KR102783296B1 - Apparatus for processing substrate and method of processing substrate using the same - Google Patents

Abstract

A substrate processing apparatus and a substrate processing method capable of etching a substrate at a high speed, precisely, and uniformly by generating microwaves in various supply patterns are disclosed. The substrate processing apparatus according to an embodiment of the present invention may include a microwave heat processor that generates microwaves in a reaction chamber to transfer heat to a substrate. The microwave heat processor may include a plurality of microwave supplyers arranged along a circumferential direction of the process chamber in a peripheral area of a stage. The plurality of microwave supplyers may supply microwaves into the reaction chamber by switching between various microwave supply modes. The various microwave supply modes may be modes in which microwaves are supplied by a combination of different microwave supplyers.

Description

{APPARATUS FOR PROCESSING SUBSTRATE AND METHOD OF PROCESSING SUBSTRATE USING THE SAME}

The present invention relates to a substrate processing device and a substrate processing method, and more specifically, to a substrate processing device and a substrate processing method for processing a substrate using microwaves for high-speed heat treatment.

In general, semiconductors have been manufactured mainly based on planar FETs (field-effect transistors). As semiconductor line widths have been miniaturized to nanometers (nm) in accordance with various studies to increase semiconductor integration, the miniaturization method of reducing the channel length of transistors has reached its physical limit. This is because it is difficult to control charges within a small gate length, causing leakage current, and it is difficult to prevent charge leakage unless the thickness of the insulating layer is increased or the channel length is lengthened.

Recently, fin FETs have been developed in accordance with research to overcome the problems of planar FETs. Fin FETs have the advantage of improving the performance of the device and reducing leakage current by increasing the contact area between the gate and channel, with the source and drain being designed in the form of fins. As a result, the FET device can operate normally even if the gate and channel lengths are shortened.

However, as nano-level miniaturization becomes more advanced, the FinFET process also has limitations. To overcome the limitations of conventional FinFETs, GAA (gate all around) FETs, in which the drain and source are implemented with multiple silicon nanowires, have been developed, and recently, MBC (multi-bridge channel) FETs, in which the drain and source are implemented with multiple silicon nanosheets, have been developed. In the case of such GAA FETs and MBC FETs, a technology is required to precisely etch the areas between multiple silicon nanowires or between multiple silicon nanosheets. However, especially in the case of MBC FETs, there is a problem that it is very difficult to uniformly and precisely etch the narrow areas between silicon nanosheets. Accordingly, a new etching technology is required that can precisely etch the microscopic areas of semiconductors at high speed.

Meanwhile, atomic layer etching (ALE) is known as one of the high-precision etching methods, which etches a substrate in atomic layer units. Atomic layer etching is a method of etching a wafer to a target thickness by repeatedly performing an atomic layer etching cycle consisting of a modification process in which a gas or precursor such as chlorine, fluorine, or oxygen that can react with silicon, etc. of a wafer is supplied into a chamber so that the gas or precursor is adsorbed on the exposed surface of the wafer by self-limiting, a purging process in which precursors that are not adsorbed on the surface of the wafer are exhausted from the chamber, a removal process in which ions or radicals by heat treatment or plasma are collided with the wafer to remove (desorb) a layer adsorbed on the surface of the wafer (silicon layer combined with the gas or precursor), and a purging process in which residual gas in the chamber is exhausted.

ALE can uniformly etch the entire surface of a wafer by removing the surface of the wafer one layer at a time based on the self-control principle in which a gas or precursor is uniformly adsorbed on the surface of the wafer. It also has the advantage of being able to precisely etch a high aspect ratio because directional etching is possible in the removal process. In ALE treatment, the removal energy (e.g., ion energy by plasma) is a factor that affects the etching treatment per cycle.

When the appropriate ion energy is generated, the etching throughput per cycle of ALE can be maintained constant. However, if the ion energy is lower than the appropriate ion energy, residual adsorption layers remain due to incomplete removal of the gas or precursor adsorption layers. On the other hand, if the ion energy is higher than the appropriate ion energy, sputtering behavior may occur in which not only the gas or precursor adsorption layers but also the silicon layer of the wafer is partially removed. Therefore, it is important to maintain an appropriate range of ion energy in order to uniformly etch the wafer, and to this end, it is necessary to perform the modification/reformation process and the removal process at an appropriate range of process temperatures.

In the ALE process, the adsorption process temperature at which the adsorption reaction of the modification/reformation process can proceed smoothly and the desorption process temperature at which the desorption reaction of the removal process can proceed smoothly are usually different. Therefore, when the process temperature within the chamber is maintained constant, the adsorption reaction and desorption reaction cannot be smoothly performed simultaneously, so in order to perform an efficient ALE process, it is necessary to control the process temperatures at which the modification/reformation process and the removal process are performed.

The heat treatment methods in the ALE process include methods using a heat generating heater, infrared lamp, flash lamp, laser, electron beam, microwave, etc. Here, three types of equipment configuration methods for heat treatment in the ALE process can be considered. The first method is a method in which heat treatment is performed using a heater provided on a stage that supports a wafer in a single chamber, the second method is a method in which heat treatment is performed while moving the wafer between dual chambers (a chamber for the modification/reformation process and a chamber for the removal process), and the third method is a method in which the temperature is controlled using a high-speed heat source in a single chamber.

The first method has the advantage that the process is performed in the same reactor, so there is no need to move the wafer between chambers. However, since modification and etching are performed at the same temperature, if the heat treatment temperature is designed considering the adsorption reaction, the etching reaction is slow and the overall process processing is slow. The second method has the advantage that the adsorption reaction can be performed at a low temperature in the modification/modification process chamber and the desorption reaction can be performed at a high temperature in the removal process chamber, so that the etching reaction is fast. However, since the wafer must be moved between the modification/modification process chamber and the removal process chamber for each cycle, there is a disadvantage that the overall process processing is slow.

The third method is a method that performs the modification/reformation process and the removal process while controlling the process temperature at high speed with a high-speed heat source such as a laser within the same reactor. This method has various advantages: there is no need to move the wafer between chambers, the etching reaction can be performed quickly, and the process processing can be performed at high speed. However, since the current technology has limitations in uniformly applying heat to the entire surface of the wafer by a laser, there are restrictions on the size of the wafer to which it can be applied.

Meanwhile, a technology utilizing microwaves is known as a method for controlling the heat treatment temperature of a process chamber. Conventional microwave-based heat treatment methods have the advantage of being able to perform heat treatment at high speeds by microwaves, but there is a problem that microwaves are unevenly transmitted to the wafer depending on the design position of the waveguide where the microwaves are generated, making uniform treatment impossible. To solve this problem, there is a technology for generating microwaves while rotating a microwave generating device or waveguide.

A rotary microwave generator of this type has the advantage of being able to transmit microwaves uniformly in the circumferential direction of the wafer, but it has limitations in that it cannot transmit microwaves uniformly in the radial direction of the wafer and it cannot diversely control the transmission of microwaves transmitted to each area of the wafer. In addition, a rotary microwave generator has the disadvantage of requiring a separate mechanical drive device, which increases equipment costs and maintenance/repair costs.

The present invention provides a substrate processing device and a substrate processing method capable of etching a substrate precisely and uniformly at high speed by generating microwaves in various supply patterns.

In addition, the present invention is to provide a substrate processing device and a substrate processing method capable of preventing unevenness in substrate processing due to interference of microwaves and uniformly etching a substrate.

In addition, the present invention provides a substrate processing device and a substrate processing method that can further improve the substrate processing speed by improving the shape of the process chamber to focus microwaves on the substrate and optimize the reflection reaction.

In addition, the present invention provides a substrate processing device and a substrate processing method capable of more efficiently supplying heat to a substrate by providing a susceptor that generates heat by microwaves on a stage that supports the substrate.

In addition, the present invention provides a substrate processing device and a substrate processing method capable of effectively preventing particles from attaching to the inner wall of a process chamber by providing a susceptor that generates heat by microwaves in the process chamber.

The technical problems to be achieved in the present invention are not limited to the technical problems mentioned above. Other technical problems not mentioned will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

A substrate processing apparatus according to an embodiment of the present invention may include a first process chamber for performing a first process treatment on a substrate. The first process chamber may include a first reaction chamber; a first stage provided within the first reaction chamber to support the substrate; and a microwave heat processor provided to generate microwaves within the first reaction chamber to transfer heat to the substrate.

The microwave heat processor may include a plurality of microwave supply units arranged along a circumferential direction of the first process chamber in a peripheral area of the first stage. The plurality of microwave supply units may be arranged to supply microwaves into the first reaction chamber by switching between various microwave supply modes. The various microwave supply modes are modes in which microwaves are supplied into the first reaction chamber by combinations of different microwave supply units among the plurality of microwave supply units.

In one embodiment, the microwave heat processor may further include a controller that independently drives the plurality of microwave sources to control the microwave generation pattern of each microwave source.

In one embodiment, the controller can control the supply pattern of microwaves generated from the plurality of microwave sources in various combinations so as to uniformly transfer heat to the substrate.

In one embodiment, the time-series microwave supply pattern of the microwave supply may be preset or determined based on a temperature distribution of the substrate measured during the first process treatment.

In one embodiment, the various microwave supply modes may include at least two of a first supply mode for driving the plurality of microwave supply units simultaneously, a second supply mode for sequentially driving the plurality of microwave supply units in a chronological order, a third supply mode for driving a pair of oppositely positioned microwave supply units simultaneously and sequentially in a clockwise or counterclockwise direction, a fourth supply mode for driving a plurality of oppositely positioned pairs of microwave supply units simultaneously and sequentially in a clockwise or counterclockwise direction, a fifth supply mode for sequentially or collectively driving odd-numbered and even-numbered microwave supply units based on the arrangement in the circumferential direction, and a sixth supply mode for randomly or sequentially driving the plurality of microwave supply units simultaneously or sequentially.

In one embodiment, the plurality of microwave sources may be provided in an even number and arranged symmetrically about the substrate.

In one embodiment, at least two of the plurality of microwave sources can generate microwaves of different microwave frequencies.

In one embodiment, the substrate processing device may be provided as a dual chamber having a first process chamber in which a first process treatment is performed on the substrate at a first process temperature, a second process chamber in which a second process treatment, different from the first process treatment, is performed on the substrate at a second process temperature different from the first process temperature, and a substrate transfer device for transferring the substrate between the first process chamber and the second process chamber.

In one embodiment, the second process chamber may include a second reaction chamber, a second stage provided within the second reaction chamber to support the substrate, and a plasma treatment device that generates plasma within the second reaction chamber to perform plasma treatment on the substrate.

In one embodiment, the first process treatment may include at least one of a modification process during an atomic layer etching (ALE) process, an adsorption process during an ALE process, a removal process during an ALE process, a plasma deposition process during an atomic layer deposition (ALD) process, and a thermal curing process after an ALD process.

In one embodiment, the second process treatment may include at least one process different from the first process treatment, among a reforming process during an ALE process, an adsorption process during an ALE process, a removal process during an ALE process, a plasma deposition process during an ALD process, and a thermal curing process after the ALD process.

In one embodiment, a microwave reflection structure may be provided in a ring shape extending along the circumferential direction of the first reaction chamber to reflect microwaves generated by the microwave heat treatment device toward the substrate so that the substrate is heat treated at a high speed by the microwaves. The microwave reflection structure may include a curved reflection structure provided in at least a portion of an upper edge region and a lower edge region within the first reaction chamber.

In one embodiment, a microwave reflection structure may be provided in a ring shape extending along the circumferential direction of the first reaction chamber to reflect microwaves generated by the microwave heat treatment device toward the substrate so that the substrate is heat treated at high speed by the microwaves. The microwave reflection structure may include a reflection structure that is formed to protrude obliquely on at least a portion of an inner surface, an upper edge region, and a lower edge region of the first reaction chamber and has a reflection surface.

In one embodiment, the reflective surface of the reflective structure provided in the upper edge region or the lower edge region of the first reaction chamber may be provided to form an inclined angle of 15° to 60° with respect to the bottom surface or the horizontal plane of the first reaction chamber. The reflective surface of the reflective structure provided on the inner surface of the first reaction chamber may be provided to form an inclined angle of 15° to 60° with respect to the inner surface of the first reaction chamber.

In one embodiment, the cross-section of the reflective structure may be formed into a triangular shape, and the tip portion of the reflective structure may be designed to have a radius of curvature of 100 μm or more to prevent arcing.

In one embodiment, the reflective structures are provided in a plurality along the vertical direction, and at least two of the plurality of reflective structures may have their reflective surfaces designed with different inclination angles.

In one embodiment, the reflective surface of the upper reflective structure located on the upper side of the two or more reflective structures may have a gentler inclination angle than the reflective surface of the lower reflective structure located on the lower side than the upper reflective structure.

In one embodiment, the reflective structure may further include a reflective structure driving unit that moves the reflective structure up and down, moves it horizontally, or rotates it to adjust the position or direction of the reflective structure.

In one embodiment, the reflective structure driving unit can drive the reflective structure so that the reflective surface is arranged in a position or direction set according to the microwave supply mode of the plurality of microwave supply units.

In one embodiment, the first stage may include a stage body provided with a first heat treatment device; a susceptor provided on the stage body and configured to generate heat by microwaves generated by the microwave heat treatment device and transfer heat to the substrate; and a protective film covering the susceptor. The susceptor may include a metal film coated on ceramic or a carbon-based material.

In one embodiment, a susceptor may be provided on the inner wall surface of the first reaction chamber to generate heat by microwaves generated by the microwave heat processor and prevent particles or byproducts from being adsorbed on the inner wall surface of the first reaction chamber. The susceptor may include a heating layer including a carbon-based material coated on ceramic to generate heat by microwaves generated by the microwave heat processor, and a protective film covering the heating layer.

In one embodiment, the susceptor includes an upper wall susceptor provided on an upper wall of the first reaction chamber, a side wall susceptor provided on a side wall of the reaction chamber, and an exhaust susceptor provided on a wall around an exhaust portion, and the upper wall susceptor and the exhaust susceptor may be provided to have a higher temperature than the side wall susceptor.

In one embodiment, each microwave source of the microwave heat treatment device has a shutter that can be opened and closed by a controller, and the shutter can control the supply and blocking of microwaves from each microwave source.

In one embodiment, the substrate processing apparatus of the present invention may further include a heat treatment device driving unit that drives the microwave heat treatment device upward or downward, or moves or rotates the microwave heat treatment device in a horizontal direction.

In one embodiment, the heat treatment device driving unit can drive the microwave heat treatment device in a set position or direction according to the microwave supply mode of the plurality of microwave supply devices.

In one embodiment, the microwave heat processor may further include a central microwave source provided on top of the substrate supported on the first stage and configured to generate microwaves toward the substrate.

A substrate processing method according to an embodiment of the present invention may include a step of performing a first process treatment on a substrate by the first process chamber. The step of performing the first process treatment may include a step of supplying microwaves into the first reaction chamber while switching the plurality of microwave supply devices between various microwave supply modes.

According to an embodiment of the present invention, a substrate processing device and a substrate processing method capable of etching a substrate accurately and uniformly at high speed by generating microwaves in various supply patterns are provided.

In addition, according to an embodiment of the present invention, by controlling the supply pattern of microwaves, unevenness in substrate processing due to interference of microwaves can be prevented, and the substrate can be etched uniformly.

In addition, according to an embodiment of the present invention, the shape of the process chamber is improved to focus microwaves onto the substrate by the microwave reflective structure, thereby optimizing the reflection reaction, thereby further improving the substrate processing speed.

In addition, according to an embodiment of the present invention, a susceptor that generates heat by microwaves is provided on a stage that supports a substrate, so that heat can be supplied to the substrate more efficiently.

In addition, according to an embodiment of the present invention, a susceptor that generates heat by microwaves is provided in the process chamber, thereby effectively preventing particles from attaching to the inner wall of the process chamber.

The effects that can be obtained from the present invention are not limited to the effects mentioned above. Other effects that are not mentioned will be clearly understood by those skilled in the art to which the present invention belongs from the description below.

Figure 1 is a conceptual diagram illustrating a substrate processing device according to an embodiment of the present invention.
FIG. 2 is a schematic drawing of a microwave heat treatment device constituting a substrate treatment device according to an embodiment of the present invention.
FIG. 3 is a drawing showing a microwave heat treatment device constituting a substrate treatment device according to another embodiment of the present invention.
FIG. 4 is a drawing illustrating various combinations of microwave generation patterns of a plurality of microwave supply units constituting a substrate processing device according to an embodiment of the present invention.
FIG. 5 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
Figure 6 is a process flow diagram showing a series of process treatments performed by the substrate processing device illustrated in Figure 5 in chronological order.
FIGS. 7 to 10 are conceptual diagrams showing substrate processing devices according to further embodiments of the present invention.
Figure 11 is an enlarged view of part 'A' of Figure 9.
FIG. 12 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
Figure 13 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
Fig. 14 is a cross-sectional view of a stage constituting the substrate processing device illustrated in Fig. 13.
Figure 15 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
Figure 16 is an enlarged drawing of section 'B' of the substrate processing device illustrated in Figure 15.
Figure 17 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
FIG. 18 is a plan view of a substrate processing device according to the embodiment of FIG. 17.
FIG. 19 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention.
Figure 20 is a conceptual diagram illustrating a substrate processing device according to another embodiment of the present invention.

Hereinafter, embodiments of the present invention will be described in more detail with reference to the attached drawings. The embodiments of the present invention can be modified in various forms, and the scope of the present invention should not be construed as being limited to the embodiments below. The embodiments of the present invention are provided to more completely explain the present invention to those with average knowledge in the art. The shapes of elements in the drawings may be exaggerated to emphasize a clearer description.

The invention's composition for clearly solving the problem to be solved by the present invention will be described in detail with reference to the accompanying drawings based on a preferred embodiment of the present invention. When assigning reference numbers to components in the drawings, the same or corresponding reference numbers are assigned to the same components as possible even if they are in different drawings. When necessary, components in other drawings may be cited when describing the drawings.

In addition, when describing the present invention, if it is determined that a specific description of a related known configuration or function may obscure the gist of the present invention, a detailed description thereof may be omitted. When describing a component of the present invention, terms such as "first", "second", etc. may be used. These terms are only intended to distinguish the component from other components, and the nature, order, or sequence of the component is not limited by the terms.

FIG. 1 is a conceptual diagram illustrating a substrate processing device according to an embodiment of the present invention. The embodiment of FIG. 1 illustrates a substrate processing device (100) having a dual chamber. Referring to FIG. 1, the substrate processing device (100) may include a first process chamber (1100), a second process chamber (1200), and a substrate transfer device (1300) for transferring a substrate (10) between the first process chamber (1100) and the second process chamber (1200).

The first process chamber (1100) may be a process chamber that performs a first process treatment on a substrate (10). The substrate (10) processed by the substrate processing device (100) may include various substrates, such as wafers for manufacturing semiconductor devices such as DRAM, NAND flash memory, and CPU, display panels such as liquid crystal display (LCD) panels and organic light emitting diode (OLED) panels, masks, and glass substrates, but is not limited to the listed types of substrates.

The first process treatment performed in the first process chamber (1100) may be, for example, a removal process during an atomic layer etching (ALE) process, but may also include various processes requiring heat treatment.

For example, the first process chamber (1100) may be a reaction chamber in which a removal process for removing a layer adsorbed on the surface of a substrate is performed during an ALE process in which a cycle including a modification/reformation process, a purging process, a removal process, and a purging process is repeatedly performed.

The first process treatment performed in the first process chamber (1100) may be performed at a first process temperature. The first process temperature may be a process temperature that is optimized for the first process treatment (e.g., a removal process, etc.) of the substrate (10). The first process temperature may be set to a temperature at which the precursor can be effectively removed from the exposed surface layer of the substrate (10) depending on the type of material constituting the substrate (10), the type of precursor or gas, etc. The first process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range or a process temperature profile, or a statistical processing value (e.g., an average value) thereof.

The second process chamber (1200) may be a process chamber that performs a second process treatment on the substrate (10). The second process treatment may be a different process from the first process treatment. The second process treatment performed in the second process chamber (1200) may be performed at a second process temperature that is different from the first process temperature at which the first process treatment is performed. This is because the process temperature suitable for the second process treatment is different from the process temperature suitable for the first process treatment.

Accordingly, the first process chamber (1100) and the second process chamber (1200) can perform processing on the substrate (10) at different process temperatures. For example, the second process chamber (1200) can be a reaction chamber in which a modification/modification process for modifying the surface of the substrate (10) by plasma treatment is performed during the ALE process.

The second process temperature may be a process temperature that is optimized for the second process treatment (e.g., a modification/reformation process or an adsorption process) of the substrate (10). The second process temperature may be set according to the type of material constituting the substrate (10), the type of gas or precursor, etc. For example, when the second process treatment is an adsorption process, it may be set to a temperature at which an adsorption layer can be effectively adsorbed on the surface layer of the substrate (10). The second process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range or a process temperature profile, or a statistical processing value (e.g., an average value) thereof.

The first process chamber (1100) may include a first reaction chamber (1110), a first stage (1120), a first stage driver (1130), and a microwave heat processor (1140). The first reaction chamber (1110) may be configured to accommodate the first stage (1120), the first stage driver (1130), and the microwave heat processor (1140). Although not illustrated, the first reaction chamber (1110) may be provided with a gas supply (not illustrated) for supplying a first process gas such as a precursor or a gas, an exhaust device for performing a purging process for exhausting residual gas within the first reaction chamber (1110), and the like.

In one embodiment, the inner wall of the first reaction chamber (1110) may be provided as a liner. The liner may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc., but this is merely exemplary and may be composed of other materials or such materials coated on the surface. The first reaction chamber (1110) may include a first upper chamber (1111) and a first lower chamber (1112) provided below the first upper chamber (1111). The first upper chamber (1111) may be a chamber in which a first process treatment for the substrate (10) is performed. The first lower chamber (1112) may be provided below the first upper chamber (1111) to provide a space for lowering the first stage (1120). To reduce consumption of supply gas and to achieve a quick response, the upper and lower widths of the first upper chamber (1111) can be configured to be approximately 3 mm to 15 cm, and it is preferable to design it as thin as possible.

The first stage (1120) may be provided to support the substrate (10). The first stage (1120) may be provided with a first heat treatment device (1121). The first heat treatment device (1121) may serve to maintain the temperature of the substrate (10) uniformly. The first heat treatment device (1121) may control the temperature of each region of the substrate (for example, each region concentrically partitioned) by controlling the temperature or flow rate of a coolant (coolant), or may control the temperature of the substrate (10) uniformly by using another cooling method.

The first stage driving unit (1130) can drive the first stage (1120) upward and downward. When the first stage (1120) is lowered and the substrate (10) is transported through the first inlet/outlet (1310) by the substrate transport device (1300) and settled on the first stage (1120), the first stage driving unit (1130) can drive the first stage (1120) upward toward the first upper chamber (1111).

The first stage driving unit (1130) can drive the first stage (1120) downward toward the first lower chamber (1112) for subsequent second process processing after the first process processing is performed on the substrate (10). Thereafter, the substrate (10) supported on the first stage (1120) can be transferred to the second process chamber (1200) for performing the second process processing through the first inlet/outlet (1310) and the second inlet/outlet (1320) by the substrate transfer device (1300).

The microwave heat processor (1140) can generate microwaves within the first reaction chamber (1110) to transfer heat to the substrate for high-speed heat treatment. The microwave heat processor (1140) can perform high-speed heat treatment by generating microwaves for a set time (for example, about 0.1 seconds or more and 30 seconds or less). In one embodiment, the microwave heat processor (1140) can be configured to generate microwaves having a frequency of 2.45 GHz corresponding to the standard frequency of microwaves, but the frequency of the microwaves may be changed. The microwave heat processor (1140) will be described in more detail later with reference to FIG. 2, etc.

The second process chamber (1200) may include a second reaction chamber (1210), a second stage (1220), a second stage driver (1230), and a plasma processor (1240). The second reaction chamber (1210) may be configured to accommodate the second stage (1220), the second stage driver (1230), and the plasma processor (1240). Although not illustrated, the second reaction chamber (1210) may be provided with a gas supply (not illustrated) for supplying a second process gas for plasma generation, an exhaust device for performing a purging process for exhausting residual gas within the second reaction chamber (1210), and the like.

In one embodiment, the second reaction chamber (1210) may include a second upper chamber (1211) and a second lower chamber (1212) provided below the second upper chamber (1211). The second upper chamber (1211) may be a chamber in which a second process treatment for the substrate (10) is performed. The second lower chamber (1212) may be provided below the second upper chamber (1211) to provide a space for lowering the second stage (1220). In order to reduce the consumption of the supply gas and achieve a fast reaction, the upper and lower widths of the second upper chamber (1211) may be configured to be approximately 3 mm to 15 cm, and it is preferable to design the chamber as thin as possible.

The second stage (1220) may be provided to support the substrate (10). The second stage (1220) may be provided with a second heat treatment device (1221). The second heat treatment device (1221) may serve to maintain the temperature of the substrate (10) uniformly. The second heat treatment device (1221) may control the temperature of each region of the substrate (for example, each region concentrically partitioned) by controlling the temperature or flow rate of a coolant (coolant), or may control the temperature of the substrate (10) uniformly by using another cooling method.

The second stage driving unit (1230) can drive the second stage (1220) upward and downward. When the substrate (10) is transferred through the second inlet/outlet (1320) by the substrate transfer device (1300) while the second stage (1220) is lowered and is settled on the second stage (1220), the second stage driving unit (1230) can drive the second stage (1220) upward toward the second upper chamber (1211).

After the second process treatment for the substrate (10) is performed, the second stage driving unit (1230) can drive the second stage (1220) downward toward the second lower chamber (1212) for subsequent process treatment (first process treatment in the first process chamber). Thereafter, the substrate (10) supported on the second stage (1220) can be transferred to the first process chamber (1100) where the first process treatment is performed through the second inlet/outlet (1320) and the first inlet/outlet (1310) by the substrate transfer device (1300).

The first stage drive unit (1130) and/or the second stage drive unit (1230) may include drive devices such as a hydraulic cylinder drive, a drive motor/screw shaft drive, a drive motor/drive belt drive, a wire drive, a rack/pinion gear combination drive, etc., but it is also possible to raise and lower the stage by various drive devices other than the listed drive devices.

The substrate transfer device (1300) may be provided by a hand supporting the substrate (10) and a hand driving unit for moving the hand between the first process chamber (1100) and the second process chamber (1200) through the first inlet/outlet (1310) and the second inlet/outlet (1320). Since the substrate transfer device (1300) may be implemented by a hand robot transfer device well known to those skilled in the art, a detailed description thereof will be omitted.

The plasma processor (1240) can generate plasma (P) within the second process chamber (1200) to perform plasma processing on the substrate (10). The plasma processor (1240) can be configured to generate plasma in various ways. The plasma processor (1240) can be configured to generate plasma, for example, by a capacitively coupled plasma (CCP) method or an inductively coupled plasma (ICP) method, but plasma methods other than those listed may be used. In the illustrated embodiment, an upper bias device (1241) and a lower bias device (1242) are each provided, but a device for applying an upper bias or a lower bias may be omitted as needed.

The order of the first process treatment and the second process treatment is not particularly limited. That is, the second process treatment may be performed in the second process chamber (1200) after the first process treatment is performed in the first process chamber (1100), or alternatively, the second process treatment may be performed in the second process chamber (1200) after the first process treatment is performed in the first process chamber (1100).

In an embodiment, the first process temperature at which the first process treatment is performed in the first process chamber (1100) may be higher than the second process temperature at which the second process treatment is performed in the second process chamber (1200). This is because it may be advantageous to quickly transfer more heat to the substrate (10) by the microwave heat treatment device (1140) provided in the first process chamber (1100) to treat the substrate (10) at a high process temperature.

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FIG. 2 is a schematic diagram of a microwave heat treatment device constituting a substrate treatment device according to an embodiment of the present invention. Referring to FIGS. 1 and 2, the microwave heat treatment device (1140) may be configured to include a plurality of microwave supplyers (1141) arranged along the circumferential direction of the first reaction chamber (1110) in the peripheral area of the first stage (1120) supporting the substrate (10) so as to generate microwaves in various combinations for uniformly supplying heat to the substrate (10), and a controller (1142) that controls the operation of the plurality of microwave supplyers (1141).

The plurality of microwave supply units (1141) can supply microwaves into the first reaction chamber (1110) by switching between various microwave supply modes. The various microwave supply modes switchable by the controller (1142) can be modes in which microwaves are supplied into the first reaction chamber by combinations of different microwave supply units among the plurality of microwave supply units (1141).

The microwave heat treatment device (1140) can control the supply pattern of microwaves generated from a plurality of microwave supply devices (1141) in various combinations by the controller (1142) so that heat is supplied uniformly to the substrate (10). The time-series supply pattern of microwaves generated by the microwave heat treatment device (1140) can be preset or adaptively determined according to the temperature distribution of the substrate (10) measured in real time during the first process treatment.

In the illustrated embodiment, a plurality of microwave suppliers (1141) are arranged on the same plane. That is, a plurality of microwave suppliers (1141) may be arranged on a horizontal plane formed by a first direction (X) of a horizontal plane and a second direction (Y) perpendicular thereto. Accordingly, a plurality of microwave suppliers (1141) may be arranged on a plane parallel to the upper surface of the first stage (1120). In this embodiment, the amount of heat supplied to the substrate (10) may be made uniform, so that heat may be evenly transferred to the substrate (10), and the vertical width of the first reaction chamber (1110) may be minimized.

Alternatively, unlike the illustrated embodiment, the plurality of microwave feeders (1141) may be designed not to be arranged on the same plane. For example, among the plurality of microwave feeders (1141), the even-numbered microwave feeders (1141) and the odd-numbered microwave feeders (1141) may be arranged on planes with different heights along the circumferential direction of the first reaction chamber (1110). In this case, interference due to the symmetrical structure of microwaves generated from the plurality of microwave feeders (1141) can be reduced, thereby suppressing thermal imbalance in the substrate (10) due to constructive interference and destructive interference.

FIG. 3 is a drawing showing a microwave heat treatment device constituting a substrate treatment device according to another embodiment of the present invention. In the embodiment of FIG. 2, a plurality of microwave supply units (1141) are arranged in a square shape, but a plurality of microwave supply units (1141) may be arranged in a circle as shown in FIG. 3, or may be arranged in a shape not shown.

In the embodiment of FIG. 2, a plurality of microwave supply units (1141) include microwave supply units arranged in a first direction (X) along a pair of facing first sides of the first reaction chamber (1110) when viewed from above, and microwave supply units (1141) arranged in a second direction (X) along a pair of facing second sides of the first reaction chamber (1110). However, in order to prevent interference of microwaves, at least two or more microwave supply units may be arranged misaligned with respect to the first side and the second side of the first reaction chamber (1110).

In the embodiment of FIG. 3, in order to secure stability of thermal control of the substrate, a plurality of microwave suppliers (1141) are arranged in a circular or oval shape corresponding to the sidewall of the first reaction chamber (1110) when viewed from above. However, in order to prevent thermal imbalance due to interference between microwaves generated from a plurality of microwave suppliers (1141), at least two or more microwave suppliers may be arranged offset from the circular or oval shape corresponding to the sidewall of the first reaction chamber (1110). Meanwhile, although not shown, a waveguide may be provided at an end side of the microwave supplier (1141) to set the output direction of the microwave toward the first reaction chamber (1110).

In order for a plurality of microwave suppliers (1141) to be arranged symmetrically with respect to the substrate (10), it is preferable that the number K of the microwave suppliers (1141) be 2N (N is an integer, 2N is an even number). If the number of microwave suppliers (1141) is arranged as an odd number, a pair of microwave suppliers (1141) on opposite sides with respect to the substrate (10) cannot be driven simultaneously, and microwaves are generated asymmetrically, making it difficult to apply uniform heat in the radial direction of the substrate (10).

If the process chamber is formed in a circular shape, the K microwave sources (1141) can be arranged at an angle of 360°/K. This is because designing the angle between the plurality of microwave sources (1141) to be constant can be advantageous in effectively controlling the amount of heat transfer to the substrate (10). For the same reason, if the process chamber is formed in a square shape rather than a circular shape, the plurality of microwave sources (1141) can be arranged such that the distance between adjacent microwave sources (1141) is constant, but is not necessarily limited thereto.

The controller (1142) independently drives a plurality of microwave suppliers (1141) to control the microwave generation pattern (supply pattern) of each microwave supplier (1141), thereby generating microwaves in various combinations (microwave supply modes). FIG. 4 is a drawing exemplifying various combinations of microwave generation patterns of a plurality of microwave suppliers constituting a substrate processing apparatus according to an embodiment of the present invention. FIG. 4 (a) to (n) illustrate microwave generation patterns of a plurality of microwave suppliers (1141) in the order arranged along the circumferential direction.

The controller (1142) can generate microwaves in various combinations of multiple supply modes, including a first supply mode (M1) for driving a plurality of microwave suppliers (1141) simultaneously, a second supply mode (M2) for driving them sequentially in a time-series order, a third supply mode (M3) for driving a pair of microwave suppliers (1141) located opposite each other simultaneously and sequentially in a clockwise or counterclockwise direction, a fourth supply mode (M4) for driving n or more pairs of microwave suppliers (1141) located opposite each other simultaneously and sequentially in a clockwise or counterclockwise direction, a fifth supply mode (M5, M6, M7) for driving odd-numbered and even-numbered microwave suppliers (1141) sequentially or collectively based on the arrangement in the circumferential direction, and a sixth supply mode (M8, M9) for driving microwave suppliers (1141) randomly simultaneously or sequentially.

It should be understood that Fig. 4 is merely an example of a microwave generation pattern by a microwave supply. The microwave generation pattern can be changed in various ways so that an appropriate level of heat for a reaction can be uniformly and effectively transferred to the substrate (10). In Fig. 4, an example in which a plurality of microwave generation patterns are sequentially changed in time series is illustrated, but it is also possible to drive a plurality of microwave supply units with a single microwave generation pattern, or to drive a microwave supply unit by repeating two or more microwave generation patterns.

When the number of multiple microwave sources (1141) is K (K is an integer greater than or equal to 2), the number of combinations of microwave generation that can be generated by the multiple microwave sources (1141) at a specific point in time is ^2K . For example, when the number of arranged microwave sources (1141) is 14, the number of combinations of microwave generation patterns is 16384 (=2 ¹⁴ ), and when the number of arranged microwave sources (1141) is 12, the number of combinations of microwave generation patterns is 4096 (=2 ¹² ). In addition, since the generation pattern of microwaves can be changed in time series, and the duration of the generation pattern of microwaves can also be set in various ways, the generation combinations of microwaves that can be generated by the microwave heat treatment device (1140) become nearly infinite.

Therefore, according to the embodiment of the present invention, the amount of heat supplied to the substrate (10) by the microwave heat treatment device (1140) can be controlled at high speed, very precisely, and uniformly. In addition, according to the embodiment of the present invention, since there is no need to rotate the stage or the microwave heat treatment device, a mechanical system for rotating the stage or the microwave heat treatment device is not required, so the manufacturing cost or maintenance/repair cost of the process equipment can be reduced.

The plurality of microwave sources (1141) may all generate microwaves having the same microwave frequency (e.g., 2.45 GHz), but at least two of the microwave sources may be configured to generate microwaves having different microwave frequencies. For example, some of the plurality of microwave sources (1141) may generate microwaves having 2.4 GHz, and others may generate microwaves having 2.5 GHz. In this case, the influence of constructive interference and destructive interference due to the superposition of microwaves generated from the plurality of microwave sources (1141) can be reduced, and thermal imbalance of the substrate (10) due to constructive/destructive interference can be prevented. The description of the structure, operation, function, effect, etc. of the microwave heat treatment device (1140) described in the above embodiments may be applied identically or similarly to the embodiments described below, and any overlapping description may be omitted.

FIG. 5 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. The substrate processing device (200) according to the embodiment of FIG. 5 is different from the embodiment of FIG. 1, which is composed of dual chambers (a first process chamber and a second process chamber), in that it is implemented with a single chamber. The substrate processing device (200) illustrated in FIG. 5 is composed of a single process chamber (2100), and there is no need to have a substrate transfer device for transferring the substrate between the dual chambers. Therefore, according to the embodiment of FIG. 5, the time required to transfer the substrate (10) between the dual chambers can be reduced, thereby shortening the process time.

The process chamber (2100) may be provided to perform a first process treatment on a substrate (10) at a first process temperature and to perform a second process treatment on the substrate (10) at a second process temperature different from the first process temperature. For example, the process chamber (2100) may be a reaction chamber in which a series of ALE (atomic layer etching) processes are performed, in which cycles including a modification process, an adsorption process, a purging process, a removal process, and a purging process are repeatedly performed.

Similar to the embodiment described in FIG. 1, the first process temperature may be a process temperature set to be optimized for the first process treatment, such as a modification/reformation process, an adsorption process, or a removal process of the substrate (10).

The first process treatment performed in the process chamber (2100) may include, for example, a modification/modification process for modifying/reforming the surface of the substrate (10) during an ALE process, an adsorption process for adsorbing a precursor onto the surface of the substrate (10), a removal process for removing an adsorption layer formed by a reaction of the precursor with modified silicon, etc. of the substrate (10), etc. The second process treatment performed in the process chamber (2100) may include a different process from the first process treatment during an ALE process.

Similar to the embodiment described in FIG. 1, the second process temperature at which the second process treatment is performed may be a process temperature set to be optimized for the removal process of the substrate (10). The second process temperature may be set to a temperature optimized for the second process treatment, for example, a temperature at which an adsorption layer can be effectively removed from a surface layer of the substrate (10), depending on the type of material constituting the substrate (10), the type of precursor or gas, etc.

The process chamber (2100) may include a reaction chamber (2110), a stage (2120), a stage driver (2130), a microwave heat processor (2140), and a plasma processor (2150). The reaction chamber (2110), the stage (2120), the stage driver (2130), the microwave heat processor (2140), and the plasma processor (2150) are different from the embodiment of FIG. 1 described above in that they are implemented in a single chamber. The description of components of the embodiment of FIG. 5 that are identical or corresponding to those of the embodiment of FIG. 1 may be equally applied to the embodiment of FIG. 5, and thus, any redundant description may be omitted.

The reaction chamber (2110) may be provided with an exhaust device (2160) that performs a purging process to exhaust residual gas within the reaction chamber (2110), a gas supply device (not shown) that supplies a process gas such as a precursor gas or a plasma process gas, etc. The stage driving unit (2130) may drive the stage (2120) upward and downward to remove a substrate that has been processed or to remove a substrate before substrate processing. The reaction chamber (2110) may be provided with an inlet/outlet (2170) for introducing/removing a substrate (10). A hand robot (transport robot) for introducing/removing a substrate (10) may be provided in an area adjacent to the inlet/outlet (2170) around the reaction chamber (2110).

FIG. 6 is a process flow diagram showing a series of process treatments performed by the substrate treatment device illustrated in FIG. 5 in a chronological order. Hereinafter, the process treatment process of the substrate treatment device (200) illustrated in FIG. 5 will be described with reference to FIGS. 5 and 6. When the substrate (10) is supported on the stage (2120) through the inlet/outlet (2170) while the stage (2120) is lowered toward the lower chamber (2112), the stage (2120) is driven upward toward the upper chamber (2111) by the stage driving unit (2130).

Process gas A is supplied into the reaction chamber (2110) and plasma (P) is generated by a plasma processor (2150), whereby a modified layer (11) that is modified to a state in which it can react with a precursor can be formed on the surface of the substrate (10) (S10).

When the surface of the substrate (10) is modified, a purging process (S20) for removing unreacted residual process gas A can be performed. Next, process gas B that undergoes an adsorption reaction on the surface of the substrate (10) is supplied into the reaction chamber (2110), and an adsorption process in which a layer (12) in which process gas B is adsorbed on the surface of the substrate (10) is formed can be performed (S30).

The process gas is uniformly adsorbed onto the modified layer (11) on the exposed surface of the substrate (10) by the self-control principle, and the residual process gas can be removed from the reaction chamber (2110) by a purging process (S40). Next, the layer (13) adsorbed onto the substrate (10) can be removed by plasma treatment, heat treatment, or the like (S50). At this time, since the bonding force between the modified layer (11) on the surface of the substrate (10) and the process gas is stronger than the removal energy, the modified layer (11) on the surface of the substrate (10) is also removed together with the adsorption layer of the process gas.

In the removal process, a plurality of microwave supply units of the microwave heat treatment unit (2140) can supply heat to the substrate so that the removal process can be performed efficiently. At this time, the microwave heat treatment unit (2140) can generate microwaves with various microwave supply patterns. Here, the various microwave supply patterns can generate microwaves with a third microwave supply pattern that is preset or controlled according to the real-time temperature of the substrate. By performing a series of cycles of steps S10 to S50 as described above multiple times, the surface of the substrate (10) can be uniformly etched in atomic layer units.

According to the substrate processing device and substrate processing method according to the embodiments of FIGS. 5 and 6, similar to the embodiment of FIG. 1, the amount of heat supplied to the substrate (10) by the microwave heat processor (2140) can be very precisely and uniformly controlled, and the manufacturing cost or maintenance/repair cost of the process equipment can be reduced because a mechanical system for rotating the stage or the microwave heat processor is not required.

In addition, according to the embodiments of FIGS. 5 and 6, plasma treatment and heat treatment can be performed continuously within a single process chamber (2100) without the need to transfer the substrate (10) between dual chambers (the first process chamber and the second process chamber), thereby reducing the time required to transfer the substrate (10) between the dual chambers, thereby shortening the process time. In addition, according to the embodiments of FIGS. 5 and 6, the size of the process equipment can be reduced, and the process equipment cost and the process equipment maintenance/repair time and cost can also be reduced. This is possible because, as described above in the embodiment of FIG. 1, the process temperature required for plasma, heat treatment, etc. can be quickly controlled in various microwave supply modes by a plurality of microwave supplyers constituting the microwave heat treatment device (2140).

FIGS. 7 to 10 are conceptual diagrams showing substrate processing devices according to further embodiments of the present invention. FIG. 11 is an enlarged view of section 'A' of FIG. 9. The embodiments of FIGS. 7 to 11 differ from the previously described embodiments in that they additionally include a microwave reflection structure (3111, 3112, 3211, 3312, 3412, 3220, 3320, 3420) that effectively reflects microwaves toward the substrate (10) within a process chamber (3100, 3200, 3300, 3400) constituting the substrate processing device (300).

In an embodiment, the microwave reflecting structure (3111, 3112, 3211, 3312, 3412, 3220, 3320, 3420) may include a curved reflecting structure (3111, 3112, 3211, 3312, 3412), such as a semicircle or an ellipse, at an upper edge and/or a lower edge region within the reaction chamber (3110, 3210, 3310, 3410) and/or a reflecting structure (3220, 3320, 3420) that is formed to protrude obliquely from an inner surface or an upper or lower edge of the reaction chamber (3110, 3210, 3310, 3410).

Microwave reflecting structures (3111, 3112, 3211, 3312, 3412, 3220, 3320, 3420) may be provided with a material capable of reflecting microwaves, and may be provided with, for example, a material on which a metal or a metal film is deposited. In the embodiment of FIG. 7, curved reflecting structures (3111, 3112), such as a semicircle or an ellipse, having a radius of curvature larger than a reference radius of curvature (for example, 2 mm or more) are provided at upper and lower edges of the reaction chamber (3110). Such curved reflecting structures (3111, 3112) may have a function of reflecting microwaves toward the substrate (10) so that the substrate (10) may be heat-treated at high speed by the microwaves.

In the embodiment of FIG. 8, a curved reflective structure (3211), such as a semicircle or an ellipse, having a radius of curvature greater than a reference radius of curvature (for example, 2 mm or more, more preferably 1 cm or more) may be provided at an upper edge of the reaction chamber (3210), and a reflective structure (3220) may be provided at a lower edge of the reaction chamber (3210) so as to protrude and be inclined relative to the bottom and side surfaces of the reaction chamber (3210). In order for the microwave to be effectively reflected to the substrate (10), the reflective surface (3221) of the reflective structure (3220) may be provided to have an inclination angle (A1) of approximately 15° to 60° relative to the bottom or horizontal plane of the reaction chamber (3210). The reflective structure (3220) may be provided so that its upper surface slopes downward from the outer diameter to the inner diameter.

In the embodiment of FIG. 9, a curved reflective structure (3312), such as a semicircle or an ellipse, having a radius of curvature greater than a reference radius of curvature (for example, 2 mm or more, more preferably 1 cm or more) is provided at a lower edge of the reaction chamber (3310), and a plurality of reflective structures (3320) are provided on an inner surface of the reaction chamber (3310) along a vertical direction (a third direction, Z, perpendicular to the first and second directions). Each reflective structure (3320) may extend in a ring shape along the circumferential direction of the reaction chamber (3310).

A plurality of reflective structures (3320) may have reflective surfaces (3321) that are inclined at an angle of about 15° to 60° with respect to the side (vertical plane) of the reaction chamber (3310), that is, an angle of about 30° to 75° with respect to the horizontal plane (reference numeral 'A2' in FIG. 11). The reflective structures (3320) may have an approximately triangular shape. For arc prevention, it is preferable that the sharp tip portion (reference numeral '3322' in FIG. 11) of the reflective structures (3320) be designed to have a radius of curvature (R1) of 100 ㎛ or more, and a more preferable radius of curvature (R1) is 500 ㎛ or more.

In the embodiment of FIG. 10, a curved reflective structure (3412), such as a semicircle or an ellipse, having a radius of curvature greater than a reference radius of curvature (e.g., 2 mm or more) is provided at a lower edge of the reaction chamber (3410), and a plurality of reflective structures (3420) may be provided along an up-down direction on an inner surface of the reaction chamber (3410). Each reflective structure (3420) may extend in a ring shape along the circumferential direction of the reaction chamber (3410).

A plurality of reflective structures (3420) may have reflective surfaces (3421) inclined at an angle of approximately 15° to 60° with respect to the side (vertical plane) of the reaction chamber (3410). The reflective structures (3420) may have an approximately triangular shape. For arc prevention, it is preferable that the pointed tip portions of the reflective structures (3420) be designed to have a radius of curvature of 100 ㎛ or more.

In the embodiment of FIG. 10, at least two of the plurality of reflective structures (3420) may be designed such that the reflective surfaces (3421) have different inclination angles. In the illustrated embodiment, the upper reflective structure (3420) provided on the upper edge side of the reaction chamber (3410) may be designed to have a gentler inclination angle than the lower reflective structure (3420) provided on the lower side.

FIG. 12 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. The substrate processing device (300) according to the embodiment of FIG. 12 is different from the embodiments illustrated in FIGS. 7 to 11 in that it further includes a reflective structure driving unit (3530) that adjusts the position or direction of a reflective structure (3520). The reflective structure driving unit (3530) can drive the reflective structure (3520) by driving it up and down, moving it horizontally, or rotating it up and down or horizontally.

The reflective structure drive unit (3530) may include, for example, a hydraulic cylinder drive, a drive motor/screw shaft drive, a drive motor/drive belt drive, a wire drive, a rack/pinion gear combination drive, etc. However, in addition to the listed drive devices, it is also possible to raise, level, move, rotate, and drive the reflective structure (3520) up and down by various drive devices.

As the reflective structure (3520) is driven by the reflective structure driving unit (3530), the position or direction of the reflective surface (3521) changes, and accordingly, the transmission pattern of microwaves transmitted to the substrate (10) can be variously controlled. The reflective structure driving unit (3530) can drive the reflective structure (3520) so that the reflective surface (3521) is arranged in a set position or direction according to the driving pattern (microwave supply mode) of a plurality of microwave supply units constituting the microwave heat treatment device (3540). According to the embodiment of FIG. 12, the reflective structure (3520) can be driven up and down to provide more diverse microwave heat treatment modes, and uneven heat supply due to interference (constructive interference, destructive interference) of microwaves can be prevented.

FIG. 13 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. FIG. 14 is a cross-sectional view of a stage constituting the substrate processing device illustrated in FIG. 13. The substrate processing device (400) illustrated in FIGS. 13 and 14 differs from the previously described embodiments in that it is comprised of a process chamber (4100) in which a susceptor (4123) that generates heat by microwaves is provided in an upper region of a stage (4120).

The stage (4120) may be provided to be liftable by the stage driving unit (4130). The stage (4120) may include a stage body (4122), a susceptor (4123) provided on the stage body (4122), and a protective film (4124) covering the susceptor (4123). A heat treatment device (4121) may be provided on the stage body (4122). The susceptor (4123) may be made of a metal film coated on ceramic or a carbon-based material. The protective film (4124) may be made of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc.

The susceptor (4123) can be heated by microwaves generated by the microwave heat processor (4140). According to the embodiments of FIGS. 13 and 14, the susceptor (4123) is heated by microwaves generated by the microwave heat processor (4140), and heat can be more effectively transferred to the substrate (10) by the heat generation of the susceptor (4123).

Fig. 15 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Fig. 16 is an enlarged view of part 'B' of the substrate processing device illustrated in Fig. 15. The substrate processing device (500) illustrated in Figs. 15 and 16 differs from the previously described embodiments in that a susceptor (4123) that generates heat by microwaves is provided on the inner wall surface of a reaction chamber (5110) constituting a process chamber (5100).

The reaction chamber (5110) may include chamber walls (5111, 5112, 5113) and a susceptor (5150) provided on the inner wall surface of the chamber walls (5111, 5112, 5113). The susceptor (5150) may include a heating layer (5150a) made of a metal film or a carbon-based material (e.g., a graphite material) coated on ceramic and generating heat by microwaves generated by a microwave heat processor (5140), and a protective film (5150b) covering the heating layer (5150a). For the heating effect by microwaves, the concentration of the carbon-based material in the heating layer (5150a) is preferably 0.5 wt% or more. In addition, the thickness of the metal film is preferably 800 μm or less. The protective film (5150a) may be composed of, for example, quartz, synthetic glass, alumina, yttria, Si, SiC, etc.

The susceptor (5150) can be heated by microwaves generated by the microwave heat processor (5140). According to the embodiments of FIGS. 15 and 16, the susceptor (5150) is heated by microwaves generated by the microwave heat processor (5140), and heat is applied to the inside of the reaction chamber (5110) by the heat generation of the susceptor (5140), thereby preventing particles or byproducts from being attached (adsorbed) to the inner wall of the reaction chamber (5110).

The susceptor (5150) may include an upper wall susceptor (5151) provided on an upper wall (5111) of the reaction chamber (5110), a side wall susceptor (5152) provided on a side wall (5112) of the reaction chamber (5110), and an exhaust susceptor (5153) provided on a wall (5113) around an exhaust section (5114). The upper wall susceptor (5151) and the exhaust susceptor (5153) may be designed to have a higher temperature than the side wall susceptor (5152). Accordingly, particle contamination of the upper wall or exhaust section of the reaction chamber (5110) may be effectively prevented.

In an embodiment, the upper wall susceptor (5151) and the exhaust susceptor (5153) may be designed to have a higher carbon concentration than the side wall susceptor (5152). Accordingly, the upper wall or exhaust of the reaction chamber (5110) may be effectively prevented from being contaminated with particles or by-products may be adsorbed due to the heat generation of the susceptor, while the carbon concentration of the side wall susceptor (5152) may be lowered, thereby reducing the cost associated with applying high-concentration carbon.

Fig. 17 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Fig. 18 is a plan view of a substrate processing device according to the embodiment of Fig. 17. The embodiments illustrated in Figs. 17 and 18 differ from the previously described embodiments in that each microwave supply (6141) constituting the microwave heat treatment device (6140) has a shutter (6143) that can be opened and closed by a controller (6142).

The shutter (6143) can control the supply and blocking of microwaves. Each microwave supply (6141) may be configured to generate microwaves by a magnetron, or a plurality of microwave supplies (6141) may be configured to supply microwaves through a waveguide and supply them into the reaction chamber (6110) through the shutter (6143) in an open state.

FIG. 19 is a conceptual diagram of a substrate processing device according to another embodiment of the present invention. Referring to FIG. 19, the substrate processing device (700) may be utilized in an atomic layer deposition process. Referring to FIG. 19, the substrate processing device (700) may include a first process chamber (7100), a second process chamber (7200), and a substrate transfer device (7300) for transferring a substrate (10) between the first process chamber (7100) and the second process chamber (7200).

The first process chamber (7100) may be a process chamber that performs a first process treatment on a substrate (10) at a first process temperature. In one embodiment, the first process chamber (7100) may be a reaction chamber in which an etching process is performed to etch a substrate (10) on which an atomic layer deposition process using plasma has been performed by heat treatment. The first process temperature may be a process temperature that is set to be optimized for the etching process of the substrate (10).

The first process temperature may be set to a temperature at which the substrate (10) can be effectively etched, depending on the type of material constituting the substrate (10), the type of precursor or gas, etc. The first process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range or a process temperature profile, or a statistical processing value (e.g., an average value) thereof.

The second process chamber (7200) may be a process chamber that performs a second process treatment on the substrate (10) at a second process temperature that is different from the first process temperature. Accordingly, the first process chamber (7100) and the second process chamber (7200) may perform treatment on the substrate (10) at different process temperatures. In one embodiment, the second process chamber (7200) may be a reaction chamber in which an atomic layer deposition process is performed on the substrate (10). The second process temperature may be a process temperature that is set to be optimized for an atomic layer deposition process using plasma (P).

The second process temperature may be set to a temperature at which the adsorption layer can be effectively removed from the surface layer of the substrate (10) depending on the type of material constituting the substrate (10), the type of precursor gas, etc. The second process temperature does not necessarily mean a specific temperature value, but encompasses a process temperature range or a process temperature profile, or a statistical processing value (e.g., an average value) thereof.

The first process chamber (7100) may include a first reaction chamber (7110), a first stage (7120), a first stage driver (7130), and a microwave heat processor (7140). Although not shown, the first reaction chamber (7110) may be provided with a gas supply (not shown) for supplying a first process gas such as a gas or precursor, an exhaust device for performing a purging process for exhausting residual gas within the first reaction chamber (7110), etc.

The second process chamber (7200) may include a second reaction chamber (7210), a second stage (7220), a second stage driver (7230), and a plasma processor (7240). The second reaction chamber (7210) may be configured to accommodate the second stage (7220), the second stage driver (7230), and the plasma processor (7240).

The plasma processor (7240) can generate plasma (P) within the second process chamber (7200) to perform a plasma atomic layer deposition process for the substrate (10). The plasma processor (7240) can be provided as a plasma generator of the CCP (capacitively coupled plasma) and/or ICP (inductively coupled plasma) type. In the illustrated embodiment, devices for applying upper and lower biases are respectively provided, but the device for applying the lower bias may be omitted as needed.

According to the embodiment of FIG. 19, after performing an atomic layer deposition process on a substrate (10) in a second process chamber (7200), an etching process of the substrate (10) can be performed in a first process chamber (7100). In the process of performing an atomic layer deposition process on a micro-groove on the substrate (10) in the second process chamber (7200), a void space may be generated within the micro-groove. However, by performing a process such as thermal curing and/or anisotropic etching (removing an upper entrance portion of the micro-groove) in the first process chamber (7100) after performing the atomic layer deposition process, the generation of a void space within the micro-groove on the substrate (10) can be prevented.

FIG. 20 is a conceptual diagram illustrating a substrate processing device according to another embodiment of the present invention. Referring to FIG. 20, the substrate processing device (800) is different from the previously described embodiments in that it further includes a heat treatment device driving unit (8150) that elevates and drives a microwave heat treatment device (8140). According to the embodiment of FIG. 20, by elevating and driving the microwave heat treatment device (8140), more diverse microwave heat treatment modes can be provided, and uneven heat supply due to interference (constructive interference, destructive interference) of microwaves can be prevented.

In Fig. 20, an embodiment of driving the microwave heat treatment device (8140) in an upward and downward direction is illustrated, but the microwave heat treatment device (8140) may be rotated and generated with various patterns of microwaves by a plurality of microwave supply devices. The microwave heat treatment device (8140) may include, for example, a driving device such as a hydraulic cylinder driving device, a driving motor/screw shaft driving device, a driving motor/driving belt driving device, a wire driving device, and a rack/pinion gear combination driving device. However, in addition to the driving devices listed above, the microwave heat treatment device (8140) may also be raised, horizontally moved, and rotated by various driving devices.

As described above, according to the embodiment of the present invention, the microwave heat treatment device is configured with a plurality of microwave supply units, and microwaves can be generated in various supply modes by controlling the operation of the plurality of microwave supply units (controlling the microwave output). Accordingly, the process temperature can be controlled at high speed to perform the process at an appropriate process temperature required for the substrate, and uniform processing can be performed even on a large substrate.

Therefore, the substrate processing apparatus and the substrate processing method according to the embodiment of the present invention can be effectively utilized not only in the planar FET or FinFET process, but also in the manufacturing process of GAA (gate all around) FET, and further, MBC (multi-bridge channel) FET devices. The substrate processing apparatus and the substrate processing method according to the embodiment of the present invention can be effectively utilized in the process of, for example, etching the interspace between nanosheets of an MBC (multi-bridge channel) FET device at a fine nano-unit level at high speed, yet precisely and minutely.

The above detailed description is illustrative of the present invention. In addition, the above contents are described to illustrate preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications are possible within the scope of the inventive concept disclosed in this specification, the scope equivalent to the written disclosure, and/or the scope of technology or knowledge in the art.

The described embodiments are intended to best illustrate the technical idea of the present invention, and various modifications required for specific application fields and uses of the present invention are also possible. Therefore, the detailed description of the invention above is not intended to limit the present invention to the disclosed embodiments. In addition, the appended claims should be interpreted to include other embodiments.

10 : Substrate
100, 200, 300, 400, 500, 600, 700, 800 : Substrate Processing Unit
1100, 7100: 1st Process Chamber
1110, 7110: First Reaction Chamber
1111, 7111: First upper chamber
1112, 7112: Lower chamber 1
1120, 7120: Stage 1
1121, 7121: 1st heat treatment machine
1130, 7130: 1st stage drive unit
1140, 7140: Microwave Heat Treater
1141, 6141 : Microwave Feeder
1142, 6142 : Controller
1200, 7200: 2nd process chamber
1210, 7210: Second Reaction Chamber
1211, 7211: Second upper chamber
1212, 7212: Second lower chamber
1220, 7220: Stage 2
1221, 7221: 2nd heat treatment machine
1230, 7230: 2nd stage drive unit
1240, 7240: Plasma Processor
1300, 7300: Substrate transfer device
1310: 1st exit
1320: 2nd Exit
2100 : Process Chamber
2110 : Reaction Chamber
2120, 4120, 5120, 6120 : Stage
2121, 4121: Heat Treater
2130, 4130, 5130: Stage Drive Unit
2140, 3140, 3240, 3340, 3440, 3540 : Microwave Heat Treater
2150 : Plasma Processor
2160 : Exhaust system
2170 : Entry/Exit
3100, 3200, 3300, 3400, 3500: Process Chamber
3110, 3210, 3310, 3410, 3510: Reaction Chamber
3111, 3112, 3211, 3312, 3412, 3511, 3512: Curved Reflective Structures
3220, 3320, 3420, 3520: Reflective Structures
3221, 3521 : Reflector
3322 : Advanced part
3530: Reflective Structure Drive Unit
3540 : Microwave Heat Treater
4110, 5110, 6110, 8110: Reaction Chamber
4122 : Stage body
4123 : Susceptor
4124 : Shield
4140, 5140, 6140, 8140: Microwave Heat Treater
5111: Chamber wall (upper wall)
5112: Chamber Wall (Side Wall)
5113: Chamber wall (wall around exhaust)
5150 : Susceptor
5150a : Heating layer
5150b : Shield
5151: Upper wall susceptor
5152 : Side wall susceptor
5153: Exhaust Susceptor
6143 : Shutter
8150 : Heat treatment machine drive unit

Claims (25)

A first process chamber for performing a first process treatment on a substrate is included,
The above first process chamber:
First reaction chamber;
A first stage provided within the first reaction chamber to support the substrate;
A microwave heat treatment device configured to generate microwaves within the first reaction chamber to transfer heat to the substrate; and
It includes a microwave reflection structure that is provided to extend in a ring shape along the circumferential direction of the first reaction chamber, so as to reflect microwaves generated by the microwave heat treatment device toward the substrate so that the substrate is heat treated at high speed by the microwaves.
The above microwave reflecting structure includes a reflecting structure having a reflecting surface that is formed to protrude obliquely on at least a portion of the inner surface, upper edge region, and lower edge region of the first reaction chamber,
The above reflective structures are provided in a plurality in the vertical direction, and at least two of the above reflective structures are designed with reflective surfaces having different inclination angles.
The microwave heat treatment device comprises a plurality of microwave supply units arranged along the circumferential direction of the first process chamber in the peripheral area of the first stage,
The above plurality of microwave supply devices are arranged to supply microwaves into the first reaction chamber by switching between various microwave supply modes,
A substrate processing device in which the above-described various microwave supply modes are modes in which microwaves are supplied into the first reaction chamber by combinations of different microwave supplyers among the plurality of microwave supplyers. In claim 1,
A substrate processing device, wherein the microwave heat treatment device further includes a controller that independently drives the plurality of microwave sources to control the microwave generation pattern of each microwave source. In claim 2,
A substrate processing device in which the controller controls the supply pattern of microwaves generated from the plurality of microwave supply units in various combinations so that uniform heat is transferred to the substrate. In claim 3,
A substrate processing device, wherein the time-series microwave supply pattern of the microwave supply device is preset or determined according to the temperature distribution of the substrate measured during the first process treatment. In claim 1,
A substrate processing device, wherein the above-described various microwave supply modes include at least two or more of a first supply mode for driving the plurality of microwave suppliers simultaneously, a second supply mode for driving the plurality of microwave suppliers sequentially in a chronological order, a third supply mode for driving a pair of oppositely positioned microwave suppliers simultaneously and sequentially in a clockwise or counterclockwise direction, a fourth supply mode for driving a plurality of oppositely positioned pairs of microwave suppliers simultaneously and sequentially in a clockwise or counterclockwise direction, a fifth supply mode for driving odd-numbered and even-numbered microwave suppliers sequentially or collectively based on the arrangement in the circumferential direction, and a sixth supply mode for driving the plurality of microwave suppliers randomly simultaneously or sequentially. In claim 1,
A substrate processing device, wherein the plurality of microwave sources are provided in an even number and arranged symmetrically around the substrate. In claim 1,
A substrate processing device, wherein at least two of the plurality of microwave sources generate microwaves of different microwave frequencies. In claim 1,
The substrate processing device is provided as a dual chamber having a first process chamber in which a first process treatment is performed on the substrate at a first process temperature, a second process chamber in which a second process treatment, different from the first process treatment, is performed on the substrate at a second process temperature different from the first process temperature, and a substrate transfer device for transferring the substrate between the first process chamber and the second process chamber.
A substrate processing device, wherein the second process chamber comprises a second reaction chamber, a second stage provided within the second reaction chamber to support the substrate, and a plasma processing device that generates plasma within the second reaction chamber to perform plasma processing on the substrate. In claim 8,
The above first process treatment includes a removal process during an atomic layer etching (ALE) process,
A substrate processing device, wherein the second process treatment includes at least one process different from the first process treatment among a reforming process during an ALE process and an adsorption process during an ALE process. In claim 1,
A substrate processing device, wherein a microwave reflection structure is provided in a ring shape extending along the circumferential direction of the first reaction chamber to reflect microwaves generated by the microwave heat treatment device toward the substrate so that the substrate is heat treated at high speed by the microwaves, and the microwave reflection structure includes a curved reflection structure provided in at least a portion of an upper edge region and a lower edge region within the first reaction chamber. delete In claim 1,
A substrate processing device, wherein the reflective surface of the reflective structure provided in the upper edge area or the lower edge area of the first reaction chamber is provided to form an inclined angle of 15° to 60° with respect to the bottom surface or horizontal plane of the first reaction chamber, and the reflective surface of the reflective structure provided on the inner surface of the first reaction chamber is provided to form an inclined angle of 15° to 60° with respect to the inner surface of the first reaction chamber. In claim 12,
A substrate processing device, wherein the cross-section of the above reflective structure is formed into a triangular shape, and the tip of the above reflective structure is designed to have a radius of curvature of 100 ㎛ or more to prevent arcing. delete In claim 1,
A substrate processing device, wherein the reflective surface of the upper reflective structure located at the upper side among the two or more reflective structures has a gentler inclination angle than the reflective surface of the lower reflective structure located at the lower side than the upper reflective structure. A first process chamber for performing a first process treatment on a substrate is included,
The above first process chamber:
First reaction chamber;
A first stage provided within the first reaction chamber to support the substrate;
A microwave heat treatment device configured to generate microwaves within the first reaction chamber to transfer heat to the substrate;
A microwave reflection structure that is provided to extend in a ring shape along the circumferential direction of the first reaction chamber to reflect microwaves generated by the microwave heat treatment device toward the substrate so that the substrate is heat treated at high speed by the microwaves; and
It includes a reflective structure driving unit that controls the position or direction of the reflective structure by driving the reflective structure up and down, moving it horizontally, or rotating it.
The above microwave reflecting structure includes a reflecting structure having a reflecting surface that is formed to protrude obliquely on at least a portion of the inner surface, upper edge region, and lower edge region of the first reaction chamber,
The microwave heat treatment device comprises a plurality of microwave supply units arranged along the circumferential direction of the first process chamber in the peripheral area of the first stage,
The above plurality of microwave supply devices are arranged to supply microwaves into the first reaction chamber by switching between various microwave supply modes,
A substrate processing device in which the above-described various microwave supply modes are modes in which microwaves are supplied into the first reaction chamber by combinations of different microwave supplyers among the plurality of microwave supplyers. In claim 16,
A substrate processing device in which the above-described reflective structure driving unit drives the reflective structure so that the reflective surface is arranged in a position or direction set according to the microwave supply mode of the plurality of microwave supply devices. In claim 1,
The above first stage is:
Stage body in which the first heat treatment device is provided;
A susceptor provided on the stage body and generating heat by microwaves generated by the microwave heat treatment device and transferring heat to the substrate; and
Including a protective film surrounding the above susceptor,
The above susceptor is a substrate processing device including a metal film or a carbon-based material coated on ceramic. In claim 18,
A susceptor is provided on the inner wall surface of the first reaction chamber to prevent particles or by-products from being adsorbed on the inner wall surface of the first reaction chamber by generating heat by microwaves generated by the microwave heat treatment device.
The susceptor is a substrate processing device including a heating layer including a metal film or a carbon-based material coated on ceramic to generate heat by microwaves generated by the microwave heat processor, and a protective film covering the heating layer. A first process chamber for performing a first process treatment on a substrate is included,
The above first process chamber:
First reaction chamber;
A first stage provided within the first reaction chamber to support the substrate;
A microwave heat treatment device configured to generate microwaves within the first reaction chamber to transfer heat to the substrate; and
A susceptor is provided on the inner wall surface of the first reaction chamber to prevent particles or by-products from being adsorbed on the inner wall surface of the first reaction chamber by generating heat by microwaves generated by the microwave heat treatment device.
The microwave heat treatment device comprises a plurality of microwave supply units arranged along the circumferential direction of the first process chamber in the peripheral area of the first stage,
The above plurality of microwave supply devices are arranged to supply microwaves into the first reaction chamber by switching between various microwave supply modes,
The above-mentioned various microwave supply modes are modes in which microwaves are supplied into the first reaction chamber by a combination of different microwave supplyers among the plurality of microwave supplyers,
A substrate processing device wherein the susceptor comprises an upper wall susceptor provided on an upper wall of the first reaction chamber, a side wall susceptor provided on a side wall of the reaction chamber, and an exhaust susceptor provided on a wall around an exhaust section, and the upper wall susceptor and the exhaust susceptor are provided to maintain a higher temperature than the side wall susceptor. In claim 1,
A substrate processing device, wherein each microwave source of the microwave heat treatment device has a shutter that can be opened and closed by a controller, and the shutter controls the supply and blocking of microwaves from each microwave source. In claim 1,
A substrate processing device further comprising a heat treatment device driving unit that drives the microwave heat treatment device upward or downward, or moves or rotates the microwave heat treatment device in a horizontal direction. In claim 22,
A substrate processing device in which the above heat treatment device driving unit drives the microwave heat treatment device in a position or direction set according to the microwave supply mode of the plurality of microwave supply devices. In claim 1,
A substrate processing device, wherein the microwave heat treating device further includes a central microwave source provided on an upper portion of the substrate supported on the first stage and generating microwaves toward the substrate. A substrate processing method performed by a substrate processing device according to any one of claims 1 to 10, 12, 13, and 15 to 24,
Comprising a step of performing a first process treatment on a substrate by a first process chamber,
The above first process chamber:
First reaction chamber;
A first stage provided within the first reaction chamber to support the substrate; and
A microwave heat treatment device is provided to generate microwaves within the first reaction chamber to transfer heat to the substrate,
The microwave heat treatment device comprises a plurality of microwave supply units arranged along the circumferential direction of the first process chamber in the surrounding area of the first stage,
The step of performing the first process treatment includes the step of supplying microwaves into the first reaction chamber while switching the plurality of microwave supply devices between various microwave supply modes,
A substrate processing method, wherein the above-described various microwave supply modes are modes in which microwaves are supplied into the first reaction chamber by combinations of different microwave supplyers among the plurality of microwave supplyers.