JP2025041541A - Substrate coated with silicon carbide (SIC) layer and method for manufacturing same - Patents.com - Google Patents

Abstract

To provide a substrate such as a graphite or graphene substrate coated with a coating layer such as a silicon-carbide (SiC) coating layer, and a method of manufacturing the same.SOLUTION: In a structure 200, a homogenous coating layer 202 includes non-columnar grains 208a, 208b, 208c and non-columnar grain boundaries 210 with relatively the same size and shape as each other, which prevent contaminants (e.g., carbon) from being released from a base portion into a cavity of a processing tool when the cavity is heated to process one or more workpieces (e.g., silicon substrates, silicon wafers, etc.) present within the cavity. The homogenous coating layer is less susceptible (i.e., more robust) to defects propagating or occurring within the homogenous coating layer when the homogenous coating layer is exposed to successive increases or decreases in temperature as compared to a non-homogenous coating layer.SELECTED DRAWING: Figure 2B

Description

The present disclosure relates to a substrate, such as a graphite substrate or graphene substrate, coated with a coating layer, such as a silicon carbide (SiC) coating layer, and a method for manufacturing the same.

Description of the Related Art Generally, a furnace or heating system or tool includes a heating chamber lined with a graphite substrate. When the heating chamber is heated to manufacture or process a silicon-based substrate (e.g., a polycrystalline silicon carbide (SiC) substrate or workpiece), the graphite substrate heats and releases carbon into the heating chamber, contaminating the heating chamber with the released carbon. This carbon released into the heating chamber when forming or processing the silicon-based substrate contaminates the silicon-based substrate, which can cause the silicon-based substrate to be manufactured outside of selected tolerances. When a silicon-based substrate is manufactured outside of selected tolerances, the silicon-based substrate cannot be sold to a customer or consumer, but instead becomes waste material that is disposed of or discarded.

To prevent carbon from being released from the graphite into the heating chamber, the surface of the graphite substrate may be coated with a silicon carbide (SiC) or tantalum carbide (TaC) layer. However, when the SiC or TaC layer is exposed to the heat generated when the heating chamber is heated, the SiC or TaC layer begins to expand and contract, peeling or delaminating from the surface of the graphite substrate, or defects such as cracks appear in the SiC or TaC layer. This peeling, delamination, cracks, or defects exposes the surface of the graphite from the SiC or TaC layer, causing the graphite to release carbon into the heating chamber. Again, this carbon released into the heating chamber contaminates the heating chamber and the silicon-based substrate being formed or processed in the heating chamber.

The present disclosure relates to providing a silicon carbide (SiC) coating layer formed on a surface of a substrate, which may be made from a graphite or graphene material, that prevents or reduces the possibility of peeling, delamination, cracking, or other types of defects in the silicon carbide coating layer on the substrate.

In at least one embodiment of the present disclosure, a device includes a substrate, which may be graphite, graphene, or some other graphite- or graphene-based substrate, lining a cavity of a heating chamber of a workpiece processing or manufacturing tool. The substrate includes a first surface and a silicon carbide (SiC) coating layer coating and covering the first surface of the substrate. The SiC coating layer includes a plurality of grains having a grain size within a grain size range of 1 μm to 5 μm, or a grain size equal to the upper and lower ends of this grain size range. The SiC coating layer is made using a carbon-to-silicon ratio within a range of 0.5 to 2.5, or a carbon-to-silicon ratio equal to the upper and lower ends of this silicon-carbon ratio range. The SiC coating layer has a homogenous distribution of the grains, since the grains have substantially the same size and shape along the entirety of the SiC coating layer, and the grains of the SiC coating layer are non-columnar.

The present disclosure further relates to at least one embodiment of a method for manufacturing at least one embodiment of a device in which a SiC coating layer is formed on a first surface of a substrate, which may again be a graphite, graphene, or some other graphite-based or graphene-based substrate. For example, this at least one embodiment of a method for manufacturing at least one embodiment of a device in which a SiC coating layer is on a first surface of a substrate includes forming a SiC coating layer having a homogeneous grain size distribution on a surface of a graphite substrate. Forming a SiC coating layer on a surface of the graphite substrate includes exposing the surface of the graphite substrate to a first ratio of silicon and carbide for a first selected period of time and exposing the surface of the graphite substrate to a second ratio of silicon and carbide for a second selected period of time.

For a better understanding of the embodiments, reference will now be made, by way of example, to the accompanying drawings, in which like reference numbers identify the same or similar elements or acts, unless the context dictates otherwise. The sizes and relative proportions of elements in the drawings are not necessarily drawn to scale. For example, some of these elements may be enlarged and positioned to improve the readability of the drawings.

FIG. 1 is a side view of a structure including a base portion coated with a non-homogeneous coating layer. FIG. 1B is an exaggerated view of cross section AA of the structure shown in FIG. 1A, with the base portion coated with a non-homogeneous coating layer. FIG. 2 is a side view of one embodiment of a structure of the present disclosure including a base portion coated with a homogeneous coating layer. FIG. 2B is an enlarged, exaggerated view of section BB of the structure shown in FIG. 2A, with the base portion coated with a homogeneous coating layer. FIG. 1 is a first perspective view of one embodiment of a heating chamber of the present disclosure. FIG. 3B is a second perspective view of one embodiment of the heating chamber shown in FIG. 3A of the present disclosure. FIG. 13 is a perspective view of an alternative embodiment of the heating chamber of the present disclosure. 4 is a flow chart of one embodiment of a method of forming the structure shown in FIGS. 2A and 2B of the present disclosure. 3A-3C are side views of steps of an embodiment of a method for forming the structure shown in FIGS. 2A and 2B of the present disclosure. 3A-3C are side views of steps of an embodiment of a method for forming the structure shown in FIGS. 2A and 2B of the present disclosure. 3A-3C are side views of steps of an embodiment of a method for forming the structure shown in FIGS. 2A and 2B of the present disclosure.

In the following description, specific details are set forth to provide a thorough understanding of various embodiments of devices, methods, and articles. However, one of ordinary skill in the art will understand that other embodiments may be practiced without these details. In other instances, well-known structures and methods relating to, for example, silicon carbide substrates or layers (e.g., polycrystalline silicon carbide, single crystal silicon carbide, etc.), semiconductor manufacturing processes, etc., have not been shown or described in detail in some of the figures to avoid unnecessarily obscuring the description of the embodiments.

Unless the context otherwise requires, throughout the following specification and claims, the word "compris" and variations thereof, such as "comprising" and "comprises," are to be interpreted in an open and inclusive sense, i.e., "including, but not limited to."

References throughout this specification to "one embodiment" or "an embodiment" mean that a particular feature, structure, or characteristic described in connection with an embodiment is included in at least one embodiment. Thus, the appearances of the phrase "in one embodiment" or "in one embodiment" in various places throughout this specification do not necessarily refer to the same embodiment or all embodiments. Furthermore, particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments to yield further embodiments.

Headings are provided for convenience only and do not interpret the scope or meaning of the disclosure or claims.

The sizes and relative positions of elements in the drawings are not necessarily drawn to scale. For example, the shapes and angles of various elements may not be drawn to scale, and some of these elements may be enlarged and positioned to improve the legibility of the drawings.

The use of "lateral" means that a surface, sidewall, or similar or similar structure or feature is at an angle relative to another respective surface, sidewall, or similar or similar respective structure or feature. For example, if a first surface is lateral to a first sidewall, the first surface may be at an angle equal to 25 degrees, 35 degrees, 45 degrees, 75 degrees, 90 degrees, 120 degrees, etc.

Typically, graphite or graphene substrates, parts, or components are utilized to line the heating chambers of workpiece fabrication or processing tools configured to form, process, or refine workpieces (e.g., wafers) in operation within a semiconductor fabrication plant (FAB) for manufacturing semiconductor or electronic devices (e.g., semiconductor packages, semiconductor dies, or other similar or similar types of semiconductor or electronic devices). These graphite substrates are relatively resistant to damage from thermal expansion and contraction when exposed to increasing and decreasing temperatures as the cavity within the heating chamber is heated or cooled by a heating element to form the workpiece within the cavity of the heating chamber or to process or refine the workpiece within the cavity of the heating chamber. However, when the graphite substrate lining and defining the cavity of the heating chamber is exposed to increasing temperatures, the graphite substrate releases carbon particles or atoms within the cavity of the heating chamber, which become contaminants or undesirable dopants that are introduced into the workpiece within the heating chamber when the workpiece is fabricated, processed, or refined using the heating chamber. These carbon contaminants, which are undesirable dopants, result in semiconductor devices or components being manufactured outside selected tolerances, which are then discarded or scrapped. These discarded or scrapped semiconductor devices or components increase scrapping costs, which in turn increase the operating costs of the FAB.

To prevent or reduce the possibility of these carbon contaminants or undesirable dopants being released from the graphite when exposed to the elevated temperature in the cavity of the heating chamber, the surface of the graphite substrate exposed to the cavity of the heating chamber is coated with a heterogeneous columnar silicon carbide (SiC) coating layer or a tantalum carbide (TaC) coating layer. Although the heterogeneous columnar SiC or TaC coating layer prevents or reduces the possibility of carbon contaminants being released from the graphite substrate into the cavity of the heating chamber, the columnar structure of the grains of the heterogeneous columnar SiC or TaC coating layer, respectively, may cause the heterogeneous columnar SiC or TaC coating layer to rapidly delaminate or peel from the surface of the graphite substrate or to rapidly crack. This delamination, peeling, or cracking quickly exposes the respective areas of the surface of the graphite substrate from the non-uniform columnar SiC or TaC coating layer, again causing carbon contaminants to be released from the surface of the graphite substrate into the cavity of the heating chamber. The non-uniform columnar SiC or TaC coating layer also has grains of different sizes and shapes. Again, these carbon contaminants, which are undesirable dopants, result in semiconductor devices or components manufactured outside of selected tolerances, which are then discarded or scrapped. These discarded or scrapped semiconductor devices or components increase scrapping costs and, therefore, increase the operating costs of the FAB.

The present disclosure relates to one or more embodiments of a graphite substrate including a surface coated with a homogeneous non-columnar SiC or TaC coating layer having a plurality of grains with a homogeneous or uniform grain size distribution (e.g., all grains are relatively the same size and shape), each of the grains having a non-columnar shape. The homogeneous non-columnar SiC or TaC coating layer prevents or reduces the problems described above with respect to the heterogeneous columnar SiC or TaC coating layer. The grains of the plurality of grains of the homogeneous columnar SiC or TaC coating layer are all within a grain size range and are all substantially the same shape. Moreover, ideally, the grains of the plurality of grains are all exactly the same size and exactly the same shape. The grains are non-columnar in shape. The homogeneous or uniform distribution of the grain sizes of the multiple grains, together with their non-columnar shape, further prevents or reduces the possibility of delamination or peeling of the homogeneous non-columnar SiC or TaC coating layer from the surface of the graphite substrate, and further prevents or reduces the possibility of cracking of the homogeneous non-columnar SiC or TaC coating layer. For example, the homogeneous and uniform distribution of the grain sizes of the multiple grains increases the robustness and resistance of the homogeneous non-columnar SiC coating layer at higher temperatures (e.g., up to at least 1700 degrees Celsius) compared to the heterogeneous columnar SiC or TaC coating layer described above. The homogeneous or uniform distribution of the grain sizes of the multiple grains, together with the non-columnar shape of each grain, allows each grain of the homogeneous non-columnar SiC coating layer to expand and contract more easily without generating excessive stresses and strains that result in delamination, peeling, or cracking or increase the possibility of delamination, peeling, or cracking. Thus, the present disclosure relates to one or more embodiments of a graphite substrate including a homogenous non-columnar SiC or TaC coating layer having a plurality of grains with a homogenous or uniform grain size distribution, each of the grains having a non-columnar shape.

The present disclosure further relates to one or more embodiments of a method for manufacturing one or more embodiments of a graphite substrate including a surface coated with a homogenous non-columnar SiC coating layer having a plurality of grains with a homogenous or uniform grain size distribution, each of the grains having a non-columnar shape. Details of one or more embodiments of a method for manufacturing one or more of these embodiments of a graphite substrate coated with a homogenous non-columnar SiC coating layer are described in more detail later in this specification.

1A is a side view of a structure 100 including a base portion 102 coated with a non-homogeneous coating layer 104. The base portion 102 has a first surface 106 and a second surface 108 opposite the first surface 106. The base portion 102 is made of a graphite material, a graphite-based material, a graphene material, a graphene-based material, or some other similar or similar type of graphite or graphene material. The base portion 102 may be a substrate or component utilized in lining or forming a cavity of a heating chamber or structure (see FIGS. 3A, 3B, and 4 of this disclosure) for heating one or more workpieces.

The heterogeneous coating layer 104 is a silicon carbide (SiC) coating layer. In some alternative forms, the heterogeneous coating layer 104 is a tantalum carbide (TaC) coating layer. The heterogeneous coating layer 104 is along, at, on, and completely covers the first surface 106 of the base portion 102.

One or more first sidewalls 110 of the base portion 102 are flush with one or more second sidewalls 112 of the heterogeneous coating layer 104. The base portion 102 further includes a first thickness T1 extending from the first surface 106 to the second surface 108, and the heterogeneous coating layer 104 has a second thickness T2 extending from the first surface 106 to a third surface 114 of the heterogeneous coating layer 104. The third surface 114 of the heterogeneous coating layer 104 faces away from the base portion 102. The first thickness T1 is greater than the second thickness T2. The first thickness T1 is in the range of 1 μm (micrometer) to 10 μm (micrometer), or equal to the upper and lower ends of this range. The second thickness T2 is in the range of 1 μm to 10 μm, or equal to the upper and lower ends of this range.

Figure 1B is an enlarged, exaggerated view of cross section A-A of structure 100 shown in Figure 1A. As shown in Figure 1B, the heterogeneous coating layer 104 has a columnar structure such that the grains 116a, 116b of the heterogeneous coating layer 104 are columnar grains. The grains 116a, 116b include a first columnar grain 116a and a second columnar grain 116b. The first columnar grain 116a is larger than the second columnar grain 116b. As shown in Figure 1B, the first columnar grain 116a has a trapezoidal outline or shape and the second columnar grain 116b has a triangular outline or shape. Because the first columnar grains 116a are larger than the second columnar grains 116b, the heterogeneous coating layer 104 is heterogeneous or non-uniform, such that the heterogeneous coating layer 104 is susceptible to the propagation of defects (e.g., peeling, delamination, cracks, etc.) when the heterogeneous coating layer 104 is exposed to successive cycles of increasing and decreasing temperature during processing or manufacturing of the workpiece.

As shown in FIG. 1B, a plurality of columnar grain boundaries 118 exist between the first columnar grain and the second columnar grain. Each of the plurality of columnar grain boundaries 118 is between a pair of the first and second columnar grains 116a, 116b. As shown in at least FIG. 1B, the plurality of columnar grain boundaries 118 extend from the first surface 106 of the base portion 102 to the third surface 114 of the heterogeneous coating layer 104. In some alternative circumstances, the second columnar grain 116b may be slightly smaller in profile than shown in FIG. 1B, such that a grain boundary may exist between adjacent first columnar grains 116a.

2A is a side view of one embodiment of a structure 200 of the present disclosure including a base portion 102 coated with a homogenous coating layer 202. The structure 200 includes at least some of the same or similar features as the structure 100 shown in FIG. 1A. These same or similar features are labeled with the same or similar reference numbers. For the sake of brevity and simplicity of the present disclosure, the details of these same or similar features may not be repeated in full herein.

The homogeneous coating layer 202 is a silicon carbide (SiC) coating layer. In some alternative embodiments, the homogeneous coating layer 202 is a tantalum carbide (TaC) coating layer. The homogeneous coating layer 202 is along, at, on, and completely covers the first surface 106 of the base portion 102. The homogeneous coating layer 202 is directly bonded to the first surface 106 of the base portion 102 such that the homogeneous coating layer 202 abuts in direct physical contact with the first surface 106 of the base portion 102. In other words, in the embodiment shown in FIG. 2A, there is no material between the homogeneous coating layer 202 and the base portion 102 such that the homogeneous coating layer 202 is directly bonded to the first surface 106 of the base portion 102.

The one or more second sidewalls 204 of the homogeneous coating layer 202 are coplanar with the one or more first sidewalls 110 of the base portion 102. The homogeneous coating layer 202 includes a third thickness T3 that extends from the first surface 106 of the base portion 102 to a third surface 206 of the homogeneous coating layer 202. The third surface 206 of the homogeneous coating layer 202 faces away from the base portion 102. The third thickness T3 is in the range of 1 μm to 10 μm, or equal to the upper and lower ends of this range.

In at least one embodiment, the homogeneous coating layer 202 is a polycrystalline layer and the base portion 102 is a polycrystalline layer. In at least one embodiment, the homogeneous coating layer 202 is predominantly 3C (cubic) polycrystalline. For example, the homogeneous coating layer 202 is at least 90% 3C polycrystalline. In at least one embodiment, the base portion 102 is predominantly polycrystalline.

In at least one embodiment, the homogeneous coating layer is a non-amorphous layer. In at least one embodiment, the base portion 102 is a non-amorphous layer.

The homogeneous coating layer 202 has a thermal conductivity in the range of 150-300 W/(m*K) (Watts/(meter*Kelvin)) or equal to the upper and lower ends of this range. In at least one embodiment, the thermal conductivity is preferably in the range of 230-290 W/(m*K) or equal to the upper and lower ends of this range.

The transparency of the homogeneous coating layer 202 ranges from 90% to 99%, or equal to the upper and lower ends of this range. In at least one embodiment, the homogeneous coating layer 202 is transparent without any green color such that the absorption of light in the visible wavelength range is at least 20% or less, and preferably 10% or less. For example, typical absorption is in the range of 1% to 5%.

2B is an enlarged and enhanced view of cross section B-B of structure 200 shown in FIG. 2A. As shown in FIG. 2B, homogeneous coating layer 202 has a non-columnar structure such that grains 208a, 208b of homogeneous coating layer 202 are non-columnar grains. In other words, grain 208 has a first non-columnar grain 208a at first surface 106 of base portion 102, a second non-columnar grain 208b at third surface 206, and a third non-columnar grain 208c with a portion between first surface 106 and third surface 206 or at first surface 106 and third surface 206, respectively. Homogeneous coating layer 202 is homogeneous and uniform because most or most of grains 208a, 208b, 208c are all substantially equal in size relative to one another. Furthermore, all of the non-columnar grains 208a, 208b, 208c are substantially the same shape relative to one another. For example, the first non-columnar grain 208a and the second non-columnar grain 208b are smaller than the third non-columnar grain 208c, but the majority of the grains 208a, 208b, 208c are the third non-columnar grain 208c, so that the homogeneous coating layer 202 is homogeneous or uniform. The homogeneous coating layer 202 has a plurality of non-columnar grain boundaries 210 between adjacent first, second, and third non-columnar grains 208a, 208b, 208c. The plurality of non-columnar grain boundaries 210 of the homogeneous coating layer 202 are much smaller than the plurality of columnar grain boundaries 118 of the heterogeneous coating layer 104.

The grain size of the grains 208a, 208b is in the range of 1 micrometer (μm) to 5 micrometers (μm) or is equal to the upper and lower ends of this range. The grain size of the grains 208c is in the range of 1 micrometer (μm) to 5 micrometers (μm) or is equal to the upper and lower ends of this range. Even if the grain size is equal to the lower ends of these ranges, in at least one embodiment, the homogeneous layer 202 has a high thermal conductivity, for example equal to 250 W/(m*K). If each grain of the homogeneous coating layer 202 is small and has a high CTE compared to other similar amorphous, non-amorphous, or polycrystalline materials, the homogeneous coating layer 202 is extremely robust against defect propagation when exposed to changes in temperature (i.e., increases or decreases). This is possible because the homogeneous coating layer 202 is formed on the first surface 106 of the base portion 102 by a chemical vapor deposition (CVD) process. In the CVD process utilized to form the homogeneous coating layer 202 on the first surface 106 of the base portion 102, the CVD process involves providing a gas from a gas source, thus allowing the growth process to occur in the gas phase without particle nucleation, allowing grain boundaries between the grains 208a, 208b, 208c to not limit the thermal conductivity of the homogeneous coating layer 202.

The homogeneous coating layer 202 is less prone to defects propagating or occurring within the homogeneous coating layer 202 (i.e., more robust) than the heterogeneous coating layer 104 when the homogeneous coating layer is exposed to a continuous increase or decrease in temperature. For example, the homogeneous coating layer may be resistant to temperatures rising to at least 1700 degrees Celsius (°C) compared to the heterogeneous coating layer 104. The homogeneous coating layer 202 is more robust than the heterogeneous coating layer 104. The heterogeneous coating layer 104 only withstands a temperature range of 900 to 1400°C without cracking or spalling. In other words, the homogeneous coating layer 202 can be exposed to temperature increases and decreases up to 1700 degrees Celsius (°C) without defects (e.g., cracks, spalls, or any other similar or similar type of defects) propagating within the homogeneous coating layer 202. Thus, there is no or low probability of defects propagating in the homogeneous coating layer 202 when exposed to temperature increases up to and decreases from 1700 degrees Celsius (°C), whereas there is a high possibility or probability of defects propagating rapidly in the heterogeneous coating layer 104 when exposed to temperature increases up to and decreases from 1700 degrees Celsius (°C). As will become apparent in light of the description in this disclosure, the homogeneous coating layer 202 is more robust to larger increases and decreases in temperature compared to the heterogeneous coating layer 104.

3A and 3B are perspective views of a heating chamber 400 utilized in a processing tool. For example, the processing tool may be a furnace for processing one or more workpieces in the heating chamber 400 or for forming layers on one or more workpieces (i.e., silicon substrates or wafers, silicon carbide substrates or wafers, or any other similar or similar type of substrate or wafer) in the heating chamber 400. The heating chamber 400 includes a first plate or portion 402, a second plate or portion 404 spaced apart from the first portion 402, and a sidewall plate or portion 406 extending from the first portion 402 to the second portion 404. The sidewall portion 406 is transverse to the first portion 402 and the second portion 404. In the embodiment of the heating chamber 400 illustrated in FIGS. 3A and 3B, there are two sidewall portions 406 that are opposed to each other. The first portion 402, the second portion 404, and the sidewall portion 406 are made from a graphite material, a graphite-based material, a graphene material, a graphene-based material, or some other similar or similar type of graphite or graphene material.

A first opening 408 is at a first end 410 of the heating chamber 400 and provides access to a cavity 412 within the heating chamber 400. The cavity 412 is defined by the first portion 402, the second portion 404, and the sidewall portion 406. A second opening 414 is at a second end 416 of the heating chamber 400 opposite the first end 410 and provides access to the cavity 412 within the heating chamber 400. Either the first or second opening 408 allows one or more workpieces to be placed within the cavity 412 of the heating chamber 400. For example, a transfer robot arm (TRA) having an end effector or transfer blade is utilized to insert one or more workpieces into the cavity 412 through either the first or second opening 408, 414 of the heating chamber 400.

The first portion 402 includes a first outer surface 418, the second portion 404 includes a second outer surface 420, and the sidewall portion 406 includes a sidewall outer surface 422. The first outer surface 418, the second outer surface 420, and the sidewall outer surface 422 do not line or define the cavity 412 of the heating chamber 400, and the first outer surface 418, the second outer surface 420, and the sidewall outer surface 422 do not line or define the first and second openings 408, 414 of the heating chamber 400.

The first portion 402 includes a first inner surface 424, the second portion 404 includes a second inner surface 426, and the sidewall portion 406 includes a sidewall inner surface 428. The first inner surface 424, the second inner surface 426, and the sidewall inner surface 428 line or define the cavity 412 of the heating chamber 400, and the first inner surface 424, the second inner surface 426, and the sidewall inner surface 428 line or define the first and second openings 408, 414 of the heating chamber 400.

The first portion 402 includes a first end surface 430, the second portion 404 includes a second end surface 432, and the sidewall portion 406 includes a first sidewall end surface 434. The first end surface 430, the second end surface 432, and the first sidewall end surface 434 are at a first end 410 of the heating chamber 400.

The first portion 402 includes a third end surface 436 opposite the first end surface 430, the second portion 404 includes a fourth end surface 438 opposite the second end surface 432, and the sidewall portion 406 includes a second sidewall end surface 440 opposite the first sidewall end surface 434. The third end surface 436, the fourth end surface 438, and the second sidewall end surface 440 are at the second end 416 of the heating chamber 400.

The first inner surface 424, the second inner surface 426, the sidewall inner surface 428, the first end surface 430, the second end surface 432, the first sidewall end surface 434, the third end surface 436, the fourth end surface 438, and the second sidewall end surface 440 are all coated with a homogenous coating layer 202 (see Figures 2A and 2B of this disclosure), which is homogenous and has a non-columnar structure such that the majority of the grains 208a, 208b, 208c of the homogenous coating layer 202 are all substantially the same size and shape relative to one another and are non-columnar grains. Each portion of the homogenous coating layer 202 on the first end surface 430 is continuous with each portion of the homogenous coating layer 202 on the first inner surface 424 such that the first edge 425 is completely coated by the homogenous coating layer 202. The respective portions of the homogenous coating layer 202 on the second end face 432 are continuous with the respective portions of the homogenous coating layer 202 on the second inner surface 426 such that the second edge 427 is completely coated with the homogenous coating layer 202. The respective portions of the homogenous coating layer 202 on the first sidewall end face 434 are continuous with the respective portions of the homogenous coating layer 202 on the sidewall inner surface 428 such that the third edge 429 is completely coated with the homogenous coating layer 202. The respective portions of the homogenous coating layer 202 on the third end face 436 are continuous with the respective portions of the homogenous coating layer 202 on the second inner surface 426 such that the fourth edge 431 is completely coated with the homogenous coating layer 202. The respective portions of the homogeneous coating layer 202 on the fourth end surface 438 are continuous with the respective portions of the homogeneous coating layer 202 on the first inner surface 424 such that the fifth edge 433 is completely coated with the homogeneous coating layer 202. The respective portions of the homogeneous coating layer 202 on the second sidewall end surface 440 are continuous with the respective portions of the homogeneous coating layer 202 on the sidewall inner surface 428 such that the sixth edge 435 is completely coated with the homogeneous coating layer 202. Coating these respective edges 425, 427, 429, 431, 433, 435 reduces the likelihood of spalling occurring at or near these respective edges 425, 427, 429, 431, 433, 435, which further prevents or reduces the likelihood of introducing contaminants (e.g., carbon) into the cavity 412 of the heating chamber 400 when processing a workpiece present therein.

When the heat chamber 400 is utilized in a processing tool or furnace tool that includes or has the heat chamber 400, one or more workpieces are inserted into the cavity 412 of the heat chamber 400. Once the one or more workpieces are inserted into the cavity 412 of the heat chamber 400, gas from a gas source (i.e., _SiH4 , _Si2H6 , _GeH4 , or any other _similar or similar type of gas) is introduced and passes through the cavity 412 of the heat chamber 400 while the heat chamber 400 is heated by a heating element of the processing tool or furnace tool. In at least one embodiment, the gas enters the first opening 408 (i.e., gas inlet), passes through the cavity 412, and exits through the second opening 414 (i.e., gas outlet). In at least one alternative embodiment, the gas flows in the reverse direction, such that the gas enters the second opening 414 (i.e., gas inlet), passes through the cavity 412, and exits the first opening 408 (i.e., gas outlet). As the gas travels through the cavity 412, an epitaxial layer forms on each of the surfaces of one or more workpieces present in the cavity 412. The process described above is an epitaxial growth formation process that grows and forms an epitaxial layer on each of the surfaces of one or more workpieces present in the cavity 412. Once an epitaxial layer has grown and formed on each of the surfaces of the one or more workpieces, the introduction of gas into the cavity 412 is stopped, and the heating chamber 400 can be cooled, for example, by ceasing to heat the heating chamber 400 with the heating element. After cooling of the one or more workpieces, an end effector of the TRA is utilized to remove the one or more workpieces on which the epitaxial layer was grown and formed using the heating chamber 400.

During heating of the cavity 412 of the heating chamber 400, the homogeneous coating layer 202 on each sidewall inner surface 428 and each inner surface 424, 426 of each portion 402, 404, 406 defining the heating chamber 400 is directly exposed to heat, and each base portion of each of these respective portions is not directly exposed to heat due to the presence of the homogeneous coating layer 202. In other words, each surface 206 of the homogeneous coating layer 202 is directly exposed to heat that heats the cavity 412 of the heating chamber 400. In other words, the homogeneous coating layer 202 lines the entire cavity 412 of the heating chamber 400.

The above process described with respect to Figures 3A, 3B, and 4 for forming an epitaxial layer on one or more workpieces is performed multiple times in succession such that the heating chamber 400 is utilized multiple times to process multiple workpieces that are inserted sequentially into the cavity 412. If the first inner surface 424, the second inner surface 426, the sidewall inner surface 428, the first end surface 430, the second end surface 432, the first sidewall end surface 434, the third end surface 436, the fourth end surface 438, and the second sidewall end surface 440 are coated with the inhomogeneous coating layer 104 instead of the homogeneous coating layer 202, defects will begin to propagate more rapidly in the inhomogeneous coating layer 104 than if the homogeneous coating layer 202 were instead on the first inner surface 424, the second inner surface 426, the sidewall inner surface 428, the first end surface 430, the second end surface 432, the first sidewall end surface 434, the third end surface 436, the fourth end surface 438, and the second sidewall end surface 440.

When the inhomogeneous coating layer 104 is present on the first surface 106 of the base portion 102, defects begin to propagate more quickly and with a higher probability in the inhomogeneous coating layer 104 than if the homogeneous coating layer 202 were instead on the first surface 106 of the base portion 102. This is due, at least in part, to the columnar structure of the first and second columnar grains 116a, 116b, which have relatively large columnar grain boundaries 118 compared to the relatively small non-columnar grains 210. For example, the relatively large columnar grain boundaries 118 are less susceptible to the propagation of defects (e.g., cracks, spalling, etc.) compared to the propagating tendency of these defects in the small non-columnar grain boundaries 210 because the small non-columnar grain boundaries 210 more easily and readily reduce or withstand stresses and strains generated by increasing and decreasing temperatures (i.e., expansion and contraction) compared to the large columnar grain boundaries 118.

For example, when there is a change in temperature (i.e., increase and decrease) in the cavity 412 of the heating chamber 400 and the inhomogeneous coating layer 104 is on the first surface 106 of the base portion 102, the grains 116a, 116b expand (i.e., increase in temperature) and contract (i.e., decrease in temperature) due to the thermal cycle. This expansion and contraction of the columnar grains 116a, 116b causes stresses and strains to fluctuate and propagate between the columnar grains 116a, 116b at the columnar grain boundaries 118. As the stresses and strains fluctuate, the large columnar grain boundaries 118 may begin to separate from one another or to push against one another, which may cause cracks in the inhomogeneous coating layer 104. When a crack initiates or propagates along at least one of the large columnar grain boundaries 118, the crack will likely extend from the third surface 114 of the inhomogeneous coating layer 104 to the first surface 106 of the base portion 102, resulting in an area of the first surface 106 being exposed to the cavity 412 by fluid communication through the propagated crack. When an area of the first surface 106 of the base portion 102 is exposed to the cavity 412 of the heating chamber 400, the first surface 106 of the base portion will generate carbon that enters the cavity 412 as a contaminant or unintended dopant that becomes part of the epitaxial layer grown or formed on the respective surface of the workpiece (e.g., silicon substrate, silicon wafer, etc.) present in the cavity 412. This contaminant will cause the semiconductor device being manufactured to be out of tolerance, resulting in wasted costs absorbed by the FAB.

On the other hand, when there is a change in temperature (i.e., increase and decrease) in the cavity 412 of the heating chamber 400, for example, and the homogeneous coating layer 202 is on the first surface of the base portion 102, the grains 116a, 116b expand (i.e., increase in temperature) and contract (i.e., decrease in temperature). This expansion and contraction of the non-columnar grains 208a, 208b, 208c causes stresses and strains to fluctuate and propagate among the non-columnar grains 208a, 208b, 208c at the non-columnar grain boundaries 210. As the stresses and strains fluctuate, at least some of the small non-columnar grain boundaries 210 may begin to separate from one another, which may result in cracks. Because the plurality of non-columnar grain boundaries 210 are smaller than the plurality of columnar grain boundaries 118, the smaller non-columnar grain boundaries 210 more easily withstand or reduce the stress and strain caused by this expansion and contraction due to thermal cycling. The smaller non-columnar grain boundaries 210 also distribute the stress and strain more uniformly through the smaller non-columnar grain boundaries 210 compared to the larger columnar grain boundaries 118, so that the smaller non-columnar grain boundaries 210 are more resistant to crack defects. However, even if a crack does begin to initiate or propagate along at least one of the smaller non-columnar grain boundaries 210, the crack is unlikely to extend from the third surface 206 of the homogeneous coating layer 210 to the first surface 106 of the base portion 102, preventing or reducing the possibility that an area of the first surface 106 would be exposed to the cavity 412 by fluid communication through a crack in the homogeneous coating layer 202. In other words, even if a crack begins to propagate along at least one of the small non-columnar grain boundaries 210, the stress and strain are more uniformly distributed because there are more small non-columnar grain boundaries 210 in the homogeneous coating layer 202 compared to the large columnar grain boundaries 118 in the heterogeneous coating layer 104. In other words, the smaller non-columnar grains 210 of the plurality of non-columnar grains 208a, 208b, 208c are much more robust to stress and strain caused by a change (i.e., increase or decrease) in temperature compared to the larger columnar grain boundaries 118 of the plurality of columnar grains 116a, 116b, and therefore, when the homogeneous coating layer 202 is on the first surface 106 of the base portion 102 instead of the heterogeneous coating layer 104, the crack is much less likely to expose the first surface 106 of the base portion to the cavity 412 of the heating chamber 400.

Furthermore, there is a CTE (coefficient of thermal expansion) mismatch between the base portion 102 and the homogeneous coating layer 202 and the heterogeneous coating layer 104, respectively. In other words, when exposed to a thermal cycle, the base portion 102 expands by a different amount than the homogeneous coating layer 202 and the heterogeneous coating layer 104, respectively. As described above, the stresses and strains caused by this CTE mismatch are less likely to cause defects in the homogeneous coating layer 202 compared to the heterogeneous coating layer 104 because the smaller non-columnar grain boundaries 210 of the homogeneous coating layer 202 are more resilient and robust than the larger columnar grain boundaries 118 of the heterogeneous coating layer 104.

In view of the above discussion, the homogeneous coating layer 202 absorbs or mitigates stresses and strains caused by changes (i.e., increases or decreases) in temperature compared to the heterogeneous coating layer 104, such that the homogeneous coating layer 202 is less susceptible to peeling or delamination at or near one or more first sidewalls 110 of the base portion 102 or is more robust against peeling or delamination compared to the heterogeneous coating layer 104.

If a non-homogeneous coating layer 104 is present on the first surface 106 of the base portion 102, peeling or delamination caused by the larger columnar grain boundaries 118, which are more susceptible and less robust to temperature changes (i.e., increases or decreases), is more likely to occur at or near one or more first sidewalls 110 of the base portion 102. On the other hand, if a homogeneous coating layer 202 is present on the first surface 106 of the base portion 102, peeling or delamination caused by the smaller non-columnar grain boundaries 210, which are less susceptible and less robust to temperature changes (i.e., increases and decreases), is less likely to occur at or near one or more first sidewalls of the base portion 102 because the non-columnar grains 210 are all the same size and shape relative to one another.

The spalling of the first non-columnar grain 116a of the inhomogeneous coating layer 104 at the first surface 106 of the base portion 102 is relatively more likely than spalling of the first and third non-columnar grains 208a, 208c of the inhomogeneous coating layer 202 at the first surface 106 of the base portion 102. For example, the trapezoidal shape and larger size of the first columnar grain 116a, which is smaller at its end at the first surface 106 than at its end at the third surface 114 of the inhomogeneous coating layer 104, increases the likelihood of spalling of the inhomogeneous coating layer 104 from the first surface 106 when exposed to thermal cycling. On the other hand, the first and third non-columnar grains 208a, 208c being the same size and shape relative to one another and smaller allows a greater number of the first and third non-columnar grains 208a, 208b to be present on the first surface 106 compared to the first and second columnar grains 116a, 116b, providing a stronger bond of the homogeneous coating layer 202 to the first surface 106 compared to the heterogeneous coating layer 104 when bonded to the first surface 106. In other words, the smaller non-columnar grains 208a, 208c of the homogeneous coating layer 202 at the first surface 106 have a greater adhesion to the first surface 106 compared to the larger columnar grains 116a, 116b of the heterogeneous coating layer 104, thereby reducing the likelihood of delamination when utilizing the homogeneous coating layer 202 instead of the heterogeneous coating layer 104.

In view of the above discussion, the use of a homogeneous coating layer 202 (see FIGS. 2A and 2B of the present disclosure) including first, second, and third non-columnar grains 208a, 208b, 208c all of the same relative and substantially same size and a plurality of non-columnar grain boundaries 210 reduces or prevents the occurrence of defects (e.g., cracks, delamination, etc.) as compared to the use of a heterogeneous coating layer 104 having a columnar structure as described above (see FIGS. 1A and 1B of the present disclosure). The homogeneous coating layer 202 is more robust than the heterogeneous coating layer 104 because the homogeneous coating layer 202 is more robust when exposed to changes in temperature (i.e., increases or decreases in temperature) that cause the first, second, and third non-columnar grains 208a, 208b, 208c to expand or contract.

In view of the above discussion, the homogeneous coating layer 202 has a longer usable life than the heterogeneous coating layer 104. In other words, the base portion 102 coated with the homogeneous coating layer 104 can be utilized for processing more workpieces than if the base portion 102 was coated with the heterogeneous coating layer 202. In other words, the homogeneous coating layer 202 can undergo more thermal cycles before defects propagate in the homogeneous coating layer 202 compared to the heterogeneous coating layer 104.

4 is a perspective view of an alternative embodiment of a heating chamber 500 of the present disclosure. The heating chamber 500 has a container 502 and a lid 504. The container includes an opening 506 that provides access to a cavity 508 of the container 502 when the lid 504 is in the open position shown in FIG. 4. The container 502 includes coated surfaces 510 that define a cavity 508 in the container 502. These coated surfaces 510 are present anywhere that will be exposed to gas from a gas source when processing a plurality of workpieces 512 present in the cavity 508, and these coated surfaces 510 are coated with a homogenous coating layer 202. The plurality of workpieces 512 are present on a transfer or support plate 514, which may be referred to as a transfer or support disk, each surface that will be exposed to gas from the gas source is coated with a homogenous coating layer 202. The workpieces 512 are inserted by placing the workpieces on some of the support plates 514 and then placing the support plates 514 with the workpieces on them into receiving areas in the cavity 508 configured to receive the support plates 514. In other words, each receiving area is configured to receive one of the support plates 514, as shown in FIG. 4.

A gas inlet 516 is present in the center of the cavity 508 and is in fluid communication with a gas source for supplying gas into the cavity 508 when the lid 504 is in a closed position during processing of the multiple workpieces 512 present in the cavity 508. A gas outlet or outlet recess 518 is present in a peripheral region of the cavity 508 of the container 502. When the lid 504 is in a closed position sealing the cavity 502, gas from a gas source is introduced into the cavity 508 through the gas inlet 516. The gas may be _SiH4 gas, _Si2H6 gas, _GeH4 gas, or other similar _or similar types of gas. As the gas enters the cavity 508 through the gas inlet 516, the gas travels in a direction away from the gas inlet 516 toward the gas outlet 518, as represented by arrow 520. As the gas moves in the direction represented by the arrow 520, it moves along the coated surface 510 in the vessel 502, the coated surface of the support plate 514, and the exposed surfaces 522 of the plurality of workpieces 512 to form one or more epitaxial layers on the exposed surfaces 522 of the plurality of workpieces 512. Because each coated surface 510 and support plate 514 is coated with a homogenous coating layer 202, the propagation of defects is prevented or reduced in the same manner as previously described herein with respect to Figures 3A and 3B of the present disclosure, and therefore this description will not be repeated in full herein. Each of these surfaces being coated with a homogenous coating layer 202 prevents or reduces the possibility of contaminants (e.g., carbon) being released into the cavity 508 during the processing of the plurality of workpieces 512, in the same manner as previously described herein with respect to Figures 3A and 3B of the present disclosure, and therefore this description will not be repeated in full herein. In other words, the coated surface 510 and the coated support plate 514 are again coated with a homogeneous coating layer 202, which prevents contaminants from being introduced into the cavity 508 during processing of the multiple workpieces 512, as defects are less likely to propagate within the homogeneous coating layer 202.

The lid 504 further includes an inner surface 523 that defines a cavity 508 of the vessel 502 when the lid 504 is in the closed position. During processing of the plurality of workpieces 512 by forming one or more epitaxial layers on the exposed surfaces 522 of the plurality of workpieces 512, the inner surface 523 is exposed to gases introduced into the cavity 508 through the gas inlet 516 such that the inner surface 523 is coated with a homogeneous coating layer 202.

Figure 5 is a flowchart 600 of a method for manufacturing the structure 200 shown in Figures 2A and 2B of the present disclosure, in which the base portion 102 is coated with a homogenous coating layer 202. The flowchart 600 includes a first step 602, a second step 604, a third step 606, and a fourth step 608. Figures 6A-6C are side views of each of these steps 602, 604, 606, and 608 of the flowchart 600 shown in Figure 5 for an embodiment of a method for manufacturing the structure 200 having the homogenous coating layer 202 shown in Figures 2A and 2B of the present disclosure.

In a first step 602, the base portion 102 (see FIG. 6A), which has not yet been coated with the homogeneous coating layer 202, is inserted into a cavity of a furnace (not shown). The furnace is configured to heat the furnace cavity during operation as the homogeneous coating layer 202 is formed on the first surface 106 of the base portion 102.

After the first step 602, in a second step 604 (see FIG. 6B ), the heating elements of the furnace are turned on to heat the cavity in which the base portion 102 resides, and gas from a gas source is introduced into the furnace cavity. A first one of the gases is a silicon-based gas, and a second one of the gases is a carbon-based gas. The silicon-based gas and the carbon-based gas chemically react with each other, thereby initiating the formation of non-columnar grains 208 a, 208 b, 208 c on the first surface 106 of the base portion 102. The furnace cavity is heated to a temperature of up to 1700 degrees Celsius (° C.) as it forms a homogeneous coating layer 202 on the first surface 106 of the base portion 102. A silicon-based gas (e.g., SiH ₄ ) and a carbon-based gas (e.g., C ₂ H ₄ ) are introduced to produce a first ratio of silicon and carbon of one to one (i.e., 1:1 or one silicon per carbon) for a first period of time. This first period of time may range from 5 minutes (min) to 120 minutes (min) or equal to the upper and lower ends of this range. In some embodiments, this first period of time may be equal to 60 minutes (min) or 1 hour (hr). The result of this partial growth of non-columnar grains 208a, 208b, 208c of the homogeneous coating layer 202 on the base portion first surface 106 can be readily seen in FIG. 6B.

For example, to produce this one to one ratio of silicon and carbon, a first ratio (i.e., 1:1) is produced by introducing _SiH4 at a flow rate of 20 mL/min (i.e., _milliliters per minute) and _C2H4 at a flow rate of 10 mL/min (i.e., milliliters per minute) to produce this one to one ratio (i.e., one silicon to one carbon) of silicon and carbon.

In FIG. 6B, a partially formed homogeneous coating layer 610 is formed on the first surface 106 of the base portion 102. The partially formed homogeneous coating layer 610 has a fourth thickness T4 that extends from the first surface 106 to a fourth surface 614 of the partially formed homogeneous coating layer 610 that faces away from the base portion 102. The fourth thickness is less than the third thickness T3.

After the second step 604, in a third step 606 (see FIG. 6C), the heating element continues to heat the furnace cavity and a silicon-based gas (e.g., _SiH4 ) and a carbon- _based gas (e.g., _C2H4 ) are introduced to produce a second ratio of silicon and carbon that is different from the first ratio (i.e., 1:1). The heating element may heat the furnace cavity to a temperature equal to 1575 degrees Celsius (°C). The second ratio is one to two (i.e., 1:2) such that there is twice as much carbon to silicon. For example, to produce this one to two (e.g., 1:2) ratio of silicon and carbon, the second ratio is produced by introducing _SiH4 at a flow rate of 20 mL/ _min (i.e., milliliters per minute) and _C2H4 at a flow rate of 20 mL/min (i.e., milliliters per minute) to produce this one to two (i.e., one silicon to two carbon) ratio of silicon and carbon. This change in the silicon to carbon ratio parameters grows different facets of the non-columnar grains 208a, 208b, 208c as compared to the second step 604.

In this third step 606, a silicon-based gas (e.g., _SiH4 ) and a _carbon -based gas (e.g., _C2H4 ) are introduced to produce a second ratio of silicon and carbon of 1 to 2 (i.e., 1:2 or 1 silicon for every 2 carbons) for a second period of time. This second period of time may range from 5 minutes (min) to 120 minutes (min) or equal to the upper and lower ends of this range. In some embodiments, this second period of time may be equal to 60 minutes (min) or 1 hour (hr).

In other words, in the second step 604 and the third step 606, the ratio of silicon to carbon is essentially adjusted during the CVD process so that silicon carbide is deposited and formed directly on the first surface 106 of the base portion 102. For example, during this direct formation or deposition of silicon carbide on the first surface 106 of the base portion 102, it means that there is no material present on the first surface 106 of the base portion 102 so that the homogeneous coating layer 202 is formed directly on the first surface 106 of the base portion 102. Furthermore, since silicon carbide is formed and deposited directly on the first surface 106 of the base portion 102 and forms the homogeneous coating layer 202 by changing the ratio of silicon to carbon, no annealing step is required as silicon carbide during the formation of the homogeneous coating layer 202 on the first surface 106 of the base portion 102. By varying the ratio of silicon to carbon during the CVD process, a homogenous coating layer 202 having the physical properties previously described herein is formed on the first surface 106 of the base portion 102. Furthermore, in forming the homogenous coating layer 202 on the first surface 106 of the base portion, the homogenous coating layer 202 grows on the first surface 106 of the base portion, which in at least one embodiment is a polycrystalline or unstructured material such as graphite or polycrystalline SiC or Si. The quality of the first surface 106 of the base portion 102 is preferably rough, such that the roughness (Ra) of the first surface 106 of the base portion 102 is between 3 and 10 nanometers (nm). This relatively high roughness can be used, but a thicker layer may be required to cover the first surface 106 of the base portion 102. The first surface 106 generally may not be monocrystalline. This is because the use of a single crystal results in larger island growth, with some grains becoming very large (10 times larger than desired), which results in additional strain that increases the likelihood of cracking of the homogeneous coating layer 202 when it is formed on the first surface 106 of the base portion 102.

In some embodiments, one or more additional steps are performed after the second step 604 and the third step 606 and before the fourth step 608. For example, during at least one additional step after the third step 606, another step is introduced in which a one to one (i.e., 1:1) ratio of silicon and carbon is introduced into the furnace. In this at least one additional step, a _silicon -based gas (e.g., _SiH4 ) and a carbon-based gas (e.g., _C2H4 ) are introduced to again produce the first ratio of silicon and carbon. This change in the silicon to carbon ratio parameter from the second ratio back to the first ratio grows different facets of the non-columnar grains 208a, 208b, 208c compared to the third step 606. For example, these facets of the non-columnar grains 208a, 208b, 208c grown by returning to the first ratio may be the same or similar to the facets grown during the second step 604. Based on this discussion, in some embodiments, further additional steps of switching back and forth between the first and second ratios of silicon and carbon introduced into the furnace (e.g., a fourth step of introducing a second ratio of silicon and carbon, a fifth step of the first ratio of silicon and carbon, etc.) can be performed to further promote the growth of various facets of the non-columnar grains 208 a, 208 b, 208 c of the homogenous coating layer 202.

These additional steps of switching back and forth between the first and second ratios of silicon and carbon introduced into the furnace allow for the formation and growth of a homogeneous coating layer 202. In other words, these steps of introducing the first and second ratios of silicon and carbon into the furnace can be performed any number of times to form and grow non-columnar grains 208a, 208b, 208c having a desired variety of sizes and facets on the first surface 106 of the base portion 102. By performing one or more of these additional steps to further facilitate the growth of the various facets of the non-columnar grains 208a, 208b, 208c, a greater number of layers of non-columnar grains 208a, 208b, 208c of the homogeneous coating layer 202 can be formed on the first surface 106 of the base portion 102 compared to that shown in FIG. 2B. Each of these one or more additional steps may be performed for a different selected period of time. These different selected periods may range from 5 minutes (min) to 120 minutes (min), or may be equal to the upper and lower limits of this range. In some embodiments, these different selected periods may be equal to 60 minutes (min) or 1 hour (hr). By performing or implementing one or more of these additional steps to further facilitate the growth of the various facets of the non-columnar grains 208a, 208b, 208c, the third thickness T3 of the homogeneous coating layer 202 may be equal to 20 μm.

After the third step 606, in a fourth step 608, the heating element is turned off and the introduction of gas from the gas source into the furnace cavity is stopped. The base portion 102 and the homogeneous coating layer 202 (see FIG. 6C) formed completely on the first surface 106 are cooled to room temperature. After the base portion 102 and the homogeneous coating layer 202 have cooled to room temperature, the base portion 102 and the homogeneous coating layer formed on the first surface 106 are removed from the furnace cavity. The base portion 102 is then utilized to form any one of the embodiments of the heating chamber 400, 500 shown in FIGS. 3A, 3B, and 5, respectively, of the present disclosure.

Utilizing the method flow chart 600 for fabricating the structure 200, a homogeneous coating layer 202 of silicon carbide (SiC) is formed. The homogeneous coating layer 202 formed has a silicon to carbon ratio in the range of 0.5 to 2.5, or has a silicon to carbon ratio equal to the upper and lower ends of this range. In some embodiments, the silicon to carbon ratio may be equal to 2, such that there is a 1 to 2 ratio between silicon and carbon, with one silicon for every two carbons.

In some embodiments of the flowchart 600 of the method of manufacturing the structure 200, prior to growing silicon carbide (SiC) on the first surface 106 of the base portion 102, the first surface 106 of the base portion 102 is etched with _H mixed _{with C2H4} . This etching of the first surface 106 of the base portion 102 may be performed by mixing _H2 at a flow rate of 80 mL/min (milliliters per minute) with _C2H4 at a flow rate of _0.5 mL/min (milliliters per minute). In some embodiments, this etching process may be performed prior to inserting the base portion 102 into a furnace in the first step 602. Etching the first surface 106 of the base portion 102 in this manner may further facilitate the formation or growth of a uniform coating layer 202 on the first surface of the base portion 102.

2A and 2B, in at least one alternative embodiment of the structure 200 shown in FIG. 2A, the homogenous coating layer 202 is formed on one or more first sidewalls 110 of the base portion 102. In at least one alternative embodiment, not shown in the present disclosure, the homogenous coating layer 202 is formed on the second surface 108 of the base portion 102. In various alternative embodiments, not shown in the present disclosure, the homogenous coating layer 202 is formed on any one, combination, or all of the first surface 106, one or more first sidewalls 110, and second surface 108 of the base portion 102. The selection of which of the first surface 106, the one or more first sidewalls 110, and the second surface 108 to coat with the homogeneous coating layer 202 depends on which of the surfaces of the base portion 102 would be exposed to gas during processing of the workpiece if not coated with the homogeneous coating layer 202 to prevent contaminants from being released by the base portion 102 during processing of the workpiece. This release may be referred to as "outgassing." In other words, the presence of the homogeneous coating layer 202 prevents the base portion 102 from "outgassing" any contaminants into the cavity 412 of the heating chamber 400 and from exposing the semiconductor wafer to contaminants due to this "outgassing."

Although the present disclosure describes forming the homogenous coating layer 202 on a substrate 102 that may be utilized in assembling or forming the heating chamber 400, or on a support plate or disk 522 utilized in the heating chamber 500, it will be readily understood that the homogenous coating layer 202 may be formed on other respective surfaces of other respective structures or components that are generally graphite-based, graphene-based, graphite, or graphene structures or components. These other respective structures or components may be utilized to form yet other alternative embodiments of the heating chamber, which may have different sizes and shapes than the embodiments of the heating chambers 400, 500 (see Figures 3A, 3B, and 4 of the present disclosure) previously described in detail herein. In other words, these alternative embodiments of the heating chamber may be constructed and arranged to receive components of different sizes and shapes for processing or manufacturing during operation than the components of different sizes and shapes inserted into the embodiments of the heating chambers 400, 500 (see Figures 3A, 3B, and 4 of this disclosure) as described in detail above. For example, the base portion 102 may have an oval, square, diamond, plus, trapezoid, or any other type of shape, contour, or three-dimensional prism that is utilized in forming the alternative embodiments of the heating chamber.

At least one embodiment of the device of the present disclosure may be summarized as including: a substrate of a heating chamber of a heating element, the substrate including a first surface; and a silicon-carbon layer on the first surface of the substrate, the silicon-carbon layer having a plurality of grains having a grain size within a grain size range of 1 μm to 5 μm, or equal to the upper and lower ends of this grain size range, and a carbon-to-silicon ratio within a range of 0.5 to 2.5, or equal to the upper and lower ends of this silicon-carbon range.

The silicon carbide layer can be configured to withstand temperatures of at least 1700 degrees Celsius during operation.

The silicon carbide layer may include a third surface spaced apart from the first surface of the substrate, and the plurality of crystal grains are substantially uniform in grain size between the first surface and the third surface.

The silicon carbide layer may have a thickness within a thickness range of 1 μm to 10 μm extending from the first surface to the third surface, or a thickness equal to the upper and lower ends of this thickness range.

Each of the multiple crystal grains may have a non-columnar structure.

A first grain size distribution of the plurality of grains at a third surface of the silicon carbide layer spaced from the first surface of the substrate may be substantially equal to a second grain size distribution of the plurality of grains at the first surface of the substrate.

A third grain size distribution of the plurality of grains between the third surface of the silicon carbide layer and the first surface of the substrate may be substantially equal to the first grain size distribution and the second grain size distribution.

Each of the multiple grains may be a non-columnar grain.

The substrate may be at least one of the following: a graphite substrate and a graphene substrate.

At least one embodiment of the device of the present disclosure may be summarized as including: a substrate including a first surface and a second surface opposite the first surface; a silicon carbide layer directly bonded to the first surface of the substrate, the silicon carbide layer having a third surface directly bonded to the first surface, a fourth surface spaced from the first surface and facing away from the first surface, a thickness extending from the third surface to the fourth surface, and a homogenous distribution of grain sizes of a plurality of grains along the entire thickness.

The silicon carbide layer may further have a carbon to silicon ratio in the range of 0.5 to 2.5, or equal to the upper and lower ends of this range. In other words, the carbon to silicon ratio is in the range of 0.5 and 2.5, inclusive.

The grain size of the plurality of grains may be within the grain size range of 1 μm to 5 μm, or may be equal to the upper and lower ends of this grain size range. In other words, the grain size is within the range including 1 μm and 5 μm.

The silicon carbide layer may have a thickness within a thickness range of 3 μm to 30 μm extending from the first surface to the third surface, or a thickness equal to the upper and lower ends of this thickness range. The thickness is within the range of 3 μm and 30 μm, inclusive.

The silicon carbide layer can be configured to withstand temperatures of at least 1700 degrees Celsius during operation.

Each of the multiple grains may be a non-columnar grain.

At least one embodiment of the method of the present disclosure can be summarized as including: forming a silicon carbide layer having a homogeneous grain size distribution on a surface of a graphite substrate, the forming comprising exposing the surface of the graphite substrate to a first ratio of silicon and carbide for a first selected period of time, and exposing the surface of the graphite substrate to a second ratio of silicon and carbide for a second selected period of time.

The first selected period and the second selected period may be equal to each other.

The first selected period and the second selected period may be equal to one hour.

The first ratio may be a 1:1 silicon to carbon ratio.

The second ratio may be a silicon to carbon ratio of 1:2.

The various embodiments described above can be combined to provide further embodiments. Aspects of the embodiments can be modified, if necessary, to employ concepts from various patents, applications, and publications to provide further embodiments.

These and other changes can be made to the embodiments in light of the above detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and claims, but rather to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Therefore, the claims are not limited by this disclosure.

Claims (20)

A device, comprising:
a substrate of a heating chamber of the heating element, the substrate including a first surface;
a silicon carbide layer on the first surface of the substrate,
a plurality of grains having a grain size within a grain size range of 1 μm to 5 μm or at the upper and lower ends of said grain size range;
a carbon to silicon ratio in the range of 0.5 to 2.5, or equal to the upper and lower ends of said silicon-carbon ratio range;
a silicon carbide layer having
A device comprising: The device of claim 1, wherein the silicon carbide layer is configured to withstand temperatures of at least up to 1700 degrees Celsius during operation. The device of claim 1, wherein the silicon carbide layer includes a third surface spaced apart from the first surface of the substrate, and the plurality of grains are substantially uniform in grain size between the first surface and the third surface. The device of claim 3, wherein the silicon carbide layer has a thickness within a thickness range of 3 μm to 30 μm extending from the first surface to the third surface, or a thickness equal to the upper and lower ends of the thickness range. The device of claim 1, wherein each grain of the plurality of grains has a non-columnar structure. The device of claim 1, wherein a first grain size distribution of the plurality of grains at a third surface of the silicon carbide layer spaced from the first surface of the substrate is substantially equal to a second grain size distribution of the plurality of grains at the first surface of the substrate. The device of claim 6, wherein a third grain size distribution of the plurality of grains between the third surface of the silicon carbide layer and the first surface of the substrate is substantially equal to the first grain size distribution and the second grain size distribution. The device of claim 7, wherein each of the plurality of grains is a non-columnar grain. The device of claim 1, wherein the substrate is at least one of the following: a graphite substrate and a graphene substrate. A device, comprising:
a substrate including a first surface and a second surface opposite the first surface;
a silicon carbide layer directly bonded to the first surface of the substrate,
a third surface directly bonded to the first surface;
a fourth surface spaced apart from the first surface and facing away from the first surface; and
a thickness extending from the third surface to the fourth surface;
a homogeneous distribution of grain size of the plurality of grains along the entire thickness;
a silicon carbide layer having
A device comprising: The device of claim 10, wherein the silicon carbide layer further has a carbon to silicon ratio in the range of 0.5 to 2.5, or a carbon to silicon ratio equal to the upper and lower ends of the range. The device of claim 10, wherein the grain size of the plurality of grains is within a grain size range of 1 μm to 5 μm or is equal to the upper and lower ends of the grain size range. The device of claim 10, wherein the silicon carbide layer has a thickness within a thickness range of 3 μm to 30 μm extending from the first surface to the third surface, or a thickness equal to the upper and lower ends of the thickness range. The device of claim 10, wherein the silicon carbide layer is configured to withstand temperatures of at least up to 1700 degrees Celsius during operation. The device of claim 10, wherein each of the plurality of grains is a non-columnar grain. 1. A method comprising:
forming a silicon carbide layer having a homogeneous grain size distribution on a surface of a graphite substrate,
exposing the graphite surface of the substrate to a first ratio of silicon and carbide for a first selected period of time;
exposing the graphite surface of the substrate to a second ratio of silicon and carbide for a second selected period of time;
forming a silicon carbide layer comprising: 17. The method of claim 16, wherein the first selected period and the second selected period are equal to each other. 18. The method of claim 17, wherein the first selected period and the second selected period are equal to one hour. The method of claim 16, wherein the first ratio is a 1:1 silicon to carbon ratio. 20. The method of claim 19, wherein the second ratio is a silicon to carbon ratio of 1:2.