TW200943579A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereofInfo
- Publication number
- TW200943579A TW200943579A TW97111940A TW97111940A TW200943579A TW 200943579 A TW200943579 A TW 200943579A TW 97111940 A TW97111940 A TW 97111940A TW 97111940 A TW97111940 A TW 97111940A TW 200943579 A TW200943579 A TW 200943579A
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- electrode
- semiconductor layer
- light emitting
- emitting diode
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003989 dielectric material Substances 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 abstract 1
- 238000005286 illumination Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Landscapes
- Led Devices (AREA)
Abstract
This invention relates to a light emitting diode and a manufacturing method thereof, the light emitting diode including a substrate, and a first type (or P type) semiconductor layer, an active layer, and a second type (or N type) semiconductor layer stacked on the substrate in sequence. A trough penetrates from the second type semiconductor layer to the first type semiconductor layer. The first type (or P type) electrode is equipped on the trough and contacts with the first type semiconductor layer. The second type (or N type) electrode is equipped on and contacts with the second type semiconductor layer; a dielectric material layer is equipped in the trough and located on the top of the first electrode to isolate the first type electrode and the second electrode. The first electrode is formed in mesh, and the second type electrode is formed in comb shape or has annular sub-electrodes. This invention, when compared with conventional technologies, is capable of increasing the uniformity of the light and the illumination efficiency, and preventing the damage on the LED when the first type or second type electrode is broken, without increasing the complexity of fabrication process and the technological difficulties.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97111940A TWI427822B (en) | 2008-04-02 | 2008-04-02 | Light emitting diode and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW97111940A TWI427822B (en) | 2008-04-02 | 2008-04-02 | Light emitting diode and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200943579A true TW200943579A (en) | 2009-10-16 |
| TWI427822B TWI427822B (en) | 2014-02-21 |
Family
ID=44869051
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW97111940A TWI427822B (en) | 2008-04-02 | 2008-04-02 | Light emitting diode and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI427822B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103227261A (en) * | 2013-04-26 | 2013-07-31 | 东莞市福地电子材料有限公司 | Led flip chip |
| TWI427829B (en) * | 2010-07-26 | 2014-02-21 | Epistar Corp | Semiconductor photoelectric element and manufacturing method thereof |
| TWI456796B (en) * | 2009-12-04 | 2014-10-11 | Toyoda Gosei Kk | Semiconductor light-emitting element, electronic device, and light-emitting device |
| US8896012B2 (en) | 2010-08-26 | 2014-11-25 | Huga Optotech, Inc. | Light emitting diode |
| US12183848B2 (en) | 2016-01-13 | 2024-12-31 | Seoul Viosys Co., Ltd. | Light emitting device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI238548B (en) * | 2002-11-08 | 2005-08-21 | United Epitaxy Co Ltd | Light emitting diode and method of making the same |
| KR101113878B1 (en) * | 2006-06-23 | 2012-03-09 | 엘지이노텍 주식회사 | Light emitting diode having vertical topology and method of making the same |
-
2008
- 2008-04-02 TW TW97111940A patent/TWI427822B/en not_active IP Right Cessation
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI456796B (en) * | 2009-12-04 | 2014-10-11 | Toyoda Gosei Kk | Semiconductor light-emitting element, electronic device, and light-emitting device |
| TWI427829B (en) * | 2010-07-26 | 2014-02-21 | Epistar Corp | Semiconductor photoelectric element and manufacturing method thereof |
| US8809881B2 (en) | 2010-07-26 | 2014-08-19 | Epistar Corporation | Light-emitting device |
| US9293634B2 (en) | 2010-07-26 | 2016-03-22 | Epistar Corporation | Method of manufacturing semiconductor optoelectronic device |
| US8896012B2 (en) | 2010-08-26 | 2014-11-25 | Huga Optotech, Inc. | Light emitting diode |
| CN103227261A (en) * | 2013-04-26 | 2013-07-31 | 东莞市福地电子材料有限公司 | Led flip chip |
| CN103227261B (en) * | 2013-04-26 | 2015-10-07 | 东莞市福地电子材料有限公司 | Led flip chip |
| US12183848B2 (en) | 2016-01-13 | 2024-12-31 | Seoul Viosys Co., Ltd. | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI427822B (en) | 2014-02-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI479693B (en) | Light emitting device and method of manufacturing same | |
| US10158043B2 (en) | Light-emitting diode and method for manufacturing the same | |
| TWI396307B (en) | Light-emitting diode | |
| US9337406B2 (en) | GaN-based light emitting diode with current spreading structure | |
| TW200739957A (en) | Manufacturing method of nitride semiconductor light-emitting element | |
| CN103378233B (en) | LED crystal particle and use the package structure for LED of this crystal grain | |
| TW200733432A (en) | Light emitting diode with ITO layer and method for fabricating the same | |
| KR20080027555A (en) | Method of manufacturing nitride semiconductor light emitting device and nitride semiconductor light emitting device | |
| WO2009120044A3 (en) | Light-emitting element and a production method therefor | |
| TW200717863A (en) | Gallium nitride-based compound semiconductor light-emitting device | |
| WO2010150114A3 (en) | Contact for a semiconductor light emitting device | |
| US20120241724A1 (en) | Light emitting chip | |
| TW200943579A (en) | Light emitting diode and manufacturing method thereof | |
| WO2019067182A3 (en) | Mesa shaped micro light emitting diode with bottom n-contact | |
| CN103022308A (en) | Light-emitting diode grain and manufacturing method thereof | |
| KR20150010146A (en) | Light emitting device and lighting system | |
| US20140001434A1 (en) | Light emitting diode structure and manufacturing method thereof | |
| CN102214743A (en) | Method for manufacturing current blocking layer of gallium nitride-based light-emitting diode (LED) | |
| TWI479686B (en) | Light-emitting diode | |
| TW200633275A (en) | Semiconductor light emitting diode and method of manufacturing same | |
| TW200507260A (en) | A semiconductor device and method for fabricating the same | |
| US20130341591A1 (en) | Light emitting diode structure and manufacturing method thereof | |
| JP2019102445A (en) | OLED panel for lighting device and method of manufacturing the same | |
| TW200711163A (en) | Light emitting diode and fabricating method thereof | |
| IN2015KN00390A (en) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |