TWI483428B - Vertical light-emitting diode and its preparation method and application - Google Patents

Description

Vertical light-emitting diode and its preparation method and application

The present invention relates to a vertical light emitting diode and a manufacturing method and application thereof, and more particularly to a low current leakage and a reverse biased vertical light emitting diode and a manufacturing method thereof. A package structure on a wafer board using the same.

Since the 1960s, the advantages of low power consumption and long-lasting illumination of Light Emitting Diodes (LEDs) have gradually replaced the use of indicators or light sources for lighting or various electrical appliances in daily life. . What's more, the development of light-emitting diodes towards multi-color and high brightness has been applied to large outdoor display billboards or traffic signs.

In recent years, due to the booming development of the electronics industry and the increasing demand for electronic products, electronic products have entered the direction of multi-functionality and high-efficiency development, and have begun to apply light-emitting diode chips to various electronic products. In particular, the variety of portable electronic products is increasing, the volume and weight of electronic products are getting smaller and smaller, and the required circuit carrier board volume is also reduced.

For the fabrication process of the conventional vertical light-emitting diode, refer to FIG. 1A to FIG. 1H. First, as shown in FIG. 1A, a temporary substrate 11 is provided. Next, as shown in FIG. 1B, a second semiconductor epitaxial layer 123, an active intermediate layer 122, and a first semiconductor epitaxial layer 121 are sequentially deposited on the surface of the temporary substrate 11, and then patterned by etching or the like. The second semiconductor epitaxial layer 123, the active intermediate layer 122, and the first semiconductor epitaxial layer 121 form a plurality of semiconductor epitaxial multilayer structures 12.

Then, as shown in FIG. 1C, a reflective layer 142 is formed on the surface of the first semiconductor epitaxial layer 121 of the semiconductor epitaxial multilayer composite structure 12. As shown in FIG. 1D, an insulating protective layer 17 is formed to cover the sidewalls of the semiconductor epitaxial multilayer composite structure 12 and the surface of the temporary substrate 11, and the surface of the reflective layer 142 is exposed. Next, as shown in FIG. 1E, a first electrode 14 is formed on the surface of the insulating protective layer 17 and the reflective layer 142. As shown in FIG. 1F, a conductive carbon drill layer 15 is formed on the surface of the first electrode 14. Then, as shown in FIG. 1G, the temporary substrate 11 is removed by a laser lift-off technique. Finally, a second electrode 18 is formed on the surface of the second semiconductor epitaxial layer 123 of the semiconductor epitaxial multilayer structure 12.

However, in the above conventional method, when the temporary substrate 11 is removed by using a laser lift-off technique, the insulating protective layer 17 is easily damaged, so that the insulating protective layer 17 cannot protect and isolate the first electrode 14 below. Causes problems such as leakage or short circuit.

Accordingly, if the above problems are improved, the yield of the vertical light-emitting diodes can be improved, thereby promoting the development of the overall electronics industry.

The main object of the present invention is to provide a vertical light emitting diode, wherein by providing a first insulating protective layer, the effect of protecting the first electrode can be achieved during the manufacturing process, and the second insulating protective layer can be prevented from being damaged. And caused the first store and short-circuit or leakage.

In order to achieve the above object, an aspect of the present invention provides a vertical light emitting diode comprising: a conductive substrate; a conductive diamond-like carbon layer disposed on the conductive substrate; and a first insulating protective layer ( a first passivation layer) disposed on the conductive diamond-like carbon layer and provided with a first opening; a first electrode disposed on the conductive diamond-like carbon layer and located on the first insulating protective layer a first epitaxial layer; a semiconductor epitaxial layer disposed on the first electrode; a second passivation layer disposed on the first insulating protective layer and covering the a side of the semiconductor epitaxial multilayer composite structure, and a second opening is formed to expose the surface of the semiconductor epitaxial multilayer composite structure; and a second electrode is disposed on the semiconductor epitaxial multilayer composite structure and located at the second The second opening of the insulating protective layer.

In the above vertical light emitting diode of the present invention, the first electrode may include a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the semiconductor epitaxial multilayer composite structure. .

In the above vertical light emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may include a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer, and the active intermediate layer is interposed. And between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. In the present invention, the active intermediate layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

In the vertical LED of the present invention, the first electrode may include a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the first semiconductor epitaxial layer. . In the present invention, the material of the reflective layer is not particularly limited, and examples thereof may be aluminum, silver, nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), and zinc (Zn). , tin (Sn), antimony (Sb), lead (Pb), copper (Cu), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. In other words, it can also be a multi-layer metal structure, in addition to achieving a reflection effect, the effect of forming an ohmic contact can also be achieved.

In the above vertical light emitting diode of the present invention, the first semiconductor epitaxial layer and the first electrode layer may be P-type, and the second semiconductor epitaxial layer and the second electrode may be N-type.

In the above vertical light-emitting diode of the present invention, the conductive diamond-like carbon layer is a multilayer composite structure of a conductive material and conductive diamond-like carbon, a drilled carbon layer containing a conductive material, and a graphitized diamond-like carbon. a layer or a combination thereof, wherein the conductive material is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium ( Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) At least one of the groups.

In the above vertical light-emitting diode of the present invention, the conductive substrate is made of metal, a ceramic containing a conductive material, or a diamond containing a conductive material.

In the vertical light-emitting diode of the present invention, the material of the first insulating protective layer is not particularly limited as long as the first electrode 24 can be protected from damage by the subsequent etching solution or any other solution. The material of the second insulating protective layer is also not particularly limited as long as it can protect the side of the semiconductor epitaxial multilayer composite structure from any adverse effects. The material of the first insulating protective layer and the material of the second insulating protective layer may be cerium oxide, tantalum nitride, aluminum nitride, insulating diamond-like carbon, or a combination thereof.

Another object of the present invention is to provide a method for fabricating a vertical light emitting diode in which a plurality of semiconductor epitaxial multilayer structures are formed without first performing a patterning step, but a first insulating protective layer and a first electrode are formed first. And protecting the first electrode by using the first insulating protective layer to avoid damage to the first electrode during the manufacturing process, and then removing the temporary substrate by using a laser stripping technique, then patterning a plurality of semiconductor epitaxial multilayer composite structures and The second insulating protective layer covers the sidewall of the semiconductor epitaxial multilayer composite structure, so that the second insulating protective layer is not damaged as in the prior art to cause short circuit and leakage.

In order to achieve the above object, another aspect of the present invention provides a method for fabricating a vertical light emitting diode, comprising the steps of: providing a temporary substrate on which a semiconductor epitaxial multilayer composite structure is formed; An electrode, and a first insulating protective layer, wherein the semiconductor epitaxial multilayer composite structure is on the temporary substrate, the first insulating protective layer and the first electrode are located on the semiconductor epitaxial multilayer composite structure, The first insulating protective layer is patterned to be provided with a first opening, the first electrode is embedded in the first opening of the first insulating protective layer; the first insulating protective layer and the first electrode Forming a conductive diamond-like carbon layer; forming a conductive substrate on the conductive diamond-like carbon layer, and removing the temporary substrate; patterning the semiconductor epitaxial multilayer composite structure to expose the first insulation a protective layer; a second insulating protective layer is formed on the patterned semiconductor epitaxial multilayer composite structure and the first insulating protective layer, wherein the second insulating protective layer is provided with a plurality of second openings , To reveal the pattern of the composite multilayer semiconductor epitaxial structure; and in the second hole of the second insulating protective layer and on the semiconductor epitaxial multilayer composite structure of the patterned to form a second electrode.

In a conventional technique for forming a vertical light-emitting diode, a plurality of semiconductor epitaxial multilayer composite structures are formed on a temporary substrate by a patterning process, but the method also forms a second insulating protective layer to cover the first The sidewalls of the semiconductor epitaxial multilayer composite structure, so that a portion of the second insulating protective layer is in contact with the temporary substrate, so that the second insulating protective layer is damaged after the removal of the temporary substrate by the laser stripping technique, so that the second insulating protection is performed. The underlying first electrode covered by the layer is exposed, which easily causes leakage or short circuit of the overall structure.

In contrast, in the above manufacturing method of the vertical light emitting diode of the present invention, the step of patterning a plurality of semiconductor epitaxial multilayer composite structures is skipped, and the first electrode and the first insulating protective layer are formed, and the first electrode is used. An insulating protective layer protects the periphery of the electrode from the pad, avoiding the intermediate etching step of the process from damaging the first electrode. Even if the temporary substrate is subsequently removed by the laser lift-off technique, the second insulating protective layer is not damaged because the second insulating protective layer has not been formed. Subsequently, after forming a plurality of semiconductor epitaxial multilayer composite structures by patterning, a second insulating protective layer is formed to cover the side of the semiconductor epitaxial multilayer composite structure, so that the problem that the prior art is prone to short circuit and leakage is avoided.

In the above method for manufacturing a vertical light-emitting diode according to the present invention, the first insulating protective layer is formed on the semiconductor epitaxial multilayer composite structure, and the first opening is formed by patterning, and then The first electrode is formed in the first opening of the first insulating protective layer on the semiconductor epitaxial multilayer composite structure.

In the above method for fabricating the vertical light-emitting diode of the present invention, before the forming the second insulating protective layer, the method further comprises the step of roughening the patterned semiconductor epitaxial multilayer composite structure.

In the above method for manufacturing a vertical light-emitting diode of the present invention, the first electrode includes a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the semiconductor epitaxial layer. Between composite structures.

In the above method for fabricating a vertical light emitting diode of the present invention, the semiconductor epitaxial multilayer composite structure may include a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer, and the active intermediate A layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The active intermediate layer may be a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light-emitting diode.

In the above method for fabricating a vertical light-emitting diode of the present invention, the first semiconductor epitaxial layer and the first electrode layer are P-type, the second semiconductor epitaxial layer and the second electrode are N-type.

In the above method for manufacturing a vertical light-emitting diode of the present invention, the first electrode includes a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the first semiconductor Between the layers. The material of the reflective layer is not particularly limited, and examples thereof may be aluminum, silver, nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), and tin (Sn). , bismuth (Sb), lead (Pb), copper (Cu), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. In other words, it can also be a multi-layer metal structure, in addition to achieving a reflection effect, the effect of forming an ohmic contact can also be achieved.

In the above method for manufacturing a vertical light-emitting diode of the present invention, the conductive diamond-like carbon layer is a multilayer composite structure of a conductive material and conductive diamond-like carbon, a carbon-coated layer containing a conductive material, and a graphite. a carbonaceous layer or a combination thereof, wherein the conductive material is selected from the group consisting of indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), and graphene ( Graphene), titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), and gold (Au) at least one of the group.

In the above method for manufacturing a vertical light-emitting diode of the present invention, the conductive substrate is made of a metal, a ceramic containing a conductive material, or a diamond containing a conductive material. In addition, the material of the first insulating protective layer and the material of the second insulating protective layer are respectively cerium oxide, tantalum nitride, aluminum nitride, insulating diamond-like carbon, or a combination thereof.

In addition, another object of the present invention is to provide a chip on board (COB) in which the above-mentioned light emitting diode having a conductive diamond-like carbon layer of the present invention is in a polycrystalline manner. Or the wire bonding method is electrically connected to the circuit carrier board, so the thermal expansion stress of each layer structure of the light emitting diode can be buffered by the diamond-like carbon layer in the structure, thereby further improving the heat dissipation efficiency, luminous efficiency and life of the package structure on the wafer board. .

In order to achieve the above object, another aspect of the present invention provides a chip on board (COB) including: a circuit carrier board; and the above-mentioned light emitting diode having a conductive diamond-like carbon layer of the present invention The body is electrically connected to the circuit carrier via the first electrode and the second electrode.

In the above-mentioned wafer-on-board package structure, the circuit carrier board may comprise an insulating layer and a circuit substrate, wherein the insulating layer is made of insulating diamond-like carbon, aluminum oxide, ceramic, diamond-containing epoxy. The resin, or a composition thereof, or a metal material having a surface covered with the insulating layer, and the circuit substrate may be a metal plate, a ceramic plate or a substrate. In addition, the surface of the circuit carrier can also optionally include a type of drilled carbon layer to increase the heat dissipation effect.

The embodiments of the present invention are described by way of specific examples, and those skilled in the art can readily appreciate the other advantages and advantages of the present invention. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes can be made without departing from the spirit and scope of the invention.

The drawings in the embodiments of the present invention are simplified schematic diagrams. However, the drawings show only the components related to the present invention, and the components shown therein are not in actual implementation, and the number of components, the shape, and the like in actual implementation are a selective design, and the component layout thereof. The pattern may be more complicated.

Embodiment 1

Referring to FIG. 2A to FIG. 2H, there are shown structural diagrams showing the flow of the manufacturing method of the vertical light-emitting diode of the present invention.

First, as shown in FIG. 2A, a temporary substrate 21 is provided, and a semiconductor epitaxial multilayer composite structure 22, a first electrode 24, and a first insulating protective layer 23 are sequentially formed on the temporary substrate 21. The semiconductor epitaxial multilayer composite structure 22 is located on the surface of the temporary substrate 21, and the first insulating protective layer 23 and the first electrode 24 are located on the surface of the semiconductor epitaxial multilayer composite structure 22, and the patterning process is used in the first An insulating layer 23 forms a plurality of first openings 231 embedded in the first opening 231 of the first insulating protective layer 23. The material of the temporary substrate 21 may be, for example, a sapphire substrate.

The semiconductor epitaxial multilayer composite structure 22 can include: a first semiconductor epitaxial layer 221, an active intermediate layer 222, and a second semiconductor epitaxial layer 223, wherein the first semiconductor epitaxial layer 221, the active intermediate The layer 222 is stacked on the second semiconductor epitaxial layer 223, and the active intermediate layer 222 is interposed between the first semiconductor epitaxial layer 221 and the second semiconductor epitaxial layer 223, and the second A semiconductor epitaxial layer 223 is provided on the surface of the temporary substrate. In this embodiment, the first semiconductor epitaxial layer 221 is N-type, and the second semiconductor epitaxial layer 223 is P-type, so that a corresponding electrode connected thereto is subsequently formed, that is, connected to the first semiconductor epitaxial layer 221 The first electrode 24 is N-type, and the second electrode (described later) connected to the second semiconductor epitaxial layer 223 is P-type. The material of the semiconductor epitaxial multilayer composite structure 22 is gallium nitride (GaN). However, the material suitable for the semiconductor epitaxial multilayer composite structure of the present invention is not limited thereto, and other materials commonly used in the art may also be used. In addition, the active intermediate layer may be selected according to requirements. In this embodiment, the active intermediate layer is a multiple quantum well layer for improving the efficiency of converting electrical energy into light energy in the light emitting diode. .

The first electrode 24 can include a first electrode layer 241 and a reflective layer 242 , and the reflective layer 242 is sandwiched between the first electrode layer 241 and the first semiconductor epitaxial layer 221 . In this embodiment, the material of the reflective layer may be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, aluminum, Silver, nickel (Ni), cobalt (Co), palladium (Pd), platinum (Pt), gold (Au), zinc (Zn), tin (Sn), antimony (Sb), lead (Pb), copper (Cu ), copper silver (CuAg), nickel silver (NiAg), alloys thereof, or metal mixtures thereof. The above-mentioned copper-silver (CuAg) and nickel-silver (NiAg) and the like refer to a eutectic metal, and in addition to achieving a reflection effect, the effect of forming an ohmic contact can also be achieved. For the reflective layer 242, it will be apparent to those skilled in the art that the reflective layer 242 can be selectively disposed as desired. In other words, if the reflective layer is not intended to be disposed, the step of forming the reflective layer 242 can be omitted.

The order of forming the first insulating protective layer 23 and the first electrode 24 is not particularly limited, and the first insulating protective layer 23 is formed on the semiconductor epitaxial multilayer composite structure 22 to pattern the first insulating protection. After the layer 23 forms the plurality of first openings 231, the first electrode 24 is formed in the first opening 231 of the semiconductor epitaxial multilayer composite structure 22. Alternatively, the first electrode 24 is formed on the semiconductor epitaxial multilayer composite structure 22, and the first electrode 24 is patterned into a plurality of blocks, and a first insulating protective layer 23 is formed on the surface of the semiconductor epitaxial multilayer composite structure 22. And the first insulating protective layer exposes a surface of the first electrode 24. The material of the first insulating protective layer 23 is not particularly limited as long as the first electrode 24 can be protected from the subsequent etching solution or any other solution, and may be, for example, ceria, tantalum nitride, aluminum nitride, or insulation. Drilling carbon, or a combination thereof.

Next, as shown in FIG. 2B, a conductive diamond-like carbon layer 25 is formed on the surface of the first insulating protective layer 23 and the first electrode 24. The conductive diamond-like carbon layer 25 may be a multi-layer composite structure of a conductive material and a conductive diamond-like carbon, a drilled carbon layer containing a conductive material, a graphitized carbonaceous layer or a combination thereof. The conductive material may be selected from indium tin oxide (ITO), aluminum zinc oxide (AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), Chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), gold (Au), and combinations or alloys thereof. In other words, the conductive material may be composed of an alloy or a mixture of the above materials. Since the diamond-like carbon has a better coefficient of thermal expansion (CTE), the conductive diamond-like carbon layer 25 accelerates heat loss during operation of the light-emitting diode. In the present embodiment, a multilayer composite structure using a titanium layer or a titanium tungsten layer/conductive carbon-like carbon layer is used as the conductive diamond-like carbon layer 25, which can utilize a cathode arc multi-target sputtering device (Cathodic Arc Multi -targets and Cluster sputter).

Then, as shown in FIG. 2C, a conductive substrate 26 is formed on the surface of the conductive diamond-like carbon layer 25. The material of the conductive substrate 26 is not particularly limited as long as the electrical conductivity can be achieved. For example, a conductive substrate made of a metal, a ceramic containing a conductive material, or a diamond containing a conductive material can be used. If metal is used, it can be formed by general metal plating, such as copper, nickel-copper, nickel, or a mixture of diamond-copper, diamond-nickel. Next, as shown in FIG. 2D, the temporary substrate 21 is removed by a laser lift-off technique.

As shown in FIG. 2E, the semiconductor epitaxial multilayer composite structure 22 is patterned into a plurality of blocks, thereby exposing the first insulating protective layer 23, wherein an example can be achieved by using inductive coupled plasma (IPC). . Next, as shown in FIG. 2F, a second insulating protective layer 27 is formed on the patterned semiconductor epitaxial multilayer composite structure 22 and the first insulating protective layer 23, wherein the second insulating protective layer 27 covers the The side of the semiconductor epitaxial multilayer structure 22 and the surface of the first insulating protective layer 23, and the second insulating protective layer 27 is provided with a plurality of second openings 271 to expose the surface of the patterned semiconductor epitaxial multilayer structure 22 . The material of the second insulating protective layer 27 is not particularly limited as long as the semiconductor epitaxial multilayer composite structure 22 can be protected from damage, and may be, for example, cerium oxide, tantalum nitride, aluminum nitride, insulating diamond-like carbon, or The combination thereof can be formed by plasma-enhanced chemical vapour deposition (PECVD). Before the following steps are continued, the surface of the patterned semiconductor epitaxial multilayer structure 22 may be roughened first, for example, by wet etching to increase the luminosity of the light-emitting diode. This step can be selectively performed according to requirements. carried out.

Then, as shown in FIG. 2G, a second electrode 28 is formed on the second opening 271 of the second insulating protective layer 27 and on the patterned semiconductor epitaxial multilayer composite structure 22. The material of the second electrode 28 can be an electrode material commonly used in the field of the present invention, or can be similar to the first electrode 24, for example, indium tin oxide (ITO), aluminum oxide zinc ( Aluminum zinc oxide, AZO), zinc oxide (ZnO), graphene, titanium (Ti), aluminum (Al), chromium (Cr), nickel (Ni), platinum (Pt), molybdenum (Mo), tungsten (W), silver (Ag), platinum (Pt), gold (Au), and combinations or alloys thereof.

Finally, as shown in FIG. 2H, a single light-emitting diode is separated by cutting, thereby obtaining a vertical light-emitting diode of the present invention, comprising: a conductive substrate 26; a conductive diamond-like carbon layer 25, The first insulating layer 23 is disposed on the conductive diamond-like carbon layer 25 and is provided with a first opening 231; a first electrode 24 is disposed on the conductive substrate 26 The first electrode 24 includes a first electrode layer 241 and a reflective layer 242; a semiconductor beam is disposed on the first conductive layer 23 of the first insulating layer 23; The multilayer multilayer composite structure 22 is disposed on the first electrode 24, wherein the semiconductor epitaxial multilayer composite structure 22 includes a first semiconductor epitaxial layer 221, an active intermediate layer 222, and a second semiconductor a layer 223, and the active interlayer 222 is interposed between the first semiconductor epitaxial layer 221 and the second semiconductor epitaxial layer 223, and the reflective layer 242 of the first electrode 24 is interposed therebetween. Between an electrode layer 241 and the semiconductor epitaxial multilayer composite structure 22; The second insulating protective layer 27 is disposed on the first insulating protective layer 23 and covers the side of the semiconductor epitaxial multilayer composite structure 22, and is provided with a second opening 271 to expose the surface of the semiconductor epitaxial multilayer composite structure 22. And a second electrode 28 disposed on the semiconductor epitaxial multilayer composite structure 22 and located in the second opening 271 of the second insulating protective layer 27.

Embodiment 2

Referring to FIG. 3, it is a schematic structural view of a package structure on a wafer board of the present embodiment.

As shown in FIG. 3, the package structure on the wafer board includes: a circuit carrier 3; and the vertical light emitting diode obtained in the first embodiment, which is electrically connected via the first electrode 24 and the second electrode 28. The circuit carrier 3 is connected to the circuit carrier 3, wherein the circuit carrier 3 comprises an insulating layer 31, a circuit substrate 30, and a circuit (not shown). The insulating layer 31 is made of diamond-like carbon and aluminum oxide. The ceramic substrate, the diamond-containing epoxy resin, or a mixture of the above materials, the circuit substrate 30 is a metal plate, a ceramic plate or a substrate.

In the package structure on the wafer board, the first electrode 24 and the second electrode 28 are electrically connected to the circuit carrier 3, and can be achieved by a common method in the technical field to which the present invention pertains, for example, using wire bonding.

According to the present invention, in the chip on board (COB) of the present invention, the second insulating protective layer and the first insulating protective layer of the light emitting diode can simultaneously protect the first electrode and the semiconductor epitaxial multilayer composite structure. The side surface can avoid short circuit and leakage, etc., so that the package structure on the wafer board has better heat dissipation efficiency and illumination life.

Accordingly, the vertical light-emitting diode of the present invention has a safe structure and can avoid problems such as short circuit and leakage caused by damage of the light-emitting diode structure in the process, thereby improving user safety and light-emitting diodes. The luminosity and lifetime of the body.

The above-mentioned embodiments are merely examples for convenience of description, and the scope of the claims is intended to be limited to the above embodiments.

11, 21. . . Temporary substrate

123, 223. . . Second semiconductor epitaxial layer

122, 222. . . Active intermediate layer

121, 221. . . First semiconductor epitaxial layer

12, 22. . . Semiconductor epitaxial multilayer composite structure

twenty three. . . First insulating protective layer

231. . . First opening

142, 242. . . Reflective layer

241. . . First electrode layer

14, 24. . . First electrode

15,25. . . Conductive carbon drill layer

26. . . Conductive substrate

17. . . Insulating protective layer

27. . . Second insulating protective layer

271. . . Second opening

18, 28. . . Second electrode

3. . . Circuit carrier

31. . . Insulation

30. . . Circuit substrate

1A to 1H are schematic flow charts showing a conventional method for manufacturing a vertical light-emitting diode.

2A to 2H are schematic flow charts showing a method of manufacturing a vertical light-emitting diode according to an embodiment of the present invention.

3 is a schematic structural view of a package structure on a wafer board in Embodiment 2 of the present invention.

twenty two. . . Semiconductor epitaxial multilayer composite structure

twenty three. . . First insulating protective layer

231. . . First opening

242. . . Reflective layer

241. . . First electrode layer

twenty four. . . First electrode

25. . . Conductive carbon drill layer

26. . . Conductive substrate

27. . . Second insulating protective layer

28. . . Second electrode

Claims (21)

A vertical light-emitting diode includes: a conductive substrate; a conductive diamond-like carbon layer disposed on the conductive substrate; and a first insulating protective layer disposed on the conductive diamond-like carbon layer And a first opening, the first electrode is disposed on the conductive diamond-like carbon layer and located in the first opening of the first insulating protective layer; a semiconductor epitaxial multilayer composite structure, The second insulating protective layer is disposed on the first insulating protective layer and covers the side of the semiconductor epitaxial multilayer composite structure, and is provided with a second opening to expose the semiconductor An epitaxial multilayer composite structure surface; and a second electrode disposed on the semiconductor epitaxial multilayer composite structure and located in the second opening of the second insulating protective layer. The vertical light-emitting diode of claim 1, wherein the first electrode comprises a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the Between the semiconductor epitaxial multilayer composite structures. The vertical light emitting diode according to claim 1, wherein the semiconductor epitaxial multilayer structure comprises a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor epitaxial layer. And the active intermediate layer is sandwiched between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The vertical light-emitting diode according to claim 3, wherein the first semiconductor epitaxial layer and the first electrode layer are P-type, the second semiconductor epitaxial layer and the second electrode-based N type. The vertical light-emitting diode of claim 3, wherein the first electrode comprises a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode layer and the Between the first semiconductor epitaxial layers. The vertical light-emitting diode according to claim 1, wherein the conductive diamond-like carbon layer is a multilayer composite structure of a conductive material and conductive diamond-like carbon, and a carbon-coated carbon layer containing a conductive material. a graphitized carbonaceous layer or a combination thereof. The vertical light-emitting diode according to claim 1, wherein the conductive substrate is made of metal, a ceramic containing a conductive material, or a diamond containing a conductive material. The vertical light-emitting diode according to claim 1, wherein the material of the first insulating protective layer and the material of the second insulating protective layer are respectively ceria, tantalum nitride, aluminum nitride , insulated diamond-like carbon, or a combination thereof. A method for manufacturing a vertical light-emitting diode includes the steps of: providing a temporary substrate on which a semiconductor epitaxial multilayer composite structure, a first electrode, and a first insulating protective layer are formed, wherein The semiconductor epitaxial multilayer composite structure is located on the temporary substrate, and the first insulating protective layer and the first electrode are located in the semiconductor epitaxial multilayer The first insulating protective layer is patterned to be provided with a first opening, the first electrode is embedded in the first opening of the first insulating protective layer; and the first insulating protective layer and Forming a conductive diamond-like carbon layer on the first electrode; forming a conductive substrate on the conductive diamond-like carbon layer, and removing the temporary substrate; patterning the semiconductor epitaxial multilayer composite structure to expose a first insulating protective layer; a second insulating protective layer is formed on the patterned semiconductor epitaxial multilayer composite structure and the first insulating protective layer, wherein the second insulating protective layer is provided with a plurality of second openings a hole to expose the patterned semiconductor epitaxial multilayer composite structure; and a second electrode formed in the second opening of the second insulating protective layer and on the patterned semiconductor epitaxial multilayer composite structure. The method for manufacturing a vertical light-emitting diode according to claim 9, wherein the first insulating protective layer is formed on the semiconductor epitaxial multilayer composite structure, and the first is provided by patterning. After the opening, the first electrode is formed in the first opening of the first insulating protective layer on the semiconductor epitaxial multilayer composite structure. The method for manufacturing a vertical light-emitting diode according to claim 9, further comprising the step of roughening the patterned semiconductor epitaxial multilayer composite structure before forming the second insulating protective layer. The method of manufacturing the vertical light-emitting diode according to claim 9, wherein the first electrode comprises a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode Between the layer and the semiconductor epitaxial multilayer composite structure. The method for manufacturing a vertical light-emitting diode according to claim 9, wherein the semiconductor epitaxial multilayer structure comprises a first semiconductor epitaxial layer, an active intermediate layer, and a second semiconductor beam. a seed layer, and the active intermediate layer is interposed between the first semiconductor epitaxial layer and the second semiconductor epitaxial layer. The method for manufacturing a vertical light-emitting diode according to claim 13, wherein the first semiconductor epitaxial layer and the first electrode layer are P-type, the second semiconductor epitaxial layer and the second The electrode is N type. The method of manufacturing the vertical light-emitting diode according to claim 13, wherein the first electrode comprises a first electrode layer and a reflective layer, and the reflective layer is sandwiched between the first electrode Between the layer and the first semiconductor epitaxial layer. The method for manufacturing a vertical light-emitting diode according to claim 9, wherein the conductive diamond-like carbon layer is a multilayer composite structure of a conductive material and conductive diamond-like carbon, and a conductive material or the like. Drilling a carbon layer, a graphitized carbonaceous layer, or a combination thereof. The method of manufacturing a vertical light-emitting diode according to claim 9, wherein the conductive substrate is made of a metal, a ceramic containing a conductive material, or a diamond containing a conductive material. The method for manufacturing a vertical light-emitting diode according to claim 9, wherein the material of the first insulating protective layer and the material of the second insulating protective layer are respectively ceria, tantalum nitride, Aluminum nitride, insulated diamond-like carbon, or a combination thereof. A chip on board (COB) comprising: a circuit carrier; and a vertical light emitting diode according to any one of claims 1 to 8 Packaged on the circuit carrier. The flip chip package structure of claim 19, wherein the circuit carrier comprises an insulating layer and a circuit substrate, the material of the insulating layer is selected from the group consisting of diamond-like carbon, alumina, ceramic, and At least one of the group of diamond epoxy resins. The flip chip package structure of claim 20, wherein the circuit substrate is a metal plate, a ceramic plate or a germanium substrate.