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TW200736818A - Pattern forming method and phase shift mask manufacturing method - Google Patents

Pattern forming method and phase shift mask manufacturing method

Info

Publication number
TW200736818A
TW200736818A TW096105380A TW96105380A TW200736818A TW 200736818 A TW200736818 A TW 200736818A TW 096105380 A TW096105380 A TW 096105380A TW 96105380 A TW96105380 A TW 96105380A TW 200736818 A TW200736818 A TW 200736818A
Authority
TW
Taiwan
Prior art keywords
light
shielding layer
phase shift
pattern forming
shift mask
Prior art date
Application number
TW096105380A
Other languages
English (en)
Other versions
TWI388922B (zh
Inventor
Hideki Suda
Original Assignee
Hoya Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp filed Critical Hoya Corp
Publication of TW200736818A publication Critical patent/TW200736818A/zh
Application granted granted Critical
Publication of TWI388922B publication Critical patent/TWI388922B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/72—Repair or correction of mask defects
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2218/00—Methods for coating glass
    • C03C2218/30—Aspects of methods for coating glass not covered above
    • C03C2218/32—After-treatment
    • C03C2218/328—Partly or completely removing a coating
    • C03C2218/33—Partly or completely removing a coating by etching

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW096105380A 2006-02-16 2007-02-14 圖案形成方法及相位移遮罩的製造方法 TWI388922B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006039222A JP4879603B2 (ja) 2006-02-16 2006-02-16 パターン形成方法及び位相シフトマスクの製造方法

Publications (2)

Publication Number Publication Date
TW200736818A true TW200736818A (en) 2007-10-01
TWI388922B TWI388922B (zh) 2013-03-11

Family

ID=38367276

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096105380A TWI388922B (zh) 2006-02-16 2007-02-14 圖案形成方法及相位移遮罩的製造方法

Country Status (4)

Country Link
US (1) US7846617B2 (zh)
JP (1) JP4879603B2 (zh)
KR (1) KR101004503B1 (zh)
TW (1) TWI388922B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100924332B1 (ko) * 2006-12-29 2009-11-02 주식회사 하이닉스반도체 포토마스크의 브리지 리페어 방법
KR100865560B1 (ko) * 2007-09-18 2008-10-28 주식회사 하이닉스반도체 포토마스크의 패턴 결함 수정 방법
JP2009117541A (ja) * 2007-11-05 2009-05-28 Tokyo Electron Ltd 基板検査方法、基板検査装置及び記憶媒体
US8968970B2 (en) * 2009-10-09 2015-03-03 Samsung Electronics Co., Ltd. Phase shift masks and methods of forming phase shift masks
US8715890B2 (en) 2012-01-31 2014-05-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor mask blanks with a compatible stop layer
JP2015219324A (ja) * 2014-05-15 2015-12-07 大日本印刷株式会社 フォトマスクの欠陥検査方法
CN106773522A (zh) * 2017-01-06 2017-05-31 无锡中微掩模电子有限公司 一种集成电路用相位移光掩模制造方法
US10845699B2 (en) * 2017-11-29 2020-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Method for forming photomask and photolithography method
CN108445707A (zh) * 2018-05-15 2018-08-24 睿力集成电路有限公司 相移掩模板、相移掩模光刻设备以及相移掩模板的制作方法
CN113860757B (zh) * 2021-09-30 2023-07-14 长沙韶光铬版有限公司 一种玻璃码盘的制作方法、玻璃码盘以及装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2710967B2 (ja) 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JPH0534897A (ja) * 1991-07-30 1993-02-12 Fujitsu Ltd 光学マスク及びその製造方法
JPH0934099A (ja) * 1995-07-25 1997-02-07 Hoya Corp 位相シフトマスク及びその製造方法
JP3630929B2 (ja) * 1997-07-18 2005-03-23 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクの製造方法
US6322935B1 (en) * 2000-02-28 2001-11-27 Metron Technology Method and apparatus for repairing an alternating phase shift mask
DE10131012C2 (de) * 2001-06-27 2003-06-26 Infineon Technologies Ag Verfahren zur Herstellung einer Phasenmaske
JP3650055B2 (ja) * 2001-10-12 2005-05-18 Ｈｏｙａ株式会社 ハーフトーン型位相シフトマスクの修正方法
DE10160458B4 (de) * 2001-11-30 2006-10-12 Infineon Technologies Ag Maske mit programmierten Defekten und Verfahren zu deren Herstellung
US7166392B2 (en) * 2002-03-01 2007-01-23 Hoya Corporation Halftone type phase shift mask blank and halftone type phase shift mask
US7005215B2 (en) * 2002-10-28 2006-02-28 Synopsys, Inc. Mask repair using multiple exposures
JP4443873B2 (ja) 2003-08-15 2010-03-31 Ｈｏｙａ株式会社 位相シフトマスクの製造方法
US7348106B2 (en) 2004-05-07 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Method for repairing a phase shift mask

Also Published As

Publication number Publication date
JP4879603B2 (ja) 2012-02-22
US7846617B2 (en) 2010-12-07
KR20070082572A (ko) 2007-08-21
TWI388922B (zh) 2013-03-11
JP2007219129A (ja) 2007-08-30
KR101004503B1 (ko) 2010-12-31
US20070187361A1 (en) 2007-08-16

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees
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