JPS62151562A - Thin film forming equipment - Google Patents

Abstract

PURPOSE:To provide a thin film forming device which can form a thin film having high quality on a wafer with good reproducibility by providing a vacuum vessel to contain a thin film forming material ad body to be formed with the thin film and gas component analyzing instrument for analyzing the gaseous components in said vacuum vessel. CONSTITUTION:The semiconductor wafer 2 which is the body to be formed with the thin film is set in the vacuum vessel 1 after the vessel 1 is released to the atm. The inside of the vessel 1 is then evacuated to about 10<-1>Torr vacuum by a rotary oil pump 3a. The inside of the vessel 1 is evacuated to about 10<-7>Torr by a cryogenic pump 4a and gaseous Ar having about 99.999% purity is introduced into the vessel 1. The output of a sputtering power source is impressed to a target 6 and the target material is deposited on the surface of the wafer 2 by the plasma generated near the surface thereof. The gaseous components are kept detected at all times by using the gaseous component analyzing instrument 8. A mass spectrograph sensor 10 attached to the vessel 1 is maintained under <=10<-5>Torr by using a pump 4b. A differential pressure is generated between the vacuum pressure in the vessel 1 and the vacuum pressure in the sensor 10 part by a differential pressure generator and the gaseous components in the vessel 1 are kept detected 10 at all times.

Description

[Detailed Description of the Invention] [Industrial Application Field] This invention relates to a thinning forming bag σ, and is particularly applicable to the work of forming a thin film on the surface of a semiconductor wafer in one production process for manufacturing Ubata Sosopox. This is related to the sputtering 1A setting used.

[Conventional technology]

FIG. 2 is a cross-sectional view showing an example of a sputtering apparatus which is a conventional thin film forming apparatus of this kind, and in the figure (1)
Fi vacuum chamber, (2) is a semiconductor wafer as a thin film forming object, (3a) is an oil pump, (4 &) is a cryopump, and Isn' is a vacuum pressure for measuring the vacuum pressure in the vacuum chamber t1). The sensor, (6) is a thin film forming material formed on the semiconductor wafer (2), and (71 is sputtering).

Next, the operation will be explained.

After opening the vacuum R"1 (11) to atmospheric pressure and placing the semiconductor wafer (2) in a fixed position in the vacuum mfl+ with the thin film side up, the oil rotary pump (3a) and the cryopump ( 4a) to evacuate the vacuum chamber (1) to a high vacuum.Then, high-purity argon gas is pumped into the vacuum chamber (1).
) and use the vacuum pressure sensor 15+ and the vacuum pressure controller (7) to maintain a constant vacuum pressure in the vacuum N (11). The application causes a sputtering action and deposits the material of the target (6) onto the semiconductor wafer (2).

[Problem that the invention seeks to solve]

As mentioned above, conventional thin film forming equipment only detects the vacuum pressure during sputtering, so the inside of the vacuum W! (1) may be contaminated with gas other than high-purity argon gas due to leakage from the vacuum chamber (11). However, there are problems in that a thin film of poor quality may be formed on the surface of the semiconductor wafer (2).

This invention was made to solve the above-mentioned problem, and aims to provide a thin film forming apparatus capable of forming a high quality thin film.

[Means for solving m points between]

Thin film forming bag ff1F' according to the present invention: This bag is equipped with a gas component analysis bag T for analyzing gas components in a vacuum chamber.

[Effect]

The thin film forming apparatus according to the present invention uses a gas component analyzer to detect gas components in the vacuum chamber during thin film formation. can be canceled.

[Embodiments of the invention]

An embodiment of the present invention will be described below with reference to the drawings. 1st
In the figure, C8) is a gas component analyzer that analyzes the gas components in the vacuum chamber (1), and this gas component analyzer is connected to a cryopump (4b) attached to the exhaust port of the vacuum chamber (1). It is provided at the exhaust port between this cryopump (4b) and the vacuum chamber (1), and the exhaust port diameter is set to #.
! A differential pressure generator (9) that creates a difference between the vacuum pressure on the vacuum chamber (1) side and the vacuum pressure on the cryopump (4b) side by (4
b) a mass spectrometer sensor GO that senses the gas contained in the exhaust port between the mass spectrometer sensor GO and a mass spectrometer C1 that analyzes the components of the gas based on the sense of the mass spectrometer sensor 00;
1 liter, and an oil rotary pump (3b) attached to the cryopump (4b).

Next, the function and operation will be explained.

After opening the vacuum chamber (1) to atmospheric pressure, the semiconductor wafer (2) on which the thin film is to be formed is placed in a vacuum with the thin film forming surface facing up! f
1 (13). Next, the vacuum chamber (1) is evacuated to a vacuum pressure of about LO'τorr using the oil rotary horn (3a). Next, the cryopump (
41) to evacuate the vacuum chamber rl) to a vacuum pressure of about 10 Torr. Next, high-purity argon gas with a purity of about 99999% is introduced into the vacuum % (11). At this time, the vacuum sensor (5) and the vacuum pressure controller (
7) to control the inflow rate of high-purity argon gas and maintain the vacuum pressure in the vacuum chamber at about 10 Torr. Next, the output of sputtering ηt'6fA? A plasma is generated near the surface of the target (6) by applying it to the target (6), which is a twilight-forming material, and the wafer (2)
Deboss the target material onto the surface. The residue components during this sputtering are constantly detected using a gas component analyzer (8). Ordinary mass spectrometer port 11 x 10 Torr
Since it operates at a vacuum pressure of about r or less, the vacuum pressure is
It is not possible to detect gas components during sputtering, which are on the order of Torr. Therefore, in the example of the present invention, the vacuum chamber C1
) attached to f(ff1
Vacuum pressure of about -2 Torr and QG sensor on the mass spectrometer
A differential pressure generator (9) is installed to enable the generation of a differential pressure with the vacuum pressure of less than OTorr.

For this reason, part of the gas in the vacuum chamber [1] during sputtering constantly flows into the cryopump (4b) through the exhaust port, and the mass spectrometer sensor 00 installed during this exhaust gas (1) It became possible to detect the gas components in 71 times.

Therefore, if a gas component other than high-purity argon flows into the vacuum fi (1) during sputtering, τ! Five alarms are issued from the five alarms attached to each analyzer 01J, and the sputtering work is stopped. For this reason, a low-quality thin film mixed with impure gas or reacted with impure gas is no longer deposited on the substrate.

In the above embodiment, the cryopump (4,) (4b) was used as the high vacuum pump, but other high vacuum pumps such as a turbo molecular pump or an oil diffusion pump may be used.

Furthermore, in the above embodiments, a sputtering apparatus with one vacuum l (1) was described, but a sputtering apparatus with a plurality of vacuum chambers may be used.

Further, in the above embodiments, a sputtering device was described, but any device that forms a film in a vacuum chamber may be used. For example, the same effect can be obtained even if the present invention is applied to a vacuum evaporation device. O Also, in the above example, a gas component analysis bag! As (8),
Although the gas analyzer (111) is shown, the present invention is not limited to this, and other gas component analysis means are also suitable.

〔Effect of the invention〕

As described above, according to the present invention, the thin film forming apparatus is equipped with a gas component analyzer for analyzing the gas components in the vacuum chamber to constantly detect the gas components during thin 11fi formation, resulting in high quality This method has the advantage that a thin film of 100% can be formed on the wafer surface with good reproducibility.

[Brief explanation of drawings]

FIG. 1 is a sectional view showing a sputtering apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view showing a conventional sputtering apparatus. In the figure, (1) is a vacuum chamber, C2) is a thin film forming body, (
8) is a gas component analyzer. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa f52 Figure 2?

Claims (3)

[Claims] (1) A thin film forming apparatus comprising: a vacuum chamber in which a thin film forming material and a thin film forming object are housed; and a gas component analyzer for analyzing gas components in the vacuum chamber. (2) The gas component analyzer includes a differential pressure generator attached to an exhaust port provided in a vacuum chamber, a pump attached to the exhaust port via this differential pressure generator, and the differential pressure generator and a mass spectrometer sensor connected to the mass spectrometer sensor, and a mass spectrometer sensor attached to the exhaust port through the pump to analyze the components of the gas between the differential pressure generator and the pump. A thin film forming apparatus according to claim 1. (3) The thin film forming apparatus according to claim 1 or 2, wherein the thin film forming object is a semiconductor wafer.