US20010023166A1 - Wafer carrier rinsing mechanism - Google Patents
Wafer carrier rinsing mechanism Download PDFInfo
- Publication number
- US20010023166A1 US20010023166A1 US09/858,413 US85841301A US2001023166A1 US 20010023166 A1 US20010023166 A1 US 20010023166A1 US 85841301 A US85841301 A US 85841301A US 2001023166 A1 US2001023166 A1 US 2001023166A1
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- Prior art keywords
- wafer
- carrier
- nozzles
- nozzle
- spray
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- Abandoned
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- 239000007921 spray Substances 0.000 claims abstract description 27
- 239000012530 fluid Substances 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 4
- 239000000463 material Substances 0.000 claims description 17
- 238000005498 polishing Methods 0.000 claims description 11
- 238000005507 spraying Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 238000007517 polishing process Methods 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- 238000012864 cross contamination Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/34—Accessories
Definitions
- the present invention relates generally to multi-step chemical mechanical polishing processes and, more particularly, to a wafer carrier rinsing mechanism.
- CMP Chemical-mechanical polishing
- a polishing pad mounted to a polishing table or platen, which is held in contact with the surface of the semiconductor wafer via a carrier.
- An abrasive slurry typically water-based, is applied to the surface of the polishing pad to facilitate and enhance polishing of the wafer.
- both the polishing pad and wafer are rotated relative to one another. As a result, unwanted material is removed from the surface of the wafer, producing a planarized surface.
- the wafer can be transported to a subsequent processing step, e.g., a secondary polishing operation, or a cleaning process.
- the present invention provides an apparatus for removing foreign materials from a semiconductor wafer and wafer carrier that holds the wafer in place.
- the apparatus comprises a washer assembly having a plurality of propositioned nozzles for ejecting a fluid against a surface of the wafer while the carrier is rotating in order to cleanse either/both the wafer surface and the wafer carrier.
- the washer assembly may include a first plurality of nozzles positioned for spraying a leading edge of the wafer surface, a second plurality of nozzles positioned for spraying a trailing edge of the wafer surface, and a third plurality of nozzles positioned outwardly (i.e., away from the center of the wafer) for forcing foreign materials towards an edge of the wafer surface.
- the washer assembly may also, for example, include nozzles that are positioned to both spray a leading edge of the wafer and force foreign materials towards an edge of the wafer, or alternatively, positioned to spray a trailing edge and force foreign materials towards an edge of the wafer.
- each nozzles can be altered to control the spray pattern associated with the nozzle.
- FIG. 1 depicts a side view of a carrier rinse system and carrier in accordance with a preferred embodiment of the present invention
- FIG. 2 depicts an isometric view of a carrier rinse mechanism in accordance with a preferred embodiment of the present invention
- FIG. 3 depicts a top view of a carrier rinse mechanism in accordance with a preferred embodiment of the present invention
- FIG. 4 depicts a side view taken along section 4 - 4 of the carrier rinse system of FIG. 3, in accordance with a preferred embodiment of the present invention
- FIG. 5 depicts a cross-sectional side view taken along section 5 - 5 of FIG. 3 in accordance with a preferred embodiment of the present invention
- FIG. 6 depicts a cross-sectional side view of section 6 - 6 of FIG. 3 in accordance with a preferred embodiment of the present invention.
- FIG. 7 depicts a nozzle in accordance with a preferred embodiment of the present invention.
- FIG. 1 depicts a wafer carrier 12 being sprayed by a rinse unit 10 in accordance with the present invention.
- Wafer carrier 12 includes a wafer holder 14 and wafer 16 that can be rotated in the direction of arrow 15 .
- Wafer carrier 12 can be any type known in the art, including a WESTECHTM carrier.
- Rinse unit 10 comprises a plurality of nozzles 18 positioned to spray a fluid 19 towards wafer 16 as the wafer 16 is rotated by the wafer carrier 12 .
- Fluid 19 is pumped from a fluid source 20 into the rinse unit 10 for disbursement through the nozzles 18 .
- the rinse unit 10 could be used to cleanse the wafer carrier 12 and wafer 16 after/before any of the steps commonly utilized in a CMP process.
- the wafer 16 could be rinsed off with the rinse unit 10 in order to reduce the amount of chemical cross-contamination.
- the rinse unit 10 could be used to cleanse wafer holder 14 before the wafer 16 is placed onto the wafer holder 14 in order to ensure a contaminate free surface.
- the rinse unit 10 could be used after the polishing process and prior to the cleaning process, or at any other stage where the elimination of residual foreign materials is desired.
- nozzles 18 can be altered without departing from the scope of this invention. Moreover, it is envisioned that the invention could be implemented in such a manner where wafer carrier 12 could remain stationary, while the rinse unit 10 is spun around.
- the rinse unit 10 comprises four nozzle banks 24 , 26 , 28 and 30 . Each of the banks comprises a plurality of nozzles 32 for ejecting a spray in a direction toward the wafer carrier and wafer (not shown).
- the rinse unit 10 includes a base portion 34 and a plate 36 . The plate 36 is secured to the base portion 34 with screws 38 and holds the nozzles 32 in position.
- the rinse unit 10 is mounted on top of posts 40 and 42 , which are hollowed-out to provide passage of fluid into the rinse unit 10 .
- the rinse unit 10 may be mounted on a flat surface 46 with nozzles pointed generally upward, or any other suitable configuration (e.g., horizontally or downward).
- the rinse unit 10 comprises hollowed out passageways (not shown) for delivering fluid to each of the nozzles 32 .
- the rinse unit 10 may include plugs 44 at the end of each nozzle bank to provide access or closure to the hollowed-out passageways.
- the rinse unit 10 may be made from any type of material, including plastic or metal, that can provide a system for mounting nozzles and delivering a fluid.
- FIG. 3 a top view of the rinse unit 10 is depicted.
- the four nozzle banks 24 , 26 , 28 and 30 are arranged in an x-shape. While this embodiment depicts banks of nozzles in an x-shape including four nozzle banks, it is understood that any nozzle layout falls within the scope of this invention.
- Each nozzle bank comprises a plurality of nozzles 32 . As the wafer (not shown) is rotated above the rinse unit 10 , fluid will be pumped into each nozzle bank 24 , 26 , 28 and 30 and through each of the nozzles 32 to remove foreign material from the wafer.
- Each of the nozzles 32 may be angled in a predetermined direction to control the spray angle.
- the nozzles 32 can be angled to spray toward both a leading edge of the wafer as it approaches and towards an outside edge of the wafer. Similarly, the nozzles can be angled to spray towards a trailing edge and towards an outside edge of the wafer. In general, each of the nozzles 32 within a given bank of nozzles will be angled to spray in a similar direction, e.g., to spray towards a leading edge in a non-overlapping manner. Some of the various nozzle angles achievable with this invention are further described in FIGS. 4 - 6 .
- Nozzle bank 30 comprises a plurality of nozzles receptors 50 that are oriented in a generally vertical direction in order to produce a vertical spray direction.
- nozzle receptors 52 are angled outward towards the edge of the wafer (not shown) such that as the wafer rotates foreign material is forced towards an edge of the wafer surface.
- passageway 48 which is used to deliver fluid to each of the nozzle receptors 50 , 52 .
- Each of the nozzle receptors includes means, such as threaded side walls, for receiving a nozzle. Alternatively, the nozzles could be integrated into the nozzle bank as a one-piece system.
- FIG. 5 a cross-sectional side view taken along section 5 - 5 of FIG. 3 is depicted.
- the nozzle receptor 54 is angularly offset to the right when viewed from the center of the rinse unit, thereby providing a spray direction suitable for spraying a leading edge of the wafer as the wafer rotates (assuming a counter-clockwise rotation).
- FIG. 6 depicts a cross-section of section 6 - 6 of FIG. 3 having a nozzle receptor 56 that is angled in a left direction when viewed from the center of the rinse unit in order to provide a spray direction suitable for spraying a trailing edge of the wafer as it rotates (assuming a counter-clockwise rotation).
- the spray pattern achievable by each nozzle may likewise be altered.
- a nozzle 58 with an aperture 60 is depicted having threading 62 for mounting into a nozzle receptor. Because of the elongated shape of the aperture 60 on nozzle 58 , a wide, fanned-out type spray pattern would be produced. Thus, the user can vary the direction of the spray pattern by turning the nozzle 58 to a desired position. For example, the elongated spray pattern could be directed in more of an up/down pattern, or more of a left/right pattern. Moreover, the user can choose among different types of nozzles (not shown) to produce a desired spray pattern (e.g., fine, circular, etc.).
- the nozzles can be locked into position by screwing down plate 36 on top of the base 34 (see FIG. 2). It is understood that any system for securing the nozzles in place (e.g., screw, clamp, etc.) could likewise be used.
- the present invention provides enhanced spray control by allowing the user to choose: (1) the angle of the nozzle receptor, and hence the angle of the nozzle; (2) the type of nozzle, and hence the particular spray pattern; and (3) the nozzle direction.
- a full coverage carrier rinse unit is provided to clean a wafer insitu and carrier after each step in a multi-step CMP process. It is estimated that the rinse unit could operate at any pressure, but preferably will operate between 70 and 120 PSI's. While this invention has been described in conjunction with the specific embodiments outlined above, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the preferred embodiments of the invention set forth above are intended to be illustrative, not limiting. Various changes may be made without departing from the spirit and scope of the invention as defined in the following claims.
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
A carrier rinse unit comprising a plurality of nozzles prepositioned to eject a cleaning fluid against a surface of a wafer while the wafer is rotated within a wafer carrier. The prepositioned nozzles may be angled to spray a leading edge, a trailing edge, an outer edge of the wafer, or any desired point on the surface of the wafer.
Description
- 1. Technical Field
- The present invention relates generally to multi-step chemical mechanical polishing processes and, more particularly, to a wafer carrier rinsing mechanism.
- 2. Related Art
- Chemical-mechanical polishing (hereinafter “CMP”), is a common method of planarization used in semiconductor manufacture. CMP typically involves the use of a circular polishing pad, mounted to a polishing table or platen, which is held in contact with the surface of the semiconductor wafer via a carrier. An abrasive slurry, typically water-based, is applied to the surface of the polishing pad to facilitate and enhance polishing of the wafer. During a polishing process, both the polishing pad and wafer are rotated relative to one another. As a result, unwanted material is removed from the surface of the wafer, producing a planarized surface. Once complete, the wafer can be transported to a subsequent processing step, e.g., a secondary polishing operation, or a cleaning process.
- However, after a polishing operation, residual foreign materials tend to remain on the surface of the polished wafer, which in turn can lead to cross contamination with subsequent processing steps. Because each subsequent processing step can be adversely affected by residual foreign materials from a previous step, failure to adequately reduce such contamination can lead to higher costs. Furthermore, eliminating the cross contamination is becoming more and more vital as the level of precision required for higher integrated circuit (IC) device densities increases. Accordingly, a need exists for improved tools for eliminating cross contamination in CMP processing.
- The present invention provides an apparatus for removing foreign materials from a semiconductor wafer and wafer carrier that holds the wafer in place. The apparatus comprises a washer assembly having a plurality of propositioned nozzles for ejecting a fluid against a surface of the wafer while the carrier is rotating in order to cleanse either/both the wafer surface and the wafer carrier. The washer assembly may include a first plurality of nozzles positioned for spraying a leading edge of the wafer surface, a second plurality of nozzles positioned for spraying a trailing edge of the wafer surface, and a third plurality of nozzles positioned outwardly (i.e., away from the center of the wafer) for forcing foreign materials towards an edge of the wafer surface. The washer assembly may also, for example, include nozzles that are positioned to both spray a leading edge of the wafer and force foreign materials towards an edge of the wafer, or alternatively, positioned to spray a trailing edge and force foreign materials towards an edge of the wafer. In addition, each nozzles can be altered to control the spray pattern associated with the nozzle.
- FIG. 1 depicts a side view of a carrier rinse system and carrier in accordance with a preferred embodiment of the present invention;
- FIG. 2 depicts an isometric view of a carrier rinse mechanism in accordance with a preferred embodiment of the present invention;
- FIG. 3 depicts a top view of a carrier rinse mechanism in accordance with a preferred embodiment of the present invention;
- FIG. 4 depicts a side view taken along section4-4 of the carrier rinse system of FIG. 3, in accordance with a preferred embodiment of the present invention;
- FIG. 5 depicts a cross-sectional side view taken along section5-5 of FIG. 3 in accordance with a preferred embodiment of the present invention;
- FIG. 6 depicts a cross-sectional side view of section6-6 of FIG. 3 in accordance with a preferred embodiment of the present invention; and
- FIG. 7 depicts a nozzle in accordance with a preferred embodiment of the present invention.
- Referring now to the figures, FIG. 1 depicts a
wafer carrier 12 being sprayed by arinse unit 10 in accordance with the present invention.Wafer carrier 12 includes a wafer holder 14 andwafer 16 that can be rotated in the direction ofarrow 15.Wafer carrier 12 can be any type known in the art, including a WESTECH™ carrier.Rinse unit 10 comprises a plurality of nozzles 18 positioned to spray afluid 19 towardswafer 16 as thewafer 16 is rotated by thewafer carrier 12.Fluid 19 is pumped from afluid source 20 into therinse unit 10 for disbursement through the nozzles 18. - It is envisioned that the
rinse unit 10 could be used to cleanse thewafer carrier 12 and wafer 16 after/before any of the steps commonly utilized in a CMP process. For example, in between a primary and secondary polishing operation, thewafer 16 could be rinsed off with therinse unit 10 in order to reduce the amount of chemical cross-contamination. In addition, therinse unit 10 could be used to cleanse wafer holder 14 before thewafer 16 is placed onto the wafer holder 14 in order to ensure a contaminate free surface. Furthermore, therinse unit 10 could be used after the polishing process and prior to the cleaning process, or at any other stage where the elimination of residual foreign materials is desired. - It should be further recognized that the exact placement and configuration of nozzles18 can be altered without departing from the scope of this invention. Moreover, it is envisioned that the invention could be implemented in such a manner where
wafer carrier 12 could remain stationary, while therinse unit 10 is spun around. - Referring now to FIG. 2, an isometric view of the
rinse unit 10 is depicted. Therinse unit 10 comprises fournozzle banks nozzles 32 for ejecting a spray in a direction toward the wafer carrier and wafer (not shown). Therinse unit 10 includes abase portion 34 and aplate 36. Theplate 36 is secured to thebase portion 34 withscrews 38 and holds thenozzles 32 in position. Therinse unit 10 is mounted on top ofposts rinse unit 10. Therinse unit 10 may be mounted on aflat surface 46 with nozzles pointed generally upward, or any other suitable configuration (e.g., horizontally or downward). Therinse unit 10 comprises hollowed out passageways (not shown) for delivering fluid to each of thenozzles 32. Therinse unit 10 may includeplugs 44 at the end of each nozzle bank to provide access or closure to the hollowed-out passageways. Therinse unit 10 may be made from any type of material, including plastic or metal, that can provide a system for mounting nozzles and delivering a fluid. - Referring now to FIG. 3, a top view of the
rinse unit 10 is depicted. As can be seen, the fournozzle banks nozzles 32. As the wafer (not shown) is rotated above therinse unit 10, fluid will be pumped into eachnozzle bank nozzles 32 to remove foreign material from the wafer. Each of thenozzles 32 may be angled in a predetermined direction to control the spray angle. Thenozzles 32 may be fixed (e.g., machined) to a predetermined angle, or be positionable (e.g., using bearings, etc.) by the user. Thus, the fluid being ejected from eachnozzle 32 in therinse unit 10 may be directed straight up, angled in a first direction for spraying a leading edge of the wafer surface as it passes the nozzle, angled in a second direction for spraying a trailing edge of the wafer surface as it passes the nozzle, or angled outward to force foreign material towards the edge of the wafer. In addition, the nozzles can be angled in a combination of directions to achieve a device result. For example, thenozzles 32 can be angled to spray toward both a leading edge of the wafer as it approaches and towards an outside edge of the wafer. Similarly, the nozzles can be angled to spray towards a trailing edge and towards an outside edge of the wafer. In general, each of thenozzles 32 within a given bank of nozzles will be angled to spray in a similar direction, e.g., to spray towards a leading edge in a non-overlapping manner. Some of the various nozzle angles achievable with this invention are further described in FIGS. 4-6. - Referring to FIG. 4, a cross-sectional side view taken along section4-4 of FIG. 3 is depicted showing
nozzle banks Nozzle bank 30 comprises a plurality ofnozzles receptors 50 that are oriented in a generally vertical direction in order to produce a vertical spray direction. In contrast,nozzle receptors 52 are angled outward towards the edge of the wafer (not shown) such that as the wafer rotates foreign material is forced towards an edge of the wafer surface. Also shown in FIG. 4 ispassageway 48 which is used to deliver fluid to each of thenozzle receptors - Referring now to FIG. 5, a cross-sectional side view taken along section5-5 of FIG. 3 is depicted. Here it can be seen that the
nozzle receptor 54 is angularly offset to the right when viewed from the center of the rinse unit, thereby providing a spray direction suitable for spraying a leading edge of the wafer as the wafer rotates (assuming a counter-clockwise rotation). FIG. 6 depicts a cross-section of section 6-6 of FIG. 3 having anozzle receptor 56 that is angled in a left direction when viewed from the center of the rinse unit in order to provide a spray direction suitable for spraying a trailing edge of the wafer as it rotates (assuming a counter-clockwise rotation). - In addition to controlling the nozzle angle, the spray pattern achievable by each nozzle may likewise be altered. Referring to FIG. 7, a
nozzle 58 with anaperture 60 is depicted having threading 62 for mounting into a nozzle receptor. Because of the elongated shape of theaperture 60 onnozzle 58, a wide, fanned-out type spray pattern would be produced. Thus, the user can vary the direction of the spray pattern by turning thenozzle 58 to a desired position. For example, the elongated spray pattern could be directed in more of an up/down pattern, or more of a left/right pattern. Moreover, the user can choose among different types of nozzles (not shown) to produce a desired spray pattern (e.g., fine, circular, etc.). Once all of the desired nozzles are installed and a direction for each nozzle is chosen, the nozzles can be locked into position by screwing downplate 36 on top of the base 34 (see FIG. 2). It is understood that any system for securing the nozzles in place (e.g., screw, clamp, etc.) could likewise be used. - Thus, the present invention provides enhanced spray control by allowing the user to choose: (1) the angle of the nozzle receptor, and hence the angle of the nozzle; (2) the type of nozzle, and hence the particular spray pattern; and (3) the nozzle direction.
- With this invention, a full coverage carrier rinse unit is provided to clean a wafer insitu and carrier after each step in a multi-step CMP process. It is estimated that the rinse unit could operate at any pressure, but preferably will operate between 70 and 120 PSI's. While this invention has been described in conjunction with the specific embodiments outlined above, it is evident that many alternatives, modifications and variations will be apparent to those skilled in the art. Accordingly, the preferred embodiments of the invention set forth above are intended to be illustrative, not limiting. Various changes may be made without departing from the spirit and scope of the invention as defined in the following claims.
Claims (14)
1. An apparatus for removing foreign materials from a semiconductor wafer during a polishing process, comprising:
a rotatable wafer carrier for holding the wafer in place; and
a washer assembly having a plurality of prepositioned nozzles for ejecting a fluid against a surface of the wafer while the carrier is rotating in order to cleanse the surface.
2. The apparatus of , wherein the prepositioned nozzles comprise a first set of nozzles positioned for spraying a leading edge of the wafer surface.
claim 1
3. The apparatus of , wherein the prepositioned nozzles comprise a second set of nozzles positioned for spraying a trailing edge of the wafer surface.
claim 2
4. The apparatus of , wherein the prepositioned nozzles are grouped into a plurality of nozzle banks extending outward from a center point.
claim 1
5. The apparatus of , wherein the prepositioned nozzles are oriented outward in order to force foreign materials towards an edge of the wafer surface.
claim 1
6. The apparatus of , wherein each prepositioned nozzle generates a unique spray pattern such that the fluid from any two nozzles do not interfere with each other.
claim 1
7. The apparatus of , wherein the prepositioned nozzles include a center nozzle that ejects fluid straight up.
claim 1
8. A carrier rinse mechanism for cleaning a wafer supported by a wafer carrier, comprising:
a first plurality of nozzle banks for ejecting fluid toward a surface of the wafer, wherein said first plurality of nozzle banks are angled in a first direction to spray a leading edge of the wafer surface; and
a second plurality of nozzle banks for ejecting fluid toward a surface of the wafer, wherein said first plurality of nozzle banks are angled in a second direction to spray a trailing edge of the wafer surface.
9. The carrier rinse mechanism of , wherein a third plurality of nozzle banks are angled outward to in order to force foreign materials towards an edge of the wafer surface.
claim 8
10. The carrier rinse mechanism of , wherein a fourth plurality of nozzle banks eject their fluid in a generally upward direction.
claim 8
11. A method for removing foreign materials from a wafer during a chemical mechanical polishing process, comprising the steps of:
securing the wafer in a wafer carrier;
positioning the wafer carrier proximate a polishing mechanism;
polishing a surface of the wafer for a predetermined time;
moving the wafer carrier proximate a carrier rinse unit;
rotating the wafer relative to a carrier rinse unit; and
spraying the wafer with a fluid from the carrier rinse unit, wherein the unit includes a first plurality of nozzle banks angled in a first direction to spray a leading edge of the wafer surface as the wafer rotates.
12. The method of , wherein the carrier rinse unit comprises a second plurality of nozzle banks angled in a second direction to spray a trailing edge of the wafer surface.
claim 11
13. The method of , wherein the carrier rinse unit comprises a third plurality of nozzle banks angled in an outward direction to spray the foreign material off an edge of the wafer.
claim 11
14. The method of , further comprising the steps, prior to the securing step, of:
claim 11
moving the wafer carrier proximate the carrier rinse unit; and
spraying the carrier with a fluid from the rinse unit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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US09/858,413 US20010023166A1 (en) | 1999-07-20 | 2001-05-16 | Wafer carrier rinsing mechanism |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US09/357,252 US6287178B1 (en) | 1999-07-20 | 1999-07-20 | Wafer carrier rinsing mechanism |
US09/858,413 US20010023166A1 (en) | 1999-07-20 | 2001-05-16 | Wafer carrier rinsing mechanism |
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US09/357,252 Division US6287178B1 (en) | 1999-07-20 | 1999-07-20 | Wafer carrier rinsing mechanism |
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US20010023166A1 true US20010023166A1 (en) | 2001-09-20 |
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US09/357,252 Expired - Fee Related US6287178B1 (en) | 1999-07-20 | 1999-07-20 | Wafer carrier rinsing mechanism |
US09/858,413 Abandoned US20010023166A1 (en) | 1999-07-20 | 2001-05-16 | Wafer carrier rinsing mechanism |
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US09/357,252 Expired - Fee Related US6287178B1 (en) | 1999-07-20 | 1999-07-20 | Wafer carrier rinsing mechanism |
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JP2654314B2 (en) * | 1992-06-04 | 1997-09-17 | 東京応化工業株式会社 | Backside cleaning device |
US5655954A (en) * | 1994-11-29 | 1997-08-12 | Toshiba Kikai Kabushiki Kaisha | Polishing apparatus |
US5804507A (en) | 1995-10-27 | 1998-09-08 | Applied Materials, Inc. | Radially oscillating carousel processing system for chemical mechanical polishing |
US5779816A (en) * | 1997-01-30 | 1998-07-14 | Trinh; Tieu T. | Nozzle and system for use in wafer cleaning procedures |
-
1999
- 1999-07-20 US US09/357,252 patent/US6287178B1/en not_active Expired - Fee Related
-
2001
- 2001-05-16 US US09/858,413 patent/US20010023166A1/en not_active Abandoned
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US20120040817A1 (en) * | 2010-08-11 | 2012-02-16 | Won-Jae Moon | Float bath for manufacturing float glass and cooling method of the same |
US8297078B2 (en) * | 2010-08-11 | 2012-10-30 | Lg Chem, Ltd. | Float bath for manufacturing float glass having a cooling device |
US20120040818A1 (en) * | 2010-08-12 | 2012-02-16 | Won-Jae Moon | Float bath for manufacturing float glass and cooling method of the same |
US8863554B2 (en) * | 2010-08-12 | 2014-10-21 | Lg Chem, Ltd. | Float bath for manufacturing float glass and cooling method of the same |
US20120160275A1 (en) * | 2010-12-28 | 2012-06-28 | Tokyo Electron Limited | Liquid treatment apparatus and method |
US20120160278A1 (en) * | 2010-12-28 | 2012-06-28 | Tokyo Electron Limited | Liquid treatment apparatus and method |
CN102553851A (en) * | 2010-12-28 | 2012-07-11 | 东京毅力科创株式会社 | Liquid treatment device and liquid treatment method |
US9022045B2 (en) * | 2010-12-28 | 2015-05-05 | Tokyo Electron Limited | Substrate liquid cleaning apparatus with controlled liquid port ejection angle |
US9048269B2 (en) * | 2010-12-28 | 2015-06-02 | Tokyo Electron Limited | Substrate liquid treatment apparatus with lift pin plate |
CN107195532A (en) * | 2016-03-14 | 2017-09-22 | 东芝存储器株式会社 | Semiconductor making method |
CN107195532B (en) * | 2016-03-14 | 2020-09-18 | 东芝存储器株式会社 | Semiconductor manufacturing method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |