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TW200801815A - Method for forming pattern and composition for forming organic thin film using therefor - Google Patents

Method for forming pattern and composition for forming organic thin film using therefor

Info

Publication number
TW200801815A
TW200801815A TW096122756A TW96122756A TW200801815A TW 200801815 A TW200801815 A TW 200801815A TW 096122756 A TW096122756 A TW 096122756A TW 96122756 A TW96122756 A TW 96122756A TW 200801815 A TW200801815 A TW 200801815A
Authority
TW
Taiwan
Prior art keywords
underlayer film
forming
organic thin
exposed
pattern
Prior art date
Application number
TW096122756A
Other languages
English (en)
Inventor
Daisuke Shimizu
Hikaru Sugita
Nobuji Matsumura
Toshiyuki Kai
Tsutomu Shimokawa
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200801815A publication Critical patent/TW200801815A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/14—Radicals substituted by singly bound hetero atoms other than halogen
    • C07D333/18—Radicals substituted by singly bound hetero atoms other than halogen by sulfur atoms
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Inorganic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW096122756A 2006-06-27 2007-06-23 Method for forming pattern and composition for forming organic thin film using therefor TW200801815A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006177034 2006-06-27
JP2006268671 2006-09-29

Publications (1)

Publication Number Publication Date
TW200801815A true TW200801815A (en) 2008-01-01

Family

ID=38845445

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096122756A TW200801815A (en) 2006-06-27 2007-06-23 Method for forming pattern and composition for forming organic thin film using therefor

Country Status (6)

Country Link
US (1) US8173348B2 (zh)
EP (1) EP2034364A4 (zh)
JP (1) JPWO2008001679A1 (zh)
KR (1) KR20090024246A (zh)
TW (1) TW200801815A (zh)
WO (1) WO2008001679A1 (zh)

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EP2048541A4 (en) * 2006-08-04 2010-12-01 Jsr Corp PROCESS FOR FORMING PATTERN, COMPOSITION FOR FORMING UPPER LAYER FILM, AND COMPOSITION FOR FORMING LOWER LAYER FILM
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
JP6035017B2 (ja) * 2010-10-04 2016-11-30 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
TW201344369A (zh) * 2012-03-07 2013-11-01 Jsr Corp 光阻下層膜形成用組成物及圖型之形成方法
JP6027758B2 (ja) * 2012-03-30 2016-11-16 東京応化工業株式会社 組成物及びパターン形成方法
JP6088843B2 (ja) * 2013-02-20 2017-03-01 東京応化工業株式会社 パターン形成方法
KR20140120212A (ko) * 2013-04-02 2014-10-13 주식회사 동진쎄미켐 미세패턴 형성용 코팅 조성물 및 이를 이용한 미세패턴 형성방법
JP6480691B2 (ja) * 2013-10-21 2019-03-13 アーゼッド・エレクトロニック・マテリアルズ（ルクセンブルグ）ソシエテ・ア・レスポンサビリテ・リミテ ケイ素含有熱または光硬化性組成物
JP7587984B2 (ja) * 2018-03-19 2024-11-21 日産化学株式会社 保護されたフェノール基と硝酸を含むシリコン含有レジスト下層膜形成組成物
US12099301B2 (en) * 2020-05-22 2024-09-24 Taiwan Semiconductor Manufacturing Co., Ltd. Underlayer composition and method of manufacturing a semiconductor device
TWI777569B (zh) * 2020-05-22 2022-09-11 台灣積體電路製造股份有限公司 底層組成物與半導體裝置的製造方法

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EP0249457B1 (en) 1986-06-12 1991-08-21 Matsushita Electric Industrial Co., Ltd. Method for formation of patterns
JPH04149441A (ja) 1990-10-12 1992-05-22 Mitsubishi Electric Corp パターン形成方法
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JP2005274594A (ja) * 2004-03-22 2005-10-06 Canon Inc 感光性樹脂組成物及びレジストパターンの形成方法
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EP1906239A3 (en) * 2006-09-29 2009-02-18 FUJIFILM Corporation Positive resist composition and pattern forming method using the same
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Also Published As

Publication number Publication date
EP2034364A1 (en) 2009-03-11
JPWO2008001679A1 (ja) 2009-11-26
US8173348B2 (en) 2012-05-08
WO2008001679A1 (fr) 2008-01-03
EP2034364A4 (en) 2010-12-01
US20100233635A1 (en) 2010-09-16
KR20090024246A (ko) 2009-03-06

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