TWI367221B - Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process - Google Patents
Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the processInfo
- Publication number
- TWI367221B TWI367221B TW096148632A TW96148632A TWI367221B TW I367221 B TWI367221 B TW I367221B TW 096148632 A TW096148632 A TW 096148632A TW 96148632 A TW96148632 A TW 96148632A TW I367221 B TWI367221 B TW I367221B
- Authority
- TW
- Taiwan
- Prior art keywords
- composition
- integrated circuit
- material layer
- semiconductor integrated
- circuit device
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Structural Engineering (AREA)
- Architecture (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060131034A KR100816735B1 (ko) | 2006-12-20 | 2006-12-20 | 반사방지 하드마스크 조성물, 이를 이용한 패턴화된 재료형상의 제조방법 및 반도체 집적회로 디바이스 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200833732A TW200833732A (en) | 2008-08-16 |
| TWI367221B true TWI367221B (en) | 2012-07-01 |
Family
ID=39411665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW096148632A TWI367221B (en) | 2006-12-20 | 2007-12-19 | Hardmask composition having antireflective properties, process for forming patterned material layer by using the composition and semiconductor integrated circuit device produced using the process |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7655386B2 (zh) |
| KR (1) | KR100816735B1 (zh) |
| CN (2) | CN101205291B (zh) |
| TW (1) | TWI367221B (zh) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI414893B (zh) * | 2006-03-14 | 2013-11-11 | Jsr Corp | 底層膜形成用組成物及圖型之形成方法 |
| KR100908601B1 (ko) * | 2007-06-05 | 2009-07-21 | 제일모직주식회사 | 반사방지 하드마스크 조성물 및 이를 이용한 기판상 재료의패턴화 방법 |
| KR101266291B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 반도체 집적회로디바이스의 제조방법 |
| KR101266290B1 (ko) * | 2008-12-30 | 2013-05-22 | 제일모직주식회사 | 레지스트 하층막용 하드마스크 조성물 및 이를 이용한 반도체 집적회로 디바이스의 제조방법 |
| KR101344794B1 (ko) * | 2009-12-31 | 2014-01-16 | 제일모직주식회사 | 레지스트 하층막용 방향족 고리 함유 중합체 및 이를 포함하는 레지스트 하층막 조성물 |
| KR101432605B1 (ko) * | 2010-12-16 | 2014-08-21 | 제일모직주식회사 | 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| KR101344792B1 (ko) | 2010-12-17 | 2013-12-24 | 제일모직주식회사 | 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| KR101423171B1 (ko) * | 2010-12-30 | 2014-07-25 | 제일모직 주식회사 | 하드마스크 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| US8906590B2 (en) | 2011-03-30 | 2014-12-09 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
| KR101855506B1 (ko) | 2011-10-13 | 2018-05-08 | 주식회사 동진쎄미켐 | 방향족 고리 함유 고분자 및 이를 포함하는 레지스트 하층막 조성물 |
| US8906592B2 (en) | 2012-08-01 | 2014-12-09 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
| KR101655394B1 (ko) | 2013-04-25 | 2016-09-07 | 제일모직 주식회사 | 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| KR101674989B1 (ko) | 2013-05-21 | 2016-11-22 | 제일모직 주식회사 | 레지스트 하층막용 조성물, 이를 사용한 패턴 형성 방법 및 상기 패턴을 포함하는 반도체 집적회로 디바이스 |
| US9152051B2 (en) | 2013-06-13 | 2015-10-06 | Az Electronics Materials (Luxembourg) S.A.R.L. | Antireflective coating composition and process thereof |
| KR101582462B1 (ko) * | 2013-08-23 | 2016-01-06 | (주)디엔에프 | 신규한 중합체 및 이를 포함하는 조성물 |
| KR102190384B1 (ko) * | 2013-10-14 | 2020-12-14 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| CN104710588B (zh) | 2013-12-12 | 2017-04-12 | 罗门哈斯电子材料有限公司 | 用于底层的芳族树脂 |
| US9880469B2 (en) * | 2014-07-15 | 2018-01-30 | Rohm And Haas Electronic Materials Llc | Resins for underlayers |
| US9908990B2 (en) | 2015-04-17 | 2018-03-06 | Samsung Sdi Co., Ltd. | Organic layer composition, organic layer, and method of forming patterns |
| KR102324658B1 (ko) * | 2015-04-22 | 2021-11-10 | 에스케이이노베이션 주식회사 | 신규한 레지스트 하층막 형성용 중합체, 이를 포함하는 레지스트 하층막 조성물 및 이를 이용한 레지스트 하층막의 형성 방법 |
| KR101884447B1 (ko) | 2015-07-06 | 2018-08-01 | 삼성에스디아이 주식회사 | 모노머, 유기막 조성물, 유기막, 및 패턴형성방법 |
| JP7100296B2 (ja) * | 2016-04-18 | 2022-07-13 | 日産化学株式会社 | ナフトールアラルキル樹脂を含むレジスト下層膜形成組成物 |
| CN118955829A (zh) * | 2017-12-20 | 2024-11-15 | 默克专利有限公司 | 乙炔基衍生的复合物、包含其的组合物、通过其制造涂层的方法以及制造包含该涂层的器件的方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4509949A (en) * | 1983-06-13 | 1985-04-09 | The B. F. Goodrich Company | Water thickening agents consisting of copolymers of crosslinked acrylic acids and esters |
| JP2934785B2 (ja) * | 1990-06-22 | 1999-08-16 | 株式会社リコー | 新規なアルキルピレン化合物及びその製造方法 |
| JPH1124271A (ja) * | 1997-06-30 | 1999-01-29 | Kurarianto Japan Kk | 高耐熱性放射線感応性レジスト組成物 |
| DE10228763A1 (de) * | 2002-06-27 | 2004-01-29 | Infineon Technologies Ag | Monomere für Isoliermaterialien in Aluminium- und Kupfertechnologien |
| CN101027336B (zh) * | 2004-09-01 | 2010-12-08 | 大日本油墨化学工业株式会社 | 环氧树脂组合物、其固化物、半导体封装材料、新型酚醛树脂、新型环氧树脂、新型酚醛树脂的制造方法及新型环氧树脂的制造方法 |
| DE102004043497A1 (de) * | 2004-09-06 | 2006-03-09 | Basf Ag | Synthese von Polynaphthalinen und ihre Verwendung |
| US7829638B2 (en) * | 2005-05-09 | 2010-11-09 | Cheil Industries, Inc. | Antireflective hardmask composition and methods for using same |
-
2006
- 2006-12-20 KR KR1020060131034A patent/KR100816735B1/ko active Active
-
2007
- 2007-12-19 TW TW096148632A patent/TWI367221B/zh active
- 2007-12-20 CN CN2007103022407A patent/CN101205291B/zh active Active
- 2007-12-20 CN CN2010105662293A patent/CN102060981B/zh active Active
- 2007-12-20 US US12/003,152 patent/US7655386B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US7655386B2 (en) | 2010-02-02 |
| US20080153033A1 (en) | 2008-06-26 |
| CN101205291A (zh) | 2008-06-25 |
| CN101205291B (zh) | 2011-02-16 |
| CN102060981B (zh) | 2012-11-21 |
| KR100816735B1 (ko) | 2008-03-25 |
| CN102060981A (zh) | 2011-05-18 |
| TW200833732A (en) | 2008-08-16 |
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