US20020045346A1

US20020045346A1 - Formation of diamond particle interconnects

Info

Publication number: US20020045346A1
Application number: US09/187,363
Authority: US
Inventors: Jerry Zimmer; Daniel A. Worsham
Original assignee: Individual
Current assignee: SP3; Pacific Western Systems Inc
Priority date: 1998-06-25
Filing date: 1998-11-06
Publication date: 2002-04-18
Anticipated expiration: 2018-06-25
Also published as: US6448184B1

Abstract

Conductive diamond film regions on a substrate for establishing electrical contact with a surface mount semiconductor package, or the like, is formed by heating the substrate base in a diamond film gas phase deposition reactor, then introducing molecular hydrogen, a carbon bearing gas, and a dopant source into the reactor at a temperature sufficient to produce a conductive polycrystalline diamond layer. Then the polycrystalline diamond layer is etched down to the substrate base in regions where no contact will exist with the surface mount packages to define a desired pattern of conductive polycrystalline diamond in regions of the packages where electrical contact is desired. The substrate is then brought into pressure contact with a surface mount semiconductor package, or the like.

Description

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation-in-part of application Ser. No. 09/104,881 filed Jun. 25, 1998.[0001]

TECHNICAL FIELD

The invention relates to formation of electrical contacts between an electron device and a substrate and, more particularly, to in-situ formation of conductive diamond film regions for crystalline particle interconnects with an electron device.

BACKGROUND ART

Particle interconnects are conductive particles embedded in conductive traces on an insulative or semiconductive substrate for scratching the surface of an electron device, usually a semiconductor chip, for the purpose of making electrical contact upon mechanical compression of the chip and substrate. Diamond particles screened to sizes between 10 and 125 microns are electrically plated onto a substrate in patterns defined by standard photoresist processes used in the semiconductor industry. The patterns are designed to match leads or pins or contacts of semiconductor chips. Upon pressing a chip onto a substrate having diamond particles embedded in patterns of corresponding traces, electrical contact is made along the traces through the leads, pins or contacts of the chip.

In another approach, diamond particles are sifted down to 100 grit material which is trapped in a screen having pores of similar dimensions. The screen is placed on a metalized surface, rolled onto the surface, then plated over to keep the diamond particles in place.

U.S. Pat. No. 5,083,697 to Difrancesco teaches a method of joining two metal surfaces using metallized particles having a hardness greater than the metals to be joined. The patent teaches that high local stress causes elastoplastic deformation which promotes formation of diffusion bonds between the materials.

Exatron Corporation of San Jose, Calif. has devised a micro-miniature bed-of-nails formed by diamond particles in an electroplate matrix on a substrate. The particles make electrical connection between contacts of a chip and the substrate by penetrating the oxides on the contacts by scratching through surface oxide layers. The particles are small enough so that the contacts are not damaged, but large enough so that a low resistance path is established. The prior art approach is shown in FIG. 1. A

support

11 carries an insulative layer 13, such as a ceramic, polyimide or Kapton layer which is only a few thousandths of an inch thick. A thin conductive layer 15, thinner than insulative layer 13, is electroplated onto the insulative layer. The conductive layer is a matrix, such as nickel, for holding small diamond particles 17, some of which are shown protruding from the conductive layer 15. An electrical lead 19 is shown to have an oxide coating 21. This oxide coating is penetrated or scratched by diamond particles 17 when lead 19 is pushed down onto conductive layer 15, thereby establishing electrical contact between lead 19 and conductive layer 15.

A typical dimension for the width or thickness of

electrical lead

19 with oxide coating 21 is indicated by the letter “A” and is about 0.010 inches. The height of diamond particles 17 above conductive layer 15 is indicated by the letter “B” and is about 0.001 inches. The combined height of diamond particles 17, conductive layer 15 and insulative layer 13 is indicated by the letter “C” and is about 0.004 inches.

While particle interconnect technology looks promising, the formation of diamond particle electroplate slurries is difficult because of non-uniformities in the mixture. Diamond particles tend to clamp together due to electrostatic forces and mixing difficulties. If the electroplate slurry is not uniform the deposited diamond film will be non-uniform. An object of the invention has been to devise a method of forming uniform diamond particle conductive traces for electrical interconnects.

SUMMARY OF INVENTION

The above object has been achieved by in-situ formation of a conductive polycrystalline diamond layer on a substrate. The layer has sharp crystalline diamond facets projecting therefrom and is formed so that portions of the layer are in appropriate places for making electrical contact with a semiconductor device which will be brought into pressure contact with the layer. Rather than providing a slurry of electroplate material with diamond particles mixed therein, the present invention provides a single conductive diamond film layer, with portions of the film having sharp diamond crystal facets extending from the film.

In one embodiment, a substrate or base capable of withstanding 800° C. without deformation is placed in a heated diamond film gas phase deposition reactor. Such reactors have been known for a long time and are commercially available. A diamond film is formed over the whole surface of the substrate by introducing molecular hydrogen, a carbon bearing gas, such as an alkane, to be cracked within the reactor to form molecular carbon and a dopant source, all at a temperature conducive to the deposition of a polycrystalline diamond layer on the substrate base. The polycrystalline diamond layer, having exposed sharp facets, is etched down to the substrate base to define a desired pattern of contact zones and traces of polycrystalline diamond particles for use as interconnects. The dopant source provides sufficient conductivity so that the diamond particles themselves and the film may form conductive traces for electrical contact with a device, particularly where the substrate does not have previously formed metal traces.

The described in-situ formation method has no matrix which holds the diamond particles. Rather, the diamond particles are in a continuous diamond film with crystalline facets projecting from the film. This is a distinct change relative to the prior art which has taken the approach of embedding diamond particles in various matrices for different applications. A diamond film has the distinct advantage of uniformity because mixing of particles within the matrix is not necessary. Diamond crystal facets appear randomly, but with sufficient density that good electrical contact is assured.

In another embodiment, a substrate is roughened by abrading with diamond grit to remove oxides or other films. The substrate is placed in a diamond film reactor as above. A diamond film is formed in-situ on the substrate by introducing molecular hydrogen, a carbon bearing gas to be cracked within the reactor to form molecular carbon and a dopant source, all at a temperature conducive to the deposition of a polycrystalline diamond layer on the substrate base. The diamond layer is etched where no contacts are wanted, leaving polycrystalline diamond film on the contact regions.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a side plan view of a prior art diamond particle interconnect between an electrical lead and an electroplated matrix on a substrate. [0013]
FIGS. [0014] 2A-2G are side plan views of a method of making diamond particle interconnects in accord with the present invention.
FIG. 3 is a side plan view of a diamond particle interconnect region in accord with the present invention. [0015]
FIG. 4 is a photomicrograph of a diamond particle layer for forming interconnects in accord with the present invention. [0016]

BEST MODE OF CARRYING OUT THE INVENTION

With reference to FIG. 2A, a [0017] thin substrate 25 is placed on a support surface. The substrate 25 is an insulating material such as ceramic, silicon, silicon carbide, or other material which will withstand temperatures up to 1000° C. without deformation. The substrate may have conductive metal traces thereon, not shown, terminating in contact zones where conductive diamond film islands are to be formed. Alternatively, the conductive traces can be formed by the conductive diamond film islands described below.
Next the substrate is placed in a hot filament reactor at a temperature of approximately 700 to 1000° C. The reactor is open to gas flow of a carbon bearing gas, such as methane, in the presence of hydrogen. A dopant source containing boron, such as diborane, B[0018] ₂H₆, is also present in the reactor. This causes the formation of a conductive polycrystalline diamond film coating 29, seen in FIG. 2B. Some of the hydrogen gas is dissociated into atomic hydrogen and etches any graphite deposited on the substrate without attacking the diamond, causing the deposition of carbon which self-organizes into diamond crystals. The reactor conditions may be adjusted so that the principal deposition of the diamond film is in the form of pyramids having a 1-1-0 or 1-1-1 crystal orientation, with a density of at least 2000 facets per square millimeter. Different reactors may form the deposition at different temperatures, depending on the type of the reactor. A preferred reactor is a tungsten wire array reactor, long known in the diamond film industry.
Once the thin [0019] diamond film layer 29 has been deposited over substantially the entirety of the substrate, a hard masking layer 31 is applied over the entirety of the surface, as seen in FIG. 2C. The hard mask layer is preferably aluminum which is vapor deposited or sputtered onto the diamond film layer 31 to a thickness of approximately one micron. The surface of the aluminum layer will oxidize to form aluminum oxide. On the other hand, non-oxidizing materials may be used for the hard mask layer 31 such as chrome, polysilicon or silicon nitride. Metals are usually sputtered or vapor deposited onto the diamond film layer, while silicon materials are vapor deposited.
Next, a layer of [0020] photoresist 32 is applied over the entirety of the surface to a thickness of a few microns, as seen in FIG. 2D. Next, the photoresist is patterned so that contact areas of the diamond film will be defined. Contact areas are those areas where conductive diamond contact with a chip or device is desired. Patterning of the photoresist, followed by removal of unwanted portion, leaves islands of photoresist 32 a, as seen in FIG. 2E, protecting the desired diamond contact zones, but exposing portions of the hard mask layer 31, such as region 36. Next, the exposed aluminum region 36 is etched with a base, such as KOH which attacks the aluminum, but does not affect the photoresist island 32 a, or diamond film regions. The resulting structure is seen in FIG. 2F where aluminum islands 31 a remain under photoresist regions 32 a, with exposed diamond film regions 38.
Next, a reactive ion etch (RIE) is used to remove the exposed [0021] diamond film regions 38, as well as the remaining photoresist, as seen in FIG. 2G. A hard mask island 31 a protects a diamond film island 29 a, but other diamond film regions have been removed. Lastly, remaining islands of the hard mask are removed with KOH, as seen in FIG. 3, leaving only islands 29 a of the diamond film. These remaining islands are contact regions for electronic devices so that electrical communication may be established with the devices through the conductive diamond film islands and associated conductive traces. The traces may be diamond film made in the same way and at the same time as the islands described above.
As a modification of the above process, the [0022] substrate 25 may be abraded by buffing or polishing, perhaps ultrasonically, with diamond paste which scratches the surface of the substrate and leaves tiny diamond particles which act as seeds over the entire surface of the substrate for the formation of the diamond film layer.
The microphotograph of FIG. 4 shows the facets with a density described above, i.e. greater than 2000 per square millimeter. This will provide sufficient abrasion to an oxide or nitride surface to allow surface contact to a chip lead, without wearing away the lead. Since diamond does not oxidize, no preparation of new surfaces, such as cleaning, is necessary. The microphotograph shows the general regularity of facets, which have a grain size of between 5 and 100 square microns. The conductive diamond region is usually formed atop a conductive trace or an insulative substrate so that electricity, usually low voltage signals, is conducted through the trace and through the diamond region into and out of an electron device, particularly a surface mount device, having a terminal in intimate pressure contact with the conductive diamond region. [0023]

Claims

1. A method of making conductive regions on a substrate for receiving contacts of surface mounted semiconductor packages or devices comprising,

providing a substrate base capable of withstanding temperatures exceeding those found in a diamond film gas phase deposition reactor without deformation of the substrate base,

placing the substrate base in a heated diamond film gas phase deposition reactor,

introducing molecular hydrogen, a carbon bearing gas, and a dopant source into the reactor at a temperature conducive to the deposition of a conductive polycrystalline diamond layer on the substrate base, and

etching the polycrystalline diamond layer down to the substrate base in regions to define a desired pattern of polycrystalline diamond particles.

2. The method of claim 1 further defined by adjusting heating of the gas reactor to a temperature wherein the conductive polycrystalline diamond layer is deposited on the base with exposed pyramidal apexes having a density of at least 2000 per square millimeter.

3. The method of claim 1 wherein said desired pattern of polycrystalline diamond particles is in electrical contact with conductive traces on the substrate connecting the contact regions to electrical circuits.

4. A method of making conductive regions on a substrate for receiving contacts of surface mounted semiconductor packages or devices comprising,

forming a polycrystalline diamond layer on a substrate,

depositing a hard mask over the diamond layer,

patterning a layer of resist over the hard mask, forming protected and unprotected regions of the underlying hard mask,

etching the hard mask in the unprotected regions,

etching the diamond film layer in unprotected regions and removing remaining resist, and

etching remaining regions of the hard mask, thereby leaving diamond film islands corresponding to the protected hard mask regions.

5. The method of claim 4 wherein the diamond film island have exposed pyramidal apexes having a density of at least 2000 per square millimeter.

6. The method of claim 4 wherein the hard mask is a non-oxidizing material.

7. The method of claim 4 wherein the hard mask is an aluminum layer.

8. The method of claim 4 further defined by depositing conductive traces on the substrate prior to depositing the polycrystalline diamond layer.

9. The method of claim 4 wherein the polycrystalline diamond layer is formed by introducing molecular hydrogen, a carbon bearing gas and a dopant source into a gas phase deposition reactor having said substrate in an exposed position.

10. The method of claim 9 wherein the carbon bearing gas is an alkane.

11. The method of claim 9 wherein the carbon bearing gas is an alkane and the dopant source contains boron.

12. The method of claim 4 wherein the protected regions correspond to test terminals.

13. The method of claim 4 wherein the protected regions correspond to test terminals and conductive traces.

14. A method of making conductive regions on a substrate for receiving contacts of surface mounted semiconductor packages or devices comprising,

on a substrate, forming conductive traces terminating in contact zones,

forming a polycrystalline diamond layer on the substrate, covering said traces,

depositing a hard mask over the diamond layer,

patterning a layer of resist over the hard mask, forming protected and unprotected regions of the underlying hard mask, the protected regions being over the contact zones,

etching the hard mask in the unprotected regions,

etching remaining regions of the hard mask, thereby leaving diamond film islands, corresponding to the protected hard mask regions, over the contact zones.