GB1270215A - Improvements in or relating to semiconductor components - Google Patents
Improvements in or relating to semiconductor componentsInfo
- Publication number
- GB1270215A GB1270215A GB08923/70A GB1892370A GB1270215A GB 1270215 A GB1270215 A GB 1270215A GB 08923/70 A GB08923/70 A GB 08923/70A GB 1892370 A GB1892370 A GB 1892370A GB 1270215 A GB1270215 A GB 1270215A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- insulation
- contact
- terminal
- conductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
1,270,215. Semi-conductor devices. SIEMENS A.G. 21 April, 1970 [22 April, 1969], No. 18923/70. Heading H1K. A semi-conductor device has a surface covered with insulation carrying metal layers which each make contact with the semi-conductor through respective holes in the insulation. The metal layers are covered with a further layer of insulation through which an aperture extends to allow contact between a built-up terminal and a metal layer connected to a pn-junctionforming zone in the body, the terminal being designed to serve as a contact when the device is inserted into a housing. The planar diode shown has, in addition to its main electrode 6 and associated terminal 10, an annular fieldrelief electrode 7 and an (optional) heavily doped contact zone therefor.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19691920396 DE1920396A1 (en) | 1969-04-22 | 1969-04-22 | Arrangement for increasing the breakdown strength of semiconductor components |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1270215A true GB1270215A (en) | 1972-04-12 |
Family
ID=5731932
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB08923/70A Expired GB1270215A (en) | 1969-04-22 | 1970-04-21 | Improvements in or relating to semiconductor components |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH501312A (en) |
DE (1) | DE1920396A1 (en) |
FR (1) | FR2039342B1 (en) |
GB (1) | GB1270215A (en) |
NL (1) | NL7003491A (en) |
-
1969
- 1969-04-22 DE DE19691920396 patent/DE1920396A1/en active Pending
-
1970
- 1970-03-11 NL NL7003491A patent/NL7003491A/xx unknown
- 1970-04-16 FR FR7013784A patent/FR2039342B1/fr not_active Expired
- 1970-04-17 CH CH571570A patent/CH501312A/en not_active IP Right Cessation
- 1970-04-21 GB GB08923/70A patent/GB1270215A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
DE1920396A1 (en) | 1970-11-12 |
FR2039342B1 (en) | 1974-10-31 |
NL7003491A (en) | 1970-10-26 |
FR2039342A1 (en) | 1971-01-15 |
CH501312A (en) | 1970-12-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
MY6900284A (en) | Semiconductor devices containing two or more circuit elements therein | |
GB1191890A (en) | Semiconductor Controlled Rectifier Devices | |
ES393035A1 (en) | A SEMICONDUCTOR DEVICE. | |
GB935710A (en) | Improvements in controlled semiconductor rectifiers | |
GB1223705A (en) | Semiconductor devices | |
GB1270215A (en) | Improvements in or relating to semiconductor components | |
FR2373879A1 (en) | Mesa type diode semiconductor structure - has reduced mesa part and has highly doped residual substrate of small thickness | |
ES392402A1 (en) | A SEMICONDUCTOR DEVICE. | |
GB1208030A (en) | A semiconductor device | |
GB1318047A (en) | Insulated gate field effect transistors | |
JPS52149481A (en) | Semiconductor integrated circuit device and its production | |
JPS5357775A (en) | Semiconductor ingegrated circuit device | |
JPS5366369A (en) | Semiconductor device | |
GB1030670A (en) | Semiconductor devices | |
GB1495447A (en) | Semi-conductor switching device | |
GB1199448A (en) | Improved Electrode Lead for Semiconductor Devices. | |
GB916379A (en) | Improvements in and relating to semiconductor junction units | |
GB1302987A (en) | ||
FR2172200A1 (en) | ||
JPS53142878A (en) | Semiconductor device | |
GB1275498A (en) | Semiconductor device | |
GB990012A (en) | A semi-conductor rectifier device | |
GB983623A (en) | Improvements relating to semi-conductor devices | |
GB1039424A (en) | Semiconductor point contact devices | |
JPS51147929A (en) | Semiconductor memory |