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SE546618C2 - A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures - Google Patents

A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures

Info

Publication number
SE546618C2
SE546618C2 SE2330179A SE2330179A SE546618C2 SE 546618 C2 SE546618 C2 SE 546618C2 SE 2330179 A SE2330179 A SE 2330179A SE 2330179 A SE2330179 A SE 2330179A SE 546618 C2 SE546618 C2 SE 546618C2
Authority
SE
Sweden
Prior art keywords
photodetector
top surface
openings
metal
msm
Prior art date
Application number
SE2330179A
Other languages
Swedish (sv)
Other versions
SE2330179A1 (en
Inventor
Omid Habibpour
Original Assignee
irvision system AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by irvision system AB filed Critical irvision system AB
Priority to SE2330179A priority Critical patent/SE546618C2/en
Publication of SE2330179A1 publication Critical patent/SE2330179A1/en
Publication of SE546618C2 publication Critical patent/SE546618C2/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Light Receiving Elements (AREA)

Abstract

A metal-semiconductor-metal, MSM, photodetector (100) comprising: a silicon substrate (102) having a top surface (104); a plurality of openings (106) extending vertically into the silicon substrate from the top surface; wherein at least a portion of the openings have an increasing diameter with increasing distance from the top surface such that a light absorption structure (108) having a tapered end portion is suspended from the top surface of the silicon substrate; interdigitated metal electrodes (110) arranged on the top surface to form a cathode (118) and an anode (120) of the photodetector.

Claims (7)

Claims
1. A metal-semiconductor-metal, MSM, photodetector (100) comprising: a si|icon substrate (102) having a top surface (104); a plurality of openings (106) extending vertically into the si|icon substrate from the top surface; wherein at least a portion of the openings have an increasing diameter with increasing distance from the top surface such that a light absorption structure (108) having a tapered end portion is suspended from the top surface of the si|icon substrate; interdigitated metal electrodes (110) arranged on the top surface to form a cathode (118) and an anode (120) of the photodetector.
2. The MSM photodetector according to c|aim 1, wherein the light absorption structure comprises a first portion (116) extending from the top surface having substantially vertical side walls.
3. The MSM photodetector according to any one of the preceding claims, wherein the openings are cross-shaped.
4. The MSM photodetector according to any one of the preceding claims, wherein the openings have a width in the range of Å/4 - M2, where Å is the wavelength of light which the photodetector is configured to detect.
5. The MSM photodetector according to any one of the preceding claims, wherein a period of the openings is approximately Å - 2A.
6. The MSM photodetector according to c|aim 4 or 5, wherein A=800-980 nm.
7. The I\/|SI\/I photodetector according to any one of the preceding claims, wherein a unit cell of the photodetector comprises in the range of 6xto 12x12 openings.
SE2330179A 2023-04-24 2023-04-24 A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures SE546618C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SE2330179A SE546618C2 (en) 2023-04-24 2023-04-24 A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE2330179A SE546618C2 (en) 2023-04-24 2023-04-24 A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures

Publications (2)

Publication Number Publication Date
SE2330179A1 SE2330179A1 (en) 2024-10-25
SE546618C2 true SE546618C2 (en) 2025-01-02

Family

ID=93564003

Family Applications (1)

Application Number Title Priority Date Filing Date
SE2330179A SE546618C2 (en) 2023-04-24 2023-04-24 A silicon-based metal semiconductor-metal photodetector comprising suspended silicon structures

Country Status (1)

Country Link
SE (1) SE546618C2 (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8384179B2 (en) * 2010-07-13 2013-02-26 University Of Electronic Science And Technology Of China Black silicon based metal-semiconductor-metal photodetector
US8680639B1 (en) * 2011-10-21 2014-03-25 Applied Micro Circuits Corporation Photodetector with a bandwidth-tuned cell structure
KR20200014116A (en) * 2018-07-31 2020-02-10 주식회사 크레파스테크놀러지스 Photo-sensor with micro-structure
WO2022054188A1 (en) * 2020-09-10 2022-03-17 株式会社京都セミコンダクター Surface incidence-type semiconductor light-receiving element
EP4078685A1 (en) * 2019-12-20 2022-10-26 Solar Earth Technologies Ltd. Solar cell comprising photovoltaic lined optical cavity with customized optical fill, methods for manufacturing the same and solar panels comprising the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8384179B2 (en) * 2010-07-13 2013-02-26 University Of Electronic Science And Technology Of China Black silicon based metal-semiconductor-metal photodetector
US8680639B1 (en) * 2011-10-21 2014-03-25 Applied Micro Circuits Corporation Photodetector with a bandwidth-tuned cell structure
KR20200014116A (en) * 2018-07-31 2020-02-10 주식회사 크레파스테크놀러지스 Photo-sensor with micro-structure
EP4078685A1 (en) * 2019-12-20 2022-10-26 Solar Earth Technologies Ltd. Solar cell comprising photovoltaic lined optical cavity with customized optical fill, methods for manufacturing the same and solar panels comprising the same
WO2022054188A1 (en) * 2020-09-10 2022-03-17 株式会社京都セミコンダクター Surface incidence-type semiconductor light-receiving element

Also Published As

Publication number Publication date
SE2330179A1 (en) 2024-10-25

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