TWI361645B - Process of fabricating circuit board - Google Patents

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a circuit board process, and more particularly to a circuit board having a high density interconnect (HDI). Process. [Prior Art] In the current semiconductor packaging process, since the wiring board has the advantages of fine wiring, compact assembly, and good performance, the wiring board has become one of the frequently used components. The circuit board can be assembled with a plurality of electronic components such as a chip and a passive component. Through the circuit board, these electronic components are electrically connected to each other, and signals can be transmitted between these electronic components. In general, the circuit board is mainly composed of a plurality of patterned circuit layers and a plurality of dielectric layers, and is formed by a conductive via hole (c〇n (juctive via) Achieved • Electrical connection between patterned circuit layers. In recent years, electronic products have become smaller, lighter, thinner, high-speed, high-performance, high-density, low-cost, and electronic component packaging technology is also facing a high number of With the development of refinement and accumulation, the circuit board is also moving toward high-density wiring, thin-line small holes, composite multi-layering, and thin-plate development. The problem of the inner wiring (HDI) circuit board is to use the conductive blind hole to match the circuit layer. Fme piteh to achieve a highly interconnected technology 1361645 0809003 29453twf.doc / n unit area can carry more electronic components or accommodate Ximen Road. Because the 5 density interconnect circuit board contains multi-layer lines ^ Green ^ f The good connection between the layers of the layers becomes one of the keys of the circuit board of the high-density interconnect. [Invention] The present invention provides a circuit board process for making interconnects The circuit board is made of a circuit board process. First, the line-based circuit substrate has an upper surface and a first line pattern on the upper surface. Then, the shape of the line is a dielectric layer of the wood Covering the upper surface and the first-line pattern conductive junction is taken by the human body and electrically connected to the first-figure diagram. On the surface of the electric layer, the indented pattern and the conductive-second line pattern, wherein the first pattern is Forming the connection to the first-line pattern. The circuit pattern is electrically connected by the conductive structure: in the embodiment, the method for forming the intaglio pattern described above - the field shot # 'Electronic_etching or machining process. In one embodiment, the upper knife cutting, sand blasting or outer (four) cutting. The weighting machine plus two processes include a water source package, the above-mentioned laser light using a laser touch (four) line laser, excimer secret or far infrared light 1361645 0809003 29453twf In an embodiment of the invention, the material of the dielectric layer comprises a high molecular polymer. In an embodiment of the invention, the high molecular polymer is selected from the group consisting of bad milk tree, Modified soil latex, Polyester, propyl fumarate, fluoro-po丨ymer, polyphenylene oxide, p〇丨yimide, phenolic resin ), polysulfone, silicone polymer, bismaleimide triazine modified epoxy (BT Resin), cyanate ester, polyethylene, poly Carbonate resin (PC), acrylonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (PET) Resin, polybutylene terephthalate (PBT) resin, liquid crystal polymer (LCP), polyamine 6 (polyamide 6, PA 6 ), nylon (Nylon), copolymerization A group consisting of polyoxymethylene (POM), polyphenylene sulfide (PPS), and cyclic olefin copolymer (COC). In one embodiment of the invention, the dielectric layer described above comprises a plurality of catalyst particles. In an embodiment of the invention, the above-mentioned catalyst particles comprise a plurality of nano metal particles. In one embodiment of the invention, the materials of the catalyst particles 1361645, 0809003 29453twf.doc/n include a plurality of transition metal coordination compounds. In one embodiment of the invention, the materials of the transition metal complex compounds described above include transition metal oxides, transition metal nitrides, transition metal complexes or transition metal chelates. In one embodiment of the present invention, the transition metal complex compound is selected from the group consisting of: rhetoric, steel, silver, gold, nickel, palladium, platinum, cobalt,

Groups of 姥, silver, iron, Μ, chrome, key, crane, Syrian, group, and Qin. In the tenth embodiment of the present invention, the above-mentioned forming an intaglio pattern on the surface of the dielectric layer further includes activating the portion of the catalyst particles to form an active layer on the inner surface of the intaglio pattern. In one embodiment of the invention, the method of forming the first indentation pattern comprises a chemical deposition process.

In the embodiment of the present invention, the above-described step of forming a dielectric layer having a conductive structure, first, forming a copper foil layer on the surface of the dielectric layer, and subsequently irradiating a dielectric layer on the copper foil layer Shot to form a blind via structure extending from the copper foil layer to the first line pattern. The electric seed layer is in the blind hole structure and the surface of the copper foil layer. A conductive layer is formed through the electric ore. Finally, a portion of the conductive layer, the second sub-layer and the _ layer are removed to form a conductive structure and expose the dielectric layer. In the embodiment of the present invention, the conductive layer is copper, silver, and nickel. , tin or aluminum. In the embodiment of the present invention, the above method of removing portions of the plating seed layer and the copper foil layer includes etching or grinding. Electric 曰 8 1361645, 0809003 29453twf.doc/i In this hair-effect, the upper layer is provided with a conductive layer: the step, first 'formation ~ copper box layer on the dielectric layer' followed by 'the formation of copper (four) Dielectric layer illumination - laser, ^. a blind hole structure extending from the copper box layer to the first line pattern. Fill = less 枓:: In the pore structure, to form a conductive structure. Oh, remove the copper to expose the surface of the dielectric layer. Yun’

In an embodiment of the invention, the laser source described above comprises a line laser, an ultraviolet laser, a quasi-molecular laser or a far-infrared laser. In one embodiment of the invention, the conductive paste is preferably electrically conductive (four). The metal conductive = t-implementation, the above metal conductive paste includes copper glue, silver glue, smuggling, copper poor, silver paste or solder paste. In the invention, the above-mentioned polymer conductive material comprises a composite two-molecule conductive material or a structural type polymer conductive material. In the embodiment of the present invention, the above composite type high score

The material is prepared by compounding a conductive material into a composite material, a surface composite or a laminate compound. In the embodiment of the present invention, the material type of the above-mentioned composite polymer conductive material includes plastic, rubber, resin paint or adhesive. In the present invention - the conductive filler described above includes carbon black, metal powder, metal foil, metal fiber or carbon fiber. In an embodiment of the invention, the material of the structural type polymer conductive material comprises a polyacetylene material, a gasified sulfur, and a poly. ratio. Each, polyphenylene sulfide scale, polyphthalonitrile compound or polyaniline or polythiophene. 1361645 0809003 29453twf.doc/n a good example f, the above-mentioned shape, the step of the dielectric layer, first, the formation of the "four" electrical structure, followed by pressing the dielectric layer on the line base The material is on the case to form a conductive structure. An isoelectric cone dielectric layer, in one embodiment of the invention, includes printing or wire bonding. The above method for forming a conductive cone

In one embodiment of the invention, a glue or silver paste. In summary, the present invention forms a first line pattern material electrical structure of the connection line substrate prior to the dielectric layer, and then forms an intaglio _ which can be buried in the second line pattern by laser exposure on the surface of the dielectric layer. The second line pattern is connected to the first material ride by the conductive structure, and is called a circuit board having a high density interconnection. Therefore, the circuit board process of the present invention can avoid the limitation that the second circuit pattern is formed simultaneously with the blind hole structure in the intaglio pattern.

The above-mentioned conductive cone material includes the limitation of the hole filling ability and the long processing time in the case of the copper case and the conductive structure, and can effectively shorten the production process of the circuit board, thereby expanding the application range of the circuit board having the high density interconnection. . The above and other objects, features, and advantages of the present invention will become more apparent from the understanding of the appended claims. [Embodiment] FIG. 1A to FIG. 1 are diagrams showing a circuit board process according to an embodiment of the present invention. Referring first to FIG. 1A, a circuit board process in accordance with the present embodiment' first provides a wiring substrate 110. The circuit substrate U has an upper surface 112 and 1361645. 0809003 29453twf.doc/n a line pattern 114, wherein the first line pattern 114 is located on the upper surface 112, that is, the first line pattern 114 can be regarded as a kind General line (ie non-embedded line). It is worth mentioning that the structure of the wiring substrate 11 can have only a single wiring layer or a multilayer wiring layer. That is, the wiring substrate u can be a single layer circuit substrate, a double layer circuit substrate, or a multi-layer circuit substrate. In the present embodiment, the circuit substrate 110 of FIG. 18 is illustrated by a plurality of dielectric layers (not shown) and a plurality of patterned circuit layers (not shown) alternately stacked. . Referring to FIG. 1B, a dielectric layer 12 is formed on the wiring substrate 110, wherein the dielectric layer 120 covers the upper surface U2 of the wiring substrate no and the first line pattern 114. In detail, in the present embodiment, the dielectric layer includes a plurality of catalyst particles 122, and these catalyst particles 122 include a plurality of nano metal particles. The material of the catalyst particles 122 includes a transition metal complex compound, and the material of the transition metal complex compound may include a transition metal oxide, a transition metal nitride, a transition metal complex or a transition metal chelate, and these transition metals The material of the coordination compound is selected from the group consisting of zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, ruthenium, iron, manganese, chromium, ruthenium, crane, hunger, group and titanium. One of the materials. Further, these catalyst particles 122 are, for example, a plurality of metal oxide particles, a plurality of metal nitride particles, a plurality of metal complex particles, a plurality of metal chelate particles or a plurality of metal particles, and these contacts The material of the media particles m 1361645, 0809003 29453twf.doc/n may include words, copper, silver, gold, record, eternal, Ming, beginning, money, bismuth, iron, manganese, chromium, molybdenum, tungsten, vanadium, button or titanium. Or a combination of these metals. That is, the metal atoms in the catalyst particles 122 may be zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium, ruthenium, iron, manganese, chromium, molybdenum, tungsten, vanadium, or Titanium, and these catalyst particles 122 may comprise any combination of these metal atoms. For example, these catalyst particles 122

For example, copper oxide, molybdenum bimetallic nitride (c〇2M〇3Nx) particles or metal particles.

It is worth mentioning that the present invention does not limit the material disk type of the dielectric layer 12A. Although the dielectric layer 120 mentioned herein is embodied to include a plurality of catalyst particles 122, in other embodiments, The material of the dielectric layer 12() may also be a high-component polymer, wherein the high-molecular polymer is selected from the group consisting of Wei resin modified with epoxy resin, polyester, acrylic acid, fluoropolymer, polyphenylene Oxide: polyg! imine, secret resin, polyhard, ♦ polymer, bt ^ 曰 cyanide 1 酉曰, polyethylene, polycarbonate 树脂 resin, propylene-butadiene _ ^ ethylene copolymerization A group consisting of polyethylene terephthalate, polyparaphenylene terephthalate, liquid crystal polymer, poly-6, nylon, and copolymerized polystyrene ring copolymer. The technical solution of Χ ’ 1 is not formed by the formation of the steel foil layer 140 over the dielectric layer 120 ′ steel layer 140 covering the dielectric layer 120, please refer to Figure 1C, then, on the surface. In this embodiment, it can be regarded as a protective layer. Referring to FIG. 1D, then the dielectric layer 0908003 29453twf.d〇c/n 120 having the steel foil layer 140 is irradiated with a first tribute to the 'line pattern: 1 blind:: less-from _ layer (10) extending a), the t-blind hole (only the portion dUf of the surface 112 is schematically shown in FIG. 1D is located at one of the line substrates (10), and the laser beam L1 is infrared rays." In the present embodiment, the first laser L1 can also be ultraviolet; in his embodiment, the first-outline laser source, the field source, the excimer laser source or the far red seed layer 15° in the blind hole junction can be riding, and electricity Forming a "plating seed layer 150 or a word. The material of θ is, for example, copper, recording with reference to FIG. 1F, and the conductive layer 160, the sub-layer 150 is plated to form the surface of the surface 140 completely. And the copper layer includes copper, silver, nickel, tin or Ming. The river is borrowed ^ ^ Figure 1G 'then' remove some of the conductive layer 160, part of the plating == such as 4 〇 to form a conductive structure 13 〇 In the exposed embodiment, the conductive structure is electrically connected to the circuit pattern 112. In particular, the surface of the conductive structure 130 and the dielectric layer 1 The surface of the layer 20 is cut in. Further, the method of removing a portion of the conductive layer 160, the portion of the plating seed layer 15 and the copper foil layer 14 of the present embodiment includes a residue or a grinding. Please refer to FIG. 1H, followed by A recessed pattern 126 is formed on the surface of the dielectric layer 12 136.1643 0809003 29453 twf.doc/n by a second laser [2], wherein the recessed pattern 126 is connected to the conductive structure 130. In particular, In an embodiment, when the second laser L2 ablates the dielectric layer 120 having the catalyst particles 122, some of the catalyst particles 122 are activated while forming the intaglio pattern 丨26 on the surface of the dielectric layer 12A. And exposed to the inner surface of the intaglio pattern 126, an active layer 124 is formed. The catalyst particles 122 in Fig. 1H will indicate whether the catalyst particles 122 are activated in black or white. The black catalyst particles 122 represent activated. • Catalyst particles 122 (i.e., activation layer 124), while white catalyst particles 122 represent unactivated catalyst particles 122. In this embodiment, second laser L2 is an ultraviolet laser source. In the example, the second laser can also be an infrared laser source, and the standard laser A sub-laser source or a far-infrared laser source. It is worth mentioning that the present invention does not limit the method of forming the intaglio pattern 126, although the method of forming the intaglio pattern 26 referred to herein is embodied as a laser. Ablation, in other embodiments, the intaglio pattern 126 may also be formed by a plasma etching or machining process, wherein the machining process further includes waterjet cutting, sand blasting or profile cutting. The technical solutions that can be employed in the present invention are still within the scope of the present invention. Referring to FIG. II, finally, a conductive material is disposed in the recess pattern 126 to form a second line pattern 170' wherein the second line pattern 170 is electrically connected to the first line pattern 114 by the conductive structure 130. In the present embodiment, the method of forming the second wiring pattern 170 in the intaglio pattern 126 includes a chemical deposition method. Further, the second line pattern 170 is formed on the active layer 124 in the recess pattern 126 by a chemical method, and the first line patterns 170 are substantially aligned with the surface of the dielectric layer 120, in other words, , IS] 14 1361645 0809003 29453twf.doc/n These second line patterns 170 can basically be regarded as a buried line. Thus, the circuit board 100 has been substantially completed. In short, the circuit board process of the present embodiment first forms a conductive structure 130 connecting the first line pattern 114 of the wiring substrate U0 to the dielectric layer 120 by means of electroplating, and then, with the second laser L2. An intaglio pattern 126 is formed on the surface of the dielectric 120, and then a second line pattern 17A embedded in the recess pattern 126 is formed by chemical deposition, wherein the second line pattern 170 is electrically connected by the conductive structure 130. The wiring board 具有 having a high-density interconnection is completed by being connected to the first line pattern 114'. The steps of the circuit board process of the present embodiment can avoid the limitation of the hole filling ability and the long process time when the second line pattern 170 and the conductive structure 130 are simultaneously formed in the recessed pattern 126 and the blind hole structure B1. And other issues. In addition, the dielectric layer 120 of the present embodiment has a plurality of catalyst particles 122. When the second laser light L2 is irradiated on the surface of the dielectric layer 120, part of the catalyst particles 122 are activated to form the active layer 124. Therefore, the second line pattern 170' can be formed directly on the active layer 124 in the recess pattern 126 by chemical deposition, thereby further expanding the dielectric layer 120 having the catalyst particles 122 to the high density interconnect line. The scope of application. 2A to 2H illustrate a circuit board process according to another embodiment of the present invention. Referring first to FIG. 2A, in accordance with the circuit board process of the present embodiment, a line substrate 210 is first provided. The circuit substrate 210 has an upper surface 212 and a first line pattern 214' wherein the first line pattern 214 is located on the upper surface 212, that is, the first line pattern 214 can be regarded as a general [15 1361645. 0809003 29453twf.doc /n line (ie non-embedded line). It is worth mentioning that the structure of the wiring substrate 210 may have only a single wiring layer ' or a multilayer wiring layer. That is, the wiring substrate 210 may be a single-layer wiring substrate, a two-layer wiring substrate, or a multilayer wiring substrate. In the present embodiment, the wiring substrate 210 of FIG. 2A is described as a multilayer wiring substrate formed by alternately stacking a plurality of dielectric layers (not shown) and a plurality of patterned wiring layers (not shown).

Referring to FIG. 2B, a dielectric layer 22 is formed over the wiring substrate, wherein the dielectric layer 220 covers the first surface pattern 214 of the upper surface 212 of the wiring substrate 210. In detail, in the present embodiment, the dielectric layer 22 includes a plurality of catalyst particles, and the catalyst particles are the same as those in the foregoing embodiment, and the details are not repeated herein. Of course, the material of the dielectric layer 212 may be a high molecular polymer. Referring to FIG. 2C 'then, forming a steel bar 24G in the dielectric layer 220, in the embodiment, the steel box layer 24g covers the dielectric layer, and the core is formed, and then the copper box layer is formed. Dielectric of 240 to the first shot U to form at least - an rc blind hole structure extending from the copper button 240 - the upper surface m2 blind hole structure B2 is exposed to the portion of the line substrate 2 Line pattern 2M. In the too w laser L1 can also be 4 = : ; in his embodiment, the first line of laser light source. ' " ', excimer laser source or far 1361645 0809003 29453twf.d〇c / n clear reference ® 2E ' then 'filled in a conductive material 25 〇 in the blind hole structure B2 to form a conductive structure no, which is conductive The surface of the structure no is substantially aligned with the surface of the copper falling layer 240. In this embodiment, the manner of filling the conductive material 250 in the mesh structure B2 includes printing, and the conductive material includes a metal conductive paste or a polymer conductive material, wherein the metal conductive paste can be 2, carbon glue, copper paste, silver. A paste, solder paste, or other metal material suitable for conducting electricity. In the case of Lei materials, the polymer conductive material includes a composite polymer 曰^^: Weishang molecular conductive material. The composite polymer conductive material sub-material and each residual material are obtained by filling, compounding, and the like, and the composite polymer conductive material is described as including conductive plastic, conductive rubber, conductive paint or Conductive adhesive can even be made into a transparent conductive film. The performance of the second material is the same as that of the selected lead-type 口 埴 同 / 刀 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及The conductivity has a great relationship 'where carbon fiber etc. The other 'two A powder, metal box sheet' metal fiber, itself or molecular guide material refers to the polymer material with conductive function after the polymer structure, in the pot: polystyrene includes: poly-b-block material, polynitridation Sulfur, an electronically conductive structure-structured polymer conductive material (4) The structure of the conductive polymer (4) (4), whose f-electron system passes under the action of heat or first [S] 17 1361645 0809003 29453twf.doc/n Electricity, conductance The rate is generally in the conductivity of the semi-materials _ ancient & 'and doping technology can make this iodine, the conductivity can be increased by 12 = for example, doping a small amount of sulphur in the poly-b-block, at ultra-low temperature In turn, for example, the surface of the polysilicon layer after the doping of the Zhao, which exposes the dielectric surface. The surface of the surface returning to the dielectric layer 220 is followed by a second laser L2 at a dielectric sound 220 w concave (four) case 226, where _ _ move "t ^ , 230 phase connection 1 is, in this embodiment When the second Thunder erosion has a recessed pattern formed on the interfacial surface of the catalyst particles 222: 层:: When the dielectric layer 220 is 冋, some of the catalyst particles 222 are activated. The agarite is exposed on the inner surface of the intaglio pattern 226 to form an activating layer. The catalyst particles in Fig. 2G will indicate whether the catalyst particles 222 are activated in black or white. The black catalyst particles 222 represent Activated catalyst particles 222 (ie, activation layer 224), while white catalyst particles represent unactivated catalyst particles 222. In this embodiment 'second laser L2 is an ultraviolet laser source. In other implementations For example, the second laser L2 may also be an infrared laser light source, a quasi-molecular laser light source or a far-infrared laser light source. Referring to FIG. 2H, finally, a conductive material is disposed in the concave pattern 226 to form a second a line pattern 260, wherein the second line pattern 26 is electrically connected to the first through the conductive structure 230 The line pattern 214. In the present embodiment, the method of forming the second line pattern 260 in the recess pattern 226 includes a chemical deposition method. Further, the second line pattern 260 is by 1361645. 0809003 29453twf.doc/n chemistry A deposition method is formed on the active layer 224 in the recessed pattern 226, and the second line patterns 260 are substantially aligned with the surface of the dielectric layer 220. In other words, the second line patterns 260 are substantially internal. The buried circuit 200 has been substantially completed. In short, the circuit board process of the present embodiment is to first form a conductive connection of the first line pattern 214 of the connection line substrate 210 to the dielectric layer 220 by means of printing. Structure 230, then forming a recessed pattern 226 with a second laser on the surface of the dielectric layer 22, and then forming a second line pattern 260 embedded in the recessed pattern 226 by chemical deposition. The second circuit pattern 260 is electrically connected to the first line pattern 214 ′ by the conductive structure 230 to complete the circuit board 2 具有 having a high density interconnection. The circuit board process of the embodiment can be avoided. The limitation of the hole filling capability of the second line pattern 260 and the conductive structure 2304 and the long processing time are simultaneously formed in the recessed pattern 226 and the blind via structure B2. Further, the dielectric layer of the embodiment 220 has a plurality of catalyst particles 222, and while the first laser L2 is irradiated on the surface of the dielectric layer 220, part of the catalyst particles 222 are activated to form the active layer 224, so that the chemical deposition method can be directly used. The second line pattern 260 is formed on the active layer 224 in the recess pattern 226, which in turn expands the range of applications of the dielectric layer 220 having the catalyst particles 222 on the high density interconnect wiring board 200. 3A to 3E illustrate a circuit board process according to another embodiment of the present invention. Referring first to FIG. 3A', in accordance with the circuit board process of the present embodiment, first, a wiring substrate 310 is provided. The wiring substrate 310 has an upper surface μ and a 1361645 0S09003 29453 twf.doc/n a first line pattern 314 'where the first line pattern 314 is located on the upper surface 312, that is, the first line pattern 314 can be regarded as a general Line (ie non-embedded line). It is worth mentioning that the structure of the wiring substrate 310 may have only a single wiring layer or a multilayer wiring layer. That is, the wiring substrate 31〇 may be a single-layer wiring substrate, a two-layer wiring substrate, or a multilayer wiring substrate. In the present embodiment, the wiring substrate 310 of FIG. 3A is described by a plurality of dielectric layers (not shown) and a plurality of patterned wiring layers (not shown) alternately stacked to form a multilayer wiring substrate. Referring to FIG. 3B, a conductive cone 330 is formed on the first line pattern 314. In this embodiment, the method of forming the conductive cone 330 includes printing or wire bonding, and the material of the conductive cone 330' includes copper or silver glue. Referring to FIG. 3C', a dielectric layer 320 is then pressed onto the wiring substrate 310, wherein the conductive cone 330' extends through the dielectric layer 320 to form the conductive structure 330. In detail, since the conductive cone 330 has a relatively high hardness, when the dielectric layer 320 is pressed onto the circuit substrate 310, the luminescent end of the conductive cone 330 penetrates through the dielectric layer 320, and the tip of the conductive cone 3.30' The flat structure formed by the press-forming constitutes the conductive structure 330 buried in the dielectric layer 320. In this embodiment, the dielectric layer 320 includes a plurality of catalyst particles 322, and the catalyst particles 322 are the same as the catalyst particles 122 or the catalyst particles 222 in the foregoing embodiment, and the details are not described herein. Of course, in other embodiments, the material of the dielectric layer 320 may also be a high molecular polymer. Referring to FIG. 3D, then a recessed pattern 326 ' is formed on the surface of the dielectric layer 320 by a second laser L2. The recessed pattern 326 and the conductive junction [ si 20 1361645 0809003 29453tNvf.d〇c/n • 330 connected. In particular, in the present embodiment, when the second laser L2' ablates the dielectric layer 32B having the catalyst particles 322, while forming the intaglio pattern 326 on the surface of the dielectric layer 32A, some The catalyst particles are activated and exposed to the inner face of the intaglio pattern 326 to form an active layer 324A. These catalyst particles 322 of Figure 3D indicate the catalyst in black or white. • Age 322 is activated. The black catalyst particles 322 represent the activated catalyst particles 322 (i.e., the activation layer 324), while the white catalyst particles 322 represent the unactivated catalyst particles 322. In the present embodiment, the second laser £2 is an ultraviolet laser light source. In other embodiments, the second laser L2 may also be an infrared laser source, a quasi-molecular laser source, or a far-infrared laser source. Referring to FIG. 3E, finally, a conductive material is disposed in the recess pattern 326 to form a first line pattern 340, wherein the second line pattern is electrically connected to the first line pattern 314 by the conductive structure 330. The method of forming the second line pattern 340 in the intaglio pattern 326 in the present embodiment includes a chemical deposition method. Further, the second line pattern 34 is formed on the active layer 324 in the recess pattern 326 by a chemical deposition method, and the second line pattern 340 is substantially aligned with the surface of the dielectric layer 320. In other words, these second line patterns 340 can basically be regarded as a buried line. At this point, the circuit board 300 has been substantially completed. In short, the circuit board process of the present embodiment first forms a conductive cone 330' on the first line pattern 314 of the circuit substrate 310 by means of printing or wire bonding, and then 'presss the dielectric layer 320 on the circuit substrate. After forming the conductive structure 330', the recessed pattern 326 is formed on the surface of the dielectric layer 320 by the first laser L2, and finally, the buried layer is formed by chemical deposition. 21 1361645 » » 0809003 29453twf.doc /n - a second line pattern 340 in the recess pattern 326, wherein the second line pattern 340 is electrically connected to the first line pattern 314 by the conductive structure 330 to complete the wiring board 3 having the high density interconnection. Hey. The circuit board process of the embodiment can avoid the limitation of the blind hole filling ability and the long process time. In addition, the dielectric layer 320 of the present embodiment has a plurality of catalyst particles 322. When the second laser L2 is irradiated on the surface of the dielectric layer 320, part of the catalyst particles 322 are activated to form the active layer 324. Therefore, the second line pattern 34〇 can be formed directly on the active layer 324 in the recess pattern 326 by chemical deposition, thereby further expanding the line of the dielectric layer 32G having the catalyst particles 322 in the high-density interconnect. The range of applications on the board 300. In summary, the present invention forms a conductive structure of a *7 line pattern connecting the wiring substrate prior to the dielectric layer, and forms an intaglio pattern embedding the second line pattern on the surface of the dielectric layer by laser. The second line pattern is electrically connected to the first line pattern by the conductive structure, and the Wei board having the high density of 7 lines is completed. Therefore, the a-type circuit board process of the present invention can avoid the problem of limiting the hole filling ability and the long processing time when the second line pattern and the conductive structure are simultaneously formed in the recessed pattern and the blind hole structure. This further expands the range of applications for circuit boards with high-density interconnects. The present invention has been disclosed in the above embodiments, but it is not intended to limit the scope of the present invention. Anyone having ordinary knowledge in the art can make a few changes without departing from the spirit and scope of the present invention. ί (10), the scope of protection of the present invention is defined by the scope of the appended claims. 1361645 0809003 29453twf.doc/n [Simplified Schematic] FIG. 1A to FIG. II illustrate a circuit board process according to an embodiment of the present invention. 2A to 2H illustrate a circuit board process according to another embodiment of the present invention. 3A to 3E illustrate a circuit board process according to another embodiment of the present invention. - [Major component symbol description] 100, 200, 300: circuit board 110, 210, 310: wiring substrate 112, 212, 312: upper surface 114, 214, 314: first wiring pattern 120, 220, 320: dielectric Layers 122, 222, 322: catalyst particles 124, 224, 324: activation layers 126, 226, 326: intaglio patterns 130, 230, 330 · conductive structures 140, 240: copper foil layer 150: electric ore seed layer 160 : Conductive layer 170, 260, 340: second line pattern 250: conductive material 330': conductive cone

Bl, B2: blind U-shaped L1: first laser L2: second laser [S] 23

Claims (1)

100-10-28 X. Patent application scope: 1 A circuit board process, comprising: providing a circuit substrate, the circuit substrate having a circuit diagram, the upper surface of the cymbal cymbal ^ and a first opening ^ ; Γ ί pattern Located on the upper surface; forming a dielectric layer having a conductive structure covering the upper surface and the first line pattern on the C layer, wherein the dielectric layer is electrically connected to the first line, ,,. Constructive Including a plurality of catalyst particles; wherein the dielectric layer is on the surface of the dielectric layer, wherein the recessed pattern is the same i = and the surface is formed on the surface of the dielectric layer a concave-active layer=the portion of the catalyst particles to form an ancient layer on the inner surface of the intaglio pattern; and a pattern in which the material is formed to form a second line red line pattern The conductive structure is electrically connected to the second I • The circuit board process as described in the scope of the patent application, wherein the method of forming = indenting comprises laser marking, electric engraving or machining. The circuit board process as described in claim 2, The machining process includes waterjet cutting, sand blasting or profile cutting. 4' The circuit board process of claim 2, wherein the laser source of the laser burns includes an ultraviolet laser, an infrared laser, a quasi-molecular field or a far-infrared laser. 5 > • According to the circuit board process described in item 1 of the patent application, the 24 1361645. 哝 〇 〇 β 日 日 ( 东 东 东 东 东 100 100 -10- -10- -10- -10- -10- -10- -10- -10- -10- -10- -10- polymer. 6. The circuit board process of claim 5, wherein the polymer is selected from the group consisting of epoxy resins, modified epoxy resins, polyesters, acrylates, fluoropolymers, polyphenylenes. Base oxide, polyimine, phenolic resin, polysulfone, lycopene polymer, enamel resin, cyanate polyester, polyethylene, polycarbonate resin, propylene-butadiene-styrene copolymer, poly Composition of terephthalic acid ethylene glycol resin, polybutylene terephthalate resin, liquid crystal polymer, polystyrene 6, nylon, copolymerized polyacetal, polyphenylene sulfide and cyclic olefin copolymerization rfj Group. 7. The circuit board process of claim 1, wherein the catalyst particles comprise a plurality of nano metal particles. 8. The circuit board process of claim 1, wherein the material of the catalyst particles comprises a plurality of transition metal coordination compounds. 9. The circuit board process of claim 8, wherein the transition metal coordination compound comprises a transition metal oxide, a transition metal nitride, a transition metal complex or a transition metal chelate. #10. The circuit board process of claim 9, wherein the transition metal coordination compound is selected from the group consisting of zinc, copper, silver, gold, nickel, palladium, platinum, cobalt, rhodium. Groups of tantalum, niobium, iron, manganese, chromium, molybdenum, tungsten, vanadium, knobs and titanium. 11. The circuit board process of claim 2, wherein the method of forming the second line pattern in the intaglio pattern comprises a chemical deposition method. 12. The circuit board process as described in the first application of the patent scope 'there is a replacement of the page 10〇-1〇-28 ~ 1 I _ _ t with the conductive structure The step of forming the dielectric layer includes: forming a steel foil layer on a surface of the dielectric layer; less than ^> the dielectric layer having the domain layer is irradiated with H to form a copper layer extending to y 1 a blind hole structure to the first-line pattern; surface-opening V into a plating seed layer in the blind hole structure and the surface of the copper foil layer, the plating seed layer is plated to form a conductive layer; and The conductive layer, a portion of the electroplated seed layer and the steel are expanded to form the conductive structure and expose the surface of the dielectric layer.丨 3. The circuit board process described in claim 12, wherein the material of the conductive layer comprises copper, silver, nickel, tin or Ming. 14. The circuit board process of claim 12, wherein the adjacent conductive layer, a portion of the plating seed layer, and the copper foil layer include a residue or a grinding. 15. The circuit board according to claim 1, wherein the step of forming the dielectric layer having the conductive structure comprises: opening a steel foil layer on a surface of the dielectric layer; Small/disposing a laser layer on the dielectric layer on which the copper foil layer is formed to form a blind hole structure extending to the first line pattern to the matte layer; filling the conductive material in the blind via structure Forming the conductive structure; and removing the copper foil layer to expose the surface of the dielectric layer. _ 16. The circuit board process as claimed in claim 15, wherein the laser source comprises an infrared laser source, an ultraviolet laser source, a quasi-26 β year, a 丨*9月4曰修(矣j正Replace the 贞1 °〇-1〇-28 molecular laser source or the far-infrared laser source. 17. For the circuit board process described in claim 15 of the patent application, the conductive material includes a metal conductive paste or a polymer conductive 18. The circuit board process as described in claim 17 of the patent application, wherein the metal conductive paste comprises copper glue, silver glue, carbon glue, copper paste, silver paste or solder paste. The circuit board process of claim 17, wherein the polymer conductive material comprises a composite bismuth polymer conductive material or a structural type molecular conductive material. 巧20. The circuit board process according to claim 19, wherein the composite The polymer conductive material is obtained by laminating a conductive material in a manner of filling a composite, surface recombination or lamination, etc. 21. The circuit board process according to claim 20, wherein the composite type is high molecule The material of the electrical material includes a plastic, a rubber, a resin coating or an adhesive. 22. The circuit board process of claim 20, wherein the conductive filler comprises carbon black, metal powder, metal foil, metal fiber. Or a fiber. The circuit board process of claim 19, wherein the structural polymer conductive material comprises polyacetylene material, polysulfurnitride, polypyrrole, polyphenylene sulfide, polyfluorene. The circuit board process of claim 1, wherein the step of forming the dielectric layer having the conductive structure comprises: forming a conductive cone On the first line pattern; and 1361645 • · 1<? 0 year month anvil day repair (3⁄4) stop replacement f 100-10-28 press the dielectric layer on the circuit substrate, wherein the conductive cone runs through the medium An electric layer to form the electrically conductive structure. 25. The circuit board process of claim 24, wherein the method of forming the electrically conductive cone comprises printing or wire bonding. 26. The circuit of claim 24 Board system , Wherein the conductive material comprises a cone silver paste or copper paste. 28