+

JPH0787129B2 - Substrate type resistance / temperature fuse composite - Google Patents

Substrate type resistance / temperature fuse composite

Info

Publication number
JPH0787129B2
JPH0787129B2 JP62017616A JP1761687A JPH0787129B2 JP H0787129 B2 JPH0787129 B2 JP H0787129B2 JP 62017616 A JP62017616 A JP 62017616A JP 1761687 A JP1761687 A JP 1761687A JP H0787129 B2 JPH0787129 B2 JP H0787129B2
Authority
JP
Japan
Prior art keywords
metal body
point metal
resistance
low melting
melting point
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP62017616A
Other languages
Japanese (ja)
Other versions
JPS63185002A (en
Inventor
充明 植村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uchihashi Estec Co Ltd
Original Assignee
Uchihashi Estec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uchihashi Estec Co Ltd filed Critical Uchihashi Estec Co Ltd
Priority to JP62017616A priority Critical patent/JPH0787129B2/en
Priority to KR870005332A priority patent/KR880009407A/en
Publication of JPS63185002A publication Critical patent/JPS63185002A/en
Priority to KR2019900019499U priority patent/KR910000806Y1/en
Publication of JPH0787129B2 publication Critical patent/JPH0787129B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H85/00Protective devices in which the current flows through a part of fusible material and this current is interrupted by displacement of the fusible material when this current becomes excessive
    • H01H85/02Details
    • H01H85/04Fuses, i.e. expendable parts of the protective device, e.g. cartridges

Landscapes

  • Fuses (AREA)
  • Parts Printed On Printed Circuit Boards (AREA)
  • Structure Of Printed Boards (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は基板型抵抗・温度ヒューズ合成体の改良に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement of a substrate-type resistance / thermal fuse composite.

(従来の技術) 回路の抵抗体が過電流により異常発熱すると、その抵抗
体近傍の他の回路部分までもが熱的に損傷するので、低
抗体近傍に温度ヒューズを設け、抵抗体が異常発熱する
以前の所定の発熱温度で温度ヒューズを溶断作動させ
て、回路の通電を遮断することが知られており、かかる
機能を営む回路部品として、本出願人においては、絶縁
基板の片面に所定パターンの膜導体を設け、温度ヒュー
ズエレメントとしてのフラックス塗布低融点金属体の膜
抵抗とをこの膜導体の途中に設け、同絶縁基板の片面に
絶縁層を被覆したものを提案した(実開昭63−97207号
公報参照)。
(Prior art) When a resistor in a circuit abnormally generates heat due to overcurrent, other circuit parts in the vicinity of the resistor are also thermally damaged. It is known that the thermal fuse is blown to operate at a predetermined heat generation temperature before it is cut off, and the circuit is turned off. As a circuit component having such a function, the applicant has a predetermined pattern on one surface of the insulating substrate. It was proposed that the film conductor of the above is provided and the film resistance of the flux-coated low melting point metal body as the temperature fuse element is provided in the middle of the film conductor, and one side of the insulating substrate is covered with an insulating layer (Actual exploitation 63 -97207).

この基板型抵抗・温度ヒューズ合成体においては、過電
流に基づく膜抵抗の発生熱で低融点金属体を溶融させ、
既に溶融しているフラックスで溶融低融点金属体の酸化
物を溶解・洗浄し、このフラックス共存下で溶融金属の
表面張力による球状化を促し、この球状化の進行により
溶融金属を分断させて、通電を遮断している。
In this substrate-type resistance / thermal fuse composite, the low melting metal body is melted by the heat generated by the film resistance due to the overcurrent,
Dissolve and wash the oxide of the molten low melting point metal body with the flux that has already melted, promote spheroidization by the surface tension of the molten metal in the presence of this flux, and divide the molten metal by the progress of this spheroidization, Power is cut off.

<発明が解決しようとする課題> この従来の基板型抵抗・温度ヒューズ合成体において
は、1箇の膜抵抗に対し1箇の温度ヒューズエレメント
を設けているが、温度ヒューズエレメントは、回路の使
用期間中のごく短時間、即ち、膜抵抗の異常発熱時のみ
に必要とされるものであり、1箇の膜抵抗に対し1箇の
温度ヒューズエレメントを設けることは、回路構成の複
雑化を招来することになる。
<Problems to be Solved by the Invention> In this conventional substrate-type resistance / thermal fuse composite, one thermal fuse element is provided for one membrane resistance. However, the thermal fuse element uses a circuit. It is required for a very short period of time, that is, only when the film resistance abnormally heats up. Providing one temperature fuse element for one film resistance leads to a complicated circuit configuration. Will be done.

また、基板型抵抗・温度ヒューズ合成体においては、溶
融低融点金属体の迅速・スムーズな球状化分断のため
に、低融点金属体へのフラックスの塗着が不可欠であ
り、このフラックスにおいては、金属酸化物を溶解する
強い活性力を有するが、従来の基板型抵抗・温度ヒュー
ズ合成体においては、フラックス塗着低融点金属体と膜
抵抗とを絶縁基板の同一両側に設けているので、フラッ
クスが膜抵抗に付着して膜抵抗の抵抗値がフラックスの
活性力のために変化する畏れがある。
Further, in the substrate type resistance / thermal fuse composite, it is indispensable to apply the flux to the low melting metal body in order to quickly and smoothly divide the molten low melting metal body into spheres. Although it has a strong activity to dissolve metal oxides, in the conventional substrate-type resistor / thermal fuse composite, the flux-coated low-melting-point metal body and the film resistor are provided on the same both sides of the insulating substrate. Is attached to the membrane resistance and the resistance value of the membrane resistance changes due to the activation force of the flux.

尤も、上記実開昭63−97207号公報記載の基板型抵抗・
温度ヒューズ合成体では、膜抵抗上にガラス層を塗布・
焼き付けているが、ガラスの塗布時に低融点金属体取付
部分(電極)にガラスが付着し、低融点金属体の取付に
支障が生じる畏れがある。
However, the board type resistor described in Japanese Utility Model Publication No. 63-97207
In the thermal fuse composite, apply a glass layer on the film resistor.
Although it is baked, there is a fear that the glass adheres to the low melting point metal body mounting portion (electrode) when the glass is applied, which hinders the mounting of the low melting point metal body.

本発明の目的は、二箇の抵抗体に対し一箇の温度ヒュー
ズエレメントを共用でき、しかも小型で良好な性能の基
板型抵抗・温度ヒューズ合成体を提供することにある。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a substrate-type resistance-temperature fuse composite which can share one thermal fuse element with two resistors and which is small in size and has good performance.

<課題を解決するための手段> 本発明に係る基板型抵抗・温度ヒューズ合成体は、絶縁
基板における片面の横幅のほぼ中央位置に、縦方向に間
隔を隔てて一対の電極が設けられ、これらの電極間に低
融点金属体が接続され、この低融点金属体上にフラック
ス層が設けられ、前記の各電極にリード線が接続され、
上記絶縁基板の他面に上記低融点金属体を通る縦方向線
を中心として左右対称の二箇の2端子膜抵抗が設けら
れ、上記絶縁基板の両面に絶縁層が設けられていること
を特徴とする構成である。
<Means for Solving the Problems> A substrate-type resistance / temperature fuse composite according to the present invention is provided with a pair of electrodes vertically spaced apart from each other at approximately the center of the width of one surface of an insulating substrate. A low melting point metal body is connected between the electrodes of, a flux layer is provided on the low melting point metal body, and a lead wire is connected to each of the electrodes,
Two two-terminal film resistors which are bilaterally symmetrical with respect to a vertical line passing through the low melting point metal body are provided on the other surface of the insulating substrate, and insulating layers are provided on both surfaces of the insulating substrate. This is the configuration.

(実施例) 以下、図面により本発明を説明する。(Example) Hereinafter, the present invention will be described with reference to the drawings.

第1図Aは本発明に係る基板型抵抗・温度ヒューズ合成
体を示す上面説明図、第1図Bは同合成体を示す裏面説
明図である。
FIG. 1A is a top view showing a substrate-type resistance / thermal fuse composite according to the present invention, and FIG. 1B is a back surface illustration showing the same composite.

第1図A並びに第1図Bにおいて、1は耐熱性並びに熱
良伝導性の絶縁基板、例えばセラミックス板である。2,
…は絶縁基板1における片面の横幅のほぼ中央位置に、
縦方向に間隔を隔てて設けられた一対の層状電極、3,…
は各電極2,…に接続したリード線である。4は電極間に
橋設した帯状の低融点金属体、5は低融点金属体上に設
けたフラックス層である。6,6は絶縁基板の他面に設け
られた二箇の2端子膜抵抗であり、抵抗ペースト(酸化
金属粉末とガラスフリットとの混合物)の印刷・焼き付
けにより形成してある。この2端子膜抵抗6,6は上記低
融点金属体を通る縦方向線Y−Yを中心として左右対称
に対称に設けられている。20,……は二端子膜抵抗の端
子となる電極、30,…はこれらの各電極に接続したリー
ド線である。この電極20,…並びに上記の電極2,…は、
導電ペースト(銀または銅粉末とガラスフリットとの混
合物)の印刷・焼き付けにより形成することができる。
7・7は、絶縁基板の両面に被覆した絶縁層、例えば加
熱硬化性エポキシ樹脂のモールド層である。
In FIGS. 1A and 1B, 1 is an insulating substrate having heat resistance and good thermal conductivity, for example, a ceramic plate. 2,
... is approximately at the center of the width of one surface of the insulating substrate 1,
A pair of layered electrodes vertically spaced apart from each other, 3, ...
Is a lead wire connected to each electrode 2, .... Reference numeral 4 is a band-shaped low-melting metal body bridged between electrodes, and 5 is a flux layer provided on the low-melting metal body. Reference numerals 6 and 6 denote two two-terminal film resistors provided on the other surface of the insulating substrate, which are formed by printing and baking a resistance paste (a mixture of metal oxide powder and glass frit). The two-terminal film resistors 6 and 6 are provided symmetrically with respect to a vertical line YY passing through the low melting point metal body. 20, ... are electrodes that are terminals of the two-terminal film resistor, and 30, ... are lead wires connected to each of these electrodes. The electrodes 20, ... And the electrodes 2, ...
It can be formed by printing and baking a conductive paste (a mixture of silver or copper powder and glass frit).
7 and 7 are insulating layers coated on both sides of the insulating substrate, for example, a mold layer of a thermosetting epoxy resin.

上記の基板型抵抗・温度ヒューズ合成体においては第2
図に示すように、並列接続した機器または回路の多数箇
の2箇Zn,Zn+1に対して共用し、当該合成体の各膜抵抗
6・6を各機器の抵抗素子として使用する。また、低融
点金属体4は、各機器の継電回路Rn,Rn+1に挿入してあ
り、機器電流が基準電流I0(例えば、通常電流の10%増
電流であり、機器は安全である)以上となり、かつ低融
点金属体4が溶断すると、継電回路が作動して機器の通
電を遮断する。而して、機器Zn,(Zn+1)に過大電流が
流れるとその機器Zn,(Zn+1)の膜抵抗6,(6)が発熱
し、この発熱を低融点金属体4が受熱して溶融し、この
溶融金属4が溶融フラックスの共存下、表面張力のため
に溶断する。
The second in the above-mentioned substrate type resistor / thermal fuse composite
As shown in FIG, 2箇Z n of a number箇equipment or circuits connected in parallel, and shared by Z n + 1, using each membrane resistance 6.6 of the composite as a resistance element for each device . Further, the low melting point metal body 4 is inserted in the relay circuit R n , R n + 1 of each device, and the device current is a reference current I 0 (for example, a 10% increase in the normal current. When the low melting point metal body 4 melts, the relay circuit operates to cut off the energization of the equipment. And Thus, device Z n, (Z n + 1 ) to the excessive current flowing when the device Z n, membrane resistance 6 (Z n + 1), ( 6) is heated, the heating the low melting metal member 4 receives heat and melts, and the molten metal 4 melts in the presence of molten flux due to surface tension.

この場合、機器中何れの機器に過大電流が流れても、そ
の機器の通電電流が前記した基準電流I0以上であり、か
つ低融点金属体の溶断があるから、その機器の通電を遮
断できる。
In this case, even if an excessive current flows through any of the devices, the current flowing through the device is equal to or greater than the reference current I 0 described above, and the low melting point metal body is melted, so that the current supply to the device can be interrupted. .

また、両機器の通電電流が基準電流I0以上となっても、
上記過大電流以下であれば、低融点金属体の溶断がな
く、従って、機器の誤遮断作動を回避できる。
In addition, even if the current supplied to both devices exceeds the reference current I 0 ,
If the current is less than the above-mentioned excessive current, the low-melting-point metal body will not be blown out, and therefore the erroneous disconnection operation of the device can be avoided.

上記について、低融点金属体と膜抵抗とを絶縁基板の異
なる面に設けているので、これらを絶縁基板の同一面側
に設けている従来の基板型抵抗・温度ヒューズ合成体と
は異なり、膜抵抗と低融点金属体との膜導体による熱的
結合が不可となるが、絶縁基板に厚み0.3mm〜1.5mmとい
った薄いセラミックス板を使用することにより、膜抵抗
の発生熱の低融点金属体への熱伝達性を充分に保証でき
る。
Regarding the above, since the low-melting-point metal body and the film resistor are provided on different surfaces of the insulating substrate, unlike the conventional substrate-type resistance / temperature fuse composite body in which these are provided on the same surface side of the insulating substrate, the film Although it is impossible to thermally couple the resistance and the low melting point metal body with a film conductor, by using a thin ceramic plate with a thickness of 0.3 mm to 1.5 mm for the insulating substrate, it becomes a low melting point metal body of the heat generated by the film resistance. The heat transfer property of can be sufficiently guaranteed.

上記低融点金属体4を通る縦方向線を中心線として左右
対象の二箇の2端子膜抵抗6,6は、第3図A並びに第3
図Bに示すように、2端子膜抵抗の端子を構成する電極
を低融点金属体と直角方向に向けて設けることもでき
る。
The two two-terminal film resistors 6, 6 which are symmetrical with respect to the vertical line passing through the low melting point metal body 4 as the center line are shown in FIGS.
As shown in FIG. B, the electrodes forming the terminals of the two-terminal film resistor may be provided in the direction perpendicular to the low melting point metal body.

電熱工学上から明らかなように、近接配置の抵抗体と低
融点金属体との間において、抵抗体に熱量Qが発生した
とき、抵抗体発熱後、t時間経過時での低融点金属体の
温度上昇ΔTは ΔT=Qz(1−e−αt) で与えられる。ここで、αは抵抗体から低融点金属体へ
熱伝達に対する時定数であり、抵抗体と低融点金属体と
の間の熱抵抗をr、熱容量をcとすれば、α=1/rcで与
えられる。また、zは定常状態に達した時(t→∞)の
低融点金属体の温度上昇をΔT0とすれば、ΔT0/Qで与え
られ、抵抗体と低融点金属体との間の熱伝達媒質によっ
て定まる定数(熱伝達インピーダンス)である。
As is apparent from electrothermal engineering, when a heat quantity Q is generated in the resistor between the resistor and the low-melting-point metal body which are arranged in close proximity to each other, the low-melting-point metal body of the low-melting-point metal body at the time t after the resistor heats up. The temperature increase ΔT is given by ΔT = Qz (1-e- αt ). Here, α is a time constant for heat transfer from the resistor to the low-melting-point metal body. If the thermal resistance between the resistor and the low-melting-point metal body is r and the heat capacity is c, α = 1 / rc Given. Further, if z is an increase in the temperature of the low melting metal member when reaching a steady state (t → ∞) and [Delta] T 0, is given by [Delta] T 0 / Q, the heat between the resistor and the low melting metal member It is a constant (heat transfer impedance) determined by the transfer medium.

而るに、本発明に係る基板型抵抗・温度ヒューズ合成体
においては、膜抵抗が低融点金属体を通る縦方向線を中
心として左右対称に設けられているから、各膜抵抗と低
融点金属体との間の熱伝達時定数α並びに熱伝達インピ
ーダンスzが等しく、抵抗体の発生熱量Qが同じであれ
ば、何れの膜抵抗によっても低融点金属体を同等に温度
上昇させ得、等しい作動時間で低融点金属体を溶断作動
させることができ、何れの膜抵抗からも不均衡なく良好
に低融点金属体を溶断作動させることができる。
Therefore, in the substrate resistance / thermal fuse composite according to the present invention, since the film resistance is provided symmetrically with respect to the vertical line passing through the low melting point metal body, each film resistance and the low melting point metal are If the heat transfer time constant α and the heat transfer impedance z with the body are the same and the heat generation amount Q of the resistor is the same, the temperature of the low melting point metal body can be raised equally by any film resistance, and the same operation can be performed. The low-melting metal body can be fused and operated in a time period, and the low-melting metal body can be favorably fused and operated without imbalance from any film resistance.

(発明の効果) 上述した通り本発明に係る基板型抵抗・温度ヒューズ合
成体においては、一箇の低融点金属体に対し二箇の二端
子膜抵抗を設けているから、各二端子膜抵抗を一の機器
の異なる2ヵ所の回路部位に挿入接続し、これらの何れ
かの膜抵抗の発熱で低融点金属体を溶断作動させて当該
機器への通電を遮断することができる。
(Effects of the Invention) As described above, in the substrate-type resistance / thermal fuse composite according to the present invention, two two-terminal film resistors are provided for one low-melting-point metal body. It is possible to insert and connect to two different circuit parts of one device, and to heat the low melting metal body by the heat generation of any one of these film resistances to cut off the power supply to the device.

また、膜抵抗が低融点金属体を通る縦方向線を中心とし
て左右対称に設けられているから、各膜抵抗から低融点
金属体に至る熱伝達特性を等しくでき、何れの膜抵抗か
らも不均衡なく良好に低融点金属体を溶断作動させるこ
とができる。更に、二箇の膜抵抗を充分に近づけても、
低融点金属体の電極の面積を充分に大きくでき、低融点
金属体のリード線を機器の所定の回路部位にはんだ付け
する場合、リード線を伝ってくるはんだ熱をその電極で
よく吸収させて低融点金属体が溶融損傷するのを良好に
防止できる。また、膜抵抗と低融点金属体とを熱良伝導
性の薄いセラミックス絶縁板(厚さ0.3〜1.5mm)を介し
て熱的に結合してあるから、熱伝達性に秀れ、高感度を
保証できる。
Further, since the film resistances are provided symmetrically with respect to the vertical line passing through the low melting point metal body, the heat transfer characteristics from each film resistance to the low melting point metal body can be made equal, and the film resistance is not affected by any of the film resistances. It is possible to operate the low-melting-point metal body in a favorable manner without any balance. Furthermore, even if the two membrane resistances are brought close enough,
The area of the electrode of the low melting point metal body can be made large enough, and when soldering the lead wire of the low melting point metal body to the predetermined circuit part of the equipment, the solder heat transmitted through the lead wire should be absorbed well by the electrode. It is possible to favorably prevent the low melting point metal body from being melted and damaged. Moreover, since the film resistance and the low melting point metal body are thermally coupled through a thin ceramic insulating plate (thickness 0.3 to 1.5 mm) having good thermal conductivity, excellent heat transfer and high sensitivity are achieved. Can be guaranteed.

【図面の簡単な説明】[Brief description of drawings]

第1図Aは、本発明に係る基板型抵抗・温度ヒューズ合
成体を示す上面説明図、第1図Bは同合成体を示す裏面
説明図、第2図は本発明に係る合成体の使用状態を示す
説明図、第3図Aは本発明の別実施例を示す上面説明
図、第3図Bは同別実施例を示す裏面説明図である。 図において、1は絶縁基板、4は低融点金属体、6・6
は膜抵抗、7・7は絶縁層である。
1A is a top view showing a substrate-type resistor / thermal fuse composite according to the present invention, FIG. 1B is a back view showing the same, and FIG. 2 is the use of the composite according to the present invention. FIG. 3A is a top explanatory view showing another embodiment of the present invention, and FIG. 3B is a back side explanatory view showing the other embodiment. In the figure, 1 is an insulating substrate, 4 is a low melting point metal body, and 6/6.
Is a film resistance and 7 · 7 is an insulating layer.

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板における片面の横幅のほぼ中央位
置に、縦方向に間隔を隔てて一対の電極を設けられ、こ
れらの電極間に低融点金属体が接続され、この低融点金
属体上にフラックス層が設けられ、前記の各電極にリー
ド線が接続され、上記絶縁基板の他面に上記低融点金属
体を通る縦方向線を中心として左右対称の二箇の2端子
膜抵抗が設けられ、上記絶縁基板の両面に絶縁層が設け
られていることを特徴とする基板型抵抗・温度ヒューズ
合成体。
1. A pair of electrodes, which are vertically spaced apart from each other, are provided substantially at the center of the width of one surface of an insulating substrate, and a low-melting metal body is connected between these electrodes. A flux layer is provided, lead wires are connected to each of the electrodes, and two two-terminal film resistors that are symmetrical about the vertical line passing through the low melting point metal body are provided on the other surface of the insulating substrate. A substrate-type resistor / thermal fuse composite, wherein insulating layers are provided on both surfaces of the insulating substrate.
JP62017616A 1987-01-27 1987-01-27 Substrate type resistance / temperature fuse composite Expired - Fee Related JPH0787129B2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62017616A JPH0787129B2 (en) 1987-01-27 1987-01-27 Substrate type resistance / temperature fuse composite
KR870005332A KR880009407A (en) 1987-01-27 1987-05-28 Substrate Type Resistance, Temperature Fuse Composite
KR2019900019499U KR910000806Y1 (en) 1987-01-27 1990-12-11 Substrate Type, Temperature Fuse Composite

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62017616A JPH0787129B2 (en) 1987-01-27 1987-01-27 Substrate type resistance / temperature fuse composite

Publications (2)

Publication Number Publication Date
JPS63185002A JPS63185002A (en) 1988-07-30
JPH0787129B2 true JPH0787129B2 (en) 1995-09-20

Family

ID=11948810

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62017616A Expired - Fee Related JPH0787129B2 (en) 1987-01-27 1987-01-27 Substrate type resistance / temperature fuse composite

Country Status (2)

Country Link
JP (1) JPH0787129B2 (en)
KR (1) KR880009407A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2790433B2 (en) * 1993-08-31 1998-08-27 ソニー株式会社 Protection element and circuit board
JP3067011B2 (en) * 1994-11-30 2000-07-17 ソニーケミカル株式会社 Protection element and method of manufacturing the same
JP4708310B2 (en) 2006-06-19 2011-06-22 三菱電機株式会社 Circuit breaker
KR101434135B1 (en) 2014-03-17 2014-08-26 스마트전자 주식회사 Fuse resistor
KR101529835B1 (en) * 2014-12-16 2015-06-29 스마트전자 주식회사 Fuse resistor and manufacturing method thereof
KR101529836B1 (en) * 2014-12-16 2015-06-29 스마트전자 주식회사 Fuse resistor and manufacturing method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0616456Y2 (en) * 1983-08-29 1994-04-27 松下電器産業株式会社 Overtemperature prevention device
JPS6112206U (en) * 1984-06-25 1986-01-24 内橋エステック株式会社 Resistor with temperature switch
JPS6124205A (en) * 1984-07-13 1986-02-01 株式会社タイセー Speed control resistor of blower for automobile
JPH051045Y2 (en) * 1985-04-22 1993-01-12

Also Published As

Publication number Publication date
JPS63185002A (en) 1988-07-30
KR880009407A (en) 1988-09-15

Similar Documents

Publication Publication Date Title
US6269745B1 (en) Electrical fuse
US4533896A (en) Fuse for thick film device
CN107004538B (en) The manufacturing method of fixing body, the installation method of temperature fuse device and temperature fuse device
CN109074988B (en) Protective element
JP2001325869A (en) Protective element
JP2000285778A (en) Protective element
JPH02213733A (en) Electrothermal sensor
JP4464554B2 (en) Fuse element and chip type fuse
US5652562A (en) Thermally fused resistor having a portion of a solder loop thermally connected to an electrically insulated portion of an outer surface of the resistor
JP7433811B2 (en) Fuse elements, fuse elements and protection elements
JPH0787129B2 (en) Substrate type resistance / temperature fuse composite
US6515572B2 (en) Circuit arrangement comprising an SMD-component, in particular a temperature sensor, and a method of manufacturing a temperature sensor
JP6711704B2 (en) Protective device with bypass electrode
JP4112078B2 (en) Substrate type resistance / temperature fuse
JPH087731A (en) Resistance/temperature fuse for board
KR910000806Y1 (en) Substrate Type, Temperature Fuse Composite
JP3770408B2 (en) Substrate type resistance / temperature fuse and protection method for equipment
JP3594649B2 (en) Substrate type resistance / temperature fuse
JPS6322599Y2 (en)
JP4234818B2 (en) Resistance thermal fuse and manufacturing method thereof
JP2799996B2 (en) Temperature sensor
WO2000019472A1 (en) Chip fuse and method of manufacture thereof
JPH073558Y2 (en) Resistance temperature fuse composite
JPH0638351Y2 (en) Temperature fuse
CA1191178A (en) Fuse for thick film device

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees
点击 这是indexloc提供的php浏览器服务,不要输入任何密码和下载