JPH10303114A - 液浸型露光装置 - Google Patents
液浸型露光装置Info
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- JPH10303114A JPH10303114A JP9121757A JP12175797A JPH10303114A JP H10303114 A JPH10303114 A JP H10303114A JP 9121757 A JP9121757 A JP 9121757A JP 12175797 A JP12175797 A JP 12175797A JP H10303114 A JPH10303114 A JP H10303114A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
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- Environmental & Geological Engineering (AREA)
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- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
置を提供する。 【解決手段】レチクルR上に描画されたパターンPaを
ウエハW上に焼付転写する投影光学系PLを有し、該投
影光学系のウエハに最も近接したレンズ面Peとウエハ
Wとの間のワーキングディスタンスのうちの少なくとも
一部分を、露光光ILを透過する液体LQで満たした液
浸型露光装置において、ワーキングディスタンスの長さ
をLとし、露光光ILの波長をλとし、液体LQの屈折
率の温度係数をN(1/℃)としたとき、L≦λ/
(0.3×|N|)となるように形成したことを特徴と
し、また、液体LQとして、純水の表面張力を減少させ
又は純水の界面活性度を増大させる添加剤を純水に添加
したものを用いたことを特徴とする。
Description
されたパターンを投影光学系によってウエハに焼付ける
露光装置に関し、特に液浸型の露光装置に関する。
隔をワーキングディスタンスというが、従来の露光装置
の投影光学系のワーキングディスタンスは、空気で満た
されていた。このワーキングディスタンスは、オートフ
ォーカス光学系を介在させるなどの都合により、10m
m以上取るのが普通であった。他方、ウエハに転写する
パターンについては、その微細化がますます望まれてお
り、そのためには露光波長の短波長化を図るか、あるい
は開口数の増大を図る必要がある。しかるに短波長の光
を透過するガラス材料の種類には限度があるから、ワー
キングディスタンスを液体で満たして開口数の増大を図
ることにより、露光パターンの微細化を図る液浸型の露
光装置が提案されている。
タンスに介在させた液体の温度分布によって、屈折率に
分布が生じるおそれがある。そこで液体の温度変化に起
因する結像性能の劣化への対策として、次のような技術
が提案されている。すなわち、(あ)液体の温度安定機
構によって温度の安定化を図るものとして、米国特許
4,346,164号の図3に開示された技術が提案さ
れており、加振撹拌機構によって温度の均一化を図るも
のとして、特開平6−124873号公報に開示された
技術が提案されている。また、(い)液体の温度モニタ
ー機構によって温度調節にフィードバックするものとし
て、同じく特開平6−124873号公報に温度、又は
屈折率を計測することが提案されている。
は、温度をどの程度安定させれば実用上問題ないかと言
った議論は成されておらず、実際には下記に示すよう
に、現実的とは言いがたい精度での温度コントロールが
必要になる。また、(い)についても、結像性能に最も
影響するのが液体の温度不均一であることを考慮する
と、有効な対策とは言い難い。このように液浸型露光装
置に関する従来公知の技術においては、ワーキングディ
スタンスのような投影光学系の光学パラメーターそのも
のについての制約に言及した例はなく、液浸型の特殊事
情が考慮されているとは言えない状況であった。したが
って本発明は、ワーキングディスタンスを満たす液体の
温度制御を容易にして、結像性能の劣化を招くことのな
い液浸型露光装置を提供することを課題とする。
するためになされたものであり、すなわち、レチクル上
に描画されたパターンをウエハ上に焼付転写する投影光
学系を有し、該投影光学系のウエハに最も近接したレン
ズ面とウエハとの間のワーキングディスタンスのうちの
少なくとも一部分を、露光光を透過する液体で満たした
液浸型露光装置において、ワーキングディスタンスの長
さをLとし、露光光の波長をλとし、液体の屈折率の温
度係数をN(1/℃)としたとき、 L≦λ/(0.3×|N|) となるように形成したことを特徴とする液浸型露光装置
であり、また、前記液体として、純水の表面張力を減少
させ又は純水の界面活性度を増大させる添加剤を純水に
添加したものを用いたことを特徴とする液浸型露光装置
である。
系の先端のガラス面から結像面までの距離、すなわちワ
ーキングディスタンスをLとし、ワーキングディスタン
スLを満たす媒質の温度分布の幅をΔTとし、この温度
分布ΔTに起因する結像波面の収差をΔFとし、液体の
屈折率の温度係数をNとすると、近似的に以下の式
(1)が成立する。 ΔF=L×|N|×ΔT ‥‥(1)
化を図るためにいかにコントロールしようとも、ΔT=
0.01℃程度の温度分布が存在すると想定される。し
たがって、結像波面収差ΔFは、少なくとも、 ΔF=L×|N|×0.01 ‥‥(1a) だけは存在する。ここでNは、屈折率の温度係数を1/
℃単位で表した値である。
きく異なり、例えば空気ではN=−9×10-7/℃であ
るのに対して、水の場合はN=−8×10-5/℃であ
り、100倍近い差がある。他方、縮小投影露光装置の
投影光学系のワーキングディスタンスLは、通常L>1
0mmであるが、L=10mmであるとしても、結像波
面収差ΔFは以下のようになる。 空気:ΔF=10mm×|−9×10-7/℃|×0.01℃ =0.09nm 水 :ΔF=10mm×|−8×10-5/℃|×0.01℃ =8.0nm
波長λの1/30以下が望ましく、すなわち、 ΔF≦λ/30 ‥‥(2) が成立することが好ましい。例えば波長193nmのA
rFエキシマレーザーを露光光として用いるときには、
ΔF<6.4nmが望ましい。ワーキングディスタンス
を満たす媒質が水の場合には、従来技術のようにワーキ
ングディスタンスLがL>10mmでは、媒質の温度分
布による結像波面収差の発生量が大きすぎて、実用上問
題を生ずることが分かる。
可能な温度安定性(温度分布)のもとに、浸液中の温度
分布によって生じる波面収差発生量が露光波長の1/3
0以下に抑えられた投影光学系を搭載した液浸型露光装
置が得られる。以上のように本発明においては、温度分
布を持った媒質中を露光光が通過することで発生する波
面収差量が、温度分布量と媒質中の光路長の積に依存す
ることに着目し、光路長に上限を設けることにより、温
度分布に対する要求を緩和している。これにより実現可
能なレベルでの浸液の温度コントロールのもとで、液浸
型露光装置を実用に供することができる。
実施例を説明する。
による投影露光装置の全体構成を示し、ここでは、物体
側と像側の両側においてテレセントリックに構成された
円形イメージフィールドを有する縮小投影レンズ系PL
を介して、レチクルR上の回路パターンを半導体ウエハ
W上に投影しつつ、レチクルRとウエハWとを投影レン
ズ系PLに対して相対走査するレンズ・スキャン方式の
投影露光装置を示す。図1において照明系10は、波長
193nmのパルス光を放射するArFエキシマレーザ
光源(不図示)、その光源からのパルス光の断面形状を
整形するビームエクスパンダ(不図示)、その整形され
たパルス光を入射して2次光源像(複数の点光源の集ま
り)を生成するフライ・アイレンズ等のオプチカルイン
テグレータ(不図示)、その2次光源像からのパルス光
を均一な照度分布のパルス照明光にする集光レンズ系
(不図示)、そのパルス照明光の形状を走査露光時の走
査方向(Y方向)と直交した方向(X方向)に長い矩形
状に整形するレチクルブラインド(照明視野絞り、不図
示)、及びそのレチクルブラインドの矩形状の開口から
のパルス光ILを図1中のコンデンサーレンズ系12、
ミラー14と協働してレチクルR上にスリット状又は矩
形状の照明領域AIとして結像するためのリレー光学系
(不図示)とを含んでいる。
ロークで1次元方向に等速移動可能なレチクルステージ
16上に真空吸着(場合によっては静電吸着、機械締
結)される。レチクルステージ16は、図1においては
装置本体のコラム構造体19上を図中の左右(Y方向)
にスキャン移動するようにガイドされ、図の紙面と垂直
な方向(X方向)にも移動するようにガイドされる。そ
のレチクルステージ16のXY平面内での座標位置や微
小回転量は、レチクルステージ16の一部に取り付けら
れた移動鏡(平面鏡やコーナーミラー)MRrにレーザ
ビームを投射して、その反射ビームを受光するレーザ干
渉計システム17によって逐次計測される。そしてレチ
クルステージ制御器20は、干渉計システム17によっ
て計測されるXY座標位置に基づいてレチクルステージ
16を駆動するためのリニアモータやボイスコイル等の
モータ18を制御し、レチクルステージ16のスキャン
方向の移動と非スキャン方向の移動とを制御する。
14から射出された矩形状のパルス照明光ILがレチク
ルR上の回路パターン領域の一部を照射すると、その照
明領域AI内に存在するパターンからの結像光束が1/
4倍の縮小投影レンズ系PLを通して、ウエハWの表面
に塗布された感応性のレジスト層に結像投影される。そ
の投影レンズ系PLの光軸AXは、円形イメージフィー
ルドの中心点を通り、照明系10とコンデンサーレンズ
系12の各光軸とも同軸になるように配置されている。
また投影レンズ系PLは、波長193nmの紫外線に対
して高い透過率を有する石英と螢石の2種類の硝材で作
られた複数枚のレンズ素子で構成され、螢石は主に正の
パワーを持つレンズ素子に使われる。さらに投影レンズ
系PLの複数枚のレンズ素子を固定する鏡筒の内部は、
波長193nmのパルス照明光の酸素による吸収を避け
るために窒素ガスに置換されている。このような窒素ガ
スによる置換は照明系10の内部からコンデンサーレン
ズ系12(又はミラー14)までの光路に対しても同様
に行われる。
ホルダテーブルWH上に保持される。このホルダテーブ
ルWHの外周部全体には一定の高さで壁部LBが設けら
れ、この壁部LBの内側には液体LQが所定の深さで満
たされている。そしてウエハWは、ホルダテーブルWH
の内底部の窪み部分に真空吸着される。またホルダテー
ブルWHの内底部の周辺には、ウエハWの外周を所定の
幅で取り囲むような環状の補助プレート部HRSが設け
られている。この補助プレート部HRSの表面の高さ
は、ホルダテーブルWH上に吸着された標準的なウエハ
Wの表面の高さとほぼ一致するように定められている。
は、フォーカス・レベリングセンサーの検出点がウエハ
Wの外形エッジの外側に位置するような場合の代替のフ
ォーカス検出面として利用されることである。また補助
プレート部HRSは、ウエハW上のショット領域とレチ
クルR上の回路パターンとを相対的に位置合わせすると
きに使われるアライメントセンサーのキャリブレーショ
ンや、ショット領域を走査露光するときに使われるフォ
ーカス・レベリングセンサーのキャリブレーションにも
兼用可能である。ただしアライメントセンサーやフォー
カス・レベリングセンサーのキャリブレーションは、補
助プレート部HRSと個別に設けられた専用の基準マー
ク板を使う方が望ましい。この場合、基準マーク板も液
浸状態で投影レンズ系PLの投影像面とほぼ同一の高さ
になるようにホルダテーブルWH上に取り付けられ、ア
ライメントセンサーは基準マーク板上に形成された各種
の基準マークを液浸状態で検出することになる。なお、
テーブル上の基準マーク板を使ってフォーカスセンサー
のシステム・オフセットをキャリブレーションする方法
の一例は、例えば米国特許4,650,983号に開示
され、各種アライメントセンサーのキャリブレーション
方法の一例は、例えば米国特許5,243,195号に
開示されている。
投影レンズ系PLの先端部を液体LQ内に浸けるので、
少なくともその先端部は防水加工されて鏡筒内に液体が
染み込まないような構造となっている。さらに、投影レ
ンズ系PLの先端のレンズ素子の下面(ウエハWとの対
向面)は平面、又は曲率半径が極めて大きい凸面に加工
され、これにより、走査露光時にレンズ素子の下面とウ
エハWの表面との間で生じる液体LQの流れをスムーズ
にできる。さらに本実施例では、後で詳細に説明する
が、液浸状態における投影レンズ系PLの最良結像面
(レチクル共役面)が、先端のレンズ素子の下面から約
2〜1mmの位置に形成されるように設計されている。
従って、先端のレンズ素子の下面とウエハWの表面との
間に形成される液体層の厚みも2〜1mm程度になり、
これによって液体LQの温度調整の制御精度が緩和され
るとともに、その液体層内の温度分布ムラの発生も抑え
ることが可能となる。
系PLの光軸AXに沿ったZ方向への並進移動(本実施
例では粗移動と微動)と、光軸AXに垂直なXY平面に
対する傾斜微動とが可能なように、XYステージ34上
に取り付けられる。このXYステージ34はベース定盤
30上をXY方向に2次元移動し、ホルダテーブルWH
はXYステージ34上に3つのZ方向用のアクチュエー
タ32A、32B、32Cを介して取り付けられる。各
アクチュエータ32A,B,Cは、ピエゾ伸縮素子、ボ
イスコイルモータ、DCモータとリフト・カムの組合わ
せ機構等で構成される。そして3つのZアクチュエータ
を同じ量だけZ方向に駆動させると、ホルダテーブルW
HをZ方向(フォーカス方向)に平行移動させることが
でき、3つのZアクチュエータを互いに異なる量だけZ
方向に駆動させると、ホルダテーブルWHの傾斜(チル
ト)方向とその量とが調整できる。
送りネジを回転させるDCモータや非接触に推力を発生
させるリニアモータ等で構成される駆動モータ36によ
って行われる。この駆動モータ36の制御は、ホルダテ
ーブルWHの端部に固定された移動鏡MRwの反射面の
X方向、Y方向の各位置変化を計測するレーザ干渉計3
3からの計測座標位置を入力するウエハステージ制御器
35によって行われる。なお、駆動モータ36をリニア
モータとしたXYステージ34の全体構成としては、例
えば特開平8−233964号公報に開示された構成を
使ってもよい。
ーキングディスタンスが小さく、投影レンズPLの先端
のレンズ素子とウエハWとの間の2〜1mm程度の狭い
間隔に液体LQを満たすことから、斜入射光方式のフォ
ーカスセンサーの投光ビームを投影レンズ系PLの投影
視野に対応したウエハ面上に斜めに投射することが難し
い。このため本実施例では図1に示す通り、オフ・アク
シス方式(投影レンズ系PLの投影視野内にフォーカス
検出点がない方式)のフォーカス・レベリング検出系
と、オフ・アクシス方式でウエハW上のアライメント用
のマークを検出するマーク検出系とを含むフォーカス・
アライメントセンサーFADを投影レンズ系PLの鏡筒
の下端部周辺に配置する。
ADの先端に取り付けられた光学素子(レンズ、ガラス
板、プリズム等)の下面は、図1に示すように液体LQ
中に配置され、その光学素子からはアライメント用の照
明ビームやフォーカス検出用のビームが液体LQを通し
てウエハW(又は補助プレート部HRS)の表面上に照
射される。そしてフォーカス・レベリング検出系はウエ
ハWの表面の最良結像面に対する位置誤差に対応したフ
ォーカス信号Sfを出力し、マーク検出系はウエハW上
のマークの光学的な特徴に対応した光電信号を解析し
て、マークのXY位置又は位置ずれ量を表すアライメン
ト信号Saを出力する。
メント信号Saは主制御器40に送出され、主制御器4
0はフォーカス信号Sfに基づいて3つのZアクチュエ
ータ32A,B,Cの各々を最適に駆動するための情報
をウエハステージ制御器35に送出する。これによって
ウエハステージ制御器35は、ウエハW上の実際に投影
されるべき領域に対するフォーカス調整やチルト調整が
行われるように、各Zアクチュエータ32A,B,Cを
制御する。
aに基づいて、レチクルRとウエハWとの相対的な位置
関係を整合させるためのXYステージ34の座標位置を
管理する。さらに主制御器40は、ウエハW上の各ショ
ット領域を走査露光する際、レチクルRとウエハWとが
Y方向に投影レンズ系PLの投影倍率と等しい速度比で
等速移動するように、レチクルステージ制御器20とウ
エハステージ制御器35とを同期制御する。
センサーFADは投影レンズ系PLの先端部周辺の1ケ
所にだけしか設けられていないが、投影レンズ系PLの
先端部を挟んでY方向に2ケ所、X方向に2ケ所の計4
ケ所に設けておくのがよい。また図1中のレチクルRの
上方には、レチクルRの周辺部に形成されたアライメン
ト用のマークとウエハW上のアライメント用のマーク
(又は基準マーク板上の基準マーク)とを投影レンズ系
PLを通して同時に検出して、レチクルRとウエハWと
の位置ずれを高精度に計測するTTR(スルーザレチク
ル)方式のアライメントセンサー45が設けられてい
る。そしてこのTTRアライメントセンサー45からの
位置ずれ計測信号は主制御器40に送出され、レチクル
ステージ16やXYステージ34の位置決めに使われ
る。
34をY方向に等速移動させて走査露光を行うものであ
るが、その走査露光時のレチクルR、ウエハWのスキャ
ン移動とステップ移動とのスケジュールを図2を参照し
て説明する。図2において、図1中の投影レンズ系PL
は、前群レンズ系LGaと後群レンズ系LGbとで代表
的に表してあり、その前群レンズ系LGaと後群レンズ
系LGbとの間には、投影レンズ系PLの射出瞳Epが
存在する。また図2に示したレチクルRには、投影レン
ズ系PLの物体側の円形イメージフィールドの直径寸法
よりも大きな対角長を有する回路パターン領域Paが、
遮光帯SBによって区画された内側に形成されている。
ルRを例えばY軸に沿った負方向に一定速度Vrでスキ
ャン移動させつつ、ウエハWをY軸に沿った正方向に一
定速度Vwでスキャン移動させることによって、ウエハ
W上の対応したショット領域SAaに走査露光される。
このとき、レチクルRを照明するパルス照明光ILの領
域AIは、図2に示すようにレチクル上の領域Pa内で
X方向に伸びた平行なスリット状又は矩形状に設定さ
れ、そのX方向の両端部は遮光帯SB上に位置する。
光照明領域AIに含まれる部分パターンは、投影レンズ
系PL(レンズ系LGa、LGb)によってウエハW上
のショット領域SAa内の対応した位置に像SIとして
結像される。そしてレチクルR上のパターン領域Paと
ウエハW上のショット領域SAaとの相対走査が完了す
ると、ウエハWは例えばショット領域SAaの隣りのシ
ョット領域SAbに対する走査開始位置にくるように、
一定量だけY方向にステップ移動される。このステップ
移動の間、パルス照明光ILの照射は中断される。次
に、レチクルRの領域Pa内のパターンの像がウエハW
上のショット領域SAbに走査露光されるように、レチ
クルRをパルス光照明領域AIに対してY軸の正方向に
一定速度Vrで移動させつつ、ウエハWを投影像SIに
対してY軸の負方向に一定速度Vwで移動させること
で、ショット領域SAb上に電子回路のパターン像が形
成される。なお、エキシマレーザ光源からのパルス光を
走査露光に用いる技術の一例は、例えば米国特許4,9
24,257号に開示されている。
は、レチクルR上の回路パターン領域の対角長が投影レ
ンズ系PLの円形イメージフィールドの直径よりも小さ
い場合、照明系10内のレチクルブラインドの開口の形
状や大きさを変えて、照明領域AIの形状をその回路パ
ターン領域に合わせると、図1の装置をステップ・アン
ド・リピート方式のステッパーとして使うことができ
る。この場合、ウエハW上のショット領域を露光してい
る間は、レチクルステージ16とXYステージ34とを
相対的に静止状態にしておく。しかしながらその露光中
にウエハWが微動するときは、その微動をレーザ干渉計
システム33で計測して投影レンズ系PLに対するウエ
ハWの微小な位置ずれ分をレチクルR側で追従補正する
ように、レチクルステージ16を微動制御すればよい。
またレチクルブラインドの開口の形状や大きさを変える
場合は、開口形状やサイズの変更に合せて、レチクルブ
ラインドに達する光源からのパルス光を調整後の開口に
見合った範囲に集中させるようなズームレンズ系を設け
てもよい。
Iの領域はX方向に延びたスリット状又は矩形状に設定
されているため、走査露光中のチルト調整は本実施例で
は専らY軸回りの回転方向、すなわち走査露光の方向に
対してローリング方向にのみ行われる。もちろん、投影
像SIの領域の走査方向の幅が大きく、ウエハ表面の走
査方向に関するフラットネスの影響を考慮しなけばなら
ないときは、当然にX軸回りの回転方向、すなわちピッ
チング方向のチルト調整も走査露光中に行われる。
あるホルダテーブルWH内の液体LQの状態について、
図3を参照して説明する。図3は投影レンズ系PLの先
端部からホルダテーブルWHまでの部分断面を表す。投
影レンズ系PLの鏡筒内の先端には、下面Peが平面で
上面が凸面の正レンズ素子LE1が固定されている。こ
のレンズ素子LE1の下面Peは、鏡筒金物の先端部の
端面と同一面となるように加工(フラッシュサーフェス
加工)されており、液体LQの流れが乱れることを抑え
ている。さらに投影レンズ系PLの鏡筒先端部で液体L
Q内に浸かる外周角部114は、例えば図3のように大
きな曲率で面取り加工されており、液体LQの流れに対
する抵抗を小さくして不要な渦の発生や乱流を抑える。
また、ホルダテーブルWHの内底部の中央には、ウエハ
Wの裏面を真空吸着する複数の突出した吸着面113が
形成されてい。この吸着面113は、具体的には1mm
程度の高さでウエハWの径方向に所定のピッチで同心円
状に形成された複数の輪帯状ランド部として作られる。
そして各輪帯状ランド部の中央に刻設された溝の各々
は、テーブルWHの内部で真空吸着用の真空源に接続さ
れる配管112につながっている。
投影レンズ系PLの先端のレンズ素子LE1の下面Pe
とウエハW(又は補助プレート部HRS)の表面とのベ
ストフォーカス状態での間隔Lは、2〜1mm程度に設
定される。そのため、ホルダテーブルWH内に満たされ
る液体LQの深さHqは、間隔Lに対して2〜3倍程度
以上であればよく、従ってホルダテーブルWHの周辺に
立設された壁部LBの高さは数mm〜10mm程度でよ
い。このように本実施例では、投影レンズ系PLのワー
キングディスタンスとしての間隔Lを極めて小さくした
ため、ホルダテーブルWH内に満たされる液体LQの総
量も少なくて済み、温度制御も容易になる。
容易で取り扱いが簡単な純水を用いる。ただし本実施例
では、液体LQの表面張力を減少させるとともに、界面
活性力を増大させるために、ウエハWのレジスト層を溶
解させず、且つレンズ素子の下面Peの光学コートに対
する影響が無視できる脂肪族系の添加剤(液体)をわず
かな割合で添加しておく。その添加剤としては、純水と
ほぼ等しい屈折率を有するメチルアルコール等が好まし
い。このようにすると、純水中のメチルアルコール成分
が蒸発して含有濃度が変化しても、液体LQの全体とし
ての屈折率変化を極めて小さくできるといった利点が得
られる。
して一定の精度で制御されるが、現在比較的容易に温度
制御できる精度は±0.01℃程度である。そこでこの
ような温調精度のもとでの現実的な液浸投影法を考えて
みる。一般に空気の屈折率の温度係数Naは約−9×1
0-7/℃であり、水の屈折率の温度係数Nqは約−8×
10-5/℃であり、水の屈折率の温度係数Nqの方が2
桁程度も大きい。一方、ワーキングディスタンスをLと
すると、ワーキングディスタンスLを満たす媒質の温度
変化(温度むら)量ΔTに起因して生じる結像の波面収
差量ΔFは近似的に次式で表される。 ΔF=L・|N|・ΔT
影露光の場合、ワーキングディスタンスLを10mm、
温度変化量ΔTを0.01℃としたときの波面収差量Δ
Fairは以下のようになる。 ΔFair=L・|Na|・ΔT≒0.09nm また同じワーキングディスタンスLと温度変化量ΔTの
下で、液浸投影法を適用した場合に得られる波面収差量
ΔFlqは以下のようになる。 ΔFlq=L・|Nq|・ΔT≒8nm
/30ないしは1/50〜1/100程度が望ましいと
されているから、ArFエキシマレーザを使った場合に
許容される最大の波面収差量ΔFmaxは、λ/30ない
しはλ/50〜λ/100程度の6.43ないしは3.
86〜1.93nmに定められ、望ましくはλ/100
の1.93nm以下に定められる。ところで空気と水の
0℃における各熱伝導率は、空気で0.0241W/m
Kとなり、水で0.561W/mKとなり、水の方が熱
伝導が良く、水中に形成される光路内での温度むらは空
気中のそれよりも小さくでき、結果的に液体中で発生す
る屈折率の揺らぎも小さくできる。しかしながら、式
(3)に表したようにワーキングディスタンスLが10
mm程度の場合、温度変化量ΔTが0.01℃であった
としても、発生する波面収差量ΔFlqは許容収差量ΔF
maxを大きく越えてしまう。
Fmaxを考慮した温度変化量ΔTとワーキングディスタ
ンスLとの関係は、 ΔFmax=λ/30≧L・|Nq|・ΔT ないしは、 ΔFmax=λ/100≧L・|Nq|・ΔT となる。ここで、想定される温度変化量ΔTを0.01
℃、波長λを193nm、そして液体LQの屈折率変化
量Nqを−8×10-5/℃とすると、必要とされるワー
キングディスタンス(液体層の厚み)Lは、8mmない
しは2.4mm以下となる。望ましくは、そのワーキン
グディスタンスLを液体LQがスムーズに流れる範囲内
で2mmよりも小さくした方がよい。以上のように本実
施例のように構成することにより、液体LQの温度制御
が容易になるとともに、液体層内の温度変化に起因した
波面収差変化で生じる投影像の劣化が抑えられ、極めて
高い解像力でレチクルRのパターンを投影露光すること
が可能となる。
ついて図4を参照して説明する。本実施例は、先の第1
の実施例にも同様に適用可能な液体LQの温度制御法と
ウエハWの交換時の液体LQの取り扱い方法とを示す。
従って、図4において先の図1,3中の部材と同じもの
には同一の符号をつけてある。さて、図4においてホル
ダテーブルWHの内底部に円形の凹部として形成された
ウエハ載置部には複数の吸着面113が形成されてい
る。そして円形のウエハ載置部の周辺には、液体LQの
供給と排出に用いる溝51が環状に形成され、その溝5
1の一部は、テーブルWH内に形成された通路52を介
して、外部のパイプ53につながれている。またホルダ
テーブルWH内のウエハ載置部の直下と補助プレート部
HRSの直下には、ペルチェ素子等の温度調整器50
A,50Bが埋め込まれ、ホルダテーブルWH上の適当
な位置(望ましくは複数ケ所)には温度センサー55が
取り付けられて、液体LQの温度が精密に検出される。
そして温度調整器50A,50Bは、温度センサー55
によって検出される液体LQの温度が一定値になるよう
に、制御器60によって制御される。
を介して、液体供給ユニット64と排出ポンプ66に接
続されている。切り替えバルブ62は、制御器60から
の指令に応答して、液体供給ユニット64からの液体L
Qをパイプ53に供給する流路か、パイプ53からの液
体LQを排出ポンプ66を介して供給ユニット64に戻
す流路かを切り替えるように動作する。また供給ユニッ
ト64内には、ホルダテーブルWH上の液体LQの全体
を収容可能なリザーブタンク(不図示)と、このタンク
から液体LQを供給するポンプ64Aと、そのポンプ6
4Aを含めタンク内の液体LQ全体を一定の温度に保つ
温調器64Bとが設けられている。さらに以上の構成に
おいて、バルブ62、ポンプ64A、温調器64B、排
出ポンプ66の各動作は、制御器60によって統括的に
制御される。
がホルダテーブルWHの載置部上に搬送され、プリアラ
イメントされた状態で複数の吸着面113上に載置され
ると、図3に示した真空吸着用の配管112を介して減
圧固定される。この間、温度調整器50A,50Bは、
目標となる温度に制御され続けている。そしてウエハW
の真空吸着が完了すると、切り替えバルブ62がクロー
ズ位置から供給ユニット64側に切り替わり、温度調整
された液体LQがポンプ64Aの作動によって、パイプ
53、通路52、溝51を介してホルダテーブルWHの
壁部LBの内部に一定量だけ注入されて、切り替えバル
ブ62がクローズ位置に戻る。その後、ウエハWに対す
る露光が完了すると、直ちに切り替えバルブ62がクロ
ーズ位置から排出ポンプ66側に切り替わり、排出ポン
プ66の作動によってテーブルWH上の液体LQが溝5
1、パイプ53を介して供給ユニット64のリザーブタ
ンク内に戻される。そのタンク内に戻された液体LQ
は、リザーブタンク内の温度センサーからの検出信号に
基づいて、次のウエハが準備できるまで温調器64Bに
よって精密に温度制御される。
の液体LQはホルダテーブルWH内の温度調整器50
A,50Bによって温度制御され、ウエハ交換動作中は
液体LQを供給ユニット64内に回収して温度制御する
ようにしたので、ウエハ交換が大気中で可能になるとと
もに、液体LQの大きな温度変化を防止できると云った
利点がある。さらに本実施例によれば、ウエハ交換後に
ホルダテーブルWHに注入される液体LQは、たとえ設
定温度に対して僅か(例えば0.5℃程度)に異なって
いたとしても、液体層の深さHq(図3参照)が総じて
浅いために比較的早く設定温度に到達し得るから、温度
安定を待つ時間も短縮され得る。
を参照して説明する。図5は先の図3の構成を改良した
ホルダテーブルWHの部分断面を表し、この実施例のホ
ルダテーブルWHは、ウエハWを保持するウエハチャッ
ク90と、フォーカス・レベリングのためのZ方向移動
とチルト移動を行うZLステージ82とに別れており、
ZLステージ82上にウエハチャック90が載置されて
いる。そしてZLステージ82は、3つのZアクチュエ
ータ32A,32C(32Bは省略)を介して、XYス
テージ34上に設けられる。そしてチャック90には、
図1、3、4と同様に、壁部LB、補助プレート部HR
S、真空吸着用の配管112、液体LQの供給、排出用
のパイプ53(図4参照)に接続される通路53A,5
3Bがそれぞれ形成されている。ただし、通路53Aは
ウエハチャック90内部の補助プレート部HRSの周辺
部分につながっており、通路53Bはウエハチャック9
0内底部のウエハ載置部の最も低い部分につながってい
る。このようにウエハチャック90内の複数ケ所に液体
排出、注入用の通路を形成しておくと、液体の出し入れ
が迅速に行われる。
部に3つ(2つのみ図示)の貫通孔91が形成され、こ
の貫通孔91を通って上下動する3つ(2つのみ図示)
のセンターアップピン83が、上下動駆動機構85の上
に設けられている。この上下動駆動機構85は、XYス
テージ34側に固定される。その3つのセンターアップ
ピン83は、ウエハ交換時にチャック90上のウエハW
を載置面から一定量だけ持ち上げたり、ウエハWを載置
面上に下ろしたりするためのものであり、ウエハWがチ
ャック90の載置面に真空吸着された状態では、図5に
示すようにセンターアップピン83の先端面は、チャッ
ク90の載置面よりも下がった位置に設定される。
Lの先端部には、サブ鏡筒80の先端に光軸AXと垂直
に固定された石英の平行平板CGが取り付けられ、した
がって先端のレンズ素子LE1(平凸レンズ)が液体L
Qに浸かることがないように構成されている。本実施例
では、この平行平板CGの下面とウエハWの表面との間
隔が、見かけ上のワーキングディスタンスとなり、先の
実施例と同様に2mm以下に設定される。またサブ鏡筒
80の平行平板CGとの取付け面は防水加工され、サブ
鏡筒80の内部には窒素ガスが充填されている。
平板CGを設けるようにすると、投影レンズ系PLの実
質的なバックフォーカス距離(屈折力を持つ先端の光学
素子から像面までの距離)が10〜15mm程度であっ
ても、容易にワーキングディスタンスLを1〜2mm程
度にして液体の温度変化の影響を低減させた液浸投影法
が実現できる。また、平行平板CGは後付けで設けるこ
とができるから、平行平板CGの表面の一部分を波長の
数分の1程度のオーダーで研磨することにより、投影像
内で生じている局所的な微少歪曲収差(あるいはランダ
ムなディストーション)を容易に修正することが可能と
なる。すなわち、平行平板CGは投影レンズ系PLの最
先端のレンズ素子を液体から保護する窓としての機能
と、ディストーション補正板としての機能とを兼ね備え
ることになる。なお、別の見方をすれば平行平板CGを
含めて投影レンズ系PLの結像性能が保証されているの
で、平行平板CGが投影レンズ系PLの最先端の光学素
子であることに変わりはない。
いて図6を参照して説明する。本実施例は、先の図5に
示した実施例とも関連し、ワーキングディスタンスを極
めて小さくした投影光学系を液浸投影露光法に使用した
場合のウエハ交換に関するものである。図6において、
投影レンズ系PLの鏡筒の下端部には、図1に示したレ
ーザ干渉計33からの参照用ビームBSrを受けて反射
する参照ミラーML(X方向用とY方向用)が固定され
ている。そしてレーザ干渉計33からの測長用ビームB
Smは、先の図5に示したようなZLステージ82の端
部に固定された移動鏡MRwに投射され、その反射ビー
ムはレーザ干渉計33に戻り、参照用ビームBSrの反
射ビームと干渉して移動鏡MRwの反射面の座標位置、
すなわちウエハWのX,Y方向の座標位置が、参照ミラ
ーMLを基準として計測される。さて、本実施例におい
ても、ZLステージ82は3つのZアクチュエータ32
A,32B(32Cは省略)を介してXYステージ34
上に取り付けられ、Z方向とチルト方向とに移動可能と
なっている。ただし、ZLステージ82は、その周辺の
3ケ所で板バネ84A,84B(84Cは省略)を介し
てXYステージ34と結合され、XYステージ34に対
する水平方向(XY面内)の剛性が極めて大きくなるよ
うに支持される。
エハチャック90がZLステージ82上に設けられる
が、図5と異なる点は、ウエハチャック90を複数のZ
方向の駆動機構88A,88Bによって比較的に大きな
ストローク(10〜15mm程度)でZLステージ82
に対してZ方向に移動する構成にしたことである。この
駆動機構88A,88Bは、フォーカス・レベリングの
ためのZアクチュエータ32A,B,Cと異なり、ウエ
ハチャック90をそのストロークの両端間で移動させる
だけでよく、エア・シリンダやリンク機構等を使った簡
単なエレベーション機能でよい。さらに図6の実施例で
は、先の図5に示したセンターアップピン83がXYス
テージ34上に上下動することなく固定されている。そ
して図6のようにウエハチャック90が最も上昇した状
態では、ウエハWの表面が投影レンズ系PLの先端の光
学素子の面から1〜2mm程度に設定され、センターア
ップピン83の先端面はウエハチャック90のウエハ載
置面よりもわずかに下側(2〜3mm程度)に下がって
いる。
する露光動作時の状態を表し、その露光動作が完了する
と先の図4に示した液体LQの排出操作によってウエハ
チャック90上の液体LQを一時的に排出する。その
後、ウエハチャック90の真空吸着が解除されると、駆
動機構88A,88Bを作動させてウエハチャック90
を図6の位置から最も下にダウンさせる。これによって
ウエハWは3つのセンターアップピン83の先端面上に
載せ替えられるとともに、ウエハチャック90周辺の壁
部LBの上端面が投影レンズ系PLの先端面(図3中で
はレンズ素子LE1の下面Pe、図5中では平行平板C
Gの下面)よりも低くなるように位置決めされる。その
状態でXYステージ34をウエハ交換位置まで移動させ
ると、ウエハWは投影レンズ系PLの直下から引き出さ
れて、搬送用のアーム95の方に移動する。このときア
ーム95は、ウエハチャック90の壁部LBの上端面よ
りは高く、且つセンターアップピン83上のウエハWよ
りは低くなるような高さに設定された状態で、ウエハW
の下側に入り込む。それからアーム90はウエハWを上
方向にわずかに持ち上げつつ真空吸着を行い、所定のア
ンロード位置に向けてウエハWを搬送する。ウエハWの
搬入は、以上のシーケンスとは全く逆に行われる。
計33が参照ビームBSrを投影レンズ系PLの参照ミ
ラーMLに投射するような方式の場合、参照ビームBS
rの光路の直下に液体LQのプールが広がっているた
め、その液体LQの飽和蒸気の上昇によって参照ビーム
BSrの光路に揺らぎを与えることが考えられる。そこ
で本実施例では、参照ビームBSrの光路と液体LQと
の間にカバー板87を配置し、液体LQから上昇する蒸
気流を遮断して参照ビームBSrの光路で発生する揺ら
ぎを防止する。
ビームBSrの光路をより安定にするために、光路と交
差する方向に温度制御された清浄な空気を送風してもよ
い。この場合、カバー板87は光路空調用の空気が直接
液体LQに吹き付けられることを防止する機能も備える
ことになり、液体LQの不要な蒸発を低減させることが
できる。また、単なるカバー板87に代えて、参照ビー
ムBSrの光路全体を遮風筒で覆う構成にしてもよい。
7(A),(B)を参照して説明する。本実施例は先の
図1に示したホルダテーブルWHの構造に、図5に示し
たセンターアップ機構(ピン83、Z駆動部85)を組
合わせたものであり、ウエハ交換を簡単にするようにホ
ルダテーブルWHを改良したものである。そして図7
(B)はその改良されたホルダテーブルWHの平面を表
し、図7(A)は図7(B)中の7A矢視の断面を表
す。その図7(A),(B)から分かるように、ホルダ
テーブルWHは、XYステージ34上に3つのZアクチ
ュエータ32A、32C(32Bは省略)を介して保持
され、ホルダテーブルWHの中央付近には3つの貫通孔
91が設けられている。この貫通孔91には、駆動部8
5によって上下動するセンターアップピン83が通る。
の最下端面の高さは、そのままでは補助プレート部HR
S(ウエハW)の表面から2mm程度しか離れていな
い。さらにホルダテーブルWHの周辺に設けられた壁部
LBの上端は投影レンズ系PLの最下端面よりも高い。
従って、ウエハ交換のためにそのままXYステージ34
を移動させて投影レンズ系PLの直下からウエハを引き
出すように構成した場合、補助プレート部HRSの一部
分の幅が投影レンズ系PLの鏡筒の直径寸法程度必要と
なり、液体LQが注入されるホルダテーブルWHの内容
積を大きくすることになる。
ルダテーブルWHの壁部LBの一部を切り欠いて、そこ
に開閉自在な液密ドア部DBを設けた。この液密ドア部
DBは、液体LQが注入されている間は常に図7
(A),(B)のように壁部LBの切り欠き部を液密状
態で閉じており、液体LQがホルダテーブルWH上から
排出されると、図7(A)中の破線のように開くように
なっている。その液密ドア部DBは、開いた状態では補
助プレート部HRSの表面の高さよりも若干低くなるよ
うに設定されている。また液密ドア部DBの内壁と接す
るホルダテーブルWH本体側の壁部分(壁部LBの切り
欠き部等)には、図7(B)のように液密性を確実にす
るOリングOLが適宜の位置に設けられている。
ルWH上のウエハを交換する場合は、まずホルダテーブ
ルWH内の液体LQを排出してから、液密ドア部DBを
開く。その後、XYステージ34を図7中で右側に移動
させると、ウエハは投影レンズ系PLの直下から引き出
されることになる。このとき、投影レンズ系PLは丁度
開いた液密ドア部DBの上方空間に位置する。それから
センターアップピン83を上昇させてウエハを壁部LB
よりも高く持ち上げれば、ウエハは容易に交換すること
ができる。
周囲を取り囲む壁部LBの直径を最小にすることが可能
となり、ホルダテーブルWH内に満たされる液体LQの
総量を最小限に抑えることが可能となり、液体LQの温
度管理が容易になるだけでなく、液体LQの注入排出時
間も最小になるといった利点がある。なお、前記第4の
実施例の構成のときには、ウエハチャックが下降するか
ら特に液密ドア部を設ける必要はないが、第4の実施例
の構成において、なおも液密ドア部を設けても良い。
例を示し、この実施例では下部容器7と上部容器8を用
いている。ウエハ3を載置するウエハホルダー3aは下
部容器7の内面底部に形成されており、下部容器7の上
面は上部容器8の底面によって密閉されており、下部容
器7の全容積は浸液7aによって完全に満たされてい
る。他方上部容器8にも浸液8aが満たされており、そ
の浸液8a内に投影光学系1の最終レンズ面1aが浸さ
れている。
容器7の一側面に設けた排出口5より温度調節器6に導
かれ、温度調節器6において温度調節を受けた後に、下
部容器7の他側面に設けた注入口4より下部容器7に戻
るように循環している。下部容器7内の複数箇所には温
度センサー(図示せず)が取り付けられており、温度調
節器6は温度センサーからの出力に基づいて、下部容器
7内の浸液7aの温度が一定となるように制御してい
る。また上部容器8内の浸液8aについても、同様の温
度調節機構が設けられている。
容器8を一体として移動することにより、ウエハ3を移
動している。他方、ウエハ3を収容した下部容器内の浸
液は実質的に密閉されているから、温度安定性の点で有
利であるだけでなく、浸液中の渦等の流れによる圧力分
布も発生しない。すなわち浸液中の圧力分布は、屈折率
の揺らぎとなり結像波面収差悪化の要因となるが、この
第6の実施例において圧力分布が問題になるのは、上部
容器8に満たされた浸液8aのみで、この部分の光路L
8を充分に短く形成することにより、ウエハ移動時の浸
液流れの影響を実用上問題にならないレベルまで緩和す
ることが出来る。
を一体として移動したが、下部容器7のみを移動し、上
部容器8を固定することもできる。この構成のときに
は、上部容器8内の浸液8aは完全に停止することにな
る。したがってワーキングディスタンスLのうちで、上
部容器8内の浸液8aの厚さL8よりも、下部容器7内
の浸液7aの厚さL7の方を十分に薄く形成することが
好ましい。
明したが、先の図1に示したように液浸投影露光時のワ
ーキングディスタンスは1〜2mm程度と極めて小さい
ため、ウエハWに対する焦点合せはオフ・アクシス方式
のフォーカス・アライメントセンサーFADを使うもの
とした。しかしながら、例えば米国特許4,801,9
77号、米国特許4,383,757号等に開示されて
いるように、投影レンズ系PLの投影視野内の周辺部を
介してフォーカス検出用のビームをウエハ上に投射して
ウエハ表面の高さ位置又は傾きを計測するTTL(スル
ーザレンズ)方式のフォーカス検出機構を設けてもよ
い。
ントセンサーFADは、オフ・アクシス方式でウエハW
上のアライメントマークを光学的に検出するものとした
が、このアライメントセンサーもレチクルRと投影レン
ズ系PLとを通してウエハW上のマークを検出する図1
中のTTRアライメントセンサー45の他に、投影レン
ズ系PLのみを通してウエハW上のマークを検出するT
TL方式のアライメントセンサーとしてもよい。さらに
本発明は、紫外線域(波長400nm以下)のもとで投
影露光する投影光学系を備えていれば、どのような構成
の露光装置であっても全く同様に適用し得る。
温度コントロールの範囲内で、充分な結像性能が保証さ
れた液侵型の露光装置が提供された。また、液侵型露光
装置におけるウエハのローディングとアンローディング
に適したウエハステージの構造も提供された。
装置の全体的な構成を示す図である。
の斜視図である。
部分断面図である。
液体供給システムとを模式的に示すブロック図である。
投影レンズ系付近の構造を示す部分断面図である。
投影レンズ系付近の構造を示す部分断面図である。
構造を示す(A)断面図と、(B)平面図である。
である。
ー 4…注入口 5…排出口 6…温度調節器 L…ワーキングディ
スタンス 10…照明系 12…コンデンサー
レンズ系 14…ミラー 16…レチクルステ
ージ 17…レーザ干渉計システム 18…モータ 19…コラム構造体 20…レチクルステ
ージ制御器 30…ベース定盤 32A、32B、3
2C…アクチュエータ 33…レーザ干渉計システム 34…XYステージ 35…ウエハステージ制御器 36…駆動モータ 40…主制御器 50A、50B…温
度調整器 51…溝51 52…通路 53…パイプ 53A、53B…通
路 55…温度センサー 60…制御器 62…切り替えバルブ 64…液体供給ユニ
ット 64A…ポンプ 64B…温調器 66…排出ポンプ66 80…サブ鏡筒 82…ZLステージ 83…センターアッ
プピン 84A、84B…板バネ 85…上下動駆動機
構 87…カバー板 88A,88B…駆
動機構 90…ウエハチャック 91…貫通孔 95…アーム 112…配管 113…吸着面 114…外周角部 IL…パルス照明光 AI…照明領域 R…レチクル Pa…回路パターン
領域 SB…遮光帯 PL…投影レンズ系 AX…光軸 LGa…前群レンズ
系 LGb…後群レンズ系 Ep…射出瞳 LE1…正レンズ素子 Pe…下面 CG…平行平板 W…ウエハ SAa、SAb…ショット領域 SI…投影像 WH…ホルダテーブル LB…壁部 LQ…液体 HRS…補助プレー
ト部 DB…液密ドア部 OL…Oリング FAD…フォーカス・アライメントセンサー MRr、MRw…移動鏡 ML…参照ミラー BSr…参照用ビーム BSm…測長用ビー
ム Sf…フォーカス信号 Sa…アライメント
信号
Claims (12)
- 【請求項1】レチクル上に描画されたパターンをウエハ
上に焼付転写する投影光学系を有し、該投影光学系のウ
エハに最も近接したレンズ面と前記ウエハとの間のワー
キングディスタンスのうちの少なくとも一部分を、露光
光を透過する液体で満たした液浸型露光装置において、 前記ワーキングディスタンスの長さをLとし、前記露光
光の波長をλとし、前記液体の屈折率の温度係数をN
(1/℃)としたとき、 L≦λ/(0.3×|N|) となるように形成したことを特徴とする液浸型露光装
置。 - 【請求項2】レチクル上に描画されたパターンをウエハ
上に焼付転写する投影光学系を有し、該投影光学系のウ
エハに最も近接したレンズ面と前記ウエハとの間のワー
キングディスタンスのうちの少なくとも一部分を、露光
光を透過する液体で満たした液浸型露光装置において、 前記液体として、純水の表面張力を減少させ又は純水の
界面活性度を増大させる添加剤を前記純水に添加したも
のを用いたことを特徴とする液浸型露光装置。 - 【請求項3】前記ワーキングディスタンスの長さLが2
mm以下である、請求項1又は2記載の液浸型露光装
置。 - 【請求項4】前記レチクルとウエハを前記投影光学系の
倍率に対応した速度比にて同期して等速に走査可能に配
置した、請求項1、2又は3記載の液浸型露光装置。 - 【請求項5】前記露光光として紫外域の光を用いた、請
求項1、2、3又は4記載の液浸型露光装置。 - 【請求項6】前記投影光学系の最もウエハ側の先端光学
素子のウエハ側の光学面を平面状に形成し、前記先端光
学素子を保持する鏡筒の下端面を前記光学面と同一平面
をなすように形成し、前記鏡筒の下端外周面に面取りを
施した、請求項1、2、3、4又は5記載の液浸型露光
装置。 - 【請求項7】前記先端光学素子が平行平板である、請求
項6記載の液浸型露光装置。 - 【請求項8】前記ウエハをホルダテーブルによって保持
し、前記液体によってワーキングディスタンスを満たす
ことができるように前記ホルダテーブルの上面外周に壁
部を立設し、前記ホルダテーブル内に前記液体を供給し
且つ回収できるように液体供給ユニットを設け、前記ホ
ルダテーブルと液体供給ユニットとの双方に温度調整器
を設けた、請求項1〜7のいずれか1項記載の液浸型露
光装置。 - 【請求項9】前記ウエハをウエハチャックによって保持
し、前記液体によってワーキングディスタンスを満たす
ことができるように前記ウエハチャックの上面外周に壁
部を立設し、前記ウエハチャックを貫通して少なくとも
3本のピンを設け、前記ウエハを前記ウエハチャックの
上方に持ち上げることができるように、前記ピンに昇降
駆動装置を取り付けた、請求項1〜7のいずれか1項記
載の液浸型露光装置。 - 【請求項10】前記ウエハをウエハチャックによって保
持し、前記液体によってワーキングディスタンスを満た
すことができるように前記ウエハチャックの上面外周に
壁部を立設し、前記ウエハチャックを貫通して少なくと
も3本のピンを設け、ウエハチャックの前記壁部の上端
を前記投影光学系の下端よりも低くすることができるよ
うに、前記ウエハチャックに昇降駆動装置を取り付け
た、請求項1〜7のいずれか1項記載の液浸型露光装
置。 - 【請求項11】前記壁部の一部分に開閉自在な液密ドア
部を設けることにより、投影光学系の下端部分との干渉
を回避した、請求項1〜10のいずれか1項記載の液浸
型露光装置。 - 【請求項12】前記投影光学系の側面に干渉計用のミラ
ーを取り付け、該ミラーに入射して反射する光束を前記
液体から発する蒸気より離隔するように防護手段を設け
た、請求項1〜11のいずれか1項記載の液浸型露光装
置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12175797A JP3747566B2 (ja) | 1997-04-23 | 1997-04-23 | 液浸型露光装置 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12175797A JP3747566B2 (ja) | 1997-04-23 | 1997-04-23 | 液浸型露光装置 |
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| Publication Number | Publication Date |
|---|---|
| JPH10303114A true JPH10303114A (ja) | 1998-11-13 |
| JP3747566B2 JP3747566B2 (ja) | 2006-02-22 |
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| Application Number | Title | Priority Date | Filing Date |
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|---|---|
| JP (1) | JP3747566B2 (ja) |
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