TWI714366B - Etching machine structure with the vertical position dynamically adjustable of the coil - Google Patents

Abstract

The present invention provides an etching machine structure with the vertical position dynamically adjustable of the coil comprising: a first plasma reactor having a first reaction chamber; a plurality of first lift modules, and each of the first lift modules having: a first support member located at the periphery of the first reaction chamber; and a plurality of first lifting members coupled to the first support member for sliding up and down; and a first coil module fixed to the first lifting member. By the practice of the present invention, the cleaning of deposits at different portions of the reaction chamber wall can be dynamically performed.

Description

Etching machine structure capable of dynamically adjusting the vertical position of the coil

The present invention is an etching machine structure whose coil vertical position can be dynamically adjusted, and is particularly an etching machine structure whose coil vertical position can be dynamically adjusted in a semiconductor etching process.

For Inductively Coupled Plasma (ICP), the position and length of the coil are very important. Once the length and position of the coil are fixed, it will not change. Therefore, the uniformity of plasma concentration, the distribution of electron temperature, and the location and extent of local damage to the reaction chamber will be fixed.

As shown in Figure 1, when the etching machine is used for a period of time, on the wall of the reaction chamber, there will be polymer deposition after plasma reaction (the dark area in the figure), and related polymer deposition , It will cause distortion of the process parameters in the reaction chamber. In addition, when the thickness of the polymer deposit gradually increases, the level of the impurity particles in the reaction chamber will also increase, which will seriously affect the yield.

In the conventional inductively coupled plasma etcher, especially when dry clean is used, since the position of the coil is fixed at the same position, the part where the polymer is removed (the light-colored area in the figure) is also affected. Due to restrictions, the reaction chamber cannot be effectively cleaned.

The present invention is an etching machine structure capable of dynamically adjusting the vertical position of the coil, which is mainly to solve the problem of how to effectively complete the cleaning of deposits on the wall of the reaction chamber by adjusting the position of the dynamic coil.

The present invention provides an etching machine structure with a dynamically adjustable vertical position of a coil, which includes: a first plasma reaction chamber having a first reaction chamber; a plurality of first lifting modules, and each first lifting module The module has: a first support member which is fixed around the periphery of the first reaction chamber; and a plurality of first lifting members which are slidably connected to the first support member up and down; and a The first coil module is fixed to the first lifting member.

Through the implementation of the present invention, at least the following advanced effects can be achieved: 1. The reaction chamber can be dynamically cleaned of sediments on different wall positions. 2. The level of impurity particles in the reaction chamber can be reduced.

In order for anyone familiar with the relevant art to understand the technical content of the present invention and implement it accordingly, and according to the content disclosed in this specification, the scope of patent application and the drawings, anyone familiar with the relevant art can easily understand the related purposes and advantages of the present invention Therefore, the detailed features and advantages of the present invention will be described in detail in the embodiments.

As shown in FIGS. 2A to 3B, this embodiment is an etching machine structure 100 with a dynamically adjustable vertical position of the coil, which includes: a first plasma reaction chamber 110; a plurality of first lifting modules 120 ; And a first coil module 130.

The first plasma reaction chamber 110 is, for example, a plasma reaction chamber that can complete the etching process, and the first plasma reaction chamber 110 has a first reaction chamber 111.

The first lifting module 120 is mainly used to support, adjust, and set the height and position of the coil 30, and each first lifting module 120 has: a first supporting member 121; and a plurality of first lifting members 122.

The first supporting member 121 is fixed around the periphery of the first reaction chamber 111, and each first supporting member 121 may have a first sliding rail 121a.

The first lifting member 122 may have a first slideway 122a and a first fixing unit 122b. The first slideway 122a is slidably coupled to the first slide rail 121a of the first support member 121. A sliding rail 122a and the first sliding rail 121a can be designed to have a certain damping effect, thereby effectively generating a positioning effect; and the first coil module 130 is fixed on the first fixing unit 122b, so the first coil The module 130 can also be moved up and down.

The first coil module 130 is a surrounding structure. Therefore, the first coil module 130 is formed with a plurality of coils 30, which are respectively fixed on the first fixing units 122b of the first lifting members 122, and the first The coil module 130 can be vertically moved and positioned on the first support 121 by the first lifting member 122.

The above-mentioned first lifting module 120 provides the function of the first coil module 130 to move up and down as a whole, but in some cases, when more precise movement is required, the first support 121 can be combined with the A first sub-elevating member 140 is further provided between the first lifting members 122, and the first sub-elevating member 140 also has a first sub slide 140a and a first sub slide 140b.

The first sub-sliding rail 140a is combined with the first sliding rail 121a, and the first sub-sliding rail 140b is combined with the first sliding rail 122a, so that the first sub-lifting member 140 can be slidably combined up and down On the first supporting member 121, the first lifting members 122 are connected to the first sub-lifting member 140 by sliding up and down, so that when the first sub-lifting member 140 moves up and down, it can drive the The first lifting members 122 move up and down synchronously.

As shown in FIGS. 4A to 5B, this embodiment also provides a second embodiment 200 of the etching machine with a dynamically adjustable vertical position of the coil, which combines the above-mentioned etching machine with the first configuration and further has: a second plasma Reaction chamber 210; a plurality of second lifting modules 220; and a second coil module 230.

The second plasma reaction chamber 210 is also, for example, a plasma reaction chamber that can complete the etching process, and the second plasma reaction chamber 210 has a second reaction in communication with the first reaction chamber 111 Chamber 211.

A plurality of second lifting modules 220, and each second lifting module 220 has: a second supporting member 221; and a plurality of second lifting members 222.

The second supporting member 221 is fixed around the periphery of the second reaction chamber 211, and each second supporting member 221 may have a second sliding rail 221a.

The second lifting member 222 may have a second slideway 222a and a second fixing unit 222b. The second slideway 222a is slidably connected to the second slide rail 221a of the second support 221, the same The second slide rail 222a and the second slide rail 221a can be designed to have a certain damping effect, thereby effectively generating a positioning effect; and the second coil module 230 is fixed on the second fixing unit 222b, so The second coil module 230 can be moved up and down.

The second coil module 230 has a surrounding structure. Therefore, the second coil module 230 is formed with a plurality of coils 30, and is respectively fixed on the second fixing unit 222b of the plurality of second lifting members 222, so that the second The coil module 230 can be vertically moved and positioned on the second support 221 by the second lifting member 222.

The above-mentioned second lifting module 220 provides the function of moving the second coil module 230 up and down as a whole. However, in some cases, when more precise movement is required, the second support 221 can be combined with the A second sub-elevating member 240 may be further provided between the second lifting members 222, and the second sub-elevating member 240 also has a second sub slide 240a and a second sub slide 240b.

The second sub-sliding rail 240a is combined with the second sliding rail 221a, and the second sub-sliding rail 240b is combined with the second sliding rail 222a, so that the second sub-lifting member 240 can slide up and down to be combined with the first On the two supporting parts 221, the second lifting parts 222 are connected to the second sub lifting part 240 by sliding up and down, so that when the second lifting part 240 moves up and down, it can drive the The second lifting member 222 moves up and down synchronously.

As shown in Figure 6, by changing the position of the coil 30, the plasma at different positions can be removed. Areas A and B in the figure are located near the coil 30, so the energy is relatively large, so the deposits will be cleaned. Compared to the area C at the bottom of the figure, there are still sediments attached. From the simulation diagram, it can be known that the higher temperature area, due to the higher deposition removal rate, shows less polymer deposition on the chamber wall.

As shown in Figs. 7 to 8, after the high and low positions of the coil 30 move, the place where the plasma density is strong also moves, so the position where the deposits can be removed will also move to different positions.

As shown in FIG. 9, the pitch of the coil 30 is evenly dispersed, so its plasma density will be dispersed accordingly, and the energy for cleaning the deposits will also be evenly distributed.

However, the above-mentioned embodiments are used to illustrate the characteristics of the present invention, and their purpose is to enable those familiar with the technology to understand the content of the present invention and implement them accordingly, rather than limiting the scope of the invention. The equivalent modification or modification completed by the spirit of the disclosure should still be included in the scope of patent application described below.

100: The structure of the etching machine that can dynamically adjust the vertical position of the coil 110: The first plasma reaction chamber 111: The first reaction chamber 120: The first lifting module 121: The first support 121a: The first slide 122: The first lifting piece 122a: The first slide 122b: The first fixed unit 130: The first coil module 140: The first lifter 140a: First sub slide 140b: The first sub slide 200: Structure of the etching machine with dynamic adjustment of the vertical position of the coil 210: The second plasma reaction chamber 211: The second reaction chamber 220: The second lifting module 221: second support 222: The second lifting part 221a: second slide 222a: second slide 222b: second fixed unit 230: The second coil module 240: The second lifter 240a: second sub slide 240b: second sub slide 30: coil A: Area A B: Zone B C: C area

[Figure 1] is a live view of the inside of the reaction chamber of the conventional etching machine after being used for a period of time; [Fig. 2A] is an exploded embodiment diagram of the structure aspect 1 of the etching machine with the coil vertical position dynamically adjustable; [Fig. 2B] is a diagram of the three-dimensional combination embodiment of Fig. 2A; [Fig. 3A] is an exploded embodiment diagram of the structure aspect of the etching machine with the addition of the first sub-lifting member; [FIG. 3B] is a diagram of the three-dimensional combination embodiment of FIG. 3A; [Fig. 4A] is an exploded embodiment diagram of the second embodiment of the structure of the etching machine whose vertical position of the coil can be dynamically adjusted; [Fig. 4B] is a diagram of the three-dimensional combination embodiment of Fig. 4A; [Figure 5A] is an exploded embodiment diagram of the second sub-elevating member in the second embodiment of the etching machine; [FIG. 5B] is a diagram of the three-dimensional combination embodiment of FIG. 5A; [Figure 6] is the first half of the simulation diagram of the electron temperature distribution in the reaction chamber; [Figure 7] is a simulation diagram of the cleaning state with the coil in the first position; [Figure 8] is a simulation diagram of the cleaning state with the coil in the second position; and [Figure 9] is a simulation diagram of the cleaning state of the coil evenly dispersed.

100: The structure of the etching machine that can dynamically adjust the vertical position of the coil

110: The first plasma reaction chamber

111: The first reaction chamber

120: The first lifting module

121: The first support

121a: The first slide

122: The first lifting piece

122a: The first slide

122b: The first fixed unit

130: The first coil module

Claims (10)

An etching machine structure capable of dynamically adjusting the vertical position of a coil, comprising: A first plasma reaction chamber having a first reaction chamber; A plurality of first lifting modules, and each first lifting module has: A first support, which is fixedly arranged around the periphery of the first reaction chamber; and A plurality of first lifting members, which are slidably connected to the first support member by up and down; and A first coil module is fixed on the first lifting member. As described in the first item of the scope of patent application, the etching machine structure, wherein the first support member can have a first slide rail, and the first lifting member has a first slide rail, and the first slide rail can be , The lower slide is combined with the first slide rail. According to the etching machine structure described in the first item of the scope of patent application, one of the first lifting members has a first fixing unit, and the first coil module is fixed to the first fixing unit. For the etching machine structure described in item 1 of the scope of patent application, a first sub-elevating element is further provided between one of the first support members and the first elevating elements, which is slidably coupled to the first support element up and down. On a supporting part, the first lifting parts are connected to the first sub lifting parts by sliding up and down respectively. The etching machine structure described in item 4 of the scope of patent application, wherein the first sub-elevating member has a first sub slide and a first sub slide, and the first sub slide is connected to the first slide In combination, the first sub slide rail system is combined with the first slide rail. The etching machine structure described in item 1 of the scope of patent application further has: A second plasma reaction chamber having a second reaction chamber communicated with the first reaction chamber; A plurality of second lifting modules, and each second lifting module has: A second support member, which is fixed around the periphery of the second reaction chamber; and A plurality of second lifting members, which are slidably connected to the second support member by up and down; and A second coil module is fixed on the second lifting member. In the etching machine structure described in item 6 of the scope of patent application, the second support member may have a second slide rail, and the second lifting member may have a second slide rail, and the second slide rail can be mounted , The lower slide is combined with the second slide rail. According to the etching machine structure described in item 6 of the scope of patent application, one of the second lifting members has a second fixing unit, and the second coil module is fixed to the second fixing unit. For the etching machine structure described in item 6 of the scope of patent application, a second sub-elevating element is further provided between the second support member and the second elevating elements, which is slidably connected to the first On the two supporting parts, the second lifting parts are connected to the second sub lifting parts by sliding up and down respectively. The etching machine structure described in item 9 of the scope of patent application, wherein the second sub-elevating member has a second sub slide and a second sub slide, and the second sub slide is connected to the second slide In combination, the second sub slide rail system is combined with the second slide rail.

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