TWI398205B - Method for manufacturing printed circuit board - Google Patents
Method for manufacturing printed circuit board Download PDFInfo
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- TWI398205B TWI398205B TW098106010A TW98106010A TWI398205B TW I398205 B TWI398205 B TW I398205B TW 098106010 A TW098106010 A TW 098106010A TW 98106010 A TW98106010 A TW 98106010A TW I398205 B TWI398205 B TW I398205B
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- Prior art keywords
- circuit pattern
- metal layer
- insulating material
- stage
- forming
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- 238000000034 method Methods 0.000 title claims description 88
- 238000004519 manufacturing process Methods 0.000 title claims description 56
- 239000002184 metal Substances 0.000 claims description 117
- 229910052751 metal Inorganic materials 0.000 claims description 117
- 239000011810 insulating material Substances 0.000 claims description 98
- 230000008569 process Effects 0.000 claims description 77
- 238000005530 etching Methods 0.000 claims description 56
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 238000007747 plating Methods 0.000 claims description 36
- 239000010949 copper Substances 0.000 claims description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 25
- 229910052802 copper Inorganic materials 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 238000003825 pressing Methods 0.000 claims description 16
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 29
- 238000009713 electroplating Methods 0.000 description 14
- 239000000654 additive Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 239000011889 copper foil Substances 0.000 description 6
- 238000001459 lithography Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000003475 lamination Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000011410 subtraction method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
- H05K3/205—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern using a pattern electroplated or electroformed on a metallic carrier
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Description
本發明係關於印刷電路基板的製造方法。The present invention relates to a method of manufacturing a printed circuit board.
伴隨電子產業的發達,對於電子零件的高機能性、小型化、價格競爭力、以及短交貨期的要求變高。為回應如此的動向,封裝基板製造公司,應用半加成法(Semi additive process;SAP)來對應基板的薄型化及高密度化。With the development of the electronics industry, the demand for high functionality, miniaturization, price competitiveness, and short lead times for electronic components has increased. In response to such a trend, the package substrate manufacturing company applies a semi-additive process (SAP) to reduce the thickness and density of the substrate.
但是,若根據半加成法,雖可實現高密度電路圖樣,但在形成電路圖樣及通孔(viahole)形成時,製程數增加,發生製造製程的追加費用。另外,為了對基板表面及加工孔內部進行除膠渣(desmear)處理,來進行化學鍍銅,需要花費較多的費用與時間。However, according to the semi-additive method, a high-density circuit pattern can be realized. However, when a circuit pattern and a via hole are formed, the number of processes increases, and an additional cost of the manufacturing process occurs. Further, in order to carry out the electroless copper plating on the surface of the substrate and the inside of the processing hole, it takes a lot of cost and time.
先前技術中,是先在兩面貼銅積層板形成加工孔,接著除膠渣處理加工孔內壁及基板表面,然後進行化學鍍銅。然後,在化學鍍銅層上進行電解電鍍,形成電路圖樣及通孔。亦即,先前,是在形成加工孔後,為了連接層間而將加工孔內部電鍍。由於如此的加工孔內壁的電鍍過程,基板表面的電鍍層會變厚,難以形成微細電路。In the prior art, a machined hole is formed on a double-sided copper-clad laminate, and then the inner wall of the hole and the surface of the substrate are processed by desmear processing, and then electroless copper plating is performed. Then, electrolytic plating is performed on the electroless copper plating layer to form a circuit pattern and a via hole. That is, in the past, after the processing holes were formed, the inside of the processing holes was plated in order to connect the layers. Due to such a plating process of the inner wall of the machined hole, the plating layer on the surface of the substrate becomes thick, and it is difficult to form a fine circuit.
為了解決如此的先前技術的問題點,本發明的目的係提供一種印刷電路基板的製造方法,可製造出薄型化及高密度化的基板,且可降低製造製程所花費的時間、費用。In order to solve the problems of the prior art, an object of the present invention is to provide a method for manufacturing a printed circuit board, which can produce a substrate that is thinner and higher in density, and can reduce the time and cost of the manufacturing process.
若根據本發明之一實施形態,則可提供一種印刷電路基板的製造方法,其係包含:形成第一電路圖樣的階段;在第一電路圖樣上形成凸塊的階段;在第一電路圖樣上積層絕緣材,使第一電路圖樣被埋入絕緣材中,並藉由上述凸塊來貫通絕緣材的階段;在絕緣材上形成第二電路圖樣的階段;以及加壓第二電路圖樣,使第二電路圖樣被埋入絕緣材的階段。According to an embodiment of the present invention, a method of manufacturing a printed circuit board comprising: a stage of forming a first circuit pattern; a stage of forming a bump on the first circuit pattern; and a first circuit pattern Laminating the insulating material, so that the first circuit pattern is buried in the insulating material, and the step of penetrating the insulating material by the bump; the stage of forming the second circuit pattern on the insulating material; and pressurizing the second circuit pattern to The second circuit pattern is buried in the stage of the insulating material.
此處,在第一電路圖樣上形成凸塊的階段,可藉由將銀墨水印刷在第一電路圖樣上來進行。Here, the stage of forming bumps on the first circuit pattern can be performed by printing silver ink on the first circuit pattern.
形成第一電路圖樣的階段,可包含:提供在其一面已積層有金屬層之載體的階段;在金屬層上形成電鍍光阻的階段;以及在金屬層上形成導電性物質的階段。The stage of forming the first circuit pattern may include: providing a stage of a carrier having a metal layer laminated on one side thereof; forming a stage of plating a photoresist on the metal layer; and a stage of forming a conductive substance on the metal layer.
此處,被積層於載體上的金屬層,可由被形成於載體上的第一金屬層;以及被形成於第一金屬層上的第二金屬層所構成。Here, the metal layer laminated on the carrier may be composed of a first metal layer formed on the carrier and a second metal layer formed on the first metal layer.
第一金屬層可包含銅(Cu),第二金屬層可包含鎳(Ni)。The first metal layer may comprise copper (Cu) and the second metal layer may comprise nickel (Ni).
在絕緣材上形成第二電路圖樣的階段,可包含:在絕緣材及凸塊上形成導電層的階段;除去載體的階段;在導電層上形成蝕刻光阻的階段;以及蝕刻導電層及第一金屬層的階段。The stage of forming the second circuit pattern on the insulating material may include: a stage of forming a conductive layer on the insulating material and the bump; a stage of removing the carrier; a stage of forming an etching photoresist on the conductive layer; and etching the conductive layer and the first The stage of a metal layer.
在絕緣材及凸塊上形成導電層的階段,可利用壓緊製程,藉由將導電層加壓於絕緣材上,使導電層與凸塊電性連接來進行。In the stage of forming the conductive layer on the insulating material and the bump, the pressing process can be performed by pressing the conductive layer against the insulating material to electrically connect the conductive layer and the bump.
另外,在形成第二電路圖樣的階段後,可更包含除去第二金屬層的階段。In addition, after the stage of forming the second circuit pattern, the stage of removing the second metal layer may be further included.
除去第二金屬層的階段,可藉由供給蝕刻溶液,蝕刻第二金屬層來進行。The stage of removing the second metal layer can be performed by supplying an etching solution and etching the second metal layer.
另一方面,在絕緣材上形成第二電路圖樣的階段,可包含:在絕緣材及凸塊上形成種子層的階段;除去載體的階段;在種子層及金屬層上形成電鍍光阻的階段;在種子層上形成導電性物質的階段;除去電鍍光阻的階段;以及蝕刻種子層及金屬層的階段。On the other hand, the stage of forming the second circuit pattern on the insulating material may include: a stage of forming a seed layer on the insulating material and the bump; a stage of removing the carrier; and a stage of forming a plating resist on the seed layer and the metal layer. a stage of forming a conductive substance on the seed layer; a stage of removing the plating resist; and a stage of etching the seed layer and the metal layer.
此處,在絕緣材及凸塊上形成種子層的階段,可利用壓緊製程,藉由將種子層加壓於絕緣材上,使種子層與凸塊電性連接來進行。Here, at the stage of forming the seed layer on the insulating material and the bump, the seed layer can be electrically connected to the bump by pressurizing the seed layer against the insulating material by a pressing process.
而且,形成第一電路圖樣的階段,可包含:提供在其一面已積層有金屬層之載體的階段;在金屬層上積層感光性物質的階段;藉由使感光性物質選擇性地曝光、顯像,來形成蝕刻光阻的階段;以及蝕刻金屬層的階段。Moreover, the stage of forming the first circuit pattern may include: providing a stage of a carrier having a metal layer laminated on one side thereof; a stage of laminating a photosensitive substance on the metal layer; and selectively exposing the photosensitive substance to the display Like, to form the stage of etching the photoresist; and the stage of etching the metal layer.
在絕緣材上形成第二電路圖樣的階段,可包含:在絕緣材及凸塊上形成導電層的階段;除去載體的階段;在導電層及第一電路圖樣上形成蝕刻光阻的階段;以及蝕刻導電層的階段。a stage of forming a second circuit pattern on the insulating material, comprising: a stage of forming a conductive layer on the insulating material and the bump; a stage of removing the carrier; a stage of forming an etching photoresist on the conductive layer and the first circuit pattern; The stage of etching the conductive layer.
而且,在絕緣材及凸塊上形成導電層的階段,可利用壓緊製程,藉由將導電層加壓於絕緣材上,使導電層與凸塊電性連接來進行。Further, at the stage of forming the conductive layer on the insulating material and the bump, the pressing process can be performed by pressing the conductive layer against the insulating material to electrically connect the conductive layer and the bump.
若根據本發明的實施例,可得到微細電路圖樣及高密度電路圖樣,且可降低製造製程所花費的費用及時間,並可提高圖樣間的絕緣可靠性。According to the embodiment of the present invention, a fine circuit pattern and a high-density circuit pattern can be obtained, and the cost and time required for the manufacturing process can be reduced, and the insulation reliability between the patterns can be improved.
本發明可作多樣的變換,可有各式各樣的實施例,因此在本案中,於圖式例示並詳細地說明特定實施例。但是,這並不是將本發明限定於特定的實施例,而是應被理解為包括:被包含在本發明的思想以及技術範圍中的所有的變換、均等物、以及代替物者。說明本發明時,被判斷為對於相關的習知技術的具體說明,反而會造成本發明的要旨不明確的情況時,則省略其詳細的說明。The present invention is susceptible to various modifications and various embodiments are possible, and in the present invention, specific embodiments are illustrated and described in detail. However, the present invention is not limited to the specific embodiments, but is to be construed as including all modifications, equivalents, and alternatives, which are included in the spirit and scope of the invention. In the description of the present invention, the detailed description of the related art will be omitted, and the detailed description of the present invention will be omitted if the gist of the present invention is not clear.
「第一」、「第二」等的用語,僅為用以說明多樣的構成要素,上述構成要素並非藉由上述用語而被限定。上述用語係僅被用於區別一構成要素與其他的構成要素的目的。The terms "first" and "second" are used merely to describe various constituent elements, and the above constituent elements are not limited by the above terms. The above terms are only used to distinguish one component from another.
必須理解地,本案中所用的用語係僅為說明特定的實施例而採用者,並非限定本發明者。單一數的表現,只要在文句之中未明確表現的前提下,包含複數的表現。本案中,「包含」或「具有」等的用語,係用來指定被記載於說明書上的特徵、數字、階段、動作、構成要素、構件、或組合這些者的存在,而並非預先排除一個或一個以上的其他的特徵、數字、階段、動作、構成要素、構件、或組合這些者的存在或是附加可能性。It is to be understood that the phraseology used in the present invention is intended to be a The performance of a single number includes the performance of plurals as long as it is not clearly expressed in the sentence. In this case, the terms "including" or "having" are used to designate the existence of features, numbers, stages, actions, components, components, or combinations described in the specification, and do not preclude one or The presence or additional possibilities of one or more other features, numbers, stages, actions, components, components, or combinations.
以下,基於添附圖式,詳細地說明本發明之印刷電路基板及其製造方法的實施例,使用添附圖式來進行說明時,對於相同且對應的構成要素,係標記相同的符號而省略對此的重複說明。In the following, an embodiment of the printed circuit board and the method of manufacturing the same according to the present invention will be described in detail with reference to the accompanying drawings, and the same reference numerals will be given to the same or corresponding components, and the description will be omitted. Repeat instructions.
第1圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的流程圖,第2圖~第11圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。若參照第2圖~第11圖,則第一電路圖樣10、第二電路圖樣20、凸塊30、絕緣材40、載體50、金屬層52、第一金屬層54、第二金屬層56、電鍍光阻(plating resist)60、導電層62、以及蝕刻光阻64係被表示。1 is a flow chart showing a method of manufacturing a printed circuit board according to a first embodiment of the present invention, and FIGS. 2 to 11 are views showing a process of manufacturing a printed circuit board according to a first embodiment of the present invention. Figure. Referring to FIGS. 2 to 11 , the first circuit pattern 10 , the second circuit pattern 20 , the bumps 30 , the insulating material 40 , the carrier 50 , the metal layer 52 , the first metal layer 54 , and the second metal layer 56 , A plating resist 60, a conductive layer 62, and an etch photoresist 64 are shown.
本發明的第一實施例,在階段S110中,如第2圖~第4圖所示,於載體50上形成第一電路圖樣10。In the first embodiment of the present invention, in the step S110, as shown in Figs. 2 to 4, the first circuit pattern 10 is formed on the carrier 50.
首先,在階段S111中,如第2圖所示,提供一種在其一面已積層有金屬層52之載體50。載體係作為可使第一電路圖樣10形成的支持體。載體,係支持第一電路圖樣,以使在形成第一電路圖樣後,可進行絕緣材40的積層製程。而且,在本實施例中,第一金屬層54及第二金屬層56被積層於載體上。第一金屬層54係被形成於載體上,第二金屬層56係可藉由電解電鍍而被形成於第一金屬層上。First, in stage S111, as shown in Fig. 2, a carrier 50 having a metal layer 52 laminated on one side thereof is provided. The carrier serves as a support for forming the first circuit pattern 10. The carrier supports the first circuit pattern so that after the first circuit pattern is formed, the lamination process of the insulating material 40 can be performed. Moreover, in the present embodiment, the first metal layer 54 and the second metal layer 56 are laminated on the carrier. The first metal layer 54 is formed on the carrier, and the second metal layer 56 is formed on the first metal layer by electrolytic plating.
第一金屬層54及第二金屬層56,係可由相異的材質形成。第一金屬層54,可於後述的第二電路圖樣20的形成過程中,在蝕刻導電層62時,藉由蝕刻溶液而被除去。亦即,形成第一金屬層54的材質,係能以可用與第二電路圖樣20相同的蝕刻溶液來進行蝕刻的材質。在本實施例中,第一金屬層係可與第二電路圖樣同樣地包含銅(Cu)。The first metal layer 54 and the second metal layer 56 may be formed of different materials. The first metal layer 54 can be removed by etching the solution when the conductive layer 62 is etched during the formation of the second circuit pattern 20 to be described later. That is, the material forming the first metal layer 54 is a material which can be etched by using the same etching solution as the second circuit pattern 20. In the present embodiment, the first metal layer may contain copper (Cu) in the same manner as the second circuit pattern.
而且,本實施例中的第二金屬層56,係於第一電路圖樣10的形成時,擔任種子層(Seed Layer)的角色。另外,在形成第二電路圖樣20的製程中,作為用以遮斷第一電路圖樣10被蝕刻溶液蝕刻的角色。因此,第二金屬層56係以與第二電路圖樣20及第一金屬層54相異的材質來形成,使其不會被蝕刻第一金屬層54的蝕刻溶液,亦即蝕刻銅(Cu)的蝕刻溶液所蝕刻。本實施例中的第二金屬層56可包含鎳(Ni)。Moreover, the second metal layer 56 in this embodiment functions as a seed layer when the first circuit pattern 10 is formed. Further, in the process of forming the second circuit pattern 20, it functions as a mask for etching the first circuit pattern 10 to be etched by the etching solution. Therefore, the second metal layer 56 is formed of a material different from the second circuit pattern 20 and the first metal layer 54 so as not to be etched by the etching solution of the first metal layer 54, that is, etching copper (Cu). The etching solution is etched. The second metal layer 56 in this embodiment may contain nickel (Ni).
在階段S112中,於載體50上,亦即,於載體的第二金屬層56,積層感光性物質。然後,在階段S113中,使用光罩等,選擇性地曝光,顯像感光性物質,來除去其一部分。亦即,如第3圖所示,以微影方式,於第二金屬層56形成電鍍光阻60。電鍍光阻係對應要被形成於第二金屬層56上的第一電路圖樣10的形狀而被形成。亦即,對應第一電路圖樣的部分之第二金屬層,沒有被電鍍光阻60覆蓋而露出外部。In step S112, a photosensitive material is laminated on the carrier 50, that is, on the second metal layer 56 of the carrier. Then, in step S113, a photosensitive material is selectively exposed by using a photomask or the like to remove a part thereof. That is, as shown in FIG. 3, the plating resist 60 is formed on the second metal layer 56 by lithography. The plating photoresist is formed corresponding to the shape of the first circuit pattern 10 to be formed on the second metal layer 56. That is, the second metal layer corresponding to the portion of the first circuit pattern is not covered by the plating photoresist 60 to expose the outside.
在階段S114中,於第二金屬層56上形成導電性物質。如第3圖所示,在已形成有選擇性地覆蓋第二金屬層56之電鍍光阻60的狀態下,進行電解電鍍。利用電解電鍍製程,導電性物質可被形成於未被電鍍光阻覆蓋的第二金屬層56上。In step S114, a conductive substance is formed on the second metal layer 56. As shown in Fig. 3, electrolytic plating is performed in a state in which the plating resist 60 of the second metal layer 56 is selectively covered. Using an electrolytic plating process, a conductive material can be formed on the second metal layer 56 that is not covered by the plating photoresist.
藉由電解電鍍,導電性物質被形成於第二金屬層56上之後,剝離電鍍光阻60。如第4圖所示,藉由除去電鍍光阻,第一電路圖樣10可被形成於第二金屬層56上。本實施例中的導電性物質,可使用銅(Cu)。After the electroconductive plating is performed on the second metal layer 56, the electroplating photoresist 60 is peeled off. As shown in FIG. 4, the first circuit pattern 10 can be formed on the second metal layer 56 by removing the plating photoresist. Copper (Cu) can be used as the conductive material in the present embodiment.
在階段S120中,如第5圖所示,於第一電路圖樣10上形成凸塊30。凸塊係使第一電路圖樣與後述的第二電路圖樣20的兩層間導通。作為電性導通的角色的凸塊,可由導電性物質所形成。在本實施例中,於第一電路圖樣上形成凸塊30的製程,係可藉由在第一電路圖樣10上印刷銀(Silver;Ag)墨水而被進行。於被設計成可層間導通的第一電路圖樣的一部分,亦即於要被形成凸塊30之電極墊上,印刷銀墨水。如第5圖所示,藉由銀墨水被硬化,導電性凸塊30可被形成於第一電路圖樣上。在本實施例中,雖然舉出銀墨水為例,但可使用焊油墨(solder ink)等多樣的導電性材質。In stage S120, as shown in FIG. 5, bumps 30 are formed on the first circuit pattern 10. The bumps electrically connect the first circuit pattern to the two layers of the second circuit pattern 20 to be described later. The bump which is a function of electrical conduction can be formed of a conductive substance. In the present embodiment, the process of forming the bumps 30 on the first circuit pattern can be performed by printing silver (Silver; Ag) ink on the first circuit pattern 10. Silver ink is printed on a portion of the first circuit pattern that is designed to be electrically conductive between the layers, that is, on the electrode pads on which the bumps 30 are to be formed. As shown in FIG. 5, the conductive bumps 30 can be formed on the first circuit pattern by the silver ink being hardened. In the present embodiment, silver ink is exemplified, but various conductive materials such as solder ink can be used.
在階段S130中,如第6圖所示,於第一電路圖樣10上積層絕緣材40。藉由絕緣材40被積層,第一電路圖樣被埋入絕緣材中。第一電路圖樣10的各圖樣間,可被絕緣材40填滿。本實施例的絕緣材40,係可於半硬化狀態下積層。因此,第一電路圖樣可被埋入絕緣材中。而且,雖然絕緣材被積層,可是絕緣材會被導電性凸塊30貫通。如第6圖所示,絕緣材40被凸塊30貫通,凸塊30的上端露在絕緣材的外部。In the step S130, as shown in Fig. 6, the insulating material 40 is laminated on the first circuit pattern 10. The first circuit pattern is buried in the insulating material by the insulating material 40 being laminated. The patterns of the first circuit pattern 10 can be filled with the insulating material 40. The insulating material 40 of the present embodiment can be laminated in a semi-hardened state. Therefore, the first circuit pattern can be buried in the insulating material. Further, although the insulating material is laminated, the insulating material is penetrated by the conductive bumps 30. As shown in Fig. 6, the insulating material 40 is penetrated by the bumps 30, and the upper end of the bumps 30 is exposed outside the insulating material.
在階段S140中,如第7圖~第9圖所示,於絕緣材40上形成第二電路圖樣20。在階段S141中,如第7圖所示,於絕緣材及凸塊30上,積層導電層62。導電層62係被形成可覆蓋絕緣材及露出絕緣材的外部的凸塊。此導電層係成為第二電路圖樣20的金屬層。本實施例中,導電層62可為銅材質的銅箔層。導電層,可根據以高溫高壓將銅箔層壓緊在絕緣層40上的製程而被形成。導電層,在被加壓於絕緣層上的過程中,導電層與導電性凸塊可電性連接。In the step S140, as shown in Figs. 7 to 9, a second circuit pattern 20 is formed on the insulating material 40. In step S141, as shown in Fig. 7, a conductive layer 62 is laminated on the insulating material and the bumps 30. The conductive layer 62 is formed as a bump that can cover the insulating material and expose the outside of the insulating material. This conductive layer is the metal layer of the second circuit pattern 20. In this embodiment, the conductive layer 62 may be a copper foil layer of copper. The conductive layer can be formed according to a process of laminating the copper foil against the insulating layer 40 at a high temperature and a high pressure. The conductive layer is electrically connected to the conductive bumps during being pressed onto the insulating layer.
本實施例中的壓緊製程,可由5~30kgf/cm2 的壓力及150℃以上的溫度來進行。與第一金屬層接合的載體,利用高溫高壓的壓緊製程,可從第一金屬層54分離。亦即,在階段S142中,於導電層62的積層製程後,載體50會被除去。The pressing process in this embodiment can be carried out by a pressure of 5 to 30 kgf/cm 2 and a temperature of 150 ° C or more. The carrier bonded to the first metal layer can be separated from the first metal layer 54 by a high temperature and high pressure pressing process. That is, in the step S142, after the lamination process of the conductive layer 62, the carrier 50 is removed.
在階段S143中,如第8圖所示,於導電層62上形成蝕刻光阻(etching resist)64。蝕刻光阻,可藉由對於感光性絕緣材進行微影製程而形成。蝕刻光阻64係選擇性地覆蓋導電層62。In the step S143, as shown in Fig. 8, an etching resist 64 is formed on the conductive layer 62. The etching photoresist can be formed by performing a lithography process on the photosensitive insulating material. The etch photoresist 64 selectively covers the conductive layer 62.
在階段S144中,如第9圖所示,蝕刻未被蝕刻光阻64覆蓋的導電層62及第一金屬層54。本實施例中,導電層62及第一金屬層54係以銅(Cu)形成。藉由供給能蝕刻銅(Cu)金屬層的蝕刻溶液,可蝕刻導電層62及第一金屬層54。在蝕刻製程中,可選擇性地蝕刻未被蝕刻光阻64覆蓋的導電層62,並可除去第一金屬層54。In the step S144, as shown in FIG. 9, the conductive layer 62 and the first metal layer 54 which are not covered by the etching photoresist 64 are etched. In this embodiment, the conductive layer 62 and the first metal layer 54 are formed of copper (Cu). The conductive layer 62 and the first metal layer 54 can be etched by supplying an etching solution capable of etching a copper (Cu) metal layer. In the etching process, the conductive layer 62 not covered by the etch photoresist 64 may be selectively etched, and the first metal layer 54 may be removed.
在此,能蝕刻銅(Cu)金屬層的蝕刻溶液,無法蝕刻由鎳(Ni)形成的第二金屬層56。即使第一金屬層54被除去,第二金屬層56亦不會被蝕刻溶液蝕刻。因此,第一電路圖樣10,利用第二金屬層56而不會被蝕刻。Here, the etching solution of the copper (Cu) metal layer can be etched, and the second metal layer 56 made of nickel (Ni) cannot be etched. Even if the first metal layer 54 is removed, the second metal layer 56 is not etched by the etching solution. Therefore, the first circuit pattern 10 utilizes the second metal layer 56 without being etched.
如第9圖所示,蝕刻製程後,藉由剝離蝕刻光阻64,第二電路圖樣20可被形成於絕緣材40上。As shown in FIG. 9, after the etching process, the second circuit pattern 20 can be formed on the insulating material 40 by peeling off the etching photoresist 64.
接著,在階段S150中,如第10圖所示,加壓第二電路圖樣20,使第二電路圖樣被埋入絕緣材40。如第9圖所示,第二電路圖樣係從絕緣材露出。若以第二電路圖樣露出的狀態來進行壓平製程,使第二電路圖樣被埋入絕緣材,則可提高圖樣間的絕緣可靠性。Next, in step S150, as shown in Fig. 10, the second circuit pattern 20 is pressed to cause the second circuit pattern to be buried in the insulating material 40. As shown in Fig. 9, the second circuit pattern is exposed from the insulating material. If the flattening process is performed in a state in which the second circuit pattern is exposed, and the second circuit pattern is buried in the insulating material, the insulation reliability between the patterns can be improved.
接著,在階段S160中,如第11圖所示,除去覆蓋第一電路圖樣10的第二金屬層56。由與第一金屬層54相異的材質所形成的第二金屬層56,於第二電路圖樣20的形成過程中未被蝕刻,保護第一電路圖樣。Next, in step S160, as shown in Fig. 11, the second metal layer 56 covering the first circuit pattern 10 is removed. The second metal layer 56 formed of a material different from the first metal layer 54 is not etched during the formation of the second circuit pattern 20 to protect the first circuit pattern.
若根據本實施例,鎳(Ni)材質的第二金屬層56,可利用不會蝕刻銅(Cu)材質的第一電路圖樣10及第二電路圖樣20的蝕刻溶液而被除去。如第11圖所示,可使用僅選擇性地蝕刻第二金屬層56的蝕刻溶液,來除去第二金屬層。According to the present embodiment, the second metal layer 56 made of nickel (Ni) can be removed by etching the first circuit pattern 10 of the copper (Cu) material and the etching solution of the second circuit pattern 20. As shown in FIG. 11, an etching solution that selectively etches only the second metal layer 56 can be used to remove the second metal layer.
若根據本發明的第一實施例,第一電路圖樣10,可利用半加成法來實現10/10~15/15μm(線寬/線間距;Line/Space)的高密度形狀,第二電路圖樣20可藉由消減(Subtractive)法來實現20/20~25/25μm(線寬/線間距;Line/Space)。對於必須作成微細電路圖樣的電子元件的構裝面,可使用第一電路圖樣10的微細圖樣,對於用以與外部連接的凸塊或銲錫球的接合面,可使用第二電路圖樣20。According to the first embodiment of the present invention, the first circuit pattern 10 can be realized by a semi-additive method to realize a high-density shape of 10/10~15/15 μm (line width/line spacing; Line/Space), the second circuit The pattern 20 can be realized by a subtractive method of 20/20 to 25/25 μm (line width/line spacing; Line/Space). For the mounting surface of the electronic component to which the fine circuit pattern must be formed, the fine pattern of the first circuit pattern 10 can be used, and the second circuit pattern 20 can be used for the bonding surface of the bump or the solder ball to be connected to the outside.
若根據本發明的第一實施例,對應印刷電路基板要被適用的部分,可用半加成法或消減法分別形成電路圖樣。因此,可實現微細電路圖樣及高密度電路圖樣,並且,可減少在半加成法中所要求的昂貴的除膠渣及化學鍍銅工時。另外,可減少在電解電鍍製程中所要求的製程時間。According to the first embodiment of the present invention, the circuit pattern can be separately formed by a semi-additive method or a subtractive method corresponding to the portion to which the printed circuit board is to be applied. Therefore, a fine circuit pattern and a high-density circuit pattern can be realized, and the expensive desmear and electroless copper plating time required in the semi-additive method can be reduced. In addition, the process time required in the electrolytic plating process can be reduced.
另外,如第11圖所示,藉由第一電路圖樣10及第二電路圖樣20被埋入絕緣材40,可提供被薄型化、已提高絕緣可靠性的印刷電路基板。Further, as shown in Fig. 11, by embedding the insulating material 40 in the first circuit pattern 10 and the second circuit pattern 20, it is possible to provide a printed circuit board which is thinned and has improved insulation reliability.
以下,基於第12圖~第22圖,說明依據本發明的第二實施例之印刷電路基板的製造方法。Hereinafter, a method of manufacturing a printed circuit board according to a second embodiment of the present invention will be described based on FIGS. 12 to 22.
第12圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的流程圖,第13圖~第22圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。若參照第13圖~第22圖,則第一電路圖樣10、第二電路圖樣20、凸塊30、絕緣材40、載體50、金屬層52、電鍍光阻60、種子層70、以及電鍍光阻72係被表示。12 is a flow chart showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention, and FIGS. 13 to 22 are views showing a process of manufacturing a printed circuit board according to a second embodiment of the present invention. Figure. Referring to FIGS. 13 to 22, the first circuit pattern 10, the second circuit pattern 20, the bumps 30, the insulating material 40, the carrier 50, the metal layer 52, the plating photoresist 60, the seed layer 70, and the plating light Block 72 is shown.
本發明的第二實施例,在階段S210中,如第13圖~第15圖所示,於載體50上形成第一電路圖樣10。In the second embodiment of the present invention, in step S210, as shown in Figs. 13 to 15, a first circuit pattern 10 is formed on the carrier 50.
首先,在階段S211中,如第13圖所示,提供一種在其一面已積層有金屬層52之載體50。載體,根據第一實施例的說明,係作為可使第一電路圖樣10形成的支持體,用以支持第一電路圖樣,以使在形成第一電路圖樣後,可進行絕緣材40的積層製程。First, in stage S211, as shown in Fig. 13, a carrier 50 having a metal layer 52 laminated on one side thereof is provided. The carrier, as described in the first embodiment, serves as a support for forming the first circuit pattern 10 for supporting the first circuit pattern so that the lamination process of the insulating material 40 can be performed after the first circuit pattern is formed. .
接著,在階段S212中,於載體50上,亦即,於載體的金屬層52上,積層感光性物質。然後,在階段S213中,使用光罩等,選擇性地曝光、顯像感光性物質,來除去其一部分。亦即,如第14圖所示,以微影方式,於載體的金屬層52上形成電鍍光阻60。電鍍光阻,係對應欲形成於金屬層52上的第一電路圖樣10的形狀而被形成。亦即,對應第一電路圖樣的部分之金屬層52,沒有被電鍍光阻60覆蓋而露出外部。Next, in step S212, a photosensitive material is laminated on the carrier 50, that is, on the metal layer 52 of the carrier. Then, in step S213, a photosensitive material is selectively exposed and developed using a photomask or the like to remove a part thereof. That is, as shown in Fig. 14, a plating resist 60 is formed on the metal layer 52 of the carrier by lithography. The plating resist is formed corresponding to the shape of the first circuit pattern 10 to be formed on the metal layer 52. That is, the portion of the metal layer 52 corresponding to the first circuit pattern is not covered by the plating photoresist 60 to expose the outside.
在階段S214中,於金屬層52上形成導電性物質。如第14圖所示,在已形成有選擇性地覆蓋金屬層52之電鍍光阻60的狀態下,進行電解電鍍。利用電解電鍍製程,導電性物質可被形成於未被電鍍光阻覆蓋的金屬層上。In step S214, a conductive substance is formed on the metal layer 52. As shown in Fig. 14, electrolytic plating is performed in a state in which the plating resist 60 of the metal layer 52 is selectively covered. With the electrolytic plating process, the conductive material can be formed on the metal layer not covered by the plating photoresist.
藉由電解電鍍,導電性物質被形成於金屬層52上之後,剝離電鍍光阻60。如第15圖所示,藉由除去電鍍光阻,第一電路圖樣10可被形成於金屬層上。本實施例的導電性物質中,係可由銅(Cu)形成。After the conductive material is formed on the metal layer 52 by electrolytic plating, the plating resist 60 is peeled off. As shown in Fig. 15, the first circuit pattern 10 can be formed on the metal layer by removing the plating resist. In the conductive material of the present embodiment, it may be formed of copper (Cu).
在階段S220中,如第16圖所示,於第一電路圖樣10上形成凸塊30。然後,在階段S230中,如第17圖所示,於第一電路圖樣10上積層絕緣材40,使第一電路圖樣被埋入絕緣材40中。而且,凸塊30貫通絕緣材而露出於外部。在本實施例中的第一電路圖樣上形成凸塊30的階段S220及在第一電路圖樣上積層絕緣材的階段S230,可藉由與本發明的第一實施例相同製程來進行。導電性凸塊30及絕緣材的材質,亦可使用與第一實施例相同者。In stage S220, as shown in Fig. 16, a bump 30 is formed on the first circuit pattern 10. Then, in step S230, as shown in Fig. 17, the insulating material 40 is laminated on the first circuit pattern 10, so that the first circuit pattern is buried in the insulating material 40. Further, the bump 30 penetrates the insulating material and is exposed to the outside. The stage S220 of forming the bumps 30 on the first circuit pattern in the present embodiment and the step S230 of laminating the insulating material on the first circuit pattern can be performed by the same process as the first embodiment of the present invention. The material of the conductive bump 30 and the insulating material may be the same as that of the first embodiment.
接著,在階段S240中,如第18圖~第21圖所示,於絕緣材40上形成第二電路圖樣20。本實施例中的第二電路圖樣,可藉由半加成法來形成。Next, in step S240, as shown in Figs. 18 to 21, a second circuit pattern 20 is formed on the insulating material 40. The second circuit pattern in this embodiment can be formed by a semi-additive method.
在階段S241中,如第18圖所示,於絕緣材40及凸塊30上,形成種子層70。種子層係被形成可覆蓋絕緣材及露出絕緣材的外部之凸塊。另外,種子層與凸塊係電性連接。種子層70係在電解電鍍過程中,第二電路圖樣20要被形成的基盤層。本發明的第二實施例中的種子層70,係為可根據電解電鍍過程來形成銅(Cu)材質的第二電路圖樣20之薄板的銅箔層(約1~3μm)。本實施例中的種子層70,係如第一實施例的說明,可將銅箔層以高溫高壓壓緊在絕緣材上的製程來形成。In step S241, as shown in Fig. 18, a seed layer 70 is formed on the insulating material 40 and the bumps 30. The seed layer is formed to cover the insulating material and expose the outer bumps of the insulating material. In addition, the seed layer is electrically connected to the bump. The seed layer 70 is a base layer to be formed in the second circuit pattern 20 during electrolytic plating. The seed layer 70 in the second embodiment of the present invention is a copper foil layer (about 1 to 3 μm) of a thin plate of a second circuit pattern 20 of a copper (Cu) material according to an electrolytic plating process. The seed layer 70 in this embodiment is formed by a process in which a copper foil layer is pressed against an insulating material at a high temperature and a high pressure as described in the first embodiment.
另外,若根據第一實施例的說明,與金屬層52接合的載體50,可利用高溫高壓的壓緊製程,從金屬層52分離。亦即,在階段S242中,於種子層70的積層製程後,載體50係可被除去。Further, according to the description of the first embodiment, the carrier 50 bonded to the metal layer 52 can be separated from the metal layer 52 by a high temperature and high pressure pressing process. That is, in stage S242, after the layering process of the seed layer 70, the carrier 50 can be removed.
然後,在階段S243中,如第19圖所示,於種子層70及金屬層52上,形成電鍍光阻72。電鍍光阻72可藉由對於感光性絕緣材進行微影製程而形成。電鍍光阻,係整體地覆蓋金屬層52,並選擇性地覆蓋種子層。Then, in step S243, as shown in Fig. 19, a plating resist 72 is formed on the seed layer 70 and the metal layer 52. The plating resist 72 can be formed by performing a lithography process on the photosensitive insulating material. The electroplated photoresist is integrally covered with a metal layer 52 and selectively covers the seed layer.
電鍍光阻72,係被形成可使種子層70對應第二電路圖樣20的形狀而被開放。在階段S244中,進行電解電鍍,於未被電鍍光阻覆蓋的種子層70上,形成導電性物質。被形成於種子層上的導電性物質,係成為第二電路圖樣20。因此,導電性物質可為銅(Cu)。The plating resist 72 is formed such that the seed layer 70 is opened corresponding to the shape of the second circuit pattern 20. In the step S244, electrolytic plating is performed to form a conductive material on the seed layer 70 which is not covered by the plating photoresist. The conductive material formed on the seed layer is the second circuit pattern 20. Therefore, the conductive material may be copper (Cu).
電解電鍍過程之後,在階段S245中,如第20圖所示,除去電鍍光阻72。藉由電鍍光阻被剝離,種子層70及金屬層52被露出外部。After the electrolytic plating process, in step S245, as shown in Fig. 20, the plating resist 72 is removed. The plating layer is peeled off, and the seed layer 70 and the metal layer 52 are exposed to the outside.
在階段S246中,如第21圖所示,蝕刻被露出在外部的種子層70及金屬層52。快速蝕刻(Flash etching)被形成於第二電路圖樣20的圖樣間的種子層70。並且,蝕刻覆蓋第一電路圖樣10的金屬層52。若根據本發明的第二實施例,可供給蝕刻溶液,蝕刻金屬性物質的種子層70及金屬層52。若種子層及金屬層被蝕刻,則第一電路圖樣係被埋入絕緣材40中,而第二電路圖樣20則被形成於絕緣材40上。In step S246, as shown in Fig. 21, the seed layer 70 and the metal layer 52 exposed to the outside are etched. Flash etching is formed on the seed layer 70 between the patterns of the second circuit pattern 20. Also, the metal layer 52 covering the first circuit pattern 10 is etched. According to the second embodiment of the present invention, the etching solution can be supplied to etch the seed layer 70 and the metal layer 52 of the metallic substance. If the seed layer and the metal layer are etched, the first circuit pattern is buried in the insulating material 40, and the second circuit pattern 20 is formed on the insulating material 40.
接著,在階段S250中,如第22圖所示,加壓被形成於絕緣材40上的第二電路圖樣20,使第二電路圖樣被埋入絕緣材。如第21圖所示,第二電路圖樣係從絕緣材40上露出。以第二電路圖樣被露出的狀態,來進行壓平製程。藉由第二電路圖樣被埋入絕緣材,圖樣間的絕緣可靠性可被提高。Next, in step S250, as shown in Fig. 22, the second circuit pattern 20 formed on the insulating material 40 is pressurized, and the second circuit pattern is buried in the insulating material. As shown in Fig. 21, the second circuit pattern is exposed from the insulating material 40. The flattening process is performed in a state in which the second circuit pattern is exposed. By embedding the insulating material in the second circuit pattern, the insulation reliability between the patterns can be improved.
若根據本發明的第二實施例,第一電路圖樣10及第二電路圖樣20,係可藉由半加成法,形成10/10~15/15μm(線寬/線間距;Line/Space)的高密度微細圖樣。藉由形成微細電路圖樣,成為可實現對於電子元件的構裝及導線接合有利的微細間距。According to the second embodiment of the present invention, the first circuit pattern 10 and the second circuit pattern 20 can be formed by a semi-additive method to form 10/10~15/15μm (line width/line spacing; Line/Space). High-density fine pattern. By forming a fine circuit pattern, it is possible to realize fine pitches which are advantageous for the mounting of electronic components and wire bonding.
另外,如第22圖所示,藉由第一電路圖樣10及第二電路圖樣20被埋入絕緣材40,可提供被薄型化、已提高絕緣可靠性的印刷電路基板。Further, as shown in Fig. 22, by embedding the insulating material 40 in the first circuit pattern 10 and the second circuit pattern 20, it is possible to provide a printed circuit board which is thinned and has improved insulation reliability.
以下,基於第23圖~第32圖,說明依據本發明的第三實施例的印刷電路基版的製造方法。Hereinafter, a method of manufacturing a printed circuit board according to a third embodiment of the present invention will be described based on Figs. 23 to 32.
第23圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的流程圖,第24圖~第32圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。若參照第24圖~第32圖,則第一電路圖樣10、第二電路圖樣20、凸塊30、絕緣材40、載體50、金屬層52、蝕刻光阻80、導電層82、以及蝕刻光阻84係被表示。Figure 23 is a flowchart showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention, and Figs. 24 to 32 are diagrams showing a process of manufacturing a printed circuit board according to a third embodiment of the present invention. Figure. Referring to FIGS. 24 to 32, the first circuit pattern 10, the second circuit pattern 20, the bumps 30, the insulating material 40, the carrier 50, the metal layer 52, the etching photoresist 80, the conductive layer 82, and the etching light The resistance 84 series is indicated.
本發明的第三實施例,在階段S310中,如第24圖~第26圖所示,於載體上形成第一電路圖樣10。In the third embodiment of the present invention, in the step S310, as shown in Figs. 24 to 26, the first circuit pattern 10 is formed on the carrier.
若根據本實施例,在階段S311中,如第24圖所示,提供一種在其一面已積層有金屬層52之載體50。載體係如第一實施例的說明,作為可使第一電路圖樣10形成的支持體,支持第一電路圖樣,以使在形成第一電路圖樣後,可進行絕緣材40的積層製程。According to the present embodiment, in the stage S311, as shown in Fig. 24, a carrier 50 having a metal layer 52 laminated on one side thereof is provided. As described in the first embodiment, the carrier supports the first circuit pattern as a support for forming the first circuit pattern 10 so that the lamination process of the insulating material 40 can be performed after the first circuit pattern is formed.
在階段S312中,於載體50上,亦即於載體的金屬層52上,積層感光性物質。然後,在階段S313中,使用光罩等,選擇性地曝光、顯像感光性物質,來除去其一部分。亦即,如第25圖所示,以微影方式,於載體金屬層52上,形成蝕刻光阻80,蝕刻光阻80係覆蓋對應第一電路圖樣10的部分之金屬層。In stage S312, a photosensitive material is laminated on the carrier 50, that is, on the metal layer 52 of the carrier. Then, in step S313, a photosensitive material is selectively exposed and developed using a photomask or the like to remove a part thereof. That is, as shown in Fig. 25, an etch photoresist 80 is formed on the carrier metal layer 52 by lithography, and the etch photoresist 80 covers the metal layer corresponding to the portion of the first circuit pattern 10.
本發明的第三實施例中,藉由選擇性地蝕刻金屬層52,第一電路圖樣10被形成。在階段S314中,以蝕刻光阻80已被形成於金屬層52上的狀態,供給蝕刻溶液,選擇性地蝕刻金屬層。被蝕刻光阻80覆蓋的金屬層沒有被蝕刻,而保留於載體50上。因此,如第26圖所示,藉由除去蝕刻光阻80,第一電路圖樣10會被形成於載體50上。In a third embodiment of the invention, the first circuit pattern 10 is formed by selectively etching the metal layer 52. In the step S314, the etching solution is supplied in a state where the etching photoresist 80 has been formed on the metal layer 52, and the metal layer is selectively etched. The metal layer covered by the etched photoresist 80 is not etched but remains on the carrier 50. Therefore, as shown in Fig. 26, the first circuit pattern 10 is formed on the carrier 50 by removing the etching photoresist 80.
然後,在階段S320中,如第27圖所示,於第一電路圖樣10上形成導電性凸塊30。接著,在階段S330中,如第28圖所示,於第一電路圖樣10上積層絕緣材40,使第一電路圖樣被埋入絕緣材40中。並且,凸塊30貫通絕緣材而露在外部。本實施例中的在第一電路圖樣上形成凸塊30的階段S320及在第一電路圖樣上積層絕緣材40的階段S330,可利用與本發明的第一實施例相同的製程來進行。導電性凸塊及絕緣材40的材質,亦可使用與第一實施例相同者。Then, in step S320, as shown in Fig. 27, the conductive bumps 30 are formed on the first circuit pattern 10. Next, in step S330, as shown in Fig. 28, the insulating material 40 is laminated on the first circuit pattern 10, and the first circuit pattern is buried in the insulating material 40. Further, the bump 30 penetrates the insulating material and is exposed to the outside. The stage S320 of forming the bumps 30 on the first circuit pattern and the stage S330 of laminating the insulating material 40 on the first circuit pattern in this embodiment can be performed by the same process as the first embodiment of the present invention. The material of the conductive bumps and the insulating material 40 may be the same as that of the first embodiment.
在階段S340中,如第29圖~第31圖所示,於絕緣材40上形成第二電路圖樣20。在階段S341中,如第29圖所示,於絕緣材及凸塊30上,積層導電層82。導電層82係被形成可覆蓋絕緣材及露出絕緣材的外部的凸塊。此導電層係成為第二電路圖樣20的金屬層。本實施例的導電層可為銅材質的銅箔層。導電層82,係如本發明的第一實施例的說明,可根據以高溫高壓將銅箔層壓緊在絕緣層上的製程而被形成。利用壓緊製程,可電性連接導電層與凸塊。In step S340, as shown in Figs. 29 to 31, a second circuit pattern 20 is formed on the insulating material 40. In the step S341, as shown in Fig. 29, the conductive layer 82 is laminated on the insulating material and the bumps 30. The conductive layer 82 is formed as a bump that covers the insulating material and exposes the outside of the insulating material. This conductive layer is the metal layer of the second circuit pattern 20. The conductive layer of this embodiment may be a copper foil layer of copper. The conductive layer 82, as explained in the first embodiment of the present invention, can be formed in accordance with a process of laminating a copper foil against an insulating layer at a high temperature and a high pressure. The conductive layer and the bumps can be electrically connected by a pressing process.
本發明的第三實施例中的壓緊製程,可由5~30kgf/cm2 的壓力及150℃以上的溫度來進行。與絕緣材40及第一電路圖樣10接合的載體50,可利用高溫高壓的壓緊製程,從絕緣材及第一電路圖樣10分離。亦即,在階段S342中,於導電層82的積層製程後,載體50會被除去。The pressing process in the third embodiment of the present invention can be carried out by a pressure of 5 to 30 kgf/cm 2 and a temperature of 150 ° C or more. The carrier 50 bonded to the insulating material 40 and the first circuit pattern 10 can be separated from the insulating material and the first circuit pattern 10 by a high temperature and high pressure pressing process. That is, in the step S342, after the lamination process of the conductive layer 82, the carrier 50 is removed.
在階段S343中,如第30圖所示,於導電層82及第一電路圖樣10上形成蝕刻光阻84。若根據第一實施例的說明,蝕刻光阻84可藉由對於被積層於導電層82上的感光性絕緣材進行微影製程來形成。並且,第一電路圖樣10及絕緣材40係被蝕刻光阻84覆蓋。另一方面,蝕刻光阻84係部分地覆蓋導電層82。亦即,蝕刻光阻84僅覆蓋對應第二第路圖樣20的導電層82的一部分。In step S343, as shown in FIG. 30, an etching photoresist 84 is formed on the conductive layer 82 and the first circuit pattern 10. According to the description of the first embodiment, the etching photoresist 84 can be formed by performing a lithography process on the photosensitive insulating material laminated on the conductive layer 82. Further, the first circuit pattern 10 and the insulating material 40 are covered by the etching photoresist 84. On the other hand, the etch photoresist 84 partially covers the conductive layer 82. That is, the etch photoresist 84 covers only a portion of the conductive layer 82 corresponding to the second first pass pattern 20.
在階段S344中,如第30圖所示,以形成有蝕刻光阻84的狀態,供給蝕刻溶液,選擇性地蝕刻導電層82。被蝕刻光阻84覆蓋的第一電路圖樣10、絕緣材40、以及導電層82的一部分,不會被蝕刻。如第31圖所示,蝕刻製程之後,若除去蝕刻光阻84,則第二電路圖樣20被形成於絕緣材40上。In step S344, as shown in Fig. 30, an etching solution is supplied in a state in which the etching photoresist 84 is formed, and the conductive layer 82 is selectively etched. The first circuit pattern 10, the insulating material 40, and a portion of the conductive layer 82 covered by the etched photoresist 84 are not etched. As shown in FIG. 31, after the etching process, if the etching photoresist 84 is removed, the second circuit pattern 20 is formed on the insulating material 40.
然後,在階段S350中,如第32圖所示,加壓第二電路圖樣20,使第二電路圖樣被埋入絕緣材40。如第31圖所示,第二電路圖樣係露出絕緣材上,於第二電路圖樣露出的狀態下,進行壓平製程。藉由第二電路圖樣被埋入絕緣材,圖樣間的絕緣可靠性可被提高。Then, in step S350, as shown in Fig. 32, the second circuit pattern 20 is pressurized so that the second circuit pattern is buried in the insulating material 40. As shown in Fig. 31, the second circuit pattern is exposed on the insulating material, and the flattening process is performed in a state where the second circuit pattern is exposed. By embedding the insulating material in the second circuit pattern, the insulation reliability between the patterns can be improved.
若根據本發明的第三實施例,藉由以消減法來形成第一電路圖樣10及第二電路圖樣20,可減少在半加成法中所要求的昂貴的除膠渣及化學鍍銅工時。另外,亦可減少在電解電鍍製程中所要求的製程時間。According to the third embodiment of the present invention, by forming the first circuit pattern 10 and the second circuit pattern 20 by the subtraction method, the expensive desmear and electroless copper plating required in the semi-additive method can be reduced. Time. In addition, the processing time required in the electrolytic plating process can also be reduced.
本發明的第三實施例中的第一電路圖樣10,係藉由蝕刻製程被形成。因此,蝕刻製程特性上,露出外部的圖樣上部的寬度,係被形成較被埋入絕緣材40中的圖樣下部的寬度大。亦即,藉由側面蝕刻,電路圖樣的剖面成為梯形。藉由第一電路圖樣10的上部的寬度被形成較寬,導線接合時,導線接合的接合面積可較寬。因此,可提高導線接合的可靠性。The first circuit pattern 10 in the third embodiment of the present invention is formed by an etching process. Therefore, in the etching process characteristics, the width of the upper portion of the pattern which is exposed to the outside is formed to be larger than the width of the lower portion of the pattern buried in the insulating material 40. That is, the profile of the circuit pattern becomes trapezoidal by side etching. By the width of the upper portion of the first circuit pattern 10 being formed wider, the bonding area of the wire bonding can be wider when the wires are bonded. Therefore, the reliability of wire bonding can be improved.
另外,如第32圖所示,藉由第一電路圖樣10及第二電路圖樣20被埋入絕緣材40,可提供被薄型化、已提高絕緣可靠性的印刷電路基板。Further, as shown in Fig. 32, by embedding the insulating material 40 in the first circuit pattern 10 and the second circuit pattern 20, it is possible to provide a printed circuit board which is thinned and has improved insulation reliability.
以上,已參照本發明的較佳實施例作說明,但請理解,只要是該技術領域中具有通常知識者,便可於不脫離被記載於申請專利範圍中的本發明的思想及領域的範圍內,將本發明作多樣地修正及變更。The invention has been described with reference to the preferred embodiments of the present invention, but it is understood that the scope of the invention and the scope of the invention described in the claims The present invention has been variously modified and changed.
10...第一電路圖樣10. . . First circuit pattern
20...第二電路圖樣20. . . Second circuit pattern
30...凸塊30. . . Bump
40...絕緣材40. . . Insulating material
50...載體50. . . Carrier
52...金屬層52. . . Metal layer
54...第一金屬層54. . . First metal layer
56...第二金屬層56. . . Second metal layer
60...電鍍光阻60. . . Electroplated photoresist
62...導電層62. . . Conductive layer
64...蝕刻光阻64. . . Etching photoresist
70...種子層70. . . Seed layer
72...電鍍光阻72. . . Electroplated photoresist
80...蝕刻光阻80. . . Etching photoresist
82...導電層82. . . Conductive layer
84...蝕刻光阻84. . . Etching photoresist
第1圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的流程圖。Fig. 1 is a flow chart showing a method of manufacturing a printed circuit board according to a first embodiment of the present invention.
第2圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 2 is a process diagram showing a method of manufacturing a printed circuit board according to a first embodiment of the present invention.
第3圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 3 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第4圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 4 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第5圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 5 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第6圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 6 is a process view showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第7圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 7 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第8圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 8 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第9圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 9 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第10圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Fig. 10 is a process diagram showing a method of manufacturing a printed circuit board according to the first embodiment of the present invention.
第11圖係表示依據本發明的第一實施例之印刷電路基板的製造方法的製程圖。Figure 11 is a process diagram showing a method of manufacturing a printed circuit board according to a first embodiment of the present invention.
第12圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的流程圖。Fig. 12 is a flow chart showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第13圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 13 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第14圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 14 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第15圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Fig. 15 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第16圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 16 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第17圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 17 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第18圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 18 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第19圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 19 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第20圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 20 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第21圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 21 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第22圖係表示依據本發明的第二實施例之印刷電路基板的製造方法的製程圖。Figure 22 is a process diagram showing a method of manufacturing a printed circuit board according to a second embodiment of the present invention.
第23圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的流程圖。Figure 23 is a flow chart showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第24圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 24 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第25圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 25 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第26圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 26 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第27圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 27 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第28圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 28 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第29圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 29 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第30圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 30 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第31圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 31 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
第32圖係表示依據本發明的第三實施例之印刷電路基板的製造方法的製程圖。Figure 32 is a process diagram showing a method of manufacturing a printed circuit board according to a third embodiment of the present invention.
Claims (7)
Applications Claiming Priority (1)
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KR1020080042173A KR101008676B1 (en) | 2008-05-07 | 2008-05-07 | Printed Circuit Board Manufacturing Method |
Publications (2)
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TW201002168A TW201002168A (en) | 2010-01-01 |
TWI398205B true TWI398205B (en) | 2013-06-01 |
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TW098106010A TWI398205B (en) | 2008-05-07 | 2009-02-25 | Method for manufacturing printed circuit board |
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JP (1) | JP4752045B2 (en) |
KR (1) | KR101008676B1 (en) |
TW (1) | TWI398205B (en) |
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JP5143266B1 (en) | 2011-09-30 | 2013-02-13 | 株式会社東芝 | Flexible printed wiring board manufacturing apparatus and manufacturing method |
TWI499364B (en) * | 2014-01-03 | 2015-09-01 | Subtron Technology Co Ltd | Core substrate and circuit board manufacturing method |
KR102465117B1 (en) * | 2017-11-29 | 2022-11-11 | 주식회사 잉크테크 | Method for manufacturing printed circuit board |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW556453B (en) * | 2002-02-01 | 2003-10-01 | Shiue-Fang Wu | PCB with inlaid outerlayer circuits and production methods thereof |
JP2004063701A (en) * | 2002-07-26 | 2004-02-26 | Yamaichi Electronics Co Ltd | Manufacturing method of flexible printed wiring board |
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JPH08264939A (en) * | 1995-03-28 | 1996-10-11 | Toshiba Corp | Manufacture of printed wiring board |
JP2001144444A (en) * | 1999-11-17 | 2001-05-25 | Ibiden Co Ltd | Multilayer printed wiring board and double sided printed wiring board and method of production |
JP2002252258A (en) * | 1999-12-27 | 2002-09-06 | Hoya Corp | Method for manufacturing contact component and multi- layer interconnection substrate, and wafer batch- contact board |
JP3636290B2 (en) * | 2000-03-27 | 2005-04-06 | 株式会社東芝 | Printed wiring board and manufacturing method thereof |
KR100728758B1 (en) | 2006-03-27 | 2007-06-19 | 삼성전기주식회사 | Pattern coil substrate and manufacturing method |
KR100729939B1 (en) * | 2006-05-09 | 2007-06-19 | 삼성전기주식회사 | Multi-layer printed circuit board manufacturing method |
KR100782402B1 (en) * | 2006-10-24 | 2007-12-07 | 삼성전기주식회사 | Printed Circuit Board and Manufacturing Method |
-
2008
- 2008-05-07 KR KR1020080042173A patent/KR101008676B1/en not_active Expired - Fee Related
- 2008-10-08 JP JP2008262176A patent/JP4752045B2/en not_active Expired - Fee Related
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Publication number | Priority date | Publication date | Assignee | Title |
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TW556453B (en) * | 2002-02-01 | 2003-10-01 | Shiue-Fang Wu | PCB with inlaid outerlayer circuits and production methods thereof |
JP2004063701A (en) * | 2002-07-26 | 2004-02-26 | Yamaichi Electronics Co Ltd | Manufacturing method of flexible printed wiring board |
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KR101008676B1 (en) | 2011-01-18 |
JP2009272600A (en) | 2009-11-19 |
TW201002168A (en) | 2010-01-01 |
JP4752045B2 (en) | 2011-08-17 |
KR20090116311A (en) | 2009-11-11 |
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