GB1048424A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB1048424A GB1048424A GB34056/63A GB3405663A GB1048424A GB 1048424 A GB1048424 A GB 1048424A GB 34056/63 A GB34056/63 A GB 34056/63A GB 3405663 A GB3405663 A GB 3405663A GB 1048424 A GB1048424 A GB 1048424A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- junction
- type
- inclusion
- windows
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000009413 insulation Methods 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 230000008719 thickening Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Formation Of Insulating Films (AREA)
Abstract
1,048,424. Semi-conductor devices. INTERNATIONAL STANDARD ELECTRIC CORPORATION. Aug. 28, 1963, No. 34056/63. Addition to 1,007,936. Heading H1K. In a planar semi-conductor device comprising a zone of one conductivity type formed as an inclusion in the surface of a layer of uniform resistivity material of the opposite conductivity type the layer and its junction with the inclusion are insulation covered. A deposited metal electrode making contact with the inclusion extends across the junction over the insulation, which is made thinner where the junction surfaces than it is beyond this point. The thickness at the junction is chosen to provide optimum protection while the thickening elsewhere enables the parasitic capacitance between the electrode and the layer to be reduced. Capacitance may be further reduced by providing outside the junction beneath the insulation a zone making a PN junction with the layer, as in Fig. 2 (not shown). The transistor shown in Fig. 1 is produced in multiple by first providing an N-type layer on a lower resistivity N-type silicon wafer with an oxide layer 10, 2-10 Á thick, and forming windows therein by photolithographic techniques. The surface of the layer is again oxidized to a thickness of 0À5-1 Á within the windows. Apertures are then formed within the windows and boron diffused through them to form P-type base zones 2 in the layer. By a similar technique of phosphorus diffusion N-type emitter zones 3 are formed. Layers 4 and 5 are then partially exposed by removal of oxide and extended base and emitter contacts 8, 9 provided by vapour deposition of aluminium. The wafer is then subdivided and individual transistors mounted on collector headers. If germanium or gallium arsenide is used instead of silicon the oxide layers are provided by vapour deposition.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB34056/63A GB1048424A (en) | 1963-08-28 | 1963-08-28 | Improvements in or relating to semiconductor devices |
| DEST22582A DE1292759B (en) | 1963-08-28 | 1964-08-25 | Method for producing a feed line to a diffused semiconductor zone |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB34056/63A GB1048424A (en) | 1963-08-28 | 1963-08-28 | Improvements in or relating to semiconductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1048424A true GB1048424A (en) | 1966-11-16 |
Family
ID=10360824
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB34056/63A Expired GB1048424A (en) | 1963-08-28 | 1963-08-28 | Improvements in or relating to semiconductor devices |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1292759B (en) |
| GB (1) | GB1048424A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2196476A (en) * | 1986-10-14 | 1988-04-27 | Emi Plc Thorn | A method for manufacturing a component and a component produced by the method |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3741880A (en) | 1969-10-25 | 1973-06-26 | Nippon Electric Co | Method of forming electrical connections in a semiconductor integrated circuit |
| JPS5232234B2 (en) * | 1971-10-11 | 1977-08-19 | ||
| US4040891A (en) * | 1976-06-30 | 1977-08-09 | Ibm Corporation | Etching process utilizing the same positive photoresist layer for two etching steps |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL107347C (en) * | 1956-02-28 | |||
| US2890395A (en) * | 1957-10-31 | 1959-06-09 | Jay W Lathrop | Semiconductor construction |
| US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
| FR1318391A (en) * | 1961-04-26 | 1963-02-15 | Clevite Corp | Semiconductor device assembly |
| FR1333007A (en) * | 1962-02-16 | 1963-07-19 | Intermetall | Method of manufacturing high frequency transistors and transistors conforming to those thus obtained |
-
1963
- 1963-08-28 GB GB34056/63A patent/GB1048424A/en not_active Expired
-
1964
- 1964-08-25 DE DEST22582A patent/DE1292759B/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2196476A (en) * | 1986-10-14 | 1988-04-27 | Emi Plc Thorn | A method for manufacturing a component and a component produced by the method |
| GB2196476B (en) * | 1986-10-14 | 1990-02-14 | Emi Plc Thorn | A method for manufacturing a component and a component produced by the method |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1292759B (en) | 1969-04-17 |
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