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TW200600999A - Common-drain junction field effect transistor device of single chip and its application - Google Patents

Common-drain junction field effect transistor device of single chip and its application

Info

Publication number
TW200600999A
TW200600999A TW093118436A TW93118436A TW200600999A TW 200600999 A TW200600999 A TW 200600999A TW 093118436 A TW093118436 A TW 093118436A TW 93118436 A TW93118436 A TW 93118436A TW 200600999 A TW200600999 A TW 200600999A
Authority
TW
Taiwan
Prior art keywords
field effect
junction field
effect transistor
drain
common
Prior art date
Application number
TW093118436A
Other languages
English (en)
Other versions
TWI256536B (en
Inventor
Liang-Pin Tai
Jing-Meng Liu
Hung-Der Su
Original Assignee
Richtek Techohnology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Richtek Techohnology Corp filed Critical Richtek Techohnology Corp
Priority to TW093118436A priority Critical patent/TWI256536B/zh
Priority to US11/165,028 priority patent/US7535032B2/en
Publication of TW200600999A publication Critical patent/TW200600999A/zh
Application granted granted Critical
Publication of TWI256536B publication Critical patent/TWI256536B/zh
Priority to US12/385,719 priority patent/US7838901B2/en
Priority to US12/385,717 priority patent/US7759695B2/en
Priority to US12/385,721 priority patent/US7838902B2/en
Priority to US12/385,720 priority patent/US7768033B2/en
Priority to US12/385,718 priority patent/US7838900B2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/87—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of PN-junction gate FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/202—FETs having static field-induced regions, e.g. static-induction transistors [SIT] or permeable base transistors [PBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs

Landscapes

  • Dc-Dc Converters (AREA)
  • Junction Field-Effect Transistors (AREA)
TW093118436A 2004-06-25 2004-06-25 Single-chip co-drain junction FET device, step-down converter, step-up converter, inversed converter, switching device, and DC-to-DC converter applying the same TWI256536B (en)

Priority Applications (7)

Application Number Priority Date Filing Date Title
TW093118436A TWI256536B (en) 2004-06-25 2004-06-25 Single-chip co-drain junction FET device, step-down converter, step-up converter, inversed converter, switching device, and DC-to-DC converter applying the same
US11/165,028 US7535032B2 (en) 2004-06-25 2005-06-24 Single-chip common-drain JFET device and its applications
US12/385,719 US7838901B2 (en) 2004-06-25 2009-04-17 Single-chip common-drain JFET device and its applications
US12/385,717 US7759695B2 (en) 2004-06-25 2009-04-17 Single-chip common-drain JFET device and its applications
US12/385,721 US7838902B2 (en) 2004-06-25 2009-04-17 Single-chip common-drain JFET device and its applications
US12/385,720 US7768033B2 (en) 2004-06-25 2009-04-17 Single-chip common-drain JFET device and its applications
US12/385,718 US7838900B2 (en) 2004-06-25 2009-04-17 Single-chip common-drain JFET device and its applications

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW093118436A TWI256536B (en) 2004-06-25 2004-06-25 Single-chip co-drain junction FET device, step-down converter, step-up converter, inversed converter, switching device, and DC-to-DC converter applying the same

Publications (2)

Publication Number Publication Date
TW200600999A true TW200600999A (en) 2006-01-01
TWI256536B TWI256536B (en) 2006-06-11

Family

ID=35504689

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118436A TWI256536B (en) 2004-06-25 2004-06-25 Single-chip co-drain junction FET device, step-down converter, step-up converter, inversed converter, switching device, and DC-to-DC converter applying the same

Country Status (2)

Country Link
US (6) US7535032B2 (zh)
TW (1) TWI256536B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101728389B (zh) * 2008-10-29 2014-01-29 飞思卡尔半导体公司 Buck降压转换器衬底噪声的被动消除方法
KR20120030411A (ko) * 2009-05-11 2012-03-28 에스에스 에스시 아이피, 엘엘시 증가형 및 공핍형 광대역 반도체 ｊｆｅｔ용 게이트 드라이버
US8228114B1 (en) * 2009-09-30 2012-07-24 Arkansas Power Electronics International, Inc. Normally-off D-mode driven direct drive cascode
EP2614588A1 (en) * 2010-09-10 2013-07-17 ST-Ericsson SA Controlled switch
EP2720362A1 (en) * 2012-10-12 2014-04-16 ST-Ericsson SA Independent output control for single-inductor, bipolar outputs, buck-boost converters
EP2720363A1 (en) * 2012-10-12 2014-04-16 ST-Ericsson SA Independent output control for single-inductor, bipolar outputs, buck-boost converters
CN104952937B (zh) * 2015-06-18 2018-02-06 贵州煜立电子科技有限公司 一种限流控制二极管的制作方法及结构
US9831783B2 (en) 2015-12-30 2017-11-28 International Business Machines Corporation Power converter using near-load output capacitance, direct inductor contact, and/or remote current sense
CN107785367B (zh) * 2016-08-31 2021-10-15 无锡华润上华科技有限公司 集成有耗尽型结型场效应晶体管的器件及其制造方法
WO2021257303A1 (en) * 2020-06-18 2021-12-23 Power Integrations, Inc. Auxiliary junction field effect transistors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5396085A (en) * 1993-12-28 1995-03-07 North Carolina State University Silicon carbide switching device with rectifying-gate
JP3216804B2 (ja) * 1998-01-06 2001-10-09 富士電機株式会社 炭化けい素縦形ｆｅｔの製造方法および炭化けい素縦形ｆｅｔ
US6551865B2 (en) * 2001-03-30 2003-04-22 Denso Corporation Silicon carbide semiconductor device and method of fabricating the same
JP4288907B2 (ja) * 2001-08-29 2009-07-01 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6777722B1 (en) * 2002-07-02 2004-08-17 Lovoltech, Inc. Method and structure for double dose gate in a JFET
US6933706B2 (en) * 2003-09-15 2005-08-23 Semiconductor Components Industries, Llc Method and circuit for optimizing power efficiency in a DC-DC converter
US20050067630A1 (en) * 2003-09-25 2005-03-31 Zhao Jian H. Vertical junction field effect power transistor
US7180105B2 (en) * 2004-02-09 2007-02-20 International Rectifier Corporation Normally off JFET

Also Published As

Publication number Publication date
US20090201078A1 (en) 2009-08-13
TWI256536B (en) 2006-06-11
US7838901B2 (en) 2010-11-23
US20050285158A1 (en) 2005-12-29
US7838902B2 (en) 2010-11-23
US7838900B2 (en) 2010-11-23
US7768033B2 (en) 2010-08-03
US7759695B2 (en) 2010-07-20
US20090206922A1 (en) 2009-08-20
US20090206921A1 (en) 2009-08-20
US20090237062A1 (en) 2009-09-24
US7535032B2 (en) 2009-05-19
US20090201079A1 (en) 2009-08-13

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees
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