1362767 100年08月09日修正替換i 六、發明說明： ' *S *'* 【4明所屬之技術領域】 · 〜-化〆’' · [0001] 本發明涉及一種發光二極體。 【先前技術】 [0002] 目前’發光二極體（Light Emi tting Diode, LED)因 具光質佳（亦即光源輪出之光譜）及發光效率高等特性而 逐漸取代冷陰極螢光燈（Cold Cathode Fluorescent Lamp，CCFL)作為照明裝置之發光元件，具體可參見Michael S_ Shur 等人於文獻 Proceedings of the IEEE，Vol. 93，No. 10 (2005年 10月）中發表之“ _1362767 Correction of the replacement of i on August 09, 100. Description of the invention: '*S*'* [4] The technical field to which it belongs] ·~-〆〆'' [0001] The present invention relates to a light-emitting diode. [Prior Art] [0002] At present, 'Light Emitted Diodes (LEDs) are gradually replacing cold cathode fluorescent lamps due to their good light quality (ie, the spectrum of light source rotation) and high luminous efficiency (Cold) Cathode Fluorescent Lamp (CCFL) is used as a illuminating element for illumination devices. For details, see Michael S_Shur et al., Proceedings of the IEEE, Vol. 93, No. 10 (October 2005).
Solid-State Lighting: Toward Superior Illu-mination” 一文。 [0003] 請參見圖1，一種白光發光二極體l〇包括一個反光杯u， 一個發光二極體晶片12及用於封裝該發光二極體晶片12 之封裝體13。該反光杯11包括一容置槽11〇，及正電極 111、負電極112。該容置槽110包括用於容置該發光二 極體晶片12之底部1102，用於反射該發光二極體晶片12 發出的光線之側壁1104，及與該底部112相對的開口 1106。該正電極14與負電極15設置於該容置槽11〇之底 部1102 ’其用於與外部電源電連接《該發光二極體晶片 12設置於該正電極111上且與該正電極ill及負電極jig 打線連接。該封裝體13設置於該容置槽11〇中且其中含有 螢光粉132 ’該螢光粉132分佈於該發光二極體晶片12之 周圍》於此，該發光二極體晶片12發出的藍光可直接激 發該螢光粉132以產生黃光’從而與剩餘的藍光混光而形 096151137 表單编號A0101 第4頁/共18頁 1003287297-0 1362767 , --- * 100年08月09日修正替換頁 成白光。該螢光粉132直接分佈於該發光二極體晶片12之 % 周圍有利於混光並於一定程度上提高膂先矣#)10之出. 光均勻度，然而當該發光二極體10工作時，其溫度通常 *· 會達到70〜80度，這樣之高溫很容易使該螢光粉132之效 率降低，造成發光二極體10之出光效率及均勻度降低。 因此，有必要提供一種出光均勻度較佳的發光二極體。 【發明内容】 [0004] 以下將以實施例說明一種出光均勻度較佳的發光二極體 〇Solid-State Lighting: Toward Superior Illu-mination" [0003] Referring to Figure 1, a white light emitting diode includes a reflective cup u, a light emitting diode chip 12, and a package for the light emitting diode The package body 13 of the body wafer 12. The reflector cup 11 includes a receiving groove 11 〇, and a positive electrode 111 and a negative electrode 112. The accommodating groove 110 includes a bottom portion 1102 for accommodating the LED chip 12, a side wall 1104 for reflecting light emitted from the LED chip 12, and an opening 1106 opposite to the bottom portion 112. The positive electrode 14 and the negative electrode 15 are disposed at the bottom 1102 of the receiving groove 11' The light-emitting diode chip 12 is disposed on the positive electrode 111 and is connected to the positive electrode ill and the negative electrode jig. The package body 13 is disposed in the accommodating groove 11 且 and contains the fluorescing The phosphor powder 132' is distributed around the LED chip 12, wherein the blue light emitted by the LED chip 12 directly excites the phosphor powder 132 to generate yellow light Blu-ray mixed light and shaped 096151137 form No. A0101 Page 4 of 18 1003287297-0 1362767 , --- * Corrected the replacement page into white light on August 09, 100. The phosphor powder 132 is directly distributed around the % of the LED 12 Mixing light and increasing the degree of 膂先矣#)10. Light uniformity, however, when the light-emitting diode 10 is working, its temperature usually reaches 70~80 degrees, so the high temperature is easy to make The efficiency of the phosphor powder 132 is lowered, resulting in a decrease in light extraction efficiency and uniformity of the light-emitting diode 10. Therefore, it is necessary to provide a light-emitting diode having better light uniformity. [Abstract] [0004] The embodiment illustrates a light-emitting diode having a better light uniformity.
[0005] 一種發光二極體，其包括一個反光杯，至少一個發光二 極體晶片及複數個電極，該反光杯包括一本體及設置於 該本體上之容置槽，該複數個電極設置於該本體上且位 於該容置槽之底部，該至少一個發光二極體晶片設置於 該容置槽中並與該複數個電極電連接。該發光二極體還 包括一第一散射層及一光轉換層，該第一散射層設置於 該容置槽中且覆蓋該至少一發光二極體晶片，該第一散 射層中含有散射粒子，該光轉換層設置於該第一散射層 之遠離該至少一發光二極體晶片的一侧。 [0006] 相對於先前技術，該發光二極體包括第一散射層及光轉 換層，該第一散射層覆蓋該至少一發光二極體晶片且其 中含有散射粒子，該散射粒子可將該至少一發光二極體 晶片射出的光均勻的散射，從而使從該第一散射層出射 的激發光具有良好的均勻度，該均勻的激發光經該光轉 換層轉換後可進一步的產生均勻度較佳的白光。 【實施方式】 096151137 表單編號 A0101 第 5 頁/共 18 頁 1003287297-0 1362767 [0007] [0008] [0009] [0010] [0011] [0012] 096151137 100年08月09日修正替換頁 下面結合附圖對本發明作進一步的詳細說明。 - · · * 請參見_2>本>發明第一實施例提供之發光二極體20，其 包括一個反光杯21，一個發光二極體晶片22，一個第一 電極23，一個第二電極24，一第一散射層25及一光轉換 層2 6 〇 該反光杯21包括一本體210及設置於該本體210上之容置 槽212。該本體210包括一基底2102，一設置於該基底 2102上之環形側壁2104，該容置槽212由該基底2102與 該環形側壁2104圍成。該環形側壁2104之内表面用於反 射光線。該容置槽212為錐形，且其開口沿遠離該發光二 極體晶片22之方向逐漸變大。 該第一電極23及第二電極24設置於該基底21 02上且分別 延伸至該容置槽212之底部。該發光二極體晶片22設置於 該容置槽212之底部，並與該第一電極23及第二電極24電 連接。於本實施例中，該發光二極體晶片22設置於該第 一電極23上，並分別與該第一電極23及第二電極24通過 金線27形成電連接。該第一電極23及第二電極24可與外 部電源相連，從而給該發光二極體晶片22提供電能。 該第一散射層25設置於該容置槽21 2中且覆蓋該發光二極 體晶片22，從而避免水氣滲透以氧化該發光二極體晶片 22及金線27。 該第一散射層25包括第一透明基材251及均勻分佈於該第 一透明基材251中之散射粒子252。 該第一透明基材251之材料可選用矽膠、樹脂等透光材料 表單编號A0101 第6頁/共18頁 1003287297-0 [0013] 1362767 100年08月09日修正替換頁 。於本實施例中，該第一透明基材251的材質為矽膠，其 折射率大於等於1. 4。 .[0005] A light-emitting diode includes a reflector, at least one LED chip, and a plurality of electrodes, the reflector includes a body and a receiving groove disposed on the body, the plurality of electrodes are disposed on The body is located at the bottom of the accommodating groove, and the at least one LED chip is disposed in the accommodating groove and electrically connected to the plurality of electrodes. The light emitting diode further includes a first scattering layer and a light conversion layer. The first scattering layer is disposed in the accommodating groove and covers the at least one light emitting diode chip. The first scattering layer contains scattering particles. The light conversion layer is disposed on a side of the first scattering layer away from the at least one LED chip. [0006] Compared with the prior art, the light emitting diode includes a first scattering layer and a light conversion layer, the first scattering layer covers the at least one light emitting diode wafer and contains scattering particles therein, and the scattering particles can The light emitted by the light-emitting diode chip is uniformly scattered, so that the excitation light emitted from the first scattering layer has good uniformity, and the uniform excitation light is further converted to have uniformity after being converted by the light conversion layer. Good white light. [Embodiment] 096151137 Form No. A0101 Page 5 of 18 1003287297-0 1362767 [0007] [0009] [0010] [0012] 096151137 Correction of the replacement page on August 09, 100 The drawings further illustrate the invention in detail. -> * * See _2 > The present invention provides a light-emitting diode 20 comprising a reflector cup 21, a light-emitting diode wafer 22, a first electrode 23, and a second electrode 24, a first scattering layer 25 and a light conversion layer 26. The reflector 21 includes a body 210 and a receiving groove 212 disposed on the body 210. The body 210 includes a base 2102, an annular sidewall 2104 disposed on the base 2102, and the receiving slot 212 is surrounded by the base 2102 and the annular sidewall 2104. The inner surface of the annular side wall 2104 is for reflecting light. The accommodating groove 212 has a tapered shape, and its opening gradually becomes larger in a direction away from the light emitting diode wafer 22. The first electrode 23 and the second electrode 24 are disposed on the substrate 211 and extend to the bottom of the accommodating groove 212, respectively. The LED chip 22 is disposed at the bottom of the accommodating groove 212 and electrically connected to the first electrode 23 and the second electrode 24. In the present embodiment, the LED array 22 is disposed on the first electrode 23, and is electrically connected to the first electrode 23 and the second electrode 24 via the gold wire 27, respectively. The first electrode 23 and the second electrode 24 can be connected to an external power source to supply electrical energy to the LED chip 22. The first scattering layer 25 is disposed in the accommodating groove 21 2 and covers the luminescent diode wafer 22 to prevent moisture from penetrating to oxidize the luminescent diode wafer 22 and the gold wire 27. The first scattering layer 25 includes a first transparent substrate 251 and scattering particles 252 uniformly distributed in the first transparent substrate 251. The material of the first transparent substrate 251 can be selected from a light-transmitting material such as silicone or resin. Form No. A0101 Page 6 of 18 1003287297-0 [0013] 1362767 Correction replacement page on August 09, 100. I. The refractive index of the first transparent substrate 251 is 矽. .
[0014] 該散射粒子252的材質可為二氧化鈦（Ti〇2)、塑膠、 PMMA、溶融石英（Fused Si 1 ica)、三氧化二|g(Al90Q) L ο 、氧化鎂（MgO)、矽鋁氡氮聚合物（Sialon)或其他透明 氮氧化物。該散射粒子252之折射率範圍為1.卜2. 4，且 其不同於該第一透明基材251之折射率。該散射粒子252 可為球形、條形等任意形狀，其粒徑小於等於3微米。於 本實施粒中，該散射粒子252為球形，且其粒徑範圍為 0. 5〜2. 5微米。 [0015] 該散射粒子252用於散射由該發光二極體晶片22發出的光 ，於此，以該發光二極體晶片22發出的光為藍光為例進 行說明。該發光二極體晶片22發出的藍光直接進入該第 一散射層25，入射到該散射粒子252之藍光被散射，從而 使藍光於該第一散射層25中被均勻的發散，入射到該環 形側壁21 04之内表面上之光可被其反射以增加光利用率 [0016] 該光轉換層26設置於該第一散射層25之遠離該發光二極 體晶片22的一側。該光轉換層26包括第二透明基材261及 均勻分佈於該第二透明基材261中之螢光粉262。 [0017] 該第二透明基材261的材質可選用矽膠、樹脂等透光材料 。於本實施例中，該第二透明基材261的材質為矽膠，其 折射率小於或等於該第一透明基材251之折射率，從而減 少該發光二極體晶片22所發出的光從該第一散射層25射 096151137 表單編號A0101 第7頁/共18頁 1003287297-0 1362767 100年08月09日釣 向該發光二極體20外的全反射，以提高該發光二極體 的出光效率。、· / '… [0018] 該螢光粉262的材質可為YAG、矽酸鹽（Si 1 icate)、氮 化物或氧化物。該螢光粉262可為球形、條形等任意形狀 。於本實施粒中，該螢光粉262為球形，且其粒徑範圍為 40〜80微米，從而有利在於該光轉換層26中均勻混合。該 螢光粉262是用在於受該發光二極體晶片22發出的部分光 激發後產生其他波長之光，並與該發光二極體晶片22發 出的剩下之光混光後以使該發光二極體20發出白光。於 本實施例中，該螢光粉262為YAG黃光螢光粉，即於其受 到從該第一散射層25出射的部分藍光激發後能夠發出黃 光，該黃光與剩下之藍光混光後產生白光並射出該發光 二極體20。 [0019] 該光轉換層26包括一個鄰近該第一散射層25之入光面263 ’以及一個與該入光面263相對的出光面264。該入光面 263為向該發光二極體晶片22凸設之凸曲面，其與該發光 二極體晶片22之間之最小距離D大於等於50微米，從而能 有效之避免該金線27露出該第一散射層25。 [0020] 由於該發光二極體晶片22發出的藍光於該第一散射層25 中已經被散射粒子252均勻散射，所以由該第一散射層25 出射的藍光具有良好的均勻度，即進入該光轉換層26之 入光面263之光為均勻的藍光，該均勻的藍光激發該光轉 換層26中均勻分佈之螢光粉2 62可進一步的產生均勻度較 佳的白光》另’該光轉換層26中之螢光粉262遠離該發光 二極體晶片22 ’所以受到該發光二極體晶片22發光時所 096151137 1003287297-0 表單編St A0101 第8頁/共18頁 1362767 π———-— 100年·08月09日修正替换頁 產生之高溫影響較小，從而使該螢光粉262保持較穩定之 广〃效率，從而提高了該發光二極體20之出光效率。 • ， , [0021] 該光轉換層26之出光面264可為平面或任意曲面。 [0022] 請參見圖3，該光轉換層26之出光面264為沿遠離該發光 二極體晶片22之方向凸設之凸曲面，從而可使經由該出 光面2 64出射的光線由該出光面264之周圍向其中心產生 會聚狀偏轉，從而使該發光二極體20發出的光線會聚性 更佳。也就是說，設計為凸曲面之出光面264使該發光二 φ 極體20之輻射範圍更加集中。另，該出光面264可根據實 際需要具有不同的曲率，使該發光二極體20發出的光線 之會聚程度不同。也就是說，該出光面264具有不同的曲 率，可使該發光二極體20具有不同的輻射範圍，即可調 整該發光二極體20之光場形狀。[0014] The scattering particles 252 may be made of titanium dioxide (Ti〇2), plastic, PMMA, Fused Si 1 ica, bis(g), magnesium oxide (MgO), yttrium aluminum. Niobium polymer (Sialon) or other transparent nitrogen oxides. The scattering particle 252 has a refractive index in the range of 1.2.4, and is different from the refractive index of the first transparent substrate 251. The scattering particles 252 may have any shape such as a sphere, a strip, or the like, and have a particle diameter of 3 μm or less. 5微米。 The granules, the particle size range of 0. 5~2. 5 microns. The scattering particles 252 are used to scatter the light emitted from the light-emitting diode wafer 22. Here, the light emitted from the light-emitting diode wafer 22 is taken as an example. The blue light emitted by the LED chip 22 directly enters the first scattering layer 25, and the blue light incident on the scattering particle 252 is scattered, so that the blue light is uniformly diverged in the first scattering layer 25, and is incident on the ring. The light on the inner surface of the side wall 21 04 can be reflected by it to increase the light utilization efficiency. [0016] The light conversion layer 26 is disposed on a side of the first scattering layer 25 remote from the light emitting diode wafer 22. The light conversion layer 26 includes a second transparent substrate 261 and a phosphor powder 262 uniformly distributed in the second transparent substrate 261. [0017] The material of the second transparent substrate 261 may be selected from a light-transmitting material such as silicone or resin. In this embodiment, the second transparent substrate 261 is made of silicone, and its refractive index is less than or equal to the refractive index of the first transparent substrate 251, thereby reducing the light emitted by the LED substrate 22 from the The first scattering layer 25 emits 096151137 Form No. A0101 Page 7 / Total 18 pages 1003287297-0 1362767 On August 09, 100, the total reflection outside the light-emitting diode 20 is taken to improve the light-emitting efficiency of the light-emitting diode . [0018] The material of the phosphor powder 262 may be YAG, silicate, nitride or oxide. The phosphor powder 262 may have any shape such as a sphere or a strip. In the present embodiment, the phosphor powder 262 is spherical and has a particle diameter ranging from 40 to 80 μm, which is advantageous in that the light conversion layer 26 is uniformly mixed. The phosphor powder 262 is generated by being excited by a portion of the light emitted from the light-emitting diode wafer 22 to generate light of another wavelength, and is mixed with the remaining light emitted from the light-emitting diode wafer 22 to cause the light to be emitted. The diode 20 emits white light. In the present embodiment, the phosphor powder 262 is a YAG yellow light phosphor, that is, after being excited by a portion of the blue light emitted from the first scattering layer 25, it can emit yellow light, and the yellow light is mixed with the remaining blue light. White light is generated and emitted from the light emitting diode 20. The light conversion layer 26 includes a light incident surface 263' adjacent to the first scattering layer 25 and a light exit surface 264 opposite to the light incident surface 263. The light incident surface 263 is a convex curved surface protruding from the light emitting diode wafer 22, and the minimum distance D between the light incident surface and the light emitting diode wafer 22 is 50 μm or more, so that the gold wire 27 can be effectively prevented from being exposed. The first scattering layer 25. [0020] Since the blue light emitted by the LED wafer 22 has been uniformly scattered by the scattering particles 252 in the first scattering layer 25, the blue light emitted by the first scattering layer 25 has good uniformity, that is, enters the The light entering the light surface 263 of the light conversion layer 26 is uniform blue light, and the uniform blue light exciting the uniformly distributed phosphor powder 2 62 in the light conversion layer 26 can further produce white light with better uniformity. The phosphor powder 262 in the conversion layer 26 is away from the LED wafer 22'. Therefore, when the LED chip 22 is illuminated, the 096151137 1003287297-0 form is compiled. St A0101 Page 8 / 18 pages 1362767 π ——— - The correction of the replacement page from 100 years to August 09 is less affected by the high temperature, so that the phosphor powder 262 maintains a relatively stable and wide efficiency, thereby improving the light extraction efficiency of the LED 20. • , [0021] The light exit surface 264 of the light conversion layer 26 can be a plane or an arbitrary curved surface. [0022] Referring to FIG. 3, the light-emitting surface 264 of the light conversion layer 26 is a convex curved surface protruding away from the light-emitting diode wafer 22, so that the light emitted through the light-emitting surface 264 can be emitted by the light-emitting surface. The periphery of the face 264 produces a converging deflection toward the center thereof, thereby making the light emitted by the light emitting diode 20 more convergent. That is to say, the light exiting surface 264 designed as a convex curved surface makes the radiation range of the light emitting diode body 20 more concentrated. In addition, the light-emitting surface 264 may have different curvatures according to actual needs, so that the light emitted by the light-emitting diodes 20 is different in degree of convergence. That is to say, the light-emitting surface 264 has different curvatures, and the light-emitting diode 20 can have different radiation ranges, that is, the light field shape of the light-emitting diode 20 can be adjusted.
[0023] 請參見圖4，該光轉換層26之出光面264為向該發光二極 體晶片22凹設之凹曲面，從而可使經由該出光面264出射 的光線由該出光面264之中心向其周圍產生輻射狀偏轉， 從而使該發光二極體20具有較大之輻射範圍。另，該出 光面264可根據實際需要具有不同的曲率，使該發光二極 體20發出的光線之發散程度不同。也就是說，該出光面 264具有不同的曲率，可使該發光二極體20具有不同的輻 射範圍，即可調整該發光二極體20之光場形狀。 [0024] 另，該光轉換層26之中間比周圍厚，且其中之螢光粉262 均勻分佈於該光轉換層26中，所以該光轉換層26之中間 具有較多的螢光粉262。因此，當從該第一散射層25之中 096151137 表單編號Α0101 第9頁/共18頁 1003287297-0 1362767 [0025] [0026] [0027] [0028] [0029] 100年.08月 09 日 ^茛 I 間出射的藍光較多而周圍出射的較少時，該第一散射層 25之中間處存於較多的螢厶粉262將被籃光所激發而發出 黃光’從而有利於提高該發光二極體2〇所發出的白光之 均勻度。 ‘ 請參見圖5 ’本發明第二實施例提供之發光二極體3〇，其 與上述第一實施例所提供之發光二極體2〇基本相同，不 同的處在於： 反光杯31之本體310所包括之基底31 02及環形側壁31 04 為一體成型結構； φ 發光二極體晶片32具有並行設置之第一接觸電極321與第 一接觸電極322，其覆晶封裝（Flip-chip)於容置槽312 之底部，即該第一接觸電極321與該第二接觸電極322分 別通過焊料與該容置槽312底部之第一電極33與第二電極 34形成電連接； 該發光二極體30還包括一第二散射層38 ,該第二散射層 38設置於光轉換層36之遠離該發光二極體晶片32的一側 0 。該第二散射層38包括第三透明基材381及均勻分佈於該 第三透明基材381中之散射粒子382。該散射粒子382用 於散射經由該光轉換層36中之螢光粉362轉換後出射的白 光，從而進一步提高該發光二極體3〇之出光均勻性。 該第三透明基材381及該散射粒子382的材質分別與上述 第一透明基材251及其令之散射粒子252基本相同，且該 第三透明基材381之折射率小於或等於第二透明基材361 之折射率，從而減少由該光轉換層36出射的光線射向該 096151137 表單編號A0101 第1〇頁/共18頁 1003287297-0 1362767 » 100年08月09日核正替換頁 發光二極體30外的全反射，以提高該發光二極體30的出 光效率。.-* , [0030] 由於該發光二極體晶片32覆晶封裝於該容置槽31 2之底部 ，所以該光轉換層36之入光面363與該發光二極體晶片32 之間之距離可小於50微米，只要避免該發光二極體晶片 32露出第一散射層35即可。 [0031] 該第二散射層38具有一遠離該光轉換層36之出光面383， 該出光面383可為平面或任意曲面。若該出光面383為沿 遠離該發光二極體晶片32之方向凸設之凸曲面，或向該 發光二極體晶片32凹設之凹曲面同樣可使該發光二極體 30具有不同的輻射範圍，即具有不同的光場形狀。其原 理與上述第一實施例中之光轉換層26之出光面264基本相 同，於此不再贅述。 [0032] 綜上所述，本發明確已符合發明專利之要件，遂依法提 出專利申請。惟，以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本 案技藝之人士援依本發明之精神所作之等效修飾或變化 ，例如：上述發光二極體包括複數個發光二極體晶片及 複數個電極，該複數個發光二極體晶片分別與該複數個 電極形成電連接；光轉換層僅包括螢光粉等，這些變化 皆應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 [0033] 圖1係一種先前的發光二極體之剖面示意圖。 [0034] 圖2係本發明第一實施例發光二極體之剖面示意圖。 096151137 表單編號A0101 第11頁/共18頁 1003287297-0 1362767 100年08月09日梭正_莨 [0035] 圖3係圖2中發光二極體中第二填充層之出光面為沿遠離 ’發光二極體晶片之方向凸設之凸曲面之剖.面示意圖。 [0036] 圖4係圖2中發光二極體中第二填充層之出光面為向發光 二極體晶片凹設之凹曲面之剖面示意圖。 [0037] 圖5係本發明第二實施例發光二極體之剖面示意圖。 【主要元件符號說明】 [0038] .發光二極體：10，20，30 [0039] 反光杯：11，21，31 [0040] 發光二择體晶片：12，22，32 [0041] 封裝體：13 [0042] 容置槽：110，212，312 [0043] 正電極：111 [0044] 負電極：11 2 [0045] 底部：1102 [0046] 側壁：1104 [0047] 開口 ： 1106 [0048] 螢光粉：132，262，362 [0049] 第一電極：23，33 [0050] 第二電極：24，34 [0051] 第一散射層：25，35Referring to FIG. 4, the light-emitting surface 264 of the light conversion layer 26 is a concave curved surface that is recessed toward the light-emitting diode wafer 22, so that the light emitted through the light-emitting surface 264 can be centered by the light-emitting surface 264. Radial deflection is generated around it, so that the light-emitting diode 20 has a larger radiation range. In addition, the light-emitting surface 264 can have different curvatures according to actual needs, so that the light emitted by the light-emitting diode 20 is different in degree of divergence. That is to say, the light-emitting surface 264 has different curvatures, so that the light-emitting diodes 20 have different radiation ranges, that is, the light field shape of the light-emitting diodes 20 can be adjusted. [0024] In addition, the middle of the light conversion layer 26 is thicker than the periphery, and the phosphor powder 262 is evenly distributed in the light conversion layer 26, so that the light conversion layer 26 has a large amount of phosphor powder 262 in the middle. Therefore, when from the first scattering layer 25, 096151137 form number Α 0101, page 9 / total 18 pages 1003287297-0 1362767 [0025] [0026] [0028] [0029] [0029] 100 years. August 09th ^ When there are more blue light emitted from 茛I and less emissions around the 散射I, more fluorite powder 262 in the middle of the first scattering layer 25 will be excited by the basket light to emit yellow light, thereby facilitating the improvement. The uniformity of white light emitted by the light-emitting diode 2〇. Referring to FIG. 5, a light-emitting diode 3A according to a second embodiment of the present invention is substantially the same as the light-emitting diode 2〇 provided in the first embodiment, except that the body of the reflector 31 is: The substrate 31 02 and the annular sidewall 31 04 included in the 310 are integrally formed; the φ LED 32 has a first contact electrode 321 and a first contact electrode 322 disposed in parallel, and is flip-chip mounted thereon. The first contact electrode 321 and the second contact electrode 322 are respectively electrically connected to the first electrode 33 and the second electrode 34 at the bottom of the accommodating groove 312 by the solder; the light emitting diode The 30 further includes a second scattering layer 38 disposed on a side 0 of the light conversion layer 36 remote from the LED substrate 32. The second scattering layer 38 includes a third transparent substrate 381 and scattering particles 382 uniformly distributed in the third transparent substrate 381. The scattering particles 382 are used to scatter white light that has been converted by the phosphor powder 362 in the light conversion layer 36, thereby further improving the light uniformity of the light-emitting diodes 3. The materials of the third transparent substrate 381 and the scattering particles 382 are substantially the same as the first transparent substrate 251 and the scattering particles 252 thereof, and the refractive index of the third transparent substrate 381 is less than or equal to the second transparent The refractive index of the substrate 361, thereby reducing the light emitted by the light conversion layer 36, is directed to the 096151137 Form No. A0101 Page 1 / Total 18 Pages 1003287297-0 1362767 » August 09, 2009 Nuclear Replacement Page Illumination II Total reflection outside the polar body 30 to improve the light-emitting efficiency of the light-emitting diode 30. The light-emitting diode chip 32 is packaged on the bottom of the accommodating groove 31 2 , so that the light-into-plane 363 of the light-converting layer 36 and the light-emitting diode chip 32 are between the light-emitting diodes 32 . The distance may be less than 50 micrometers as long as the light-emitting diode chip 32 is prevented from exposing the first scattering layer 35. [0031] The second scattering layer 38 has a light exit surface 383 away from the light conversion layer 36. The light exit surface 383 can be a plane or an arbitrary curved surface. If the light-emitting surface 383 is a convex curved surface protruding in a direction away from the light-emitting diode wafer 32, or a concave curved surface recessed toward the light-emitting diode wafer 32, the light-emitting diode 30 can have different radiation. The range, that is, has different light field shapes. The principle is substantially the same as that of the light-emitting surface 264 of the light-converting layer 26 in the first embodiment, and will not be described again. [0032] In summary, the present invention has indeed met the requirements of the invention patent, and the patent application is filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in accordance with the spirit of the present invention, for example, the light emitting diode includes a plurality of light emitting diode chips and a plurality of electrodes, and the plurality of light emitting diode chips are respectively The plurality of electrodes form an electrical connection; the light conversion layer includes only phosphor powder, etc., and such variations are intended to be included in the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS [0033] FIG. 1 is a schematic cross-sectional view of a prior light-emitting diode. 2 is a schematic cross-sectional view of a light emitting diode according to a first embodiment of the present invention. 096151137 Form No. A0101 Page 11 / Total 18 Page 1003287297-0 1362767 100年08月09日梭正_莨[0035] Figure 3 is the light-emitting diode of Figure 2 in the second filling layer of the light-emitting surface is away from the ' A schematic cross-sectional view of a convex curved surface in which the direction of the light-emitting diode chip is convex. 4 is a schematic cross-sectional view showing a light-emitting surface of the second filling layer in the light-emitting diode of FIG. 2 as a concave curved surface recessed toward the light-emitting diode wafer. 5 is a schematic cross-sectional view of a light emitting diode according to a second embodiment of the present invention. [Description of main component symbols] [0038] Light-emitting diode: 10, 20, 30 [0039] Reflector: 11, 21, 31 [0040] Light-emitting diode: 12, 22, 32 [0041] Package :13 [0042] accommodating groove: 110, 212, 312 [0043] Positive electrode: 111 [0044] Negative electrode: 11 2 [0045] Bottom: 1102 [0046] Side wall: 1104 [0047] Opening: 1106 [0048] Fluorescent powder: 132, 262, 362 [0049] First electrode: 23, 33 [0050] Second electrode: 24, 34 [0051] First scattering layer: 25, 35
096151137 表單編號Α0101 第12頁/共18頁 1003287297-0 1362767 * 100年08月09日修正_頁 [0052] 光轉換層：26，36 • [0053] • %7-^· * - · 金線：27 * [0054] 第二散射層：38 [0055] 本體：210，310 ^ [0056] 第一透明基材：251 [0057] 散射粒子：252，382 [0058] • [0059] 第二透明基材：261，361 入光面：263，363 [0060] 出光面：264，383 [0061] 第一接觸電極：321 [0062] 第二接觸電極：322 [0063] 第三透明基材：381 [0064] • [0065] 基底：2102，3102 環形側壁：2104，3104 096151137 表單編號A0101 第13頁/共18頁 1003287297-0096151137 Form No. 1010101 Page 12 of 18 1003287297-0 1362767 * Corrected on August 09, 100 _ [0052] Light conversion layer: 26, 36 • [0053] • %7-^· * - · Gold wire : 27 * [0054] Second scattering layer: 38 [0055] Body: 210, 310 ^ [0056] First transparent substrate: 251 [0057] Scattering particles: 252, 382 [0058] • [0059] Second transparent Substrate: 261,361 Light-in surface: 263,363 [0060] Light-emitting surface: 264,383 [0061] First contact electrode: 321 [0062] Second contact electrode: 322 [0063] Third transparent substrate: 381 [0064] [0065] Substrate: 2102, 3102 Annular Side Wall: 2104, 3104 096151137 Form No. A0101 Page 13 of 18 1003287297-0