KR102741744B1 - Maunfacturing apparatus for superconducting wire and maunfacturing method for superconducting wire using the same - Google Patents

Abstract

The present invention relates to a superconducting wire manufacturing apparatus and a manufacturing method, and is characterized by including a supply unit for supplying a wire having a buffer layer formed thereon, a deposition unit for depositing a superconducting layer on the wire supplied from the supply unit, a deposition assistance unit provided in the deposition unit for assisting the surface reaction of the wire, and a winding unit for winding the wire on which the superconducting layer is deposited in the deposition unit.

Description

{MAUNFACTURING APPARATUS FOR SUPERCONDUCTING WIRE AND MAUNFACTURING METHOD FOR SUPERCONDUCTING WIRE USING THE SAME}

The present invention relates to a superconducting wire manufacturing apparatus and a superconducting wire manufacturing method using the same, and more specifically, to a superconducting wire manufacturing apparatus capable of manufacturing high-quality superconducting wire by accelerating epitaxial growth by applying remote plasma to organic metal chemical vapor deposition, and a superconducting wire manufacturing method using the same.

A superconductor is a material that has zero electrical resistance below its critical temperature (Tc) and exhibits perfect diamagnetism, known as the Meissner effect.

The first generation of superconductivity was first discovered in 1911 when the electrical resistance of mercury became zero at a temperature of 4.2 K in liquid helium, and the second generation of superconductivity was discovered in 1986 when copper oxide superconductors were discovered.

Oxide superconductor (REBCO: RE is one or two rare earth elements (Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu)), or RE, Ba, Cu are individual oxide particles, or two or more of these elements are complex oxide particles.

In order to apply REBCO thin film superconductors to the power transmission field, a process that can be manufactured long while maintaining a high critical current density (Jc) and has a low manufacturing cost must be applied. Therefore, various processes are being applied for the buffer layer and superconducting thin film.

The buffer layer is applied by sputtering and deposition, and the superconducting layer of the high-temperature superconductor wire can be manufactured by methods such as pulsed laser deposition (PLD), reactive co-evaporation (REC), metal organic chemical vapor deposition (MOCVD), and metal organic deposition (MOD).

Among them, metalorganic chemical vapor deposition (MOCVD) refers to a chemical vapor deposition method that uses a liquid-state metalorganic compound raw material. Since this compound is incomplete and easily decomposed, it is vaporized and a gas phase reaction occurs and a chemical vapor deposition reaction occurs on the surface of a substrate (wire) to obtain a solid-state deposition layer.

It has the advantages of dense organization, excellent adhesion to the substrate, and fast deposition speed, but has the disadvantage of slow crystal growth speed.

The background technology for the present invention is disclosed in Korean Patent Publication No. 10-1429553 (registered on August 6, 2014, title of the invention: Superconducting wire and method for forming superconducting wire).

The purpose of the present invention is to provide a superconducting wire manufacturing device capable of manufacturing high-quality superconducting wire by accelerating epitaxial growth by applying remote plasma to organic metal chemical vapor deposition, and a superconducting wire manufacturing method using the same.

A superconducting wire manufacturing device according to the present invention may include: a supply unit for supplying a wire having a buffer layer formed thereon, a deposition unit for depositing a superconducting layer on the wire supplied from the supply unit, a deposition assistance unit provided in the deposition unit for assisting a surface reaction of the wire, and a winding unit for winding the wire on which the superconducting layer is deposited in the deposition unit.

In addition, the deposition unit may include a deposition chamber, a guide unit provided in the deposition chamber to guide movement of the wire and heat the wire, and a spray unit that sprays an organic metal raw material to deposit a superconducting layer on the wire guided by the guide unit.

In addition, the guide portion may include a guide drum formed with a length corresponding to the width of the wire and having a heating unit provided therein.

In addition, the injection unit may include a spray head spaced apart from the guide drum and partially wrapping around the circumference of the guide drum, and having a plurality of micro-holes formed through which the organic metal raw material is sprayed.

Additionally, the guide portion may include a conveyor that transports the wire and has a heating unit provided therein.

In addition, the deposition assistance unit may include a plasma generating unit provided outside the deposition chamber and a plasma induction unit that diffuses plasma between the guide unit and the injection unit.

In addition, the plasma induction part is formed to correspond to the shape of the guide part so that the plasma injection direction line and the surface of the wire can be formed at a uniform distance.

Additionally, the position of the plasma induction unit can be varied so that the distance between the plasma and the wire can be adjusted.

In addition, a differential exhaust section may be provided at the front and rear ends of the deposition section to prevent remote plasma generated from the plasma induction section from being transferred to the wire.

In addition, it may include a heat treatment unit for heat treating the wire on which the superconducting layer supplied from the deposition unit is deposited.

A method for manufacturing a superconducting wire according to the present invention comprises: a wire supply step of supplying a wire having a buffer layer formed on a substrate, a superconducting layer forming step of forming a superconducting layer on the supplied wire, and a winding step of winding the wire on which the superconducting layer is deposited, wherein the superconducting layer forming step may include a heating step of heating the supplied wire and a deposition step of spraying an organic metal raw material onto the heated wire and simultaneously generating remote plasma.

Additionally, after the deposition step, a heat treatment step of heat-treating the wire on which the superconducting layer is deposited can be further performed.

According to the superconducting wire manufacturing device and the superconducting wire manufacturing method using the same according to the present invention, a high-quality superconducting wire can be manufactured by accelerating epitaxial growth by applying remote plasma to the organic metal chemical vapor deposition method.

In addition, the present invention enables uniform spraying of an organic metal raw material by forming a spray head with a shape corresponding to a guide portion, and a plasma induction portion that diffuses plasma is also formed with a shape corresponding to the shape of the guide portion, so that plasma is diffused over the entire surface of the wire at a uniform distance, thereby greatly improving uniform quality and production speed.

In addition, the present invention can secure process conditions such as production speed by controlling the gap between the wire and the plasma induction unit.

In addition, the present invention can improve the deposition performance by maintaining the deposition area in a low vacuum state by providing a differential exhaust section in the deposition chamber, and can prevent the plasma generated between the injection head and the wire from reaching the guide roll, thereby preventing damage to the quality of the wire. Furthermore, the guide roll guiding the wire is provided with a shield plate to prevent damage caused by the plasma passing through the differential exhaust section.

In addition, the present invention is provided with a heat treatment unit for heat-treating a wire on which a superconducting layer is deposited, thereby relieving stress that may occur on a deposition surface by alleviating rapid cooling of the wire heated during deposition during transport.

FIG. 1 is a drawing for explaining a superconducting wire structure according to one embodiment of the present invention.
FIG. 2 is a drawing schematically showing the configuration of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 3 is a perspective view schematically showing a deposition unit of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 4 is a plan view schematically showing a deposition section of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 5 is a drawing schematically showing a modified example of a deposition section of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 6 is a plan view schematically illustrating a modified example of a deposition section of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 7 is a cross-sectional view showing an injection unit of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 8 is a drawing showing a modified example of an injection unit of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 9 is a plan view showing a modified example of an injection unit of a superconducting wire manufacturing device according to one embodiment of the present invention.
FIG. 10 is a drawing showing a modified example of a pipe shape of an injection unit of a superconducting wire manufacturing device according to one embodiment of the present invention.
Figure 11 is a flow chart showing a method for manufacturing a superconducting wire according to one embodiment of the present invention.

Hereinafter, with reference to the attached drawings, an embodiment of a superconducting wire manufacturing device and a superconducting wire manufacturing method using the same according to the present invention will be described.

In this process, the thickness of the lines depicted in the drawing and the size of the components may be exaggerated for the sake of clarity and convenience of explanation. In addition, the terms described below are terms defined in consideration of their functions in the present invention, and may vary depending on the intention or custom of the user or operator. Therefore, the definitions of these terms should be made based on the contents throughout this specification.

In addition, in this specification, when it is said that a part is "connected (or connected)" to another part, this includes not only cases where it is "directly connected (or connected)" but also cases where it is "indirectly connected (or connected)" with another member in between. In this specification, when it is said that a part "includes (or comprises)" a certain component, this does not mean that other components are excluded, unless specifically stated otherwise, but that it can "include (or comprise)" other components.

In addition, the same reference numerals throughout this specification may refer to the same components. Even if the same reference numerals or similar reference numerals are not mentioned or described in a specific drawing, they may be described based on other drawings. In addition, even if a part is not indicated by a reference numeral in a specific drawing, that part may be described based on other drawings. In addition, the number, shape, size, and relative difference in size of detailed components included in the drawings of this application are set for the convenience of understanding, and do not limit the embodiments and may be implemented in various forms.

FIG. 1 is a drawing for explaining a superconducting wire structure according to an embodiment of the present invention, FIG. 2 is a drawing schematically showing the configuration of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 3 is a perspective view schematically showing a deposition unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 4 is a plan view schematically showing a deposition unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 5 is a drawing schematically showing a modified example of the deposition unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 6 is a plan view schematically showing a modified example of the deposition unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 7 is a cross-sectional view showing an injection unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 8 is a drawing schematically showing a modified example of the injection unit of a superconducting wire manufacturing device according to an embodiment of the present invention, FIG. 9 is a plan view schematically showing a modified example of the injection unit of a superconducting wire manufacturing device according to an embodiment of the present invention, and FIG. 10 is a cross-sectional view showing a superconducting wire according to an embodiment of the present invention. This is a drawing showing a modified example of a pipe shape of a manufacturing device injection unit, and FIG. 11 is a flowchart showing a method for manufacturing a superconducting wire according to one embodiment of the present invention.

Referring to FIGS. 1 to 10, a superconducting wire manufacturing device (100) according to one embodiment of the present invention may include a supply unit (110), a deposition unit (120), a deposition assistance unit (160), and a winding unit (190).

First, referring to Fig. 1, a schematic diagram illustrating a superconducting wire structure is provided, which is composed of a substrate (10), a buffer layer (20), a superconducting layer (30), and a protective layer (40). The material of the substrate (10) is mainly Hastelloy or stainless steel, and its thickness is formed to be approximately 50 μm.

And, the buffer layer (20) is composed of a diffusion prevention layer (22), a seed layer (24), an IBAD layer (26), a homoepitaxial layer (28), and a strain matching layer (29), and is formed to have a total thickness of approximately 1.0 ㎛.

The diffusion prevention layer (22) is composed of a metal oxide such as aluminum oxide (Al₂O₃) and forms a film by sputtering. This is to prevent the components of the substrate (10) material from diffusing toward the seed layer (24).

The seed layer provides a nucleation surface for the IBAD layer (26) and forms a film (Y ₂ O ₃ ) by sputtering.

The IBAD layer (26) is a layer formed by using the IBAD (Ion Beam Assist Deposition) method to form a film (MgO), and is the most important process in the buffer layer (20). As shown in FIG. 1, it provides a two-axis (a, c axis) orientation to the superconducting layer (30), and is a two-axis orientation having crystal orientations aligned along crystal axes on both the in-plane and out-of-plane sides of the thin film.

In addition, the homo-epi layer (28) plays a role in improving the biaxial orientation of the IBAD layer (26) and forms a film (MgO) by E-beam deposition, and the strain-matching layer (29) plays a role in reducing the lattice mismatch between the magnesium oxide constituting the IBAD layer (26) and the superconducting layer (30) and forms a film (LaMnO₃) by sputtering.

The superconducting wire manufacturing device (100) according to the present embodiment deposits a superconducting layer (30) on top of a buffer layer (20), so that the superconducting layer (30) has the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can be grown while maintaining the crystal structure and the same orientation of the substrate (10).

The superconducting wire manufacturing device (100) according to this embodiment has a supply unit (110), a deposition unit (120), and a winding unit (190) in a reel-to-reel format and are connected by a vacuum.

The supply unit (110) supplies a wire (1) having a buffer layer (20) formed thereon, and may include a supply chamber (112) and an unwinding roller (114) provided in the supply chamber (112) and through which the wire (1) having a buffer layer (20) formed thereon is unwound.

The wire (1) is wound around the unwinding roller (114), and the wire (1) can be sequentially unwound and provided to the deposition unit (120) by the rotation of the unwinding roller (114).

The deposition unit (120) deposits a superconducting layer (30) on a wire (1) supplied from the supply unit (110), and may include a deposition chamber (130), a guide unit (140), and an injection unit (150).

The deposition chamber (130) is connected to the supply chamber (112) by a connecting pipe.

And, the guide part (140) is provided in the deposition chamber (130) to guide the movement of the wire (1) and heat the wire (1). The guide part (140) is formed with a length corresponding to the width of the wire (1) and may be formed of a guide drum (142) having a heating unit (144) provided therein.

Guide rolls (135) may be provided on the front and rear sides of the guide drum (142) to guide the wire (1) to the guide drum (142).

The heating unit (144) is provided inside the guide drum (142), and by heating the guide drum (142), the wire (1) can be heated to a temperature suitable for depositing a superconducting layer (30), and while the heated wire (1) moves along the outer periphery of the guide drum (142), the superconducting layer (30) can be deposited by the spraying unit (150) and the deposition assistance unit (160) described below.

The injection unit (150) is configured to inject an organic metal raw material to deposit a superconducting layer (30) on a wire (1) guided by a guide unit (140), and includes an injection head (152) that is spaced apart from a guide drum (142) and wraps around a portion of the guide drum (142) and has a plurality of micro-holes (152a) formed into which the organic metal raw material is injected.

The injection head (152) is connected to an organic metal raw material supply unit (154) provided on the outside of the deposition chamber (130).

The organic metal raw material supply unit (154) is equipped with a vaporization device (155), and the organic metal raw material is gasified and sprayed toward the heated wire (1) through the micro-holes (152a) of the spray head (152).

A chemical reaction occurs in the space between the outer part of the injection head (152) and the wire (1) wound around the outer periphery of the guide drum (142), and organic substances are decomposed by heat and discharged to the outside of the deposition chamber (130) through the vacuum pump (132) of the deposition chamber (130), and the remaining metal is attached to the heated wire (1) to form a deposit.

In more detail, when the gasified organometallic raw material is injected through the injection head (152), the gas reacts to form a film of Y (Yttrium), B (Barium), and C (Copper) components on the surface of the wire (1).

As illustrated in FIGS. 2 to 4, the injection head (152) according to the present embodiment may be formed with a curvature corresponding to the outer surface of the guide drum (142) and formed in a shape that wraps around the circumference of the guide drum (142).

The injection head (152) according to the present embodiment is illustrated as a U-shape that surrounds the perimeter of the guide drum (142), but is not limited thereto and may be formed in various shapes such as a flat shape or a circular shape.

Meanwhile, referring to FIGS. 5 and 6, as a modified example of the deposition unit (120), the guide unit (240) may include a conveyor (242) that transports the wire (1) and has a heating unit (244) provided therein.

For example, in the case of the above-mentioned guide drum (142), a wire (1) with a large width, for example, a wire (1) with a width of 13 cm, can be applied, and in the case of the conveyor (242), a wire (1) with a small width, for example, a wire (1) with a width of 4 cm, can be applied.

A heating unit (244) is provided at the bottom of the conveyor (242), and by heating the conveyor (242), the wire (1) can be heated to a temperature suitable for depositing a superconducting layer (30), and an injection unit (150) and a deposition assistance unit (160) are provided at the top of the conveyor (242), thereby allowing deposition of the superconducting layer (30).

At this time, the injection head (152) may be formed in a flat shape and placed on the upper part of the conveyor (242) so as to correspond to the conveyor (242).

And, referring to FIG. 7, the injection head (152) can be supplied in a partitioned manner so as to prevent the gas supplied from the organic metal raw material supply unit (154) from reacting with each component within the injection head (152).

Meanwhile, referring to FIGS. 8 and 9, as a modified example of the injection head (252), the injection head (252) may include a base plate (253), a plurality of supply pipes (244) provided on the upper portion of the base plate (253) for supplying an organic metal raw material, and a plurality of cooling pipes (245) provided between the supply pipes (244).

These supply pipes (244) and cooling pipes (245) may be formed and arranged in a square shape as shown in (a) of FIG. 9, or may be formed and arranged in a circular shape as shown in (b) of FIG. 9.

The shapes of the supply pipe (244) and the cooling pipe (245) are not limited to square and circular, and can be formed into various shapes that can smoothly supply the organic metal raw material to the wire (1).

And, as illustrated in Fig. 10, the cross-sectional shape of the supply pipe (244) and the cooling pipe (245) can be formed in various shapes, such as a square shape as in Fig. 10 (a) or a circle shape as in Fig. 10 (b).

The deposition assistance unit (160) is provided in the deposition unit (120) to assist the surface reaction of the wire (1), and may include a plasma generation unit (162) provided outside the deposition chamber (130) and a plasma induction unit (164) that diffuses plasma between the guide unit (140) and the injection unit (150).

The plasma generating unit (162) supplies monoatomic oxygen (O), ionizes high-purity (99.9999%) diatomic oxygen (O ₂ ) into monoatomic oxygen (O 2 ) and supplies it to the plasma induction unit (164).

In addition, the plasma induction part (164) is formed to correspond to the shape of the guide part (140, 240) so that the plasma injection direction line and the surface of the wire (1) can be formed at a uniform distance.

In more detail, the plasma induction unit (164) is provided between the guide drum (142) and the injection head (152), is formed in a U shape along the curvature of the guide drum (142), and is positioned opposite to the direction of travel of the wire (1) so as to be able to inject monoatomic oxygen (O) supplied from the plasma generation unit (162) in both directions or in one direction.

Of course, in the case of a modified example, the plasma induction unit (164) is formed in a flat shape according to the shape of the conveyor (242).

In this way, the oxygen plasma generated through the plasma generating unit (162) outside the deposition chamber (130) is induced close to the wire (1) between the injection head (152) and the wire (1) inside the deposition chamber (130) through the plasma induction unit (164).

Therefore, a YBa ₂ Cu ₃ O _7-x (REBCO) film is finally formed on the surface of the wire (1). The process of growing this film is called epitaxial growth, and the crystal of the grown wire (1) must have the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can grow while maintaining the crystal structure and the same orientation (a, c axis) of the wire (1).

In this way, by achieving high-quality thin film epitaxial growth and doping with non-superconducting particles, control such as increasing the critical current size under a magnetic field is possible only by controlling the gas flow rate and the wire (1) temperature.

The position of the plasma induction unit (164) can be changed so that the distance between the remote plasma and the wire (1) can be adjusted.

This can be achieved by the plasma induction unit (164) using a separate length adjustment means (not shown). That is, by varying the position of the plasma induction unit (164) by means of gear operation or a cylinder driven by a motor, the distance between the plasma spread from the plasma induction unit (164) and the wire (1) can be adjusted, thereby varying this according to the production speed of the superconducting wire (1).

In addition, a differential exhaust unit (170) may be provided at the front and rear ends of the deposition unit (120) to prevent plasma generated from the plasma induction unit (164) from being transferred to the wire (1).

The differential exhaust section (170) can improve deposition performance by maintaining a relatively low vacuum state in the area where deposition actually takes place, and can play a role in preventing plasma generated between the injection head (152) and the wire (1) from reaching the guide roll (135).

That is, when the plasma reaches the guide roll (135), it damages the surface of the guide roll (135), and as a result, it is transferred to the wire (1), which has a fatal effect on the quality of the wire (1). Therefore, in order to prevent plasma from being generated around the guide roll (135), partial gases inside are removed in the differential exhaust section (170).

It is preferable that the differential exhaust section (170) have a large inlet to improve removal efficiency.

Furthermore, a shield plate (136) that protects the guide roll (135) may be placed on the guide roll (135) to prevent damage caused by plasma passing through the differential exhaust section (170).

The winding unit (190) may include a winding chamber (194) and a winding roller for winding a wire (1) on which a superconducting layer (30) is formed.

Meanwhile, a heat treatment unit (180) may be provided between the deposition unit (120) and the winding unit (190). The heat treatment unit (180) may include a heat treatment chamber (182) connected to the deposition chamber (130) and the winding chamber (194) by a connecting pipe, respectively, and a heating unit (184) for heating the wire (1) on which the superconducting layer (30) is formed and transported.

The wire (1) heated to a high temperature by the heating unit (184) of the guide section (140) is quickly cooled during transport after deposition, and stress may occur on the deposition surface due to this cooling. The heat treatment section (180) alleviates this cooling, thereby providing a high-quality superconducting wire (1) that alleviates stress that may occur on the deposition surface.

Hereinafter, a method for manufacturing a superconducting wire according to one embodiment of the present invention will be described.

Referring to FIG. 11, a method for manufacturing a superconducting wire according to one embodiment of the present invention may include a wire supply step (S100), a superconducting layer forming step (S200), and a winding step (S400).

First, all processes of the superconducting wire manufacturing method are performed in a reel-to-reel format and are carried out in each chamber connected by vacuum. This can prevent the superconducting wire (1), which is weak to moisture, from being corroded.

The wire supply step (S100) supplies a wire (1) on which a buffer layer (20) is formed to a substrate (10). The wire (1) is wound around a winding roller (114) and is sequentially pulled out and supplied to a deposition unit (120).

The superconducting layer formation step (S200) forms a superconducting layer (30) on the supplied wire (1), and may include a heating step (S210) and a deposition step (S220).

Before the process of forming the superconducting layer (S200), the deposition chamber (130) is evacuated to maintain the process pressure and is maintained in a vacuum state, and the differential exhaust unit (170) provided in the deposition chamber (130) is operated to maintain the space where the deposition takes place in a low vacuum state.

Then, the injection unit (150) and the deposition auxiliary unit (160) are operated to supply the organic metal raw material and spread the plasma.

Thereafter, the superconducting layer forming step (S200) process is performed by the operation of the guide unit (140). The heating step (S210) is to heat the wire (1), and as shown in FIGS. 2 and 5, the heating unit (144, 244) provided inside the guide drum (142) or inside the conveyor (242) is operated to heat the wire (1) transported along the guide drum (142) or the conveyor (242) to a temperature suitable for deposition.

And, in the deposition step, the organic metal raw material is sprayed through a number of micro holes (152a) from the spray head (152) onto the wire (1) heated by the heating unit (144, 244), and at the same time, plasma is diffused by the deposition assistance unit (160) to assist the surface reaction of the wire (1).

To explain this in detail, monoatomic oxygen (O) provided from a plasma generating unit (162) is injected in both directions or in one direction through a plasma induction unit (164) and is guided closer to the wire (1) between the injection head (152) and the wire (1).

That is, by spraying the vaporized gas of the organic metal raw material, a film of Y (Yttrium), B (Barium), and C (Copper) components is formed on the surface of the wire (1), and ionized oxygen ions diffused from the plasma induction unit (164) are combined here to ultimately form a YBa ₂ Cu ₃ O _7-x (REBCO) film on the surface of the wire (1).

The crystal of the grown wire (1) can have the same lattice structure as the crystal structure grown in the IBAD layer (26), and the growing crystal layer can grow while maintaining the crystal structure and the same orientation (a, c axis) of the wire (1).

And, the most important condition for using the second-generation high-temperature superconductor (HTS) wire in superconducting applications (such as electromagnets) is a high critical current ( IC ) value under a high magnetic field.

In particular, the critical current density (Jc) should be as large as possible even under a large magnetic field applied in an arbitrary direction. The limit of the critical current density is determined by the action of an artificial pin (flux pinning center) that fixes the magnetic flux lines distributed inside the superconductor from moving against the Lorenz force when the magnetic flux lines that invade from the outside try to move due to the Lorenz force.

These magnetic flux pinning points including impurities can be naturally created during a process for manufacturing a superconducting wire according to one embodiment of the present invention.

After the deposition step (S200), a heat treatment step (S300) is performed to heat treat the wire (1) on which the superconducting layer (30) is deposited. The heat treatment step (S300) heats the wire (1) on which the superconducting layer (30) is formed and transported by a heating unit (184), thereby preventing the wire (1) deposited at a high temperature from cooling rapidly during transport, thereby relieving cooling, thereby relieving stress that may occur on the deposition surface.

After the heat treatment step (S300), the winding step (S400) is performed. In the winding step (S400), the wire (1) on which the superconducting layer (30) is formed is wound around a winding roller (194) so that it can be transferred to the next process.

According to the present invention described above, a high-quality superconducting wire can be manufactured by accelerating epitaxial growth by applying remote plasma to an organic metal chemical vapor deposition method.

In addition, the present invention enables uniform spraying of an organic metal raw material by forming a spray head with a shape corresponding to a guide portion, and a plasma induction portion that diffuses plasma is also formed with a shape corresponding to the shape of the guide portion, so that plasma is diffused over the entire surface of the wire at a uniform distance, thereby greatly improving uniform quality and production speed.

Although the present invention has been described with reference to the embodiments shown in the drawings, these are merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom.

Therefore, the technical protection scope of the present invention should be defined by the following patent claims.

1: Pre-wire 10: Substrate
20: Buffer layer 22: Diffusion prevention layer
24: Seed layer 26: IBAD layer
28: Homoepilayer 29: Strainmatchinglayer
30: Superconducting layer 40: Protective layer
100: Superconducting wire manufacturing equipment
110: Supply section 112: Supply chamber
114: Roller 120: Deposition part
130: Deposition chamber 132: Vacuum pump
135: Guide roller 136: Shield plate
140, 240: Guide part 142: Guide drum
144, 244: Heating unit 150: Injection unit
152, 252: Injection head 152a: Micro hole
154: Organic metal raw material supply unit 155: Vaporization device
160: Deposition assistant part 162: Plasma generator part
164: Plasma induction part 170: Differential exhaust part
180: Heat treatment section 182: Heat treatment chamber
184: Heating unit 190: Coil unit
192: Winding chamber 194: Winding roller
242: Conveyor 252: Base plate
244: Supply pipe 245: Cooling pipe

Claims (12)

A supply unit that supplies a wire with a buffer layer formed thereon;
A deposition unit for depositing a superconducting layer on the wire supplied from the supply unit;
A deposition assistance unit provided in the above deposition unit to assist the surface reaction of the wire; and
Including a winding section for winding the wire on which the superconducting layer is deposited in the above deposition section,
The above deposition unit is a deposition chamber;
A guide part provided in the deposition chamber to guide the movement of the wire and heat the wire; and
It includes a spraying unit that sprays an organic metal raw material to deposit a superconducting layer on the wire guided by the above guide unit,
The above deposition assistance unit is a plasma generating unit provided outside the deposition chamber; and
It includes a plasma induction unit that diffuses plasma between the guide unit and the injection unit,
A superconducting wire manufacturing device characterized in that the plasma induction part is formed to correspond to the shape of the guide part so that the remote plasma injection direction line and the surface of the wire are formed at a uniform distance.
delete In paragraph 1,
A superconducting wire manufacturing device characterized in that the guide part includes a guide drum formed with a length corresponding to the width of the wire and having a heating unit provided inside.
In the third paragraph,
A superconducting wire manufacturing device characterized in that the injection unit includes a spray head that is spaced apart from the guide drum and partially surrounds the circumference of the guide drum, and in which a plurality of micro-holes through which the organic metal raw material is sprayed are formed.
In paragraph 1,
A superconducting wire manufacturing device characterized in that the guide section includes a conveyor that transports the wire and has a heating unit provided inside.
delete delete In paragraph 1,
A superconducting wire manufacturing device characterized in that the position of the plasma induction unit is variable so that the distance between the plasma and the wire can be adjusted.
In paragraph 1,
A superconducting wire manufacturing device characterized in that a differential exhaust section is provided at the front and rear ends of the deposition section to prevent plasma generated from the plasma induction section from being transferred to the wire.
In paragraph 1,
A superconducting wire manufacturing device characterized by including a heat treatment unit for heat-treating the wire on which the superconducting layer supplied from the deposition unit is deposited.
A wire supply step for supplying a wire having a buffer layer formed on a substrate;
A superconducting layer forming step of forming a superconducting layer on the supplied wire;
Comprising a winding step of winding the wire on which the superconducting layer is deposited;
The above superconducting layer forming step is a heating step for heating the supplied wire; and
It includes a deposition step of spraying an organic metal raw material onto the heated above-mentioned wire and simultaneously generating plasma.
A method for manufacturing a superconducting wire, characterized in that the above deposition step is formed so that the plasma injection direction line and the surface of the wire are formed at a uniform distance through a plasma induction unit.
In Article 11,
A method for manufacturing a superconducting wire, characterized in that after the above deposition step, a heat treatment step of heat-treating the wire on which the superconducting layer is deposited is further performed.

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