TWI735651B - Copper foil and copper clad laminated board with the copper foil - Google Patents
Copper foil and copper clad laminated board with the copper foil Download PDFInfo
- Publication number
- TWI735651B TWI735651B TW106131202A TW106131202A TWI735651B TW I735651 B TWI735651 B TW I735651B TW 106131202 A TW106131202 A TW 106131202A TW 106131202 A TW106131202 A TW 106131202A TW I735651 B TWI735651 B TW I735651B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper foil
- treatment layer
- copper
- resin
- layer
- Prior art date
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 257
- 239000011889 copper foil Substances 0.000 title claims abstract description 237
- 239000010949 copper Substances 0.000 title claims description 22
- 229910052802 copper Inorganic materials 0.000 title claims description 21
- 238000000034 method Methods 0.000 claims abstract description 29
- 239000010410 layer Substances 0.000 claims description 88
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 80
- 239000002335 surface treatment layer Substances 0.000 claims description 65
- 239000000758 substrate Substances 0.000 claims description 51
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 42
- 229910052759 nickel Inorganic materials 0.000 claims description 40
- 239000011651 chromium Substances 0.000 claims description 38
- 229910052804 chromium Inorganic materials 0.000 claims description 37
- 229910052725 zinc Inorganic materials 0.000 claims description 25
- 239000011701 zinc Substances 0.000 claims description 25
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 24
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 18
- 239000002245 particle Substances 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 4
- 230000001070 adhesive effect Effects 0.000 claims description 4
- 230000005540 biological transmission Effects 0.000 abstract description 47
- 239000011347 resin Substances 0.000 description 100
- 229920005989 resin Polymers 0.000 description 100
- 238000011282 treatment Methods 0.000 description 63
- 238000005868 electrolysis reaction Methods 0.000 description 36
- 238000007747 plating Methods 0.000 description 32
- 230000000694 effects Effects 0.000 description 23
- 238000005259 measurement Methods 0.000 description 22
- 238000007788 roughening Methods 0.000 description 19
- 238000009713 electroplating Methods 0.000 description 16
- 239000007788 liquid Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 230000032798 delamination Effects 0.000 description 13
- 239000011888 foil Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 12
- 239000000654 additive Substances 0.000 description 11
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 10
- 229910000077 silane Inorganic materials 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- 239000003792 electrolyte Substances 0.000 description 9
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 8
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 8
- 239000000460 chlorine Substances 0.000 description 8
- 230000002500 effect on skin Effects 0.000 description 8
- 238000000265 homogenisation Methods 0.000 description 8
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 239000004020 conductor Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 description 6
- 239000008151 electrolyte solution Substances 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000004354 Hydroxyethyl cellulose Substances 0.000 description 5
- 229920000663 Hydroxyethyl cellulose Polymers 0.000 description 5
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 5
- 235000019447 hydroxyethyl cellulose Nutrition 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 229910021529 ammonia Inorganic materials 0.000 description 4
- ROOXNKNUYICQNP-UHFFFAOYSA-N ammonium persulfate Chemical compound [NH4+].[NH4+].[O-]S(=O)(=O)OOS([O-])(=O)=O ROOXNKNUYICQNP-UHFFFAOYSA-N 0.000 description 4
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 4
- 239000012964 benzotriazole Substances 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000005246 galvanizing Methods 0.000 description 4
- 239000011229 interlayer Substances 0.000 description 4
- 239000011780 sodium chloride Substances 0.000 description 4
- OBDVFOBWBHMJDG-UHFFFAOYSA-M 3-sulfanylpropane-1-sulfonate Chemical compound [O-]S(=O)(=O)CCCS OBDVFOBWBHMJDG-UHFFFAOYSA-M 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- LNOPIUAQISRISI-UHFFFAOYSA-N n'-hydroxy-2-propan-2-ylsulfonylethanimidamide Chemical compound CC(C)S(=O)(=O)CC(N)=NO LNOPIUAQISRISI-UHFFFAOYSA-N 0.000 description 3
- 229920001955 polyphenylene ether Polymers 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000001509 sodium citrate Substances 0.000 description 3
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000996 additive effect Effects 0.000 description 2
- 235000011114 ammonium hydroxide Nutrition 0.000 description 2
- 239000011609 ammonium molybdate Substances 0.000 description 2
- 235000018660 ammonium molybdate Nutrition 0.000 description 2
- APUPEJJSWDHEBO-UHFFFAOYSA-P ammonium molybdate Chemical compound [NH4+].[NH4+].[O-][Mo]([O-])(=O)=O APUPEJJSWDHEBO-UHFFFAOYSA-P 0.000 description 2
- 229940010552 ammonium molybdate Drugs 0.000 description 2
- 229910001870 ammonium persulfate Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- MEYVLGVRTYSQHI-UHFFFAOYSA-L cobalt(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Co+2].[O-]S([O-])(=O)=O MEYVLGVRTYSQHI-UHFFFAOYSA-L 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910000365 copper sulfate Inorganic materials 0.000 description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 2
- 239000012792 core layer Substances 0.000 description 2
- ZYGHJZDHTFUPRJ-UHFFFAOYSA-N coumarin Chemical compound C1=CC=C2OC(=O)C=CC2=C1 ZYGHJZDHTFUPRJ-UHFFFAOYSA-N 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- SURQXAFEQWPFPV-UHFFFAOYSA-L iron(2+) sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Fe+2].[O-]S([O-])(=O)=O SURQXAFEQWPFPV-UHFFFAOYSA-L 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- LGQLOGILCSXPEA-UHFFFAOYSA-L nickel sulfate Chemical compound [Ni+2].[O-]S([O-])(=O)=O LGQLOGILCSXPEA-UHFFFAOYSA-L 0.000 description 2
- -1 on the rough surface Chemical compound 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 230000010076 replication Effects 0.000 description 2
- FRTIVUOKBXDGPD-UHFFFAOYSA-M sodium;3-sulfanylpropane-1-sulfonate Chemical compound [Na+].[O-]S(=O)(=O)CCCS FRTIVUOKBXDGPD-UHFFFAOYSA-M 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- RZLVQBNCHSJZPX-UHFFFAOYSA-L zinc sulfate heptahydrate Chemical compound O.O.O.O.O.O.O.[Zn+2].[O-]S([O-])(=O)=O RZLVQBNCHSJZPX-UHFFFAOYSA-L 0.000 description 2
- GOLORTLGFDVFDW-UHFFFAOYSA-N 3-(1h-benzimidazol-2-yl)-7-(diethylamino)chromen-2-one Chemical compound C1=CC=C2NC(C3=CC4=CC=C(C=C4OC3=O)N(CC)CC)=NC2=C1 GOLORTLGFDVFDW-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 229910000570 Cupronickel Inorganic materials 0.000 description 1
- RUPBZQFQVRMKDG-UHFFFAOYSA-M Didecyldimethylammonium chloride Chemical compound [Cl-].CCCCCCCCCC[N+](C)(C)CCCCCCCCCC RUPBZQFQVRMKDG-UHFFFAOYSA-M 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 241001311547 Patina Species 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- GDFUXPFQUMDNJA-UHFFFAOYSA-N [SiH4].C=CC1=CC=CC=C1 Chemical compound [SiH4].C=CC1=CC=CC=C1 GDFUXPFQUMDNJA-UHFFFAOYSA-N 0.000 description 1
- NOKSMMGULAYSTD-UHFFFAOYSA-N [SiH4].N=C=O Chemical compound [SiH4].N=C=O NOKSMMGULAYSTD-UHFFFAOYSA-N 0.000 description 1
- NOHQTLHHNIKWBA-UHFFFAOYSA-N [SiH4].NC(=O)N Chemical compound [SiH4].NC(=O)N NOHQTLHHNIKWBA-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 125000003354 benzotriazolyl group Chemical class N1N=NC2=C1C=CC=C2* 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 238000010349 cathodic reaction Methods 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- ZCDOYSPFYFSLEW-UHFFFAOYSA-N chromate(2-) Chemical compound [O-][Cr]([O-])(=O)=O ZCDOYSPFYFSLEW-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- VQWFNAGFNGABOH-UHFFFAOYSA-K chromium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[Cr+3] VQWFNAGFNGABOH-UHFFFAOYSA-K 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 description 1
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- BQJTUDIVKSVBDU-UHFFFAOYSA-L copper;sulfuric acid;sulfate Chemical compound [Cu+2].OS(O)(=O)=O.[O-]S([O-])(=O)=O BQJTUDIVKSVBDU-UHFFFAOYSA-L 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229960000956 coumarin Drugs 0.000 description 1
- 235000001671 coumarin Nutrition 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000002845 discoloration Methods 0.000 description 1
- BXKDSDJJOVIHMX-UHFFFAOYSA-N edrophonium chloride Chemical compound [Cl-].CC[N+](C)(C)C1=CC=CC(O)=C1 BXKDSDJJOVIHMX-UHFFFAOYSA-N 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011790 ferrous sulphate Substances 0.000 description 1
- 235000003891 ferrous sulphate Nutrition 0.000 description 1
- 150000004688 heptahydrates Chemical class 0.000 description 1
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000359 iron(II) sulfate Inorganic materials 0.000 description 1
- 125000005395 methacrylic acid group Chemical group 0.000 description 1
- NQMRYBIKMRVZLB-UHFFFAOYSA-N methylamine hydrochloride Chemical compound [Cl-].[NH3+]C NQMRYBIKMRVZLB-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000363 nickel(II) sulfate Inorganic materials 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- FZHAPNGMFPVSLP-UHFFFAOYSA-N silanamine Chemical compound [SiH3]N FZHAPNGMFPVSLP-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- XFTALRAZSCGSKN-UHFFFAOYSA-M sodium;4-ethenylbenzenesulfonate Chemical compound [Na+].[O-]S(=O)(=O)C1=CC=C(C=C)C=C1 XFTALRAZSCGSKN-UHFFFAOYSA-M 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- TXDNPSYEJHXKMK-UHFFFAOYSA-N sulfanylsilane Chemical compound S[SiH3] TXDNPSYEJHXKMK-UHFFFAOYSA-N 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000009864 tensile test Methods 0.000 description 1
- 238000004154 testing of material Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- UKRDPEFKFJNXQM-UHFFFAOYSA-N vinylsilane Chemical compound [SiH3]C=C UKRDPEFKFJNXQM-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 150000003751 zinc Chemical class 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D1/00—Electroforming
- C25D1/04—Wires; Strips; Foils
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/18—Electroplating using modulated, pulsed or reversing current
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/605—Surface topography of the layers, e.g. rough, dendritic or nodular layers
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/06—Wires; Strips; Foils
- C25D7/0614—Strips or foils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
- H05K3/389—Improvement of the adhesion between the insulating substrate and the metal by the use of a coupling agent, e.g. silane
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Electroplating Methods And Accessories (AREA)
- Laminated Bodies (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
Abstract
本發明的目的在於,提供一種銅箔及使用該銅箔的覆銅層積板,所述銅箔可實現優秀的密接性、傳輸特性及耐熱性。 The object of the present invention is to provide a copper foil and a copper-clad laminate using the copper foil, which can achieve excellent adhesion, transmission characteristics, and heat resistance.
一種銅箔,其特徵在於,採用JIS B0631:2000規定的圖形法確定粗糙度圖形,用根據該粗糙度圖形算出的起伏數Wn及粗糙度圖形平均深度R表示銅箔的黏合表面的特徵時,起伏數Wn為11至30個/mm,且粗糙度圖形平均深度R為0.20至1.10μm。 A copper foil characterized in that the roughness pattern is determined by the pattern method specified in JIS B0631:2000, and when the number of undulations Wn and the average depth R of the roughness pattern calculated from the roughness pattern are used to express the characteristics of the bonding surface of the copper foil, The number of undulations Wn is 11 to 30/mm, and the average depth R of the roughness pattern is 0.20 to 1.10 μm.
Description
本發明涉及一種銅箔以及具有該銅箔的覆銅層積板。 The invention relates to a copper foil and a copper-clad laminated board having the copper foil.
近年來,電子設備的小型化、薄壁化得到發展,特別是以伺服器、天線、行動電話為代表的通信設備中使用的各種電子元件使用了內置有高度積體化、小型且高密度的印刷配線板的IC或LSI等。 In recent years, the miniaturization and thinning of electronic equipment has been developed. In particular, various electronic components used in communication equipment such as servers, antennas, and mobile phones use highly integrated, small and high-density built-in electronic components. IC or LSI of printed wiring board.
應對這種情況,對這些設備中使用的高密度實裝用多層印刷配線板及可撓性印刷配線板等(以下有時僅稱為印刷配線板)的電路配線圖案亦要求高密度化,對電路配線的寬度與間隔微細的電路配線圖案即所謂精細圖案的印刷配線板的需求增高。 To cope with this situation, high-density circuit wiring patterns such as multilayer printed wiring boards for high-density mounting and flexible printed wiring boards used in these devices (hereinafter sometimes referred to as printed wiring boards) are also required to be high-density. The demand for so-called fine-patterned printed wiring boards with circuit wiring patterns with fine circuit wiring widths and intervals has increased.
過去,印刷配線板中使用的銅箔以熱壓接在樹脂基材的一側的表面為粗化面,藉由該粗化面發揮對樹脂基材的固著效應,提高樹脂基材與銅箔的接合強度,確保了作為印刷配線板的可靠性(例如專利文獻1)。 In the past, the copper foil used in printed wiring boards has a roughened surface on the side of the resin substrate by thermocompression bonding. The roughened surface exerts a fixing effect on the resin substrate and improves the resin substrate and copper. The bonding strength of the foil ensures the reliability as a printed wiring board (for example, Patent Document 1).
然而,為提高電子設備的信息處理速度及支持無線通信,要求電子元件可進行電訊號的高速傳輸,支持高頻的基板的應用亦得到發展。支持高頻的基板中,為進行電訊號的 高速傳輸,需要減少傳輸損耗,除了要求樹脂基材的低介電常數化外,還要求減少作為導體的電路配線的傳輸損耗。特別是超過數GHz的高頻區中,集膚效應導致在電路配線中流通的電流集中到銅箔表面,因此將進行過以前的粗化處理的銅箔用於支持高頻的基板時,粗化處理部的傳輸損耗大,存在傳輸特性惡化的問題。 However, in order to increase the information processing speed of electronic equipment and support wireless communication, electronic components are required to be capable of high-speed transmission of electrical signals, and the application of high-frequency substrates has also been developed. For high-frequency-supporting substrates, in order to achieve high-speed transmission of electrical signals, it is necessary to reduce transmission loss. In addition to lowering the dielectric constant of the resin base material, it is also required to reduce the transmission loss of the circuit wiring as the conductor. Especially in the high frequency region exceeding several GHz, the skin effect causes the current flowing in the circuit wiring to concentrate on the surface of the copper foil. Therefore, when the copper foil that has been subjected to the previous roughening treatment is used for the substrate supporting high frequency, the skin effect The transmission loss of the chemical processing unit is large, and there is a problem that the transmission characteristics deteriorate.
為消除上述問題,過去討論過以下方法:作為支持精細圖案及支持高頻的印刷配線板等中使用的銅箔,使用未進行粗化處理的平滑的銅箔,將該銅箔包覆在樹脂基材上使用(例如專利文獻2至4)。 In order to eliminate the above-mentioned problems, the following method has been discussed in the past: as a copper foil used in a printed wiring board supporting fine patterns and high frequency, a smooth copper foil that has not been roughened is used, and the copper foil is covered with a resin It is used on a substrate (for example, Patent Documents 2 to 4).
此處,作為降低銅箔表面粗糙度的方法,已知一種用添加光澤劑的電解電鍍浴對製箔後銅箔表面進行電鍍的手法(專利文獻5)。此外,作為得到具有適度表面粗糙度的銅箔的方法,已知一種利用脈衝電解形成粗化顆粒層的方法(專利文獻6)。 Here, as a method of reducing the surface roughness of the copper foil, a method of electroplating the surface of the copper foil after foil production with an electrolytic plating bath to which a gloss agent is added is known (Patent Document 5). In addition, as a method of obtaining a copper foil having a moderate surface roughness, a method of forming a roughened particle layer by pulse electrolysis is known (Patent Document 6).
然而,雖然這些平滑的銅箔及微細粗化銅箔的精細圖案電路形成性及高頻區的傳輸特性優秀,但是卻難以穩定且充分地提高銅箔與樹脂基材的密接性。特別是使用這種平滑的銅箔時,存在印刷配線板的製造製程及使用中的熱負荷導致銅箔與樹脂基材的密接性進一步降低的問題。因此,過去通常使銅箔的粗面化最佳化,從而兼顧傳輸特性及銅箔與樹脂基材的密接性。 However, although these smooth copper foils and finely roughened copper foils are excellent in the formability of fine pattern circuits and the transmission characteristics in the high-frequency region, it is difficult to stably and sufficiently improve the adhesion between the copper foil and the resin substrate. In particular, when such a smooth copper foil is used, there is a problem in that the thermal load during the manufacturing process and use of the printed wiring board further reduces the adhesion between the copper foil and the resin substrate. For this reason, in the past, the roughening of the copper foil was usually optimized to achieve both the transmission characteristics and the adhesion between the copper foil and the resin substrate.
另一方面,近年來開始製造超過30層的高多層高頻基板,高多層化引起的製程的複雜化導致不良逐漸多樣化。 特別是在印刷配線板上實裝各種電子元件時的迴焊製程中,不僅樹脂與銅箔間的層離(耐熱膨脹)頻頻發生,樹脂與樹脂間的層離亦頻頻發生。這種樹脂與樹脂間的層離作為以下現象被認知:加熱時樹脂分解所產生的排氣積存在樹脂與樹脂間,排氣壓力上升導致層間剝離。樹脂與樹脂間的黏合面的樹脂表面具有銅箔表面的複製形狀,銅箔表面的形狀會影響層離發生的難易度,因此為抑制樹脂與樹脂間的層離,適用具有可得到適當複製形狀的表面形狀的銅箔很重要。但是,過去的期待實現低傳輸損耗的微細粗化銅箔及平滑銅箔中,樹脂與樹脂間的層離無法得到充分抑制。此外,樹脂與樹脂間的層離可能是加熱溫度上升導致樹脂與銅箔間界面破壞而引起的,亦是電路配線從樹脂基材上剝離的主要原因。因此,特別是在電路配線(銅箔)與樹脂基材的接合面積極小的支持精細圖案的印刷配線板中,這種層離導致的成品率降低的問題嚴重化,要求提高耐熱性。 On the other hand, in recent years, the manufacture of high-multilayer high-frequency substrates with more than 30 layers has begun, and the complexity of the manufacturing process caused by the high-multilayering has led to the gradual diversification of defects. Especially in the reflow process when various electronic components are mounted on the printed wiring board, not only the delamination (heat-resistant expansion) between the resin and the copper foil occurs frequently, but also the delamination between the resin and the resin occurs frequently. This kind of delamination between resin and resin is recognized as a phenomenon in which exhaust gas generated by the decomposition of the resin during heating accumulates between the resin and the resin, and an increase in exhaust pressure causes delamination. The resin surface of the bonding surface between the resin and the resin has the replication shape of the copper foil surface. The shape of the copper foil surface affects the difficulty of delamination. Therefore, in order to suppress the delamination between the resin and the resin, it is suitable to have a suitable replication shape. The surface shape of the copper foil is very important. However, in the conventional finely roughened copper foil and smooth copper foil that are expected to achieve low transmission loss, the delamination between the resin and the resin cannot be sufficiently suppressed. In addition, delamination between the resin and the resin may be caused by the destruction of the interface between the resin and the copper foil due to the increase in heating temperature, and it is also the main reason for the circuit wiring to peel off from the resin substrate. Therefore, particularly in printed wiring boards where the bonding surface of circuit wiring (copper foil) and the resin substrate is positively small and supports fine patterns, the problem of reduction in yield due to such delamination has become serious, and improvement in heat resistance is required.
專利文獻1:日本專利特開平5-029740號公報 Patent Document 1: Japanese Patent Laid-Open No. 5-029740
專利文獻2:日本專利特開2003-023046號公報 Patent Document 2: Japanese Patent Laid-Open No. 2003-023046
專利文獻3:日本專利特開2007-165674號公報 Patent Document 3: Japanese Patent Laid-Open No. 2007-165674
專利文獻4:日本專利特開2008-007803號公報 Patent Document 4: Japanese Patent Laid-Open No. 2008-007803
專利文獻5:日本專利特開平9-272994號公報 Patent Document 5: Japanese Patent Laid-Open No. 9-272994
專利文獻6:日本專利特開2011-162860號公報 Patent Document 6: Japanese Patent Laid-Open No. 2011-162860
本發明鑒於上述實情開發而成,其目的在於提供一種銅箔及具有該銅箔的覆銅層積板,所述銅箔可實現優秀的密接性、傳輸特性及耐熱性。 The present invention was developed in view of the foregoing facts, and its object is to provide a copper foil and a copper-clad laminate having the copper foil, which can achieve excellent adhesion, transmission characteristics, and heat resistance.
在過去的銅箔中,從減少傳輸損耗的觀點來看,要求平滑且凹凸少的銅箔表面,此外從與樹脂密接及提高耐熱性的觀點來看,要求形狀粗糙且與樹脂接觸的表面積大的銅箔表面,這些都是技術常識,從這些觀點來看,通常以0.01至1μm程度的小粗化顆粒形成的凹凸調節銅箔的表面形狀。此外,過去通常使用的銅箔表面形狀的評估指標Ra(算術平均粗糙度)及Rz(十點平均粗糙度)因其運算原理而不含銅箔表面的每個山形狀的長度、單位長度的山形狀個數、或每個山形狀的深度等信息,這些指標難以對銅箔表面形狀對要求更加高性能化的印刷配線板用途的樹脂密接性、耐熱性及傳輸損耗造成的影響進行更加詳細地評估。因此,用上述指標評估的過去的銅箔未考慮到銅箔表面的起伏的影響,存在無法得到足夠的傳輸損耗特性、或無法得到足夠的耐熱性的問題。 In the conventional copper foil, from the viewpoint of reducing the transmission loss, a smooth copper foil surface with less unevenness is required. In addition, from the viewpoint of adhesion to the resin and improvement of heat resistance, it is required to have a rough shape and a large surface area in contact with the resin. These are common technical knowledge on the surface of the copper foil. From these viewpoints, the surface shape of the copper foil is usually adjusted by the irregularities formed by small roughening particles of about 0.01 to 1 μm. In addition, the evaluation indexes Ra (arithmetic average roughness) and Rz (ten-point average roughness) of copper foil surface shape commonly used in the past do not include the length of each mountain shape of the copper foil surface and the unit length due to the calculation principle. Information such as the number of mountain shapes, or the depth of each mountain shape, etc., these indicators are difficult to describe in more detail the influence of the copper foil surface shape on the resin adhesion, heat resistance, and transmission loss for printed wiring boards that require higher performance. To evaluate. Therefore, the conventional copper foil evaluated by the above-mentioned index did not consider the influence of the undulation of the copper foil surface, and there was a problem that sufficient transmission loss characteristics could not be obtained, or sufficient heat resistance could not be obtained.
相對於此,本發明人等對銅箔表面的凹凸進行深入研究,著眼於起伏等較為宏觀的凹凸,而不是過去的固著效應(anchor effect)優秀的微細(微觀的)凹凸,其結果發現採用JIS B0631:2000規定的圖形法確定粗糙度圖形,根據該粗糙度圖形算出的起伏數Wn及粗糙度圖形平均深度R對於例如與 40GHz時等過去情況相比進一步減少高頻區的傳輸損耗、以及提高與樹脂的密接性及耐熱性,顯示出緊密關係。而且基於所述見解,發現使銅箔表面具有數十至數百μm程度的波長較長的起伏,將其深度控制為0.2至1.1μm程度的較淺形狀,可在將起因於銅箔表面粗糙度的傳輸損耗保持為較小的情況下,非常良好地兼顧提高與樹脂層的密接性及耐熱性,從而完成本發明。這種本發明在銅箔的黏合表面上,將上述起伏數Wn及粗糙度圖形平均深度R控制為指定範圍,從而例如在形成印刷配線板時,可提高銅箔與樹脂間的密接性,並抑制傳輸特性的劣化,進而亦可有效抑制加熱時樹脂與樹脂間發生層離。 In contrast, the inventors of the present invention conducted intensive research on the irregularities on the surface of copper foil, focusing on relatively macroscopic irregularities such as undulations, rather than the fine (microscopic) irregularities that are excellent in anchor effect in the past, and found that The roughness pattern is determined by the pattern method specified in JIS B0631: 2000, and the number of undulations Wn and the roughness pattern average depth R calculated from the roughness pattern can further reduce the transmission loss in the high-frequency region compared to the past situation such as at 40 GHz. It also improves the adhesion and heat resistance with the resin, showing a close relationship. Based on these findings, it was found that the copper foil surface has a long wave length of about tens to hundreds of μm, and the depth is controlled to a shallower shape of about 0.2 to 1.1 μm, which can be caused by the rough surface of the copper foil. When the transmission loss of the temperature is kept small, the adhesion to the resin layer and the heat resistance are both improved very well, and the present invention has been completed. This invention controls the number of undulations Wn and the average depth R of the roughness pattern on the bonding surface of the copper foil to a specified range, so that, for example, when a printed wiring board is formed, the adhesion between the copper foil and the resin can be improved, and The deterioration of the transmission characteristics is suppressed, and the delamination between the resin and the resin during heating can also be effectively suppressed.
即,本發明的主要構成如下所示。 That is, the main configuration of the present invention is as follows.
[1]一種銅箔,其特徵在於,採用JIS B0631:2000規定的圖形法確定粗糙度圖形,用根據該粗糙度圖形算出的起伏數Wn及粗糙度圖形平均深度R表示銅箔的黏合表面的特徵時,起伏數Wn為11至30個/mm,且粗糙度圖形平均深度R為0.20至1.10μm。 [1] A copper foil characterized in that the roughness pattern is determined by the pattern method specified in JIS B0631:2000, and the number of undulations Wn and the average depth of the roughness pattern calculated from the roughness pattern are used to represent the bonding surface of the copper foil. In the feature, the number of undulations Wn is 11 to 30/mm, and the average depth R of the roughness pattern is 0.20 to 1.10 μm.
[2]如上述[1]所述的銅箔,其特徵在於,所述起伏數Wn為12至27個/mm,且所述粗糙度圖形平均深度R為0.30至0.90μm。 [2] The copper foil according to the above [1], wherein the number of undulations Wn is 12 to 27/mm, and the average depth R of the roughness pattern is 0.30 to 0.90 μm.
[3]如上述[2]所述的銅箔,其特徵在於,所述起伏數Wn為14至22個/mm,且所述粗糙度圖形平均深度R為0.40至0.80μm。 [3] The copper foil according to the above [2], wherein the number of undulations Wn is 14 to 22/mm, and the average depth R of the roughness pattern is 0.40 to 0.80 μm.
[4]如上述[1]至[3]中任1項所述的銅箔,其特徵在於,所述黏合表面的實測三維表面積相對於投影在平面上測定時 的二維表面積的表面積比為1.05至2.85。 [4] The copper foil according to any one of the above [1] to [3], wherein the surface area ratio of the measured three-dimensional surface area of the bonding surface to the two-dimensional surface area measured on a plane is 1.05 to 2.85.
[5]如上述[4]所述的銅箔,其特徵在於,所述黏合表面的實測三維表面積相對於投影在平面上測定時的二維表面積的表面積比為2.00至2.70。 [5] The copper foil according to the above [4], wherein the surface area ratio of the measured three-dimensional surface area of the bonding surface to the two-dimensional surface area when measured on a flat surface is 2.00 to 2.70.
[6]如上述[1]至[5]中任1項所述的銅箔,其特徵在於,所述銅箔為電解銅箔。 [6] The copper foil according to any one of [1] to [5] above, wherein the copper foil is an electrolytic copper foil.
[7]如上述[1]至[6]中任1項所述的銅箔,其特徵在於,所述黏合表面為粗糙面。 [7] The copper foil according to any one of [1] to [6] above, wherein the bonding surface is a rough surface.
[8]如上述[1]至[7]中任1項所述的銅箔,其特徵在於,所述銅箔為具備銅箔基體、以及在所述黏合表面側的所述銅箔基體的表面上的表面處理層的表面處理銅箔,所述表面處理層含有粗化顆粒層、鎳表面處理層、鋅表面處理層、鉻表面處理層及矽烷耦合劑層的至少1層,所述黏合表面為所述表面處理層的最外層表面。 [8] The copper foil according to any one of [1] to [7] above, wherein the copper foil is provided with a copper foil base and the copper foil base on the bonding surface side. A surface-treated copper foil with a surface treatment layer on the surface, the surface treatment layer contains at least one layer of a roughened particle layer, a nickel surface treatment layer, a zinc surface treatment layer, a chromium surface treatment layer, and a silane coupling agent layer, the bonding The surface is the outermost surface of the surface treatment layer.
[9]如上述[8]所述的銅箔,其特徵在於,所述表面處理層含有所述鎳表面處理層,鎳的附著量為0.010至0.800mg/dm2。 [9] The copper foil according to the above [8], wherein the surface treatment layer contains the nickel surface treatment layer, and the adhesion amount of nickel is 0.010 to 0.800 mg/dm 2 .
[10]如上述[9]所述的銅箔,其特徵在於,所述鎳的附著量為0.020至0.400mg/dm2。 [10] The copper foil according to the above [9], wherein the adhesion amount of the nickel is 0.020 to 0.400 mg/dm 2 .
[11]如上述[8]至[10]中任1項所述的銅箔,其特徵在於,所述表面處理層含有所述鉻表面處理層,鉻的附著量為0.010至0.300mg/dm2。 [11] The copper foil according to any one of [8] to [10] above, wherein the surface treatment layer contains the chromium surface treatment layer, and the adhesion amount of chromium is 0.010 to 0.300 mg/dm 2 .
[12]如上述[11]所述的銅箔,其特徵在於,所述鉻的附著量為0.015至0.200mg/dm2。 [12] The copper foil according to the above [11], wherein the adhesion amount of the chromium is 0.015 to 0.200 mg/dm 2 .
[13]一種覆銅層積板,其具有如上述[1]至[12]中任1項所述的銅箔、以及黏合層壓在所述黏合表面的絕緣基板。 [13] A copper clad laminate comprising the copper foil described in any one of [1] to [12] above, and an insulating substrate adhesively laminated on the adhesive surface.
根據本發明,可提供一種銅箔及具有該銅箔的覆銅層積板,所述銅箔可實現優秀的密接性、傳輸特性及耐熱性。 According to the present invention, it is possible to provide a copper foil and a copper-clad laminate having the copper foil, which can achieve excellent adhesion, transmission characteristics, and heat resistance.
圖1是表示本發明所述銅箔及過去銅箔(先前例A)的粗糙度圖形平均深度R與起伏數Wn的關係的圖表。 FIG. 1 is a graph showing the relationship between the average depth R of the roughness pattern and the number of undulations Wn of the copper foil of the present invention and the conventional copper foil (previous example A).
圖2是表示實施例中進行迴焊耐熱試驗時的試驗片T2的製作步驟的概要剖面圖。 Fig. 2 is a schematic cross-sectional view showing a manufacturing procedure of the test piece T2 when the reflow heat resistance test is performed in the example.
以下,詳細說明本發明的銅箔的較佳實施方式。 Hereinafter, preferred embodiments of the copper foil of the present invention will be described in detail.
本發明所述銅箔的特徵在於,採用JIS B0631:2000規定的圖形法確定粗糙度圖形,用根據該粗糙度圖形算出的起伏數Wn及粗糙度圖形平均深度R表示該銅箔的黏合表面的特徵時,起伏數Wn為11至30個/mm,且粗糙度圖形平均深度R為0.20至1.10μm。 The copper foil of the present invention is characterized in that the roughness pattern is determined by the pattern method specified in JIS B0631: 2000, and the number of undulations Wn calculated from the roughness pattern and the average depth R of the roughness pattern are used to represent the bonding surface of the copper foil. In the feature, the number of undulations Wn is 11 to 30/mm, and the average depth R of the roughness pattern is 0.20 to 1.10 μm.
本發明中,黏合表面是指銅箔的最外層表面,是用於對樹脂基材進行黏合層壓的表面。此外,銅箔的黏合表面是銅箔的至少其中一個表面,亦可以是兩個表面。另外,本發明中,只要沒有特別說明,銅箔包括電解銅箔、壓延銅箔以及對這些銅箔進行過表面處理的表面處理銅箔等。因此,例如在 本發明的銅箔為具備銅箔基體、以及在該銅箔基體的表面上的表面處理層的表面處理銅箔時,該銅箔的黏合表面為表面處理層的最外層表面。 In the present invention, the bonding surface refers to the outermost surface of the copper foil, which is the surface used for bonding and laminating the resin substrate. In addition, the bonding surface of the copper foil is at least one of the surfaces of the copper foil, or both surfaces. In addition, in the present invention, unless otherwise specified, copper foil includes electrolytic copper foil, rolled copper foil, and surface-treated copper foil having surface-treated these copper foils, and the like. Therefore, for example, when the copper foil of the present invention is a surface-treated copper foil including a copper foil base and a surface treatment layer on the surface of the copper foil base, the adhesion surface of the copper foil is the outermost surface of the surface treatment layer.
本發明人等關於銅箔表面的凹凸,著眼於稱為「起伏」的較為宏觀的表面性狀,發現在銅箔的黏合表面控制起伏特性,可實現過去所沒有的高水準傳輸特性及耐熱性,從而完成本發明。 With regard to the unevenness of the copper foil surface, the inventors focused on the macroscopic surface properties called "undulations" and found that controlling the undulation characteristics on the bonding surface of the copper foil can achieve high-level transmission characteristics and heat resistance that were not available in the past. Thus, the present invention has been completed.
本發明中,在對銅箔的黏合表面的起伏進行評估時,引入了JIS B 0631:2000規定的圖形參數。圖形是指被2個局部山夾住的曲線部分,用圖形長度與圖形深度表示。特別是在本發明中,對以後述測定條件測定的粗糙度圖形平均長度AR及粗糙度圖形平均深度R進行評估。 In the present invention, when evaluating the undulation of the bonding surface of the copper foil, the graphic parameters specified in JIS B 0631:2000 are introduced. The graph refers to the part of the curve sandwiched by two partial mountains, which is expressed by graph length and graph depth. In particular, in the present invention, the roughness pattern average length AR and the roughness pattern average depth R measured under the measurement conditions described later are evaluated.
此處,粗糙度圖形平均長度AR是用評估長度求出的粗糙度圖形長度ARi的算術平均值。即,用下述數式(1)表示。 Here, the roughness pattern average length AR is the arithmetic average of the roughness pattern length AR i obtained by the evaluation length. That is, it is represented by the following numerical formula (1).
上述數式(1)中,n為粗糙度圖形的數量(與ARi的數量相等)。此外,粗糙度圖形長度ARi為A以下的長度。 In the above formula (1), n is the number of roughness patterns (equal to the number of AR i). In addition, the roughness pattern length AR i is a length of A or less.
此外,粗糙度圖形平均深度R是用評估長度求出的粗糙度圖形深度Hj的算術平均值。即,用下述數式(2)表示。 In addition, the roughness pattern average depth R is an arithmetic average of the roughness pattern depth H j obtained by the evaluation length. That is, it is represented by the following formula (2).
[數式2]
上述數式(2)中,m為Hj的數量。 In the above formula (2), m is the number of H j.
具體測定按以下條件進行。 The specific measurement was performed under the following conditions.
首先,對銅箔的黏合表面在TD方向(相對於銅箔的長邊方向(與製箔方向對應)的垂直方向)的一定範圍(例如長度50mm的直線範圍)內依據JIS B 0631:2000規定測定粗糙度圖形平均長度AR及粗糙度圖形平均深度R。測定裝置只要是可依據上述JIS規格進行測定的裝置即可,可使用例如表面粗糙度測定機(Surfcorder SE3500,股份公司小坂研究所製)等。此外,測定條件依據上述JIS規格的推薦測定條件,為A=0.1mm、B=0.5mm、ln=3.2mm、λs=2.5μm。 First, the bonding surface of the copper foil is in the TD direction (vertical to the longitudinal direction of the copper foil (corresponding to the foil making direction)) within a certain range (for example, a linear range with a length of 50 mm) in accordance with JIS B 0631: 2000 Measure the average length AR of the roughness pattern and the average depth R of the roughness pattern. The measuring device may be any device capable of measuring in accordance with the above-mentioned JIS standard, and for example, a surface roughness measuring machine (Surfcorder SE3500, manufactured by Kosaka Laboratory Co., Ltd.) or the like can be used. In addition, the measurement conditions are based on the recommended measurement conditions of the above-mentioned JIS standards, and are A=0.1mm, B=0.5mm, ln=3.2mm, and λs=2.5μm.
本發明中,基於以上述條件測定的粗糙度圖形平均長度AR,利用下述式(3)算出起伏數Wn(個/mm)。 In the present invention, the number of undulations Wn (pieces/mm) is calculated by the following formula (3) based on the average length AR of the roughness pattern measured under the above-mentioned conditions.
Wn=1/AR...(3) Wn=1/AR...(3)
根據上述(3)式,算出1mm線上的平均起伏個數。 According to the above formula (3), the average number of fluctuations on the 1mm line is calculated.
本發明的銅箔的黏合表面上,起伏數Wn為11至30個/mm。控制在上述範圍,可實現低傳輸損耗、高密接性及優秀的耐熱性。另一方面,起伏數Wn不足11個/mm時,在樹脂與樹脂界面或樹脂與銅箔界面上無法充分抑制起因於由樹脂產生的排氣(因熱量導致低分子樹脂成分氣化)壓力的層間剝離的傳播,因此電路配線容易從樹脂基材上剝離,成品率(耐熱性)降低。此外,起伏數Wn超過30個/mm時,集膚 效應導致高頻信號容易在銅箔表面流動,信號傳播的路徑長,傳輸損耗增加。特別是從實現優秀的耐熱性及傳輸特性的觀點來看,起伏數Wn較佳為控制在12至27個/mm,更佳為14至22個/mm。 On the bonding surface of the copper foil of the present invention, the number of undulations Wn is 11 to 30/mm. Control in the above range can achieve low transmission loss, high adhesion and excellent heat resistance. On the other hand, when the number of undulations Wn is less than 11/mm, the pressure at the resin-resin interface or the resin-copper foil interface cannot be sufficiently suppressed due to the exhaust gas generated by the resin (vaporization of low-molecular resin components due to heat). Since the delamination between layers spreads, the circuit wiring is easily peeled from the resin substrate, and the yield (heat resistance) is reduced. In addition, when the number of fluctuations Wn exceeds 30/mm, the skin effect causes high-frequency signals to easily flow on the surface of the copper foil, the signal propagation path is long, and the transmission loss increases. In particular, from the viewpoint of achieving excellent heat resistance and transmission characteristics, the number of fluctuations Wn is preferably controlled to be 12 to 27 per mm, and more preferably 14 to 22 per mm.
此外,本發明的銅箔的黏合表面上,粗糙度圖形平均深度R為0.20至1.10μm。通過與起伏數Wn一同控制圖形平均深度R,能夠以超過過去的高水準兼顧傳輸特性與耐熱性。另一方面,粗糙度圖形平均深度R不足0.20μm時,在樹脂與樹脂界面或樹脂與銅箔界面上無法充分抑制起因於由樹脂產生的排氣壓力的層間剝離的傳播,因此電路配線容易從樹脂基材上剝離,成品率(耐熱性)降低。此外,粗糙度圖形平均深度R超過1.10μm時,集膚效應導致高頻信號容易在銅箔表面流動,信號傳播的路徑長,傳輸損耗增加。特別是從實現優秀的耐熱性及傳輸特性的觀點來看,粗糙度圖形平均深度R較佳為控制在0.30至0.90μm,更佳為0.40至0.80μm。 In addition, on the bonding surface of the copper foil of the present invention, the average depth R of the roughness pattern is 0.20 to 1.10 μm. By controlling the average pattern depth R together with the number of undulations Wn, it is possible to achieve both transmission characteristics and heat resistance at a high level beyond the past. On the other hand, when the average depth R of the roughness pattern is less than 0.20 μm, the propagation of delamination caused by the exhaust pressure generated by the resin cannot be sufficiently suppressed at the resin-resin interface or the resin-copper foil interface, so the circuit wiring is likely to be removed from the Peeling from the resin substrate reduces the yield (heat resistance). In addition, when the average depth R of the roughness pattern exceeds 1.10μm, the skin effect causes the high-frequency signal to easily flow on the surface of the copper foil, the signal propagation path is long, and the transmission loss increases. In particular, from the viewpoint of achieving excellent heat resistance and transmission characteristics, the roughness pattern average depth R is preferably controlled to be 0.30 to 0.90 μm, more preferably 0.40 to 0.80 μm.
另外,只要起伏數Wn及粗糙度圖形平均深度R在與樹脂黏合的黏合表面上被控制在上述指定範圍內即可,其他表面的表面性狀可在不影響本發明效果的範圍內適當調節。 In addition, as long as the number of undulations Wn and the average depth R of the roughness pattern are controlled within the specified range on the bonding surface bonded with the resin, the surface properties of other surfaces can be appropriately adjusted within the range that does not affect the effects of the present invention.
此外,本發明的銅箔的黏合表面的實測三維表面積相對於投影在平面上測定時的二維表面積的表面積比較佳為1.05至2.85,更佳為2.00至2.70。這種黏合表面的表面積比用銅箔表面的實測三維表面積A與將其投影在平面上測定時的二維表面積B之間的比率(A/B)表示。此外,三維表面積A例如可使用雷射顯微鏡(VK8500,基恩斯股份公司製)等進 行測定。此外,二維表面積B是從銅箔表面側平面觀察時與三維表面積A的測定範圍對應的面積。 In addition, the measured three-dimensional surface area of the bonding surface of the copper foil of the present invention is preferably 1.05 to 2.85, and more preferably 2.00 to 2.70 relative to the surface area of the two-dimensional surface area when measured on a plane. The surface area ratio of this bonding surface is represented by the ratio (A/B) between the measured three-dimensional surface area A of the copper foil surface and the two-dimensional surface area B when it is projected on a plane and measured. In addition, the three-dimensional surface area A can be measured using, for example, a laser microscope (VK8500, manufactured by Keynes Co., Ltd.). In addition, the two-dimensional surface area B is an area corresponding to the measurement range of the three-dimensional surface area A when viewed in a plane from the surface of the copper foil.
已知通常表面積比越小,集膚效應導致高頻信號在表層部流動的路徑越短,傳輸損耗越小。但是,耐熱試驗中,樹脂與銅箔間或樹脂與樹脂間的接觸面積小,因此存在耐熱性降低的問題。 It is generally known that the smaller the surface area ratio, the shorter the path for high-frequency signals to flow on the surface due to the skin effect, and the smaller the transmission loss. However, in the heat resistance test, the contact area between the resin and the copper foil or between the resin and the resin is small, so there is a problem that the heat resistance is reduced.
相對於此,本發明的銅箔中,如上述所示將黏合表面的起伏特性控制為指定關係,從而將表面積比控制在1.05以上2.85以下,因此起伏的凹部與凸部的高低差小,粗化電鍍處理中的電流密度均勻,在凹部與凸部均勻地形成相同尺寸的粗化顆粒,從而與樹脂的密接力均勻,能夠以傳輸損耗低的狀態提高耐熱性。另一方面,表面積比(A/B)不足1.05時,樹脂與銅箔間或樹脂與樹脂間的接觸面積小,存在耐熱性降低的趨勢。此外,表面積比(A/B)超過2.85時,高頻的流動路徑長,存在傳輸損耗變大的趨勢。 In contrast, in the copper foil of the present invention, the undulation characteristics of the bonding surface are controlled to a predetermined relationship as described above, so that the surface area ratio is controlled to be 1.05 or more and 2.85 or less. Therefore, the height difference between the undulating concave portion and the convex portion is small and thick. The current density in the electroplating process is uniform, and roughened particles of the same size are uniformly formed in the concave and convex portions, so that the adhesive force with the resin is uniform, and the heat resistance can be improved with low transmission loss. On the other hand, when the surface area ratio (A/B) is less than 1.05, the contact area between the resin and the copper foil or between the resin and the resin is small, and the heat resistance tends to decrease. In addition, when the surface area ratio (A/B) exceeds 2.85, the high-frequency flow path is long, and the transmission loss tends to increase.
此外,本發明的銅箔較佳為電解銅箔。為電解銅箔時,光澤面(S面)為與電解滾筒接觸的面,滾筒表面的形狀被複製,該複製形狀的影響容易損害粗化的均勻性。另一方面,粗糙面(亦稱為粗化面,M面)為電解時的電解液側的面,滾筒表面的凹凸已消失,因此具有粗面化處理的均勻性優秀的特徵。因此,電解銅箔中,特別是其粗糙面上,起伏數Wn及粗糙度圖形平均深度R較佳為控制在上述指定的範圍內。 In addition, the copper foil of the present invention is preferably an electrolytic copper foil. In the case of electrolytic copper foil, the glossy surface (S surface) is the surface in contact with the electrolytic drum, and the shape of the drum surface is replicated, and the influence of the replicated shape tends to impair the uniformity of roughening. On the other hand, the rough surface (also referred to as the roughened surface, M surface) is the surface on the electrolyte side during electrolysis, and the unevenness of the surface of the drum has disappeared, so it has a characteristic that the uniformity of the roughening treatment is excellent. Therefore, in the electrolytic copper foil, particularly on the rough surface, the number of undulations Wn and the average depth R of the roughness pattern are preferably controlled within the above-specified range.
此外,本發明的銅箔較佳為具備銅箔基體、以及在黏合表面側的該銅箔基體的表面上的表面處理層的表面處 理銅箔。此外,上述表面處理層較佳為含有粗化顆粒層、鎳表面處理層、鋅表面處理層、鉻表面處理層及矽烷耦合劑層的至少1層,其中,更佳為含有鎳表面處理層及鉻表面處理層的至少其中一個,又更佳為具有由上述各層構成的多層結構。這種表面處理銅箔中,黏合表面為表面處理層的最外層的表面。 In addition, the copper foil of the present invention is preferably a surface-treated copper foil provided with a copper foil base and a surface treatment layer on the surface of the copper foil base on the bonding surface side. In addition, the above-mentioned surface treatment layer preferably contains at least one layer of a roughened particle layer, a nickel surface treatment layer, a zinc surface treatment layer, a chromium surface treatment layer, and a silane coupling agent layer, and more preferably contains a nickel surface treatment layer and At least one of the chromium surface treatment layers more preferably has a multilayer structure composed of the above-mentioned layers. In this surface-treated copper foil, the bonding surface is the surface of the outermost layer of the surface-treated layer.
另外,表面處理層為其處理厚度非常薄的區域,因此不會對黏合表面的起伏數Wn及粗糙度圖形平均深度R造成影響,表面處理銅箔的黏合表面的起伏特性實質上由與該黏合表面對應的銅箔基體的表面的起伏特性決定。因此,表面處理銅箔的銅箔基體較佳為在其黏合表面側的表面上,起伏數Wn為12至85個/mm,且粗糙度圖形平均深度R被控制在0.10至1.50μm。此外,這種銅箔基體可以為電解銅箔及壓延銅箔的任意一個。 In addition, the surface treatment layer is a very thin area, so it will not affect the number of undulations Wn of the bonding surface and the average depth R of the roughness pattern. The undulation characteristics of the bonding surface of the surface-treated copper foil are substantially affected by the bonding surface The undulation characteristics of the surface of the copper foil substrate corresponding to the surface are determined. Therefore, the copper foil base of the surface-treated copper foil is preferably on the surface of the bonding surface side, the number of undulations Wn is 12 to 85/mm, and the average depth R of the roughness pattern is controlled to be 0.10 to 1.50 μm. In addition, the copper foil substrate may be any one of electrolytic copper foil and rolled copper foil.
此外,表面處理層含有粗化顆粒層,從而固著效應導致銅箔與樹脂基材的密接性增高,此外即便迴焊耐熱性試驗中加熱時由樹脂基材產生排氣,但由於銅箔與樹脂基材的密接性高,因而仍然具有抑制膨脹(層間剝離)的效果,耐熱性、特別是迴焊耐熱性得到提高。粗化顆粒層較佳為在銅箔基體的表面上作為粗面化層形成。這種粗化顆粒層具有如上述所示提高密接性及耐熱性的優點。另外,還具有粗化顆粒尺寸變大後因集膚效應的影響而導致傳輸損耗增加的缺點,因此較佳為對粗化顆粒的粒徑進行適當調節。 In addition, the surface treatment layer contains a layer of roughened particles, so that the adhesion effect between the copper foil and the resin substrate increases. In addition, even if the resin substrate generates exhaust gas when heated in the reflow heat resistance test, the copper foil and The adhesiveness of the resin substrate is high, so it still has the effect of suppressing swelling (delamination), and the heat resistance, especially the heat resistance of reflow, is improved. The roughened particle layer is preferably formed as a roughened layer on the surface of the copper foil base. Such a roughened particle layer has the advantages of improving adhesion and heat resistance as described above. In addition, it also has the disadvantage of increasing the transmission loss due to the effect of the skin effect after the size of the roughened particles becomes larger. Therefore, it is preferable to appropriately adjust the particle size of the roughened particles.
此外,表面處理層含有鎳表面處理層、鋅表面處理層及鉻表面處理層的至少1層金屬處理層,從而可防止銅擴 散,更加穩定地維持銅箔與樹脂基材的高度密接性。印刷配線板的製造製程具有樹脂與銅箔的黏合製程、以及焊接製程等伴隨加熱的製程。這些製程所承受的熱量可能使銅擴散至樹脂側,使銅箔與樹脂的密接性降低,但是藉由設置含有鎳及鉻的金屬處理層,可有效防止銅的擴散。此外,上述所示的金屬處理層亦可作為防止銅鏽的防鏽金屬發揮作用。 In addition, the surface treatment layer contains at least one metal treatment layer of a nickel surface treatment layer, a zinc surface treatment layer, and a chromium surface treatment layer, thereby preventing the diffusion of copper and maintaining a high degree of adhesion between the copper foil and the resin substrate more stably. The manufacturing process of the printed wiring board includes a process accompanied by heating, such as a bonding process of resin and copper foil, and a soldering process. The heat received by these processes may cause the copper to diffuse to the resin side and reduce the adhesion between the copper foil and the resin. However, by providing a metal treatment layer containing nickel and chromium, the diffusion of copper can be effectively prevented. In addition, the metal treatment layer shown above can also function as a rust-preventing metal to prevent patina.
鎳表面處理層為含有鎳的金屬處理層,特別佳為在銅箔基體的表面上或上述粗化顆粒層上作為接地層形成。此處,鎳的附著量較佳為0.010至0.800mg/dm2,更佳為0.020至0.400mg/dm2。如上述所示,銅箔基體在黏合表面側的表面上,起伏特性被控制在指定範圍內,起伏的凹凸差被抑制在一定以下,因此進行鍍鎳處理時,可形成具有均勻厚度的鎳層,與過去相比可提高耐熱性。另一方面,鎳附著量不足0.010mg/dm2時,鎳量少,防止銅擴散的效果小,樹脂容易劣化,因此存在耐熱性(樹脂與銅箔)降低的趨勢。此外,鎳附著量超過0.800mg/dm2時,由於鎳與銅相比導電率低,因此存在集膚效應的影響導致傳輸損耗變大的趨勢。 The nickel surface treatment layer is a metal treatment layer containing nickel, and is particularly preferably formed as a ground layer on the surface of the copper foil substrate or on the above-mentioned roughened particle layer. Here, the adhesion amount of nickel is preferably 0.010 to 0.800 mg/dm 2 , more preferably 0.020 to 0.400 mg/dm 2 . As shown above, the undulation characteristics of the copper foil substrate on the bonding surface side are controlled within a specified range, and the unevenness of the undulation is suppressed below a certain level. Therefore, when nickel plating is performed, a nickel layer with a uniform thickness can be formed , Compared with the past, heat resistance can be improved. On the other hand, when the amount of nickel deposited is less than 0.010 mg/dm 2 , the amount of nickel is small, the effect of preventing copper diffusion is small, and the resin is likely to deteriorate, so there is a tendency for heat resistance (resin and copper foil) to decrease. In addition, when the deposited amount of nickel exceeds 0.800 mg/dm 2 , the conductivity of nickel is lower than that of copper, so there is a tendency for the transmission loss to increase due to the influence of the skin effect.
鉻表面處理層為含有鉻的金屬處理層,較佳為在更靠近黏合表面側作為防鏽處理層形成。此處,鉻的附著量較佳為0.010至0.300mg/dm2,更佳為0.015至0.200mg/dm2。如上述所示,銅箔基體在黏合表面側的表面上,起伏特性被控制在指定範圍內,起伏的凹凸差被抑制在一定以下,因此進行鍍鉻處理時,可形成具有均勻厚度的鉻層,與過去相比可提高耐熱性。此外,藉由在表層對鉻進行處理,從而表面被氧化鉻 及氫氧化鉻覆蓋,可得到防鏽效果。另一方面,鉻附著量不足0.010mg/dm2時,鉻量少,防止銅擴散的效果小,樹脂容易劣化,因此存在耐熱性(樹脂與銅箔)降低的趨勢。此外,鉻附著量超過0.300mg/dm2時,由於鉻與銅相比導電率低,因此存在集膚效應的影響導致傳輸損耗變大的趨勢。 The chromium surface treatment layer is a metal treatment layer containing chromium, and is preferably formed as an antirust treatment layer on the side closer to the bonding surface. Here, the adhesion amount of chromium is preferably 0.010 to 0.300 mg/dm 2 , more preferably 0.015 to 0.200 mg/dm 2 . As shown above, the undulation characteristics of the copper foil substrate on the bonding surface side are controlled within the specified range, and the unevenness of the undulation is suppressed below a certain level. Therefore, when the chrome plating process is performed, a chrome layer with a uniform thickness can be formed. Compared with the past, heat resistance can be improved. In addition, by treating the chromium on the surface layer, the surface is covered with chromium oxide and chromium hydroxide, and the rust prevention effect can be obtained. On the other hand, when the chromium adhesion amount is less than 0.010 mg/dm 2 , the amount of chromium is small, the effect of preventing the diffusion of copper is small, and the resin is easily deteriorated, so there is a tendency for heat resistance (resin and copper foil) to decrease. In addition, when the adhesion amount of chromium exceeds 0.300 mg/dm 2 , since chromium has a lower conductivity than copper, there is a tendency for the transmission loss to increase due to the influence of the skin effect.
鋅表面處理層為含有鋅的金屬處理層,特別佳為在鎳表面處理層與鉻表面處理層之間作為耐熱處理層形成。此處,鋅的附著量較佳為0.005至0.500mg/dm2,更佳為0.010至0.400mg/dm2。具有這種鋅表面處理層,從而擁有加熱時防止變色、防鏽效果、提高耐熱性等優點。 The zinc surface treatment layer is a metal treatment layer containing zinc, and is particularly preferably formed as a heat-resistant treatment layer between the nickel surface treatment layer and the chromium surface treatment layer. Here, the adhesion amount of zinc is preferably 0.005 to 0.500 mg/dm 2 , more preferably 0.010 to 0.400 mg/dm 2 . With this zinc surface treatment layer, it has the advantages of preventing discoloration during heating, anti-rust effect, and improving heat resistance.
矽烷耦合劑層具有使銅箔與樹脂基材化學結合的效果,較佳為作為表面處理層的最外層形成。此處,矽烷的附著量換算為矽(Si)原子,較佳為0.0002至0.0300mg/dm2,更佳為0.0005至0.0100mg/dm2。具有這種矽烷耦合劑層,可進一步提高銅箔與樹脂基材的密接性。 The silane coupling agent layer has the effect of chemically bonding the copper foil and the resin substrate, and is preferably formed as the outermost layer of the surface treatment layer. Here, in terms of silicon (Si) atoms, the adhesion amount of silane is preferably 0.0002 to 0.0300 mg/dm 2 , more preferably 0.0005 to 0.0100 mg/dm 2 . Having such a silane coupling agent layer can further improve the adhesion between the copper foil and the resin substrate.
另外,上述鎳、鉻、鋅及矽烷的附著量可藉由螢光X射線分析進行測定。具體測定條件在後述實施例處進行說明。 In addition, the adhesion amount of the above-mentioned nickel, chromium, zinc, and silane can be measured by fluorescent X-ray analysis. The specific measurement conditions will be described in Examples described later.
本發明的銅箔可合適地用作覆銅層積板。覆銅層積板較佳為具有本發明的銅箔、以及黏合層壓在該黏合表面的絕緣基板。這種覆銅層積板可製作高耐熱密接性及高頻傳輸特性優秀的電路基板,具有優秀的效果。作為絕緣基板,例如可列舉出可撓性樹脂基板或剛性樹脂基板等。此外,本發明的覆銅層積板特別可合適地用作印刷配線板。 The copper foil of the present invention can be suitably used as a copper-clad laminate. The copper clad laminate preferably has the copper foil of the present invention and an insulating substrate adhesively laminated on the adhesive surface. This type of copper clad laminate can produce circuit boards with high heat resistance and excellent high-frequency transmission characteristics, and has excellent effects. As an insulating substrate, a flexible resin substrate, a rigid resin substrate, etc. are mentioned, for example. In addition, the copper-clad laminated board of the present invention can be suitably used as a printed wiring board in particular.
接著,說明本發明的銅箔的較佳製造方法。 Next, a preferable manufacturing method of the copper foil of the present invention will be explained.
以下,以電解銅箔(或表面處理電解銅箔)為例,說明銅箔的製造方法的一例。 Hereinafter, an example of the manufacturing method of copper foil is demonstrated using electrolytic copper foil (or surface-treated electrolytic copper foil) as an example.
(1)製箔 (1) Foil making
電解銅箔通過如下方法製造:將硫酸-硫酸銅水溶液作為電解液,向用鉑族元素或其氧化物元素被覆的鈦所組成的不溶性陽極、及與該陽極相向設置的鈦製陰極滾筒之間供應該電解液,通過一邊以固定速度使陰極滾筒旋轉,一邊在兩極間通入直流電流,從而在陰極滾筒表面上析出銅,將所析出的銅從陰極滾筒表面剝離,並連續捲繞。 The electrolytic copper foil is manufactured by the following method: a sulfuric acid-copper sulfate aqueous solution is used as an electrolyte, and an insoluble anode composed of titanium coated with a platinum group element or its oxide element is placed between an insoluble anode made of titanium and a titanium cathode roller arranged opposite to the anode. The electrolyte is supplied, and a direct current is applied between the two electrodes while rotating the cathode drum at a constant speed, thereby depositing copper on the surface of the cathode drum, peeling the deposited copper from the surface of the cathode drum, and continuously winding it.
通常推測起伏數Wn及粗糙度圖形平均深度R依賴於電解液的組成(例如添加成分及各種成分的濃度等)及電解條件(例如電流密度、液溫、流速等)。特別是在過去普通的電解液中,作為硫酸及硫酸銅以外的電解液的添加成分,例如一直使用3-巰基-1-丙磺酸鈉(MPS)、羥乙基纖維素(HEC)、低分子量膠(PBF)、氯(Cl,例如用NaCl添加)等。但是,本發明人等對電解液的組成與起伏的關係進行研究後,得知利用含有上述所示添加劑的電解液製造電解銅箔時,如圖1的先前例A所示,減少粗糙度圖形平均深度R後,起伏數Wn增加,無法充分提高傳輸損耗特性。 It is generally estimated that the number of undulations Wn and the average depth R of the roughness pattern depend on the composition of the electrolyte (for example, the concentration of added components and various components) and the electrolysis conditions (for example, current density, liquid temperature, flow rate, etc.). In particular, in the past common electrolytes, as additive components of electrolytes other than sulfuric acid and copper sulfate, for example, sodium 3-mercapto-1-propanesulfonate (MPS), hydroxyethyl cellulose (HEC), low Molecular weight glue (PBF), chlorine (Cl, such as NaCl added) and so on. However, the inventors of the present invention have studied the relationship between the composition of the electrolyte and the fluctuations, and found that when the electrolyte containing the above-mentioned additives is used to produce electrolytic copper foil, as shown in the previous example A of FIG. 1, the roughness pattern is reduced. After the average depth R, the number of fluctuations Wn increases, and the transmission loss characteristics cannot be sufficiently improved.
因此,進一步開展研究後,得知除了上述添加劑外,進一步添加檸檬酸鈉、氨基磺酸、氨水等具有通過與銅離子形成錯合物來提高電鍍過電壓的效果的添加劑,從而能夠以粗糙度圖 形平均深度R低的狀態減少起伏數Wn(圖1的本發明)。發生這種現象的原理尚不明確,但可以推測檸檬酸鈉、氨基磺酸、氨水與銅離子形成錯合物後,導致電鍍過電壓上升,其結果電鍍處理的均勻性增加,起伏數W減少。 Therefore, after further research, it is found that in addition to the above-mentioned additives, additives such as sodium citrate, sulfamic acid, ammonia water, etc., which have the effect of forming complexes with copper ions to increase the electroplating overvoltage, can be used to improve the roughness. The state where the average pattern depth R is low reduces the number of fluctuations Wn (the present invention in FIG. 1). The principle of this phenomenon is not clear, but it can be inferred that sodium citrate, sulfamic acid, ammonia water and copper ions form complexes, resulting in an increase in electroplating overvoltage, as a result, the uniformity of the electroplating treatment increases, and the number of fluctuations W decreases. .
基於上述見解,本發明中,較佳為適當調節用於製箔的電解液的組成。以下示出適用於本發明的電解銅箔製造的電解液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Based on the above findings, in the present invention, it is preferable to appropriately adjust the composition of the electrolytic solution used for foil production. Examples of the composition and electrolysis conditions of the electrolytic solution applied to the production of the electrolytic copper foil of the present invention are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(製箔條件) (Foil-making conditions)
五水硫酸銅…換算為銅(原子),較佳為60至110g/L,更佳為60至90g/L Copper sulfate pentahydrate... converted to copper (atoms), preferably 60 to 110 g/L, more preferably 60 to 90 g/L
硫酸…較佳為40至135g/L,更佳為40至80g/L Sulfuric acid...preferably 40 to 135g/L, more preferably 40 to 80g/L
MPS…較佳為1至10mg/L,更佳為2至3mg/L MPS...preferably 1 to 10 mg/L, more preferably 2 to 3 mg/L
HEC…較佳為1至7mg/L,更佳為1至2mg/L HEC...preferably 1 to 7 mg/L, more preferably 1 to 2 mg/L
PBF…較佳為3至9mg/L,更佳為3至4mg/L PBF...preferably 3 to 9 mg/L, more preferably 3 to 4 mg/L
檸檬酸鈉…較佳為0至40g/L,更佳為20至40g/L Sodium citrate...preferably 0-40g/L, more preferably 20-40g/L
氨基磺酸…較佳為0至30g/L,更佳為10至20g/L Sulfamic acid...preferably 0 to 30 g/L, more preferably 10 to 20 g/L
氨水(氨濃度30質量%)…較佳為0至35g/L,更佳為10至25g/L Ammonia (ammonia concentration 30% by mass)...preferably 0 to 35 g/L, more preferably 10 to 25 g/L
氯(Cl,作為NaCl)…較佳為15至60mg/L,更佳為30至40mg/L Chlorine (Cl, as NaCl)...preferably 15 to 60 mg/L, more preferably 30 to 40 mg/L
電流密度…較佳為35至60A/dm2,更佳為40至50A/dm2 Current density...preferably 35 to 60 A/dm 2 , more preferably 40 to 50 A/dm 2
液溫…較佳為40至65℃,更佳為50至60℃ Liquid temperature...preferably 40 to 65°C, more preferably 50 to 60°C
箔厚…較佳為6至100μm,更佳為6至65μm Foil thickness...preferably 6 to 100μm, more preferably 6 to 65μm
(2)勻化處理 (2) Homogenization treatment
關於如上述所示製造而成的電解銅箔,對進一步適度減少起伏數Wn的方法進行深入研究後,發現使用勻化效果(減少銅箔表面凹凸的處理)強的電解浴,用脈衝電流進行電解,從而可使起伏數Wn達到適度的值。 Regarding the electrolytic copper foil manufactured as described above, after intensive research on the method to further moderately reduce the number of undulations Wn, it was found that an electrolytic bath with a strong leveling effect (treatment to reduce irregularities on the surface of the copper foil) was used for pulse current. Electrolysis can make the number of fluctuations Wn reach an appropriate value.
作為用於這種勻化效果強的電解浴的硫酸及硫酸銅以外的電解液的添加成分,可列舉出低分子量膠(PBF)、香豆素、1,4-丁炔二醇等。另外,如果勻化效果過強,則存在迴焊耐熱性降低的趨勢,因此較佳為與迴焊耐熱性保持均衡來適當調節勻化效果。 As an additive component of the electrolytic solution other than sulfuric acid and copper sulfate used in the electrolytic bath with such a strong homogenization effect, low molecular weight gum (PBF), coumarin, 1,4-butynediol, and the like can be cited. In addition, if the leveling effect is too strong, the reflow heat resistance tends to decrease. Therefore, it is preferable to maintain a balance with the reflow heat resistance and adjust the leveling effect appropriately.
此外,關於利用脈衝電流的電解,較佳為將脈衝逆電解時間(trev)設定得比脈衝順電解時間(ton)長,此外將脈衝順電流密度(Ion)設定得比脈衝逆電流密度(Irev)高。此處順電流為銅箔表面被電鍍的陰極反應,逆電流為銅箔表面被溶解的陽極反應。推測在脈衝電流中將銅箔表面溶解的逆電流的比率設置得較高,從而銅箔表面的起伏的凹凸被適度溶解,可得到具有適度起伏數Wn的銅箔。 In addition, regarding electrolysis using pulse current, it is preferable to set the pulse reverse electrolysis time (t rev ) to be longer than the pulse forward electrolysis time (t on ), and to set the pulse forward current density (I on ) to be longer than the pulse reverse current The density (I rev ) is high. Here, the forward current is the cathodic reaction of the surface of the copper foil being electroplated, and the reverse current is the anodic reaction of the surface of the copper foil being dissolved. It is estimated that the ratio of the reverse current that dissolves the surface of the copper foil is set high in the pulse current, so that the undulations on the surface of the copper foil are appropriately dissolved, and a copper foil having a moderate number of undulations Wn can be obtained.
基於上述見解,本發明中,較佳為適當調節用於勻化處理的電解液的組成及脈衝電流。以下示出適用於本發明的勻化處理的電解液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Based on the above findings, in the present invention, it is preferable to appropriately adjust the composition and pulse current of the electrolytic solution used for the homogenization treatment. Examples of the composition and electrolysis conditions of the electrolytic solution suitable for the homogenization treatment of the present invention are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(勻化處理條件) (Homogenization treatment conditions)
五水硫酸銅…換算為銅(原子),較佳為40至80g/L,更佳為60至75g/L Copper sulfate pentahydrate... converted to copper (atoms), preferably 40 to 80 g/L, more preferably 60 to 75 g/L
硫酸…較佳為60至125g/L,更佳為100至120g/L Sulfuric acid...preferably 60 to 125g/L, more preferably 100 to 120g/L
PBF…較佳為0至800mg/L,更佳為300至500mg/L PBF...preferably 0 to 800mg/L, more preferably 300 to 500mg/L
香豆素…較佳為0至4g/L,更佳為2.5至3.0g/L Coumarin...preferably 0 to 4g/L, more preferably 2.5 to 3.0g/L
1,4-丁炔二醇…較佳為0至3g/L,更佳為1.0至2.0g/L 1,4-Butynediol...preferably 0 to 3g/L, more preferably 1.0 to 2.0g/L
氯(Cl,作為NaCl)…較佳為20至55mg/L,更佳為30至40mg/L Chlorine (Cl, as NaCl)...preferably 20 to 55 mg/L, more preferably 30 to 40 mg/L
電解時間…較佳為3至25秒,更佳為5至20秒 Electrolysis time... preferably 3 to 25 seconds, more preferably 5 to 20 seconds
液溫…較佳為30至70℃,更佳為50至60℃ Liquid temperature...preferably 30 to 70°C, more preferably 50 to 60°C
<脈衝條件> <Pulse condition>
脈衝順電解時間(ton)…較佳為0至30毫秒,更佳為0至10毫秒 Pulse electrolysis time (t on )...preferably 0 to 30 milliseconds, more preferably 0 to 10 milliseconds
脈衝逆電解時間(trev)…較佳為50至600毫秒,更佳為200至300毫秒 Pulse reverse electrolysis time (t rev )...preferably 50 to 600 milliseconds, more preferably 200 to 300 milliseconds
脈衝電解停止時間(toff)…較佳為0至40毫秒,更佳為20至30毫秒 Pulse electrolysis stop time (t off )...preferably 0 to 40 milliseconds, more preferably 20 to 30 milliseconds
脈衝順電流密度(Ion)…較佳為0至10A/dm2,更佳為0至6A/dm2 Pulse current density (I on )...preferably 0 to 10A/dm 2 , more preferably 0 to 6A/dm 2
脈衝逆電流密度(Irev)…較佳為-15至-50A/dm2,更佳為-20至-30A/dm2 Pulse reverse current density (I rev )...preferably -15 to -50A/dm 2 , more preferably -20 to -30A/dm 2
(3)表面處理 (3) Surface treatment
進而,如上述所示製作而成的電解銅箔可作為銅箔基體使用,可在其粗糙面上根據需要適當形成粗面化層、接 地層、耐熱處理層及防鏽處理層等的表面處理層,亦可作為表面處理電解銅箔。另外,這些表面處理層不會對上述電解銅箔的粗糙面的起伏特性造成影響,表面處理電解銅箔的最外層表面的起伏特性實質上與作為銅箔基體使用的電解銅箔的粗糙面的起伏特性相同。此外,表面處理層並不限定於上述處理層,可適當組合其一部分或全部,亦可與上述以外的處理層組合。 Furthermore, the electrolytic copper foil produced as described above can be used as a copper foil substrate, and surface treatments such as a roughened layer, a ground layer, a heat-resistant treatment layer, and a rust-proof treatment layer can be appropriately formed on the roughened surface as required. The layer can also be used as a surface-treated electrolytic copper foil. In addition, these surface treatment layers will not affect the undulation characteristics of the rough surface of the above-mentioned electrolytic copper foil, and the undulation characteristics of the outermost surface of the surface-treated electrolytic copper foil are substantially the same as those of the rough surface of the electrolytic copper foil used as the copper foil substrate. The fluctuation characteristics are the same. In addition, the surface treatment layer is not limited to the above-mentioned treatment layer, and a part or all of them may be appropriately combined, and may be combined with treatment layers other than the above.
此處,粗面化層可利用眾所周知的方法形成,較佳為利用例如電鍍進行,更佳為利用兩階段粗化電鍍處理進行。這種粗化電鍍處理可利用眾所周知的方法適當調節而進行。 Here, the roughening layer can be formed by a well-known method, for example, it is preferable to carry out by electroplating, and it is more preferable to carry out by a two-stage roughening electroplating process. This roughening plating treatment can be performed by appropriately adjusting it by a well-known method.
以下示出粗化電鍍處理用電鍍液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Examples of the composition and electrolysis conditions of the plating solution for roughening plating are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(粗化電鍍處理(1)的條件) (Conditions for roughening plating treatment (1))
五水硫酸銅…換算為銅(原子),較佳為5至30g/L,更佳為10至20g/L Copper sulfate pentahydrate... converted to copper (atoms), preferably 5 to 30 g/L, more preferably 10 to 20 g/L
硫酸…較佳為100至150g/L,更佳為130至140g/L Sulfuric acid...preferably 100 to 150g/L, more preferably 130 to 140g/L
鉬酸銨…換算為鉬(原子),較佳為1至6g/L,更佳為2至4g/L Ammonium molybdate... converted to molybdenum (atom), preferably 1 to 6 g/L, more preferably 2 to 4 g/L
七水硫酸鈷…換算為鈷(原子),較佳為1至5g/L,更佳為2至3g/L Cobalt sulfate heptahydrate... converted to cobalt (atom), preferably 1 to 5 g/L, more preferably 2 to 3 g/L
七水硫酸亞鐵…換算為鐵(原子),較佳為0.05至5.0g/L, 更佳為0.1至1.5g/L Ferrous sulfate heptahydrate... converted to iron (atom), preferably 0.05 to 5.0 g/L, more preferably 0.1 to 1.5 g/L
電流密度…較佳為15至50A/dm2,更佳為20至40A/dm2 Current density...preferably 15 to 50 A/dm 2 , more preferably 20 to 40 A/dm 2
電解時間…較佳為1至80秒,更佳為1至60秒 Electrolysis time...preferably 1 to 80 seconds, more preferably 1 to 60 seconds
液溫…較佳為20至50℃,更佳為30至40℃ Liquid temperature...preferably 20 to 50°C, more preferably 30 to 40°C
(粗化電鍍處理(2)的條件) (Conditions for roughening plating treatment (2))
五水硫酸銅…換算為銅(原子),較佳為10至80g/L,更佳為13至72g/L Copper sulfate pentahydrate... converted to copper (atoms), preferably 10 to 80 g/L, more preferably 13 to 72 g/L
硫酸…較佳為20至150g/L,更佳為26至133g/L Sulfuric acid...preferably 20 to 150g/L, more preferably 26 to 133g/L
電流密度…較佳為2至70A/dm2,更佳為3至67A/dm2 Current density...preferably 2 to 70A/dm 2 , more preferably 3 to 67A/dm 2
電解時間…較佳為1至80秒,更佳為1至60秒 Electrolysis time...preferably 1 to 80 seconds, more preferably 1 to 60 seconds
液溫…較佳為15至75℃,更佳為18至67℃ Liquid temperature...preferably 15 to 75°C, more preferably 18 to 67°C
此外,接地層例如可列舉出含有藉由鍍鎳處理形成的鎳的鎳表面處理層、以及藉由銅鋅類合金電鍍處理、銅鎳類合金電鍍處理形成的接地層等。這些電鍍處理可利用眾所周知的方法適當調節而進行。 In addition, the ground layer includes, for example, a nickel surface treatment layer containing nickel formed by a nickel plating treatment, a ground layer formed by a copper-zinc alloy electroplating treatment, a copper-nickel alloy electroplating treatment, and the like. These electroplating treatments can be appropriately adjusted and performed by a well-known method.
以下示出鍍鎳處理用電鍍液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Examples of the composition and electrolysis conditions of the plating solution for nickel plating are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(鍍鎳的條件) (Conditions for nickel plating)
硫酸鎳…換算為鎳(原子),較佳為3.0至7.0g/L,更佳為4.0至6.0g/L Nickel sulfate... converted to nickel (atoms), preferably 3.0 to 7.0 g/L, more preferably 4.0 to 6.0 g/L
過硫酸銨…較佳為30.0至50.0g/L,更佳為35.0至45.0g/L Ammonium persulfate...preferably 30.0 to 50.0 g/L, more preferably 35.0 to 45.0 g/L
硼酸…較佳為20.0至35.0g/L,更佳為25.0至30.0g/L Boric acid...preferably 20.0 to 35.0g/L, more preferably 25.0 to 30.0g/L
電流密度…較佳為0.5至4.0A/dm2,更佳為1.0至2.5A/dm2 Current density...preferably 0.5 to 4.0 A/dm 2 , more preferably 1.0 to 2.5 A/dm 2
電解時間…較佳為1至80秒,更佳為1至60秒 Electrolysis time...preferably 1 to 80 seconds, more preferably 1 to 60 seconds
液pH…較佳為3.5至4.0,更佳為3.7至3.9 Liquid pH...preferably 3.5 to 4.0, more preferably 3.7 to 3.9
液溫…較佳為25至35℃,更佳為26至30℃ Liquid temperature...preferably 25 to 35°C, more preferably 26 to 30°C
作為耐熱處理層,例如可列舉出藉由鋅表面處理層形成的耐熱處理層等,所述鋅表面處理層含有藉由鍍鋅處理形成的鋅。這些電鍍處理可利用眾所周知的方法適當調節而進行。 As the heat-resistant treatment layer, for example, a heat-resistant treatment layer formed by a zinc surface treatment layer containing zinc formed by a zinc plating treatment, and the like can be cited. These electroplating treatments can be appropriately adjusted and performed by a well-known method.
以下示出鍍鋅處理用電鍍液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Examples of the composition and electrolysis conditions of the plating solution for galvanizing treatment are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(鍍鋅的條件) (Conditions for galvanizing)
七水硫酸鋅…換算為鋅(原子),較佳為1至40g/L,更佳為1至30g/L Zinc sulfate heptahydrate... converted to zinc (atom), preferably 1 to 40 g/L, more preferably 1 to 30 g/L
氫氧化鈉…較佳為8至350g/L,更佳為10至300g/L Sodium hydroxide...preferably 8 to 350g/L, more preferably 10 to 300g/L
電流密度…較佳為0.1至15A/dm2,更佳為0.1至10A/dm2 Current density...preferably 0.1 to 15A/dm 2 , more preferably 0.1 to 10A/dm 2
電解時間…較佳為1至80秒,更佳為1至60秒 Electrolysis time...preferably 1 to 80 seconds, more preferably 1 to 60 seconds
液溫…較佳為5至80℃,更佳為5至60℃ Liquid temperature...preferably 5 to 80°C, more preferably 5 to 60°C
作為防鏽處理層,例如可列舉出含有藉由鍍鉻處理形成的鉻的鉻表面處理層(無機防鏽層)、藉由苯並三唑處理等有機防鏽處理形成的有機防鏽層、以及藉由矽烷耦合劑處理形成的防鏽層等。這些電鍍處理可利用眾所周知的方法適當 調節而進行。 As the anti-rust treatment layer, for example, a chromium surface treatment layer (inorganic anti-rust layer) containing chromium formed by chromium plating treatment, an organic anti-rust layer formed by organic anti-rust treatment such as benzotriazole treatment, and Anti-rust layer formed by silane coupling agent treatment, etc. These electroplating treatments can be appropriately adjusted by well-known methods.
鍍鉻處理藉由以下方法進行處理:將CrO3或K2Cr2O7等溶解到水中調製出水溶液,在該水溶液中浸漬銅箔後水洗並乾燥,或者在水溶液中將銅箔作為陰極進行電解後水洗並乾燥。 The chromium plating treatment is performed by the following methods: dissolving CrO 3 or K 2 Cr 2 O 7 in water to prepare an aqueous solution, immersing the copper foil in the aqueous solution, washing and drying, or electrolyzing the copper foil as a cathode in the aqueous solution After washing and drying.
以下示出鍍鉻處理用電鍍液的組成及電解條件的示例。另外,下述條件為較佳示例,在不影響本發明的效果的範圍內,可根據需要適當變更及調節添加劑的種類及用量、電解條件。 Examples of the composition and electrolysis conditions of the plating solution for chromium plating are shown below. In addition, the following conditions are preferred examples, and the type and amount of additives, and electrolysis conditions can be appropriately changed and adjusted as needed within a range that does not affect the effects of the present invention.
(鍍鉻的條件) (Conditions for chrome plating)
鉻酸酐(CrO3)‥換算為鉻(原子),較佳為0.5至1.5g/L,更佳為0.8至1.1g/L Chromic anhydride (CrO 3 )‥ converted to chromium (atoms), preferably 0.5 to 1.5 g/L, more preferably 0.8 to 1.1 g/L
電流密度…較佳為0.3至0.6A/dm2,更佳為0.4至0.6A/dm2 Current density...preferably 0.3 to 0.6 A/dm 2 , more preferably 0.4 to 0.6 A/dm 2
電解時間…較佳為1至80秒,更佳為1至60秒 Electrolysis time...preferably 1 to 80 seconds, more preferably 1 to 60 seconds
液pH…較佳為2.2至2.8,更佳為2.3至2.6 Liquid pH...preferably 2.2 to 2.8, more preferably 2.3 to 2.6
液溫…較佳為15至50℃,更佳為20至40℃ Liquid temperature...preferably 15 to 50°C, more preferably 20 to 40°C
苯並三唑處理藉由以下方法進行處理:將苯並三唑或苯並三唑衍生物溶解到有機溶劑或水中,在該溶液中浸漬銅箔後進行乾燥。 The benzotriazole treatment is performed by the following method: dissolving benzotriazole or a benzotriazole derivative in an organic solvent or water, immersing copper foil in the solution, and drying.
此外,矽烷耦合劑處理藉由以下方法進行處理:將矽烷耦合劑溶解到有機溶劑或水中,在該溶液中浸漬銅箔或在銅箔上塗佈該溶液後進行乾燥。作為此處使用的矽烷耦合劑,可列舉出乙烯矽烷、環氧矽烷、苯乙烯矽烷、甲基丙烯酸矽烷、丙烯酸矽烷、氨基矽烷、醯脲矽烷、巰基矽烷、硫化物 矽烷、異氰酸酯矽烷等。 In addition, the silane coupling agent treatment is performed by the following method: dissolving the silane coupling agent in an organic solvent or water, immersing copper foil in the solution or coating the solution on the copper foil and then drying. Examples of the silane coupling agent used here include vinyl silane, epoxy silane, styrene silane, methacrylic silane, acrylic silane, amino silane, urea silane, mercapto silane, sulfide silane, isocyanate silane, and the like.
進而,上述鉻酸鹽處理、苯並三唑處理、矽烷耦合劑處理可適當組合進行。 Furthermore, the above-mentioned chromate treatment, benzotriazole treatment, and silane coupling agent treatment can be appropriately combined.
以上對本發明的實施方式進行了說明,但上述實施方式只不過是本發明的一例。本發明包含本發明概念及申請專利範圍中所含的所有方式,在本發明的範圍內可進行各種變形。例如,上述中對電解銅箔的製造方法進行了詳細說明,但製作本發明的銅箔的方法並不限定於上述方法。即,銅箔的黏合表面的特徵只要被控制在本發明的正確範圍內,則可以為壓延銅箔(或表面處理壓延銅箔),亦可以為藉由其他製造方法製作而成的銅箔。 The embodiment of the present invention has been described above, but the above-mentioned embodiment is only an example of the present invention. The present invention includes the concept of the present invention and all the modes included in the scope of the patent application, and various modifications can be made within the scope of the present invention. For example, the manufacturing method of electrolytic copper foil was demonstrated in detail in the above, but the method of manufacturing the copper foil of this invention is not limited to the said method. That is, as long as the characteristics of the bonding surface of the copper foil are controlled within the correct range of the present invention, it may be rolled copper foil (or surface-treated rolled copper foil), or may be copper foil produced by other manufacturing methods.
實施例 Example
以下基於實施例進一步詳細說明本發明,以下為本發明的一例。 Hereinafter, the present invention will be described in further detail based on examples, and the following is an example of the present invention.
(實施例1至24及比較例1至20) (Examples 1 to 24 and Comparative Examples 1 to 20)
[1]製箔 [1] foil making
首先,以表1所示的電解液的組成及電解條件對電解銅箔進行製箔。此時,對實施例1至21以及比較例19及20事先調節箔厚而進行製箔,以便在以下進行的勻化處理後使銅箔的厚度為18μm。此外,對比較例1至18未進行勻化處理,因此在此時進行製箔,以便使箔厚為18μm。此外實施例24作為銅箔使用如下壓延銅箔,所述壓延銅箔由無氧壓延銅A組成,以厚度17.8μm、表面粗度為JIS-B-0601規定的表面粗糙度Rz的0.7μm、且溫度為25度的狀態進行拉伸試驗時的延 伸率為6.0%。 First, the electrolytic copper foil was made into a foil with the composition of the electrolyte solution shown in Table 1 and the electrolysis conditions. At this time, the foil thicknesses of Examples 1 to 21 and Comparative Examples 19 and 20 were adjusted in advance to make the foil so that the thickness of the copper foil was 18 μm after the leveling treatment performed below. In addition, since the homogenization treatment was not performed on Comparative Examples 1 to 18, the foil was made at this time so that the thickness of the foil was 18 μm. In addition, Example 24 used the following rolled copper foil as the copper foil. The rolled copper foil was composed of oxygen-free rolled copper A, with a thickness of 17.8 μm and a surface roughness of 0.7 μm of the surface roughness Rz specified in JIS-B-0601. In addition, the elongation rate when the tensile test was performed at a temperature of 25 degrees was 6.0%.
另外,表1中,「Cu」表示換算為銅原子而投入的五水硫酸銅,「MPS」表示3-巰基-1-丙磺酸鈉,「HEC」表示羥乙基纖維素,「PBF」表示低分子量膠,「氨水」表示濃度30質量%的氨水,「Cl」表示作為氯化鈉添加的氯成分,「SPS」表示4-苯乙烯磺酸鈉,「DDAC」表示二烯丙基二甲基氯化銨聚合物(以下表2及表3中相同)。 In addition, in Table 1, "Cu" means copper sulfate pentahydrate converted into copper atoms, "MPS" means sodium 3-mercapto-1-propanesulfonate, "HEC" means hydroxyethyl cellulose, "PBF" Means low molecular weight glue, "ammonia" means ammonia with a concentration of 30% by mass, "Cl" means chlorine added as sodium chloride, "SPS" means sodium 4-styrene sulfonate, and "DDAC" means diallyl two Methylammonium chloride polymer (the same in Table 2 and Table 3 below).
[2]勻化處理 [2] Homogenization
實施例1至21、比較例19及20中,對上述[1]後的電解銅箔以及實施例24的壓延銅箔,進一步以表2所示的電解液的組成及電解條件進行勻化處理,形成勻化層。形成勻化層後的銅箔的箔厚為18μm。 In Examples 1 to 21 and Comparative Examples 19 and 20, the electrolytic copper foil after the above [1] and the rolled copper foil of Example 24 were further homogenized according to the composition and electrolysis conditions of the electrolyte shown in Table 2. , Form a homogenization layer. The thickness of the copper foil after forming the leveling layer was 18 μm.
[3]粗面化層(粗化顆粒層)的形成 [3] Formation of roughened layer (roughened particle layer)
.粗化電鍍處理(1) . Roughening plating treatment (1)
以上述[1]及[2]得到的銅箔作為基體,在其粗糙面上進行粗化電鍍處理。此時,電鍍液的組成及電解條件為表3所示的條件。另外,實施例21及比較例13中,未進行粗化電鍍處理(1)。 The copper foil obtained in the above [1] and [2] was used as a substrate, and the roughened surface was subjected to a roughening plating treatment. At this time, the composition of the plating solution and the electrolysis conditions are the conditions shown in Table 3. In addition, in Example 21 and Comparative Example 13, the roughening plating treatment (1) was not performed.
另外,表3中,「Mo」表示換算為鉬原子而投入的鉬酸銨,「Co」表示換算為鈷原子而投入的七水硫酸鈷,「Fe」表示換算為鐵原子而投入的七水硫酸亞鐵。 In addition, in Table 3, "Mo" represents ammonium molybdate converted to molybdenum atoms, "Co" represents cobalt sulfate heptahydrate converted to cobalt atoms, and "Fe" represents heptahydrate converted to iron atoms. Ferrous sulfate.
.粗化電鍍處理(2) . Roughening plating treatment (2)
然後,對上述粗化電鍍處理(1)後的銅箔基體的表面(粗糙面)進一步進行粗化電鍍處理(2)。此時,電鍍液的組成及電解條件如下所示。另外,實施例21及比較例13中,未進行粗化電鍍處理(1)。 Then, the surface (rough surface) of the copper foil base body after the roughening plating treatment (1) is further subjected to a roughening plating treatment (2). At this time, the composition and electrolysis conditions of the plating solution are as follows. In addition, in Example 21 and Comparative Example 13, the roughening plating treatment (1) was not performed.
<粗化電鍍(2)條件> <Roughening plating (2) conditions>
五水硫酸銅……‥換算為銅(原子),65.0g/L Copper sulfate pentahydrate......‥Converted to copper (atom), 65.0g/L
硫酸………….108g/L sulfuric acid…………. 108g/L
液溫………….56℃ Liquid temperature…………. 56°C
電流密度………‥4A/dm2 Current density………‥4A/dm 2
電解時間………‥1至20秒 Electrolysis time…………‥1-20 seconds
[4]含鎳接地層(鎳表面處理層)的形成 [4] Formation of nickel-containing ground layer (nickel surface treatment layer)
接著,在上述粗面化層上通過電解電鍍形成作為耐熱處理層基底的接地層。此時,鍍鎳條件如下所示。另外,實施例12及實施例20中,未進行鎳處理。 Next, a ground layer as a base of the heat-resistant treatment layer is formed by electrolytic plating on the above-mentioned roughened layer. At this time, the nickel plating conditions are as follows. In addition, in Example 12 and Example 20, nickel treatment was not performed.
<鍍鎳條件> <Nickel plating conditions>
硫酸鎳………換算為鎳(原子),5.0g/L Nickel sulphate…………Converted to nickel (atom), 5.0g/L
過硫酸銨……40.0g/L Ammonium persulfate……40.0g/L
硼酸…………28.5g/L Boric acid…………28.5g/L
液溫………….28.5℃ Liquid temperature…………. 28.5°C
液pH…………3.8 Liquid pH…………3.8
電流密度………‥1.5A/dm2 Current density………‥1.5A/dm 2
電解時間………‥1至20秒 Electrolysis time…………‥1-20 seconds
[5]含鋅耐熱處理層(鋅表面處理層)的形成 [5] Formation of zinc-containing heat-resistant treatment layer (zinc surface treatment layer)
然後,在上述接地層上通過電解電鍍形成耐熱處 理層(鋅的附著量:0.05mg/dm2)。此時,鍍鋅條件如下所示。另外,實施例20未進行鋅處理。 Then, a heat-resistant treatment layer (amount of zinc adhesion: 0.05 mg/dm 2 ) was formed on the ground layer by electrolytic plating. At this time, the galvanizing conditions are as follows. In addition, Example 20 was not subjected to zinc treatment.
<鍍鋅條件> <Galvanizing conditions>
七水硫酸鋅…….換算為鋅(原子),10g/L Zinc Sulfate Heptahydrate.... Converted to zinc (atom), 10g/L
氫氧化鈉…….50g/L Sodium hydroxide.... 50g/L
液溫………….32℃ Liquid temperature…………. 32°C
電流密度………‥5.0A/dm2 Current density………‥5.0A/dm 2
電解時間………‥1至20秒 Electrolysis time…………‥1-20 seconds
[6]含鉻防鏽處理層(鉻表面處理層)的形成 [6] Formation of chromium-containing antirust treatment layer (chromium surface treatment layer)
進而,在上述耐熱處理層上通過電解電鍍形成防鏽處理層。此時,鍍鉻條件如下所示。另外,實施例16及20中,未進行鉻處理。 Furthermore, an anti-corrosion treatment layer is formed by electrolytic plating on the heat-resistant treatment layer. At this time, the chrome plating conditions are as follows. In addition, in Examples 16 and 20, chromium treatment was not performed.
<鍍鉻條件> <Chrome plating conditions>
鉻酸酐(CrO3)….換算為鉻(原子),0.9g/L Chromic anhydride (CrO 3 ).... Converted to chromium (atoms), 0.9g/L
液溫………….32.0℃ Liquid temperature…………. 32.0°C
液pH…………2.5 Liquid pH…………2.5
電流密度………‥0.5A/dm2 Current density………‥0.5A/dm 2
電解時間………‥1至20秒 Electrolysis time…………‥1-20 seconds
[7]矽烷耦合劑層的形成 [7] Formation of silane coupling agent layer
最後在上述防鏽處理層上塗佈濃度0.7質量%的3-甲基丙烯醯氧丙基三甲氧基矽烷水溶液,使其乾燥,形成矽烷耦合劑層(矽烷的附著量換算為矽原子,0.0070mg/dm2)。 Finally, an aqueous solution of 3-methacryloxypropyltrimethoxysilane with a concentration of 0.7% by mass was coated on the anti-rust treatment layer and dried to form a silane coupling agent layer (the adhesion amount of silane is converted to silicon atoms, 0.0070 mg/dm 2 ).
(評估) (Evaluate)
對上述實施例及比較例所述銅箔進行下述所示的 測定及評估。各評估條件如下所述。結果如表4所示。 The copper foils described in the above examples and comparative examples were subjected to the following measurements and evaluations. Each evaluation condition is as follows. The results are shown in Table 4.
另外,在以下測定中,銅箔的黏合表面為銅箔最外層即矽烷耦合劑層的表面(作為基體的電解銅箔的粗糙面側最外層表面)。表4中,表面處理層(i)由粗化顆粒層、鎳表面處理層、鋅表面處理層、鉻表面處理層及矽烷耦合劑層組成,表面處理層(ii)由鎳表面處理層、鋅表面處理層、鉻表面處理層及矽烷耦合劑層組成,表面處理層(iii)由粗化顆粒層、鋅表面處理層、鉻表面處理層及矽烷耦合劑層組成,表面處理層(iv)由粗化顆粒層、鎳表面處理層、鋅表面處理層及矽烷耦合劑層組成,表面處理層(v)由粗化顆粒層及矽烷耦合劑層組成。 In addition, in the following measurement, the adhesion surface of the copper foil is the surface of the silane coupling agent layer which is the outermost layer of the copper foil (the surface of the outermost layer on the rough surface side of the electrolytic copper foil as a base). In Table 4, the surface treatment layer (i) consists of a roughened particle layer, a nickel surface treatment layer, a zinc surface treatment layer, a chromium surface treatment layer and a silane coupling agent layer, and the surface treatment layer (ii) consists of a nickel surface treatment layer, zinc Surface treatment layer, chromium surface treatment layer and silane coupling agent layer. Surface treatment layer (iii) is composed of roughened particle layer, zinc surface treatment layer, chromium surface treatment layer and silane coupling agent layer. Surface treatment layer (iv) consists of The roughened particle layer, the nickel surface treatment layer, the zinc surface treatment layer and the silane coupling agent layer are composed, and the surface treatment layer (v) is composed of the roughened particle layer and the silane coupling agent layer.
[1]起伏數Wn [1] Number of fluctuations Wn
對銅箔的黏合表面依據JIS B 0631:2000的規定測定粗糙度圖形平均長度AR(mm)。測定在各銅箔的任意5處進行,將其平均值(N=5)作為各銅箔的粗糙度圖形平均長度AR。此外,測定裝置使用表面粗糙度測定機(Surfcorder SE3500,股份公司小坂研究所製),測定條件為A=0.1mm、B=0.5mm、In=3.2mm、λs=2.5μm,測定範圍在TD方向(相對於銅箔的長邊方向(與製膜方向對應)的垂直方向)上為長度50mm的範圍。根據所測定的粗糙度圖形平均長度AR算出1mm線上的平均起伏個數(1/AR)作為起伏數Wn(個/mm)。 For the bonding surface of the copper foil, the average length of the roughness pattern AR (mm) was measured in accordance with JIS B 0631: 2000. The measurement was performed at five arbitrary locations of each copper foil, and the average value (N=5) was used as the average length AR of the roughness pattern of each copper foil. In addition, the measuring device uses a surface roughness measuring machine (Surfcorder SE3500, manufactured by Kosaka Laboratory Co., Ltd.), and the measuring conditions are A=0.1mm, B=0.5mm, In=3.2mm, λs=2.5μm, and the measuring range is in the TD direction. (The vertical direction with respect to the longitudinal direction of the copper foil (corresponding to the film forming direction)) is a range of 50 mm in length. From the measured average length AR of the roughness pattern, the average number of undulations (1/AR) on the 1 mm line is calculated as the number of undulations Wn (number/mm).
[2]粗糙度圖形平均深度R [2] Average depth of roughness graph R
對銅箔的黏合表面依據JIS B 0631:2000的規定測定粗糙度圖形平均深度R(μm)。測定在各銅箔的任意5處進行,將其平均值(N=5)作為各銅箔的粗糙度圖形平均深度R。 此外,測定裝置使用表面粗糙度測定機(Surfcorder SE3500,股份公司小坂研究所製),測定條件為A=0.1mm、B=0.5mm、In=3.2mm、λs=2.5μm,測定範圍在TD方向(相對於銅箔的長邊方向(與製膜方向對應)的垂直方向)上為長度50mm的範圍。 On the bonding surface of the copper foil, the average depth R (μm) of the roughness pattern was measured in accordance with JIS B 0631:2000. The measurement was performed at five arbitrary locations of each copper foil, and the average value (N=5) was used as the average depth R of the roughness pattern of each copper foil. In addition, the measuring device uses a surface roughness measuring machine (Surfcorder SE3500, manufactured by Kosaka Laboratory Co., Ltd.), and the measuring conditions are A=0.1mm, B=0.5mm, In=3.2mm, λs=2.5μm, and the measuring range is in the TD direction. (The vertical direction with respect to the longitudinal direction of the copper foil (corresponding to the film forming direction)) is a range of 50 mm in length.
[3]接觸式粗糙度Rz、Ra [3] Contact roughness Rz, Ra
對銅箔的黏合表面依據JIS B 0601:1994的規定測定十點平均粗糙度Rz(μM)及算術平均粗糙度Ra(μM)。測定在各銅箔的任意5處進行,將其平均值(n=5)分別作為各銅箔的十點平均粗糙度Rz及算術平均粗糙度Ra。此外,測定裝置使用接觸式表面粗糙度測定機(SE1700,股份公司小坂研究所製)。測定條件為測定長度4.8mm、取樣長度4.8mm、切斷值0.8mm。 The ten-point average roughness Rz (μM) and the arithmetic average roughness Ra (μM) of the bonding surface of the copper foil were measured in accordance with JIS B 0601:1994. The measurement was performed at five arbitrary locations of each copper foil, and the average value (n=5) was used as the ten-point average roughness Rz and the arithmetic average roughness Ra of each copper foil, respectively. In addition, as the measuring device, a contact surface roughness measuring machine (SE1700, manufactured by Kosaka Laboratory Co., Ltd.) was used. The measurement conditions are a measurement length of 4.8 mm, a sampling length of 4.8 mm, and a cut value of 0.8 mm.
[4]非接觸式粗糙度Rz、Ra [4] Non-contact roughness Rz, Ra
除了作為測定裝置使用非接觸式鐳射顯微鏡(VK8500,基恩斯股份公司製)以外,與上述[3]接觸式粗糙度的情況相同,測定銅箔的黏合表面的十點平均粗糙度Rz(μm)及算術平均粗糙度Ra(μm)。 Except that a non-contact laser microscope (VK8500, manufactured by Keynes Co., Ltd.) was used as a measuring device, the ten-point average roughness Rz (μm) and Arithmetic average roughness Ra (μm).
[5]表面積比A/B [5] Surface area ratio A/B
在銅箔的黏合表面上,使用鐳射顯微鏡(VK8500,基恩斯股份公司製),測定三維表面積(μm2)。測定在各銅箔的任意5處進行,將其平均值(N=5)作為各銅箔的三維表面積。另外,測定視野為30.0μm×44.9μm的範圍,將此作為與三維表面積對應的二維表面積。根據所測定的三維表面積A、以及 與其對應的二維表面積B算出表面積比(三維表面積A/二維表面積B)。 On the bonding surface of the copper foil, a laser microscope (VK8500, manufactured by Keynes Co., Ltd.) was used to measure the three-dimensional surface area (μm 2 ). The measurement was performed at five arbitrary locations of each copper foil, and the average value (N=5) was used as the three-dimensional surface area of each copper foil. In addition, the measurement field of view was a range of 30.0 μm×44.9 μm, and this was regarded as the two-dimensional surface area corresponding to the three-dimensional surface area. The surface area ratio (three-dimensional surface area A/two-dimensional surface area B) is calculated from the measured three-dimensional surface area A and the corresponding two-dimensional surface area B.
[6]鎳、鋅、鉻及矽烷的附著量 [6] Adhesion amount of nickel, zinc, chromium and silane
測定鎳、鋅、鉻及矽烷的附著量。測定使用螢光X射線分析裝置(ZSXPrimus,理學股份公司製),以分析徑:Φ35mm進行分析。另外,鋅與矽烷的附著量如上述所示。 Measure the adhesion amount of nickel, zinc, chromium and silane. A fluorescent X-ray analyzer (ZSX Primus, manufactured by Rigaku Co., Ltd.) was used for the measurement, and the analysis was performed with an analysis diameter of Φ35 mm. In addition, the adhesion amount of zinc and silane is as described above.
[7]傳輸損耗 [7] Transmission loss
在銅箔的黏合表面接合樹脂基材,製作出傳輸特性測定用基板樣品。樹脂基材使用市售的聚苯醚類樹脂(超低傳輸損耗多層基板材料MEGTRON6,松下股份公司製),接合時的硬化溫度為210℃,硬化時間為2小時。傳輸損耗測定用基板的結構採用微帶線結構,將其調節為導體長度400mm、導體厚度18μm、導體寬度0.14mm、整體厚度0.31mm,特性阻抗為50Ω。對如上述所示調節而成的測定用樣品,使用向量網路分析儀E8363B(KEYSIGHT TECHNOLOGIES),測定10GHz及40GHz的傳輸損耗。另外,評估結果中,單位採用dB/m,示出將以導體長度400mm測定的傳輸損耗換算為導體長度1000mm的傳輸損耗值(以導體長度400mm測定的傳輸損耗的值乘以2.5)的值。本實施例中,10GHz時將傳輸損耗19.5dB/m以下設為合格水平,40GHz時將傳輸損耗66.0dB/m以下設為合格水平。 A resin substrate was bonded to the bonding surface of the copper foil to produce a sample of a substrate for measuring transmission characteristics. The resin substrate uses a commercially available polyphenylene ether resin (ultra-low transmission loss multilayer substrate material MEGTRON6, manufactured by Panasonic Corporation), the curing temperature during bonding is 210°C, and the curing time is 2 hours. The structure of the substrate for transmission loss measurement adopts a microstrip line structure, which is adjusted to a conductor length of 400mm, a conductor thickness of 18μm, a conductor width of 0.14mm, an overall thickness of 0.31mm, and a characteristic impedance of 50Ω. For the measurement sample adjusted as described above, the vector network analyzer E8363B (KEYSIGHT TECHNOLOGIES) was used to measure the transmission loss at 10 GHz and 40 GHz. In addition, the evaluation result uses dB/m as the unit, and shows a value obtained by converting the transmission loss measured with a conductor length of 400 mm into a transmission loss value with a conductor length of 1000 mm (the value of the transmission loss measured with a conductor length of 400 mm multiplied by 2.5). In this embodiment, the transmission loss of 19.5 dB/m or less at 10 GHz is set as the passing level, and the transmission loss of 66.0 dB/m or less at 40 GHz is set as the passing level.
[8]迴焊耐熱性 [8] Reflow heat resistance
圖2示出迴焊耐熱試驗的試驗片T2的製作步驟的概略圖。首先,如圖2(a)所示,準備市售的聚苯醚類樹脂(超 低傳輸損耗多層基板材料MEGTRON6,松下股份公司製)作為第一樹脂基材B1,在B1的兩面層壓黏合本實施例或比較例所述的各銅箔M1,製作出覆銅層積板P。接著,如圖2(b)所示,利用氯化銅溶液對覆銅層積板P進行蝕刻,將全部銅箔部分M1溶解。其後,通過在經過蝕刻的第一樹脂基材(樹脂芯板層)B1的兩面層壓黏合第二樹脂基材B2(圖2(c)),進而在兩面的第二樹脂基材(預浸坯料層)B2上層壓黏合本實施例或比較例所述的各銅箔M2,從而製作出用於測定迴焊耐熱性的試驗片T2(100mm×100mm)(圖2(d))。試驗片按各銅箔分別製作5個。接著,使所製作的試驗片T2通過最高溫度260℃、加熱時間10秒鐘的迴焊爐,肉眼觀察銅箔與樹脂(M2-B2)或樹脂與樹脂(B2-B1)的各層間上是否發生膨脹(層間剝離)。其後,除去在銅箔與樹脂及樹脂與樹脂的兩者上均觀察到層間剝離的試驗片T2,將其他試驗片T2再次通過上述加熱條件的迴焊爐,反覆通過迴焊爐並觀察層間剝離,直至銅箔與樹脂及樹脂與樹脂的兩者的層間均觀察到膨脹。而且,對銅箔與樹脂及樹脂與樹脂的各層間,測定發生層間剝離時的迴焊爐通過次數。該測定對各銅箔分別施用5個試驗片,將各自迴焊爐通過次數的平均值(N=5)作為各銅箔的迴焊耐熱性進行評估。此處,銅箔與樹脂間的迴焊耐熱性表示銅箔與預浸坯料層的接合部的耐熱性,此外樹脂與樹脂間的迴焊耐熱性表示芯板層與預浸坯料層的接合部的耐熱性,迴焊爐的通過次數越多,表示兩者各自的耐熱性越優秀。本實施例中,對於銅箔與樹脂及樹脂與樹脂的各層間,將直至觀察到層間剝離為止的迴焊爐通過次 數8次以上的設為合格水平。 FIG. 2 shows a schematic diagram of the manufacturing procedure of the test piece T2 of the reflow heat resistance test. First, as shown in Figure 2(a), prepare a commercially available polyphenylene ether resin (ultra-low transmission loss multilayer substrate material MEGTRON6, manufactured by Panasonic Corporation) as the first resin substrate B1, and laminate and bond on both sides of B1 Each copper foil M1 described in the present embodiment or the comparative example produces a copper-clad laminate P. Next, as shown in FIG. 2(b), the copper-clad laminate P is etched with a copper chloride solution to dissolve all the copper foil portions M1. Thereafter, by laminating and bonding the second resin substrate B2 on both sides of the etched first resin substrate (resin core layer) B1 (Figure 2(c)), the second resin substrate (pre- The dipping material layer) B2 was laminated and bonded to each of the copper foils M2 described in the present example or the comparative example to produce a test piece T2 (100mm×100mm) for measuring the reflow heat resistance (FIG. 2(d)). Five test pieces were made for each copper foil. Next, pass the manufactured test piece T2 through a reflow oven with a maximum temperature of 260°C and a heating time of 10 seconds, and visually observe whether the copper foil and resin (M2-B2) or resin and resin (B2-B1) are on each layer. Swelling (peeling between layers) occurs. After that, the test piece T2 where interlayer peeling was observed on both the copper foil and the resin and the resin and the resin was removed, and the other test pieces T2 were passed through the reflow furnace under the above heating conditions again, and the reflow furnace was repeatedly passed through the reflow furnace to observe the interlayer Peeling was performed until swelling was observed between the layers of both the copper foil and the resin and the resin and the resin. In addition, the number of passes through the reflow furnace when interlayer peeling occurred was measured between the copper foil and the resin and between the resin and the resin layers. In this measurement, 5 test pieces were applied to each copper foil, and the average value (N=5) of the number of passes of each reflow furnace was evaluated as the reflow heat resistance of each copper foil. Here, the reflow heat resistance between the copper foil and the resin means the heat resistance of the joint between the copper foil and the prepreg layer, and the reflow heat resistance between the resin and the resin means the joint between the core layer and the prepreg layer For the heat resistance, the more passes through the reflow furnace, the better the heat resistance of the two. In this embodiment, the number of passes through the reflow furnace until the interlayer peeling is observed for 8 or more times of the copper foil and the resin and between the resin and the resin layers is regarded as an acceptable level.
[9]密接強度(剝離強度) [9] Adhesion strength (peel strength)
在銅箔的黏合表面接合樹脂基材,製作出測定用樣品。樹脂基材使用市售的聚苯醚類樹脂(超低傳輸損耗多層基板材料MEGTRON6,松下股份公司製),接合時的硬化溫度為210℃,硬化時間為1小時。將所製作的測定用樣品蝕刻加工成寬度10mm的電路配線,利用雙面膠將樹脂側固定在不鏽鋼板上,以50mm/分鐘的速度將電路配線沿90度方向剝離,測定剝離強度(kN/m)作為密接強度的指標。測定使用萬能材料試驗機(Tensilon,A&D股份公司製)進行。本實施例中,將剝離強度(初期密接性)0.4kN/m以上設為合格水平。 The resin substrate was bonded to the bonding surface of the copper foil to produce a sample for measurement. The resin substrate uses a commercially available polyphenylene ether resin (ultra-low transmission loss multilayer substrate material MEGTRON6, manufactured by Panasonic Corporation), the curing temperature during bonding is 210°C, and the curing time is 1 hour. The prepared measurement sample was etched into circuit wiring with a width of 10 mm, the resin side was fixed to a stainless steel plate with double-sided tape, the circuit wiring was peeled in a 90-degree direction at a speed of 50 mm/min, and the peel strength (kN/ m) As an index of adhesion strength. The measurement was performed using a universal material testing machine (Tensilon, manufactured by A&D Co., Ltd.). In this example, the peel strength (initial adhesiveness) of 0.4 kN/m or more was set as the pass level.
如表4所示,可確認,實施例1至24所述的銅箔在與樹脂基材的黏合表面上,起伏數Wn被控制在11至30個/mm,且粗糙度圖形平均深度R被控制在0.20至1.10μm,所述銅箔傳輸損耗低,迴焊耐熱性優秀,且可發揮高密接強度。 As shown in Table 4, it can be confirmed that the number of undulations Wn on the bonding surface of the copper foil with the resin substrate of the examples 1 to 24 is controlled at 11 to 30 per mm, and the average depth R of the roughness pattern is controlled by Controlled at 0.20 to 1.10 μm, the copper foil has low transmission loss, excellent reflow heat resistance, and can exhibit high adhesion strength.
相對於此,可確認,比較例1至20所述的銅箔在與樹脂基材的黏合表面上,起伏數Wn未被控制在11至30個 /mm、或者粗糙度圖形平均深度R未被控制在0.20至1.10μm、又或者兩者均未被控制,因此與實施例1至24所述的銅箔相比,傳輸損耗、迴焊耐熱性及密接強度中的任意1個以上較差。 In contrast, it can be confirmed that the number of undulations Wn of the copper foils of Comparative Examples 1 to 20 on the bonding surface with the resin substrate is not controlled at 11 to 30/mm, or the average depth R of the roughness pattern is not It is controlled to 0.20 to 1.10 μm, or both are not controlled. Therefore, compared with the copper foil described in Examples 1 to 24, any one or more of transmission loss, reflow heat resistance, and adhesion strength is inferior.
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US10581081B1 (en) | 2019-02-01 | 2020-03-03 | Chang Chun Petrochemical Co., Ltd. | Copper foil for negative electrode current collector of lithium ion secondary battery |
WO2020162068A1 (en) * | 2019-02-04 | 2020-08-13 | パナソニックIpマネジメント株式会社 | Surface-treated copper foil, and copper-clad laminate plate, resin-attached copper foil and circuit board each using same |
TWI731330B (en) | 2019-04-30 | 2021-06-21 | 南亞塑膠工業股份有限公司 | Electrolytic copper foil, method for producing the same, and lithium ion secondary battery |
CN113795615B (en) * | 2019-06-07 | 2024-08-02 | 古河电气工业株式会社 | Surface-treated copper foil, copper-clad laminate, and printed circuit board |
CN112921371A (en) * | 2021-01-21 | 2021-06-08 | 江苏铭丰电子材料科技有限公司 | Surface roughening and curing treatment method of RTF copper foil for high-frequency copper-clad plate |
TWI756155B (en) * | 2021-07-19 | 2022-02-21 | 長春石油化學股份有限公司 | Surface-treated copper foil and copper clad laminate |
CN116083972B (en) * | 2022-12-09 | 2023-08-18 | 浙江花园新能源股份有限公司 | Production process of reverse copper foil with low roughness and high peel strength, product and application thereof |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201511621A (en) * | 2013-07-23 | 2015-03-16 | Jx Nippon Mining & Metals Corp | Treated surface copper foil, copper foil with carrier, substrate, resin substrate, printed circuit board, copper clad laminate, and printed circuit board manufacturing method |
TW201515533A (en) * | 2013-08-20 | 2015-04-16 | Jx Nippon Mining & Metals Corp | Surface treated copper foil, copper foil with a carrier, laminate, printed wiring board, electronic machine, and method of manufacturing printed wiring board |
TW201531173A (en) * | 2013-08-20 | 2015-08-01 | Jx Nippon Mining & Metals Corp | Surface-treated copper foil, and laminate, copper foil, printed wiring board and electronic device using the same, and method of manufacturing printed wiring board |
WO2015146981A1 (en) * | 2014-03-25 | 2015-10-01 | 古河電気工業株式会社 | Copper alloy sheet material, connector, and method for manufacturing copper alloy sheet material |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3081026B2 (en) | 1991-07-18 | 2000-08-28 | 古河サーキットフォイル株式会社 | Electrolytic copper foil for printed wiring boards |
JPH09272994A (en) | 1996-04-05 | 1997-10-21 | Furukawa Electric Co Ltd:The | Electrolytic copper foil for fine pattern |
JP3739929B2 (en) * | 1998-03-09 | 2006-01-25 | 古河サーキットフォイル株式会社 | Copper foil for printed wiring board and method for producing the same |
JP3477460B2 (en) | 2001-07-11 | 2003-12-10 | 三井金属鉱業株式会社 | Laminated film for COF and COF film carrier tape |
TW200404484A (en) * | 2002-09-02 | 2004-03-16 | Furukawa Circuit Foil | Copper foil for soft circuit board package module, for plasma display, or for radio-frequency printed circuit board |
JP2004119961A (en) * | 2002-09-02 | 2004-04-15 | Furukawa Techno Research Kk | Copper foil for chip-on-film, plasma display, or high-frequency printed wiring board |
JP4087369B2 (en) * | 2003-11-11 | 2008-05-21 | 古河サーキットフォイル株式会社 | Ultra-thin copper foil with carrier and printed wiring board |
US20050158574A1 (en) * | 2003-11-11 | 2005-07-21 | Furukawa Circuit Foil Co., Ltd. | Ultra-thin copper foil with carrier and printed wiring board using ultra-thin copper foil with carrier |
TW200535259A (en) * | 2004-02-06 | 2005-11-01 | Furukawa Circuit Foil | Treated copper foil and circuit board |
JP2007009261A (en) * | 2005-06-29 | 2007-01-18 | Hitachi Cable Ltd | Copper foil for printed wiring board and method for producing the same |
JP4851264B2 (en) * | 2005-08-30 | 2012-01-11 | 古河電気工業株式会社 | POLYMER FILM, PROCESS FOR PRODUCING THE SAME, AND LAMINATE FOR WIRING BOARD |
JP4660819B2 (en) | 2005-12-15 | 2011-03-30 | 福田金属箔粉工業株式会社 | Copper foil for flexible printed wiring boards for COF |
TWI414638B (en) * | 2006-06-07 | 2013-11-11 | Furukawa Electric Co Ltd | A method for manufacturing a surface-treated electrolytic copper foil, and a circuit board |
JP5137341B2 (en) | 2006-06-27 | 2013-02-06 | 古河電気工業株式会社 | Surface treated copper foil |
JP5129642B2 (en) * | 2007-04-19 | 2013-01-30 | 三井金属鉱業株式会社 | Surface treated copper foil, copper clad laminate obtained using the surface treated copper foil, and printed wiring board obtained using the copper clad laminate |
JP5271668B2 (en) * | 2008-10-31 | 2013-08-21 | 株式会社オハラ | Metal / water battery or metal / air battery |
JP5136383B2 (en) * | 2008-12-15 | 2013-02-06 | 日立電線株式会社 | Rolled copper foil for printed wiring boards |
JP2011162860A (en) * | 2010-02-12 | 2011-08-25 | Furukawa Electric Co Ltd:The | Surface-roughened copper foil, method of producing the same and copper-clad laminate plate |
CN101906630B (en) * | 2010-08-03 | 2011-08-10 | 山东金宝电子股份有限公司 | Black surface treatment process of electrolytic copper foil |
CN101935856B (en) * | 2010-08-03 | 2012-03-21 | 山东金宝电子股份有限公司 | Back face treatment process of electrolytic copper foil |
CN102021576B (en) * | 2010-09-30 | 2012-06-27 | 深圳市信诺泰创业投资企业(普通合伙) | Method for continuously producing flexible copper clad laminates |
JP5497808B2 (en) | 2012-01-18 | 2014-05-21 | Jx日鉱日石金属株式会社 | Surface-treated copper foil and copper-clad laminate using the same |
CN102560584B (en) * | 2012-02-14 | 2014-06-11 | 联合铜箔(惠州)有限公司 | Additive for electrolytic copper foil and surface treatment process of very low profile electrolytic copper foil |
CN102586831B (en) * | 2012-03-12 | 2014-11-19 | 山东金宝电子股份有限公司 | Surface treatment process for reducing roughness of electrolytic copper foil |
WO2013144992A1 (en) * | 2012-03-26 | 2013-10-03 | 日本化薬株式会社 | Copper-clad laminate having primer layer and wiring board using same |
JP5475897B1 (en) | 2012-05-11 | 2014-04-16 | Jx日鉱日石金属株式会社 | Surface-treated copper foil and laminate using the same, copper foil, printed wiring board, electronic device, and method for manufacturing printed wiring board |
KR20150032307A (en) * | 2012-07-13 | 2015-03-25 | 후루카와 덴키 고교 가부시키가이샤 | Current collector foil, electrode structure, lithium secondary cell, or electric double-layer capacitor |
WO2014081041A1 (en) * | 2012-11-26 | 2014-05-30 | Jx日鉱日石金属株式会社 | Surface-treated electrolytic copper foil, laminate, and printed circuit board |
JP5510533B1 (en) * | 2012-12-17 | 2014-06-04 | Jfeスチール株式会社 | Press forming method |
JP2014152343A (en) * | 2013-02-05 | 2014-08-25 | Sh Copper Products Corp | Composite copper foil and production method thereof |
CN104120471B (en) * | 2013-04-26 | 2018-06-08 | Jx日矿日石金属株式会社 | High-frequency circuit copper foil, copper-clad plate, printing distributing board, the copper foil with carrier, electronic equipment and printing distributing board manufacturing method |
JP6166614B2 (en) * | 2013-07-23 | 2017-07-19 | Jx金属株式会社 | Surface-treated copper foil, copper foil with carrier, substrate, printed wiring board, printed circuit board, copper-clad laminate, and printed wiring board manufacturing method |
CN103361707B (en) * | 2013-08-05 | 2016-07-13 | 昆山市华新电路板有限公司 | The electroplating clamp of thin PCB |
-
2017
- 2017-09-08 KR KR1020197010108A patent/KR102274906B1/en active Active
- 2017-09-08 CN CN201780051185.0A patent/CN109642338B/en active Active
- 2017-09-08 JP JP2018504310A patent/JP6479254B2/en active Active
- 2017-09-08 WO PCT/JP2017/032411 patent/WO2018047933A1/en active Application Filing
- 2017-09-12 TW TW106131202A patent/TWI735651B/en active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201511621A (en) * | 2013-07-23 | 2015-03-16 | Jx Nippon Mining & Metals Corp | Treated surface copper foil, copper foil with carrier, substrate, resin substrate, printed circuit board, copper clad laminate, and printed circuit board manufacturing method |
TW201515533A (en) * | 2013-08-20 | 2015-04-16 | Jx Nippon Mining & Metals Corp | Surface treated copper foil, copper foil with a carrier, laminate, printed wiring board, electronic machine, and method of manufacturing printed wiring board |
TW201531173A (en) * | 2013-08-20 | 2015-08-01 | Jx Nippon Mining & Metals Corp | Surface-treated copper foil, and laminate, copper foil, printed wiring board and electronic device using the same, and method of manufacturing printed wiring board |
WO2015146981A1 (en) * | 2014-03-25 | 2015-10-01 | 古河電気工業株式会社 | Copper alloy sheet material, connector, and method for manufacturing copper alloy sheet material |
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WO2018047933A1 (en) | 2018-03-15 |
KR20190049818A (en) | 2019-05-09 |
CN109642338B (en) | 2021-02-09 |
TW201825717A (en) | 2018-07-16 |
JP6479254B2 (en) | 2019-03-06 |
KR102274906B1 (en) | 2021-07-09 |
JPWO2018047933A1 (en) | 2018-09-06 |
CN109642338A (en) | 2019-04-16 |
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