US20010013626A1

US20010013626A1 - Semiconductor device

Info

Publication number: US20010013626A1
Application number: US09/781,252
Authority: US
Inventors: Hiroki Fujii
Original assignee: Individual
Current assignee: Adeia Semiconductor Advanced Technologies Inc
Priority date: 2000-02-14
Filing date: 2001-02-13
Publication date: 2001-08-16
Anticipated expiration: 2021-02-13
Also published as: JP2001230375A; US6437409B2; EP1128416A2; JP3488164B2

Abstract

The first shield pattern is provided between an inductor and the surface of a semiconductor substrate under the inductor. The first shield pattern has plural concave slittings from the side of the edge toward the inside. The second shield pattern provides a convex area which is located on the surface of the semiconductor substrate in correspondence with the slitting wherein metallic silicide is formed and a connection area which is provided on the surface of the semiconductor substrate and in which metallic silicide is formed for connecting plural convex areas.

Description

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device, particularly but not limited to a semiconductor device having a MOS transistor and an inductor.

2. Description of the Related Art

An important characteristic of high frequency semiconductor device is to enhance the noise characteristics of the high frequency circuit by reducing noise caused in the substrate. As an inductor occupies a large area, in comparison to other circuit element, high frequency current flows in the substrate by coupling a wiring layer pattern composing the inductor and the substrate immediately under the inductor, thus causing noise in the substrate due to the resistance of the substrate. The noise has a negative effect upon the characteristics of the high frequency circuit. To reduce the noise in the substrate, the method of the present invention provides a conductive layer made of a metallic silicide layer placed between an inductor pattern and a silicon substrate thus shielding conductive layer via metallic wire grounding. However, as eddy current is caused in the metallic silicide layer a problem occurs wherein that the quality factor Q of the inductor deteriorates.

A conventional solution to the above problem is disclosed on page 85 and 86 of “1997 Symposium on VLSI Circuits Digest of Technical Papers” which teaches structuring an inductor for reducing eddy current by providing slitting to a metallic silicide layer. FIG. 1 is a plan view showing an example of the conventional solution. FIG. 2 is a sectional view along a line AA of FIG. 1. Referring to FIGS. 1 and 2, the example of the conventional solution will be described below.

In a

semiconductor device

100, an inductor is formed by second-layer metallic wiring 114 b of a spiral type inductor pattern. A polysilicon 105 b and a metallic silicide 108 b thereon is provided under the second-layer metallic wiring 114 b with a first layer insulation film 109 and a second layer insulation film 112. The metallic silicide 108 b on the surface of the polysilicon 105 b is made of metal such as titanium, cobalt and nickel. The metallic silicide 108 b is thus located between the second-layer metallic wiring 114 b and the polysilicon 105 b. Also, concave slitting 115 is provided to the polysilicon 105 b directionally inward from the side of the outer edge.

One end of the inductor is connected to the

polysilicon

105 a, via a through hole 113, first layer metallic wiring 111 and a contact hole 110. The polysilicon 105 a is the gate electrode of an N-channel MOS transistor 120. In FIGS. 1 and 2, reference numeral 101 denotes a P-type silicon substrate, 102 denotes an element isolation oxide film, 103 denotes a P-type well, 106 denotes a side wall of an insulating film, 107 denotes N-type source and drain areas, 108 c denotes metallic silicide and 114 a denotes second-layer metallic wiring.

To clarify the characteristics of the conventional structure, a plan view at the stage at which the

metallic silicides

108 a, 108 b and 108 c are formed is shown in FIG. 3. As shown in FIG. 3, hatching sloping leftward and downward is provided for the metallic silicide 108 a on the polysilicon 105 a of the gate electrode and the metallic silicide 108 b on the polysilicon 105 b under the inductor pattern in common. Hatching sloping rightward and downward is provided for the metallic silicide 108 c formed on the surface of the silicon substrate where the N-type source and drain areas 107 of the N-channel MOS transistor 120.

According to this structure, as the

metallic silicide layer

108 b on the polysilicon 105 b under the inductor pattern is grounded, noise caused in the P-type silicon substrate 101 can be reduced to a considerable extent. Furthermore, as slitting 115 is provided to the polysilicon 105 b and the metallic silicide layer 108 b respectively under the inductor pattern, eddy current can also be prevented.

However, in this example of the conventional solution, as an area of the slitting 115 of the polysilicon 105 b is not shielded, high frequency current cannot be prevented from flowing to the P-type silicon substrate 101 through the area of the slitting 115. This causes a problem of antimony. Thus, as more slittings 115 are provided to complete the inhibition of eddy current, the shielding performance is conversely deteriorated.

An aspect of the invention is to provide a semiconductor device wherein the above-mentioned problem of antinomy is solved. The semiconductor device of the present invention enables the enhancement of the performance of shielding and the inhibition of eddy current respectively between an inductor and a substrate. Therefore, the noise in the substrate can be reduced and the deterioration of the quality factor Q of the inductor, due to eddy current, can also be inhibited.

SUMMARY OF THE INVENTION

In an embodiment of the semiconductor device of the present invention, a semiconductor device wherein a circuit in which an active device including a MOS transistor and an inductor are mixed is mounted on a semiconductor substrate and is provided with a first shield pattern made of a conductive film. The first shield pattern is provided between an inductor and the surface of a semiconductor substrate under the inductor thus insulating the inductor from the surface of the semiconductor substrate by a first insulating film, is insulated from the inductor by a second insulating film and is provided with plural concave slittings from the side of the edge toward the inside and a second shield pattern provided a convex area which is located on the surface of the semiconductor substrate in registration with the slitting and in which metallic silicide is formed and a connection area which is provided on the surface of the semiconductor substrate and in which metallic silicide is formed for connecting plural convex areas.

In another embodiment of a semiconductor of the present invention, a semiconductor device wherein a circuit in which an active device including a MOS transistor and an inductor are mixed is mounted on a semiconductor substrate and is provided with a first shield pattern made of metallic silicide which is provided on the surface of a semiconductor substrate under an inductor and is provided with plural concave slittings from the side of the edge toward the inside and a second shield pattern provided between the inductor and the surface of the semiconductor substrate, insulated from the surface of the semiconductor substrate by a first insulating film, insulated from the inductor by a second insulating film and provided with a convex conductive film provided on the surface of the semiconductor substrate in registration with the slitting and a connection area made of the conductive film for connecting the plural convex conductive films.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, advantages and features of the present invention will be more apparent from the following description taken in conjunction with the accompanying drawings, in which: [0014]
FIG. 1 is a plan view showing a conventional semiconductor device; [0015]
FIG. 2 is a sectional view viewed along a line AA of FIG. 1; [0016]
FIG. 3 is a plan view at the state at which [0017] metallic suicide 108 a and 108 b are formed in the conventional semiconductor device;
FIG. 4 is a plan view showing a first example of a first embodiment of the present invention; [0018]
FIG. 5 is a sectional view viewed along a line AA of FIG. 4; [0019]
FIG. 6 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the first embodiment; [0020]
FIG. 7 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the first embodiment; [0021]
FIG. 8 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the fast embodiment; [0022]
FIG. 9 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the first embodiment; [0023]
FIG. 10 is a plan view showing the manufacturing process shown in FIG. 8; [0024]
FIG. 11 selectively shows first-layer [0025] metallic wiring 11, second-layer metallic wiring 14 a and 14 b and a contact hole 10 and a through hole 13 in the plan shown in FIG. 4;
FIG. 12 is a plan view showing a second example of the first embodiment of the present invention; [0026]
FIG. 13 is a sectional view viewed along a line AA of FIG. 12; [0027]
FIG. 14 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the second embodiment; [0028]
FIG. 15 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the second embodiment; [0029]
FIG. 16 is a sectional view showing a manufacturing method of a semiconductor device in the first example of the second embodiment; [0030]
FIG. 17 is a plain view showing a third example of the first embodiment of the present invention; [0031]
FIG. 18 is a plain view showing a forth example of the first embodiment of the present invention; [0032]
FIG. 19 is a plan view showing a fifth example of the first embodiment of the present invention; [0033]
FIG. 20 is a sectional view viewed along a line AA of FIG. 19; [0034]
FIG. 21 is a sectional view showing the fifth example of the first embodiment; [0035]
FIG. 22 is a plan view when a metallic silicide is formed in a first example of the second embodiment of the present invention; and [0036]
FIG. 23 is a sectional view at the state at which a second-layer metallic wiring including an inductor is formed. [0037]

BRIEF DESCRIPTION OF THE PREFERRED EMBODIMENTS

A semiconductor device in a first embodiment of the invention is provided with a first shield pattern and a second shield pattern. The first shield pattern is made of a conductive film which is provided between an inductor and the surface of a silicon substrate under the inductor. The first shield pattern is electrically insulated from the surface of the silicon substrate by a first insulating film. The first shield pattern is electrically insulated from the inductor by a second insulating film. The first shield pattern is provided with plural concave slittings directionally inward from the side of, the outer edge. The second shield pattern comprises a convex area and a connection area. The convex area is provided on the surface of the silicon substrate. The convex area is made of metallic silicide formed in corresponding with the concave slitting. The connection area connects plural convex areas. [0038]
FIGS. 4 and 5 show a first example of a first embodiment of the invention, FIG. 4 is a plan and FIG. 5 is a sectional view along a line AA of FIG. 4. [0039]
In a [0040] semiconductor device 200, a spiral type second-layer metallic wiring 14 b is provided as an inductor. A polysilicon 5 b is provided as a conductive film under the inductor with first and second layer insulation films 9 and 12. The first and second layer insulation films 9 and 12 are formed between the inductor 14 b and the polysilicon 5 b as a second insulating film. The polysilicon 5 b has metallic silicide 8 b made of metal such as titanium, cobalt and nickel, (are they connected). The polysilicon 5 b, having a concave slitting 15, is formed as a first shield pattern. The polysilicon 5 b is insulated from the P-type silicon substrate 1 by an element isolation oxide film 2 of a first insulating film. The slitting of the element isolation oxide film 2 is formed in correspondence with the polysilicon 5 b, accurately with a sidewall 6 of the polysilicon 5 b.
[0041] Metallic silicide 8 d is provided on the surface of the P-type silicon substrate 1. The metallic silicide comprises convex metallic silicide 8 d-1 in a shape similar to the slitting 15 and a metallic silicide connection area 8 d-2 for connecting plural convex metallic silicides 8 d-1. The metallic silicide 8 d is provided as the second shield pattern.
The first shield pattern of the [0042] metallic silicide 8 b and the second shield pattern of the metallic silicide 8 d are both connected to a ground power source by a ground connection not shown. Either the first shield pattern or the second shield pattern exists between the second-layer metallic wiring 14 b of the inductor and the P-type silicon substrate 1. Thus, substrate noise caused by coupling the second-layer metallic wiring 14 b of the inductor and the P-type silicon substrate 1, can be prevented, even when multiple slittings are provided to prevent the deterioration of the quality factor Q of the inductor due to eddy current.
One end of the [0043] inductor 14 b is connected to the polysilicon 5 a via a through hole 13, first-layer metallic wiring 11 and a contact hole 10. The polysilicon 5 a is the gate electrode of an N-channel MOS transistor 20. As shown in FIGS. 1, reference numeral 2 denotes an element isolation oxide film for electrically isolating the N-type source and drain areas 7 of the N-channel MOS transistor and the source and drain areas of another MOS transistor not shown, 3 denotes a P-type well, 6 denotes a side wall of an insulating film, 8 a denotes metallic silicide formed on the surface of the polysilicon 5 a of the gate electrode of the MOS transistor, 8 c denotes metallic silicide formed on the surface of the source and drain areas and 14 a denotes second-layer metallic wiring.
FIGS. [0044] 6 to 9 are sectional views showing a manufacturing process of the semiconductor device in the first example of the first embodiment. Other manufacturing methods may be used and thus the invention is not limited to the manufacturing method described herein.
First, as shown in FIG. 6, an element [0045] isolation oxide film 2 is selectively formed on the surface of a P-type silicon substrate 1. The element isolation oxide film 2 has the thickness of about 200 to 500 nm. At this time, no element isolation oxide film 2 is formed in an area 15 a in which slitting is to be formed in an inductor formation area 21.
Next, as shown in FIG. 7, after a P-[0046] type well 3 is formed, a gate oxide film 4 having the thickness of about 2 to 10 nm and polysilicon having about 100 to 400 nm thick are sequentially grown. By patterning the gate oxide film 4 and the polysilicon using resist as a mask, polysilicon 5 a of a gate electrode is formed. At this time, polysilicon 5 b having slitting 15 is formed on the surface of the element isolation oxide film 2 in the inductor wiring formation area 22. After the polysilicon 5 a and b is formed, an insulating film 201 is grown.
Next, as shown in FIG. 8, the insulating [0047] film 201 is etched back and a side wall 6 is formed. Then, N-type source and drain areas 7 of an N-channel MOS transistor 20 (and the P-type source and drain areas of a P-channel MOS transistor not shown) are formed by ion implantation. Further, heat treatment is applied to them at about 1000 to 1100 C for about 10 to 60 seconds by rapid thermal annealing (RTA) and ion impurities in the source and drain areas 7 are activated. Afterward, the surface of the silicon 1 and the surface of the polysilicon 5 a and 5 b where metallic silicide is to be formed are exposed. Then, for example cobalt is deposited on these surfaces and a heat treatment is applied. Metallic silicide 8 a, 8 c, 8 b and 8 d are thereby respectively formed on the polysilicon 5 a of the gate of the MOS transistor 20 on the N-type source and drain areas 7, on the polysilicon 5 b where the inductor wiring is to be formed and on the P-type silicon substrate 1 at the slitting 15.
Afterward, as shown in FIG. 9, a first [0048] layer insulation film 9 is grown so that it has the thickness of about 800 to 1200 nm. Then, as shown in FIG. 5, a contact hole 10 is formed in the first layer insulating film 9 by using a resist as a mask. A metallic film of tungsten and others is embedded in the contact hole 10. A metallic film of aluminum and others is grown on the first layer insulation film 9 so that it has the thickness of about 400 to 800 nm. By patterning the metallic film with using a resist as a mask, the first-layer metallic wiring 11 is formed. Furthermore, a second layer insulation film 12 is grown so that it has the thickness of about 800 to 1200 nm. Then, a through hole 13 is formed in a required location of the second larger insulation film 12 by using a resist as a mask. A metallic film of tungsten and others is embedded in the through hole 13 while a metallic film of aluminum and others is grown so that it has the thickness of about 400 to 800 nm. By patterning the metallic film using a resist as a mast, the second-layer metallic wiring as an inductor wiring 14 b and the connection wiring is formed.
FIG. 10 is a plan showing the stage of FIG. 8. FIG. 8 is a sectional view viewed along the line AA of FIG. 10. As shown in FIG. 10, hatching sloping leftward and downward is added to the [0049] metallic silicide 8 a on the polysilicon 5 a of the gate electrode and the metallic silicide 8 b of the first shield pattern on the polysilicon 5 b under an inductor pattern. Hatching sloping rightward and downward is added to the metallic silicide 8 c on the N-type source and drain areas 7 of the N-channel MOS transistor 20 and the metallic silicide 8 d of the second shield pattern on the P-type silicon substrate at a convex area corresponding with the slitting 15. The metallic silicide 8 b and 8 d are connected to a ground power source by a ground connection (not shown).
FIG. 11 selectively shows the first-layer metallic wring [0050] 11, the second-layer metallic wiring 14 a and 14 b, the contact hole 10 and the through hole 13 in the plan shown in FIG. 4. The second-layer metallic wiring 14 b is formed in a spiral shape as the inductor.
In this embodiment, the [0051] metallic silicide layer 8 b on the polysilicon 5 b is provided as the first shield pattern. Also, the silicide layer 8 d is provided at the slitting 15 of the first shield pattern as the second shield pattern. Therefore, the coupling of the inductor and the silicon substrate is substantially cut off. Thus, noise in the substrate can be effectively inhibited. Further, the metallic silicide layer 8 b as the first shield pattern and the metallic silicide layer 8 d at the slitting 15 as the second shield pattern are isolated at least by the sidewall 6. Thus, eddy current is inhibited and the quality factor Q of the inductor can be also enhanced.
One embodiment of the semiconductor device of the present invention and its manufacturing method has described above with reference to the drawings. But concrete constitution is not limited to the present embodiment, and design can be changed within the scope of the present invention. [0052]
FIG. 12 is a plan view showing a second example of the first embodiment. FIG. 13 is a sectional view along the line AA of FIG. 12. This example is different from the first example of the first embodiment shown in FIGS. 4 and 5 in a [0053] gate oxide film 4. The gate oxide film 4 of a MOS transistor 20 is used as a first insulating film. The gate oxide film 4 is formed between polysilicon 5 b under an inductor 14 b and a P-type silicon substrate 1. In this example, either a first shield pattern 8 b or a second shield pattern 8 d exists between second-layer metallic wiring 14 b of the inductor and the P-type silicon substrate 1, as in the first example. Thus, the coupling of the second-layer metallic wiring 14 b as the inductor and the P-type silicon substrate 1 can be completely prevented, even if multiple slittings are provided to inhibit eddy current. Further, in this example, as metallic silicide 8 b and metallic silicide 8 d can be formed by self-alignment, metallic silicide 8 b and 8 d can be formed more easily and more precisely than in the first example.
FIGS. [0054] 14 to 16 are sectional views showing the manufacturing processes of the semiconductor device in the second example of the first embodiment. FIGS. 14 to 16 are different from FIGS. 6 to 8 in the inductor formation area 21. However, they show similar manufacturing processes in the other area.
FIG. 14 is the sectional view an element [0055] isolation oxide film 2 is formed. FIG. 14 is similar to FIG. 6, however, no element isolation oxide film is formed in an inductor formation area 21 in FIG. 14.
FIG. 15 is the sectional view showing an insulating film for a [0056] side wall 201 that is grown. FIG. 15 is similar to FIG. 7. Polysilicon 5 b in the inductor formation area 21 is provided on a gate oxide film 4 in FIG. 15.
FIG. 16 is the sectional view showing after [0057] metallic silicide 8 a, 8 b, 8 c and 8 d is formed. FIG. 16 is similar to FIG. 2C. The metallic silicides 8 a and 8 c in the transistor area 22 are formed by self-alignment. Also, the metallic silicide 8 b on the polysilicon 5 b and metallic silicide 8 d on the P-type silicon substrate 1 are formed off the interval of the side wall 6 by self-alignment in the inductor formation area 21.
FIGS. 17 and 18 respectively shows the third and the fourth example of the first embodiments. As shown in FIG. 17, [0058] metallic silicide 8 d under an inductor 14 b may be formed on an N-type area 7 a similar to the N-type source and drain areas 7 of the N-channel MOS transistor 20. Also, a P-type well 3 a may be omitted. As shown in FIG. 18, metallic silicide 8 d may be formed on a P-type area 202 similar to the P-type source and drain of a P-channel MOS transistor not shown.
FIG. 19 is a plan view showing a fifth example of the first embodiment. FIG. 20 is a sectional view along the line AA of FIG. 19. FIG. 21 is a sectional view where an [0059] inductor 14 b is formed. In the fifth example, a contact bole 10 a is provided across a metallic silicide 8 b and a metallic silicide 8 d. The metallic silicide layer 8 b on the polysilicon 5 b is provided as a first shield pattern. The metallic silicide layer 8 d on a P-type semiconductor substrate l is provided as a second shield pattern. A contact opening 204 is provided as shown in FIG. 20. Then, metal such as tungsten is embedded in a contact hole 10 of a MOS transistor 20 wherein the metal is also embedded in the contact hole 10 a so as to connect the first shield pattern 8 b and the second shield pattern 8 d. In this example, only either the first shield pattern or the second shield pattern has to be connected to a ground power source by a ground connection. Thus, wiring can be reduced.
Next, the second embodiment of the invention will be described. A semiconductor device in the second embodiment is provided with a first shield pattern and a second shield pattern. The first shield pattern is made of metallic silicide provided on the surface of a silicon substrate under an inductor. The first shield pattern is provided with plural concave slittings directionally inward. The second shield pattern is provided between the inductor and the surface of the silicon substrate. The second shield pattern is insulated from the surface of the silicon substrate by a first insulating film, and is insulated from the inductor by a second insulating film. The second shield pattern comprises a convex conductive film and a connection conductive film. The convex conductive film is provided in correspondence with the concave slitting of the first shield pattern. The connection conductive film connects plural convex conductive films. [0060]
FIG. 22 is a plan view when [0061] metallic silicide 8 a is formed in a first example of the second embodiment of the invention. FIG. 22 corresponds to FIG. 10 in the first example of the first embodiment. FIG. 23 is a sectional view when second-layer metallic wiring including the inductor 14 b is formed. FIG. 23 corresponds to FIG. 5. In FIG. 22, as in FIG. 10, metallic silicide 8 a and 8 b on the surface of polysilicon are provided with oblique lines sloping rightward and downward. The metallic silicide 8 c and 8 d on the silicon substrate is provided with oblique lines sloping leftward and downward.
This example is different from the first example of the first embodiment shown in FIG. 5 and FIG. 10. The [0062] metallic silicide 8 b on the P-type silicon substrate 1 is the first shield pattern having concave slitting 203. The metallic silicide 8 b on polysilicon 5 b is the second shield pattern having a convex portion 8 b-1 corresponding with the concave slitting and a connection area 8 b-2.
The [0063] first shield pattern 8 d having the concave slitting usually occupies a larger area than the second shield pattern 8 b having the convex portion. The first shield pattern 8 d having a larger area is formed on the surface of the silicon substrate in this embodiment. Therefore, there is an effect of total parasitic capacity between the inductor 14 b and the first or second shield pattern 8 d and 8 b can be reduced. Thus, the resonance frequency of the inductor can be increased. In this second embodiment, as in the first embodiment, a gate oxide film may be used instead of the element isolation oxide film 2 in FIG. 23. The gate oxide film is provided as the first insulating film under the polysilicon film 5 b shown in FIG. 12. The metallic silicide 8 d may be formed on the surface of N-type silicon substrate under the first shield pattern as shown in FIG. 17. Also, the metallic silicide 8 d may be formed on the surface of P-type silicon substrate under the first shield pattern as shown in FIG. 18. The contact hole may be formed across the metallic silicide 8 d as the first shield pattern and the metallic silicide layer 8 b as the second shield pattern. The contact hole may be embedded by a metallic film of tungsten and others as shown in FIGS. 19 and 20. Thus, the number of wiring to a ground power source can be reduced.
As described above, according to the first embodiment of the invention, the coupling of the inductor and the silicon substrate can be substantially cut off by the first and second shield patterns. Thus, noise in the substrate can be effectively inhibited. Further, the metallic silicide layer as the first shield pattern and the metallic silicide layer at the slitting as the second shield pattern are isolated by a side wall of the insulating film. Thus, eddy current is inhibited and the quality factor Q of the inductor can be also enhanced. [0064]
Also, in the second embodiment of the invention, total parasitic capacity between the inductor and the first or second shield pattern can be reduced. Therefore, the resonance frequency of the inductor can be increased in addition to the abovementioned effect. [0065]
It is apparent that the present invention is not limited to the above embodiments, but may be modified and changed without departing from the scope and spirit of the invention. [0066]

Claims

What is claimed is:

1. A method of manufacturing a semiconductor device comprising:

forming a first insulating layer on a substrate to expose a part of said substrate,

forming a first shield pattern on said first insulating layer;

forming a second shield pattern on said part of said substrate;

forming a second insulating layer; and

forming an inductor pattern on said second insulating layer;

wherein said first shield pattern has a concave slit from an edge of said first shield pattern toward a center of said first shield pattern.

2. The method of manufacturing a semiconductor device as claimed in

claim 1

,

wherein said first shield pattern is comprising a first conductive layer and a second conductive layer on said first conductive layer.

3. The method of manufacturing a semiconductor device as claimed in

claim 2

, wherein said step of forming said first shield pattern is comprising forming said a first conductive layer on said first insulating layer, forming a sidewall on said first conductive layer, and forming said second conductive layer on said first conductive layer.

4. The method of manufacturing a semiconductor device as claimed in claim l,

wherein said substrate is comprising an inductor area and a transistor area, and said first insulating layer is comprising an element isolating layer at said inductor area and a gate insulating layer at said transistor area.

5. The method of manufacturing a semiconductor device as claimed in

claim 4

, wherein said step of forming said first insulating layer is comprising forming the first insulating layer, patterning said first insulating layer to expose a first part of said substrate at said inductor area, patterning said first insulating layer to expose a second part of said substrate at said transistor area, and forming a gate insulating layer on said second part of said substrate on said transistor area.

6. The method of manufacturing a semiconductor device as claimed in

claim 5

, wherein said first shield pattern is comprising a first conductive layer and a second conductive layer on said first conductive layer.

7. The method of manufacturing a semiconductor device as claimed in

claim 6

, wherein said step of forming said first shield pattern is comprising forming said first conductive layer on said element isolating layer at said inductor area, forming said first conductive layer on said gate insulating layer at said transistor area, forming a sidewall on said first conductive layer, and forming said second conductive layer on said first conductive layer.

8. The method of manufacturing a semiconductor device as claimed in

claim 6

, wherein said inductor pattern is formed at said inductor area.

9. The method of manufacturing a semiconductor device as claimed in

claim 1

, wherein said substrate is comprising an inductor area and a transistor area, and

wherein said step of forming said first insulating layer is comprising forming the first insulating layer, patterning said first insulating layer to expose a first part of said substrate on said inductor area and a second part of said substrate on said transistor area, forming gate insulating layer on said first part of said substrate on said inductor area to expose at a region corresponding to said concave slit, and forming a gate insulating layer on said second part of said substrate on said transistor area,

10. The method of manufacturing a semiconductor device as claimed in

claim 9

, wherein said shield pattern is comprising a first conductive layer and a second conductive layer on said first conductive layer.

11. The method of manufacturing a semiconductor device as claimed in

claim 10

, wherein said step of forming said first shield pattern is comprising forming said first conductive layer on said gate insulating layer at said inductor area, forming said first conductive layer on said gate insulating layer at said transistor area, forming a sidewall on said first conductive layer, and forming said second conductive layer on said first conductive layer.

12. The method of manufacturing a semiconductor device as claimed in

claim 11

, wherein said inductor pattern is formed at said inductor area.

13. The method of manufacturing a semiconductor device as claimed in

claim 9

further comprising:

forming a contact hole in said second insulating layer to expose said concave slit of said second shield pattern and said first shield pattern where is adjacent to said concave slit.

14. A semiconductor device comprising:

a substrate;

a first insulating layer on said substrate;

a first shield pattern, said first shield pattern on said first insulating layer, having a concave slit from an edge of said first shield pattern toward a center of said first shield pattern;

a second insulating layer on said first shield pattern;

a second shield pattern on said substrate, said second shield pattern being formed at a region under said concave slit of said first shield pattern; and

an inductor on said second insulating layer;

wherein said first insulating layer has a concave slit at a region under said concave silt of said first shield pattern.

15. The semiconductor device as claimed in

claim 14

, wherein said first shield pattern and second shield pattern are connected by at least one through hole which is formed in said first insulating layer.

16. The semiconductor device as claimed in

claim 15

, wherein said first shield pattern and second shield pattern are connected by a ground connection to a ground power source.

17. A semiconductor device comprising:

a substrate;

a first shield pattern on said substrate, said shield pattern having a concave slit from an edge of said first shield pattern toward a center of said first shield pattern,

a first insulating layer on said first shield pattern,

a second shield pattern on said first insulating layer, said second shield pattern being formed at a region above said concave slit of said first shield pattern,

a second insulating layer on said second shield pattern; and

an inductor on said second insulate layer.

18. The semiconductor device as claimed in

claim 17

19. The semiconductor device as claimed in

claim 18