+

GB2011173A - Semiconductor device and method of producing the same - Google Patents

Semiconductor device and method of producing the same

Info

Publication number
GB2011173A
GB2011173A GB7847665A GB7847665A GB2011173A GB 2011173 A GB2011173 A GB 2011173A GB 7847665 A GB7847665 A GB 7847665A GB 7847665 A GB7847665 A GB 7847665A GB 2011173 A GB2011173 A GB 2011173A
Authority
GB
United Kingdom
Prior art keywords
layer
semiconductor device
producing
same
emitter region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GB7847665A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB2011173A publication Critical patent/GB2011173A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28525—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising semiconducting material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

In a semiconductor device, comprising an insulation layer 20 covering at least a base region 12 formed in a semiconductor substrate 10, base electrodes comprising polycrystalline Si layers 36a, 36b and metal layers 52a, 52b are formed in openings in layer 20, and an emitter region 16 is contacted by a polycrystalline silicon layer 34 and a metal layer 50 formed in another opening in layer 20. The emitter region 16 may be formed by diffusing an impurity through the undoped poly-Si layer 34 before applying layer 50. <IMAGE>
GB7847665A 1977-12-21 1978-12-08 Semiconductor device and method of producing the same Withdrawn GB2011173A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15284777A JPS5485680A (en) 1977-12-21 1977-12-21 Semiconductor device and its manufacture

Publications (1)

Publication Number Publication Date
GB2011173A true GB2011173A (en) 1979-07-04

Family

ID=15549422

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7847665A Withdrawn GB2011173A (en) 1977-12-21 1978-12-08 Semiconductor device and method of producing the same

Country Status (3)

Country Link
JP (1) JPS5485680A (en)
DE (1) DE2853872A1 (en)
GB (1) GB2011173A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2221570A1 (en) * 1971-05-03 1973-02-01 Motorola Inc Ohmic contacts for semiconductors - with highly doped silicon layer to prevent contamination
US3847687A (en) * 1972-11-15 1974-11-12 Motorola Inc Methods of forming self aligned transistor structure having polycrystalline contacts

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0052450A1 (en) * 1980-10-29 1982-05-26 Fujitsu Limited Method of manufacturing a semiconductor device with polycrystalline semiconductor cum metal electrodes
US4497106A (en) * 1980-10-29 1985-02-05 Fujitsu Limited Semiconductor device and a method of manufacturing the same

Also Published As

Publication number Publication date
DE2853872C2 (en) 1988-11-10
DE2853872A1 (en) 1979-06-28
JPS5485680A (en) 1979-07-07

Similar Documents

Publication Publication Date Title
GB2180991B (en) Method for forming silicide electrode in semiconductor device
GB2011173A (en) Semiconductor device and method of producing the same
JPS6454734A (en) Semiconductor device
JPS5638840A (en) Semiconductor device
JPS5638863A (en) Semiconductor device
JPS5753958A (en) Semiconductor device
JPS57192080A (en) Semiconductor device
JPS5552262A (en) Mos semiconductor device
JPS5461490A (en) Multi-layer wiring forming method in semiconductor device
JPS56130970A (en) Manufacture of semiconductor device
GB2004694A (en) Methods of manufacturing semiconductor devices
JPS5640276A (en) Preparation of semiconductor device
JPS52130580A (en) High densityintegrated circuit device
JPS55138833A (en) Manufacture of semiconductor device
JPS6453576A (en) Semiconductor device
JPS56142631A (en) Manufacture of semiconductor device
KR970009616B1 (en) Fabricating method of semiconductor device
JPS52138876A (en) Production of semiconductor device
JPS5687346A (en) Manufacture of semiconductor device
JPS5642373A (en) Manufacture of semiconductor device
JPS56138958A (en) Manufacture of semiconductor device
JPS5662370A (en) Manufacturing of semiconductor device
JPS55143068A (en) Insulated gate semiconductor device
JPS5623753A (en) Mos filed effect integrated circuit
JPS51120668A (en) Semiconductor device manufacturing method

Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)
点击 这是indexloc提供的php浏览器服务，不要输入任何密码和下载