dielectric constant is disposed, is denoted by [0025] reference numeral 16. Although the polymer and, optionally, the porogen introducing steps may occur in the equipment illustrated in the FIGURE, it is preferred that these steps occur outside the apparatus. Independent of the site of these initial processing steps, the step of contacting the device 16 with liquid or supercritical carbon dioxide is conducted in the apparatus depicted in the drawing.
  • The [0026] semiconductor device 16 is disposed in a liquid or supercritical carbon dioxide contacting zone 14 of a processing chamber 12 of the apparatus wherein the semiconductor device 16 is exposed to liquid or supercritical carbon dioxide. The chamber 12, and specifically contacting zone 14, is designed to insure that the liquid or supercritical carbon dioxide remains in the liquid or supercritical state during processing. Thus, the processing chamber 12 is maintained at a pressure in the range of between about 1,000 psi and about 8,000 psi. More preferably, the pressure within process chamber 12 is in the range of between about 2,000 psi and about 5,000 psi. Still more preferably, the pressure within process chamber 12 is about 3,000 psi. The temperature within process chamber 12 is maintained in a range of between about 32° C. and about 100° C. Preferably, the temperature within process chamber 12 is maintained in a range of between about 40° C. and about 80° C. Still more preferably, the temperature within process chamber 12 is in the range of about 70° C.
  • Since it is critical that the above thermodynamic conditions be maintained during the processing of the present invention, [0027] process chamber 12 may be controlled by a heat controller 32 which has the capability to monitor the temperature in chamber 12 by means of a thermocouple 25. The measured temperature is adjusted by heating jacket 18, controlled by controller 32, in accordance with temperature control means well known in the art.
  • Liquid or supercritical carbon dioxide is provided into [0028] processing chamber 12 by means of a liquid or supercritical carbon dioxide source 30. As shown in the FIGURE, the liquid or supercritical carbon dioxide provided by source 30 may be prepressurized by a high pressure pump 28 disposed downstream of the source 30 of the liquid or supercritical carbon dioxide. The high pressure liquid or supercritical carbon dioxide is conveyed into processing chamber 12 by means of conduit 22. It is noted in passing that means are provided for the introduction of additional components, provided from storage area 36, to conduit 37, in communication with conduit 22. In the embodiment wherein a carbon dioxide composition is provided the solvent may be held in storage area 36 and be introduced into processing chamber 12 through conduit 37 which is in flow communication with conduit 22.
  • It is emphasized that the liquid or supercritical carbon dioxide may be recycled to provide a closed system. In that preferred embodiment a [0029] reservoir 34 is provided. Reservoir 34 collects and/or purifies liquid or supercritical carbon dioxide that exits processing chamber 12 through outduct 24. The liquid or supercritical carbon dioxide is recycled back into processing chamber 12 through conduit 35.
  • The following examples are given to illustrate the scope of the present invention. Because these examples are given for illustrative purposes only, the present invention should not be deemed limited thereto. [0030]
    • COMPARATIVE EXAMPLE 1
  • SiLK®, a polyphenylene dielectric material, described in U.S. Pat. No. 5,965,679, incorporated herein by reference, was cast upon a silicon wafer to provide a 500 nanometer (mn) thick layer thereon. The resultant polymeric film was tested to determine its dielectric constant. The dielectric constant of the polyphenylene film was measured using refractive index means, at 248 nm, as measured on an n, k elipsometer, manufactured by J. K. Wollan, using a method described by D. Van Krevelin, [0031] Physical Properties of Polymers, Elsevier Press, New York, 1976, at Page 237.
  • A summary of this example appears in the Table. [0032]
    • EXAMPLE 1
  • A silicon wafer, upon which a 500 nm thick layer of SiLK® was also disposed, was treated in an apparatus illustrated in the FIGURE in which the semiconductor device was exposed to supercritical carbon dioxide, at a pressure of 2,000 psi and a temperature of 32° C., for 5 minutes. Thereupon, processing [0033] chamber 12 was returned to ambient thermodynamic conditions. The thus treated silicon wafer was removed from the chamber 12 and the dielectric constant of the insulating polyphenylene film was again measured in accordance with the method discussed above.
  • A summary of this example is included in the Table. [0034]
    • EXAMPLE 2
  • Yet a third sample was also processed in [0035] chamber 12. However, although this sample was exposed to supercritical carbon dioxide for 5 minutes, thermodynamic conditions in the processing chamber 12 were different than in Example 1. Thermodynamic conditions were maintained at a pressure of 5,027 psi and a temperature of 70° C. Again, the dielectric constant was measured by refractive index means at 248 nm.
  • A summary of this example is included in the Table. [0036]
    TABLE
    SiLK ® 500 nm
    on Silicon Wafer Supercritical CO2
    EXAMPLE NO. Treatment Dielectric Constant
    Comparative
    1 None 3.39
    1 2000 psi/32° C. for 5 min 3.32
    2 5027 psi/70° C. for 5 min 3.29
    • EXAMPLE 3
  • A 450 nm thick film of SiLK® was disposed on a silicon wafer. A coating of water constituting less than 1% by weight, based on the polymeric film weight, was disposed atop the film layer and placed in contacting [0037] zone 14 of processing chamber 12. Thereupon, supercritical carbon dioxide was introduced into zone 14 of chamber 12 at a pressure of 6,500 psi and a temperature of 70° C. This contact continued for 15 minutes. Conditions in chamber 12 were then returned to ambient by opening the chamber to the atmosphere.
  • The product of this contact was a porous dielectric film layer. Atomic force microscopy and scanning electromicroscopy revealed holes and depressions in the film of over 10 nm. [0038]
  • The above embodiments and examples are provided to illustrate the scope and the spirit of the invention. These embodiment and examples will make apparent, to those skilled in the art, other embodiments and examples. These other embodiments and examples are within the contemplation of the present invention. Therefore, the present invention should be limited only by the appended claims. [0039]

Claims (20)

What is claimed is:
1. A dielectric material comprising the product formed by the steps of:
disposing a polymeric material upon a substrate;
contacting said polymeric material with liquid or supercritical carbon dioxide under thermodynamic conditions consistent with the retention of carbon dioxide in said liquid or supercritical state; and
adjusting said thermodynamic conditions to ambient temperature and pressure.
2. A dielectric material in accordance with claim 1 wherein said polymeric material is selected from the group consisting of polyimides, fluorinated polyimides, polyorganohydridosilane, polysiloxanes, polyphenylenes, copolymers of divinylsiloxane and bisbenzocyclobutene, polybenzil, polyarylethers and polytetrafluoroethylene.
3. A dielectric material in accordance with claim 2 wherein said polymeric material is a polyphenylene.
4. A dielectric material in accordance with claim 1 wherein said polymeric material is contacted with liquid or supercritical carbon dioxide in the presence of a porogen.
5. A dielectric material in accordance with claim 4 wherein said porogen is present by disposing said porogen on said polymeric material, by combining said porogen with said polymeric material or by combining said porogen with said liquid or supercritical carbon dioxide.
6. A dielectric material in accordance with claim 5 wherein said porogen is present by dispersing water over a polyphenylene film, wherein said water constitutes between about 0.01% and about 1% by weight, based on the weight of said polyphenylene.
7. A dielectric material in accordance with claim 5 wherein said porogen is present by dissolving a porogen in a concentration of up to about 10% by weight, based on the total weight of said liquid or supercritical carbon dioxide, wherein said porogen selected from the group consisting of acetone, toluene, methanol, ethanol and propanol in said liquid or supercritical carbon dioxide.
8. A dielectric material in accordance with claim 5 wherein said porogen is present by combining up to about 1% by weight of a porogen, based on the weight of said polymeric material, with said polymeric material, said porogen selected from the group consisting of acetone, toluene, methanol, ethanol and propanol.
9. A dielectric material in accordance with claim 8 wherein said porogen is water, present in a concentration of up to about 0.25% by weight, and said polymeric material is a polyphenylene.
10. A dielectric material in accordance with claim 1 wherein said substrate is a silicon wafer.
11. A dielectric material comprising a product formed by the steps of:
(a) casting a polyphenylene upon a silicon wafer;
(b) disposing water on a surface of said cast polyphenylene, said water present in a concentration of between about 0.01% and about 1%, said percentages being by weight, based on the total weight of said cast polyphenylene;
(c) contacting said polyphenylene with liquid or supercritical carbon dioxide under a pressure in the range of between about 1,000 psi and about 8,000 psi and a temperature in the range of between about 32° C. and about 100° C.; and
(d) changing said thermodynamic conditions to ambient temperature and pressure.
12. A process of insulating an electrical assembly which includes semiconductor devices comprising the steps of:
(a) disposing a polymeric material upon a surface of a semiconductor device;
(b) contacting said polymeric material with liquid or supercritical carbon dioxide under thermodynamic conditions consistent with the maintenance of carbon dioxide in said liquid or supercritical state; and
(c) adjusting said thermodynamic conditions under which said semiconductor device is maintained to those of ambient temperature and pressure.
13. A process in accordance with claim 12 wherein said polymeric material is selected from the group consisting of polyimides, fluorinated polyimides, polyorganohydrosilane, polysiloxanes, polyphenylenes, copolymers of divinylsiloxane and bisbenzocyclobutene, polybenzyl, polyarylethers and polytetrafluoroethylene.
14. A process in accordance with claim 13 wherein said polymeric material is a polyphenylene.
15. A process in accordance with claim 12 including the step of contacting said polymeric material with a porogen prior to contacting said polymeric material with liquid or supercritical carbon dioxide.
16. A process in accordance with claim 15 wherein said porogen contacting step comprises disposing said porogen in a concentration of between about 0.01% and about 1% on a polyphenylene film, said percentages being by weight based on the weight of said polyphenylene.
17. A process in accordance with claim 15 wherein said porogen contacting step comprises dissolving up to about 10% of said porogen, said porogen selected from the group consisting of acetone, toluene, methanol, ethanol and propanol, in said liquid or supercritical carbon dioxide, said percentage being by weight, based on the total weight of said solution.
18. A process in accordance with claim 15 wherein said porogen contacting step comprises combining up to about 1% of said porogen, said porogen selected from the group consisting of acetone, toluene, methanol, ethanol and propanol, in said polymeric material, said percentage being by weight, based on the weight of said polymeric material.
19. A process in accordance with claim 15 wherein said porogen contacting step comprises combining up to about 0.25% of water in a polyphenylene, said percentage based on the weight of said polyphenylene.
20. A process in accordance with claim 12 wherein said step (b) occurs at a temperature in the range of between about 32° C. and about 100° C. and at a pressure in the range of between about 1,000 psi and about 8,000 psi.
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145304A1 (en) * 2004-12-30 2006-07-06 Boyan Boyanov Forming a porous dielectric layer and structures formed thereby
WO2012176129A2 (en) * 2011-06-23 2012-12-27 Schlumberger Technology B.V. Matrix permittivity determination

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003347291A (en) * 2002-05-30 2003-12-05 Semiconductor Leading Edge Technologies Inc Method for forming inorganic porous film
US8753986B2 (en) 2009-12-23 2014-06-17 Air Products And Chemicals, Inc. Low k precursors providing superior integration attributes
CN107507683B (en) * 2017-08-16 2019-08-27 广东海翔教育科技有限公司 A kind of enhanced environment-friendlyinsulation insulation material processing unit (plant) and preparation method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4716073A (en) 1986-06-02 1987-12-29 E. I. Du Pont De Nemours And Company Thin wall high performance insulation on wire
US5158986A (en) * 1991-04-05 1992-10-27 Massachusetts Institute Of Technology Microcellular thermoplastic foamed with supercritical fluid
US5422377A (en) * 1994-04-06 1995-06-06 Sandia Corporation Microporous polymer films and methods of their production
US5548159A (en) 1994-05-27 1996-08-20 Texas Instruments Incorporated Porous insulator for line-to-line capacitance reduction
US5550405A (en) 1994-12-21 1996-08-27 Advanced Micro Devices, Incorporated Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS
JP4240540B2 (en) * 1996-08-27 2009-03-18 トレクセル・インコーポレーテッド Method and apparatus for extruding microporous polymer
US5965679A (en) 1996-09-10 1999-10-12 The Dow Chemical Company Polyphenylene oligomers and polymers
US5908510A (en) 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6218497B1 (en) 1997-04-21 2001-04-17 Alliedsignal Inc. Organohydridosiloxane resins with low organic content
US6008540A (en) 1997-05-28 1999-12-28 Texas Instruments Incorporated Integrated circuit dielectric and method
US6077792A (en) * 1997-07-14 2000-06-20 Micron Technology, Inc. Method of forming foamed polymeric material for an integrated circuit
US6083565A (en) 1998-11-06 2000-07-04 North Carolina State University Method for meniscus coating with liquid carbon dioxide
US6159842A (en) * 1999-01-11 2000-12-12 Taiwan Semiconductor Manufacturing Company Method for fabricating a hybrid low-dielectric-constant intermetal dielectric (IMD) layer with improved reliability for multilevel interconnections
US6612317B2 (en) * 2000-04-18 2003-09-02 S.C. Fluids, Inc Supercritical fluid delivery and recovery system for semiconductor wafer processing
US6875687B1 (en) * 1999-10-18 2005-04-05 Applied Materials, Inc. Capping layer for extreme low dielectric constant films
US6858089B2 (en) * 1999-10-29 2005-02-22 Paul P. Castrucci Apparatus and method for semiconductor wafer cleaning
US6413827B2 (en) * 2000-02-14 2002-07-02 Paul A. Farrar Low dielectric constant shallow trench isolation
US6486078B1 (en) * 2000-08-22 2002-11-26 Advanced Micro Devices, Inc. Super critical drying of low k materials
TWI227043B (en) * 2000-09-01 2005-01-21 Koninkl Philips Electronics Nv Method of manufacturing a semiconductor device
US6432811B1 (en) * 2000-12-20 2002-08-13 Intel Corporation Method of forming structural reinforcement of highly porous low k dielectric films by Cu diffusion barrier structures
US6479391B2 (en) 2000-12-22 2002-11-12 Intel Corporation Method for making a dual damascene interconnect using a multilayer hard mask
US6528409B1 (en) * 2002-04-29 2003-03-04 Advanced Micro Devices, Inc. Interconnect structure formed in porous dielectric material with minimized degradation and electromigration
US6764873B2 (en) * 2002-07-18 2004-07-20 International Business Machines Corporation Semiconductor wafer including a low dielectric constant thermosetting polymer film and method of making same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060145304A1 (en) * 2004-12-30 2006-07-06 Boyan Boyanov Forming a porous dielectric layer and structures formed thereby
US20060145305A1 (en) * 2004-12-30 2006-07-06 Intel Corporation Forming a porous dielectric layer and structures formed thereby
US7179755B2 (en) * 2004-12-30 2007-02-20 Intel Corporation Forming a porous dielectric layer and structures formed thereby
US7544896B2 (en) 2004-12-30 2009-06-09 Intel Corporation Forming a porous dielectric layer and structures formed thereby
WO2012176129A2 (en) * 2011-06-23 2012-12-27 Schlumberger Technology B.V. Matrix permittivity determination
WO2012176129A3 (en) * 2011-06-23 2013-04-11 Schlumberger Technology B.V. Matrix permittivity determination
US9366613B2 (en) 2011-06-23 2016-06-14 Schlumberger Technology Corporation Matrix permitivity determination

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