KR100464204B1 - 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 - Google Patents
그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 Download PDFInfo
- Publication number
- KR100464204B1 KR100464204B1 KR10-2001-0032067A KR20010032067A KR100464204B1 KR 100464204 B1 KR100464204 B1 KR 100464204B1 KR 20010032067 A KR20010032067 A KR 20010032067A KR 100464204 B1 KR100464204 B1 KR 100464204B1
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- South Korea
- Prior art keywords
- mask
- gray tone
- pattern
- photosensitive material
- tone mask
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- Expired - Lifetime
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/01—Manufacture or treatment
- H10D86/021—Manufacture or treatment of multiple TFTs
- H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
- H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
- H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136231—Active matrix addressed cells for reducing the number of lithographic steps
- G02F1/136236—Active matrix addressed cells for reducing the number of lithographic steps using a grey or half tone lithographic process
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
- 기판 위에 다수의 박막을 순차적으로 증착하고 각각의 박막을 패터닝하여 전자소자를 제조하는 공정에서, 사진 식각을 위하여 사용되는 패터닝된 그레이톤 마스크에 있어서,상기 마스크는 노광장치의 스캐닝방향에 대해 수직방향 및 수평방향으로 형성된 그레이톤 패턴을 포함하며, 상기 패턴을 통과하여 감광물질에 조사되는 광량이 서로 동일하도록 상기 수직방향과 수평방향의 패턴은 그 형태가 다른 것을 특징으로 하는 그레이톤 마스크.
- 제 1 항에 있어서, 상기 마스크는 수직방향과 수평방향의 패턴간의 간격을 달리한 것을 특징으로 하는 그레이톤 마스크.
- 제 1 항에 있어서, 상기 마스크는 수직방향과 수평방향의 패턴간의 폭을 달리한 것을 특징으로 하는 그레이톤 마스크.
- 제 1 항에 있어서, 상기 노광장치는 스캐닝 방식의 얼라이너인 것을 특징으로 하는 그레이톤 마스크.
- 제 4 항에 있어서, 포지티브 감광물질을 사용하는 경우에는 수직방향의 마스크 패턴은 수평방향의 마스크 패턴보다 간격을 넓게 하거나 폭을 좁게 하는 것을 특징으로 하는 그레이톤 마스크.
- 제 4 항에 있어서, 네가티브 감광물질을 사용하는 경우에는 수직방향의 마스크 패턴은 수평방향의 마스크 패턴보다 간격을 좁게 하거나 폭을 넓게 하는 것을 특징으로 하는 그레이톤 마스크.
- 제 1 항에 있어서, 상기 마스크에 의하여 그레이톤 패턴에 대응하는 감광물질은 노광장치의 스캐닝방향에 관계없이 동일한 두께의 그레이톤으로 패턴화되는 것을 특징으로 하는 그레이톤 마스크.
- 액정디스플레이의 액티브패널 상에 게이트전극을 형성하는 단계;상기 게이트전극 상에 유전막, 반도체층, 불순물 반도체층, 소스/드레인 금속층을 순차적으로 적층하는 단계;상기 소스/드레인 금속층 위에 감광물질을 도포하는 단계;회절노광이 가능한 그레이톤 마스크로서, 노광장치의 스캐닝방향에 대해 수직방향과 수평방향의 슬릿간의 간격을 달리한 마스크를 사용하여 박막 트랜지스터의 채널 영역에 해당하는 게이트전극 상부의 감광물질에 그레이톤의 노광영역과 데이터라인과 소스전극 및 드레인전극 영역의 감광물질에 완전노광영역을 형성하는 단계;상기 그레이톤의 노광영역과 완전 노광영역 이외의 부분에서 1차 식각 공정으로 상기 소스/드레인 금속층, 불순물 반도체층, 반도체층을 제거하는 단계;상기 그레이톤의 노광영역을 완전히 제거한 다음, 상기 채널 영역의 상기 불순물 반도체층과 소스/드레인 금속층을 2차로 식각하여 소스전극과 드레인전극을 형성하는 단계;보호층을 액티브패널 전면에 증착한 후, 상기 보호층을 패터닝하여 상기 드레인전극 상에 픽셀전극 콘택용 홀을 형성하는 단계; 및상기 액티브패널 전면에 픽셀전극용 도전층을 형성시키고, 상기 도전층을 패터닝하여 픽셀전극을 형성하는 단계를 포함하여 구성되는 액정디스플레이 제조방법.
- 제 8 항에 있어서, 상기 박막 트랜지스터 채널 영역의 상기 불순물 반도체층, 소스/드레인 금속층의 식각은 동시에 이루어지는 것을 특징으로 하는 액정디스플레이 제조방법.
- 제 8 항에 있어서, 상기 박막 트랜지스터 채널 영역의 상기 불순물 반도체층, 소스/드레인 금속층의 식각은 단계적으로 이루어지는 것을 특징으로 하는 액정디스플레이 제조방법.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0032067A KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
| US10/163,431 US6876428B2 (en) | 2001-06-08 | 2002-06-07 | Method of manufacturing a liquid crystal display panel using a gray tone mask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0032067A KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20020093351A KR20020093351A (ko) | 2002-12-16 |
| KR100464204B1 true KR100464204B1 (ko) | 2005-01-03 |
Family
ID=19710558
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-0032067A Expired - Lifetime KR100464204B1 (ko) | 2001-06-08 | 2001-06-08 | 그레이톤 마스크 및 이를 이용한 액정디스플레이 제조방법 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US6876428B2 (ko) |
| KR (1) | KR100464204B1 (ko) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002141512A (ja) * | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
| JP4565799B2 (ja) | 2002-07-01 | 2010-10-20 | 大林精工株式会社 | 横電界方式液晶表示装置、その製造方法、走査露光装置およびミックス走査露光装置 |
| KR101009662B1 (ko) * | 2003-12-30 | 2011-01-19 | 엘지디스플레이 주식회사 | 액정표시장치의 마스크 |
| JP4614696B2 (ja) * | 2004-06-24 | 2011-01-19 | Hoya株式会社 | グレートーンマスクの製造方法 |
| KR101061844B1 (ko) * | 2004-06-29 | 2011-09-02 | 삼성전자주식회사 | 박막 표시판의 제조 방법 |
| JP2006030320A (ja) * | 2004-07-12 | 2006-02-02 | Hoya Corp | グレートーンマスク及びグレートーンマスクの製造方法 |
| TWI294177B (en) * | 2005-12-30 | 2008-03-01 | Au Optronics Corp | Method for manufacturing pixel structure |
| US7754509B2 (en) * | 2006-03-29 | 2010-07-13 | Chunghua Picture Tubes, Ltd. | Manufacturing method for thin film transistor |
| CN100421019C (zh) * | 2006-12-06 | 2008-09-24 | 友达光电股份有限公司 | 液晶显示装置基板的制造方法 |
| US20080182179A1 (en) * | 2007-01-25 | 2008-07-31 | Allied Integrated Patterning Corp. | Gray tone mask and method for manufacturing the same |
| KR101392848B1 (ko) * | 2007-03-28 | 2014-05-09 | 삼성디스플레이 주식회사 | 마스크 및 이의 제조 방법 |
| CN101315517A (zh) * | 2007-05-30 | 2008-12-03 | 北京京东方光电科技有限公司 | 像素沟道区的掩模版及用该掩模版形成的薄膜晶体管 |
| CN101382728B (zh) * | 2007-09-07 | 2010-07-28 | 北京京东方光电科技有限公司 | 灰阶掩膜版结构 |
| CN101387825B (zh) * | 2007-09-10 | 2011-04-06 | 北京京东方光电科技有限公司 | 补偿型灰阶掩膜版结构 |
| TWI374510B (en) * | 2008-04-18 | 2012-10-11 | Au Optronics Corp | Gate driver on array of a display and method of making device of a display |
| CN101661907B (zh) * | 2008-08-27 | 2011-12-28 | 北京京东方光电科技有限公司 | 液晶显示装置的阵列基板制造方法 |
| TWI444758B (zh) * | 2009-06-19 | 2014-07-11 | Au Optronics Corp | 薄膜電晶體元件與用於定義薄膜電晶體元件之光罩及薄膜電晶體元件之製作方法 |
| KR101673618B1 (ko) * | 2010-12-06 | 2016-11-07 | 두산공작기계 주식회사 | Nc 공작기계 공구경로 파트 프로그램 수정 시스템 |
| CN108089396A (zh) * | 2018-01-03 | 2018-05-29 | 京东方科技集团股份有限公司 | 一种单缝衍射掩膜板及制作方法、薄膜晶体管、阵列基板 |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250446A (ja) * | 1995-02-16 | 1996-09-27 | Samsung Electron Co Ltd | グレートーンマスク、これを用いたパターンの形成方法およびイオン注入方法 |
| JPH08306615A (ja) * | 1995-05-10 | 1996-11-22 | Oki Electric Ind Co Ltd | ハーフトーンマスク及びそれを用いたパターン形成方法 |
| KR20020091447A (ko) * | 2001-05-30 | 2002-12-06 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 액정표시장치의 제조방법 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR0186067B1 (ko) * | 1993-08-06 | 1999-05-15 | 기타지마 요시토시 | 계조 마스크 및 그의 제조방법 |
| US5914202A (en) * | 1996-06-10 | 1999-06-22 | Sharp Microeletronics Technology, Inc. | Method for forming a multi-level reticle |
| JP3347670B2 (ja) * | 1998-07-06 | 2002-11-20 | キヤノン株式会社 | マスク及びそれを用いた露光方法 |
-
2001
- 2001-06-08 KR KR10-2001-0032067A patent/KR100464204B1/ko not_active Expired - Lifetime
-
2002
- 2002-06-07 US US10/163,431 patent/US6876428B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08250446A (ja) * | 1995-02-16 | 1996-09-27 | Samsung Electron Co Ltd | グレートーンマスク、これを用いたパターンの形成方法およびイオン注入方法 |
| JPH08306615A (ja) * | 1995-05-10 | 1996-11-22 | Oki Electric Ind Co Ltd | ハーフトーンマスク及びそれを用いたパターン形成方法 |
| KR20020091447A (ko) * | 2001-05-30 | 2002-12-06 | 주식회사 현대 디스플레이 테크놀로지 | 고개구율 액정표시장치의 제조방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20020093351A (ko) | 2002-12-16 |
| US6876428B2 (en) | 2005-04-05 |
| US20020186332A1 (en) | 2002-12-12 |
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