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GB1280876A - Improvements in and relating to semiconductor devices - Google Patents

Improvements in and relating to semiconductor devices

Info

Publication number
GB1280876A
GB1280876A GB42024/69A GB4202469A GB1280876A GB 1280876 A GB1280876 A GB 1280876A GB 42024/69 A GB42024/69 A GB 42024/69A GB 4202469 A GB4202469 A GB 4202469A GB 1280876 A GB1280876 A GB 1280876A
Authority
GB
United Kingdom
Prior art keywords
type
regions
epitaxial layer
region
diffusing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB42024/69A
Inventor
Julian Robert Anthony Beale
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB42024/69A priority Critical patent/GB1280876A/en
Publication of GB1280876A publication Critical patent/GB1280876A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1280876 Semi-conductor devices MULLARD Ltd 22 Aug 1969 [30 Aug 1968] 42024/69 Heading H1K A region of a semi-conductor device is -produced by diffusing an impurity through the major part of the thickness of an epitaxial layer from a highly doped buried layer and diffusing a peripheral wall from the surface to meet the first diffused region, the substrate and epitaxial layer being of the same conductivity type. As shown, Fig. 7, phosphorus is diffused into selected areas of a P<SP>-</SP>-type Si substrate 31 to form N<SP>++</SP>-type regions and a P<SP>-</SP>-type epitaxial layer'34 is deposited, the phosphorus diffusing- out to 'form N-type regions 36 containing N<SP>+</SP>- type regions 35 at the sites of the original N<SP>++</SP>- type regions. Annular N<SP>+</SP>-type walls 37 are 'formed by diffusion to complete the isolation thus leaving enclosed portions (38) of the P<SP>-</SP> type epitaxial layer into which P-type base regions and N<SP>+</SP>-type emitter regions are 'diffused, the buried regions 36 forming the collectors of the transistors. In a modification, Fig. 8 (not shown), the annular N<SP>+</SP>-type walls are extended to contact the heavily doped part (35) of the initially formed buried layer and P-type grids (47, 48) are provided surrounding the N-type islands at the epitaxial layer-substrate interface and at the surface of the epitaxial layer to interrupt parasitic channels. The collector junction may be profiled by increasing 'the impurity concentration in that part of the N<SP>++</SP>-type buried layer which is to directly underlie the emitter region or by using an impurity of higher diffusivity in this region.
GB42024/69A 1968-08-30 1968-08-30 Improvements in and relating to semiconductor devices Expired GB1280876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB42024/69A GB1280876A (en) 1968-08-30 1968-08-30 Improvements in and relating to semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB42024/69A GB1280876A (en) 1968-08-30 1968-08-30 Improvements in and relating to semiconductor devices

Publications (1)

Publication Number Publication Date
GB1280876A true GB1280876A (en) 1972-07-05

Family

ID=10422487

Family Applications (1)

Application Number Title Priority Date Filing Date
GB42024/69A Expired GB1280876A (en) 1968-08-30 1968-08-30 Improvements in and relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB1280876A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011964B1 (en) * 1978-11-15 1984-09-05 Fujitsu Limited Semiconductor device including a diode and a bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0011964B1 (en) * 1978-11-15 1984-09-05 Fujitsu Limited Semiconductor device including a diode and a bipolar transistor

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee
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