JP2001318720A - Temperature control method and device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a plate temperature promptly reach and be set at a new target temperature even when transient heat exchange is generated between a chamber and a plate at the time of changing the target temperature of a temperature adjustment plate inside a semiconductor processing chamber. SOLUTION: At the time of switching the target temperature 100 of the plate from T1 to higher T2, the target temperature 100 is first switched to T3 higher than T2 for prescribed additional temperature α and thereafter, when the plate temperature 200 becomes close to T2, the target temperature 100 is gradually returned from T3 to the original value T2. Similarly, at the time of switching the target temperature 100 from T2 to lower T1, the target temperature 100 is first switched to the temperature lower than T1 for the prescribed additional temperature α and thereafter, when the plate temperature 200 becomes close to T1, the target temperature 100 is gradually returned to T1.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a temperature control method and apparatus suitable for controlling a temperature of a wafer in a semiconductor processing chamber, for example, and more particularly, to a temperature control method when a target temperature is changed. Regarding improvement.

[0002]

2. Description of the Related Art Generally, a flat temperature control plate having an electric heater and a cooling fluid passage is disposed in a semiconductor process chamber, and a semiconductor wafer to be processed is mounted on the temperature control plate. Is done. And, while processing is performed on the wafer in that chamber,
In order to keep the temperature of the wafer constant at the target temperature,
The power of the electric heater of the temperature control plate and the flow rate of the cooling fluid are controlled.

[0003]

In some cases, the target temperature of the temperature control plate in the chamber is always constant.
In some cases, the target temperature is switched to another value according to a change in the processing content. In the latter case, when the target temperature switches from the previous temperature to the new temperature, the power of the electric heater of the temperature control plate and the flow rate of the cooling fluid are controlled so that the temperature of the wafer matches the new target temperature. . With this control, the temperature of the wafer quickly reaches the new target temperature.

However, the chamber around the temperature adjustment plate and the wafer usually has a much larger heat capacity than the temperature adjustment plate, so that the temperature adjustment plate quickly balances with the new target temperature. Unable to reach a loose new temperature. As a result, for a while (for example, about 10 minutes) immediately after the target temperature is switched, a large amount of radiant heat enters from the chamber to the wafer and the temperature control plate (when the target temperature drops), or Transient heat exchange occurs between the chamber and the wafer and the temperature adjustment plate, such as when a large amount of radiant heat is emitted from the wafer and the temperature adjustment plate to the chamber (when the target temperature is increased). The temperature of the wafer (if the target temperature decreases) until the transient heat exchange subsides and a steady thermal balance is formed between the chamber and the wafer and temperature control plate.
The temperature becomes higher than the target temperature, and becomes lower than the target temperature (when the target temperature rises). As a result, for a while immediately after the target temperature is switched, there is a problem that the temperature of the wafer cannot be accurately controlled even if the wafer is placed on the temperature adjustment plate.

[0005] Such a problem is not limited to the temperature control of the wafer in the semiconductor processing chamber. Another object exists near the temperature control target, and when the target temperature is changed, the temperature control target and the other object are not connected. It is a common problem for temperature control in environments where a significant amount of transient heat exchange occurs between the two.

Accordingly, an object of the present invention is to quickly change the temperature of a temperature controlled object to a new temperature even when a transient heat exchange occurs between the temperature controlled object and another object in the vicinity when the target temperature is changed. It is to settle by reaching the target temperature.

[0007]

SUMMARY OF THE INVENTION A temperature control method according to a first aspect of the present invention is a method of controlling a temperature of a temperature controlled object when a transient heat exchange occurs between the temperature controlled object and another object. The step of correcting the target temperature from the original target temperature by a predetermined additional temperature, and in a case where heat is discharged from the temperature control target by the transient heat exchange, the target temperature is corrected by the predetermined additional temperature. A step of setting the target temperature higher than the original target temperature and setting the target temperature lower than the original target temperature by a predetermined additional temperature when heat enters, and setting the target temperature after setting the target temperature in this way. Gradually returning to the original target temperature.

A temperature control apparatus according to a second aspect of the present invention sets a target temperature of a temperature controlled object to a predetermined temperature when a transient heat exchange occurs between the temperature controlled object and another object. Means for correcting from the original target temperature by the additional temperature, and when heat is emitted from the temperature controlled object by the transient heat exchange, the target temperature is corrected by a predetermined additional temperature to the original target temperature. Target temperature correction means for setting the target temperature lower than the original target temperature by a predetermined additional temperature when heat enters, and after setting the target temperature, Target temperature return means for gradually returning to the original target temperature.

In the temperature control plate in the semiconductor processing chamber, as described above, when the target temperature of the temperature control plate is switched to another temperature, a transient heat exchange occurs between the chamber and the temperature control plate. . Therefore, in a preferred embodiment of the present invention applied to this temperature control plate, when it becomes necessary to switch the target temperature of the temperature control plate, which is the object of temperature control, from the first temperature to a higher second temperature, First, the target temperature is switched to a third temperature that is higher than the second temperature by a predetermined additional temperature, and then the target temperature is gradually returned from the third temperature to the second temperature. To go. When it becomes necessary to switch the target temperature from the fourth temperature to a lower fifth temperature, first, the sixth temperature lowers the target temperature by a predetermined additional temperature from the fifth temperature. After that, the target temperature is gradually returned from the sixth temperature to the fifth temperature.

Further, in this preferred embodiment, while the target temperature of the temperature control plate is kept constant and the temperature of the temperature control plate is constantly controlled near the target temperature, When the wafer is placed on the plate, transient heat exchange occurs between the temperature control plate and the wafer. (In general terms, even when another object approaches the temperature control target, transient heat exchange occurs between the temperature control target and the other object.) In such a case, first, the target temperature of the temperature adjustment plate is switched to a temperature higher than the original target temperature by a predetermined additional temperature, and then the target temperature is gradually returned to the original target temperature. .

[0011]

FIG. 1 schematically shows a schematic configuration of an apparatus for controlling the temperature of a temperature adjusting plate disposed in a semiconductor processing chamber according to an embodiment of the present invention.

As shown in FIG. 1, a semiconductor processing chamber 1
Numeral 0 has a main body 12 and a lid 11 for opening and closing the main body 12, in which a temperature control plate 20 is arranged. The temperature control plate 20 has a thin flat plate shape, a cooling fluid passage 22 passes through the inside thereof, and a thin film electric heater 21 is attached to the upper surface (or both the lower surface and the upper and lower surfaces) thereof. Have been. Furthermore, inside the temperature control plate 20, a plurality of temperature sensors 23a, 23b for measuring the temperature of several places of the temperature control plate 20, respectively.
23c is embedded. Although not shown, when a semiconductor wafer is processed in the chamber 10, the semiconductor wafer is mounted on the upper surface of the temperature control plate 20,
The temperature of the semiconductor wafer is controlled to be constant at a predetermined processing temperature by the temperature control plate 20.

The cooling fluid passage 22 inside the temperature control plate 20 is connected to a cooling fluid source 40 via a circulation pipe 30. The circulation pipe 30 is provided with an electromagnetic valve 50 for flowing and stopping the cooling fluid. If the electromagnetic valve 50 is open, the cooling fluid flows at a constant flow rate. At this time, the cooling fluid is adjusted to a predetermined constant temperature in the cooling fluid source 40 and exits from the cooling fluid source 40 to the temperature adjustment plate 20. The cycle of entering, removing heat from the temperature control plate 20 through the cooling fluid passage 22 inside the temperature control plate 20, and then exiting the temperature control plate 20 and returning to the cooling fluid source 40 is repeated. Solenoid valve 50
When is closed, the flow of the cooling fluid is stopped.

The electric heater 21 is connected to a power supply 60 for supplying power to the electric heater 21. The power supply 60 continuously and rapidly supplies electric power to the electric heater 21 in a range from zero to a predetermined maximum value. It is configured so that it can be adjusted.

A controller 70 for controlling the temperature of the temperature control plate 20 to a predetermined target temperature is provided, for example, a computer in which a temperature control program is installed. The controller 70 controls the temperature sensors 23a, 23b, 23 in the temperature control plate 20.
c, a temperature detection signal 71 (simply shown by a single line in the figure, there are signals for the number of sensors), and based on this, a control process described later is performed, and as a result, the electromagnetic valve Valve control signal 7 for opening and closing 72
2 is added to the electromagnetic valve 50, and a heater power control signal 73 for controlling the power supplied from the power supply 60 to the electric heater 21 is applied to the power supply 60.

The operation of this embodiment will be described below. FIG. 2 shows a control method performed by the controller 70 when the target temperature of the temperature control plate 20 is switched to a higher temperature than before, and FIG. 3 shows a flow of information processing of the controller 70 when the control method is performed. . FIG. 4 shows a control method performed by the controller 70 when switching the target temperature of the temperature adjustment plate 20 to a lower temperature than before, and FIG. 5 shows a flow of information processing of the controller 70 when performing the control method. .

The control examples shown in FIGS. 2 and 4 are examples in which the target temperature of the temperature control plate 20 is switched between a low temperature T1 = 70 ° C. and a high temperature T2 = 150 ° C. A solid line curve 100 in the figure indicates a target temperature of the temperature control plate 20 set by the controller 70, and a one-dot chain line curve 20.
0 indicates the actual temperature of the temperature control plate 20. Below these curves 100 and 200, a change in the mode of control of the electric heater 21 power (heater power) performed by the controller 70 and a change in the mode of control of the flow of the cooling fluid are shown. The controller 70 controls the heater power basically by controlling the temperature sensors 23a and 23a.
b, and a feedback PID control method using the detected temperature and the target temperature fed back from 23c.

In the heater power control, as shown in FIG.
There are three types of PID control modes, namely, “steady”, “heating”, and “cooling”, and four modes, that is, “OFF”, which is a mode in which the heater power is set to zero and heating is not performed.
Here, the “steady state” mode is a mode in which the heater power is adjusted using PID parameters suitable for keeping the temperature of the temperature adjustment plate 20 stable and constant around the target temperature. The “heat-up” mode is a mode in which heater power is adjusted using PID parameters suitable for quickly raising the temperature of the temperature adjustment plate 20 to a higher target temperature. The "cooling down" mode uses a PID parameter suitable for quickly bringing the temperature of the temperature adjusting plate 20 falling by the action of the cooling fluid or natural heat radiation to a slightly lower target temperature without overshooting. This is a mode for adjusting the heater power.

The controller 70 controls the flow of the cooling fluid by opening and closing the electromagnetic valve 50. As shown in the figure, there is a mode in which the electromagnetic valve 50 is closed to stop the flow of the cooling fluid by closing the electromagnetic valve 50. And a mode in which the electromagnetic valve 50 is opened and the cooling fluid flows at a constant flow rate.

First, a control method for switching the target temperature from the low temperature T1 to the high temperature T2 will be described with reference to FIGS.

First, when the target temperature 100 is constant at T1 = 70 ° C., the heater power is set to the PID in the “steady” mode.
It is controlled (step S0 in FIG. 3).

The target temperature is changed from T1 = 70 ° C. to T2 = 150
When the point in time to switch to the temperature is reached, first, the PID control mode of the heater power is switched to the "heating" mode (S1), and at the same time, the target temperature 100 is slightly higher than the original new target temperature T2 = 150 ° C. Is switched to the higher temperature T3 by the additional temperature α (S2). As a result, the plate temperature 200 rises quickly, but the temperature of the chamber 10 cannot follow this rapid temperature rise.
Transient heat exchange occurs between the chamber 10 and the wafer and the temperature adjustment plate 20. The reason why the target temperature 100 is set to the temperature T3 which is higher than the original new target temperature T2 by the additional temperature α is that the transient heat exchange is compensated and the temperature of the wafer can smoothly reach the new target temperature of the wafer. That's why. Specific values of the additional temperature α include various characteristics of the control system, such as the heat capacity of the chamber 10, the heat capacity of the temperature control plate 20, the heat capacity of the wafer, and the electric heater 2.
1, the difference between the previous target temperature T1 and the new target temperature T2, and the value of the PID control parameter in the "heating" mode.
I'm K Therefore, T3 is 150.8 ° C.

The plate temperature 200 is equal to the original new target temperature T.
2 = 150 ° C., the controller 70 calculates the rising gradient of the plate temperature 200 and compares it with a predetermined value (S3). When the rising gradient becomes smaller than the predetermined value, the controller 70 calculates the rising gradient. , Heater power control "steady"
The mode is returned to (S4).

The controller 70 has a target temperature of 10
The elapsed time after switching 0 to the high temperature T3 is measured, and it is checked whether the elapsed time has reached a predetermined time to maintain the high target temperature T3 (S5). (Point P1) Next, the target temperature 100 is gradually lowered to gradually return to the original new target temperature T2 (S6). The target temperature 100 is changed to the original new target temperature T2.
The method of returning to may be changed stepwise as shown in FIG. 6A, or may be changed continuously steplessly as shown in FIG. 6B. . The reason for gradually lowering the target temperature 100 toward the new target temperature T2 is that the amount of transient heat exchange between the chamber 10 and the wafer and the temperature adjustment plate 20 gradually decreases with time. Because it goes.

Finally, the target temperature 100 becomes the new target temperature T2.
(Point P2 in FIG. 2) is reached when the chamber 10
Is set to substantially coincide with the point in time when a steady thermal balance has been established between the chamber 10 and the wafer and the temperature adjustment plate 20 by sufficiently raising the temperature of the chamber 10. Specific set values of the time required from the time when the target temperature 100 is raised to T3 to the time when the target temperature 100 is completely returned to T2 are determined by various characteristics of the control system, for example, the heat capacity of the chamber 10, the heat capacity of the temperature control plate 20, the wafer Although it depends on the heat capacity, the maximum output power of the electric heater 21, the difference between the previous target temperature T1 and the new target temperature T2, and the PID control parameter values in the “heating” mode and the “steady” mode, for example, 8 minutes to 1 minute
It takes about 0 minutes.

After the target temperature 100 has completely returned to T2, the heater power is controlled in the "steady" mode at the target temperature T2 (S7). During the above control, the electromagnetic valve 50 of the cooling fluid circulation system remains closed, and the flow of the cooling fluid is stopped.

Next, a control method for switching the target temperature from the high temperature T2 to the low temperature T1 will be described with reference to FIGS.

First, when the target temperature 100 is constant at T2 = 150 ° C., the heater power is set to PI in the “steady” mode.
D control is performed (step S10 in FIG. 5).

The target temperature is changed from T2 = 150 ° C. to T1 = 70
When the point in time to switch to
It is determined whether the difference between 2 and T1 (that is, the amount of decrease in the target temperature) is larger than a predetermined value (S11). The mode is switched to the "OFF" mode (that is, the heater power is set to zero) (S12).
The cooling operation is started by opening the electromagnetic valve 50 of the cooling fluid circulation system and flowing the cooling fluid at a constant flow rate (S13). As a result, the plate temperature 200 rapidly decreases.
If the amount of decrease in the target temperature is smaller than the predetermined value in step S11 (No in S11), the cooling power is not supplied, and the heater power control in the "cooling down" mode after step S16 described later is performed. to go into.

While the cooling fluid is flowing to lower the plate temperature 200, the controller 70
It is checked whether or not 00 has reached the valve closing temperature T4 which is higher than the original new target temperature T1 by a predetermined value (S14). When the temperature reaches 00, the electromagnetic valve 50 is closed to stop the flow of the cooling fluid (S15). Then, the control of the heater power in the "cooling down" mode is started (S16), and at the same time, the target temperature 100 of the temperature control plate 2 is switched to a temperature T5 lower than the original new target temperature T1 by a slight additional temperature α (S1).
7). The reason that the target temperature 100 is set to the temperature T5 lower than the original new target temperature T1 by the additional temperature α is that the transient heat exchange between the chamber 10 and the wafer and the temperature adjustment plate 20 immediately after the target temperature 100 is lowered is performed. This is to compensate so that the temperature of the wafer can quickly reach the new target temperature of the wafer. The specific value of the additional temperature α is
Various characteristics of the control system, for example, the heat capacity of the chamber 10, the heat capacity of the temperature control plate 20, the heat capacity of the wafer, the maximum output power of the electric heater 21, the difference between the previous target temperature T1 and the new target temperature T2, and "temperature increase" Although it depends on the PID control parameter value in the "" mode, it is set to 0.8K in this embodiment. Therefore, T5 is 69.2 ° C.

The plate temperature 200 is equal to the original new target temperature T.
When the temperature falls to a certain level of 1 = 70 ° C., the controller 70 calculates the falling gradient of the plate temperature 200 and compares it with a predetermined value (S18). , Heater power control "steady"
The mode is returned to (S19).

Further, the controller 70 sets the target temperature 10
The elapsed time after switching 0 to the low temperature T5 is measured, and it is checked whether the elapsed time has reached a predetermined time for maintaining the low target temperature T5 (S20). (Point P3) Next, the target temperature 100 is gradually increased to gradually return to the original new target temperature T1 (S21). A method of returning the target temperature 100 to the original new target temperature T1 is to change the temperature stepwise as shown in FIG. 6A (although the direction in which the temperature is changed is opposite to that in FIG. 6). Alternatively, as shown in FIG. 6 (B), it may be continuously and continuously changed. The reason for gradually increasing the target temperature 100 toward the new target temperature T1 is that the amount of transient heat exchange between the chamber 10 and the wafer and the temperature adjustment plate 20 gradually decreases with time. Because it goes.

Finally, the target temperature 100 becomes the new target temperature T1.
(Point P4 in FIG. 5) is reached when the chamber 10
Is set so as to substantially coincide with the point in time when a steady thermal balance is established between the chamber 10 and the wafer and the temperature control plate 20 by sufficiently lowering the temperature. Specific set values of the time required from the time when the target temperature 100 is lowered to T5 to the time when the target temperature 100 is completely returned to T1 are various characteristics of the control system, for example, the heat capacity of the chamber 10, the heat capacity of the temperature control plate 20, the wafer It depends on the heat capacity, the maximum output power of the electric heater 21, the difference between the previous target temperature T1 and the new target temperature T2, the flow rate and temperature of the cooling fluid, and the PID control parameter values in the "cooling down" mode and the "steady" mode. For example, about 8 to 10 minutes.

After the target temperature 100 has completely returned to T1, the heater power is controlled in the "steady" mode at the target temperature T1 (S22).

As described above, when the target temperature of the temperature control plate 20 is switched, the target temperature is switched by a little more than the original switching width of the target temperature, and thereafter, the target temperature is changed to the original new target temperature. Is controlled to gradually return to. This compensates for transient heat exchange between the chamber 10 and the wafer and the temperature adjustment plate 20 immediately after switching of the target temperature,
The temperature of the wafer can smoothly and quickly reach the target temperature of the wafer. As a result, after switching the target temperature, the processing can be started by placing the wafer on the temperature control plate 20 from an early stage without waiting until the temperature of the chamber 10 is stabilized.

Although not shown in the graphs of FIGS. 2 and 3, when the wafer is placed on the temperature control plate 20 whose temperature is stably controlled near the target temperature, the wafer and the temperature control plate 20 are not moved. And a transient heat exchange occurs between the temperature adjustment and the temperature of the temperature adjustment plate 20 slightly lower than the target temperature. As a result, the time required for the temperature of the wafer to rise and reach the optimum temperature and settle becomes longer. In order to solve this problem, in the present embodiment, even when a wafer is placed on the temperature adjustment plate 20, the target temperature of the temperature adjustment plate 20 is set to be slightly higher than the original target temperature, and thereafter the original target temperature is gradually increased. Control to return to.

FIG. 7 shows a temperature control method performed by the controller 70 when a wafer is placed on the temperature control plate 20, and FIG. 8 shows a flow of information processing by the controller 70 when the temperature control method is performed. Show. In FIG. 7, a curve 300 indicates the target temperature of the temperature control plate, and a curve 40
0 indicates the temperature of the wafer.

When the temperature of the temperature control plate 20 is in a steady state near a predetermined target temperature T10 (for example, 150 ° C.) (step S30 in FIG. 8), the temperature control plate 20
When a normal-temperature wafer is placed on the wafer (S31), the controller 70 sets the target temperature 100
Is switched to a temperature T11 slightly higher than T10 by an additional temperature β (S32). Here, the additional temperature β is for compensating that the heat of the temperature control plate 20 is deprived by the wafer so that the temperature of the wafer quickly rises. For example, the heat capacity and the original temperature of the wafer, the heat capacity and the target temperature of the temperature control plate, the maximum power of the electric heater, the PI of the heater power control
Although it depends on the value of the D parameter, it is 0.2K in this embodiment.

Thereafter, the controller 70 measures the elapsed time after switching the target temperature to T11, and determines whether or not the elapsed time has reached a predetermined time for maintaining T11 (S33). (Point P5 in FIG. 7),
The target temperature is gradually decreased toward the original value T10 (S34). The reason for the gradual lowering is that the amount of heat exchange between the wafer and the temperature control plate 20 gradually decreases with time. The way of this descent is also shown in FIG.
6B, or may be continuous without any step as shown in FIG.

The point in time when the target temperature completely returns to the original value T10 (point P6 in FIG. 7) is set to substantially coincide with the point in time when the wafer temperature 400 reaches the optimum temperature and settles. After the wafer is placed, the target temperature becomes the original value T
The time required to completely return to 10 varies depending on the characteristics of the control system, but is, for example, about several tens of seconds to about one minute. With the above control, the wafer temperature 400 reaches the optimum temperature smoothly and quickly and is settled.

The above-described embodiment is merely an example for explaining the present invention, and is not intended to limit the scope of the present invention only to this embodiment. The present invention can be implemented in various forms other than the above-described embodiment. For example, in the above-described embodiment, a plurality of modes such as “steady”, “heating”, and “cooling” are provided and used as PID control of the heater power, but the control is simply performed by only one “steady” mode. Alternatively, more modes than in the embodiment may be provided and used properly. Cooling fluid flow control
In addition to the simple on / off control, the flow rate may be adjusted by a proportional valve, a pump speed, or the like. An infrared lamp may be used instead of the electric heater.

When switching the target temperature, the target temperature is set to a value T + α higher than the original value T by α (or a lower value T−α).
After switching to α), various methods other than the embodiment can be adopted as a method of returning the target temperature to the original value T. For example, instead of the multi-step or continuous changing method as shown in FIG.
Then, after maintaining the predetermined time t1, the switching to T + α / 2 is performed, the maintenance is continued for the predetermined time t2, and then the switching to T may be performed.

The control described with reference to FIGS. 2 to 5 is a case where the target temperature is switched while the wafer is placed on the heat exchange plate. Even when the temperature is switched, control according to the principle of the present invention can be performed.

The present invention can be applied not only to temperature control of a wafer in a semiconductor processing chamber but also to temperature control for other purposes.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a schematic configuration of an apparatus for controlling the temperature of a temperature adjustment plate disposed in a semiconductor processing chamber according to an embodiment of the present invention.

FIG. 2 is a diagram showing a control method performed by a controller 70 when switching a target temperature of a temperature adjustment plate 20 to a higher temperature than before.

FIG. 3 shows a controller 70 for performing the control method of FIG. 2;
4 is a flowchart showing the flow of the information processing.

FIG. 4 is a diagram showing a control method performed by a controller when switching a target temperature of the temperature adjustment plate to a lower temperature than before.

FIG. 5 shows a controller 70 for performing the control method of FIG.
4 is a flowchart showing the flow of the information processing.

FIG. 6 is a diagram showing two examples of how to change the target temperature when returning the target temperature to the original new target temperature.

FIG. 7 is a diagram showing a temperature control method performed by a controller when a wafer is placed on the temperature adjustment plate.

8 is a diagram showing a controller 7 when the temperature control method shown in FIG. 7 is performed.
9 is a flowchart illustrating a flow of information processing of No. 0.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 Semiconductor processing chamber 20 Temperature control plate 22 is a cooling fluid passage 21 Thin-film electric heater 23a, 23b, 23c Temperature sensor 40 Cooling fluid source 50 Electromagnetic valve 60 Power supply 70 Controller 100, 110, 120, 300 Target temperature of temperature control plate 200 Actual temperature of temperature control plate 400 Temperature of wafer on temperature control plate

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Katsuhiro Noya 1200 Manda, Hiratsuka-shi, Kanagawa Prefecture Inside Komatsu Seisakusho Laboratory (72) Inventor Eibu Masutani 1200 Manda, Hiratsuka-shi, Kanagawa Prefecture Komatsu Seisakusho F Terms (reference) 3K058 AA73 BA18 CA23 5F045 EJ03 EJ09 EK08 EK27 EM02 GB05 GB16 5H323 AA05 BB04 CA09 CB02 CB22 CB44 EE03 FF03 FF10 KK05 NN03

Claims (4)

[Claims] When a transient heat exchange occurs between a temperature controlled object and another object, a target temperature of the temperature controlled object is corrected from an original target temperature by a predetermined additional temperature. In the step, when heat is emitted from the temperature controlled object by the transient heat exchange, the target temperature is higher than the original target temperature by a predetermined additional temperature, and heat is input. Setting the target temperature lower than the original target temperature by a predetermined additional temperature, and gradually returning the target temperature to the original target temperature after setting the target temperature in the step. When,
A temperature control method having: 2. When a transient heat exchange occurs between the temperature control target and another object, the target temperature of the temperature control target is corrected from the original target temperature by a predetermined additional temperature. Means for heating the target temperature higher than the original target temperature by a predetermined additional temperature when heat is discharged from the temperature controlled object by the transient heat exchange, and heat is input. In this case, a target temperature correcting means for setting the target temperature lower than the original target temperature by a predetermined additional temperature, after the target temperature correcting means sets the target temperature,
A temperature control device comprising: target temperature return means for gradually returning the target temperature to the original target temperature. 3. When there is a need to switch the target temperature from the first temperature to a higher second temperature, first, the target temperature correcting means converts the target temperature from the second temperature by the additional temperature. The target temperature is gradually increased from the third temperature to the second temperature, and the target temperature is returned from the fourth temperature to the third temperature. When it becomes necessary to switch to the lower fifth temperature, first, the target temperature correcting means switches the target temperature to a sixth temperature lower than the fifth temperature by the additional temperature, and Returning means for setting the target temperature from the sixth temperature to the fifth temperature;
The temperature control device according to claim 2, wherein the temperature is gradually returned to the temperature. 4. The method according to claim 1, wherein the target temperature is kept constant at a first temperature and the temperature of the temperature control object is constantly controlled near the first temperature. When another object approaches the vicinity, first, the target temperature correction means switches the target temperature to a second temperature higher than the first temperature by the additional temperature, and then the target temperature return means Moving the target temperature from the second temperature to the first
The temperature control device according to claim 2, wherein the temperature is gradually returned to the temperature.