GB2149965B - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number: GB2149965B
Authority: GB; United Kingdom
Prior art keywords: semiconductor device; semiconductor
Prior art date: 1983-05-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB08500267A

Other versions

GB8500267D0 (en

GB2149965A (en

Inventor

Hisao Hayashi

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Sony Corp

Original Assignee

Sony Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-05-16

Filing date

1984-05-16

Publication date

1986-12-31

1984-05-16 Application filed by Sony Corp filed Critical Sony Corp

1985-02-13 Publication of GB8500267D0 publication Critical patent/GB8500267D0/en

1985-06-19 Publication of GB2149965A publication Critical patent/GB2149965A/en

1986-12-31 Application granted granted Critical

1986-12-31 Publication of GB2149965B publication Critical patent/GB2149965B/en

Status Expired legal-status Critical Current

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/112—Constructional design considerations for preventing surface leakage or controlling electric field concentration for preventing surface leakage due to surface inversion layers, e.g. by using channel stoppers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]

GB08500267A 1983-05-16 1984-05-16 Semiconductor device Expired GB2149965B (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP58085519A JPH0630355B2 (en)	1983-05-16	1983-05-16	Semiconductor device

Publications (3)

Publication Number	Publication Date
GB8500267D0 GB8500267D0 (en)	1985-02-13
GB2149965A GB2149965A (en)	1985-06-19
GB2149965B true GB2149965B (en)	1986-12-31

Family

ID=13861153

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB08500267A Expired GB2149965B (en)	1983-05-16	1984-05-16	Semiconductor device

Country Status (5)

Country	Link
JP (1)	JPH0630355B2 (en)
KR (1)	KR840009182A (en)
DE (1)	DE3490241T1 (en)
GB (1)	GB2149965B (en)
WO (1)	WO1984004628A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
GB8401250D0 (en) *	1984-01-18	1984-02-22	British Telecomm	Semiconductor fabrication
JPH0691075B2 (en) *	1985-06-17	1994-11-14	新日本無線株式会社	Semiconductor device
KR100266045B1 (en) *	1990-08-07	2000-09-15	야스카와 히데아키	Semiconductor device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3660735A (en) *	1969-09-10	1972-05-02	Sprague Electric Co	Complementary metal insulator silicon transistor pairs
US3700507A (en) *	1969-10-21	1972-10-24	Rca Corp	Method of making complementary insulated gate field effect transistors
DE2102918A1 (en) *	1970-01-26	1971-08-05	Itt Ind Gmbh Deutsche	Method for producing field insulation for semiconductor components
US3834959A (en) *	1972-06-30	1974-09-10	Ibm	Process for the formation of selfaligned silicon and aluminum gates
JPS4979782A (en) *	1972-12-08	1974-08-01
JPS582866A (en) *	1981-06-29	1983-01-08	Ricoh Co Ltd	Discharging method for recording body

1983
- 1983-05-16 JP JP58085519A patent/JPH0630355B2/en not_active Expired - Lifetime
1984
- 1984-05-15 KR KR1019840002622A patent/KR840009182A/en not_active Application Discontinuation
- 1984-05-16 GB GB08500267A patent/GB2149965B/en not_active Expired
- 1984-05-16 DE DE19843490241 patent/DE3490241T1/en not_active Withdrawn
- 1984-05-16 WO PCT/JP1984/000243 patent/WO1984004628A1/en active Application Filing

Also Published As

Publication number	Publication date
GB8500267D0 (en)	1985-02-13
JPH0630355B2 (en)	1994-04-20
DE3490241T1 (en)	1985-05-15
KR840009182A (en)	1984-12-24
WO1984004628A1 (en)	1984-11-22
GB2149965A (en)	1985-06-19
JPS59211235A (en)	1984-11-30

Legal Events

Date	Code	Title	Description
2004-06-09	PE20	Patent expired after termination of 20 years	Effective date: 20040515

Publication	Publication Date	Title
DE3476144D1 (en)	1989-02-16	Semiconductor device
GB2150753B (en)	1987-04-01	Semiconductor device
GB2137412B (en)	1987-03-04	Semiconductor device
GB2134705B (en)	1985-12-24	Semiconductor devices
DE3463873D1 (en)	1987-06-25	Semiconductor devices
GB8429171D0 (en)	1984-12-27	Semiconductor device
EP0138048A3 (en)	1986-12-30	Press-packed semiconductor device
EP0146194A3 (en)	1986-12-30	Semiconductor devices
GB2135511B (en)	1987-04-01	Semiconductor device
GB2135824B (en)	1986-10-01	Semiconductor device
GB8431761D0 (en)	1985-01-30	Semiconductor device
DE3469830D1 (en)	1988-04-14	Semiconductor device
DE3465224D1 (en)	1987-09-10	Semiconductor device
EP0148031A3 (en)	1987-07-01	Semiconductor device
DE3465553D1 (en)	1987-09-24	Semiconductor device
GB8429621D0 (en)	1985-01-03	Semiconductor device
GB8429865D0 (en)	1985-01-03	Semiconductor device
GB2143086B (en)	1987-03-04	Semiconductor device manufacture
EP0118102A3 (en)	1987-09-30	Semiconductor device
GB2139420B (en)	1987-04-29	Semiconductor devices
GB8312281D0 (en)	1983-06-08	Semiconductor devices
GB8405871D0 (en)	1984-04-11	Semiconductor device
DE3469114D1 (en)	1988-03-03	Semiconductor device
GB8430730D0 (en)	1985-01-16	Semiconductor device
GB8432417D0 (en)	1985-02-06	Semiconductor device