US20020017835A1 - High-sensitivity flexible ceramic sensor - Google Patents
High-sensitivity flexible ceramic sensor Download PDFInfo
- Publication number
- US20020017835A1 US20020017835A1 US09/733,924 US73392400A US2002017835A1 US 20020017835 A1 US20020017835 A1 US 20020017835A1 US 73392400 A US73392400 A US 73392400A US 2002017835 A1 US2002017835 A1 US 2002017835A1
- Authority
- US
- United States
- Prior art keywords
- metal foil
- thin film
- ceramic material
- sensor
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 24
- 229910010293 ceramic material Inorganic materials 0.000 claims abstract description 24
- 239000011888 foil Substances 0.000 claims abstract description 22
- 229910052751 metal Inorganic materials 0.000 claims abstract description 22
- 239000002184 metal Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 16
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 10
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 239000011787 zinc oxide Substances 0.000 claims abstract description 5
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 claims description 4
- 239000010408 film Substances 0.000 abstract description 4
- 230000035939 shock Effects 0.000 abstract description 3
- 230000037431 insertion Effects 0.000 abstract 1
- 238000003780 insertion Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 229910052709 silver Inorganic materials 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 230000001133 acceleration Effects 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000000088 plastic resin Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/30—Piezoelectric or electrostrictive devices with mechanical input and electrical output, e.g. functioning as generators or sensors
- H10N30/302—Sensors
Definitions
- the present invention relates to a high-sensitivity flexible ceramic sensor having usefulness as an acceleration sensor for the air bag systems of automobiles and as a vibration sensor used for the measurement of high vibrational frequencies.
- ceramic sensors are widely employed as an acceleration sensor for detecting the acceleration of an automobile caused by an accidental collision in order to bring the air bag system into operation or a vibration sensor for detecting abnormal vibrations of gas turbine blades and vibrations of high-speed vehicles due to troubles in the wheels and engines.
- the present invention has an object, in view of the above described problems in the prior art ceramic sensors, to provide a novel high-sensitivity ceramic sensor having high resistance against mechanical and thermal shocks to exhibit a high sensitivity with stability.
- the high-sensitivity flexible ceramic sensor provided by the invention is an integral device which comprises:
- the metal foil and the thin film of the piezoelectric ceramic material each have a thickness in the range from 5 to 1000 ⁇ m and in the range from 0.2 to 10 ⁇ m, respectively, and the piezoelectric ceramic material is selected from the group consisting of aluminum nitride, zinc oxide and lithium niobate.
- FIG. 1 is a perspective view of the inventive ceramic sensor.
- FIG. 2 is a graph showing a response curve of an acceleration sensor as an application of the inventive ceramic sensor prepared and tested in the Example.
- FIG. 3 is a graph showing oscillating voltage changes in the steel-ball dropping test.
- FIG. 1 is a perspective view of an example of the inventive ceramic sensor which comprises a metal foil 1 and a thin film 2 of a single-crystalline piezoelectric ceramic material formed on the metal foil as the main part of the sensing element.
- the metallic material forming the metal foil 1 can be selected from a variety of metals including aluminum, copper, stainless steels, nickel, titanium, zinc, tin, lead, tungsten and the like. Silicon, which is not a metal in a strict definition, can also be used if obtained in the form of a foil.
- the metal foil 1 has a thickness in the range from 5 to 1000 ⁇ m or, preferably, from 15 to 100 ⁇ m.
- the metal foil 1 is provided on one surface with a thin film of a piezoelectric ceramic material in a single crystalline form.
- the piezoelectric ceramic material can be selected from the group consisting of aluminum nitride, zinc oxide, lithium niobate, silicon oxide, lithium tantalate, lead zirconate, lead titanate zirconate, lead titanate, barium titanate, lead niobate, strontium titanate and the like, of which aluminum nitride and zinc oxide are particularly preferable in respect of their relatively high mechanical strengths.
- the metallic material of the metal foil 1 is selected in consideration of the properties of the piezoelectric ceramic material or, in particular, the temperature of the film-forming process of the thin film of the ceramic material.
- the piezoelectric ceramic material is aluminum nitride, of which the temperature of the film-forming process can be relatively low, for example, the metallic material can be aluminum or copper having a relatively low melting point.
- the piezoelectric ceramic material is lithium niobate, of which the film-forming process is conducted at a high temperature
- the metallic material of the metal foil 1 should preferably be a stainless steel or silicon having a high melting point.
- the process of film formation of the piezoelectric ceramic material into the single-crystalline form is performed by a known method including physical film-forming methods such as the sputtering method, ion plating method, vacuum vapor deposition method, laser ablation method and the like and chemical film-forming methods such as the sol-gel method, MOCVD method and the like, of which the sputtering method is preferable because a single-crystalline thin film of the ceramic material can be formed at a relatively low temperature.
- physical film-forming methods such as the sputtering method, ion plating method, vacuum vapor deposition method, laser ablation method and the like
- chemical film-forming methods such as the sol-gel method, MOCVD method and the like, of which the sputtering method is preferable because a single-crystalline thin film of the ceramic material can be formed at a relatively low temperature.
- the single-crystalline thin film 2 of the piezo-electric ceramic material has a thickness in the range from 0.2 to 10 ⁇ m or, preferably, from 1 to 5 ⁇ m. When the thickness is too small, a sufficiently high sensitivity can hardly be obtained while, when too large, the ceramic film loses flexibility.
- an electrode 3 of a metallic material such as gold, silver, platinum, copper, aluminum and the like is formed on the single-crystalline thin film 2 of the piezoelectric ceramic material.
- the electrode 3 serves as a counterelectrode to the metal foil 1 .
- the metal foil 1 and the electrode 3 are connected by an external electric circuit 4 including an electric metering instrument 5 such as an ammeter, voltmeter and the like to serve as a detector of the voltage changes induced between the metal foil 1 and the electrode 3 by the piezoelectric effect in the thin film 2 of the piezoelectric ceramic material.
- an electric metering instrument 5 such as an ammeter, voltmeter and the like to serve as a detector of the voltage changes induced between the metal foil 1 and the electrode 3 by the piezoelectric effect in the thin film 2 of the piezoelectric ceramic material.
- a 15 mm by 30 mm wide aluminum foil of 15 ⁇ m thickness as a substrate was subjected to a sputtering treatment to form a single-crystalline thin film of aluminum nitride having a thickness of about 1 ⁇ m on one surface.
- the thus obtained composite sheet was subjected to the measurement of the mechanical properties to find that the bending strength was 1130 MPa at a strain of 0.36% while a polycrystalline sintered body of aluminum nitride had a bending strength of 392 MPa at a strain of 0.12%.
- a 0.2 ⁇ m thick silver electrode of 20 mm length and 10 mm width was formed by plating on the thin aluminum nitride film. Further, lead wires of copper were bonded by soldering to the aluminum substrate and the silver electrode and connected to a voltmeter to form an external circuit of a completed ceramic sensor. A weight of 1 kg was mounted on the thus prepared ceramic sensor with intervention of a 20 mm by 20 mm wide insulating alumina plate of 1 mm thickness and the voltage change between the aluminum substrate and the silver electrode was measured. The result is shown in FIG. 2 as a function of the time elapsed from the moment when the weight was put on the silver electrode.
Landscapes
- Measuring Fluid Pressure (AREA)
- Measurement Of Mechanical Vibrations Or Ultrasonic Waves (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Disclosed is a high-sensitivity flexible ceramic sensor for detecting mechanical shocks and vibrations, which comprises a metal foil of a specified thickness as a substrate, a single-crystalline thin film of a piezoelectric ceramic material such as aluminum nitride and zinc oxide having a specified thickness formed on the substrate, a metallic electrode formed on the thin ceramic film and an external circuit connecting the metal foil and the electrode with insertion of an electric meter for measuring the piezoelectric voltage changes induced in the ceramic thin film.
Description
- The present invention relates to a high-sensitivity flexible ceramic sensor having usefulness as an acceleration sensor for the air bag systems of automobiles and as a vibration sensor used for the measurement of high vibrational frequencies.
- As is known, ceramic sensors are widely employed as an acceleration sensor for detecting the acceleration of an automobile caused by an accidental collision in order to bring the air bag system into operation or a vibration sensor for detecting abnormal vibrations of gas turbine blades and vibrations of high-speed vehicles due to troubles in the wheels and engines.
- These ceramic sensors of which the sensing element is made from a ceramic material have a serious disadvantage in respect of mechanical strengths and heat shock resistance and are under a risk of destruction during use. As a means to alleviate this disadvantage, proposals are made to employ a sensing element made of a composite material consisting of a ceramic material and a plastic resin as a reinforcement of the ceramic material. This means, however, is necessarily accompanied by another problem due to a decrease in the sensitivity as a sensor.
- The present invention has an object, in view of the above described problems in the prior art ceramic sensors, to provide a novel high-sensitivity ceramic sensor having high resistance against mechanical and thermal shocks to exhibit a high sensitivity with stability.
- Thus, the high-sensitivity flexible ceramic sensor provided by the invention is an integral device which comprises:
- a metal foil having flexibility;
- a single-crystalline thin film of a piezoelectric ceramic material formed on one surface of the metal foil;
- an electrode formed on the surface of the thin film of the piezoelectric ceramic material; and
- an external electric circuit connecting the metal foil and the electrode.
- In particular, the metal foil and the thin film of the piezoelectric ceramic material each have a thickness in the range from 5 to 1000 μm and in the range from 0.2 to 10 μm, respectively, and the piezoelectric ceramic material is selected from the group consisting of aluminum nitride, zinc oxide and lithium niobate.
- FIG. 1 is a perspective view of the inventive ceramic sensor.
- FIG. 2 is a graph showing a response curve of an acceleration sensor as an application of the inventive ceramic sensor prepared and tested in the Example.
- FIG. 3 is a graph showing oscillating voltage changes in the steel-ball dropping test.
- In the following, the ceramic sensor of the present invention is described in more detail by making reference to the accompanying drawing.
- FIG. 1 is a perspective view of an example of the inventive ceramic sensor which comprises a
metal foil 1 and athin film 2 of a single-crystalline piezoelectric ceramic material formed on the metal foil as the main part of the sensing element. - The metallic material forming the
metal foil 1 can be selected from a variety of metals including aluminum, copper, stainless steels, nickel, titanium, zinc, tin, lead, tungsten and the like. Silicon, which is not a metal in a strict definition, can also be used if obtained in the form of a foil. Themetal foil 1 has a thickness in the range from 5 to 1000 μm or, preferably, from 15 to 100 μm. - The
metal foil 1 is provided on one surface with a thin film of a piezoelectric ceramic material in a single crystalline form. The piezoelectric ceramic material can be selected from the group consisting of aluminum nitride, zinc oxide, lithium niobate, silicon oxide, lithium tantalate, lead zirconate, lead titanate zirconate, lead titanate, barium titanate, lead niobate, strontium titanate and the like, of which aluminum nitride and zinc oxide are particularly preferable in respect of their relatively high mechanical strengths. - It is important in the present invention that the metallic material of the
metal foil 1 is selected in consideration of the properties of the piezoelectric ceramic material or, in particular, the temperature of the film-forming process of the thin film of the ceramic material. When the piezoelectric ceramic material is aluminum nitride, of which the temperature of the film-forming process can be relatively low, for example, the metallic material can be aluminum or copper having a relatively low melting point. When the piezoelectric ceramic material is lithium niobate, of which the film-forming process is conducted at a high temperature, on the other hand, the metallic material of themetal foil 1 should preferably be a stainless steel or silicon having a high melting point. - The process of film formation of the piezoelectric ceramic material into the single-crystalline form is performed by a known method including physical film-forming methods such as the sputtering method, ion plating method, vacuum vapor deposition method, laser ablation method and the like and chemical film-forming methods such as the sol-gel method, MOCVD method and the like, of which the sputtering method is preferable because a single-crystalline thin film of the ceramic material can be formed at a relatively low temperature.
- The single-crystalline
thin film 2 of the piezo-electric ceramic material has a thickness in the range from 0.2 to 10 μm or, preferably, from 1 to 5 μm. When the thickness is too small, a sufficiently high sensitivity can hardly be obtained while, when too large, the ceramic film loses flexibility. - In the next place, an
electrode 3 of a metallic material such as gold, silver, platinum, copper, aluminum and the like is formed on the single-crystallinethin film 2 of the piezoelectric ceramic material. Theelectrode 3 serves as a counterelectrode to themetal foil 1. - Thus, the
metal foil 1 and theelectrode 3 are connected by an externalelectric circuit 4 including anelectric metering instrument 5 such as an ammeter, voltmeter and the like to serve as a detector of the voltage changes induced between themetal foil 1 and theelectrode 3 by the piezoelectric effect in thethin film 2 of the piezoelectric ceramic material. - In the following, the flexible ceramic sensor of the present invention is described in more detail by way of an Example.
- A 15 mm by 30 mm wide aluminum foil of 15 μm thickness as a substrate was subjected to a sputtering treatment to form a single-crystalline thin film of aluminum nitride having a thickness of about 1 μm on one surface. The thus obtained composite sheet was subjected to the measurement of the mechanical properties to find that the bending strength was 1130 MPa at a strain of 0.36% while a polycrystalline sintered body of aluminum nitride had a bending strength of 392 MPa at a strain of 0.12%.
- In the next place, a 0.2 μm thick silver electrode of 20 mm length and 10 mm width was formed by plating on the thin aluminum nitride film. Further, lead wires of copper were bonded by soldering to the aluminum substrate and the silver electrode and connected to a voltmeter to form an external circuit of a completed ceramic sensor. A weight of 1 kg was mounted on the thus prepared ceramic sensor with intervention of a 20 mm by 20 mm wide insulating alumina plate of 1 mm thickness and the voltage change between the aluminum substrate and the silver electrode was measured. The result is shown in FIG. 2 as a function of the time elapsed from the moment when the weight was put on the silver electrode.
- Further, a steel-ball dropping test of the ceramic sensor as an acceleration sensor was undertaken. Thus, a steel ball of 14 g weight electrically connected to the silver electrode was dropped from a height of 4 cm onto the silver electrode and the response curve of the oscillating voltage changes was recorded as shown in FIG. 3. As is shown in this graph, the ceramic sensor exhibited excellent response characteristics with a response velocity of 0.05 millisecond.
Claims (4)
1. A high-sensitivity flexible ceramic sensor as an integral device which comprises:
a metal foil as a substrate;
a single-crystalline thin film of a piezoelectric ceramic material formed on one surface of the metal foil;
an electrode formed on the surface of the thin film of the piezoelectric ceramic material; and
an external electric circuit connecting the metal foil and the electrode.
2. The high-sensitivity flexible ceramic sensor as claimed in claim 1 in which the metal foil has a thickness in the range from 5 to 1000 μm.
3. The high-sensitivity flexible ceramic sensor as claimed in claim 1 in which the single-crystalline thin film of a piezoelectric ceramic material has a thickness in the range from 0.2 to 10 μm.
4. The high-sensitivity flexible ceramic sensor as claimed in claim 1 in which the piezoelectric ceramic material is selected from the group consisting of aluminum nitride, zinc oxide and lithium niobate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/237,121 US6608427B2 (en) | 2000-08-10 | 2002-09-09 | High-sensitivity flexible ceramic sensor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000-243053 | 2000-08-10 | ||
| JP2000243053A JP3706903B2 (en) | 2000-08-10 | 2000-08-10 | Flexible high sensitivity ceramic sensor |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/237,121 Continuation US6608427B2 (en) | 2000-08-10 | 2002-09-09 | High-sensitivity flexible ceramic sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| US20020017835A1 true US20020017835A1 (en) | 2002-02-14 |
Family
ID=18733970
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US09/733,924 Abandoned US20020017835A1 (en) | 2000-08-10 | 2000-12-12 | High-sensitivity flexible ceramic sensor |
| US10/237,121 Expired - Fee Related US6608427B2 (en) | 2000-08-10 | 2002-09-09 | High-sensitivity flexible ceramic sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US10/237,121 Expired - Fee Related US6608427B2 (en) | 2000-08-10 | 2002-09-09 | High-sensitivity flexible ceramic sensor |
Country Status (2)
| Country | Link |
|---|---|
| US (2) | US20020017835A1 (en) |
| JP (1) | JP3706903B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030075936A1 (en) * | 2001-10-19 | 2003-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer blade equipped with piezoelectric sensors |
| US20150323302A1 (en) * | 2014-05-06 | 2015-11-12 | National Sun Yat-Sen University | Flexible Strain Sensor, Method for Producing Same, and Measuring Device Including Same |
| CN108775956A (en) * | 2018-05-24 | 2018-11-09 | 北京科技大学 | A kind of wireless vibration cantilever beam sensor based on piezoelectricity |
| CN112864305A (en) * | 2020-12-24 | 2021-05-28 | 广东奥迪威传感科技股份有限公司 | Piezoelectric actuator |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1340970A4 (en) * | 2000-11-06 | 2007-06-27 | Jtekt Corp | Mechanical quantity sensor element, load sensor element, acceleration sensor element, and pressure sensor element |
| US7312674B2 (en) * | 2002-08-06 | 2007-12-25 | The Charles Stark Draper Laboratory, Inc. | Resonator system with a plurality of individual mechanically coupled resonators and method of making same |
| CN100566152C (en) * | 2002-09-12 | 2009-12-02 | Nxp股份有限公司 | Has the bulk acoustic wave resonator that suppresses the device of passband ripple in the bulk accoustic wave filter |
| US7538401B2 (en) | 2005-05-03 | 2009-05-26 | Rosemount Aerospace Inc. | Transducer for use in harsh environments |
| US7628309B1 (en) | 2005-05-03 | 2009-12-08 | Rosemount Aerospace Inc. | Transient liquid phase eutectic bonding |
| JP4888004B2 (en) * | 2006-09-26 | 2012-02-29 | 富士通株式会社 | Strain sensor |
| DE102013206933A1 (en) * | 2013-04-17 | 2014-10-23 | Continental Automotive Gmbh | Modular actuator unit for an injection valve |
| CN109211428A (en) * | 2018-08-21 | 2019-01-15 | 北京印刷学院 | temperature sensor and preparation method |
| JP7639309B2 (en) * | 2020-11-25 | 2025-03-05 | セイコーエプソン株式会社 | Method for detecting abnormality in piezoelectric driving device, piezoelectric driving device, and robot |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4067019A (en) | 1976-06-14 | 1978-01-03 | International Business Machines Corporation | Impact position transducer for ink jet |
| JPS5932733B2 (en) * | 1979-07-02 | 1984-08-10 | 三菱電機株式会社 | acceleration detector |
| US4835435A (en) | 1988-01-19 | 1989-05-30 | Hewlett-Packard Company | Simple, sensitive, frequency-tuned drop detector |
| US5336959A (en) | 1988-12-16 | 1994-08-09 | The Whitaker Corporation | Impact zone detection device |
| DE4120681A1 (en) | 1990-08-04 | 1992-02-06 | Bosch Gmbh Robert | ULTRASONIC CONVERTER |
| US5185589A (en) | 1991-05-17 | 1993-02-09 | Westinghouse Electric Corp. | Microwave film bulk acoustic resonator and manifolded filter bank |
| JPH05177831A (en) | 1991-12-27 | 1993-07-20 | Rohm Co Ltd | Ink jet printing head and electronic device equipped therewith |
| US5424716A (en) | 1992-10-06 | 1995-06-13 | The Whitaker Corporation | Penetration detection system |
| US5520785A (en) * | 1994-01-04 | 1996-05-28 | Motorola, Inc. | Method for enhancing aluminum nitride |
| JP3323343B2 (en) | 1994-04-01 | 2002-09-09 | 日本碍子株式会社 | Sensor element and particle sensor |
| JPH08148968A (en) | 1994-11-24 | 1996-06-07 | Mitsubishi Electric Corp | Thin film piezoelectric element |
| JP2826078B2 (en) * | 1995-04-07 | 1998-11-18 | 日本碍子株式会社 | Piezoelectric / electrostrictive film type actuator |
| JPH09260735A (en) * | 1996-03-26 | 1997-10-03 | Nippon Soken Inc | Thin-film piezoelectric element |
| JP3267151B2 (en) | 1996-04-12 | 2002-03-18 | ミノルタ株式会社 | Piezoelectric vibrating member and method of manufacturing the same |
| JP3123435B2 (en) | 1996-07-29 | 2001-01-09 | 株式会社村田製作所 | Piezoelectric acoustic transducer |
| JP3233041B2 (en) * | 1996-08-13 | 2001-11-26 | 株式会社村田製作所 | Piezoelectric acoustic transducer |
| JP2909532B2 (en) * | 1996-10-21 | 1999-06-23 | 工業技術院長 | High temperature thin film vibration sensor |
| JPH10249768A (en) * | 1997-03-12 | 1998-09-22 | Tokai Rubber Ind Ltd | Force sensor |
| JPH10260090A (en) * | 1997-03-18 | 1998-09-29 | Ube Ind Ltd | Strain sensor for membrane structures |
| JPH10270766A (en) * | 1997-03-25 | 1998-10-09 | Osaka Gas Co Ltd | Ferroelectric thin film element, piezoelectric element and method of manufacturing the same |
| JPH1130628A (en) * | 1997-07-11 | 1999-02-02 | Matsushita Electric Ind Co Ltd | Bimorph type piezoelectric element for acceleration sensor and method of manufacturing the same |
| JPH1151957A (en) * | 1997-08-08 | 1999-02-26 | Nikon Corp | Impact sensor, impact detection device using the same, and method of manufacturing impact sensor |
| JPH11211748A (en) * | 1998-01-20 | 1999-08-06 | Matsushita Electric Ind Co Ltd | Electromechanical transducer, method of manufacturing the same, and acceleration sensor |
| JPH11337422A (en) * | 1998-05-29 | 1999-12-10 | Tokai Rubber Ind Ltd | Composite oxide thin film, united, body of the thin film and its formation, sensor using the united body |
| AU1128600A (en) * | 1998-11-20 | 2000-06-13 | Joie P. Jones | Methods for selectively dissolving and removing materials using ultra-high frequency ultrasound |
| JP2000171480A (en) * | 1998-12-04 | 2000-06-23 | Matsushita Electric Ind Co Ltd | Piezoelectric sensor element, acceleration detection device, and acceleration detection method |
-
2000
- 2000-08-10 JP JP2000243053A patent/JP3706903B2/en not_active Expired - Lifetime
- 2000-12-12 US US09/733,924 patent/US20020017835A1/en not_active Abandoned
-
2002
- 2002-09-09 US US10/237,121 patent/US6608427B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030075936A1 (en) * | 2001-10-19 | 2003-04-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Wafer blade equipped with piezoelectric sensors |
| US20150323302A1 (en) * | 2014-05-06 | 2015-11-12 | National Sun Yat-Sen University | Flexible Strain Sensor, Method for Producing Same, and Measuring Device Including Same |
| TWI561217B (en) * | 2014-05-06 | 2016-12-11 | Univ Nat Sun Yat Sen | Flexible strain sensor, and measuring device with said flexible strain sensor |
| CN108775956A (en) * | 2018-05-24 | 2018-11-09 | 北京科技大学 | A kind of wireless vibration cantilever beam sensor based on piezoelectricity |
| CN112864305A (en) * | 2020-12-24 | 2021-05-28 | 广东奥迪威传感科技股份有限公司 | Piezoelectric actuator |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3706903B2 (en) | 2005-10-19 |
| US6608427B2 (en) | 2003-08-19 |
| US20030006678A1 (en) | 2003-01-09 |
| JP2002055116A (en) | 2002-02-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6608427B2 (en) | High-sensitivity flexible ceramic sensor | |
| US5679888A (en) | Dynamic quantity sensor and method for producing the same, distortion resistance element and method for producing the same, and angular velocity sensor | |
| EP0139495B1 (en) | Piezoelectric resonator force transducer | |
| US6098460A (en) | Acceleration sensor and shock detecting device using the same | |
| US4443729A (en) | Piezoceramic bender element having an electrode arrangement suppressing signal development in mount region | |
| EP2144309B1 (en) | Piezoelectric device and its manufacturing method | |
| CN108172682B (en) | Piezoelectric thin film laminate, piezoelectric thin film substrate, and piezoelectric thin film element | |
| US7126255B2 (en) | Piezoelectric/electrostrictive film-type device | |
| JP2003502617A (en) | Sensor device for measuring physical properties of liquids | |
| US7278313B2 (en) | Structures for supporting vibrators and devices for measuring physical quantities | |
| JP3248606B2 (en) | Mechanical quantity sensor, strain resistance element, and method of manufacturing the same | |
| EP0511762B1 (en) | Piezoelectric sensor | |
| CN115768994A (en) | Force sensing device, vehicle braking device including such a force sensing device, and production method thereof | |
| RU180725U1 (en) | HIGH TEMPERATURE MASS-SENSITIVE ELEMENT FOR Piezoresonance sensors | |
| EP0694785B1 (en) | Acceleration sensor | |
| JP4488209B2 (en) | Internal combustion engine knock sensor | |
| JP3368744B2 (en) | Vibration acceleration sensor | |
| JP2005537491A5 (en) | ||
| JPH1096742A (en) | Acceleration sensor, method of manufacturing the same, and shock detection device using acceleration sensor | |
| JP5256423B2 (en) | Pressure sensor element and pressure sensor | |
| JPH06249706A (en) | Piezoelectric oscillation sensor | |
| JP2749158B2 (en) | Adhesive capacitance strain gauge | |
| JPH10260090A (en) | Strain sensor for membrane structures | |
| RU2484483C1 (en) | Manufacturing method of nano-electromechanical converter, and nano-electromechanical converter with autoelectronic emission | |
| JPS5856804B2 (en) | Handout Thai Hizumi Keisoshi no Kochiyaku Hohou |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AS | Assignment |
Owner name: JAPAN AS REPRESENTED BY SECRETARY OF AGENCY OF IND Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:AKIYAMA, MORITO;UENO, NAOHIRO;IKEDA, KIICHI;AND OTHERS;REEL/FRAME:011361/0907;SIGNING DATES FROM 20001102 TO 20001113 |
|
| STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |