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TWI364161B - High frequency power amplifier - Google Patents

High frequency power amplifier Download PDF

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Publication number
TWI364161B
TWI364161B TW097122834A TW97122834A TWI364161B TW I364161 B TWI364161 B TW I364161B TW 097122834 A TW097122834 A TW 097122834A TW 97122834 A TW97122834 A TW 97122834A TW I364161 B TWI364161 B TW I364161B
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Prior art keywords
frequency
circuit
transistor
resonance
resonant
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TW097122834A
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Chinese (zh)
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TW200941927A (en
Inventor
Gotou Seiki
Inoue Akira
Kanaya Ko
Watanabe Shinsuke
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/602—Combinations of several amplifiers
    • H03F3/604—Combinations of several amplifiers using FET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
    • H01L2223/64—Impedance arrangements
    • H01L2223/66—High-frequency adaptations
    • H01L2223/6644—Packaging aspects of high-frequency amplifiers
    • H01L2223/6655—Matching arrangements, e.g. arrangement of inductive and capacitive components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1905—Shape
    • H01L2924/19051—Impedance matching structure [e.g. balun]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/237—A parallel resonance being added in series in the input circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/255—Amplifier input adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/429—Two or more amplifiers or one amplifier with filters for different frequency bands are coupled in parallel at the input or output

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Amplifiers (AREA)
  • Microwave Amplifiers (AREA)

Description

1364161 九、發明說明： 【發明所屬之技術領域】 本發明係有關於移動體通訊、衛星通訊用等之微波、 毫米波段之通訊機所使用之高頻功率放大器。 . 【先前技術】 在使用多載波訊號或近年之CDMA方式等調變波訊號 φ 的微波通訊系統中，係必須儘可能減少因高頻功率放大器 之非線性所產生之失真的影響。相對於此，已知若在輪入 側設置對於2次高諧波形成為開放負載或高阻抗負載的共 振電路，即可將高頻功率放大器予以高效率化（參照例: 專利文獻1)。此外，在移動體通訊、衛星通訊用之高輸 出功率放大器中，丨了獲得大功率M吏用一種以電性並聯 連接複數個電晶體單元（transist〇r cen)而加大間極 寬度的多指型（Multi-Finger)電晶體。 • (專利文獻n日本專利特開2〇〇2-164753號公報 【發明内容】 (發明所欲解決的課題） 第19圖、第20圖係、顯示在輸人側設有共振電路之高 頻功率放大器之參考例之電路圖。以電性並聯連接複數個 電晶體單元1卜在其閘極電極經由調整用線路16及接合 線（b〇nding Wire) 12而連接有輸入側整合電路13，在 其沒極電極經由接合線14而連接有輸出側整合電路& 2118-9762-PF 5 13641.61 接著，在第19圖、第2〇圖的雷 _幻電路係在輸入側整合電 的前段設有共振電路17。 0 _ 弟19圖的共振電路17係相對於 2次咼諸波形成為開放負載 、 貝戰第20圖的共振電路17俜 對於2次高諧波形成為高阻抗負載。 係相 在第1 9圖的電路中係骑„ ?係^間極電極合成而連接於輸入 側整合電路1 3之後連接丘捩雷牧，， …” *以 電路1?，因此當由各電晶體 早π 11觀看輸入側整合電路13 ^ __ , τ在單凡間產生相位 差。因此，無法將由各電晶體 电日體早7L 11之閘極電極所觀看 到的2次高諧波負載同等地 取马同阻抗負載。此外，本 使用多指型電晶體時，電晶體 田 小。因此，在第20圖的電路中變付非吊 使末自共振電路17的反射波衰減，因此 諧波負載控制為開放負載。因此 圖、將2-人间 Φ . . 在第19圖、第20圖的 電路中，會有失真特性差的問題。 本發明係為了解決如上所述之1 %二 在奸-括〜* ^之課通而研創者，其目的 在獲仔-種可改善失真特性的高頻功率放大器。 (用以解決課題的手段） 以 其 分 本發明之高頻功率放大器係包括. 雷，ht卄_^ + 括.夕指型電晶體 電！·生並聯連接有複數個電晶體單元；輸入側整 連接於複數個電晶體單元的閘極 別诖妹认々& 伐，以及共振電路，分 接於各電晶體單元的閉極電極與 間，共振電路係以電晶體之動作頻 」整口電路之 或在以2次高谐波的頻率為中心的譜波的頻率 於？ a 士吩丄 的既疋乾圍内共振，相對 南4波形成為高阻抗負載或開放負載。本發明之其 2118-9762-Pf 6 1364161 他特徵係如以下所示。 (發明效果） 藉由本發明，可改善失真特性。 【實施方式】 . (實施形態1) 第1圖係顯示本發明之實施形態i之高頻功率放大器 _ 之上視圖，第2圖係其電路圖。 藉由以電性並聯連接複數個電晶體單元u來形成多 指型電晶體。複數個電晶體單元u的開極電極係經由接 合線12而連接於輸入側整合電路13。複數個電晶體單元 11的沒極電極係經由接合線14而連接於輸出側整合電路 15。複數個電晶體單元u的源極電極係予以接地。接合 線12、14係作為電感器（induct〇r)而發揮功能。。 在各電晶體單元11的閘極電極與輸人側整合電路Μ 春之間，分別連接有調整用線路16及共振電路17。亦即， 在各電晶體單元U的閘極電極分別附加有共振電路^之 後，再藉由接合線12而連接於輸人側整合電路13而予以 共振電路17係形成在與電晶體相同的晶片i 8上，且 有彼此並聯連接的接合線19及電容器2卜接’ |、1364161 IX. Description of the Invention: [Technical Field] The present invention relates to a high-frequency power amplifier used in a microwave or millimeter-band communication device for mobile communication, satellite communication, and the like. [Prior Art] In a microwave communication system using a multi-carrier signal or a modulated CDMA signal such as the CDMA system in recent years, it is necessary to minimize the influence of distortion caused by the nonlinearity of the high-frequency power amplifier. On the other hand, it is known that a high-frequency power amplifier can be made more efficient by providing a resonant circuit that is formed into an open load or a high-impedance load for the second-order harmonics on the wheel-in side (see Patent Document 1). In addition, in the high-output power amplifier for mobile communication and satellite communication, a high-power M is obtained, and a multi-finger that increases the inter-pole width by electrically connecting a plurality of transistor units (transist〇 cen) in parallel is used. Type (Multi-Finger) transistor. (Patent Document) Japanese Patent Laid-Open Publication No. Hei 2-2-164753. SUMMARY OF THE INVENTION PROBLEMS TO BE SOLVED BY THE INVENTION FIG. 19 and FIG. 20 show a high frequency in which a resonance circuit is provided on the input side. A circuit diagram of a reference example of a power amplifier. The plurality of transistor units 1 are electrically connected in parallel, and the input side integration circuit 13 is connected to the gate electrode via the adjustment line 16 and the bonding wire 12 The electrodeless electrode is connected to the output side integrated circuit via the bonding wire 14 & 2118-9762-PF 5 13641.61. Next, the lightning-charging circuit of the 19th and 2nd drawings is provided in the front stage of the integrated side of the input side. The resonant circuit 17 is a high-impedance load for the second harmonic of the resonant circuit 17 that is an open load with respect to the two waveforms. In the circuit of Fig. 19, the circuit is coupled to the interelectrode electrode and connected to the input side integrated circuit 1 3 and then connected to the Qiu Ruimu, ..." * by circuit 1?, therefore, when each transistor is early π 11 watch the input side integrated circuit 13 ^ __, τ in the single-production Therefore, it is impossible to equally obtain the same harmonic load of the second harmonic load observed by the gate electrode of each transistor electric solar body 7L 11 . In addition, when the multi-finger type transistor is used, The transistor field is small. Therefore, in the circuit of Fig. 20, the reflected wave of the non-suspended self-resonant circuit 17 is attenuated, so that the harmonic load is controlled to be an open load. Therefore, the figure will be 2-personal Φ. In the circuits of Fig. 19 and Fig. 20, there is a problem that the distortion characteristics are poor. The present invention is made in order to solve the problem of 1% of the above-mentioned two in the case of the traits, and the purpose of the invention is to obtain A high-frequency power amplifier capable of improving distortion characteristics. (Means for solving the problem) The high-frequency power amplifier system according to the present invention includes: Ray, ht卄_^ + Included. Xi-type transistor transistor electricity! A plurality of transistor units are connected in parallel; the input side is connected to the gates of the plurality of transistor units, and the gates of the plurality of transistor units are separated and the resonant circuit is tapped between the closed electrodes of the respective transistor units, and the resonance The circuit is based on the operating frequency of the transistor. Or the frequency of the spectral wave centered on the frequency of the second harmonic is resonated within the dry circumference of the ? a commander, and becomes a high impedance load or an open load with respect to the south 4 waveform. 2118- of the present invention 9762-Pf 6 1364161 The following features are shown. (Effect of the Invention) According to the present invention, the distortion characteristics can be improved. [Embodiment 1] FIG. 1 shows a high frequency of the embodiment i of the present invention. Power amplifier _ top view, Fig. 2 is a circuit diagram thereof. A multi-finger type transistor is formed by electrically connecting a plurality of transistor units u in parallel. The open electrodes of the plurality of transistor units u are connected to the input side integration circuit 13 via the bonding wires 12. The electrodeless electrodes of the plurality of transistor units 11 are connected to the output side integration circuit 15 via the bonding wires 14. The source electrodes of the plurality of transistor units u are grounded. The bonding wires 12 and 14 function as inductors (inducts). . An adjustment line 16 and a resonance circuit 17 are connected between the gate electrode of each of the transistor units 11 and the input side integrated circuit Μ春. That is, after the resonant circuit is added to the gate electrodes of the respective transistor units U, the connection circuit 12 is connected to the input side integration circuit 13 to form the resonance circuit 17 on the same wafer as the transistor. On the i 8 , and the bonding wires 19 and the capacitors 2 connected in parallel with each other are connected to ' |,

係作為電感器而發揮功能。共振電路17係以電晶體之 作頻率之2次向諧波的頻率或在以2次高諧波之 心的既定範圍内共振，相對於2次高㈣形成為高阻^ 2118-9762-PF 7 1364161 載。藉此，可將由各電晶體 的2次南諸波負載同等地形 失真特性。 早元11之閘極電極所觀看到 成為南阻抗負載，因此可改善 (實施形態2) 第3圖係顯示本發明$音。 不發月之貫施形態2之高頻功率放大器 之上視圖。電路圖係與實施形態丨相同。 與實施形態！不同的是，以共振電路”之電“而 言’係錢形成在與電晶體相同的W 18上的螺旋電感 :’來替代接合線19。其他構成係與實施形態！的構 成相同。 在實施形態！中，當動作頻率較高時，藉由因接合線 19之纜線長度的不-致所造成之電感的變動，使共振電路 7的共振頻率變動較A。相對於此，在本實施形態中係 可抑制螺旋電感器21《電感的不均，且可抑制共振電路 17之共振頻率的變動。It functions as an inductor. The resonance circuit 17 resonates at the frequency of the second harmonic of the transistor or within a predetermined range of the center of the second harmonic, and forms a high resistance with respect to the second high (four) ^ 2118-9762-PF 7 1364161. Thereby, the topographical distortion characteristics of the secondary waves of each of the transistors can be made equal. The gate electrode of the early element 11 is seen to be a south impedance load, so that it can be improved (Embodiment 2) Fig. 3 shows the $ sound of the present invention. The top view of the high frequency power amplifier of Form 2 is not applied. The circuit diagram is the same as the implementation. And the implementation! The difference is that the "electricity" of the resonant circuit is used to form a spiral inductance on the same W 18 as the transistor: ' instead of the bonding wire 19. Other components and implementations! The composition is the same. In the implementation form! In the case where the operating frequency is high, the resonance frequency of the resonant circuit 7 fluctuates by A due to the variation in the inductance caused by the length of the cable length of the bonding wire 19. On the other hand, in the present embodiment, the inductance of the spiral inductor 21 can be suppressed, and the fluctuation of the resonance frequency of the resonance circuit 17 can be suppressed.

(實施形態3) 第4圖係顯示本發明之實施形態3之高頻功率放大器 之上視圖’第5圖係、其電路圖。接合線19的—端係連: 於輸入側整合電路13，其他構成則與實施形態"目同。藉 此可加長接合線19,因此在必須加大電感時極為有效。曰 (實施形態4 ) 第6圖係顯示本發明之實施形態4之高頻功率放大器 之上視圖，第7圖係其電路圖。MIM電容器2〇係形成在态 別於電晶體之其他晶片22上。MIM電容器2〇的— J Μ係經 2118-9762-PF 8 13641.61 由接合線12而連接於輸入側整合電路13，mIM電容器2〇 的另一端係經由接合線23而連接於調整用線路16。其他 構成係與實施形態1相同。當形成有電晶體之晶片18的 成本較高時，藉由在其他廉價的晶片22上形成Mim電容 器，可降低成本。 (實施形態5) 第8圖係顯示本發明之實施形態5之高頻功率放大器 之上視圖，第9圖係其電路圖。共振電路丨7之内部構^ 以外係與實施形態1相同。 共振電路17係具有電氣長度調整用線路24與開放端 短截線（stub) 25。開放端短截線25的一端係連接於電 氣長度調整用線路24,開放端短截線25的另— ' 4 缅係呈開 放狀態。電氣長度調整用線路24係經由接人蠄]9 坎β琢i Z而連接 於輸入側整合電路13 » 藉由調整開放端短截線25與電氣長度調整用線路Μ 的長度’可將由各電晶體單元！ i的閘極電極所觀看到的2 次高諧波負載調整為所希望的值。例如相對於動作頻率訊 號的波長λ，當將開放端短截線25的長度設為又 電氣長度調整用線路24的長度設為λ/8睹， ' /、振電路 17係相對於2次高諧波形成為開放負載，因此可 ,.., 人吾夭具 (實施形態6) 第1 0圖係顯示本發明之實施形態6 ι同頻功率放大 器之上視圖’第Π圖係其電路圖。共振 电路1 7之内部構 2118-97 62-PF 9 13641-61 成以外係與實施形態〗相同。 共振電路17係具有電氣長度調整用線路24與短路端 ^截線26。短路端短截線26的—端係連接於電氣長 正用線路24，短路端短截線26的另一端係經由電容：打 而連接於與背面接地相連接的通孔28而呈短路狀態1 乳長度調整用線路24係經由接合線12而連接 合電路13。(Embodiment 3) Fig. 4 is a circuit diagram showing a top view of a high frequency power amplifier according to a third embodiment of the present invention. The end of the bonding wire 19 is connected to the input side integration circuit 13, and the other configuration is the same as the embodiment. Thereby, the bonding wire 19 can be lengthened, so that it is extremely effective when it is necessary to increase the inductance. (Embodiment 4) Fig. 6 is a top view showing a high frequency power amplifier according to a fourth embodiment of the present invention, and Fig. 7 is a circuit diagram thereof. The MIM capacitor 2 is formed on the other wafer 22 in the state of the transistor. The MIM capacitor is connected to the input side integration circuit 13 by the bonding wire 12, and the other end of the mIM capacitor 2A is connected to the adjustment line 16 via the bonding wire 23. The other configuration is the same as that of the first embodiment. When the cost of the wafer 18 in which the transistor is formed is high, the cost can be reduced by forming the Mim capacitor on the other inexpensive wafer 22. (Fifth Embodiment) Fig. 8 is a top view showing a high frequency power amplifier according to a fifth embodiment of the present invention, and Fig. 9 is a circuit diagram thereof. The internal structure of the resonant circuit unit 7 is the same as that of the first embodiment. The resonance circuit 17 has an electric length adjustment line 24 and an open end stub 25. One end of the open end stub 25 is connected to the electric length adjustment line 24, and the other end of the open end stub 25 is opened. The electric length adjustment line 24 is connected to the input side integrated circuit 13 via the connection 9]9 琢β琢i Z » by adjusting the length of the open end stub 25 and the electrical length adjustment line '' Crystal unit! The 2nd harmonic load seen by the gate electrode of i is adjusted to the desired value. For example, when the length of the open end stub 25 is set to λ/8 相对 with respect to the wavelength λ of the operating frequency signal, the length of the electric length adjusting line 24 is λ/8 睹, and the vibration circuit 17 is relatively high twice. The harmonics are formed as an open load, so that the present invention can be used to display the circuit diagram of the above embodiment of the present invention. The internal structure 2118-97 62-PF 9 13641-61 of the resonance circuit 17 is the same as that of the embodiment. The resonance circuit 17 has an electric length adjustment line 24 and a short-circuit end cut line 26. The end of the short-circuit stub 26 is connected to the electric long-term line 24, and the other end of the short-circuit stub 26 is connected to the through-hole 28 connected to the back ground via a capacitor to be short-circuited. The milk length adjustment line 24 is connected to the merging circuit 13 via the bonding wire 12.

藉由調整短路端短截線26與電氣長度調整用線路W 的長度，可將^電晶體單元n的㈣電極所觀看到的2 次尚諧波負載調整為所希望的值。例如相對於動作頻率訊 遽的波長λ，當將短路端短截線26的長度設為乂/4, 電氣長度調整用線路24的長度設為時，共振電路 係相對於2次高諧波形成為開放負載，因此可改盖失直 特性。 D天具 (實施形態7) 第12圖係顯示本發明之實施形態7之高頻功率放大 器之電路圖。各共振電路17a至m之共振頻率係藉由改 變電感或電容’而分為2個以上不同的頻 此 電路17a、17c、17e的並据镅f & f , 八振 幻”搌頻率為fa，共振電路nb、17d、 1 7f的’、振頻率為fb。其他構成係與實施形態1的構成相 同0 第13圖係顯示相對於規格化頻率之㈣的變化圖。 所謂規格化頻率係指經規格化的動作頻率，所謂m抑 功率附加效率。動作頻帶係規格化鮮0.91U。針^By adjusting the length of the short-circuit stub 26 and the length-measurement line W, the secondary harmonic load observed by the (four) electrode of the transistor unit n can be adjusted to a desired value. For example, when the length of the short-circuit stub 26 is 乂/4 with respect to the wavelength λ of the operating frequency, and the length of the electrical length adjusting line 24 is set, the resonant circuit is formed with respect to the second harmonic. In order to open the load, the straight-out characteristics can be changed. D-day (Embodiment 7) Fig. 12 is a circuit diagram showing a high-frequency power amplifier according to Embodiment 7 of the present invention. The resonant frequency of each of the resonant circuits 17a to m is divided into two or more different frequencies 17a, 17c, and 17e by changing the inductance or the capacitance ', and the frequency is fa f & f , and the frequency of the eight vibrations is fa The resonance frequency of the resonance circuits nb, 17d, and 17f is fb. The other configuration is the same as the configuration of the first embodiment. FIG. 13 is a diagram showing the variation of the normalized frequency (four). The normalized operating frequency, the so-called m suppresses the power added efficiency. The operating band is standardized to 0.91U.

2118-9762-PF 10 丄刪L61 2 =頻率fa的共振電路裝載於電晶體的情形 '僅將 ' / fb的共振電路裝餘電晶體的情形、及以單元 12圖的雷二共振頻率"的共振電路現在的情形（第 U圖的電路）等3種情形進行計算。 ^設僅有共振電路17a至m的共振頻率對pAE造 若使共振…、作的共振電路混在，與使2118-9762-PF 10 丄 Delete L61 2 = The case where the resonant circuit of the frequency fa is mounted on the transistor 'only the case where the resonance circuit of the /fb is charged, and the Rayleigh resonance frequency of the unit 12 diagram" The current situation of the resonance circuit (the circuit of the U-picture) is calculated in three cases. It is assumed that only the resonance frequency of the resonance circuits 17a to m is used to make the resonance of the pAE, and the resonance circuit is mixed with

、振頻率fa或fb的共振電路的情形相比較，PAECompared with the case of the resonant circuit of the vibration frequency fa or fb, PAE

間值。因此，若適當選擇2個共振頻率，可以較寬 的頻帶改善失真特性。 此外，各共振f路17之共振頻率之種類數量係以 數個電晶體單元11的數量的約數為宜。藉此可實現電 體整體的均一動作 此外，第14圖至第16圖係顯示共振頻率之設定之例 圖。在此，將電晶體之動作頻率的下限設為fi、上限設為 2在第14圖中，係將共振頻率f a、f b分別設定為2次 #高譜波的下限2fl附近的頻率、2次高譜波的上限犯附 近的頻率。在帛15冑中，係將共振頻# fa、fb分別設定 為（3fl+f2) /2附近的頻率、（fl+3f2) /2附近的 頻率。在第16圖中，係將共振頻率fa、fb、fc分別設定 為2f 1附近的頻率、f丨+ f2附近的頻率、2f2附近的頻率。 在考慮共振電路的q值的情形下，只要選擇可獲得更為平 坦之失真特性的組合即可。 (實施形態8 ) 第1 7圖係顯示本發明之實施形態8之高頻功率放大Inter-value. Therefore, if two resonance frequencies are appropriately selected, the distortion characteristics can be improved in a wide frequency band. Further, the number of kinds of resonance frequencies of the respective resonance paths 17 is preferably a number of the number of the plurality of transistor units 11. Thereby, the uniform operation of the entire body can be realized. Further, Fig. 14 to Fig. 16 show an example of the setting of the resonance frequency. Here, the lower limit of the operating frequency of the transistor is fi and the upper limit is set to 2. In the fourteenth figure, the resonance frequencies fa and fb are respectively set to the frequency near the lower limit 2fl of the second high frequency wave, twice. The upper limit of the high-spectrum wave is near the frequency. In 帛15胄, the resonance frequencies # fa and fb are set to frequencies near (3fl+f2) /2 and frequencies near (fl+3f2) /2. In Fig. 16, the resonance frequencies fa, fb, and fc are respectively set to a frequency near 2f1, a frequency near f丨+f2, and a frequency near 2f2. In the case of considering the q value of the resonance circuit, it is only necessary to select a combination which can obtain a more flat distortion characteristic. (Embodiment 8) Fig. 17 shows a high frequency power amplification of Embodiment 8 of the present invention.

2118-9762-PF 器之電路圖。左女 振電路17連財具有與共 電路2%: a不同之共振頻率ib的第2共振 八他構成係與實施形態丨 ' 單元單位將失真特性寬頻化。 成相.错此可以 次以振電路29亦可以電晶體之動作頻率之3 中心之既二r二頻率或在以3次以上之高譜波的頻率為 巳圍内共振，相對於3次 高阻抗負載或開放負載。 上的㈣波形成為 (實施形態9) 写之:：圖圖!：示本發明之實施形19之高頻功率放大 相同。、振電路17的内部構成以外係與實施形態i 且古共振電路17係除了接合線19與_電容器2〇以外， 具有一極體30與DC供雷嫂；qi , 19.並聯連接’與MIM電聯=體3°係 電谷益20串聯連接。dc供電端子31 :連接於.二極體3。與MIM電容器2。的連接 = 7De供電端子31施力W可由外部調整共振電 路^的電容器的電容，而調整共振頻率。其中，亦可藉 由调整接合線19的長度來改變電感，以調整共振頻率。 糟此可調整元件製作後的共振頻率，因此比利用電路元件 或圖案來製作電容器或電感器更為有利。 【圖式簡單說明】 第1圖係顯示本發明之實祐犯 頁知形態1之高頻功率放大器 2118-9762-PF 12 13641-61 之上視圖。 第2圖係顯示本發明之實施形態1之高頻功率放大器 之電路圖。Circuit diagram of the 2118-9762-PF device. The left female vibration circuit 17 has a common circuit 2%: a second resonance of the resonance frequency ib differently. The eight-component system and the embodiment 丨 ' The unit unit widens the distortion characteristics. In this case, the oscillation circuit 29 can also resonate within the range of the center of the operating frequency of the transistor, or the frequency of the high-spectrum wave of three or more times, relative to the third time. Impedance load or open load. The above (four) waveform is (Embodiment 9) written: Fig.: The high frequency power amplification of the embodiment 19 of the present invention is the same. The internal structure of the oscillating circuit 17 is different from that of the embodiment i, and the paleo-resonant circuit 17 has a pole body 30 and a DC supply thunder in addition to the bonding wire 19 and the _capacitor 2 嫂; qi, 19. is connected in parallel with the MIM Union = body 3 ° series electric valley benefit 20 series connection. The dc power supply terminal 31 is connected to the diode 3. With MIM capacitor 2. Connection = 7De power supply terminal 31 applies force W The capacitance of the capacitor of the resonance circuit can be externally adjusted to adjust the resonance frequency. Here, the inductance can also be changed by adjusting the length of the bonding wire 19 to adjust the resonance frequency. This makes it possible to adjust the resonant frequency of the component after fabrication, and is therefore more advantageous than using a circuit component or pattern to make a capacitor or inductor. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a top view of a high frequency power amplifier 2118-9762-PF 12 13641-61 of the present invention. Fig. 2 is a circuit diagram showing a high frequency power amplifier according to the first embodiment of the present invention.

第3圖係顯示本發明之實施形態2之高頻功率放大器 之上視圖。 D 第4圖係顯示本發明之實施形態3之高頻功率放大器 之上視圖。Fig. 3 is a top view showing a high frequency power amplifier according to a second embodiment of the present invention. D Fig. 4 is a top view showing the high frequency power amplifier of the third embodiment of the present invention.

第5圖係顯示本發明之實施形態3之高頻功率放大器 之電路圖。 第6圖係顯示本發明之實施形態4之高頻功率放大器 之上視圖。 第7圖係g自；~ ^不本發明之實施形態4之高頻功率放大器 之電路圖。 第8圖係駿+ # .肩不本發明之實施形態5之高頻功率放大器 之上視圖。 第9圖·^车§§ —丄 ’、顯不本發明之實施形態5之高頻功率放大器 之電路圖。 第1 〇圖係顯 器之上視圖。 第11圖係顯 器之電路圖。 第12圖係顯 器之電路圖。 第13圖係顯 示本發明之實施形態6之高頻功率放大 不本發明之實施形態6之高頻功率放大 不本發明之實施形態7之高頻功率放大 不相對於規格化頻率之pAE的變化圖。Fig. 5 is a circuit diagram showing a high frequency power amplifier according to a third embodiment of the present invention. Fig. 6 is a top view showing the high frequency power amplifier of the fourth embodiment of the present invention. Fig. 7 is a circuit diagram of a high frequency power amplifier of Embodiment 4 of the present invention. Fig. 8 is a top view of the high frequency power amplifier of the fifth embodiment of the present invention. Fig. 9 is a circuit diagram of a high frequency power amplifier according to a fifth embodiment of the present invention. The first view is the top view of the display. Figure 11 shows the circuit diagram of the display. Figure 12 shows the circuit diagram of the display. Figure 13 is a diagram showing the high-frequency power amplification according to the sixth embodiment of the present invention. The high-frequency power amplification according to the sixth embodiment of the present invention is not the change of the high-frequency power amplification of the seventh embodiment of the present invention with respect to the normalized frequency. Figure.

2118-9762-PF 13 第 ®係顯示共振頻率之設定之例圖。 第15圖係顯示共振頻率之設定之例圖。 第16圖係顯示共振頻率之設定之例圖。 第17圖係顯示本發明之實施形態8之高頻功率放大 器之電路圖。 第18圖係顯示本發明之實施形態9之高頻功率放大 器之電路圖。 。。第 圖係顯不將共振電路設在輸人側之高頻功率放 大器之參考例之電路圖。 士 - n ^係' 顯不將共振電路設在輸人側之高頻功率放 太盗之參考例之電路圖。 【主要元件符號說明】 11電晶體單元 12接合線 13 輸入側整合電路 14 ' 1 9 ' 2 3接合線 15 輸出側整合電路 16 調整用線路 17、17a至Ι7ί共振電路 18 ' 22晶片 20 ΜΙΜ電容器（電容器） 21螺旋電感器（電感器） 24 電氣長度調整用線路2118-9762-PF 13 Section ® shows an example of the setting of the resonance frequency. Fig. 15 is a diagram showing an example of the setting of the resonance frequency. Fig. 16 is a diagram showing an example of the setting of the resonance frequency. Fig. 17 is a circuit diagram showing a high frequency power amplifier of an eighth embodiment of the present invention. Figure 18 is a circuit diagram showing a high-frequency power amplifier according to a ninth embodiment of the present invention. . . The figure shows a circuit diagram of a reference example in which the resonance circuit is not provided on the input side of the high frequency power amplifier.士 - n ^系' A circuit diagram showing a reference example of a high-frequency power amplifier placed on the input side of the thief. [Main component symbol description] 11 Transistor unit 12 bonding wire 13 Input side integration circuit 14 '1 9 ' 2 3 bonding wire 15 Output side integration circuit 16 Adjustment line 17, 17a to ί 7ί resonance circuit 18 ' 22 wafer 20 tantalum capacitor (Capacitor) 21 Spiral Inductor (Inductor) 24 Electrical Length Adjustment Line

2118-9762-PF 14 13641.61 25 開放端短截線 26 短路端短截線 27 電容器 28 通孔 29 第2共振電路 30 二極體 31 DC供電端子 2118-9762-PF 152118-9762-PF 14 13641.61 25 Open end stub 26 Short end stub 27 Capacitor 28 Through hole 29 2nd resonant circuit 30 Diode 31 DC power supply terminal 2118-9762-PF 15

Claims (1)

1364161 第 097122834 號 1〇1年1月10日陣替換頁 〜年/月“日修正本 十、申請專利範園： 1. 一種向頻功率放大器，其特徵在於包括： 元；多指型電晶體，以電性並聯連接有複數個電晶體單 輸侧整。電路，其連接於前述複數個電晶體單元的 閘極電極；以及 叩 、刀別連接於各電晶體單元的閘極電極與 述輸入侧整合電路之間， ’' 月|J述共振電路係以前述電晶體之動作頻率之2次高抵 波的頻率或在以2次高譜波的頻率為中心的既定範圍内: 振’相對於2次高證波形成為高阻抗負載或開放負載，、 其中’前述共振電路係具有： 電氣長度調整用線路；以及 開放端短截線’―端連接於前述電氣長度調整 另一端予以開放。 2. -種高頻功率放大器，其特徵在於包括： 多指型電晶體，以電性並聯連接有複數個電晶體單 前 路 元 輪入側整5電路，其連接於前述複數個電晶體單元 閘極電極；以及 共振電路，分別連接於各電晶體單元的閘極電極與前 述輸入側整合電路之間， 』 前述共振電路係以前述電晶體之動作頻率之2次高諧 波的頻率或在以2次高諧波的頻率為中心的既定範圍= 2118-9762-PF1 16 1364161 ' 第 097122834 號 101年1月10日修正替換頁 振’相對於2次高諧波形成為高阻抗負載或開放負載， 其中’前述共振電路係具有： 電氣長度調整用線路；以及 路端短截線’ 一端連接於前述電氣長度調整用線 路’另一端予以短路。 3# —種高頻功率放大器，其特徵在於包括： …夕&型電晶體’以電性並聯連接有複數個電晶體單 1侧整σ電路，其連接於前述複數個電晶體單元的 閘極電極；以及 、、電路刀別連接於各電晶體單元的閘極電極與前 述輸入側整合電路之間， >、 别述共振電路係以前述電晶體之動作頻率之2 •欠官μ 波的頻率或在以2次高諸波的頻率為中心的既定範圍= 振目對於2次高諧波形成為高阻抗負載或開放負載、 其中，各共振電路的共振頻率係分為2個以上不同的 八中，各共振電路的共振頻率的種 個電晶體單元數量的約數 4·-種高頻功率放大器’其特徵在於包括·· …多指型電晶體’以電性並聯連接有複數個電晶 •7〇 9 ' 輸入側整合電路 閘極電極；以及 ’其連接於前述複數個電晶體單元的 2118-9762-pfi 17 丄屬61 • 第 097122834 號 101年1月10曰修正替換頁 八振電路刀別連接於各電晶體單元的閘極電極與前 述輸入侧整合電路之間， 前述共振電路係以前述電晶體之動作頻率之2次高諧 的頻率或在以2次南謹波的頻率為中心的既定範圍内共 振，相對於2次高諧波形成為高阻抗負載或開放負載， 其中，各共振電路的共振頻率係分為2個以上不同的 頻率， 其中备將則述電晶體的動作頻率的下限設為fl、上 限設為f2時’各共振電路的共振頻率係分為⑶卜⑴ /2附近的頻率、及（fl + 3f2) /2附近的頻率。 5.—種高頻功率放大器，其特徵在於包括： 户才日電s日體，以電性並聯連接有複數個電晶體單 元； 輸入側整0電路，其連接於前述複數個電晶體單元的 閘極電極；以及 共振電路，分別連接於各電晶體單元的閘極電極與前 述輸入侧整合電路之間， 前述共振電路係以前述電晶體之動作頻率之2次高諧 波的頻率或在以2次高諧波的頻率為中心的既定範圍内共 振’相對於2次向it波形成為高阻抗負載或開放負載， 中各八振電路的共振頻率係分為2個以上不同的 頻率， 其中，當將前述電晶體的動作頻率的下限設為η、上 限設為f2時’各共振電路的共振頻率係分為m附近的 2118-9762-PF1 18 Γ304101 第 097122834 號 川】年1月10日修正替換頁 頻率、fl+f2附近的頻率、及犯附近的頻率。 6. 一種高頻功率放大器，其特徵在於包括： 多指型電晶體，以雷一 _ 窀性並聯連接有複數個電晶體單 元； 輸入側整合電路，其遠旅 再連接於别述複數個電晶體單元的 間極電極； 共振電路’分別連接於各 述耠入々 早兀的開極電極與前 迷输入側整合電路之間；以及 第2共振電路，分別串聯連接各共振電路，且 前述共振電路不同的共振頻率， ，、有” …其中剛述共振電路係以前述電晶體之動作頻率之2 次兩諧波的頻率或在以2次高 Ffl rin U k . & /反的頻率為中心的既定範 圍内共振，相對於2次高諧波带$ 載， 及形成為向阻抗負載或開放負 其中，前述第2共振電路 之3 -欠以上^^ 峪係以别述電晶體之動作頻率 义d-人以上之间諧波的頻率 Φ .. 从 在乂 3二人以上之高諧波的頻 率為中心的既定範圍内共振㈣ 成為m w 邳對於3次以上之高諧波形 成*馮间阻柷負載或開放負載。 7. 如申請專利範圍第丨至 率放大器，其中，前述共振電路項所述的高頻功 及電容器。 係具有並聯連接的電感器 8. 如申請專利範圍第7項 中，前述共振電路的電感器係頻功率放大器，其 9. 如申請專利範圍第7項所述的高頻功率放大器，其 2118-9762-PF1 19 丄juhj：u丄 - 第 097122834 號 101年1月10曰修正替換頁 〗。V由振電路的電感器係螺旋電感器。 丈中，㈣圍第7項所述的高㈣率放大器， 晶體相同的晶片±。 係形成在與則述電 11.如申請專利範圍第 其中，前述共振電路的電容 的晶片上。 7項所述的高頻功率放大器， 器係形成在有別於前述電晶體 其中 12.如申請專利範圍第 ，前述共振電路的電容 7項所述的高頻功率放大器 器係可由外部調整電容。 2118-9762-PF1 201364161 No. 097122834 January 1, 2010 replacement page ~ year / month "Day revision ten, application for patent garden: 1. A frequency power amplifier, characterized by: yuan: multi-finger transistor a plurality of transistors are connected in parallel with each other, and a circuit is connected to the gate electrodes of the plurality of transistor units; and a gate electrode connected to each of the transistor units and the input Between the side integration circuits, the ''month'' resonance circuit is in the range of the second high-frequency wave of the operating frequency of the above-mentioned transistor or within a predetermined range centered on the frequency of the second-order high-spectrum wave: The high-voltage waveform is a high-impedance load or an open load, and the 'the aforementioned resonant circuit has: an electric length adjusting line; and an open-end stub'-end is connected to the other end of the electrical length adjustment to be opened. - a high-frequency power amplifier, comprising: a multi-finger type transistor, electrically connected in parallel with a plurality of transistors, a single anterior element wheel into the side of the entire 5 circuit, which is connected to the plurality of a crystal unit gate electrode; and a resonance circuit respectively connected between the gate electrode of each transistor unit and the input side integration circuit, wherein the resonance circuit is a frequency of the second harmonic of the operating frequency of the transistor Or in the established range centered on the frequency of the second harmonic = 2118-9762-PF1 16 1364161 'No. 097122834 No. 10, 101, revised replacement page vibration, formed as a high-impedance load with respect to the second harmonic Or an open load, wherein the 'the aforementioned resonant circuit has: an electric length adjusting line; and a short end of the road end' is connected to the other end of the electric length adjusting line' to be short-circuited. 3# - a high-frequency power amplifier, The method comprises the following steps: ...the eve & type transistor is electrically connected in parallel with a plurality of transistor single 1 side sigma circuits connected to the gate electrodes of the plurality of transistor units; and, the circuit knife is connected Between the gate electrode of each transistor unit and the input side integrated circuit, >, the other resonant circuit is the operating frequency of the transistor The frequency of the unused μ wave or the predetermined range centered on the frequency of the two high waves = the vibration is formed into a high-impedance load or an open load for the second harmonic, wherein the resonance frequency of each resonant circuit is divided into In more than two different eight, the number of various types of transistor units of the resonant frequency of each resonant circuit is about four kinds of high-frequency power amplifiers, which are characterized by including ... multi-finger type transistors are electrically connected in parallel There are a plurality of electro-crystals; 7〇9' input-side integrated circuit gate electrode; and 'the 2118-9762-pfi 17 丄 61 61 connected to the plurality of transistor units. ・ 097122834 No. 10, 101 The replacement page eight-oscillation circuit is connected between the gate electrode of each transistor unit and the input side integrated circuit, and the resonant circuit is at the second harmonic frequency of the operating frequency of the transistor or at 2 times south. The frequency of the wave is centered within a predetermined range of resonance, and is formed as a high-impedance load or an open load with respect to the second-order high harmonic, wherein the resonant frequency of each resonant circuit is divided into two or more different frequencies. In the case where the lower limit of the operating frequency of the transistor is f1 and the upper limit is f2, the resonant frequency of each resonant circuit is divided into (3) the frequency near (1)/2, and the vicinity of (fl + 3f2) /2. Frequency of. 5. A high frequency power amplifier, comprising: a household electricity s day body, electrically connected in parallel with a plurality of transistor units; an input side integral 0 circuit connected to the gate of the plurality of transistor units a pole electrode; and a resonant circuit connected between the gate electrode of each of the transistor units and the input side integrated circuit, wherein the resonant circuit is at a frequency of the second harmonic of the operating frequency of the transistor or at 2 The frequency of the next-high harmonic is centered within the predetermined range. The resonance 'becomes a high-impedance load or an open load with respect to the secondary-to-it waveform, and the resonant frequency of each of the eight-oscillation circuits is divided into two or more different frequencies, wherein When the lower limit of the operating frequency of the transistor is η and the upper limit is f2, the resonance frequency of each resonant circuit is divided into 2118-9762-PF1 in the vicinity of m. 18 Γ304101 No. 097122834] Modified on January 10 The page frequency, the frequency near fl+f2, and the frequency of the nearby. 6. A high frequency power amplifier, comprising: a multi-finger type transistor, wherein a plurality of transistor units are connected in parallel by lightning; and an input side integrated circuit is connected to a plurality of different circuits An interpole electrode of the crystal unit; a resonance circuit 'connected between each of the open electrodes of the first turn and the input circuit of the front input side; and a second resonant circuit connected to each of the resonant circuits in series, and the resonance The resonant frequency of the circuit is different, and there is "...the frequency of the resonant circuit is the frequency of the second harmonic of the operating frequency of the aforementioned transistor or the frequency of the second high Ffl rin U k . The resonance within a predetermined range of the center is opposite to the second harmonic band, and is formed to be negative to the impedance load or open, wherein the second resonant circuit is 3 - less than the above, and the action of the transistor is described. The frequency is Δd-the frequency of the harmonics between the human and the upper Φ.. Resonance (4) from a predetermined range centered on the frequency of the harmonics of two or more people in 乂3 becomes mw 邳 for the formation of high harmonics of more than three times * von 柷 load or open load. 7. As claimed in the patent range 丨 to rate amplifier, wherein the high frequency work and capacitor described in the above resonant circuit item has an inductor connected in parallel 8. As claimed in the scope of the seventh In the above, the inductor power frequency amplifier of the foregoing resonant circuit, 9. The high frequency power amplifier according to claim 7 of the invention, which is 2118-9762-PF1 19 丄juhj:u丄- No. 097122834 January 10曰Revised replacement page〗 V. Inductor-based spiral inductor of V-vibration circuit. In the middle, (4) high (four) rate amplifier according to item 7, the same crystal of the crystal ±. 11. The method of claim 1, wherein the high-frequency power amplifier of the seventh embodiment is formed differently from the transistor, wherein the resonant circuit is as described in the patent scope. The high frequency power amplifier described in item 7 of the capacitor can be externally adjusted. 2118-9762-PF1 20
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Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5238633B2 (en) * 2009-07-27 2013-07-17 株式会社東芝 Semiconductor device
JP5631607B2 (en) * 2009-08-21 2014-11-26 株式会社東芝 High frequency circuit having multi-chip module structure
JP5424938B2 (en) * 2010-02-25 2014-02-26 三菱電機株式会社 amplifier
WO2012160810A1 (en) * 2011-05-25 2012-11-29 三菱電機株式会社 High-efficiency active circuit
JP5361951B2 (en) * 2011-06-17 2013-12-04 株式会社東芝 Semiconductor power amplifier
US20130021104A1 (en) 2011-07-18 2013-01-24 Ubidyne, Inc. Amplifier arrangement
JP5853477B2 (en) * 2011-08-04 2016-02-09 三菱電機株式会社 Power amplifier
CN102377392A (en) * 2011-10-29 2012-03-14 常熟市董浜镇华进电器厂 High-frequency amplifier
KR101851590B1 (en) 2011-11-28 2018-04-25 삼성전자주식회사 Wireless power transmission system and multi mode resonator in wireless power transmission system
EP2928074B1 (en) * 2012-12-03 2021-03-10 Mitsubishi Electric Corporation Broadband amplifier
JP6091239B2 (en) * 2013-02-13 2017-03-08 キヤノン株式会社 Printed circuit boards, printed wiring boards and electronic devices
KR101695320B1 (en) * 2014-03-18 2017-01-13 한국전자통신연구원 Component package including matching circuit and matching method thereof
US9806159B2 (en) * 2015-10-08 2017-10-31 Macom Technology Solutions Holdings, Inc. Tuned semiconductor amplifier
JP6472540B2 (en) * 2015-12-08 2019-02-20 三菱電機株式会社 Power amplifier
US20170302245A1 (en) 2016-04-15 2017-10-19 Macom Technology Solutions Holdings, Inc. Ultra-broad bandwidth matching technique
EP3770954B1 (en) 2018-06-01 2022-07-06 Mitsubishi Electric Corporation Semiconductor device
US11158575B2 (en) 2018-06-05 2021-10-26 Macom Technology Solutions Holdings, Inc. Parasitic capacitance reduction in GaN-on-silicon devices
GB2581497A (en) * 2019-02-19 2020-08-26 Sony Semiconductor Solutions Corp A device, method and computer program product for amplification of an input signal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9126616D0 (en) * 1991-12-16 1992-02-12 Texas Instruments Ltd Improvements in or relating to amplifiers
JP3395704B2 (en) * 1999-04-06 2003-04-14 松下電器産業株式会社 Frequency converter
JP4601807B2 (en) * 2000-11-29 2010-12-22 三菱電機株式会社 High frequency power amplifier
JP4520204B2 (en) * 2004-04-14 2010-08-04 三菱電機株式会社 High frequency power amplifier
JP4756843B2 (en) * 2004-10-05 2011-08-24 パナソニック株式会社 Transistor circuit
JP2007060616A (en) * 2005-07-29 2007-03-08 Mitsubishi Electric Corp High frequency power amplifier
JP2008073931A (en) 2006-09-21 2008-04-03 Canon Inc Control method and control program of recorder, and recorder
US8076994B2 (en) * 2007-06-22 2011-12-13 Cree, Inc. RF power transistor packages with internal harmonic frequency reduction and methods of forming RF power transistor packages with internal harmonic frequency reduction

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